CN103201407A

CN103201407A - Plasma apparatus

Info

Publication number: CN103201407A
Application number: CN2011800540485A
Authority: CN
Inventors: 安东靖典
Original assignee: Nissin Electric Co Ltd
Current assignee: Nissin Electric Co Ltd
Priority date: 2011-01-12
Filing date: 2011-01-12
Publication date: 2013-07-10
Also published as: JPWO2012095961A1; KR20130099151A; JP5655865B2; WO2012095961A1

Abstract

Gas piping (19-21) supplies an Ar gas to the inside of a vacuum container (1). A high frequency power supply (12) makes a high frequency current flow to planar electrodes (2, 3) from one end of each of the electrodes (2, 3). Consequently, plasma is generated in the vicinity of the surfaces of target members (4, 5) due to inductive coupling. A low frequency power supply (16) applies alternating current voltages to the electrodes (2, 3). Consequently, electrons in the plasma flow into a target member (one of the target members (4, 5)) disposed in contact with a positively biased electrode (one of the electrodes (2, 3)), and positive ions in the plasma flow into a target member (the other one of the target members (4, 5)) disposed in contact with a negatively biased electrode (the other one of the electrodes (2, 3)). Then, the electrons and the positive ions in the plasma stay between the electrodes (2, 3) and in the vicinity of the surfaces of the target members (4, 5).

Description

Plasma device

Technical field

The present invention relates to a kind of plasma body (plasma) device.

Background technology

Plasma device in the past comprises target (target), magnet, high frequency electric source and the matching circuit (non-patent literature 1) that is made of dielectric medium.For in the surface configuration magnetic field of target, and magnet is arranged on the back side of target.High frequency electric source is connected in target.Matching circuit is connected between high frequency electric source and the target.Target is to be carried out water cooling.

And processed substrate and substrate holder (holder) are configured on the position with the target subtend.In addition, according to purpose, low-frequency power or direct supply that processed substrate and substrate holder and the frequency of the frequency ratio high frequency electric source that is connected in target is low are connected, to apply bias voltage.

Action in the plasma device in the past is as described below.By imposing on the high-frequency voltage of target, and between target and vacuum vessel and substrate, produce plasma body based on condenser coupling.Generally speaking, the high frequency discharge of condenser coupling type is along with plasma density increases, and produces the reflection by the caused high frequency of plasma body, and High frequency power enters plasma body not yet in effectly as a result, thereby is difficult to further densification.

So, form magnetic field at the near surface of target, utilize the electronics in this magnetic field seizure plasma body, and carry out magnetic charging (magnetron discharge), realize densification thus.

Electronics in the plasma body carries out back and forth movement by the alternating electric field that is produced by the high-frequency voltage that imposes on target between target and substrate or vacuum vessel, by being connected in series in variable condenser (variable condenser) in the matching circuit and charged as the dielectric medium of target material, the result is on the surface of target, and negative direct-current biasing and high-frequency voltage are overlapping.

Positive ion in the plasma body is introduced by this electronegative direct-current biasing, and is incident to the surface of target with high-energy.Thereby the target surface is by sputter (sputtering).In addition, simultaneously, on the surface of target, along with temperature rises and must carry out the cooling of target, with the stabilization that realizes the target surface and suppress by the rising from the substrate temperature of the caused subtend of radiation of target.

Fly substrate to subtend on the target surface through the particle of sputter, form by with the overlay film that the equal element of element constitutes that constitutes of target.Because electronegative with respect to target, and substrate and vacuum vessel relatively become positive potential, so when the sputter particle flies to substrate surface, also fly to substrate surface as the electronics of electronegative particle.

The plasma body on target surface is followed Distribution of Magnetic Field and is produced strong ununiformity.Generally speaking, under the situation of circular, be formed on the structure of configuration magnetic line of force between the central authorities of target and the periphery, the result produces circular high density plasma, thereby the sputter of target also is circular generation.

The prior art document

Non-patent literature

Non-patent literature 1: Da Shi helps one, the big scholar of holt, rock portion occasion moral, true, the clear Tian Chun of new well also, Xiao Song filial piety, stone bridge dawn, neat rattan one also, the heavy light of assistant rattan, political affairs in the last reign of a dynasty is auxilliary, " be suitable for TFT sputtering apparatus and the negative electrode thereof of large-scale basal disc ", ULVAC technical journal (ULVAC TECHNICAL JOURNAL) the 64th phase in 2006.

Summary of the invention

The problem that the invention desire solves

Yet, in the plasma device in the past, because when the sputter particle flies to substrate surface, also fly to substrate surface as the electronics of electronegative particle, substrate is heated by the electronics with energy so exist, and make the impaired problem of film that is formed on the substrate.

Therefore, the present invention finishes in order to solve described problem, and purpose is to provide a kind of temperature that suppresses substrate to rise and suppresses plasma device to the damage that is formed on the film on the substrate.

Solve the means of problem

According to the embodiment of the present invention, plasma device comprises a plurality of electrodes, a plurality of target parts and first and second power supply.A plurality of electrodes are plane configuration, and have rectangular planeform separately.A plurality of target parts arrange corresponding to a plurality of electrodes, each free dielectric medium constitute and with the surface contact configuration of the substrate-side of corresponding electrode.First power supply makes high-frequency current with first frequency flow into a plurality of electrodes from an end of a plurality of electrodes.Second source with the alternating voltage that will have the second frequency lower than first frequency impose on two electrodes mode a plurality of electrodes are applied the voltage with second frequency.

The effect of invention

In the plasma device of embodiments of the present invention, by first power supply high-frequency current is flowed into to a plurality of electrodes, and produce plasma body at the near surface of a plurality of target parts that contact configuration with a plurality of electrodes based on jigger coupling.Then, the voltage that will have second frequency by second source imposes on a plurality of electrodes, and makes electronics and positive ion in the plasma body flow into different target parts respectively, and is trapped in the near surface that reaches a plurality of target parts between a plurality of electrodes.

Therefore, the temperature that can suppress substrate rises and to being formed on the damage of the film on the substrate.

