CN103208503A - Light emitting diode array and manufacturing method thereof - Google Patents
Light emitting diode array and manufacturing method thereof Download PDFInfo
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- CN103208503A CN103208503A CN2012100110163A CN201210011016A CN103208503A CN 103208503 A CN103208503 A CN 103208503A CN 2012100110163 A CN2012100110163 A CN 2012100110163A CN 201210011016 A CN201210011016 A CN 201210011016A CN 103208503 A CN103208503 A CN 103208503A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
A light emitting diode array comprises a first light emitting diode with a first electrode and a second light emitting diode with a second electrode, and the first light emitting diode and the second light emitting diode are separated by a certain distance. A first polymer layer is arranged between the first light emitting diode and the second light emitting diode. At least part of an interconnection wire is arranged on the first polymer layer and connected with the first electrode and the second electrode. The two light emitting diodes are coupled on two opposite sides of the interconnector wire by a permanent substrate. One side of each of the light emitting diodes, which is provided with the interconnector wire, is coated by at least part of a second polymer layer.
Description
Technical field
The present invention relates to a kind of semiconductor luminous assembly, particularly a kind of light-emitting diode array and forming method thereof.
Background technology
Fig. 1 shows the schematic diagram of a kind of existing level formula light-emitting diode (LED).Referring to Fig. 1, horizontal light-emitting diode 100 comprises brilliant base material 102 of heap of stone, epitaxial structure 104, electrode unit 106.Epitaxial structure 104 is to utilize a kind of brilliant program of heap of stone to grow up on brilliant base material 102 of heap of stone.Electrode unit 106 is formed on the epitaxial structure 104 so that its electric energy to be provided.Brilliant base material 102 of heap of stone is that for example gallium nitrate based (GaN-based) or InGaN base semi-conductive materials such as (InGaN-based) are made, for example sapphire or carborundum (SiC) with the III-nitride base of can growing up on its surface.
The processing procedure of horizontal light-emitting diode 100 is simple; Yet it can cause some problems, for example, and current crowding (current crowding), CURRENT DISTRIBUTION inequality, and problem such as heat history.These problems may reduce the luminous efficiency of light-emitting diode 100 and/or damage light-emitting diode 100.
For overcoming the problems referred to above, this area is developed and vertical LED.Fig. 2 is the schematic diagram of traditional vertical LED.Vertical LED 200 has epitaxial structure 204 and electrode unit 206.Electrode unit 206 is positioned on the epitaxial structure 204 so that its electric energy to be provided.Be similar to horizontal light-emitting diode 100 shown in Figure 1, epitaxial structure 204 can utilize brilliant program of heap of stone, makes with gallium nitrate based (GaN-based) or InGaN base semiconductor material such as (InGaN-based).In brilliant process of heap of stone, gallium nitrate based or InGaN sill is grown up from a brilliant base material (not shown) of heap of stone, forms N-type doped layer 208, ray structure 212, with P type doped layer 210.Then, slough brilliant base material of heap of stone, in conjunction with electrode unit 206 and epitaxial structure 204.
In recent years, this area has been developed the light-emitting diode that wide energy gap nitrogen base (wide-bandgap nitride-based), its emission wavelength ranges between ultraviolet light between the visible light of shorter wavelength.Light-emitting diode assembly can be applicable to new demonstration science and technology, for example traffic lights, LCD TV, and the backlight module of mobile phone etc.Because lack natural base material, gallium nitride or relevant nitrilo compound normally are formed on the sapphire substrate.The tradition light-emitting diode, for example aforesaid those, luminous with omnirange because of photon, make its luminous efficiency not high.The light of vast scale is limited by sapphire substrate, can't be utilized.In addition, the coefficient of heat conduction of sapphire substrate is low, makes the radiating efficiency of light-emitting diode not good.For overcoming this problem, need GaN photoconductive structure independent, that do not use sapphire substrate.The epitaxial layer transfer techniques is a kind of known new method, is used for making the light-emitting diode of super brightness.Diaphragm type P type is the GaN light-emitting diode up, utilize laser lift-off (laser lift-off) to replace sapphire substrate with silicon substrate, and handle in conjunction with highly reflective reflector layer and N-type GaN laminar surface roughening, being identified is a kind of resulting structure and method of eliminating the luminous restriction of sapphire.This structure and method become the good selection of the light extraction efficiency that increases the GaN based light-emitting diode.Yet this technology also meets with electrode and covers problem, and the light that sends can be covered or absorb by electrode, causes luminous efficiency to reduce.
Have diaphragm type N-type that fork closes embedded electrode (interdigitated imbedded electrodes) structure up the light-emitting diode electrode that maybe can improve part cover.However, still have and need further improved thin film formula P type light-emitting diode and N-type light-emitting diode structure and processing procedure up up.
In addition, horizontal light-emitting diode 100 normally encapsulates in the mode of monocrystalline (single-die) with vertical LED 200, can't make the large tracts of land light source.
In view of above-mentioned, the light emitting diode construction that need provide new is arranged, with disappearance and the making large tracts of land light source that improves existing light-emitting diode.
