CN103187943A - Radio-frequency filter for electrostatic chuck - Google Patents
Radio-frequency filter for electrostatic chuck Download PDFInfo
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- CN103187943A CN103187943A CN2011104486212A CN201110448621A CN103187943A CN 103187943 A CN103187943 A CN 103187943A CN 2011104486212 A CN2011104486212 A CN 2011104486212A CN 201110448621 A CN201110448621 A CN 201110448621A CN 103187943 A CN103187943 A CN 103187943A
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Abstract
The invention relates to a multifrequency radio-frequency filter for an electrostatic chuck. The electrostatic chuck is mounted in a plasma treatment device and used for fixing a to-be-treated substrate, wherein the plasma treatment device comprises a radio-frequency power supply provided with a plurality of radio frequencies and connected with a plasma generator; the electrostatic chuck comprises a heating electrode; and the radio-frequency filter is connected between the heating electrode of the electrostatic chuck and a heating power supply. The radio-frequency filter is characterized in that the radio-frequency filter comprises an iron-core inductor, an air inductor and a filter capacitor. A resonant frequency of the filter greater than a to-be-filtered frequency is selected as the resonant frequency of the filter. The radio-frequency filter with the structure can achieve more efficient filtering with a smaller size.
Description
Technical field
The present invention relates to a kind of radio-frequency filter, particularly a kind of radio-frequency filter that is connected with the electrostatic chuck of plasma processing apparatus.
Background technology
In the manufacture process of semiconductor device, in order to carry out PROCESS FOR TREATMENT such as deposit, etching at the semiconductor wafer as substrate, generally produce electrostatic attraction by electrostatic chuck (Electrostatic chuck is called for short ESC) and come sticking to fix and supporting wafers.
As shown in Figure 1, electrostatic chuck 200 is arranged on the vacuum treatment chamber bottom as plasma processing apparatus usually, be connected with radio frequency power source 400 as bottom electrode, and between the top electrode at vacuum treatment chamber top and this bottom electrode, form rf electric field, the electronics that accelerated by electric field etc. is collided with the reactant gas molecules generation ionization that feeds treatment chamber, and the plasma and the wafer that produce reacting gas react.By regulating this radio frequency power source 400 that is connected with the pedestal of electrostatic chuck 200, the density of the plasma that control generates.
Wafer is placed on the dielectric layer 210 of electrostatic chuck 200 tops, highly heat-conductive carbon/ceramic ceramic material, by in dielectric layer 210, burying the sticking power supply that some electrodes 310 also apply direct current respectively underground, make between wafer and dielectric layer 210 and produce electrostatic attraction, wafer is adsorbed on the electrostatic chuck 200 firmly.In dielectric layer 210, generally also be provided with some heating elements 320, by heating dielectric layer 210, heat evenly be passed to wafer, the temperature during the control processing of wafers.
Usually need be on the detection signal 302 that is applied to the temperature control power supply of each heating element 320 (heater power) 301 and temperature sensor thereof, radio-frequency filter 100 is set respectively carries out filtering, make its output can not cause interference to above-mentioned radio frequency power source 400.Yet modern technologies are controlled the different qualities of plasma process through a plurality of radio-frequency power supplies commonly used, such as producing plasma with high-frequency radio frequency source such as 40Mhz, 60Mhz or higher frequency.Radio frequency such as the 2Mhz of the radio-frequency power supply of lower frequency (less than 10Mhz) control the energy that plasma incides substrate surface.The filter that is connected to heater so just need be designed to be able to two very big radio-frequency (RF) energy of difference of filtering, otherwise these radio-frequency powers can flow backwards along heater circuit, damages the circuit that is used for to the electrostatic chuck heating.For the such frequency of filtering, prior art is usually with the air-core inductance of a plurality of series connection and the filter circuit of electric capacity formation.Though also can obtain to have the circuit of required resonance frequency with the air-core inductance, but because the sensibility reciprocal of air-core inductance is very little, obtaining just needs the hundreds of circles of coiling even more coil corresponding to 2M or more low-frequency radio-frequency (RF) energy, not only bulky but also manufacturing cost is high.If adopt less air-core point to feel then the numerical value of inductance value does not reach requirement again, 2 power supplys that frequency distance is very big of the coupling incident that such structure can't be intact cause final filter effect not good.