Description of drawings

Fig. 1 is the sketch chart of the plasma device of embodiments of the present invention.

Fig. 2 is the sectional view of vacuum vessel, electrode, target parts, gas pipe arrangement 1 and substrate holder between line II-II shown in Figure 1.

Fig. 3 is the enlarged view of regional REG shown in Figure 2.

Fig. 4 is the sectional view of vacuum vessel, electrode, target parts and substrate holder between line IV-IV shown in Figure 1.

Fig. 5 is the concept map that the action to plasma device shown in Figure 1 describes.

Fig. 6 is the concept map of other electrode configurations in the expression plasma device shown in Figure 1.

Fig. 7 is in the expression plasma device shown in Figure 1 and then concept maps other electrode configurations.

Fig. 8 is in the expression plasma device shown in Figure 1 and then concept maps other electrode configurations.

Fig. 9 is in the expression plasma device shown in Figure 1 and then concept maps other electrode configurations.

Figure 10 is the sketch chart of other plasma devices of embodiments of the present invention.

Figure 11 is vertical view and the sectional view of electrode shown in Figure 10.

Embodiment

On one side embodiments of the present invention are at length described with reference to accompanying drawing on one side.In addition, to identical among the figure or considerable part mark same-sign, and not repeat specification.

Fig. 1 is the sketch chart of the plasma device of embodiments of the present invention.With reference to Fig. 1, the plasma device 10 of embodiments of the present invention comprises vacuum vessel 1,

electrode

2,3,

target parts

4,5, electrical condenser (condenser) 6,7,13～15, variable inductance 8,9, matching circuit 11, high frequency electric source 12, low-frequency power 16, wave filter (filter) 17,18, gas pipe arrangement 19～21 and substrate holder 22.

Vacuum vessel 1 has the rectangular shape of hollow, and is made of stainless steel (stainless).

Electrode

2,3 has rectangular planeform separately, and is made of metal.And electrode 2, the 3rd in the outside of vacuum vessel 1, is plane configuration along the top board 1A of vacuum vessel 1.In the case, electrode 2 is spaced apart with electrode 3.

Target parts

4,5 correspond respectively to

electrode

2,3 and arrange.And

target parts

4,5 insert separately in the through hole of the top board 1A that is arranged on vacuum vessel 1 and are fixed on top board 1A.And target parts 4 contact configuration with the surface of substrate 30 sides of electrode 2, and target parts 5 contact configuration with the surface of substrate 30 sides of electrode 3.In addition,

target parts

4,5 each free SiO ₂And Si ₃N ₄Constitute in dielectric medium.And target parts 4, the 5th carry out water cooling by water-cooled mechanism (not shown).

Electrical condenser 6 and variable inductance 8 are connected in series between the end and matching circuit 11 of electrode 2.Electrical condenser 7 and variable inductance 9 are connected in series between the end and matching circuit 11 of electrode 3.

Matching circuit 11 is connected between high frequency electric source 12 and the variable inductance 8,9 and reaches between high frequency electric source 12 and the earthing potential GND.And matching circuit 11 is made of variable condenser 111,112.Variable condenser 111 is connected between high frequency electric source 12 and the variable inductance 8,9.Variable condenser 112 is connected between high frequency electric source 12 and the earthing potential GND.

High frequency electric source 12 is connected in the variable condenser 111,112 of matching circuit 11.Electrical condenser 13 is connected between the other end and electrical condenser 15 of electrode 2.Electrical condenser 14 is connected between the other end and electrical condenser 15 of electrode 3.Electrical condenser 15 be connected electrical condenser 13,14 and earthing potential GND between.

Low-frequency power 16 is connected in wave filter 17,18.Wave filter 17 is connected between low-frequency power 16 and the electrode 2.Wave filter 18 is connected between low-frequency power 16 and the electrode 3.

Gas pipe arrangement 19～21 is configured in the vacuum vessel 1.And gas pipe arrangement 19 is outsides of the side on the electrode 2 that is plane configuration, 3 width, along

electrode

2,3 long side direction DR1 and dispose.Gas pipe arrangement 20 is that

electrode

2,3 in adjacency is along

electrode

2,3 long side direction DR1 and dispose.Gas pipe arrangement 21 is outsides of the opposite side on the electrode 2 that is plane configuration, 3 width, along

electrode

2,3 long side direction DR1 and dispose.

Substrate holder 22 is fixed on the bottom surface 1B of vacuum vessel 1 by supporting mechanism (not shown).And, substrate holder 22 internal heater.

In addition, in plasma device 10, substrate 30 disposes in the mode with

target parts

4,5 subtends.And the exhaust system that the gas in the vacuum vessel 1 is discharged is connected in vacuum vessel 1.This exhaust system is made of with the structure that rotary pump (rotary pump) tandem is connected for example turbomolecular pump (turbo molecular pump), and turbomolecular pump is connected in vacuum vessel 1 side.

(frequency: 1MHz～13.56MHz) end from electrode 2 is supplied to electrode 2 to the high-frequency current that electrical condenser 6 will be supplied with via variable inductance 8.The high-frequency current that electrical condenser 7 will be supplied with via variable inductance 9 is supplied to electrode 3 from an end of electrode 3.

Variable inductance 8,9 makes the high-frequency current of supplying with via matching circuit 11 from high frequency electric source 12 flow to

electrode

2,3 equably.In the case, the high-frequency current I1 that is supplied to electrode 2 and the high-frequency current I2 that is supplied to electrode 3 both can have been measured, become equal mode with this high-frequency current I1, I2 that determines and adjust variable inductance 8,9, also can measure high-frequency current I1, I2 in advance and become inductance value when equating, variable inductance 8,9 is set described inductance value.

Matching circuit 11 is to be supplied to variable inductance 8,9 behind the high-frequency current inhibitory reflex ripple that will supply with from high frequency electric source 12.

