CN103203698A - Glass sheet clamp for low-temperature ultrasound anodic bonding device - Google Patents
Glass sheet clamp for low-temperature ultrasound anodic bonding device Download PDFInfo
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- CN103203698A CN103203698A CN2013101005296A CN201310100529A CN103203698A CN 103203698 A CN103203698 A CN 103203698A CN 2013101005296 A CN2013101005296 A CN 2013101005296A CN 201310100529 A CN201310100529 A CN 201310100529A CN 103203698 A CN103203698 A CN 103203698A
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Abstract
Provided is a glass sheet clamp for low-temperature ultrasound anodic bonding of a silicon wafer and a glass sheet. The glass sheet clamp is composed of a high-pressure gas joint, a first clamping piece, a first pre-tightening spring, a first pre-tightening piece, a first pre-tightening screw, a second clamping piece, a second pre-tightening spring, a second pre-tightening piece and a second pre-tightening screw. The glass sheet clamp is simple in structure, and clamping force can be adjusted in a multidirectional mode while clamping strength of the glass sheet is guaranteed.
Description
Technical field
The present invention relates to the clamper in a kind of MEMS encapsulation, relate in particular to a kind of sheet glass clamper for the ultrasonic anode linking device of low temperature.
Background technology
Anode linkage and lead-in wire bonding are the main bonding welding methods in the MEMS encapsulation.
The lead-in wire bonding is a kind of technical process ultrasonic, hot, pressure is connected to each other the pad on chip and the lead frame with gold or copper conductor of utilizing, can remove the oxide of bonded interface by ultrasonic friction, softening bonded interface, under heat and the effect of pressure, gold or copper and pad (being generally aluminum pad) are welded together, patent documentation: CN1773688A for example, it is mainly used in the welding between the metal.
Anode linkage claims electrostatic bonding or field to help bonding again, in the MEMS technical field, mainly be the surface bond technology of glass and silicon, its basic principle is that dc power anode is connect silicon chip, negative pole connects sheet glass, because the performance classes of glass under certain high temperature is similar to electrolyte, and silicon chip is when temperature is elevated to 300 ℃～400 ℃, resistivity will be down to 0.1 Ω m because of intrinsic excitation, the conducting particles (as Na+) of glass kind floats to the glass surface of negative electrode under External Electrical Field at this moment, and stay negative electrical charge at the glass surface of next-door neighbour's silicon chip, because the drift of Na+ makes and produces electric current in the circuit and flow, the glass surface of next-door neighbour's silicon chip can form one deck as thin as a wafer width be about the space-charge region (or claiming depletion layer) of a few μ m.Because depletion layer is electronegative, silicon chip is positively charged, so there is bigger electrostatic attraction between silicon chip and the glass, both are closely contacted, and at bonding face generation physical-chemical reaction, form the Si-O covalent bond of strong bonded, silicon and glass interface are linked together securely.Compare with other bonding techniques, anode linkage has that cost is low, technology is simple, bond strength is high and advantage such as good airproof performance, also has less demanding and can tolerate the significant advantage of bigger surface roughness to super-clean environment in addition with respect to silicon fusion bonding techniques.Therefore at the MEMS device that sealing, bond strength are had relatively high expectations, as vacuum transducer, micromechanical infrared detector, three-dimensional micro-acceleration gauge, mechanical little gyro, miniature atomic clock rubidium chamber etc., anode linkage is indispensable process means when carrying out the encapsulation of road, back.Also in the making of MEMS devices such as silica-based mixing microsensor, little generator and micro fluidic device, encapsulation, use widely simultaneously.Therefore the anode linkage state-of-art has significant effects to the MEMS continuous advancement in technology.
