CN103191857B - Method for preparing coatings with high broadband absorptivity at terahertz waveband - Google Patents

Method for preparing coatings with high broadband absorptivity at terahertz waveband Download PDF

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CN103191857B
CN103191857B CN201310119892.2A CN201310119892A CN103191857B CN 103191857 B CN103191857 B CN 103191857B CN 201310119892 A CN201310119892 A CN 201310119892A CN 103191857 B CN103191857 B CN 103191857B
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coating
pitch
carbide particle
silicon
preparation
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CN201310119892.2A
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CN103191857A (en
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邓玉强
孙青�
于靖
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National Institute of Metrology
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National Institute of Metrology
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Abstract

Disclosed is a method for preparing coatings with high broadband absorptivity at terahertz waveband. The method comprises the steps of step one, taking silicon carbide particles and black paint; step two, mixing the silicon carbide particles with the black paint; step three, spraying the mixed silicon carbide particles and the black paint on the surface of a substrate material; and step four, drying the substrate material with the mixed silicon carbide particles and the black paint sprayed to complete preparation. The coating material is simple to prepare, high in absorptivity and broad in absorption band, complete absorption of electromagnetic radiation broadband with the frequency higher than 0.05 THz (corresponding wavelength shorter than 6mm) is achieved through mixing of the silicon carbide particles with the black paint, and the coating can be used for absolute measurement of terahertz waveband radiation intensity and invisibility of targets in the terahertz waveband.