High frequency electric source 12 produces high-frequency current, and the high-frequency current that will produce is supplied to matching circuit 11.To the flow through high-frequency current of electrode 2 of electrical condenser 13 is supplied to electrical condenser 15.To the flow through high-frequency current of electrode 3 of electrical condenser 14 is supplied to electrical condenser 15.Electrical condenser 15 makes from electrical condenser 13,14 high-frequency current and flows into to earthing potential GND.

Low-frequency power 16 produces the alternating voltage of the scope of 50Hz～50kHz, and the alternating voltage that will produce is via

wave filter

17,18 and impose on electrode 2,3.This alternating voltage is to be benchmark and the positive and negative voltage that alternately changes with the earthing potential.

Wave filter 17 will be removed from the radio-frequency component of the alternating voltage of low-frequency power 16, and the alternating voltage that will be somebody's turn to do through the removal radio-frequency component imposes on electrode 2.Wave filter 18 will be removed from the radio-frequency component of the alternating voltage of low-frequency power 16, and the alternating voltage that will be somebody's turn to do through the removal radio-frequency component imposes on electrode 3.

Each supplies with for example argon gas (Ar gas) since gas-holder gas pipe arrangement 19～21 in vacuum vessel 1.

Substrate holder 22 supporting substrates 30, and substrate 30 is heated to desired temperature.

Fig. 2 is the sectional view of vacuum vessel 1,

electrode

2,3,

target parts

4,5, gas pipe arrangement 19～21 and substrate holder 22 between line II-II shown in Figure 1.

With reference to Fig. 2, target parts 4 engage (bonding) with electrode 2, and target parts 5 engage (bonding) with electrode 3.

And electrode 2 and target parts 4 are to dispose in the mode of target parts 4 with a plane of top board 1A formation of vacuum vessel 1.And electrode 3 and target parts 5 are to dispose in the mode of target parts 5 with a plane of top board 1A formation of vacuum vessel 1.

Insulation flange (insulating flange) 25,26 has the roughly section shape of L font separately.And insulation flange 25 is configured between the top board 1A of electrode 2 and target parts 4 and vacuum vessel 1, and insulation flange 26 is configured between the top board 1A of electrode 3 and target parts 5 and vacuum vessel 1.

Ground connection framework

23,24 is made of for example aluminium (aluminum) or stainless steel, and is fixed on the top board 1A of vacuum vessel 1.And ground connection framework 23 stops up the distolateral of insulation flanges 25.And ground connection framework 24 stops up the distolateral of insulation flanges 26.

Electrode

2,3 has width W 1 separately.And, electrode 2 and electrode 3 be spaced apart interval D 1.Width W 1 is for example 50mm～200mm, and interval D 1 is for example 100mm～200mm.In addition,

electrode

2,3 has the area that equates mutually.And

target parts

4,5 have respectively and

electrode

2,3 area identical.

Target parts

4,5 and the distance of substrate 30 be for example 20mm～100mm.

Vacuum vessel 1 has venting port EXH at bottom surface 1B.Exhaust system is connected in venting port EXH, and the gas in the vacuum vessel 1 is discharged.

Gas pipe arrangement 19～21 has hole 19A, 20A, 21A respectively.And, hole 19A, 20A, 21A towards with from

electrode

2,3 to the side of substrate 30 in the opposite direction.In addition, as shown in Figure 1, hole 19A, 20A, 21A are arranging a plurality of at

electrode

2,3 long side direction DR1.

And low-frequency power 16

counter electrode

2,3 apply alternating voltage.

Fig. 3 is the enlarged view of regional REG shown in Figure 2.With reference to Fig. 3, at insulation flange 25 and electrode 2 through hole 401 is being set, at the top board 1A of vacuum vessel 1 screw (tap hole) 402 is being set.And insulation neck ring (insulating collar) 403 is inserted in the through hole 401.Bolt 404 passes insulation neck ring 403 and is fixed at screw 402.Thus, the electrode 2 through engaging and the target parts 4 top board 1A that is fixed on vacuum vessel 1.In addition, insulation neck ring 403 being set is in order to make bolt 404 and electrode 2 insulation.

And, on the top board 1A of vacuum vessel 1, contact with insulation flange 25 and to dispose O shape ring 405, on electrode 2, contact with insulation flange 25 and to dispose O shape and encircle 406.And, utilize O shape ring 405,406, keep the resistance to air loss of vacuum vessel 1.

The one distolateral space 410 that is positioned at of insulation flange 25.And, the interval D 2 of the top board 1A of distolateral and a vacuum vessel 1A of insulation flange 25, and distolaterally being set to less than 1mm with interval D 3 target parts 4 of insulation flange 25.In the case, interval D 2 both can be identical with interval D 3, also can be different.

In addition, at the top board 1A of vacuum vessel 1 screw 407 is being set, at ground connection framework 23 through hole 408 is being set.And bolt 409 passes through hole 408 and is fixed at screw 407.Thus, the mode in obstruction space 410 is fixed on the top board 1A of vacuum vessel 1 to ground connection framework 23 not contact target parts 4 and insulation flange 25.Ground connection framework 23 is set is in order to prevent the discharge in the space 410 under the situation that in vacuum vessel 1, produces plasma body and the flange 25 that prevents from insulating is exposed in the plasma body.

In addition, the part of the electrode 2 of opposite side shown in Figure 2, target parts 4, ground connection framework 23 and insulation flange 25 is also by being constituted with structure identical construction shown in Figure 3.And electrode 3 shown in Figure 2 and target parts 5 also utilize the method identical with electrode 2 shown in Figure 3 and target parts 4 to be fixed on the top board 1A of vacuum vessel 1.

Fig. 4 is the sectional view of vacuum vessel 1, electrode 3, target parts 5 and substrate holder 22 between line IV-IV shown in Figure 1.

With reference to Fig. 4, target parts 5 also utilize ground connection framework 24 at the two ends of long side direction DR1 and are fixed on the top board 1A of vacuum vessel 1.And electrode 3 also utilizes insulation flange 26 and is fixed on ground connection framework 24 in the mode that contacts with target parts 5 at the two ends of long side direction DR1.In addition, the part of electrode 3, target parts 5, ground connection framework 24 and insulation flange 26 is by being constituted with structure identical construction shown in Figure 3.