Summary of the invention
The purpose of this invention is to provide a kind of radio-frequency filter for electrostatic chuck, described electrostatic chuck is installed in and is used for fixing pending substrate in the plasma treatment appts, described plasma treatment appts comprises that the radio-frequency power supply with a plurality of rf frequencies is connected to plasma generator, comprise a heating electrode in the described electrostatic chuck, radio-frequency filter is connected between described electrostatic chuck heating electrode and the heating power supply, it is characterized in that described radio-frequency filter comprises an iron inductance and an air inductance and an electric capacity.Heating power supply can be the power frequency of input or the heating voltage of direct current.
The heating element that arranges in the electrostatic chuck can be a plurality of and each corresponding different heating region, and these several heating original paper is electrically connected to heating power supply by a plurality of filters.
Filter comprises air inductance of mutual series connection and the power input that iron inductance is electrically connected to described heating power supply, and a filter capacitor is connected between described power input and the earth point.
Wherein has a radio-frequency power supply high-frequency radio frequency voltage to frequency of output of a plurality of rf frequencies and the voltage of a low frequency radio frequency frequency, the resonant circuit that described filter hollow pneumoelectric sense and filter capacitor form has first resonance frequency greater than described high-frequency radio frequency frequency; The resonant circuit that iron inductance and filter capacitor form in the described filter has second resonance frequency greater than described low frequency radio frequency frequency and less than described high-frequency radio frequency frequency.First resonance frequency can be can be greater than described low frequency radio frequency frequency 50% greater than described high-frequency radio frequency frequency 15%, the second resonance frequency.
Wherein said high-frequency radio frequency frequency is greater than 40Mhz, and the low frequency radio frequency frequency is lower than 20Mhz.Iron inductance has the impedance greater than 1 kilohm when input low frequency radio frequency frequency.
The resonant circuit that air-core inductance and iron inductance are combined to form can not only be fit to the radio system that frequency differs greatly, and has the little low cost and other advantages of volume.Because the employing of iron core makes inductance value be easy to just obtain improve, and has higher adaptability, can tackle the radio system of different frequency.The present invention not only can be used for the heating current limliting filtering of electrostatic chuck, and can be used for also that the plasma reaction chamber is any need be to multifrequency occasion on a large scale.Such as the hvdc transmission line that static is provided in electrostatic chuck, perhaps be used for some probes that the signal of telecommunication in the reaction chamber is surveyed, need the very big radiofrequency signal of some big frequency differences of filtering, these occasions or parts can adopt the present invention to realize efficient filtering to wide range of frequencies.So so long as be placed in the reaction chamber conductor can with a plurality of rf frequencies couplings, and this conductor is connected with external drive circuit and needs these High-frequency Interference of filtering, can adopt structure of the present invention.
Shape together; Similarly, in the package parts of multilayer winding construction, correspondence wears the channel position of multiple conducting wires and fixes, make a plurality of inductor filter coil shapes of formation also identical, thereby can obtain consistent filter effect at a plurality of inductor filter coils, also reduce the possibility that electric arc takes place, improved the reliability of electrostatic chuck work.
Description of drawings
Fig. 1 is the general structure schematic diagram of the radio-frequency filter of existing electrostatic chuck.
Fig. 2 is according to the general structure schematic diagram that is used for the radio-frequency filter of electrostatic chuck in the specific embodiment of the present invention.
Embodiment
Below in conjunction with description of drawings the specific embodiment of the present invention.