Summary of the invention
One embodiment of the invention provides a kind of light-emitting diode array, comprises second light-emitting diode that first light-emitting diode and with first electrode has second electrode,, first light-emitting diode and second light-emitting diode distance of being separated by.One first polymeric layer and can cover at least part of first LED surface and at least part of second LED surface between first light-emitting diode and second light-emitting diode.Its at least part of being positioned on first polymeric layer of one interconnection line, and connect first electrode and second electrode.One permanent base material couples light-emitting diode with respect to a side of interconnection line.One the second polymer layer coats the part that light-emitting diode has a side of interconnection line at least.
Another embodiment of the present invention provides a kind of manufacture method of light-emitting diode array, comprises: form one first light-emitting diode, one second light-emitting diode at one first temporary transient base material.Then, engage the upper surface of one second temporary transient base material and those light-emitting diodes; Remove the first temporary transient base material; One permanent base material is engaged on the surface that removes the first temporary transient base material; Remove the second temporary transient base material.Then, form one first polymeric layer between first light-emitting diode and second light-emitting diode, and can cover at least part of first LED surface and at least part of second LED surface; Form an interconnection line between one second electrode of one first electrode of first light-emitting diode and second light-emitting diode, wherein interconnection line is at least part of is positioned on first polymeric layer.Then, coat light-emitting diode at least part of in the side with interconnection line with a second polymer layer.
Another embodiment of the present invention provides a kind of manufacture method of light-emitting diode array, comprises: form one first light-emitting diode, one second light-emitting diode at one first temporary transient base material.Then, engage the upper surface of one second temporary transient base material and these light-emitting diodes; Remove the first temporary transient base material; Engage a permanent base material on the surface that removes the first temporary transient base material; Remove the second temporary transient base material.Then, make first light-emitting diode and second light-emitting diode distance of being separated by; Form one first polymeric layer between first light-emitting diode and second light-emitting diode, and can cover at least part of first LED surface and at least part of second LED surface; Form an interconnection line between one second electrode of one first electrode of first light-emitting diode and second light-emitting diode, wherein interconnection line is at least part of is positioned on first polymeric layer.Then, coat light-emitting diode at least part of in the side with interconnection line with a second polymer layer.
Description of drawings
Below will describe feature and the advantage of the preferred embodiment of the present invention with graphic and its narration in detail, but embodiment is only as routine formula and unrestricted, wherein:
A kind of existing level formula of Fig. 1 illustration light-emitting diode structure.
The structure of a kind of existing vertical LED of Fig. 2 illustration.
Fig. 3 demonstration is formed on a temporary transient base material according to a kind of existing light-emitting diode array.
Fig. 4 shows that having the light-emitting diode array now according to another kind is formed on a temporary transient base material.
Fig. 5 shows the part sectioned view according to the existing light-emitting diode array of another kind.
Fig. 6 shows according to an embodiment of the invention that light-emitting diode is formed on first base material and polymer covers light-emitting diode and between light-emitting diode.
Fig. 7 shows that the light shield of a patterning is positioned on the polymer except the structure of Fig. 6.
Fig. 8 shows that light-emitting diode is formed on first base material according to an embodiment of the invention, and first polymeric layer is formed between the light-emitting diode, and interconnection line is formed between the light-emitting diode.
Fig. 9 is presented among the embodiment of Fig. 8, and an adhesion layer is in conjunction with light-emitting diode.
Figure 10 shows among the embodiment of Fig. 9 that one second base material is in conjunction with this adhesion layer.
Figure 11 is presented among the embodiment of Figure 10, and first base material is removed.
Figure 12 shows the light-emitting diode array according to the embodiment of the invention, and an external vertical syndeton is arranged at the negative pole of a light-emitting diode, and another external vertical syndeton is arranged at the negative pole of another light-emitting diode.
Figure 13 shows the light-emitting diode array according to the embodiment of the invention, two light-emitting diodes with outside horizontal syndeton.
Figure 14 shows that the light-emitting diode array of Figure 12 is coated by a second polymer layer.
Figure 15 shows that the light-emitting diode array of Figure 13 is coated by a second polymer layer.
Figure 16 shows that according to another embodiment of the present invention a plurality of light-emitting diodes that separate are positioned on one first base material.
The structure that Figure 17 shows Figure 16 with one first adhesion layer in conjunction with one second base material.
Figure 18 shows that in the structure of Figure 17, first base material is removed.
Figure 19 shows in the structure of Figure 18, utilizes one second adhesion layer in conjunction with one the 3rd base material and epitaxial structure.
Figure 20 shows in the structure of Figure 19 that first adhesion layer and second base material are removed.
Figure 21 shows in the structure of Figure 20, fills the gap between the light-emitting diode and forms interconnection line between light-emitting diode with polymeric material.
Figure 22 shows that the structure of Figure 21 is coated by a second polymer layer.
Figure 23 demonstration is formed on one first base material according to a plurality of light-emitting diodes that do not separate of another embodiment of the present invention.
Figure 24 shows in the structure of Figure 23 and engages one second base material with one first adhesion layer.
Figure 25 shows that in the structure of Figure 24, first base material is removed.
Figure 26 shows in the structure of Figure 25 and utilizes one second adhesion layer to engage one the 3rd base material.
Figure 27 shows in the structure of Figure 26 that first adhesion layer and second base material are removed.
Figure 28 shows in the structure of Figure 27, separates to separate forming indivedual light-emitting diodes, with the gap between the polymeric material filling light-emitting diode, and forms interconnection line between light-emitting diode.
Figure 29 shows that the structure of Figure 28 is coated by a second polymer layer.
More than each diagram of the present invention may be not according to scale, and described detail is only as illustration and unrestricted.