And high frequency electric source 12 is supplied to electrode 3 with high-frequency current from an end 3A of electrode 3.

About on

electrode

2,3 long side direction DR1, electrode 2 being fixed on the mechanism of the top board 1A of vacuum vessel 1, also identical with the mechanism of the top board 1A that electrode 3 is fixed on vacuum vessel 1 shown in Figure 4.

Action in the article on plasma body device 10 describes.Fig. 5 is the concept map that the action to plasma device shown in Figure 1 10 describes.Form under the situation of film at substrate 30 using plasma device 10 to utilize sputter, use exhaust system to be vented to 1 * 10 in the vacuum vessel 1 ^-3Below the Pa.

Then, in vacuum vessel 1, import Ar gas via gas pipe arrangement 19～21.In the case, the flow of Ar gas is for example 50sccm～200sccm.And Ar gas is that hole 19A, 20A, 21A from gas pipe arrangement 19～21 is towards the top board 1A of vacuum vessel 1 and be supplied in the vacuum vessel 1.And, use exhaust system the pressure in the vacuum vessel 1 to be set at the scope of 0.13Pa～133.3Pa.

So, high frequency electric source 12 produces for example High frequency power of 5kW, and via matching circuit 11, variable inductance 8,9 and electrical condenser 6,7 supply with the High frequency power of the 5kW of described generation to electrode 2, an end of 3.

And low-frequency power 16 applies the low frequency power of 5kW via

wave filter

17,18 counter electrode 2,3.Thus, alternating voltage is imposed on

electrode

2,3.

As a result, the high-frequency current that current value is equal flows in

electrode

2,3 along long side direction DR1.And, produce induction field by the high-frequency current that in

electrode

2,3, flows along long side direction DR1 at

target parts

4,5 periphery, thereby produce the plasma body 40 that is directed into the Ar gas in the vacuum vessel 1.

And when applying positive bias by alternating voltage counter electrode 2, the electronics in the plasma body 40 flows into target parts 4, and the positive ion in the plasma body 40 flows into target parts 5.And when applying negative bias by alternating voltage counter electrode 2, the positive ion in the plasma body 40 flows into target parts 4, and the electronics in the plasma body 40 flows into target parts 5.

As a result, the charged particle in the plasma body 40 (electronics and positive ion) is trapped in across in

electrode

2,3 the zone, and flows into target parts 4,5.And by the inflow of positive ion,

target parts

4,5 are by sputter, thus with

target parts

4,5 formation element be that the film of roughly the same formation is deposited on the substrate 30.

When film was deposited on the substrate 30, high frequency electric source 12 stopped the supply of High frequency power, and low-frequency power 16 stops the supply of low frequency power.And, stop in vacuum vessel 1, supplying with Ar gas, and utilize exhaust system to be vented to 1 * 10 in the vacuum vessel 1 ^-3Below the Pa.Thus, utilize sputter to form the release of film.

As mentioned above, in plasma device 10, to

flat electrode

2,3 high-frequency current is flowed into from an end along long side direction DR1.As a result, produce induction field by the high-frequency current that in

electrode

2,3, flows at

target parts

4,5 near surface, thereby produce the jigger coupling type plasma body 40 that is directed into the Ar gas in the vacuum vessel 1 at

target parts

4,5 near surface.And, because by low-frequency power alternating voltage is imposed on

electrode

2,3, so the electronics in the plasma body 40 alternately flows into target parts 4 and target parts 5, and the positive ion in the plasma body 40 alternately flows into target parts 5 and target parts 4, thus the charged particle in the plasma body 40 (electronics and positive ion) be trapped in

target parts

4,5 near.

Therefore, the charged particle in the plasma body 40 is suppressed to the inflow of substrate 30, thereby the temperature of the film can suppress film forming the time rises and to the damage of film.

And, in plasma device 10, produce plasma body because pass through jigger coupling, thus can under the situation that does not adopt magnetic

field target parts

4,5 near the generation high density plasma.

In addition, in plasma device 10, because do not adopt magnetic field, so the distribution of plasma body 40 can be equal, thereby

target parts

4,5 are equally consumed by sputter.Therefore, can improve

target parts

4,5 utilising efficiency.

In addition, in plasma device 10, because use the plasma body that produces by jigger coupling, so the decomposition efficiency height of gaseous matter can make

target parts

4,5 element and the decomposed substance of gas react expeditiously.

In addition, in plasma device 10 because use the plasma body that produces by jigger coupling, thus even if under low gaseous tension, also can generate highdensity plasma body, thereby can be under the good environment of vacuum tightness produced film.As a result, can reduce impurity in the formed film.

In addition, in plasma device 10, because Ar gas sprays from the top board 1A of gas pipe arrangement 19～21 towards vacuum vessel 1, thus can avoid Ar gas to the direct influence of substrate 30, and can make the Ar gas dispersion in whole vacuum vessel 1.

Fig. 6 is the concept map of other electrode configurations in the expression plasma device 10 shown in Figure 1.With reference to Fig. 6, in plasma device 10, also electrode 2,3 can be replaced to electrode 31～33,

target parts

4,5 are replaced to target parts 34～36, variable inductance 8,9 is replaced to variable inductance 51～53.In the case, plasma device 10 also comprises inductance 41～43.

Electrode 31～33 has and

electrode

2,3 identical rectangular planeforms separately, and is made of aluminium.Electrode 31～33rd utilizes with

electrode

2,3 identical methods and contacts configuration with target parts 34～36 respectively.And electrode 31～33rd is plane configuration with described interval D 1.In addition, the area with electrode 31～33 is made as S respectively ₃₁～S ₃₃The time, S ₃₁+ S ₃₃=S ₃₂Relation set up.

Target parts 34～36 correspond respectively to electrode 31～33 and arrange.Target parts 34～36th utilize with

target parts

4,5 identical methods to be the plane top board 1A that is fixed on vacuum vessel 1.And target parts 34～36 have respectively and electrode 31～33 area identical, and contact configuration with the surface of substrate 30 sides of electrode 31～33.

