CN103196567A - Diode infrared detector and reading circuit thereof - Google Patents
Diode infrared detector and reading circuit thereof Download PDFInfo
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- CN103196567A CN103196567A CN2013101301232A CN201310130123A CN103196567A CN 103196567 A CN103196567 A CN 103196567A CN 2013101301232 A CN2013101301232 A CN 2013101301232A CN 201310130123 A CN201310130123 A CN 201310130123A CN 103196567 A CN103196567 A CN 103196567A
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Abstract
The invention provides a diode infrared detector and a reading circuit thereof. The diode infrared detector and the reading circuit comprise the diode infrared detector, a metal oxide semiconductor (MOS) transistor, a modulation switching circuit, an amplifier, a demodulation switching circuit, a first voltage reduction stabilizer and a second voltage reduction stabilizer, wherein the diode infrared detector is composed of six infrared detection diodes which are connected in series, the MOS transistor is used for current sink, the modulation switching circuit is used for modulating signals of the detector, the amplifier is used for amplifying the signals, the demodulation switching circuit is used for demodulating the signals, the first voltage reduction stabilizer is used for providing positive power supply for the amplifier, and the second voltage reduction stabilizer is used for providing negative power supply for the amplifier. Infrared signals after noise reduction and detuning elimination are output by an output end of the demodulation switching circuit, the two stabilizers provide the positive power supply and the negative power supply for the amplifier, so that integration of the reading circuit and the diode infrared detector is achieved. The diode infrared detector and the reading circuit are simple in structure, capable of eliminating offset voltage and low-frequency noise and improving the integration level and the signal to noise ratio of a system, wide in application range, safe and reliable.
Description
Technical field
The present invention relates to a kind of diode infrared eye and sensing circuit thereof, belong to microelectronics and photoelectron technology field.
Background technology
Infrared detection technique is just obtaining increasingly extensive application in military affairs, space technology, medical science and national economy association area.Infrared detecting chip is the core component that obtains infrared signal in the infrared detection technique.These parts are made up of infrared eye and sensing circuit (ROIC:readout integrated circuits).The basic function of ROIC circuit is to carry out the conversion of infrared eye signal, amplification and transmission.Sensing circuit is the interface circuit of infrared eye and follow-up analog to digital converter (ADC:analog to digital convertor), and its performance quality directly influences the performance of whole infrared detecting chip.
Along with the continuous expansion of range of application, also more and more higher to the infrared detection system performance demands.The diode infrared eye because simple in structure, area is little, highly sensitive, obtained great development.In order to obtain good performance, the diode infrared eye is composed in series by 6～7 diodes usually.A plurality of diodes of connecting can obtain good performance, but have improved forward voltage, and the design of sensing circuit is had higher requirement.The conduction voltage drop of each silicon diode is 0.7V, and the conduction voltage drop of 6 series connection diodes is 4.2V, is the CMOS sensing circuit of 3.3V or 5V for supply voltage, must adopt block isolating circuit to handle.Yet block isolating circuit had both limited the bandwidth of sensing circuit, had increased the area of sensing circuit again greatly because of use passive capacitive and resistance.
In order to reduce the area for diode infrared eye sensing circuit, the Mitsubishi of Japan has proposed with grid modulation circuit sensing circuit to avoid the use of block isolating circuit, (Masafumi Kimata et al. as shown in Figure 1, " SOI diode uncooled infrared plane arrays ", Quantum sensing and Nanophotonic Devices
, Proc. of SPIE Vol.6127,61270
, 2006).This grid modulation electric routing sensor dc bias circuit 1, grid modulation metal-oxide-semiconductor 2, integrating capacitor 3 and MOS switch 4 connect to form by lead.The circuit form of this structure is simple, is easy to the integrated of large scale array.Problems such as but it exists direct current biasing excessive, makes integrating capacitor saturated easily, and dynamic range is limited.