The primary clustering symbol description
100 horizontal light-emitting diodes
102 brilliant base materials of heap of stone
104 epitaxial structures
106 electrode units
108N type doped layer
110P type doped layer
112 luminous components
114 first electrodes
116 second electrodes
200 vertical LEDs
202 heat radiating materials
204 epitaxial structures
206 electrode units
208N type doped layer
210P type doped layer
212 ray structures
214 first electrodes
216 second electrodes
300 light-emitting diode arrays
302 temporary transient base materials
304 (A/B/C/D light-emitting diodes
306 gaps
308 (A/B/C/D) positive pole
310 (A/B/C/D) negative pole
312 interconnection lines
314 first base materials
400 light-emitting diode arrays
500 light-emitting diode arrays
502 first polymeric layers
504 light shields
506 openings
508 adhesion layers
510 second base materials
512 reflector
514 insulating barriers
The vertical syndeton of 516 (A/B/C/D)
The horizontal syndeton of 518 (A/B/C/D)
519 (A/D) interconnection line
520 the second polymer layers
The 600P type is the light-emitting diode array up
602 second base materials
604 first adhesion layers
606 the 3rd base materials
608 second adhesion layers
Embodiment
At this specification, " coupling " (coupled) refers to connected directly or indirectlyly, for example indirectly connects one or more intermediate layers or thing between two or more connection targets.
Fig. 3 and Fig. 4 show that a kind of existing light-emitting diode array 300 is formed on the vertical view of a temporary transient base material 302.Referring to Fig. 3, light-emitting diode array 300 has a plurality of hurdles (column) and row (row) arranging light emitting diode 304.At this embodiment, light-emitting diode 304 is one or four to take advantage of four arrays, but is not limited thereto.In icon, the position of numeral [X, Y] expression light-emitting diode in array, wherein X is column number, and Y is columns, and X and Y are integer 0,1,2, or 3.Each light-emitting diode 304 can have the structure of a platform-like.Can utilize laser-induced thermal etching, cut or cut, respond to coupled plasma reactive ion etch methods such as (inductively coupled plasma reactive ion etching), make a plurality of light-emitting diodes 304 separate or separate, and form gap 306.For example, gap 306 is formed on two adjacent light-emitting diode 304[2,3] and 304[3,3] between.Each light-emitting diode 304 has two electrodes usually.For example, light-emitting diode 304[2,3] two electrodes have anodal 308[2,3] with negative pole 310[2,3], and be formed on respectively on P type gallium nitride (P-GaN) layer and n type gallium nitride (N-GaN) layer.At some embodiment, P type gallium nitride (P-GaN) layer is to be positioned on n type gallium nitride (N-GaN) layer, but at some embodiment, n type gallium nitride (N-GaN) layer is to be positioned on the P type gallium nitride (P-GaN).The electric connection of 304 of light-emitting diodes can be serial or parallel connection in the array, perhaps has concurrently.In one embodiment, the negative pole of the positive pole of each light-emitting diode and adjacent light-emitting diode is contiguous in a certain row arranges, so that series connection.In addition, positive pole and the negative pole of each light-emitting diode in first row electrically connects positive pole and the negative pole of each light-emitting diode in the secondary series respectively.Therefore, the light-emitting diode of two adjacent columns can be connected in parallel to each other.By this, the light-emitting diode in the array has the electric connection structure of connecting with in parallel simultaneously.
Referring to Fig. 4, light-emitting diode 304[0, Y] anodal 308[0, Y], electrically connect light-emitting diode 304[1, Y by the interconnection line of a correspondence] (Y=1,2,3) negative pole 310[1, Y], light-emitting diode 304[1, Y] anodal 308[1, Y], interconnection line by a correspondence electrically connects light-emitting diode 304[2, Y] (Y=1,2,3) negative pole 310[2, Y].Light-emitting diode 304[2, Y] anodal 308[2, Y], by the interconnection line 312[2 of a correspondence, Y] (Y=1,2,3) electrically connect light-emitting diode 304[3, Y] and negative pole 310[3, Y].For example, light-emitting diode 304[2,3] anodal 308[2,3], by a series connection interconnection line 312[2,3] electrically connect light-emitting diode 304[3,3] and negative pole 310[3,3].Light-emitting diode 304[0,0:3] Far Left negative pole 310[0,0], 310[0,1], 310[0,2], 310[0,3] electrically connect by an interconnection line 312A in parallel to each other.Light-emitting diode 304[3,0:3] the anodal 308[3 of rightmost, 0], 308[3,1], 308[3,2], 308[3,3] electrically connect by an interconnection line 312B in parallel to each other.Anodal 308[0:3,0:3] and negative pole 310[0:3,0:3] can make by Metal Substrate (metal-based) material.In addition, series connection interconnection line 312, interconnection line 312A in parallel also can make by the Metal Substrate material with interconnection line 312B in parallel.Please note anodal 308[0:3,0:3], negative pole 310[0:3,0:3], series connection interconnection line 312, interconnection line 312A in parallel, with the material of interconnection line 312B in parallel can be identical or different.