The radio-frequency component of the alternating voltage that wave filter 17 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via inductance 41,42 and impose on electrode 31,33.

And the radio-frequency component of the alternating voltage that wave filter 18 will be accepted from low-frequency power 16 is removed, and the alternating voltage that will be somebody's turn to do through the removal radio-frequency component imposes on electrode 32 via inductance 43.

Using under the situation of three electrodes 31～33, low-frequency power 16 is to become identical polar and electrode 32 with electrode 31,33 to become with the mode counter electrode 31～33 of electrode 31,33 opposite polarity and apply alternating voltage.

Using under the situation of electrode 31～33 an end 31A, 32A, 33A counter electrode 31～33 supply high frequency electric currents of high frequency electric source 12 on electrode 31,32,33 the long side direction.In the case, be made as I respectively when the high-frequency current that will flow to electrode 31～33 ₃₁～I ₃₃The time, variable inductance 51～53 is so that I ₃₁+ I ₃₃=I ₃₂The relation mode adjustment of setting up flow to the high-frequency current I of electrode 31～33 ₃₁～I ₃₃And, so that I ₃₁+ I ₃₃=I ₃₂The relation mode adjustment of setting up flow to the high-frequency current I of electrode 31～33 ₃₁～I ₃₃Situation under, both can measure the high-frequency current I that is supplied to electrode 31～33 ₃₁～I ₃₃, with the high-frequency current I that determines at this ₃₁～I ₃₃Between make I ₃₁+ I ₃₃=I ₃₂The mode set up of relation adjust variable inductance 51～53, also can measure I in advance ₃₁+ I ₃₃=I ₃₂The inductance value of relation when setting up, variable inductance 51～53 is set these inductance value that determine.

When counter electrode 31,33 applied positive bias, the electronics in the plasma body 40 flowed into target parts 34,36, and the positive ion in the plasma body 40 flows into target parts 35.And when counter electrode 31,33 applied negative bias, the electronics in the plasma body 40 flowed into target parts 35, and the positive ion in the plasma body 40 flows into target parts 34,36.And, at the area S of electrode 31～33 ₃₁～S ₃₃Between, such S as described ₃₁+ S ₃₃=S ₃₂Relation set up.As a result, have the area of the target parts of electronics inflow to equate with the area of the target parts that have positive ion to flow into, thereby plasma body 40 is stable.

Therefore, comprise at plasma device 10 under the situation of three electrodes 31～33, also can be such as described, the charged particle in the plasma body 40 (electronics and positive ion) is trapped between the electrode of adjacency the near surface of (=electrode 31,32 and electrode 32,33) and target parts 34～36.Thus, the charged particle in the plasma body 40 is suppressed to the inflow of substrate 30, thereby the temperature of the film can suppress film forming the time rises and to the damage of film.

In addition, in Fig. 6, omitted and be equivalent to electrical condenser 6,7 electrical condenser.

Fig. 7 is in the expression plasma device 10 shown in Figure 1 and then concept maps other electrode configurations.With reference to Fig. 7, in plasma device 10, also electrode 2,3 can be replaced to electrode 61～6n(n and be the odd number more than 3),

target parts

4,5 are replaced to target parts 71～7n, variable inductance 8,9 is replaced to variable inductance 91～9n.In the case, plasma device 10 also comprises inductance 81～8n.

Electrode 61～6n has and

electrode

2,3 identical rectangular planeforms separately, and is made of aluminium.Electrode 61～6n utilizes with

electrode

2,3 identical methods to contact configuration with target parts 71～7n respectively.And electrode 61～6n is plane configuration with described interval D 1.In addition, the area with electrode 61～6n is made as S respectively ₆₁～S _6nThe time, S ₆₁+ S ₆₃=S ₆₂, S ₆₃+ S ₆₅=S ₆₄..., S _6n-2+ S _6n=S _6n-1Relation set up.

Target parts 71～7n corresponds respectively to electrode 61～6n and arranges.Target parts 71～7n utilizes with

target parts

4,5 identical methods to be the plane top board 1A that is fixed on vacuum vessel 1.And target parts 71～7n has the area identical with electrode 61～6n respectively, and contacts configuration with the surface of substrate 30 sides of electrode 61～6n.

The radio-frequency component of the alternating voltage that wave filter 17 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via

inductance

81,83,85 ..., 8n and impose on

electrode

61,63,65 ..., 6n.

And the radio-frequency component of the alternating voltage that wave filter 18 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via

inductance

82,84 ..., 8n-1 and impose on

electrode

62,64 ..., 6n-1.

Using under the situation of n electrode 61～6n, low-frequency power 16 be with

electrode

61,63 ..., 6n become identical polar and

electrode

62,64 ..., 6n-1 becomes with

electrode

61,63 ..., polarity that 6n is opposite mode counter electrode 61～6n apply alternating voltage.

Under the situation of using electrode 61～6n, high frequency electric source 12 is the end 61A～6nA counter electrode 61～6n supply high frequency electric currents from the long side direction of electrode 61～6n.In the case, be made as I respectively when the high-frequency current that will flow to electrode 61～6n ₆₁～I _6nThe time, variable inductance 91～9n is so that I ₆₁+ I ₆₃=I ₆₂, I ₆₃+ I ₆₅=I ₆₄..., I _6n-2+ I _6n=I _6n-1The relation mode adjustment of setting up flow to the high-frequency current I of electrode 61～6n ₆₁～I _6nAnd, so that I ₆₁+ I ₆₃=I ₆₂, I ₆₃+ I ₆₅=I ₆₄..., I _6n-2+ I _6n=I _6n-1The relation mode adjustment of setting up flow to the high-frequency current I of electrode 61～6n ₆₁～I _6nSituation under, both can measure the high-frequency current I that is supplied to electrode 61～6n ₆₁～I _6n, with the high-frequency current I that determines at this ₆₁～I _6nBetween make I ₆₁+ I ₆₃=I ₆₂, I ₆₃+ I ₆₅=I ₆₄..., I _6n-2+ I _6n=I _6n-1The mode set up of relation adjust variable inductance 91～9n, also can measure I in advance ₆₁+ I ₆₃=I ₆₂, I ₆₃+ I ₆₅=I ₆₄..., I _6n-2+ I _6n=I _6n-1The inductance value of relation when setting up, variable inductance 91～9n is set the inductance value that this determines.