Description

There is the preparation method of broadband high-absorbility coating at terahertz wave band
Technical field
The present invention relates to new material technology field and technology of instrument and meter field, a kind of high-absorbility material at far infrared and terahertz wave band and terahertz emission meter detector target surface material, particularly a kind of preparation method at terahertz wave band with broadband (covering frequence is greater than 0.05THz with super band, and corresponding wavelength is less than 6mm) high-absorbility (absorptivity can up to 99.9%) coating.
Background technology
Terahertz refers to that frequency is positioned at the electromagnetic radiation of 0.1-10THz, the band gap on electromagnetic spectrum between the infrared and electromagnetic millimeter wave of optics.For a long time, effectively produce and measuring technique owing to lacking, Terahertz becomes the mankind in electromagnetic spectrum and needs last window of understanding.Along with the development of optics and electronics technology, all kinds of commercial terahertz emissions source, terahertz detector, terahertz light spectrometer, terahertz imaging instrument continue to bring out.Terahertz Technology has been widely used in the fields such as material composition identification, biological test sample, food security inspection, drug ingredient analysis, prevention from suffering from the diseases examination, astronomical observation and environmental monitoring at present.
But the absolute Measurement of terahertz emission parameter is but for a long time in space state.International THz source and measurement device value cannot be traced to the source, and accuracy of measurement and validity cannot be assessed.2009, the Andreas Steiger of metering institute of country of Germany etc. to low temperature radiometer, realized the magnitude tracing of 2.5THz frequency place terahertz emission degree by terahertz emission magnitude tracing in the world first., because low temperature radiometer absorbing cavity is 7% in the cavity absorptivity uncertainty of terahertz wave band, the synthetic uncertainty finally providing was 7.3% (comprising factor k=1).
2011, the John Lehman of Unite States Standard Institute for Research and Technology etc. reported a kind of orthotropic carbon nano pipe array material.Utilize carbon nano-pipe array that 1.5mm is high to be listed in 0.76THz frequency place and realized 99% absorption.But they have only provided the measurement result at 0.76THz frequency place, Terahertz still cannot solve at the radiant quantity of other frequencies.In addition, CNT complicated process of preparation, growth conditions harshness, heat balance time length and frangible, caused the application of this material to be restricted.
The present invention introduce a kind of prepare simple, low to substrate requirement, can large area, preparation fast, can be sprayed into the coating material of cavity shape structure, absorptivity in (0.1-2.5) THz frequency range reaches more than 99%, absorption wide-band covering frequence is greater than 0.05THz with super band, corresponding wavelength is less than 6mm, is suitable for the absolute Measurement of terahertz emission within the scope of broadband.
Summary of the invention
The object of the invention is to, a kind of preparation method at terahertz wave band with broadband high-absorbility coating is provided, the method has the coating material that preparation is simple, absorptivity is high, absorption band is wide, by hybrid silicon carbide particle and pitch-dark coating, realized the broadband hypersorption that frequency is greater than the electromagnetic radiation of 0.05THz (corresponding wavelength is less than 6mm), this coating can be used for stealthy at terahertz wave band of the absolute measurement of terahertz wave band radiation intensity and target.
The invention provides (need not manage)
The present invention has the following advantages:
(1) absorptivity is high: absorptivity can be up to more than 99.9%.
(2) absorption band is wide: can absorption frequency be greater than the electromagnetic radiation of 0.05THz, corresponding wavelength is less than the electromagnetic radiation of 6mm.
(3) high in visible light wave range absorptivity: in the absorptivity of visible light wave range up to more than 99%.
(4) be convenient to magnitude tracing: the radiometer radiancy value based on this coating can directly be traced to the source to national laser power benchmark.
(5) processing preparation is simple: can direct spraying or be coated at target object surface.
(6) require low to base material: base material can be any solid body, comprise metal, nonmetal, semiconductor or plastics.
(7) require low to shapes of substrates: substrate can be the various shapes such as planar shaped, curved surface shaped or chamber shape.
(8) thermal conductivity is high: coating is conducted heat fast, and the radiometer heat balance time based on this coating is short.
Accompanying drawing explanation
For further illustrating technical characterictic of the present invention, in conjunction with the following drawings, the present invention is done to a detailed description, wherein:
Fig. 1 is preparation method's of the present invention flow chart;
Fig. 2 is the measurement result of utilizing the terahertz wave band broadband high-absorbility coating reflectivity of reflective terahertz light spectrometer measurement.
The specific embodiment
Refer to shown in Fig. 1, the invention provides a kind of preparation method at terahertz wave band with the coating of broadband high-absorbility, comprise the steps:
Step 1: get silicon-carbide particle and pitch-dark coating, the ratio of wherein said silicon-carbide particle is 5%-30%, and the ratio of wherein said pitch-dark coating is 70%-95%.The diameter of described silicon-carbide particle is 1 μ m to 1000 μ m, and described silicon-carbide particle comprises colorless silicon carbide particle, black silicon carbide particle or green silicon carbide particle, or and combination; Described pitch-dark coating comprises the pitch-dark coating of 3M, the pitch-dark coating of carbon nano powder, the pitch-dark coating of EPC-2200, the pitch-dark coating of Chemglaze or the pitch-dark coating of Martin Black, or and combination;
Step 2: silicon-carbide particle and pitch-dark coating are mixed, and stir; Wherein in mixed silicon-carbide particle and pitch-dark coating, be added with curing agent or thermal conducting agent auxiliary material;
Step 3: the surface by mixed silicon-carbide particle and pitch-dark spray painting at base material, described base material is the solid body of any shape, comprise metal, nonmetal, semiconductor, plastics, thermocouple, temperature sensor or pyroelectric detector, described spraying refers to spray gun spraying, spreading, brushing or sputter, or and combination;
Step 4: the base material that is coated with mixed silicon-carbide particle and pitch-dark coating is dried or dried, and described dries for natural drying; Dry as electrical drying, the temperature of electrical drying is 50-200 ℃, completes preparation.
Fig. 2 utilizes the reflective terahertz light spectrometer of independent development to measure coating sample material prepared by the present invention spectral reflectivity under terahertz wave band, wherein heavy line is the measurement result of base material reflectivity, fine dotted line is the system background noise of spectrometer, the lower limit of measuring.As can be seen from the figure the Absorber Bandwidth of mixed coating expands to frequency range (it is following that corresponding wavelength is less than 6mm) more than 0.05THz.The reflectivity that the reflectivity that is about 2%, 0.2-0.5THz at the reflectivity of 0.05-0.2THz is about 0.3%, 0.5-2THz is less than 0.1%.Reflectivity more than 2THz is still very low, consistent with system background noise.This coating spraying is in metallic substrates, and selecting metal is because metal has higher reflectivity at terahertz wave band as the substrate of coating.Terahertz can not penetrating metal, and therefore 1 reflectivity that deducts measurement is the absorptivity of sample at terahertz wave band.Thereby measurement result shows that coating has high absorptivity at terahertz wave band.
We utilize the method for integrating sphere to measure the absorptivity of coating under 633nm He-Ne laser wavelength.Measurement result face coat is 99.021% in the absorptivity of 633nm wavelength.This illustrates that this coating still has fabulous absorption at visible light wave range, therefore, the radiant power value of Terahertz can be traced to the source to laser small-power National primary standard.Utilize the responsiveness value of demarcating under He-Ne Lasers as Terahertz power response metric.
More than explanation is just illustrative for the purpose of the present invention; and nonrestrictive, those of ordinary skills understand, in the case of not departing from the spirit and scope that following claims limit; can make many modifications, variation or equivalence, but all will fall within the scope of protection of the present invention.