Fig. 5 shows the part sectioned view according to a kind of existing light-emitting diode array 400.Be similar to the light-emitting diode array 300 of Fig. 3, Fig. 4, light-emitting diode array 400 has a plurality of light-emitting diodes that are the array shape, does not only draw two among the succinct figure but ask: light-emitting diode 304A and light-emitting diode 304B.Light-emitting diode 304A and light-emitting diode 304B are arranged on first base material 314.In certain embodiments, first base material 314 is temporary transient base materials.Light-emitting diode 304A comprises positive pole 308, and light-emitting diode 304B comprises negative pole 310.Usually, oxide layer 316 is formed on the gap 306 between light-emitting diode 304A and the light-emitting diode 304B, make anodal 308 with negative pole 310 and other adjacent structure insulation.One series connection interconnection line 312 is formed on the oxide layer 316 to electrically connect positive pole 308 and negative pole 310.Yet because the degree of depth in gap 306, oxide layer 316 can't be filled up whole gap 306.In addition, the profile of series connection interconnection line 312 is complicated and have several sharp-pointed angles, and the interconnection line 312 that causes connecting breaks easily, thereby reduces the reliability of light-emitting diode array 400.
Fig. 6 to Figure 15 demonstration is made the N-type method of light-emitting diode array 500 up according to one embodiment of the invention.At some embodiment, manufacture method comprises utilizes a polymeric material partially or completely to fill in the gap 306 on first base material 314, between two adjacent light-emitting diode 304A and the 304B.Light-emitting diode array 500 is by a plurality of high brightness but the light-emitting diode of low current density constitutes; Low current density produces less heat, so structure of arrays can use polymer as the material of filling the gap.
At first, form a light emitting diode construction (not icon) at first base material 314.Then, carry out a separating step, for example cut, saw, etching or laser, make on first base material 314 light emitting diode construction become a plurality of light-emitting diodes 304, as shown in Figure 6.For the sake of clarity, the light-emitting diode array 500 of Fig. 6 and Fig. 7 is only drawn two adjacent light-emitting diode 304A and 304B.First base material 314 can be a temporary transient base material, for example, and a sapphire substrate.Can utilize crystal technique of heap of stone known in the art, for example (Metal Organic Chemical Vapor Deposition MOCVD), forms aforesaid light emitting diode construction on first base material 314 to the Organometallic Chemistry gas deposition.At some embodiment, light emitting diode construction comprises with a plurality of deposition steps and forms a plurality of gallium nitride layers and form a plurality of gallium nitride light-emitting diodes.For example, light emitting diode construction can comprise a N-type layer, a P type layer, and is clipped in the luminescent layer between N-type layer and the P type layer, for example a multiple quantum trap layer.
As shown in Figure 6, after separating light emitting diode construction, form a gap 306 between the first light-emitting diode 304A and the second light-emitting diode 304B.The first light-emitting diode 304A comprises one first electrode (for example, anodal 308) and the second light-emitting diode 304B comprises one second electrode (for example, negative pole 310).In the present embodiment, a deposition of polymer materials also covers the first light-emitting diode 304A and the second light-emitting diode 304B and fill up gap 306, forms one first polymeric layer 502.First polymeric layer 502 can be made by a photoresist, for example polymethylglutarimide (PMGI) or SU-8.In certain embodiments, its scope of the refraction coefficient of first polymeric layer 502 (refractive index) from 1 to 2.6 is between air and semi-conductive refraction coefficient, to increase the light extraction efficiency.The optical clarity of first polymeric layer 502 can be more than 90%, for example more than 99%.Usually, first polymeric layer 30 above anodal 308, its thickness is approximately 2 microns (μ m).At some embodiment, first polymeric layer 502 is pre-mixed fluorescent material (phosphor) before deposition, and the about 30wt% percentage by weight of mixed proportion is to adjust glow color.Yet the deposit thickness of polymer and the particle size of fluorescent material should be coordinated.For example, if the thickness of first polymeric layer 502 on anodal 308 is about 3 μ m, then the particle diameter of fluorescent material approximately is 3 μ m or littler.
Then, referring to Fig. 7, the light shield 504 of patterning is set in first polymeric layer, 502 tops.Light shield 504 can have opening 506 on the ground of corresponding positive pole 308 and negative pole 310, so that remove first polymeric layer 502 of its top.At some embodiment, the step that removes polymer makes the profile of the polymeric layer 502 of winning become level and smooth.At some embodiment, the step that removes polymer will remove the polymer of the first light-emitting diode 304A and second light-emitting diode 304B top, only first polymeric layer 502 in the leaving gap 306.
At some embodiment, removing polymer with after exposing anodal 308 and 310, carry out a surface hydrophilic upgrading program on the surface of polymer, make first polymeric layer, 502 original repellency (hydrophobic) surface modifications become hydrophily (hydrophilic) surface; This step for example can utilize an oxygen plasma (oxygen plasma) to finish.So, can increase the Metal Substrate interconnection line of follow-up formation and the bond strength of first polymeric layer 502.
Then, as shown in Figure 8, form the positive pole 308 and negative pole 310 of series connection interconnection line 312 to connect adjacent light-emitting diode at first polymeric layer 502.At some embodiment, first polymeric layer 502 except filling up gap 306, the also light-emitting diode 304A/B/C/D of cover part.Fig. 8 shows with positive pole 308 and negative pole 310 between three interconnection lines four light-emitting diodes of connection (304A/B/C/D).Because first polymeric layer 502 has more level and smooth surface relatively, the Metal Substrate interconnection line 312 of follow-up formation can have thinner, more level and smooth surface profile.Have complicated profile and acute angle compared to the existing interconnection line of Fig. 5, the more level and smooth surface of the present invention makes device have character and reliability preferably.