In present anodic bonding techniques, cross the electric conductivity variation that low temperature can make glass, glass can't soften simultaneously, then can't realize the wriggling at glass surface microcosmic peak, cause the interface of glass and silicon chip can't reach the distance of electrostatic force, so high temperature is the necessary condition that realizes this anode linkage.But high temperature makes anode linkage be easy to generate following problem again: one, high temperature cause the MEMS device failure.For some temperature sensitive device, too high temperature can make its precision reduce, even can make its destruction and lost efficacy, and the temperature that these micro-structurals and circuit can bear has strict restriction, otherwise will cause components from being damaged or influence its service life, surpass 15 minutes as cmos circuit down at 400 ℃ the Si-Al reaction will take place, circuit structure is destroyed.Its two, high temperature causes residual stress easily.The high temperature long duration of action is easy to generate thermal stress on silicon-glass bonding matrix, thermal stress can't discharge after finishing the bonding cooling, can cause MEMS device job insecurity and reliability to reduce.Its three, the high-temperature induction ions diffusion.In some MEMS device, in order to realize specific function, often in silicon base, mix some specific ion, and when these doped MEMS devices are carried out bonding, the bonding process of high temperature can make dopant spread again, this will change Impurity Distribution and electrology characteristic, if the interface exists some pollutions and defective, under action of high temperature, also can spread apart, make the product failure zone become uncontrollable, make bonded interface electrology characteristic deterioration simultaneously, seriously influenced the performance of MEMS device.
These problems that exist in the high temperature bonding process more and more can not adapt to the demand of MEMS device high-performance development.The adverse effect that the MEMS device is produced at the anodic bonding, the method that has the medium barrier plasma discharging surface to handle at present realizes low temperature anodic bonding technique, patent documentation: CN102659071A for example, but the discharge voltage that the method needs is 500-2000V, this is infeasible to some MEMS device to the high voltage sensitivity, high pressure punctures the circuit in the MEMS device easily, thereby damage the MEMS device that needs bonding, in addition, its workbench heating-up temperature scope is 250-350 ℃, temperature is for the MEMS device that has, and is still too high, can influence the performance of MEMS device.
Therefore, at above-mentioned problems of the prior art, be necessary to provide a kind of and can under cryogenic conditions, realize the device of anode linkage, to overcome above-mentioned defective.
Summary of the invention
The object of the present invention is to provide a kind of sheet glass clamper for the ultrasonic anode linking device of low temperature, this clamper has guaranteed applying the anode linkage that lower temperature lower silicon slice and sheet glass realizability can be good.
To achieve these goals, the invention provides following technical scheme:
A kind of sheet glass clamper, this sheet glass clamper be by the gases at high pressure joint, first holding piece, first preloading spring, the first pretension sheet, the first pretension screw, second holding piece, second preloading spring, the second pretension sheet, the second pretension screw is formed, first holding piece links to each other with the first pretension sheet by first preloading spring, the first pretension screw withstands the first pretension sheet, and second holding piece links to each other with the second pretension sheet by second preloading spring, and the second pretension screw withstands the second pretension sheet.
Wherein, described first holding piece and second holding piece are 90 degree settings at grade.
Wherein, described sheet glass clamper is put on the temperature control bonding stove.
Wherein, described temperature control bonding stove is arranged on the base plate by the hand-operated lifting platform.
Compared with prior art, the present invention has following beneficial effect:
(1) clamping device of the present invention has been simplified the structure of clamper.
(2) structure of employing preloading spring, pretension sheet and pretension screw in the grip strength that has guaranteed sheet glass, can be adjusted chucking power multi-facetedly.
Description of drawings
Fig. 1 is the whole assembling of the ultrasonic anode linking device of low temperature of the present invention schematic diagram.
Fig. 2 is the sheet glass clamper schematic diagram of the ultrasonic anode linking device of low temperature of the present invention.
Fig. 3 is the silicon slice holder schematic diagram of the ultrasonic anode linking device of low temperature of the present invention.
Fig. 4 is the clamping part schematic diagram of the silicon slice holder of the ultrasonic anode linking device of low temperature of the present invention.
Fig. 5 is the silicon slice holder profile of the ultrasonic anode linking device of low temperature of the present invention.
The specific embodiment
The invention will be further described below in conjunction with accompanying drawing.