Cooperation provides a kind of multichannel radio-frequency filter 100 for electrostatic chuck referring to shown in Figure 2 in the present embodiment.Picture 2 has shown an electrostatic chuck heating system with a plurality of thermals treatment zone, and the electrostatic chuck thermal treatment zone comprises the center, and mesozone and marginal zone are connected to 3 power supplys that can independently control output AC power by 3 filter circuits respectively.The AC power of heating usefulness can be (50hz) of power frequency, also can be direct current, as long as the heater that can heat in the electrostatic chuck is just passable.Filter circuit comprises inductance L 1, L2, the L3 of 3 series connection, L2 wherein, and L3 has comprised an iron core, L1 is air-core.Electrostatic chuck heater of the present invention also can be to have only a thermal treatment zone or more than three thermals treatment zone, 3 thermals treatment zone only are example shown in the figure.The inductance of connecting with heater in each thermal treatment zone also can have only 2, is made up of an air-core inductance and an iron inductance.Series inductance is connected to earth point by electric capacity, will flow into the radio-frequency power filtering of heater circuit.
The present invention is applied to plasma treatment appts, and plasma treatment appts comprises plasma generator, is connected to behind a plurality of radio-frequency power supplies the formation plasma that dissociates of the gas in the reaction chamber.Plasma generator can be the reactor of capacitive coupling type, applies rf electric field between upper/lower electrode, and wherein electrostatic chuck is positioned at bottom electrode among the present invention, can be subjected to the influence of a plurality of radio frequencies.Plasma generator also can be the inductance coupling high type, and the rf electric field that the coil of reaction chamber outside produces passes the insulating barrier window and enters reaction chamber, and part power also can enter the bottom electrode that pending substrate is installed.The reaction chamber of other many radio-frequency power supplies such as ECR etc. also are suitable for structure of the present invention.
The inductance that designs an air-core inductance of mutual series connection and a ribbon core by the present invention adapts to the rf frequency from several megahertzes to dozens or even hundreds of hertz that the present invention wants filtering.
The air-core inductance is designed to limit high-frequency radio frequency voltage, the common 40Mhz that all is higher than, and such as 40Mhz, 60Mhz, 80Mhz, the radio-frequency voltage of 120Mhz or 160Mhz.
Iron inductance is the radio-frequency voltage that is designed to limit medium and low frequency, particularly is lower than 27Mhz, such as 27Mhz, and 13.56Mhz, 2Mhz, the radio-frequency voltage of 1Mhz or 400Khz.
The radio-frequency filter that both combinations can obtain a multifrequency comes a plurality of radio-frequency voltages of filtering simultaneously.Filter of the present invention is at double frequency, and is very effective on the semiconductor equipment of three frequencies or other multifrequency.
For the effective attenuation radiofrequency signal, each radio frequency inductive is designed to have resonance frequency greater than will be by the frequency of the radio-frequency voltage of filtering.The impedance meeting of a resonant circuit increases along with the increase of input radio frequency signal frequency concerning high-frequency radio frequency voltage, impedance maximum when reaching resonance point, but the signal of relative this frequency of resonant circuit begins to show capacitive again when frequency surpasses resonance point, so impedance begins again to dwindle.The resonance frequency that the resonant circuit parameters selection that inductance of the present invention and electric capacity are formed has resonant circuit is higher than the radio-frequency power that needs filtering.Make that like this group of frequencies Chengdu of any input is in the higher zone of impedance in the work of plasma reaction chamber.Radio-frequency power supply comes out after entering the plasma reaction chamber outside the frequency of radio-frequency power supply input own, also can produce the harmonic wave of a lot of high frequencies in various impedances and reflection, can produce as 4Mhz the harmonic wave of 8Mhz etc. such as the first-harmonic of 2Mhz.The part of these harmonic waves also can be had the filter of upper resonance frequency to being filtered out like this.The present invention is that can selecting for use of 60Mhz has resonance frequency inductance greater than 70Mhz, impedance greater than 1 kilohm circuit to the radiofrequency signal of wanting filtering in the selection of filter circuit resonance frequency.Corresponding want filtering can select the circuit greater than 1.1 kilohms resonance frequency more than or equal to 20Mhz, impedance for use for the signal of 13.56Mhz.For wanting can selecting for use for the radiofrequency signal of 2Mhz of filtering to have greater than 5Mhz resonance frequency, the impedance resonant circuit greater than 1.4 kilohms.