Adopt the diode infrared eye sensing circuit bandwidth of block isolating circuit to be restricted, and area is big.Though the grid modulation circuit of Mitsubishi has overcome the problem of bandwidth and area, exist integrating capacitor easily saturated, the problem that dynamic range is limited.No matter be the traditional sensing circuit that adopts block isolating circuit, or the grid modulation circuit of Mitsubishi, all do not eliminate the function of circuit low-frequency noise, this has also limited the further lifting of infrared detection system performance.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of diode infrared eye and sensing circuit thereof are provided, it can effectively overcome the big problem of diode detector conduction voltage drop, eliminate offset voltage and low-frequency noise, the integrated level of raising system and signal to noise ratio (S/N ratio), dynamic range is big, and is safe and reliable.The technical solution used in the present invention is:
According to technical scheme provided by the invention, described diode infrared eye and sensing circuit thereof, comprise the diode infrared eye of being formed by the infrared detection diode of a plurality of series connection, as the heavy MOS transistor of electric current, the modulation switch circuit that is used for the modulation detector signal for the amplifier of amplifying signal, is used for the demodulation on-off circuit of restituted signal, be used for providing the first lowering and stabilizing blood pressure device of positive supply to amplifier, be used for providing the second lowering and stabilizing blood pressure device of negative supply to amplifier.
Described diode infrared eye is made up of the infrared detection diode of 6 series connection, and with the sensitivity of increase to infrared signal, and substrate is carried out hollow out to realize the heat isolation below infrared detection diode.
Described is the cascode structure that single NMOS pipe or the stack of two NMOS pipes are formed as the heavy MOS transistor of electric current.
Described modulation switch reconciliation circuit tune switch circuit all is chopping switch circuit, respectively comprises 4 cmos switches.Each cmos switch is the cmos switch that adopts current minimum process to make.
Described amplifier should be difference input, single-ended output amplifier, and between the output terminal of amplifier and input end, feedback resistance is set according to required gain.
Described is low pressure difference linear voltage regulator for amplifier provides the first lowering and stabilizing blood pressure device of positive supply.
Described is the switching mode linear voltage regulator for amplifier provides the second lowering and stabilizing blood pressure device of negative supply.
Advantage of the present invention: infrared signal is converted to electric signal through the infrared detection diode of 6 series connection, by eliminating offset voltage and low-frequency noise behind the chopping modulation high-frequency signal, through amplifier faint detector signal is amplified, through the solution tune switch signal is modulated back fundamental frequency then and export, realize reading of infrared signal; Simple in structure, eliminate offset voltage and low-frequency noise, improve integrated level and the signal to noise ratio (S/N ratio) of system, and by two voltage stabilizers sensing circuit and detector are carried out integrated, wide accommodation, safe and reliable.
Description of drawings
Fig. 1 is that Mitsubishi is based on diode infrared eye and the sensing circuit schematic diagram thereof of grid modulated structure.
Fig. 2 is the schematic diagram of diode infrared eye of the present invention and sensing circuit thereof.
Fig. 3 is the schematic diagram of modulation switch circuit of the present invention.
Fig. 4 is the schematic diagram of demodulation on-off circuit of the present invention.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
A kind of diode infrared eye and sensing circuit thereof, comprise the diode infrared eye of being formed by the infrared detection diode of a plurality of series connection 11, as the heavy MOS transistor 12 of electric current, the modulation switch circuit 13 that is used for the modulation detector signal, the amplifier 15 that is used for amplifying signal, the demodulation on-off circuit 14 that is used for restituted signal for the first lowering and stabilizing blood pressure device 16 that positive supply is provided to amplifier 15, is used for providing the second lowering and stabilizing blood pressure device 17 of negative supply to amplifier 15.
Concrete circuit connects as shown in Figure 2:
The anode of described diode infrared eye 11 links to each other with the supply voltage of 8.4v, negative terminal links to each other with the drain terminal of the MOS transistor 12 of sinking as electric current and the input end of modulation switch circuit 13, grid end as the heavy MOS transistor 12 of electric current links to each other source end ground connection with adjusting level Vc; The output terminal of modulation switch circuit 13 connects the input end of amplifier 15, the output terminal of amplifier 15 links to each other with the input end of demodulation on-off circuit 14, provide the input end of the first lowering and stabilizing blood pressure device 16 of positive supply to link to each other with the supply voltage of 8.4v for amplifier 15, output terminal links to each other with the positive power source terminal of amplifier 15; Provide the input end of the second lowering and stabilizing blood pressure device 17 of negative supply to link to each other with the supply voltage of 8.4v for amplifier 15, output terminal links to each other with the negative power end of amplifier 15.
Described diode infrared eye 11 is made up of the infrared detection diode of 6 series connection.With the sensitivity of increase to infrared signal, and substrate adopts XeF to carry out hollow out release below infrared detection diode, isolates to realize heat.
Described is the cascode structure that single NMOS pipe or the stack of two NMOS pipes are formed as the heavy MOS transistor 12 of electric current.
