CN103205713A - Three-dimensional vapor plating mask plate - Google Patents
Three-dimensional vapor plating mask plate Download PDFInfo
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- CN103205713A CN103205713A CN2012100107141A CN201210010714A CN103205713A CN 103205713 A CN103205713 A CN 103205713A CN 2012100107141 A CN2012100107141 A CN 2012100107141A CN 201210010714 A CN201210010714 A CN 201210010714A CN 103205713 A CN103205713 A CN 103205713A
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- mask plate
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- deposition mask
- elevated regions
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Abstract
The invention relates to a three-dimensional vapor plating mask plate. The three-dimensional vapor plating mask plate comprises a pattern opening area which is characterized by having a three-dimensional structure, wherein the three-dimensional structure is composed of a concave area and a convex area, the concave area is a concave structure lower than the plate surface of the mask plate, and the convex area is a convex structure higher than the plate surface of the mask plate. The three-dimensional vapor plating mask plate provided by the invention has the concave area and the convex area, and is made of a material including iron and nickel elements; the plate surface has good glossiness; a plated layer has good surface quality, no pits or pinholes; the convex area is not easy to shed; the cost is low; the process is simple; the energy is saved; the opening precision is high; the opening quality is good; the hole walls are smooth; and the mask plate has wide market prospects.
Description
Technical field
The present invention relates to a kind of deposition mask plate, belong to OLED and make the field.
Background technology
OLED, namely Organic Light Emitting Diode claims organic electric laser to show again.The OLED technique of display is different with traditional LED display mode, need not backlight, adopts extremely thin coating of organic material and glass-base, and when electric current passed through, these organic materialss will be luminous.And the OLED display screen can do lighter and thinnerly, and visible angle is bigger, and can significantly save electric energy.The premium properties of OLED makes its accessory-mask plate obtain unprecedented development space.Usually, when making active display, mask is used to deposit the layer with predetermined pattern, namely when the layer of deposition such as organic layer, utilizes the mask in the hole with special pattern, form in substrate figure with corresponding and hole layer.At present commonplace is the planar metal mask plate, but along with the making rapid progress of science and technology, the functional requirement of electronic devices and components is becomed privileged direction and developed also towards diversification, and corresponding transfer can not be satisfied this requirement with plane deposition mask plate.
In the metal mask board manufacturing process in the past and since when exposure mask precision and etched precision very big to the metal mask amount pattern precision influence as end article, so in each operation the dimensional precision of managing graphic accurately.In the manufacturing in the past, because the metal at the big chromium of linear expansivity, stainless steel etc. forms metal mask plate, so result from the dimensional precision difference that small temperature difference on the metallic substance makes each metal mask that makes, have the problem of the metal mask that is difficult to obtain the same size precision.From material, the general metal mask plate that forms at the big metal of linear expansivity results from the dimensional precision difference that small temperature difference on the metallic substance makes each metal mask that makes, and has the problem of the metal mask that is difficult to obtain the same size precision.Rhometal has been then because added ferro element, thereby improved hardness and the magnetic of mask plate, and in this scope, iron level is more high, and the thermal expansivity of mask plate is more low, and when being applied to the evaporation process process, the evaporation position progress of organic materials is more high.Invar alloy contains the nickel of 32%-36% usually, and Invar alloy also is invar, and its average coefficient of expansion is generally 1.5 * 10-6 ℃.Nickeliferously reached 1.8 * 10-8 ℃ at 36% o'clock, and all do not change during ℃ to 100 ℃ in room temperature-80.Nickel content increase and decrease within the specific limits can cause the rapid variation of iron, the nickeline wire coefficient of expansion.Therefore for the very high evaporation mask plate of accuracy requirement, Invar alloy is first-selected material.Other materials all can be because of being heated and the expansion effects precision in evaporate process, thereby influenced quality product greatly.
But Invar alloy all is to adopt the method for melting to obtain simultaneously, and power consumption is high, the technical requirements height, thereby price also is quite high.Seriously limited the development prospect of Invar alloy.
Therefore, the plane deposition mask plate of prior art reaches the material that is used for the deposition mask plate, has seriously hindered the development of active display.The active display of producing with the plane deposition mask plate of prior art does not satisfy market to its high request.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of 3 D stereo deposition mask plate, has sunk area and elevated regions, comprises two kinds of elements of iron and nickel, this mask plate precision height, homogeneity height, plate face quality and opening quality are good, and thermal linear expansion coefficient is minimum, satisfy the evaporation requirement well.
