CN103208444A - Monitoring method for preventing wafer crack - Google Patents
Monitoring method for preventing wafer crack Download PDFInfo
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- CN103208444A CN103208444A CN2013100845338A CN201310084533A CN103208444A CN 103208444 A CN103208444 A CN 103208444A CN 2013100845338 A CN2013100845338 A CN 2013100845338A CN 201310084533 A CN201310084533 A CN 201310084533A CN 103208444 A CN103208444 A CN 103208444A
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Abstract
The invention provides a monitoring method for preventing wafer crack. The monitoring method comprises the steps of obtaining standard defect signal features, obtaining edge defect signal features of a wafer to be detected, and comparing the edge defect signal features of the wafer to be detected with the standard defect signal features, wherein the wafer to be detected has gaps and defects and the crack risk exists if the edge defect signal features of the wafer to be detected are matched with the standard defect signal features. By means of the monitoring method for preventing the wafer crack, the wafer is monitored, the wafer with crack risk is found in advance and processed, and the problems including particle defects and reduced product defect-free rate and the like caused by the wafer crack are solved.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the method for supervising that the prevention wafer breaks.
Background technology
Along with improving constantly of integrated circuit technique technology, the fertile chip-count of institute is also more and more on the unit are, and wafer size is increasing.Because wafer size is excessive, in the semiconductor fabrication process process, can wafer form should be uneven and stress, add the influence with the crystal round fringes breach, cause wafer to break easily.In when, wafer taking place breaking when, can directly have influence on production production capacity that the equipment that wafer breaks takes place and follow-up production product, cause grain defect, thereby have influence on the product yield.What at present those skilled in the art generally taked is after wafer breaks, and handles the wafer splintering problem to the method that semiconductor equipment that wafer breaks deals with problems arising from an accident cleaning and trace the reason of breaking takes place.Existing processing method is not only passive but also very easily cause the yield of other normal product to reduce.Therefore, need the method for supervising to prevent wafer to break, wafer is monitored, find and handle the wafer that has risk of rupture in advance, reduce the wafer problems such as causing grain defect and the reduction of product yield of breaking.
Summary of the invention
The problem that the present invention solves provides a kind of method for supervising that can prevent wafer to break, and wafer is monitored, and finds and handle the wafer that has risk of rupture in advance, reduces the wafer problems such as causing grain defect and the reduction of product yield of breaking.
For addressing the above problem, the invention provides a kind of method for supervising that prevents wafer to break, comprising:
Obtain the drawbacks of the standard signal characteristic;
Obtain the edge defect signal characteristic of wafer to be detected;
Margin signal feature and the described drawbacks of the standard signal characteristic of described wafer to be detected are compared, if the margin signal feature of described wafer to be detected and described drawbacks of the standard signal characteristic coupling, then the described wafer to be detected of described judgement is the wafer with breach defective, has risk of rupture.
Alternatively, the acquisition methods of described drawbacks of the standard signal characteristic comprises:
Provide known edge to have the wafer of breach defective;
The edge that described known edge is had the wafer of breach defective scans, and obtains the drawbacks of the standard signal characteristic.
Alternatively, described scanning utilizes the crystal round fringes scanning device to carry out.
Alternatively, described drawbacks of the standard signal characteristic is arranged in the crystal round fringes scanning device, and the edge defect signal characteristic of described acquisition wafer to be detected obtains for utilizing the crystal round fringes scanning device.
Compared with prior art, the present invention has the following advantages:
Method for supervising provided by the invention can be monitored wafer, finds and handle the wafer that has risk of rupture in advance, reduces the wafer problems such as causing grain defect and the reduction of product yield of breaking.
Description of drawings
Fig. 1 is the schematic flow sheet of the method for supervising that breaks of the prevention wafer of one embodiment of the invention.
Embodiment
Along with wafer size constantly increases, in utilizing the process of semiconductor fabrication process, can produce unbalanced stress at wafer, if there is the breach defective in crystal round fringes, above-mentioned breach defective may cause the wafer limit to be broken, if can be in advance to the edge of wafer detecting, whether the edge of judging wafer exists the breach defective, just can prevent that the wafer with breach defective from entering semiconductor equipment, prevents the wafer problems such as the grain defect that causes, the reduction of product yield of breaking.
For addressing the above problem, the invention provides a kind of method for supervising that prevents wafer to break, please refer to the schematic flow sheet of the method for supervising that the prevention wafer of one embodiment of the invention shown in Figure 1 breaks.Described method comprises:
Step S1 obtains the drawbacks of the standard signal characteristic;
Step S2 obtains the edge defect signal characteristic of wafer to be detected;
Step S3, margin signal feature and the described drawbacks of the standard signal characteristic of described wafer to be detected are compared, if the margin signal feature of described wafer to be detected and described drawbacks of the standard signal characteristic coupling, then the described wafer to be detected of described judgement is the wafer with breach defective, has risk of rupture.
Below in conjunction with specific embodiment technical scheme of the present invention is described in detail.
At first, as an embodiment, the acquisition methods of described drawbacks of the standard signal characteristic comprises:
Provide known edge to have the wafer of breach defective;
The edge that described known edge is had the wafer of breach defective scans, and obtains the drawbacks of the standard signal characteristic.