Described modulation switch circuit 13 is a chopping switch circuit, specifically comprises 4 cmos switches: first cmos switch 21, second cmos switch 22, the 3rd cmos switch 23, the 4th cmos switch 24; The minimum dimension manufacturing of all adopting current technology to allow forms, to reduce clock feedthrough and the channel charge injection effect that switch is brought.Second cmos switch 22 is connected across between the positive input terminal and positive output end of modulation switch circuit 13; The 4th cmos switch 24 is connected across between the negative input end and negative output terminal of modulation switch circuit 13; First cmos switch 21 is connected across between the positive input terminal and negative output terminal of modulation switch circuit 13; The 3rd cmos switch 23 is connected across between the negative input end and positive output end of modulation switch circuit 13; Second cmos switch 22 and the 4th cmos switch 24 are by clock P1 control, and first cmos switch 21 and the 3rd cmos switch 23 are by clock P2 control, and clock P1 and clock P2 are anti-phase; When P1 was in high level, P2 was in low level, and the positive input terminal of modulation switch circuit 13 links to each other with positive output end, and negative input end links to each other with negative output terminal; When P1 was in low level, P2 was in high level, and the positive input terminal of modulation switch circuit 13 links to each other with negative output terminal, and negative input end links to each other with positive output end.
The structure of described demodulation on-off circuit 14 is the same with modulation switch circuit 13, is a chopping switch circuit, specifically comprises 4 cmos switches: the 5th cmos switch 25, the 6th cmos switch 26, the 7th cmos switch 27, the 8th cmos switch 28; The minimum dimension manufacturing of all adopting current technology to allow forms, to reduce clock feedthrough and the channel charge injection effect that switch is brought.The 6th cmos switch 26 is connected across between the positive input terminal and positive output end of demodulation on-off circuit 14; The 8th cmos switch 28 is connected across between the negative input end and negative output terminal of demodulation on-off circuit 14; The 5th cmos switch 25 is connected across between the positive input terminal and negative output terminal of demodulation on-off circuit 14; The 7th cmos switch 27 is connected across between the negative input end and positive output end of demodulation on-off circuit 14; The 6th cmos switch 26 and the 8th cmos switch 28 are by clock P1 control, and the 5th cmos switch 25 and the 7th cmos switch 27 are by clock P2 control, and clock P1 and clock P2 are anti-phase; When P1 was in high level, P2 was in low level, and the positive input terminal of demodulation on-off circuit 14 links to each other with positive output end, and negative input end links to each other with negative output terminal; When P1 was in low level, P2 was in high level, and the positive input terminal of demodulation on-off circuit 14 links to each other with negative output terminal, and negative input end links to each other with positive output end.
Described amplifier 15 should be difference input, single-ended output amplifier, and between the output terminal of amplifier 15 and input end, feedback resistance is set according to required gain.
Described is low pressure difference linear voltage regulator for amplifier 15 provides the first lowering and stabilizing blood pressure device 16 of positive supply.Described is the switching mode linear voltage regulator for amplifier 15 provides the second lowering and stabilizing blood pressure device 17 of negative supply.
Claims (8)
1. a diode infrared eye and sensing circuit thereof, it is characterized in that: comprise the diode infrared eye of being formed by the infrared detection diode of a plurality of series connection (11), as the heavy MOS transistor (12) of electric current, the modulation switch circuit (13) that is used for the modulation detector signal, the amplifier (15) that is used for amplifying signal, the demodulation on-off circuit (14) that is used for restituted signal, be used for providing the first lowering and stabilizing blood pressure device (16) of positive supply to amplifier (15), be used for providing the second lowering and stabilizing blood pressure device (17) of negative supply to amplifier (15);
The anode of described diode infrared eye (11) links to each other with supply voltage, and negative terminal links to each other with the drain terminal of the MOS transistor (12) of sinking as electric current and the input end of modulation switch circuit (13); Grid end as the heavy MOS transistor (12) of electric current links to each other source end ground connection with adjusting level Vc; The output terminal of modulation switch circuit (13) connects the input end of amplifier (15), the output terminal of amplifier (15) links to each other with the input end of demodulation on-off circuit (14), link to each other with supply voltage for amplifier (15) provides the input end of the first lowering and stabilizing blood pressure device (16) of positive supply, output terminal links to each other with the positive power source terminal of amplifier (15); Link to each other with supply voltage for amplifier (15) provides the input end of the second lowering and stabilizing blood pressure device (17) of negative supply, output terminal links to each other with the negative power end of amplifier (15).