In order to solve the problems of the technologies described above, the technical scheme that the present invention takes is as follows:
A kind of 3 D stereo deposition mask plate, comprise the figure open area, it is characterized in that, has 3-D solid structure, described 3-D solid structure is made of sunk area and elevated regions, described sunk area is than the low sunk structure of mask plate plate face, and described elevated regions is than the high bulge-structure of mask plate plate face.
Described sunk area is in the one side of mask plate, and described elevated regions is at the another side of mask plate, and described depressed area is less than described elevated regions.
The material of described mask plate comprises iron and two kinds of elements of nickel.
Preferably, the content of described ferro element is 40%～55%, and the content of described nickel element is 45%～60%.
Preferred, described iron level is 40%, and the content of nickel is 60%.
Preferred, described iron level is 50%, and the content of nickel is 50%.
Preferred, described iron level is 55%, and the content of nickel is 45%.
Preferably, the degree of depth of described sunk area≤50 μ m, the height of elevated regions≤50 μ m.
Preferred, the degree of depth of described sunk area≤1 μ m, the height of elevated regions≤1 μ m.
The scope that described sunk area and mask plate plate face form angle is 80
0～90
0, the scope that described elevated regions and mask plate plate face form angle is 80
0～90
0
Preferably, the thickness of described mask plate is 20～100 μ m, and the homogeneity COV of described ferro-nickel alloy plating is less than 5%; Described ferro-nickel alloy plating surface brightness is the one-level light.
Preferably, described mask plate is applied to the OLED manufacture craft, it is the template that the evaporation organic materials will be used on ito substrate, this processing requirement mask plate has certain magnetic and hardness, and in order to prevent the rising along with the deposited chamber temperature, mask plate produces position deviation, so this kind mask plate should have alap thermal expansivity.The more traditional electroforming pure nickel of this kind mask plate mask plate has added ferro element, thereby has improved hardness and the magnetic of mask plate, and in this scope, iron level is more high, and the thermal expansivity of mask plate is more low, when being applied to the evaporation process process, the evaporation position progress of organic materials is more high; In order to cooperate the accuracy requirement of specific position, its position need be made as convex area or depressed area, and strict to the depth-to-width ratio of convex area or depressed area, also comprises the angle of convex area or depressed area and plate face.
3-D solid structure is arranged on the mask plate according to the needs of packaging area, and the packaging area that for example has is arranged on the region intermediate of ito substrate, accordingly 3-D solid structure is arranged at the centre of mask plate; And the packaging area that has is arranged on the fringe region of ito substrate, accordingly 3-D solid structure is arranged at the edge of mask plate.Needs according to packaging area can arrange a plurality of 3-D solid structures at mask plate, and 3-D solid structure can be arranged at any zone on the mask plate.
The 3-D solid structure of mask plate mainly plays encapsulation effect, namely on the ito substrate the organic materials of evaporation be packaged together, avoid the organic material layer of former evaporation, and the opening coating frame sealing glue around the mask plate 3-D solid structure.3-D solid structure on the mask plate is in order to avoid the organic materials of evaporation, and 3-D solid structure contacts the one side of being close to ito substrate be sunk area, and the space of avoiding is provided.
In use, earlier with two-dimentional evaporation with mask plate with organic materials in layer evaporation to ito glass substrate, be encapsulated with the 3 D stereo deposition mask plate general organic material layer that evaporation is good provided by the invention again.
3 D stereo deposition mask plate provided by the invention, have sunk area and elevated regions, comprise two kinds of elements of iron and nickel, plate face luminance brightness is good, coating surface quality is good, no pit, pin hole, elevated regions difficult drop-off cost is low, and technology is simple, save energy opening precision height, the opening quality is good, and hole wall is smooth, has vast market prospect.
Description of drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
Fig. 1 is 3 D stereo deposition mask plate vertical view;
Fig. 2 is 3 D stereo deposition mask plate 3 D stereo area schematic;
Fig. 3 is the A-A sectional view of Fig. 2
1 is the deposition mask plate among the figure, 2 is the figure opening of figure open area, 3 is 3-D solid structure, 11 is the elevated regions of 3 D stereo deposition mask plate evaporation face, 22 is the sunk area of 3 D stereo deposition mask plate ito surface, 33 is the ito surface of 3 D stereo deposition mask plate, and 44 is the evaporation face of 3 D stereo deposition mask plate.