The described edge that described known edge is had the wafer of breach defective scans to utilizing the crystal round fringes scanning device to carry out, and the drawbacks of the standard signal characteristic of acquisition can be stored in the described crystal round fringes scanning device.
After having obtained the drawbacks of the standard signal characteristic, utilize wafer-scanning equipment to obtain the edge defect signal characteristic of wafer to be detected, margin signal feature and the described drawbacks of the standard signal characteristic of described wafer to be detected are compared, if the margin signal feature of described wafer to be detected and described drawbacks of the standard signal characteristic coupling, then the described wafer to be detected of described judgement is the wafer with breach defective, there is risk of rupture, can not proceed semiconductor manufacture flow path, with the problem that prevents wafer from breaking the grain defect that causes and product yield reduce; Otherwise, compare with described drawbacks of the standard signal characteristic as if the margin signal feature of described wafer to be detected, both differences, then there is not risk of rupture in described wafer non-notch defective to be detected, can proceed semiconductor manufacturing process.
To sum up, method for supervising provided by the invention can be monitored wafer, finds and handle the wafer that has risk of rupture in advance, reduces the wafer problems such as causing grain defect and the reduction of product yield of breaking.
Therefore, above-mentioned preferred embodiment only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit essence is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (4)
1. a method for supervising that prevents wafer to break is characterized in that, comprising:
Obtain the drawbacks of the standard signal characteristic;
Obtain the edge defect signal characteristic of wafer to be detected;
Margin signal feature and the described drawbacks of the standard signal characteristic of described wafer to be detected are compared, if the margin signal feature of described wafer to be detected and described drawbacks of the standard signal characteristic coupling, then the described wafer to be detected of described judgement is the wafer with breach defective, has risk of rupture.
2. the method for supervising that breaks of prevention wafer as claimed in claim 1 is characterized in that, described standard lacks
The acquisition methods that falls into signal characteristic comprises:
Provide known edge to have the wafer of breach defective;
The edge that described known edge is had the wafer of breach defective scans, and obtains the drawbacks of the standard signal characteristic.
3. the method for supervising that breaks of prevention wafer as claimed in claim 2 is characterized in that described scanning utilizes the crystal round fringes scanning device to carry out.
4. the method for supervising that breaks of prevention wafer as claimed in claim 1, it is characterized in that, described drawbacks of the standard signal characteristic is arranged in the crystal round fringes scanning device, and the edge defect signal characteristic of described acquisition wafer to be detected obtains for utilizing the crystal round fringes scanning device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310084533.8A CN103208444B (en) | 2013-03-15 | The monitoring method that prevention wafer ruptures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310084533.8A CN103208444B (en) | 2013-03-15 | The monitoring method that prevention wafer ruptures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103208444A true CN103208444A (en) | 2013-07-17 |
| CN103208444B CN103208444B (en) | 2016-11-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114724981A (en) * | 2022-03-10 | 2022-07-08 | 江苏亚电科技有限公司 | Wafer counting device and wafer counting method |
| CN115579312A (en) * | 2022-12-09 | 2023-01-06 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001124538A (en) * | 1999-10-27 | 2001-05-11 | Komatsu Electronic Metals Co Ltd | Method and device for detecting defect in surface of object |
| US20050024632A1 (en) * | 2003-07-18 | 2005-02-03 | Plemmons Mark P. | Detection of a wafer edge using collimated light |
| CN1677637A (en) * | 2004-03-29 | 2005-10-05 | 力晶半导体股份有限公司 | Method for detecting again fault |
| US20060274933A1 (en) * | 1999-11-29 | 2006-12-07 | Hitachi, Ltd. | Defect image classifying method and apparatus and a semiconductor device manufacturing process based on the method and apparatus |
| CN102037348A (en) * | 2008-05-22 | 2011-04-27 | 独立行政法人产业技术综合研究所 | Method for inspecting defects, and defect inspecting apparatus |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001124538A (en) * | 1999-10-27 | 2001-05-11 | Komatsu Electronic Metals Co Ltd | Method and device for detecting defect in surface of object |
| US20060274933A1 (en) * | 1999-11-29 | 2006-12-07 | Hitachi, Ltd. | Defect image classifying method and apparatus and a semiconductor device manufacturing process based on the method and apparatus |
| US20050024632A1 (en) * | 2003-07-18 | 2005-02-03 | Plemmons Mark P. | Detection of a wafer edge using collimated light |
| CN1677637A (en) * | 2004-03-29 | 2005-10-05 | 力晶半导体股份有限公司 | Method for detecting again fault |
| CN102037348A (en) * | 2008-05-22 | 2011-04-27 | 独立行政法人产业技术综合研究所 | Method for inspecting defects, and defect inspecting apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114724981A (en) * | 2022-03-10 | 2022-07-08 | 江苏亚电科技有限公司 | Wafer counting device and wafer counting method |
| CN114724981B (en) * | 2022-03-10 | 2023-02-28 | 江苏亚电科技有限公司 | Wafer counting device and wafer counting method |
| CN115579312A (en) * | 2022-12-09 | 2023-01-06 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
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