When

counter electrode

61,63 ..., when 6n applies positive bias, electronics in the plasma body 40 flow into

target parts

71,73 ..., 7n, positive ion in the plasma body 40 flow into

target parts

72,74 ..., 7n-1.And, when

counter electrode

61,63 ..., when 6n applies negative bias, positive ion in the plasma body 40 flow into

target parts

71,73 ..., 7n, electronics in the plasma body 40 flow into

target parts

72,74 ..., 7n-1.In addition, at the area S of electrode 61～6n ₆₁～S _6nBetween, such as described, S ₆₁+ S ₆₃=S ₆₂, S ₆₃+ S ₆₅=S ₆₄..., S _6n-2+ S _6n=S _6n-1Relation set up.As a result, have the area of the target parts of electronics inflow to equate with the area of the target parts that have positive ion to flow into, thereby plasma body 40 is stable.

Therefore, comprise at plasma device 10 under the situation of the odd number electrode 61～6n more than three, also such as described, the charged particle in the plasma body 40 (electronics and positive ion) be trapped between the electrode of adjacency (=

electrode

61,62,

electrode

62,63 ..., between electrode 6n-1,6n) with the near surface of target parts 71～7n.Thus, the charged particle in the plasma body 40 is suppressed to the inflow of substrate 30, thereby the temperature of the film can suppress film forming the time rises and to the damage of film.

Fig. 8 is in the expression plasma device 10 shown in Figure 1 and then concept maps other electrode configurations.With reference to Fig. 8, in plasma device 10, also electrode 2,3 can be replaced to electrode 101～104,

target parts

4,5 are replaced to target parts 105～108, variable inductance 8,9 is replaced to variable inductance 121～124.In the case, plasma device 10 also comprises inductance 113～116.

Electrode 101～104 has and

electrode

2,3 identical rectangular planeforms separately, and is made of aluminium.Electrode 101～104th utilizes with

electrode

2,3 identical methods and contacts configuration with target parts 105～108 respectively.And electrode 101～104th is plane configuration with described interval D 1.In addition, electrode 101～104 has the area that equates mutually.

Target parts 105～108 correspond respectively to electrode 101～104 and arrange.Target parts 105～108th utilize with

target parts

4,5 identical methods to be the plane top board 1A that is fixed on vacuum vessel 1.And target parts 105～108 have respectively and electrode 101～104 area identical, and contact configuration with the surface of substrate 30 sides of electrode 101～104.

The radio-frequency component of the alternating voltage that wave filter 17 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via inductance 113,114 and impose on electrode 105,107.

And the radio-frequency component of the alternating voltage that wave filter 18 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via inductance 115,116 and impose on electrode 106,108.

Using under the situation of four electrodes 101～104, low-frequency power 16 is to become identical polar and electrode 102,104 with electrode 101,103 to become with the mode counter electrode 101～104 of electrode 101,103 opposite polarity and apply alternating voltage.

Using under the situation of electrode 101～104, high frequency electric source 12 is an

end

101A, 102A, 103A, 104A counter electrode 101～104 supply high frequency electric currents on electrode 101,102,103,104 the long side direction.In the case, variable inductance 121～124 becomes the high-frequency current that the mode adjustment that equates mutually flow to electrode 101～104 so that flow to the high-frequency current of electrode 101～104.And, so that flow to the high-frequency current of electrode 101～104 and become under the situation of high-frequency current that the mode adjustment that mutually equates flow to electrode 101～104, both can measure the high-frequency current that is supplied to electrode 101～104, become the mode that equates mutually with this high-frequency current that determines and adjust variable inductance 121～124, inductance value in the time of also can measuring the high-frequency current that flow to electrode 101～104 in advance and equate is mutually set these inductance value that determine to variable inductance 121～124.

When counter electrode 101,103 applied positive bias, the electronics in the plasma body 40 flowed into target parts 105,107, and the positive ion in the plasma body 40 flows into target parts 106,108.And when counter electrode 101,103 applied negative bias, the electronics in the plasma body 40 flowed into target parts 106,108, and the positive ion in the plasma body 40 flows into target parts 105,107.And such as described, the area of electrode 101～104 equates mutually.As a result, have the area of the target parts of electronics inflow to equate with the area of the target parts that have positive ion to flow into, thereby plasma body 40 is stable.

Therefore, comprise at plasma device 10 under the situation of four electrodes 101～104, also can be such as described, the charged particle in the plasma body 40 (electronics and positive ion) is trapped between the electrode of adjacency the near surface of (=electrode 101,102, electrode 102,103, and electrode 103,104) and target parts 105～108.Thus, the charged particle in the plasma body 40 is suppressed to the inflow of substrate 30, thereby the temperature of the film can suppress film forming the time rises and to the damage of film.

Fig. 9 is in the expression plasma device 10 shown in Figure 1 and then concept maps other electrode configurations.With reference to Fig. 9, in plasma device 10, also electrode 2,3 can be replaced to electrode 131～13m(m and be the even number more than 4),

target parts

4,5 are replaced to target parts 141～14m, variable inductance 8,9 is replaced to variable inductance 151～15m.In the case, plasma device 10 also comprises inductance 161～16m.

Electrode 131～13m has and

electrode

2,3 identical rectangular planeforms separately, and is made of aluminium.Electrode 131～13m utilizes with

electrode

2,3 identical methods to contact configuration with target parts 141～14m respectively.And electrode 131～13m is plane configuration with described interval D 1.In addition, the area of electrode 131～13m equates mutually.

Target parts 141～14m corresponds respectively to electrode 131～13m and arranges.Target parts 141～14m utilizes with

target parts

4,5 identical methods to be the plane top board 1A that is fixed on vacuum vessel 1.And target parts 141～143m has the area identical with electrode 131～13m respectively, and contacts configuration with the surface of substrate 30 sides of electrode 131～13m.