As shown in Figure 9, after forming interconnection line 312, can form adhesion layer 508 and cover interconnection line 312 and first polymeric layer 502.Adhesion layer 508 can comprise, but is not limited to, epoxide-resin glue (epoxy glue), cured (wax), spin coating oxide (spin-on-glass; SOG), photoresistance (photoresist), monomer (monomer), polymer (polymer), or other known in the art knowing for engaging GaN layer and silicon (silicon), silica (silicon oxide), metal (metal), ceramic (ceramic), or the colloidal material of polymeric layer.
As shown in figure 10, adhesion layer 508 can be used for engaging light-emitting diode array 500 and second base material 510.Second base material 510 can comprise, but is not limited to, and silicon substrate or other have the base material of the suitable coefficient of heat conduction.Second base material 500 can become the permanent base material of light-emitting diode array 500.At some embodiment, second base material 510 comprises reflector 512 and/or the insulating barrier 514 between adhesion layer 508 and joint base material.Reflector 512 can comprise the distributed Bragg reflector material (distributed Bragg reflector, DBR), comprehensive reflecting material (Omidirectional Reflectors; ODR), silver, aluminium, titanium and/or other reflectivity electric conducting material.Insulating barrier 514 can comprise oxide, nitride, or other has the electrical insulating material of the high grade of transparency.When a permanent base material, second base material 510 for example, when engaging with light-emitting diode array 500, the material of adhesion layer 508 still is monomer or non cross-linked state.Through overcure (cured) program, adhesion layer 508 is transformed into polymer or cross-linked state, to increase mechanical strength and chemical stability.
As shown in figure 11, after engaging second base material 510, remove first base material 314.Removing step for example can utilize the method for laser lift-off (laser lift-off) to finish.After removing first base material 314, expose light-emitting diode array 500 with respect to the surface of interconnection line 312 and first polymeric layer 502.
After exposing the surface of light-emitting diode array 500 with respect to interconnection line 312 and first polymeric layer 502, can form outside electric connection structure at one or more light-emitting diodes 304, comprise horizontal or vertical structure; For example, the light-emitting diode of outermost forms in array, as rightmost light-emitting diode 304D and the Far Left light-emitting diode 304A of Figure 11.Figure 12 shows light-emitting diode array 500 according to an embodiment of the invention, with the negative pole 310A of external vertical syndeton 516A connection light-emitting diode 304A, connects the anodal 308D of light-emitting diode 304D with external vertical syndeton 516D.
Figure 13 shows light-emitting diode array 500 according to another embodiment of the present invention, have outside horizontal syndeton 518A and connect light-emitting diode 304A, and outside horizontal syndeton 518D connects light-emitting diode 304D.In addition, light-emitting diode array 500 also can comprise interconnection line 519A in parallel and be positioned on the light-emitting diode 304A, and interconnection line 519D in parallel is positioned on the light-emitting diode 304D.Interconnection line 519A in parallel and 519D make anodal 308A/D and the negative pole 310A/D short circuit of light-emitting diode 304A and 304D respectively; In addition, the negative pole 310B of the extensible connection light-emitting diode of interconnection line 519A in parallel 304B, the anodal 308C of the extensible connection light-emitting diode of interconnection line 519D in parallel 304C.Interconnection line 519A in parallel can form in same step or different step with the interconnection line 312 of connecting with 519D.
After forming external vertical syndeton 516 and/or outside horizontal syndeton 518, coat the surface that the light-emitting diode array is exposed with a second polymer layer, for example, have the surface of outer portion connecting structure.Figure 14 shows light-emitting diode array 500 according to an embodiment of the invention, and its surface with external vertical syndeton 516A/D (embodiment as described in Figure 12) is coated by a second polymer layer 520.Figure 15 shows light-emitting diode array 500 according to another embodiment of the present invention, and its surface with outside horizontal syndeton 518A/D (embodiment as described in Figure 13) is coated by a second polymer layer 520.
At some embodiment, the surface that light-emitting diode array 500 exposes is roughly coated by the second polymer layer 520 fully.At some embodiment, the second polymer layer 520 coats the surface that light-emitting diode array 500 exposes, but expose at least part of outer portion connecting structure, for example vertical syndeton 516 or horizontal syndeton 518, so light-emitting diode array 500 can be carried out subsequent external and electrically connected.
At some embodiment, the second polymer layer 520 can comprise, but is not limited to, and transparent silica gel (silicone) or silica gel mix with fluorescent material.At some embodiment, the second polymer layer 520 can comprise and first polymeric layer, 502 identical materials.For example, the second polymer layer 520 can be by a photoresist, and for example polymethylglutarimide (PMGI) or SU-8 make.The second polymer layer 520 coats light-emitting diode array 500 isolates itself and context, so can protect light-emitting diode array 500 to avoid suffering damage and environmental impact.At present embodiment, the second polymer layer 520 is one to have the enclosing cover of curved surface, semicircular transparent outer cover for example, and it has the optical index greater than air, so can increase the light extraction efficiency.
Figure 16 to Figure 22 demonstration is made the P type method of light-emitting diode array 600 up according to another embodiment of the present invention, and its feature is separated before comprising epitaxial layer transfer, transfer substrate/the isolation light-emitting diode, and utilizes polymeric material to coat light-emitting diode etc.Figure 16 shows that a plurality of light-emitting diode 304A, 304B, 304C are formed on first base material 314.First base material 314 can comprise, but is not limited to sapphire substrate.