Claims (8)

1. a preparation method at terahertz wave band with broadband high-absorbility coating, comprises the steps:
Step 1: get silicon-carbide particle and pitch-dark coating;
Step 2: silicon-carbide particle and pitch-dark coating are mixed, and the ratio of described silicon-carbide particle is 5%-30%, and the ratio of pitch-dark coating is 70%-95%;
Step 3: the surface by mixed silicon-carbide particle and pitch-dark spray painting at base material;
Step 4: the base material that is coated with mixed silicon-carbide particle and pitch-dark coating is dried or dried, complete preparation.
2. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 1, the diameter of wherein said silicon-carbide particle is 1 μ m to 1000 μ m.
3. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 2, wherein said silicon-carbide particle comprises colorless silicon carbide particle, black silicon carbide particle or green silicon carbide particle, or and combination.
4. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 1, wherein said pitch-dark coating comprises the pitch-dark coating of 3M, the pitch-dark coating of carbon nano powder, the pitch-dark coating of EPC-2200, the pitch-dark coating of Chemglaze or the pitch-dark coating of Martin Black, or and combination.
5. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 1, wherein said spraying comprises spray gun spraying, spreading, brushing or sputter, or and combination.
6. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 1, wherein said dry for normal temperature natural drying; Dry as electrical drying, the temperature of electrical drying is 50-200 ℃.
7. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 1 is wherein added with curing agent or thermal conducting agent auxiliary material in mixed silicon-carbide particle and pitch-dark coating.
8. the preparation method at terahertz wave band with broadband high-absorbility coating according to claim 1, wherein said base material is the solid body of any shape, comprises metal, semiconductor, plastics, thermocouple, temperature sensor or pyroelectric detector.
CN201310119892.2A 2013-04-08 2013-04-08 Method for preparing coatings with high broadband absorptivity at terahertz waveband Expired - Fee Related CN103191857B (en)

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CN103868588B (en) * 2014-04-01 2016-01-20 中国计量科学研究院 Absolute type terahertz emission meter
CN104075811B (en) * 2014-05-14 2017-06-23 电子科技大学 TCR high absorbs the THz detecting structures and preparation method of sensitive laminated film
CN107603481A (en) * 2017-08-21 2018-01-19 青岛大学附属医院 A kind of preparation method of medical laser absorbing material
CN109560164B (en) * 2017-09-25 2021-09-03 绵阳瑾源信息技术有限公司 Preparation method of absorption layer of wide-spectrum radiation detector
JP2019081975A (en) * 2017-10-31 2019-05-30 修二 山川 Textile material, and underwear, mask, socks, stockings, brassiere, underpants, muffler, stomach band, gloves and shoe insoles
CN109509988A (en) * 2019-01-07 2019-03-22 中国计量大学 The tapered ultra wide band THz wave absorber of honeycomb
CN113333257A (en) * 2021-06-09 2021-09-03 中国电子科技集团公司第四十一研究所 Preparation method of terahertz blackbody radiation surface

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