CN103199156A - Indium antimonide (InSb) wafer and silicon (Si) wafer bonding method - Google Patents
Indium antimonide (InSb) wafer and silicon (Si) wafer bonding method Download PDFInfo
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- CN103199156A CN103199156A CN2013101090123A CN201310109012A CN103199156A CN 103199156 A CN103199156 A CN 103199156A CN 2013101090123 A CN2013101090123 A CN 2013101090123A CN 201310109012 A CN201310109012 A CN 201310109012A CN 103199156 A CN103199156 A CN 103199156A
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Abstract
The invention provides an indium antimonide (InSb) wafer and silicon (Si) wafer bonding method. The method includes a first step of carrying out high-temperature ultrasonic boiling and washing in organic solvent on an InSb wafer and a Si wafer which are respectively polished on at least one side and then using deionized water to wash the InSb wafer and the Si wafer, a second step of placing the Si wafer into acid solution for boiling and washing and then using the deionized water to wash, a third step of placing the Si wafer into alkali solution for boiling and washing and then using the deionized water to wash, and a fourth step of enabling the polished surface of the InSb wafer and the polished surface of the Si wafer to face inwards, carrying out laminating, then placing the two laminated wafers into a vacuum bonding machine and carrying out heat treatment to complete bonding of the InSb wafer and the Si wafer. The InSb wafer and Si wafer bonding method is simple in process and has strong practicality.
Description
Technical field
The present invention relates to semicon industry lattice mismatch heterojunction material growing technology field, relate in particular to a kind of method that is widely used in InSb wafer and the Si wafer bonding of infrared focus plane technology.
Background technology
The infrared focal plane detector particularly development of medium-wave band indium antimonide (InSb) infrared focal plane array (FPA) detector is comparatively ripe, is used widely in infrared guidance, tracking, staring imaging weaponry field.Indium antimonide (InSb) infrared focal plane array (FPA) detector system is formed by InSb pixel array and Si reading circuit flip-chip interconnection.Introduced stress behind InSb pixel array and the Si reading circuit flip-chip interconnection, will be cracked when strain exceeds the ability to bear of InSb, strain simultaneously also can reduce the performance of detector, produces blind element, and the Strain Distribution inequality causes the explorer response lack of homogeneity.
For reducing the influence of thermal stress, the someone adopts the way of extension InSb material on the Si substrate to prepare InSb pixel array in the world, in the hope of utilizing the coupling of Si substrate and Si reading circuit, obtains high-performance InSb FPA detector.But because the lattice mismatch of InSb material and Si is bigger, a large amount of boundary defects that produce in the epitaxial process and stress can cause material property sharply to worsen.And the bonding semiconductor technology has a lot of advantages, the material of InSb and these two kinds of lattice mismatches of Si and the coefficient of thermal expansion mismatch mode by bonding can be coupled together, can break through restrictions such as crystal orientation, lattice coupling, dislocation only local in the interface, thereby the flexibility of integrated technology is improved greatly.InSb/Si wafer behind the bonding is by being thinned to tens micron thickness to InSb, a series of device technologies such as spread then, at last ready-made InSb/Si pixel array is linked to each other by the In post with the Si reading circuit, the stress of the InSb film on the Si substrate and Si reading circuit reduces greatly like this, improve the performance of detector, reduced the cracked probability of device.
Direct Bonding between the semi-conducting material, the semi-conducting material doping content at its bonded interface place and surface roughness have extremely strict requirement, otherwise bonding quality is not high, cause device efficiency to reduce even false bonding.InSb and Si lattice constant differ greatly, and about 19.3%; Thermal coefficient of expansion differs about 107%.So big-difference will cause bonded interface more defect state to occur in bonding process because of thermal stress, influences machinery, the photoelectric characteristic at interface.At present the successful example of low-temperature bonding is a lot of in the world, utilize the plasma treatment wafer surface as people such as Tong Qinyi after, obtain the bonded energy etc. that interface bond can be higher than body InP material at 200 degree.
Yet in realizing process of the present invention, the applicant finds that the technology of existing InSb wafer and Si method of wafer bonding is all very complicated, and practicality is relatively poor.
Summary of the invention
(1) technical problem that will solve
For solving above-mentioned one or more problems, the invention provides the method for a kind of InSb wafer and Si wafer bonding.