The ultrasonic anode linking device of a kind of low temperature as shown in Figure 1 comprises base plate 1, hand-operated lifting platform 2, temperature control bonding stove 3, sheet glass clamper 4, silicon slice holder 5, ultrasonic amplitude transformer 6, Z axle self-raising platform 7, microscope 8, X-axis platform 9, Z bracing strut 10, Y-axis platform 11, supersonic generator 12, dc source 13, electric support 14, control system 15.
Wherein as shown in Figure 2, sheet glass clamper 4 is by gases at high pressure joint 4-1, the first holding piece 4-2, the first preloading spring 4-3, the first pretension sheet 4-4, the first pretension screw 4-5, the second holding piece 4-6, the second preloading spring 4-7, the second pretension sheet 4-8, the second pretension screw 4-9 forms, the first holding piece 4-2 links to each other with the first pretension sheet 4-4 by the first preloading spring 4-3, the first pretension screw 4-5 withstands the first pretension sheet 4-4, and the second holding piece 4-6 links to each other with the second pretension sheet 4-8 by the second preloading spring 4-7, and the second pretension screw 4-9 withstands the second pretension sheet 4-8.
Wherein as shown in Figure 3-Figure 5, silicon slice holder 5 is by luffing bar contiguous block 5-1, insulation spacer 5-2, gases at high pressure joint 5-3, vacuum suction joint 5-4, high-tension electricity contact pin 5-5, silicon chip clamping cavity 5-6, the 3rd pretension screw 5-7, the 3rd pretension sheet 5-8, the 3rd preloading spring 5-9, the 3rd holding piece 5-10, vacuum suction mouth 5-11, the 4th pretension screw 5-12, the 4th pretension sheet 5-13, the 4th preloading spring 5-14, the 4th holding piece 5-15, gases at high pressure passage 5-16, vacuum suction passage 5-17 forms, the 3rd holding piece 5-10 links to each other with the 3rd pretension sheet 5-8 by the 3rd preloading spring 5-9, the 3rd pretension screw 5-7 withstands the 3rd pretension sheet 5-8, and the 4th holding piece 5-15 links to each other with the 4th pretension sheet 5-13 by the 4th preloading spring 5-14, and the 4th pretension screw 5-12 withstands the 4th pretension sheet 5-13, gases at high pressure joint 5-3 connects gases at high pressure, gases at high pressure open certain distance by the 3rd holding piece 5-10 and the 4th holding piece 5-15 that gases at high pressure passage 5-16 promotes on the silicon slice holder 5, and vacuum suction joint 5-4 connects vavuum pump, and 5-17 is adsorbed on silicon chip on the silicon slice holder 5 by the vacuum suction passage.Insulation spacer 5-2 is arranged between luffing bar contiguous block 5-1 and the high-tension electricity contact pin 5-5, and luffing bar contiguous block 5-1 links to each other with ultrasonic amplitude transformer 6, and high-tension electricity contact pin 5-5 connects dc source 13.
It is as follows to use the ultrasonic anode linking device of low temperature of the present invention to carry out the method for bonding:
At first, it is 180 ~ 200 ℃ that control system 15 control temperature control bonding stoves 3 are set to temperature, after temperature control bonding furnace temperature is stable, control system 15 will connect the magnetic valve of gases at high pressure joint 4-1 on the sheet glass clamper 4 and open, gases at high pressure joint 4-1 connects gases at high pressure, the first holding piece 4-2 and the second holding piece 4-6 that gases at high pressure promote on the sheet glass clamper 4 open certain distance, sheet glass is placed on the sheet glass clamper 4, control system 15 is controlled closed electromagnetic valves then, remove gases at high pressure, the first holding piece 4-2 and the second holding piece 4-6 are respectively under the pressure effect of the first preloading spring 4-3 and the second preloading spring 4-7, promote the first holding piece 4-2 and the second holding piece 4-6 pressed glass sheet, sheet glass is fixed on the sheet glass clamper 4.The big I of clamping force is decided by the first pretension sheet 4-4, the first preloading spring 4-3 and the second pretension sheet 4-8, the second preloading spring 4-7, when the first pretension screw 4-5 and the second pretension screw 4-9 tighten toward sheet glass clamper 4 inside, understand the corresponding promotion pretension sheet first pretension sheet 4-4 and reach the second pretension sheet 4-8 compressing the first preloading spring 4-3 and the second preloading spring 4-7, thereby make clamping force increase.Otherwise clamping force reduces.
