CN109509988A - The tapered ultra wide band THz wave absorber of honeycomb - Google Patents
The tapered ultra wide band THz wave absorber of honeycomb Download PDFInfo
- Publication number
- CN109509988A CN109509988A CN201910011869.9A CN201910011869A CN109509988A CN 109509988 A CN109509988 A CN 109509988A CN 201910011869 A CN201910011869 A CN 201910011869A CN 109509988 A CN109509988 A CN 109509988A
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- CN
- China
- Prior art keywords
- thz wave
- honeycomb
- hexagonal pyramid
- ultra wide
- wide band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
Abstract
The invention discloses a kind of tapered ultra wide band THz wave absorbers of honeycomb.It is in 0.2THz-2THz frequency band internal absorption factor 90% or more, it includes multiple THz wave absorptive units in the arrangement of honeycomb building, and each absorptive unit includes bottom metal layer, interior metal hexagonal pyramid and external skin;Wherein metal hexagonal pyramid is located on metal back layer, and external skin is closely coated on metal hexagonal pyramid, and positive hexagonal pyramid structure is presented in external skin in entire THz wave absorptive unit.The present invention has the advantages that simple and compact for structure, size is small, and ultra wide band is absorbed and easily realized.
Description
Technical field
The present invention relates to a kind of absorber more particularly to a kind of tapered ultra wide band THz wave absorbers of honeycomb.
Background technique
Terahertz emission refers to wavelength in 30 μm ~ 3mm, a kind of wave of the frequency in the section 0.1 ~ 10THz.With low energy,
The features such as high-penetration, fingerprint spectrality, broadband property, transient state and coherence, research field is related to imaging, radar, communication, biology
Medicine, anti-terrorism and safety check, aerospace etc..THz wave is the crossing domain of macroelectronics Yu microcosmic photonics research, right
It is merged with the mutual reference of photonics research and mutually with important scientific meaning and great researching value in electronics.
As device indispensable in Terahertz application technology, the research dynamics for increasing absorber is beneficial to absorber
The development of Terahertz Technology.And it is generally existing in existing absorber structure is complicated, absorption efficiency is low and absorption band width etc. lacks
Point.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of tapered ultra wide band THz wave absorbers of honeycomb.
Technical scheme is as follows:
A kind of tapered ultra wide band THz wave absorber of honeycomb, it in 0.2THz-2THz frequency band internal absorption factor 90% or more,
It includes multiple THz wave absorptive units in the arrangement of honeycomb building, and each absorptive unit includes bottom metal layer, interior metal
Hexagonal pyramid and external skin;Wherein metal hexagonal pyramid is located on metal back layer, and external skin is closely coated on metal hexagonal pyramid,
Positive hexagonal pyramid structure is presented in external skin in entire THz wave absorptive unit.
The present invention has the advantages that simple and compact for structure, size is small, and ultra wide band is absorbed and easily realized.
Detailed description of the invention
Fig. 1 a and Fig. 1 b are the CST three-dimensional modeling figures of the tapered ultra wide band THz wave absorber of honeycomb;
Fig. 2 is the three dimensional structure diagram of the tapered ultra wide band THz wave absorber of honeycomb;
Fig. 3 is the bottom surface structure schematic diagram of the tapered ultra wide band THz wave absorber of honeycomb;
Fig. 4 a and Fig. 4 b are the sectional views of the tapered ultra wide band THz wave absorber of honeycomb;
Fig. 5 is the absorption curve figure of the tapered ultra wide band THz wave absorber of honeycomb.
Specific embodiment
As shown in Fig. 1 a, Fig. 1 b, Fig. 2, Fig. 3 and Fig. 4, the tapered ultra wide band THz wave absorber of honeycomb has multiple Terahertzs
Wave absorptive unit, each THz wave absorptive unit include bottom metal layer 1, the positive hexagonal pyramid 2 of interior metal and external skin 3;
Wherein metal layer is located at the bottom, and the positive hexagonal pyramid of metal is located on metal back layer, and external skin is closely coated in positive six rib of metal
On cone.
Size of the structure after electromagnetic simulation software CST optimization is as follows: the material of bottom metal layer is aluminium, conductivity
It is 3.56 × 107S/m, side length is 200 μm, with a thickness of 200 μm.The material of the positive hexagonal pyramid of interior metal is aluminium, conductivity
It is 3.56 × 107S/m, bottom surface hexagonal side length are 200 μm, a height of 600 μm of positive hexagonal pyramid.The material of the external skin
To be pitch-dark, coating shape is the combination of regular hexagonal prism and positive hexagonal pyramid, and it is highly 200 μ that wherein regular hexagonal prism side length, which is 200 μm,
m;Positive hexagonal pyramid bottom surface side length is 200 μm, a height of 600 μm of positive hexagonal pyramid.Pitch-dark coating is closely coated in the positive hexagonal pyramid of metal
On, pitch-dark coating bottom surface between bottom metal layer bottom surface at a distance from be 200 μm.Pitch-dark part and the composite entity of metal part are
Periodic structure.