(2) technical scheme
The method of a kind of InSb wafer and Si wafer bonding is provided according to an aspect of the present invention.This method comprises: steps A, and the InSb wafer of single-sided polishing at least and Si wafer are carried out high temperature ultrasonic respectively boil and wash in organic solvent, then use washed with de-ionized water; Step B places acid solution to boil the Si wafer and washes, and then uses deionized water rinsing; Step C places aqueous slkali to boil the Si wafer and washes, and then uses deionized water rinsing; Step e is inwardly fitted InSb wafer and Si wafer burnishing surface separately, and the two plates after then will fitting places in the vacuum bonding machine heat-treats, to finish the bonding of InSb wafer and Si wafer.
(3) beneficial effect
From technique scheme as can be seen, the method for InSb wafer of the present invention and Si wafer bonding has following beneficial effect:
(1) technology is simple, has stronger practicality;
(2) repeatability realizes easily than higher, bonding parameter, and the bonding time shortens, and wafer thickness is not had strict restriction, and the mechanical strength of bonding wafer, photoelectric characteristic etc. reach the requirement of device.
Description of drawings
Fig. 1 is the flow chart of embodiment of the invention InSb wafer and Si method of wafer bonding;
Fig. 2 A is through the InSb wafer of clean step and the schematic diagram of Si wafer in the method shown in Figure 1;
Fig. 2 B is the schematic diagram of the InSb/Si wafer of process bonding step in the method shown in Figure 1;
Fig. 2 C is the schematic diagram of the InSb/Si wafer of process attenuate step in the method shown in Figure 1.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.Need to prove that in accompanying drawing or specification description, similar or identical part is all used identical figure number.The implementation that does not illustrate in the accompanying drawing or describe is the form known to the those of ordinary skill in the affiliated technical field.In addition, though this paper can provide the demonstration of the parameter that comprises particular value, should be appreciated that parameter need not definitely to equal corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.
The present invention proposes a kind of new realization InSb and the method for Si bonding, can be applicable to InSb FPA detector.
In one exemplary embodiment of the present invention, provide the method for a kind of InSb wafer and Si wafer bonding.As shown in Figure 1, the method for this InSb wafer and Si wafer bonding may further comprise the steps:
Steps A is carried out high temperature ultrasonic respectively to the InSb wafer of single-sided polishing at least and Si wafer and is boiled and wash, and then uses washed with de-ionized water;
Further, in the steps A InSb wafer 10 of single-sided polishing being carried out the concrete journey of process that high temperature ultrasonic cleans comprises:
Substep A1 with the surface of acetone cotton balls wiping InSb wafer 10, examines under a microscope no tangible dirty particle, and such wafer just can be used for bonding;
Substep A2, with ethanol, acetone, trichloroethylene in order back and forth high temperature ultrasonic boil wash the InSb wafer each 3 times, with remove the surface organic substance and greasy dirt;
Substep A3 after having cleaned with ethanol, washes more than 5 minutes repeatedly with deionized water, and purpose is to remove surface organic matter and pollutes.
In this step, to the cleaning process of Si wafer with to the cleaning process of InSb wafer with similar, no longer detailed description herein.
Step B places strong acid solution with the Si wafer, for example the sulfuric acid solution of preparing according to following mole proportioning: 5H
25O
4: 1H
2O
2, in, boil and wash 10 minutes, used deionized water rinsing again 15 minutes;
Need to prove H
2SO
4Solution also can be used the acid substitution of other types, and for example: molar concentration is 20～30% hydrochloric acid solutions etc.In addition, boil the time of washing and can grasp flexibly as required, but should be greater than 5min.
Step C places RCAl (NH with the Si wafer
4OH: 4H
2O
2: 20H
2O) in the solution, boil and wash 10 minutes, used deionized water rinsing again 10 minutes;
Need to prove that RCAl solution also can replace with the weak caustic solution of other types.In addition, boil the time of washing and can grasp flexibly as required, but should be greater than 5min.
Step D carries out million cleanings to InSb wafer and Si wafer, and scavenging period got final product in about 2～5 minutes, and million the cleaning back is standby, shown in Fig. 2 A;
Step e is cutd open light with the InSb wafer that cleans up and Si wafer and is fitted towards interior, places bonding in the vacuum bonding machine, the aqueous vapor of heat-treating to drive away bonded interface, thus realize the bonding of InSb wafer and Si wafer;
Further, in the step e, place the step of bonding in the vacuum bonding machine to comprise the wafer after fitting:
Substep E1 places the anchor clamps that are placed with two wafers that post in the vacuum bonding machine, applies certain pressure by force application apparatus to wafer after the sealing, generally between 1MPa～5MPa;
Substep E2 vacuumizes the vacuum bonding machine, reaches 10 in vacuum degree
-4～10
-5After the Pa, can begin to set low temperature 30～90 degree, pre-bonding at this moment, relied on Van der Waals to carry out combination about 1 hour between the two plates in 30～90 ℃ of temperature ranges;
Substep E3, the wafer behind the pre-bonding slowly heats up, and keeps 1 hour at 120～200 degree, keeps the pressure of both sides of wafers;
This process can be removed the steam between the interface, and this process bonding time, more long bonded energy was more big.