At first, on first base material 314, deposit epitaxial layer everywhere, follow separation or isolate the epitaxial layer that deposits, to form light-emitting diode 304A, 304B, the 304C of a plurality of separation.Can utilize cutting, the methods such as saw or laser of cutting are finished separation.At some embodiment, utilize engraving method to finish separation.
Aforementioned epitaxial layer can utilize crystal technique of heap of stone known in the art, and for example (Metal Organic Chemical Vapor Deposition MOCVD) makes formation to the Organometallic Chemistry gas deposition.At present embodiment, epitaxial layer is to form a plurality of gallium nitride layers with a plurality of deposition steps, to form gallium nitride light-emitting diode.For example, epitaxial layer can comprise a N-type layer, a P type layer, and is clipped in the luminescent layer between N-type layer and the P type layer, for example a multiple quantum trap layer.
As shown in figure 16, after separating light emitting diode construction, gap 306 is between light-emitting diode 304A, 304B, 304C.As shown in figure 17, then, engage the upper surface of second base material 602 and light-emitting diode 304A/B/C with first adhesion layer 604.At some embodiment, second base material 602 is glass baseplates, and first adhesion layer 604 is epoxide-resin glues.As shown in figure 17, part first adhesion layer 604 can flow into the gap of filling up between light-emitting diode 304A, 304B, the 304C 306.
As shown in figure 18, after engaging second base material 602, remove first base material 314.The method that removes first base material 314 can comprise, but is not limited to, laser lift-off (LLO).At some embodiment, can utilize a processing procedure, wet etching (wet etching) for example, the surface roughening that light-emitting diode 304A, 304B, 304C are exposed.As shown in figure 19, remove first base material 314 after, can engage the 3rd base material 606 and light-emitting diode 304A, 304B, 304C by second adhesion layer 608.Second adhesion layer 608 can comprise, but is not limited to, epoxide-resin glue, cured, spin coating oxide, photoresistance, monomer, polymer, or other known in the art knowing for engaging GaN layer and silicon, silica, metal, pottery, or the colloidal material of polymeric layer.The 3rd base material 606 can comprise, but is not limited to, and silicon substrate or other have the base material of the suitable coefficient of heat conduction.When a permanent base material, the 3rd base material 510 for example, when engaging with light-emitting diode array 600, the material of second adhesion layer 608 still is monomer or non cross-linked state.Through overcure (cured) program, second adhesion layer 608 is transformed into polymer or cross-linked state, to increase mechanical strength and chemical stability.
As shown in figure 20, after engaging the 3rd base material 606, remove second base material 602 and first adhesion layer 604.Remove first adhesion layer 604 can cause gap 306 become empty, do not fill up.As shown in figure 21, at present embodiment, a polymeric material is received in the gap 306 between light-emitting diode 304A, 304B, the 304C, forms first polymeric layer 502.First polymeric layer 502 can be by a photoresist, and for example polymethylglutarimide (PMGI) or SU-8 make.As shown in figure 21, the formation method of first polymeric layer 502 can comprise elder generation's deposition one polymeric material and fill up gap 306 and cover light-emitting diode 304A, 304B, 304C, follows this polymeric material of patterning, to form first polymeric layer 502 of patterning.The method of patterning for example can be utilized light shield and etching program.At present embodiment, first polymeric layer 502 is except filling up gap 306, also cover part light-emitting diode 304A/B/C.At other embodiment, first polymeric layer 502 only fills up gap 306, does not cover light-emitting diode 304A/B/C.
After forming first polymeric layer 502, then, as shown in figure 21, form positive pole and the negative pole of series connection interconnection line 312 to connect adjacent light-emitting diode at first polymeric layer 502.Because first polymeric layer 502 has more level and smooth surface relatively, the Metal Substrate interconnection line 312 of follow-up formation can have thinner, more level and smooth surface profile.Have complicated profile and acute angle compared to the existing interconnection line of Fig. 5, the more level and smooth interconnection line surface of the present invention makes device have character and reliability preferably.
As shown in figure 22, after first polymeric layer 502 forms interconnection line 312, coat interconnection line 312 and first polymeric layer 502 with the second polymer layer 520.At some embodiment, the second polymer layer 520 can comprise, but is not limited to, and transparent silica gel (silicone) or silica gel mix with fluorescent material.At some embodiment, the second polymer layer 520 can comprise and first polymeric layer, 502 identical materials.For example, the second polymer layer 520 can be by a photoresist, and for example polymethylglutarimide (PMGI) or SU-8 make.
At some embodiment, one or more light-emitting diodes, for example, light-emitting diode 304A and the 304C of outermost in the array, its at least part of zone is not coated by the second polymer layer 520, and by the said external syndeton, for example vertical syndeton and horizontal syndeton make some light-emitting diode (for example 304A and 304C) be connected with outside.At some embodiment, form outer portion connecting structure earlier, form the second polymer layer 520 again.
Figure 23 to Figure 29 demonstration is made the P type method of light-emitting diode array 600 up according to another embodiment of the present invention, and its feature is separated after comprising epitaxial layer transfer, transfer substrate/the isolation light-emitting diode, and utilizes polymeric material to coat light-emitting diode etc.Figure 23 shows that a plurality of light-emitting diode 304A, 304B, 304C are formed on first base material 314.First base material 314 can be including but not limited to sapphire substrate.