2. diode infrared eye as claimed in claim 1 and sensing circuit thereof, it is characterized in that: described diode infrared eye (11) is made up of the infrared detection diode of 6 series connection, and substrate is carried out hollow out to realize the heat isolation below infrared detection diode.
3. diode infrared eye as claimed in claim 1 and sensing circuit thereof is characterized in that: described as the heavy cascode structure that MOS transistor (12) is managed for single NMOS or the stack of two NMOS pipes is formed of electric current.
4. diode infrared eye as claimed in claim 1 and sensing circuit thereof, it is characterized in that: described modulation switch circuit (13) is a chopping switch circuit, comprises 4 cmos switches: first cmos switch (21), second cmos switch (22), the 3rd cmos switch (23), the 4th cmos switch (24); Second cmos switch (22) is connected across between the positive input terminal and positive output end of modulation switch circuit (13); The 4th cmos switch (24) is connected across between the negative input end and negative output terminal of modulation switch circuit (13); First cmos switch (21) is connected across between the positive input terminal and negative output terminal of modulation switch circuit (13); The 3rd cmos switch (23) is connected across between the negative input end and positive output end of modulation switch circuit (13); Second cmos switch (22) and the 4th cmos switch (24) are by clock P1 control, and first cmos switch (21) and the 3rd cmos switch (23) are by clock P2 control, and clock P1 and clock P2 are anti-phase.
5. diode infrared eye as claimed in claim 1 and sensing circuit thereof, it is characterized in that: described demodulation on-off circuit (14) is a chopping switch circuit, comprises 4 cmos switches: the 5th cmos switch (25), the 6th cmos switch (26), the 7th cmos switch (27), the 8th cmos switch (28); The 6th cmos switch (26) is connected across between the positive input terminal and positive output end of demodulation on-off circuit (14); The 8th cmos switch (28) is connected across between the negative input end and negative output terminal of demodulation on-off circuit (14); The 5th cmos switch (25) is connected across between the positive input terminal and negative output terminal of demodulation on-off circuit (14); The 7th cmos switch (27) is connected across between the negative input end and positive output end of demodulation on-off circuit (14); The 6th cmos switch (26) and the 8th cmos switch (28) are by clock P1 control, and the 5th cmos switch (25) and the 7th cmos switch (27) are by clock P2 control, and clock P1 and clock P2 are anti-phase.
6. diode infrared eye as claimed in claim 1 and sensing circuit thereof, it is characterized in that: described amplifier (15) is the difference input, single-ended output amplifier, and between the output terminal of amplifier (15) and input end, feedback resistance is set according to required gain.
7. diode infrared eye as claimed in claim 1 and sensing circuit thereof is characterized in that: described is low pressure difference linear voltage regulator for amplifier (15) provides the first lowering and stabilizing blood pressure device (16) of positive supply.
8. diode infrared eye as claimed in claim 1 and sensing circuit thereof is characterized in that: described is the switching mode linear voltage regulator for amplifier (15) provides the second lowering and stabilizing blood pressure device (17) of negative supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101301232A CN103196567A (en) | 2013-04-15 | 2013-04-15 | Diode infrared detector and reading circuit thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101301232A CN103196567A (en) | 2013-04-15 | 2013-04-15 | Diode infrared detector and reading circuit thereof |
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| CN103196567A true CN103196567A (en) | 2013-07-10 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102288299A (en) * | 2011-07-25 | 2011-12-21 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum well photodetector (THzQWP)-based passive thermal imaging detection system and method thereof |
| CN102495351A (en) * | 2011-12-23 | 2012-06-13 | 江苏物联网研究发展中心 | Sensor array readout circuit based on chopper technology |
| CN102680112A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Unit thermistor detector reading-out circuit manufactured in PCB (Printed Circuit Board) circuit manner |
-
2013
- 2013-04-15 CN CN2013101301232A patent/CN103196567A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102288299A (en) * | 2011-07-25 | 2011-12-21 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum well photodetector (THzQWP)-based passive thermal imaging detection system and method thereof |
| CN102495351A (en) * | 2011-12-23 | 2012-06-13 | 江苏物联网研究发展中心 | Sensor array readout circuit based on chopper technology |
| CN102680112A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Unit thermistor detector reading-out circuit manufactured in PCB (Printed Circuit Board) circuit manner |
Non-Patent Citations (1)
| Title |
|---|
| 黄卓磊 等: "基于CMOS数字工艺的低噪声传感器接口电路", 《微电子学》, vol. 42, no. 5, 31 October 2012 (2012-10-31) * |
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Application publication date: 20130710 |