The radio-frequency component of the alternating voltage that wave filter 17 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via inductance 161,163 ..., 16m-1 and impose on electrode 131,133 ..., 13m-1.

And the radio-frequency component of the alternating voltage that wave filter 18 will be accepted from low-frequency power 16 is removed, and will be somebody's turn to do through the alternating voltage of removal radio-frequency component via inductance 162,164 ..., 16m and impose on electrode 132,134 ..., 13m.

Using under the situation of m electrode 131～13m, low-frequency power 16 be with electrode 131,133 ..., 13m-1 become identical polarity and electrode 132,134 ..., 13m becomes with electrode 131,133 ..., polarity that 13m-1 is opposite mode counter electrode 131～13m apply alternating voltage.

Under the situation of using electrode 131～13m, high frequency electric source 12 is the end 131A～13mA counter electrode 131～13m supply high frequency electric currents from the long side direction of electrode 131～13m.In the case, become the high-frequency current that the mode adjustment that equates mutually flow to electrode 131～13m so that flow to the high-frequency current of electrode 131～13m.And, so that flow to the high-frequency current of electrode 131～13m and become under the situation of high-frequency current that the mode adjustment that mutually equates flow to electrode 131～13m, both can measure the high-frequency current that is supplied to electrode 131～13m, so that becoming the mode that equates mutually, this high-frequency current that determines adjusts variable inductance 151～15m, also can measure the high-frequency current that flow to electrode 131～13m in advance and become inductance value when mutually equating, variable inductance 151～15m is set the inductance value that this determines.

When counter electrode 131,133 ..., when 13m-1 applies positive bias, electronics in the plasma body 40 flow into target parts 141,143 ..., 14m-1, positive ion in the plasma body 40 flow into target parts 142,144 ..., 14m.And, when counter electrode 131,133 ..., when 13m-1 applies negative bias, positive ion in the plasma body 40 flow into target parts 141,143 ..., 14m-1, electronics in the plasma body 40 flow into target parts 142,144 ..., 14m.In addition, such as described, the area of electrode 131～13m equates mutually.As a result, have the area of the target parts of electronics inflow to equate with the area of the target parts that have positive ion to flow into, thereby plasma body 40 is stable.

Therefore, comprise at plasma device 10 under the situation of the even number of electrodes 131～13m more than four, also can be such as described, the charged particle in the plasma body 40 (electronics and positive ion) be trapped between the electrode of adjacency (=electrode 131,132, electrode 132,133 ..., between electrode 13m-1,13m) with the near surface of target parts 141～14m.Thus, the charged particle in the plasma body 40 is suppressed to the inflow of substrate 30, thereby the temperature of the film can suppress film forming the time rises and to the damage of film.

Such as described, comprise under the situation that planeform is rectangular plural electrode at plasma device 10, make high-frequency current flow into plural electrode from an end of long side direction, and produce plasma body 40 at the near surface of target parts based on jigger coupling.And the charged particle in the plasma body 40 (electronics and positive ion) is trapped in the near surface that reaches the target parts between electrode.

Therefore, be under the plural situation at electrode, charged particle is suppressed to the inflow of substrate 30, thus the temperature of the film can suppress film forming the time rises and to the damage of film.

And by using described

various electrode

2,3, electrode 31～33, electrode 61～6n, electrode 101～104 and electrode 131～13m, the temperature of the film in the time of can suppressing film forming rises and the damage of film is formed film at the substrate 30 of arbitrary dimension.

Figure 10 is the sketch chart of other plasma devices of embodiments of the present invention.The plasma device of embodiments of the present invention also can be plasma device 10A shown in Figure 10.

With reference to Figure 10, plasma device 10A replaces to electrode 201,301 respectively with the

electrode

2,3 of plasma device shown in Figure 1 10, and is in addition, identical with plasma device 10.

Electrode 201,301 utilizes respectively with

electrode

2,3 identical methods and contacts configuration with target parts 4,5.And electrode 201,301 has mutual area identical.

Figure 11 is vertical view and the sectional view of electrode 201 shown in Figure 10.In addition, Figure 11 (a) is vertical view, and Figure 11 (b) is sectional view.

With reference to Figure 11, electrode 201 comprises flat board member 2010 and capacity cell 2020～2023.Flat board member 2010 has rectangular planeform, and is made of metal.Capacity cell 2020～2023rd respectively separates fixing interval D 4 and is configured on the long side direction DR1 of electrode 201.Interval D 4 is that the length according to electrode 201 determines, is for example 150～300mm.And capacity cell 2020～2023 spreads all over the whole width W 1 of flat board member 2010 separately and is arranged on the surperficial 2010A of substrate 30 sides of flat board member 2010.And, have width W 2 on the long side direction DR1 of capacity cell 2020～2023 each comfortable electrode 201.Width W 2 is for example 10～40mm.

Capacity cell 2020 comprises through hole 2011,

metal sheet

2012,2013,

electrical condenser

2014,2015 and insulant 2016.Through hole 2011 runs through flat board member 2010 and has width W 2.

Metal sheet

2012,2013 has the roughly section shape of L font separately.The flat board member 2010 of one end of metal sheet 2012 and a side of through hole 2011 electrically connects.The flat board member 2010 of one end of metal sheet 2013 and the opposite side of through hole 2011 electrically connects.

Electrical condenser

2014,2015 is connected in parallel between metal sheet 2012 and the metal sheet 2013.

Insulant 2016 is to be filled in the through hole 2011 with covered metal plate 2012, a part of 2013 and

electrical condenser

2014,2015 mode.

Capacity cell 2021～2023 each freedom and capacity cell 2020 identical formations constitute.

As mentioned above, electrode 201 is made of the formation that inductance and electrical condenser (capacitance) in series electrically connect on long side direction DR1.Thereby the impedance (impedance) on the long side direction DR1 of electrode 201 reduces.And the impedance of electrode 201 becomes minimum satisfying under the situation of resonant condition, and the potential difference of the go-and-retum of electrode 201 only is made of the potential difference that causes because of resistance components.