At first, on first base material 314, deposit epitaxial layer everywhere, form light-emitting diode 304A, 304B, 304C.Epitaxial layer can utilize crystal technique of heap of stone known in the art, and for example (Metal Organic Chemical Vapor Deposition MOCVD) makes formation to the Organometallic Chemistry gas deposition.At present embodiment, epitaxial layer is to form a plurality of gallium nitride layers with a plurality of deposition steps, to form gallium nitride light-emitting diode.For example, epitaxial layer can comprise a N-type layer, a P type layer, and is clipped in the luminescent layer between N-type layer and the P type layer, for example a multiple quantum trap layer.
As shown in figure 23, the not separated or isolation of light-emitting diode 304A, 304B, 304C.Dotted line among Figure 23 to 27 represents light-emitting diode 304A, 304B, 304C with separated zone.
As shown in figure 24, then, engage the upper surface of second base material 602 and light-emitting diode 304A/B/C with first adhesion layer 604.At some embodiment, second base material 602 is glass baseplates, and first adhesion layer 604 is epoxide-resin glues.Because light-emitting diode 304A/B/C is not separated as yet, does not have the gap between light-emitting diode 304A, 304B, the 304C, therefore first adhesion layer 604 does not flow into non-existent gap.
As shown in figure 25, after engaging second base material 602, remove first base material 314.The method that removes first base material 314 can be including but not limited to laser lift-off (LLO).At some embodiment, can utilize a processing procedure, wet etching (wet etching) for example, the surface roughening that light-emitting diode 304A, 304B, 304C are exposed.
As shown in figure 26, after removing first base material 314, can engage the 3rd base material 606 and light-emitting diode 304A, 304B, 304C by second adhesion layer 608.Second adhesion layer 608 can comprise, but is not limited to, epoxide-resin glue, cured, spin coating oxide, photoresistance, monomer, polymer, or other known in the art knowing for engaging GaN layer and silicon, silica, metal, pottery, or the colloidal material of polymeric layer.The 3rd base material 606 can comprise a reflector (not shown) and/or an insulating barrier (not shown) between the 3rd base material 606 and second adhesion layer.The 3rd base material 606 can comprise, but is not limited to, and silicon substrate or other have the base material of the suitable coefficient of heat conduction.The 3rd base material 606 can become the permanent base material of light-emitting diode 304A, 304B, 304C etc.When a permanent base material, the 3rd base material 510 for example, when engaging with light-emitting diode array 600, the material of second adhesion layer 608 still is monomer or non cross-linked state.Through overcure (cured) program, second adhesion layer 608 is transformed into polymer or cross-linked state, to increase mechanical strength and chemical stability.
As shown in figure 27, after engaging the 3rd base material 606, remove second base material 602 and first adhesion layer 604.This removes step for example can utilize laser lift-off or acid etching.
As Figure 28, after removing first adhesion layer 604 and second base material 602, epitaxial layer is separated by the dotted line along Figure 27, to form light-emitting diode 304A, 304B, 304C.This separating step for example can utilize cutting, saw or laser.At some embodiment, utilize an etching program to separate and form indivedual light-emitting diodes.
As Figure 28, after separating the indivedual light-emitting diode 304A of formation, 304B, 304C, a polymeric material is received in gap 306 and the part light-emitting diode 304A/B/C top between light-emitting diode 304A, 304B, the 304C, forms first polymeric layer 502.First polymeric layer 502 can be by a photoresist, and for example polymethylglutarimide (PMGI) or SU-8 make.As shown in figure 28, the formation method of first polymeric layer 502 can comprise: deposition one polymeric material fills up gap 306 and covers light-emitting diode 304A, 304B, 304C earlier, follow this polymeric material of patterning, to form first polymeric layer 502 of patterning.The method of patterning for example can be utilized light shield and etching program.At present embodiment, first polymeric layer 502 is except filling up gap 306, also cover part light-emitting diode 304A/B/C.At other embodiment, first polymeric layer 502 only fills up gap 306, does not cover light-emitting diode 304A/B/C.
Then, as shown in figure 28, after forming first polymeric layer 502, form positive pole and the negative pole of series connection interconnection line 312 to connect adjacent light-emitting diode at first polymeric layer 502.As shown in figure 29, after first polymeric layer 502 forms interconnection line 312, coat interconnection line 312 and first polymeric layer 502 with the second polymer layer 520.At some embodiment, the second polymer layer 520 can comprise, but is not limited to, and transparent silica gel (silicone) or silica gel mix with fluorescent material.At some embodiment, the second polymer layer 520 can comprise and first polymeric layer, 502 identical materials.For example, the second polymer layer 520 can be by a photoresist, and for example polymethylglutarimide (PMGI) or SU-8 make.
At some embodiment, one or more light-emitting diodes, for example, at least part of zone of the light-emitting diode 304A of outermost and 304C in the array, do not coated by the second polymer layer 520, and by the said external syndeton, for example vertical syndeton and horizontal syndeton make some light-emitting diode (for example 304A and 304C) be connected with outside.At some embodiment, form outer portion connecting structure earlier, form the second polymer layer 520 again.The second polymer layer 520 coats light-emitting diode array 600 isolates itself and context, so can protect light-emitting diode array 600 to avoid suffering damage and environmental impact.At present embodiment, the second polymer layer 520 is one to have the enclosing cover of curved surface, semicircular transparent outer cover for example, and it has the optical index greater than air, so can increase the light extraction efficiency.