The absorbance curves figure emulated by CST is as shown in Figure 5.As seen from the figure, in 0.2THz-2THz frequency band
Interior, absorber absorptivity realizes ultra wide band absorption characteristic 90% or more, and in 1THz-1.7THz frequency band, absorptivity exists
98% or more, it can be rated as perfect absorption.
Claims (6)
1. the tapered ultra wide band THz wave absorber of honeycomb, it is characterised in that: its absorptivity in 0.2THz-2THz frequency band
90% or more, it includes multiple THz wave absorptive units in the arrangement of honeycomb building, and each absorptive unit includes underlying metal
Layer, interior metal hexagonal pyramid and external skin;Wherein metal hexagonal pyramid is located on metal back layer, and external skin is closely coated in gold
Belong on hexagonal pyramid, positive hexagonal pyramid structure is presented in external skin in entire THz wave absorptive unit.
2. the tapered ultra wide band THz wave absorber of honeycomb as described in claim 1, it is characterised in that: the underlying metal
The material of layer is aluminium, and conductivity is 3.56 × 107S/m, bottom metal layer are in regular hexagonal prism structure, and side length is 200 μm, are highly
200μm。
3. the tapered ultra wide band THz wave absorber of honeycomb as claimed in claim 2, it is characterised in that: the interior metal
In positive hexagonal pyramid structure, material is aluminium, and conductivity is 3.56 × 107S/m, six shape side length of bottom surface are 200 μm, positive hexagonal pyramid
A height of 600 μm.
4. the tapered ultra wide band THz wave absorber of honeycomb as claimed in claim 3, it is characterised in that: the external skin
Material be it is pitch-dark, coating shape be regular hexagonal prism and positive hexagonal pyramid combination, wherein regular hexagonal prism side length be 200 μm, highly
It is 200 μm;Positive hexagonal pyramid bottom surface side length is 200 μm, a height of 600 μm of positive hexagonal pyramid.
5. the tapered ultra wide band THz wave absorber of honeycomb as claimed in claim 4, it is characterised in that: the pitch-dark coating
Bottom surface between bottom metal layer bottom surface at a distance from be 200 μm.
6. the tapered ultra wide band THz wave absorber of honeycomb as described in claim 1, it is characterised in that: the THz wave absorbs
Device is in 1THz-1.7THz frequency band, and absorptivity is 98% or more.
Priority Applications (1)
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CN201910011869.9A CN109509988A (en) | 2019-01-07 | 2019-01-07 | The tapered ultra wide band THz wave absorber of honeycomb |
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CN201910011869.9A CN109509988A (en) | 2019-01-07 | 2019-01-07 | The tapered ultra wide band THz wave absorber of honeycomb |
Publications (1)
Publication Number | Publication Date |
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CN109509988A true CN109509988A (en) | 2019-03-22 |
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CN201910011869.9A Pending CN109509988A (en) | 2019-01-07 | 2019-01-07 | The tapered ultra wide band THz wave absorber of honeycomb |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111123417A (en) * | 2020-01-13 | 2020-05-08 | 北京航空航天大学 | Terahertz wave stealth device with high efficiency and wide frequency band |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002232229A (en) * | 2001-02-02 | 2002-08-16 | Mitsubishi Cable Ind Ltd | Radio wave absorption structure |
JP2006171229A (en) * | 2004-12-14 | 2006-06-29 | Matsushita Electric Ind Co Ltd | Nonreflective structure and optical element with nonreflective structure, and manufacturing method thereof and mask used for same |
JP2010078544A (en) * | 2008-09-29 | 2010-04-08 | Epson Toyocom Corp | Method for manufacturing liquid cell for terahertz spectroscopic analysis |
CN103191857A (en) * | 2013-04-08 | 2013-07-10 | 中国计量科学研究院 | Method for preparing coatings with high broadband absorptivity at terahertz waveband |
CN105609963A (en) * | 2015-12-24 | 2016-05-25 | 武汉科技大学 | Silicon-based plasma ultra wideband terahertz wave absorber |
-
2019
- 2019-01-07 CN CN201910011869.9A patent/CN109509988A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002232229A (en) * | 2001-02-02 | 2002-08-16 | Mitsubishi Cable Ind Ltd | Radio wave absorption structure |
JP2006171229A (en) * | 2004-12-14 | 2006-06-29 | Matsushita Electric Ind Co Ltd | Nonreflective structure and optical element with nonreflective structure, and manufacturing method thereof and mask used for same |
JP2010078544A (en) * | 2008-09-29 | 2010-04-08 | Epson Toyocom Corp | Method for manufacturing liquid cell for terahertz spectroscopic analysis |
CN103191857A (en) * | 2013-04-08 | 2013-07-10 | 中国计量科学研究院 | Method for preparing coatings with high broadband absorptivity at terahertz waveband |
CN105609963A (en) * | 2015-12-24 | 2016-05-25 | 武汉科技大学 | Silicon-based plasma ultra wideband terahertz wave absorber |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111123417A (en) * | 2020-01-13 | 2020-05-08 | 北京航空航天大学 | Terahertz wave stealth device with high efficiency and wide frequency band |
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