Substep E4, wafer slowly heats up again, keeps the low-temperature bonding of about 1 hour 300～350 degree.
This substep can further be removed interface steam, increases the interface bond energy.The one-tenth key mode of bonded interface is followed the rising of temperature and the effusion of gas, and the Van der Waals during from pre-bonding is in conjunction with being transformed into the atomic bond combination.
Substep E5 begins slow cooling then, takes out wafer after room temperature from the vacuum bonding machine, shown in Fig. 2 B, thereby obtains the InSb/Si bonding wafer.
It should be noted that in the temperature-rise period, arrive 250 ℃ and will slowly heat up later on; Equally, from 350 ℃ toward 250 ℃ of whens cooling, also to slowly lower the temperature; Average about 0.2～0.5 ℃/minute, prevent that thermal stress from can not get release in time and causing the bonding failure.
Step F, InSb in mechanical reduction InSb/Si bonding wafer part be to 20 μ m, thereby finish the bonding of InSb wafer and Si wafer, shown in Fig. 2 C.
Experiment showed, InSb wafer (350 μ m) the process mechanical reduction on the bonding wafer, when reaching the 20 μ m left and right sides, except there was small amount of wear the corner, whole bonding wafer still was kept perfectly substantially, showed that bond strength has reached the subsequent technique requirement.
To the bonding technology of step F, the InSb/Si bonding wafer just can carry out the manufacture craft of next step infrared focal plane detectors such as diffusing, doping through above-mentioned steps A.In addition, when needs prepare InSb FPA detector, also need InSb/Si and Si reading circuit are passed through the In pole interconnection, form the heat coupling.This part is not emphasis of the present invention, repeats no more herein.
In the present embodiment, behind InSb and the Si bonding, the thickness interior (we organize and boundary layer can be controlled about 10nm) that various dislocations, defective only are confined to bonded interface tens nanometers can not go deep into the body material internal; When the temperature wide variation, stress between InSb and the Si increases, but because boundary layer has only tens nanometers, so the InSb film will shrink and do not produce defective such as dislocation along with Si expands together, takes place that bonded interface separates or the cracked possibility of InSb reduces.And the Si substrate of InSb/Si bonding wafer and Si reading circuit mate, and connect by the In post, and Si-Si has realized hot coupling, and the cracked possibility of InSb FPA reduces greatly.Also can improve infrared focal plane detector spare response homogeneity and rate of finished products greatly simultaneously, reduce the device blind element.
So far, present embodiment InSb wafer and the introduction of Si method of wafer bonding finish.Those skilled in the art should have clearly the present invention and understand in conjunction with the professional knowledge of self.
Need to prove that above-mentioned definition to each element and method is not limited in various concrete structures, shape or the mode of mentioning in the execution mode, those of ordinary skill in the art can replace simply to it with knowing, for example:
(1) concentration of boiling the time of washing, bonding time and acid/aqueous slkali etc. all can be adjusted as required;
(2) anchor clamps of bonding use can replace with the anchor clamps that homemade anchor clamps or bonding apparatus supplier provide;
(3) processing of organic substance or greasy dirt can also be made up various organic reagents according to technical staff's oneself experience in the cleaning process, can use forms such as methyl alcohol, carbon tetrachloride, isopropyl alcohol substitute such as acetone, trichloroethylene.
In sum, by method of the present invention, can realize InSb wafer and the unstressed bonding of Si wafer, be very suitable for preparing big face battle array infrared focal plane array seeker spare, can improve infrared focal plane detector spare response homogeneity and rate of finished products greatly, reduce the device blind element.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the method for an InSb wafer and Si wafer bonding is characterized in that, comprising:
Steps A is carried out high temperature ultrasonic respectively with the InSb wafer of single-sided polishing at least and Si wafer and is boiled and wash in organic solvent, then use washed with de-ionized water;
Step B places acid solution to boil described Si wafer and washes, then use deionized water rinsing;
Step C places aqueous slkali to boil described Si wafer and washes, then use deionized water rinsing;
Step e is inwardly fitted InSb wafer and Si wafer burnishing surface separately, and the two plates after then will fitting places in the vacuum bonding machine heat-treats, to finish the bonding of InSb wafer and Si wafer.