Embodiment
Embodiment 1:
As described in Fig. 1-3, a kind of 3 D stereo deposition mask plate 1, the figure opening 2 that comprises the figure open area, has 3-D solid structure 3, described 3-D solid structure 3 is made of sunk area 22 and elevated regions 11, described sunk area 22 is than the low sunk structure of mask plate plate face, and described elevated regions 11 is than the high bulge-structure of mask plate plate face.The material of described mask plate 1 comprises iron and two kinds of elements of nickel, and described iron level is 40%, and the content of nickel is 60%.The degree of depth of described sunk area 22≤50 μ m, the height of elevated regions 11≤50 μ m.It is 90 that described sunk area 22 forms angle α with mask plate 1 plate face
0, it is 90 that described elevated regions 11 forms angle β with mask plate 1 plate face
0The thickness of described mask plate is 100um, and the homogeneity COV of described ferro-nickel alloy plating is less than 5%; Described ferro-nickel alloy plating surface brightness is the one-level light.In use, the one side that 3 D stereo deposition mask plate has sunk area 22 is used for close ito substrate, is referred to as the ito surface 33 of 3 D stereo deposition mask plate; And the another side of 3 D stereo deposition mask plate has elevated regions 11, deviates from ito substrate, is used for evaporation, is referred to as the evaporation face 44 of 3 D stereo deposition mask plate.
Embodiment 2:
A kind of 3 D stereo deposition mask plate, the figure opening that comprises the figure open area, has 3-D solid structure, described 3-D solid structure is made of sunk area and elevated regions, described sunk area is than the low sunk structure of mask plate plate face, and described elevated regions is than the high bulge-structure of mask plate plate face.The material of described mask plate comprises iron and two kinds of elements of nickel, and described iron level is 50%, and the content of nickel is 50%.The degree of depth of described sunk area≤1 μ m, the height of elevated regions≤1 μ m.The scope that described sunk area and mask plate plate face form angle is 80
0, the scope that described elevated regions and mask plate plate face form angle is 80
0The thickness of described mask plate is 20um, and the homogeneity COV of described ferro-nickel alloy plating is less than 5%; Described ferro-nickel alloy plating surface brightness is the one-level light.In use, the one side that 3 D stereo deposition mask plate has sunk area is used for close ito substrate, is referred to as the ito surface of 3 D stereo deposition mask plate; And the another side of 3 D stereo deposition mask plate has elevated regions, deviates from ito substrate, is used for evaporation, is referred to as the evaporation face of 3 D stereo deposition mask plate.
Embodiment 3:
A kind of 3 D stereo deposition mask plate, the figure opening that comprises the figure open area, has 3-D solid structure, described 3-D solid structure is made of sunk area and elevated regions, described sunk area is than the low sunk structure of mask plate plate face, and described elevated regions is than the high bulge-structure of mask plate plate face.The material of described mask plate comprises iron and two kinds of elements of nickel, and described iron level is 55%, and the content of nickel is 45%.The degree of depth of described sunk area≤50 μ m, the height of elevated regions≤50 μ m.The scope that described sunk area and mask plate plate face form angle is 85
0, the scope that described elevated regions and mask plate plate face form angle is 85
0The thickness of described mask plate is 60 μ m, and the homogeneity COV of described ferro-nickel alloy plating is less than 5%; Described ferro-nickel alloy plating surface brightness is the one-level light.In use, the one side that 3 D stereo deposition mask plate has sunk area is used for close ito substrate, is referred to as the ito surface of 3 D stereo deposition mask plate; And the another side of 3 D stereo deposition mask plate has elevated regions, deviates from ito substrate, is used for evaporation, is referred to as the evaporation face of 3 D stereo deposition mask plate.
Above embodiment purpose is to illustrate the present invention, and unrestricted protection scope of the present invention, all application that come by simple change of the present invention all drop in protection scope of the present invention.