Silicon chip is placed on the right front ends of sheet glass clamper 4, adjusts the silicon chip position and alignd with two outward flanges of sheet glass clamper 4 in the both sides of silicon chip.Control system 15 control X-axis platforms 9 and 11 motions of Y-axis platform, microscope 8 is aimed at silicon chip, control system 15 control X-axis platform 9 and Y-axis platforms 11, silicon slice holder 5 is moved to the silicon chip top, the magnetic valve that connects gases at high pressure joint 5-3 on the silicon slice holder 5 is opened, gases at high pressure joint 5-3 connects gases at high pressure, the 3rd holding piece 5-10 and the 4th holding piece 5-15 that gases at high pressure promote on the silicon slice holder 5 open certain distance, the 7 down motions of control system 15 control Z axle self-raising platforms, when the sensor on being integrated in ultrasonic amplitude transformer 6 detects silicon slice holder 5 and touches silicon chip, 7 stop motions of Z axle self-raising platform.The magnetic valve that will connect vacuum suction joint 5-4 on the silicon slice holder 5 is then opened, vacuum suction joint 5-4 connects vavuum pump, silicon chip is adsorbed on the silicon slice holder 5, the closed electromagnetic valve of control system 15 control connection gases at high pressure joint 5-3, remove gases at high pressure, the 3rd holding piece 5-10 and the 4th holding piece 5-15 are respectively under the pressure effect of the 3rd preloading spring 5-9 and the 4th pretension screw 5-12, promote the 3rd holding piece 5-10 and the 4th holding piece 5-15 compresses silicon chip, silicon chip is fixed on the silicon slice holder 5, the big I of clamping force is by the 3rd pretension sheet 5-8, the 3rd preloading spring 5-9 and the 4th pretension sheet 5-13, the 4th preloading spring 5-14 decides, when the 3rd pretension screw 5-7 and the 4th pretension screw 5-12 tighten toward silicon slice holder 5 inside, corresponding promotion the 3rd pretension sheet 5-8 of meeting and the 4th pretension sheet 5-13 compress the 3rd preloading spring 5-9 and the 4th preloading spring 5-14, thereby make clamping force increase; Otherwise clamping force reduces.Z axle self-raising platform 7 certain distance that moves upward.
The magnetic valve of gases at high pressure joint 5-3 is opened on the control system 15 control connection silicon slice holders 5, gases at high pressure joint 5-3 connects gases at high pressure, the 3rd holding piece 5-10 and the 4th holding piece 5-15 that gases at high pressure promote on the silicon slice holder 5 open certain distance, make no longer clamping silicon chip of silicon slice holder 5, control system 15 control Z axle self-raising platforms 7 segment distance that moves upward, close the magnetic valve that connects gases at high pressure joint 5-3, remove gases at high pressure, make the 3rd holding piece 5-10 and the 4th holding piece 5-15 return back to initial position.
The magnetic valve of gases at high pressure joint 4-1 is opened on the control system 15 control connection sheet glass clampers 4, gases at high pressure joint 4-1 connects gases at high pressure, the first holding piece 4-2 and the second holding piece 4-6 that gases at high pressure promote on the sheet glass clamper 4 open certain distance, make no longer clamping sheet glass of sheet glass clamper 4, the silicon chip that bonding is good and sheet glass be 4 taking-ups from the sheet glass clamper, close the magnetic valve that connects gases at high pressure joint 4-1, remove gases at high pressure, make the first holding piece 4-2 and the second holding piece 4-6 return back to initial position, finish the ultrasonic anode linkage of low temperature of silicon chip and sheet glass.