Therefore, even if the distance on the long side direction DR1 of electrode 201 is elongated, also can generate the little plasma body of potential difference.

In addition, electrode 301 shown in Figure 10 is made of the institute that constitutes identical with electrode shown in Figure 11 201.

And, in plasma device 10A, utilize sputter forms films at substrate 30 action and in plasma device 10, utilize sputter identical in the action of substrate 30 formation films.

As mentioned above, plasma device 10A comprises with fixed intervals D2 and is disposing along the electrode 201,301 of a plurality of capacity cells 2020～2023 of long side direction DR1 configuration, therefore, impedance on electrode 201,301 the long side direction DR1 reduces, and more high-frequency current flows along electrode 201,301 long side direction DR1.

Therefore, in plasma device 10A, the effect in plasma device 10, the density of the plasma body 40 that produces by jigger coupling is improved.And, in plasma device 10A, even if make electrode 201,301 length elongated, also can generate the little plasma body of potential difference.

In addition, in plasma device 10A, a plurality of capacity cells 2020～2023 can be not dispose with fixed intervals D2 on electrode 201,301 long side direction DR1 yet.This is because if dispose capacity cell 2020～2023 in the mode with the direction quadrature of high-frequency current, compare with the situation that does not dispose capacity cell 2020～2023 so, impedance on electrode 201,301 the long side direction DR1 reduces, the density of plasma body 40 is improved, and can generate the little plasma body of potential difference.

And, in plasma device 10A, also can carry out the change identical with the situation that in plasma device 10,

electrode

2,3 is replaced to electrode 31～33, electrode 61～6n, electrode 101～104 and electrode 131～13m.Therefore, in plasma device 10A, the temperature of the film in the time of also can suppressing film forming rises and the damage of film is formed film at the substrate 30 of arbitrary dimension.

In described explanation, illustrated and used Ar gas as the situation of sputter with gas, but in embodiments of the present invention, be not limited thereto, also the mixed gas of Ar gas and oxygen or nitrogen can be used as sputter gas.

And, in described explanation, plasma device 10,10A have been described, and each is self-contained along

electrode

2,3 etc. long side direction DR1 configuration and have situation towards the gas pipe arrangement 19～21 of hole 19A, the 20A of the direction of (

target parts

4,5 etc.) from substrate 30 to the target parts, 21A, but in embodiments of the present invention, be not limited thereto, as long as the plasma device of embodiments of the present invention comprises to the gas pipe arrangement of the vacuum vessel 1 interior Ar of importing gas.

And as long as the plasma device of embodiments of the present invention comprises following each one: a plurality of electrodes are plane configuration and have rectangular planeform separately; A plurality of target parts arrange corresponding to a plurality of electrodes, each free dielectric medium constitute and with the surface contact configuration of the substrate-side of corresponding electrode; First power supply makes high-frequency current with first frequency flow into a plurality of electrodes from an end of a plurality of electrodes; And second source, with the alternating voltage that will have the second frequency lower than first frequency impose on two electrodes mode a plurality of electrodes are applied the voltage with second frequency.

When the plasma device of embodiments of the present invention comprises a plurality of electrodes, a plurality of target parts and first and second power supply, by utilizing first power supply that high-frequency current is flowed into to a plurality of electrodes, can produce plasma body based on jigger coupling, and by utilize second source will have second frequency alternating voltage impose on a plurality of electrodes, and make electronics and positive ion in the plasma body flow into different target parts mutually.As a result, the electronics in the plasma body and positive ion are trapped between a plurality of electrodes and the near surface of a plurality of target parts, thereby the temperature of the film can suppress film forming the time rises and the damage of film is formed film at substrate 30.

Should think that the embodiment of current announcement is illustration in all respects, rather than restrictive.Scope of the present invention is not to be represented by the explanation of described embodiment, but is represented by the claim scope, and intention comprises and the implication of claim scope equalization and all changes in the scope.

Industrial utilizability

The present invention is applied to plasma device.

Claims

1. plasma device comprises:

A plurality of electrodes are plane configuration and have rectangular planeform separately;

A plurality of target parts arrange corresponding to described a plurality of electrodes, described a plurality of each free dielectric medium of target parts constitute and with the surface contact configuration of the substrate-side of corresponding electrode;

First power supply makes high-frequency current with first frequency flow into described a plurality of electrode from an end of described a plurality of electrodes; And

Second source, with the alternating voltage that will have the second frequency lower than described first frequency impose on two electrodes mode described a plurality of electrodes are applied the voltage with described second frequency.

2. plasma device according to claim 1, wherein said a plurality of electrodes comprise separately:

Flat board member has described planeform and is made of metal;

A plurality of capacity cells, in the long side direction of described flat board member is inserted into surperficial formed a plurality of through holes in the described substrate-side of described flat board member, and described a plurality of capacity cell two ends and described flat board member separately electrically connects; And

A plurality of insulants cover described a plurality of capacity cell.

3. plasma device according to claim 2, each a plurality of electrical condenser that freely is connected in parallel in the described flat board member of wherein said a plurality of capacity cells constitutes.

4. according to claim 2 or 3 described plasma devices, wherein said a plurality of through holes are formed in the described flat board member with the interval of setting.

5. according to arbitrary described plasma device in the claim 1 to 4, wherein also comprise a plurality of inductance, described a plurality of inductance is configured between described first power supply and the described a plurality of electrode, and a plurality of described high-frequency current that described a plurality of inductance also will flow into described a plurality of electrodes is set on an equal basis.

6. according to each described plasma device in the claim 1 to 5, wherein also comprise a plurality of gas pipe arrangements, described a plurality of gas pipe arrangements between two electrodes of adjacency with the outside of described a plurality of electrodes along the long side direction of described electrode and dispose.

7. plasma device according to claim 6, wherein said a plurality of gas pipe arrangements have separately towards with a plurality of holes in the opposite direction, side from from described electrode to described substrate.