Claims (11)
1. 3 D stereo deposition mask plate, comprise the figure open area, it is characterized in that, has 3-D solid structure, described 3-D solid structure is made of sunk area and elevated regions, described sunk area is than the low sunk structure of mask plate plate face, and described elevated regions is than the high bulge-structure of mask plate plate face.
2. 3 D stereo deposition mask plate according to claim 1 is characterized in that, described sunk area is in the one side of mask plate, and described elevated regions is at the another side of mask plate, and described depressed area is less than described elevated regions.
3. 3 D stereo deposition mask plate according to claim 1 is characterized in that, the material of described mask plate comprises iron and two kinds of elements of nickel.
4. 3 D stereo deposition mask plate according to claim 3 is characterized in that, the content of described ferro element is 40%～55%, and the content of described nickel element is 45%～60%.
5. 3 D stereo deposition mask plate according to claim 4 is characterized in that, described iron level is 40%, and the content of nickel is 60%.
6. 3 D stereo deposition mask plate according to claim 4 is characterized in that, described iron level is 50%, and the content of nickel is 50%.
7. 3 D stereo deposition mask plate according to claim 4 is characterized in that, described iron level is 55%, and the content of nickel is 45%.
8. 3 D stereo deposition mask plate according to claim 1 is characterized in that, the degree of depth of described sunk area≤50 μ m, the height of elevated regions≤50 μ m.
9. 3 D stereo deposition mask plate according to claim 8 is characterized in that, the degree of depth of described sunk area≤1 μ m, the height of elevated regions≤1 μ m.
10. according to each described 3 D stereo deposition mask plate of claim 1-9, it is characterized in that the scope that described sunk area and mask plate plate face form angle is 80
0～90
0, the scope that described elevated regions and mask plate plate face form angle is 80
0～90
0
11. according to each described 3 D stereo deposition mask plate of claim 1-9, it is characterized in that the thickness of described mask plate is 20～100 μ m, the homogeneity COV of described ferro-nickel alloy plating is less than 5%; Described ferro-nickel alloy plating surface brightness is the one-level light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210010714.1A CN103205713B (en) | 2012-01-16 | 2012-01-16 | 3 D stereo Vapor deposition mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210010714.1A CN103205713B (en) | 2012-01-16 | 2012-01-16 | 3 D stereo Vapor deposition mask plate |
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| Publication Number | Publication Date |
|---|---|
| CN103205713A true CN103205713A (en) | 2013-07-17 |
| CN103205713B CN103205713B (en) | 2016-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210010714.1A Expired - Fee Related CN103205713B (en) | 2012-01-16 | 2012-01-16 | 3 D stereo Vapor deposition mask plate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105714249A (en) * | 2016-04-19 | 2016-06-29 | 上海和辉光电有限公司 | Mask plate, evaporation device and evaporation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1804138A (en) * | 2005-11-14 | 2006-07-19 | 深圳市允升吉电子有限公司 | Mask electro-forming method for vaporization coating of organic light-emitting display |
| JP2006347165A (en) * | 2005-05-20 | 2006-12-28 | Process Lab Micron:Kk | Metal mask for making pattern |
| JP2010275598A (en) * | 2009-05-29 | 2010-12-09 | Seiko Epson Corp | Vapor deposition mask and method of manufacturing the same |
| CN202688418U (en) * | 2012-01-16 | 2013-01-23 | 昆山允升吉光电科技有限公司 | Three-dimensional stereo vapor plating mask plate |
-
2012
- 2012-01-16 CN CN201210010714.1A patent/CN103205713B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006347165A (en) * | 2005-05-20 | 2006-12-28 | Process Lab Micron:Kk | Metal mask for making pattern |
| CN1804138A (en) * | 2005-11-14 | 2006-07-19 | 深圳市允升吉电子有限公司 | Mask electro-forming method for vaporization coating of organic light-emitting display |
| JP2010275598A (en) * | 2009-05-29 | 2010-12-09 | Seiko Epson Corp | Vapor deposition mask and method of manufacturing the same |
| CN202688418U (en) * | 2012-01-16 | 2013-01-23 | 昆山允升吉光电科技有限公司 | Three-dimensional stereo vapor plating mask plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105714249A (en) * | 2016-04-19 | 2016-06-29 | 上海和辉光电有限公司 | Mask plate, evaporation device and evaporation method |
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|---|---|
| CN103205713B (en) | 2016-08-03 |
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