Adopt silicon chip and sheet glass bond strength after the ultrasonic anode linkage method of this this low temperature to be measured as 9.8MPa, the bonding time is 25 seconds.The bond strength of following table for adopting conventional high-temperature anode linkage method under different bonding parameters, to record.
| Numbering | Pressure (gf) | Temperature (℃) | Voltage (V) | Time (min) | Bond strength (MPa) |
| 1 | 30 | 400 | 800 | 5 | 7.8 |
| 2 | 30 | 400 | 700 | 5 | 6.5 |
| 3 | 30 | 350 | 700 | 5 | 6.2 |
From above contrast as can be seen, adding is ultrasonic in anode linkage technology can improve anode linkage technology greatly, is reaching under the same bond strength bonding temperature, bonding voltage and bonding time all can reduce greatly, and is significant to the development of MEMS anode linkage technology.
Claims (7)
1. sheet glass clamper that is used for the ultrasonic anode linkage of low temperature of silicon chip and sheet glass, described sheet glass clamper (4) is by gases at high pressure joint (4-1), first holding piece (4-2), first preloading spring (4-3), the first pretension sheet (4-4), the first pretension screw (4-5), second holding piece (4-6), second preloading spring (4-7), the second pretension sheet (4-8), the second pretension screw (4-9) is formed, first holding piece (4-2) links to each other with the first pretension sheet (4-4) by first preloading spring (4-3), the first pretension screw (4-5) withstands the first pretension sheet (4-4), and second holding piece (4-6) links to each other with the second pretension sheet (4-8) by second preloading spring (4-7), and the second pretension screw (4-9) withstands the second pretension sheet (4-8).
2. sheet glass clamper according to claim 1 is characterized in that: described first holding piece (4-2) is 90 degree at grade with second holding piece (4-6) and arranges.
3. sheet glass clamper according to claim 1, it is characterized in that: described sheet glass clamper (4) is put on the temperature control bonding stove (3).
4. sheet glass clamper according to claim 1, it is characterized in that: described temperature control bonding stove (3) is arranged on the base plate (1) by hand-operated lifting platform (2).
5. sheet glass clamper according to claim 1, it is characterized in that: described low temperature is 200 ℃.
6. the ultrasonic anode linkage equipment of low temperature that is used for silicon chip and sheet glass is characterized in that, uses the described sheet glass clamper of above-mentioned arbitrary claim that sheet glass is carried out clamping.
7. the ultrasonic anode linkage equipment of low temperature according to claim 6 is characterized in that, also comprises silicon slice holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310100529.6A CN103203698B (en) | 2013-03-27 | 2013-03-27 | Low-temperature ultrasound anodic bonding device for silicon wafer and glass sheet |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310100529.6A CN103203698B (en) | 2013-03-27 | 2013-03-27 | Low-temperature ultrasound anodic bonding device for silicon wafer and glass sheet |
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| CN103203698A true CN103203698A (en) | 2013-07-17 |
| CN103203698B CN103203698B (en) | 2014-12-17 |
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| CN201310100529.6A Expired - Fee Related CN103203698B (en) | 2013-03-27 | 2013-03-27 | Low-temperature ultrasound anodic bonding device for silicon wafer and glass sheet |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103921229A (en) * | 2014-04-25 | 2014-07-16 | 成都西图科技有限公司 | Sheet clamp |
| CN108127451A (en) * | 2018-02-09 | 2018-06-08 | 昆山金海格电子有限公司 | A kind of multistation compensates fitting device automatically |
| CN113601606A (en) * | 2021-08-05 | 2021-11-05 | 上海京宁环保科技有限公司 | Engineering plastic plate processing method and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE19635865A1 (en) * | 1996-09-04 | 1998-03-05 | Menkhoff Karlheinz | Clamping force reinforcing arrangement |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108127451A (en) * | 2018-02-09 | 2018-06-08 | 昆山金海格电子有限公司 | A kind of multistation compensates fitting device automatically |
| CN108127451B (en) * | 2018-02-09 | 2023-11-17 | 昆山金海格电子有限公司 | Multi-station automatic compensation tool device |
| CN113601606A (en) * | 2021-08-05 | 2021-11-05 | 上海京宁环保科技有限公司 | Engineering plastic plate processing method and device |
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| CN103203698B (en) | 2014-12-17 |
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