2. method according to claim 1 is characterized in that, in the described steps A wafer high temperature ultrasonic in organic solvent boiled wash into:
With wafer with ethanol, acetone and trichloroethylene in order ultrasonic the boiling of multiple high temp wash.
3. method according to claim 1 is characterized in that, among the described step B, described acid solution is sulfuric acid solution, H in this sulfuric acid solution
2SO
4With H
2O
2Mol ratio be 5: 1, describedly boil time of washing greater than 5min.
4. method according to claim 1 is characterized in that, among the described step C, described aqueous slkali is RCAl solution, NH in this RCAl solution
4OH, H
2O
2, H
2The mol ratio of O is 1: 4: 20, describedly boils time of washing greater than 5min.
5. method according to claim 1 is characterized in that, the two plates after will fitting in the described step e places in the vacuum bonding machine heat-treats, and comprising:
Substep E1 places the two plates after fitting in the vacuum bonding machine, exerts pressure to two plates by force application apparatus;
Substep E2 under vacuum environment, keeps the axial compressive force of two plates, and two plates is carried out bonding under 30～90 ℃ temperature environment;
Substep E3 heats up, and keeps the axial compressive force of two plates, and two plates is carried out bonding under 120～200 ℃ temperature environment;
Substep E4 heats up, and keeps the axial compressive force of two plates, and two plates is carried out bonding under 300～350 ℃ temperature environment;
Substep E5, cooling is taken out the two plates behind the bonding from the vacuum bonding machine.
6. method according to claim 5 is characterized in that, among the described substep E1 to E4, is exerted pressure between 1MPa～5MPa in the two plates both sides, and the vacuum degree of described vacuum environment is between 10
-4～10
-5Between the Pa.
7. method according to claim 5 is characterized in that, among described substep E1, substep E2 and the substep E3, the temperature retention time of bonding is 1hour.
8. method according to claim 1 is characterized in that, in the intensification of described substep E2, substep E3 and E4, the cooling step of step e 5, the speed of lifting/lowering temperature is between 0.2～0.5 ℃/minute.
9. according to each described method in the claim 1 to 8, it is characterized in that, also comprise after the described step C:
Step D carries out million cleanings to InSb wafer and Si wafer, and scavenging period is between 3～5min.
10. according to each described method in the claim 1 to 8, it is characterized in that, also comprise after the described step e:
Step F, the InSb part in the mechanical reduction InSb/Si bonding wafer is to preset thickness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310109012.3A CN103199156B (en) | 2013-03-29 | 2013-03-29 | The method of InSb wafer and Si bonding chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310109012.3A CN103199156B (en) | 2013-03-29 | 2013-03-29 | The method of InSb wafer and Si bonding chip |
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|---|---|
| CN103199156A true CN103199156A (en) | 2013-07-10 |
| CN103199156B CN103199156B (en) | 2015-10-21 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987523A (en) * | 2017-06-05 | 2018-12-11 | 北京弘芯科技有限公司 | Infrared focal plane detector and preparation method thereof |
| CN109683354A (en) * | 2019-01-15 | 2019-04-26 | 中国科学院半导体研究所 | A kind of middle infrared band modulator and preparation method thereof |
| CN111063609A (en) * | 2019-12-18 | 2020-04-24 | 武汉百臻半导体科技有限公司 | Semiconductor chip cleaning method |
| CN111223810A (en) * | 2018-11-27 | 2020-06-02 | 中科院微电子研究所昆山分所 | Wafer bonding pressurizing device, wafer bonding method and wafer bonding equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933096B (en) * | 2005-09-14 | 2010-04-21 | 中国科学院半导体研究所 | Low-temperature chip direct bonding method |
| CN102110594B (en) * | 2010-12-20 | 2012-07-25 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on GaAs and Si |
-
2013
- 2013-03-29 CN CN201310109012.3A patent/CN103199156B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987523A (en) * | 2017-06-05 | 2018-12-11 | 北京弘芯科技有限公司 | Infrared focal plane detector and preparation method thereof |
| CN111223810A (en) * | 2018-11-27 | 2020-06-02 | 中科院微电子研究所昆山分所 | Wafer bonding pressurizing device, wafer bonding method and wafer bonding equipment |
| CN109683354A (en) * | 2019-01-15 | 2019-04-26 | 中国科学院半导体研究所 | A kind of middle infrared band modulator and preparation method thereof |
| CN111063609A (en) * | 2019-12-18 | 2020-04-24 | 武汉百臻半导体科技有限公司 | Semiconductor chip cleaning method |
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