The present invention is not confined to described embodiment, should comprise its possible variation.The employed term of this specification is only required for describing embodiment, should be as restriction.Unless stated otherwise, numeral-classifier compound " " also may refer to plural number with " being somebody's turn to do ", " described ".For example, " device " comprises the combination of device more than two, and " material " comprises a composite material.
According to this specification, those skilled in the art can make various modifications, change or replacement according to this.Therefore, this specification only is for teaching those skilled in the art, and how illustration puts into practice the present invention, and described embodiment only is preferred embodiment.After those skilled in the art read this case specification, know which assembly and the material among this case embodiment can be done replacement, which assembly or process sequence are variable, and which feature can be used separately.All other do not break away from following the equivalence of finishing change of spirit or the modification that invention discloses, and all should be included in the claim institute restricted portion.
Claims (15)
1. light-emitting diode array comprises:
One has first light-emitting diode of one first electrode;
One has second light-emitting diode of one second electrode, and wherein said first light-emitting diode and described second light-emitting diode be a distance at interval;
One first polymeric layer is between described first light-emitting diode and described second light-emitting diode;
One interconnection line, this interconnection line is at least part of to be positioned on described first polymeric layer, and connects described first electrode and described second electrode;
One permanent base material couples described light-emitting diode with respect to a side of described interconnection line; And
One the second polymer layer coats the part that light-emitting diode has a side of interconnection line at least.
2. light-emitting diode array as claimed in claim 1 also comprises a terpolymer layer that engages described permanent base material and described light-emitting diode, and described first light-emitting diode and described second light-emitting diode are aggregated thing and center on by this.
3. light-emitting diode array as claimed in claim 1 also comprises an outer portion connecting structure that couples one of them described light-emitting diode, wherein should at least part of of outer portion connecting structure not coated by described the second polymer layer.
4. light-emitting diode array as claimed in claim 1, wherein said interconnection line is coated by described the second polymer layer.
5. light-emitting diode array as claimed in claim 1, wherein said permanent base material comprise following group wherein one or its combination in any: a reflector and an insulating barrier.
6. light-emitting diode array as claimed in claim 1, wherein said first polymeric layer comprises photoresistance, and described the second polymer layer comprises silica gel.
7. light-emitting diode array as claimed in claim 1, wherein said light-emitting diode array is N-type light-emitting diode array up.
8. the manufacture method of a light-emitting diode array comprises:
Form one first light-emitting diode and one second light-emitting diode on one first temporary transient base material;
Engage the upper surface of one second temporary transient base material and described light-emitting diode;
Remove the described first temporary transient base material;
Engage a permanent base material on the surface that removes the described first temporary transient base material;
Remove the second temporary transient base material;
Between described first light-emitting diode and described second light-emitting diode, form one first polymeric layer;
Form an interconnection line between one second electrode of one first electrode of described first light-emitting diode and described second light-emitting diode, wherein said interconnection line is at least part of to be positioned on described first polymeric layer; And
Coat described light-emitting diode at least part of in the side with described interconnection line with a second polymer layer.
9. manufacture method as claimed in claim 8 also comprises with an adhesion layer, and this adhesion layer engages described light-emitting diode and described permanent base material.
10. manufacture method as claimed in claim 8, wherein said first light-emitting diode and described second light-emitting diode are to separate by a gap, and the formation method of described first polymeric layer comprises: at first deposit a polymeric material and fill up described gap and cover described light-emitting diode, follow the described polymeric material of patterning, to form described first polymeric layer of patterning.
11. manufacture method as claimed in claim 8, the wherein said first temporary transient base material is with an adhesion layer and described light-emitting diode temporary joint, and when removing the described first temporary transient base material, also removes described adhesion layer simultaneously.
12. the manufacture method of a light-emitting diode array comprises:
Form one first light-emitting diode and one second light-emitting diode on one first temporary transient base material;
Engage the upper surface of one second temporary transient base material and described light-emitting diode;
Remove the described first temporary transient base material;
Engage a permanent base material on the surface that removes the described first temporary transient base material;
Remove the second temporary transient base material;
Make described first light-emitting diode and described second light-emitting diode distance of being separated by;
Between described first light-emitting diode and described second light-emitting diode, form one first polymeric layer;
Form an interconnection line between one second electrode of one first electrode of described first light-emitting diode and described second light-emitting diode, wherein this interconnection line is at least part of is positioned on described first polymeric layer; And
Coat described light-emitting diode at least part of in the side with described interconnection line with a second polymer layer.
13. as the manufacture method of claim 12, also comprise with an adhesion layer, this adhesion layer engages described light-emitting diode and described permanent base material.
14. the manufacture method as claim 12, wherein said first light-emitting diode and described second light-emitting diode are to separate by a gap, and the formation method of described first polymeric layer comprises: at first deposit a polymeric material and fill up described gap and cover described light-emitting diode, follow the described polymeric material of patterning, to form described first polymeric layer of patterning.
15. as the manufacture method of claim 12, the wherein said first temporary transient base material is with an adhesion layer and described light-emitting diode temporary joint, and when removing the described first temporary transient base material, also removes described adhesion layer simultaneously.
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