Adopt the filter circuit experimental result of structure of the present invention:
When low-frequency range power was 2000W, attenuation amplitude was greater than 20 decibels (2.26KV input voltage, 21V output voltages); 34.5-43.3 ℃ of iron core temperature, test in 30 minutes
When high band power was 1000W, attenuation amplitude was greater than 17 decibels (200V input voltage, 4V output voltages);
In sum, the multichannel radio-frequency filter for electrostatic chuck of the present invention, the resonant circuit that air-core inductance and iron inductance are combined to form can not only be fit to the radio system that frequency differs greatly, and has the little low cost and other advantages of volume.Because the employing of iron core makes inductance value be easy to just obtain improve, and has higher adaptability, can tackle the radio system of different frequency.The present invention not only can be used for the heating current limliting filtering of electrostatic chuck, and can be used for also that the plasma reaction chamber is any need be to multifrequency occasion on a large scale.Such as the hvdc transmission line that static is provided in electrostatic chuck, perhaps be used for some probes that the signal of telecommunication in the reaction chamber is surveyed, also need the very big radiofrequency signal of some big frequency differences of filtering, these occasions or parts can adopt the present invention to realize efficient filtering to wide range of frequencies.So so long as be placed in the reaction chamber conductor can with a plurality of rf frequencies couplings, and this conductor is connected with external drive circuit and needs these High-frequency Interference of filtering, can adopt structure of the present invention.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. radio-frequency filter that is used for electrostatic chuck, described electrostatic chuck is installed in and is used for fixing pending substrate in the plasma treatment appts, and described plasma treatment appts comprises that the radio-frequency power supply with a plurality of rf frequencies is connected to plasma generator,
Described electrostatic chuck comprises a heating electrode, and radio-frequency filter is connected between described electrostatic chuck heating electrode and the heating power supply,
It is characterized in that described radio-frequency filter comprises an iron inductance and an air inductance and a filter capacitor.
2. be used for the radio-frequency filter of electrostatic chuck according to claim 1, it is characterized in that, be provided with the corresponding different zone of some heating elements in the described electrostatic chuck, described several heating original papers are electrically connected to heating power supply by a plurality of filters.
3. the radio-frequency filter that is used for electrostatic chuck according to claim 1, it is characterized in that, described filter comprises air inductance of mutual series connection and the power input that iron inductance is electrically connected to described heating power supply, and a filter capacitor is connected between described power input and the earth point.
4. be used for the radio-frequency filter of electrostatic chuck according to claim 1, it is characterized in that, the heating voltage of described heating power supply input input power frequency or direct current.
5. be used for the radio-frequency filter of electrostatic chuck according to claim 1, it is characterized in that, described radio-frequency power supply with a plurality of rf frequencies is exported the voltage of a high-frequency radio frequency frequency and the voltage of a low frequency radio frequency frequency,
The resonant circuit that described filter hollow pneumoelectric sense and filter capacitor form has first resonance frequency greater than described high-frequency radio frequency frequency;
The resonant circuit that iron inductance and filter capacitor form in the described filter has second resonance frequency greater than the frequency of described low frequency radio frequency and less than described high-frequency radio frequency frequency.
As described in the claim 5 for the radio-frequency filter of electrostatic chuck, it is characterized in that described first resonance frequency is greater than described high-frequency radio frequency frequency 15%.
As described in the claim 5 for the radio-frequency filter of electrostatic chuck, it is characterized in that described second resonance frequency is greater than described low frequency radio frequency frequency 50%.
As described in the claim 5 for the radio-frequency filter of electrostatic chuck, it is characterized in that described high-frequency radio frequency frequency is greater than 40Mhz, the low frequency radio frequency frequency is lower than 20Mhz.
As described in the claim 5 for the radio-frequency filter of electrostatic chuck, it is characterized in that described iron inductance has the impedance greater than 1 kilohm when input low frequency radio frequency frequency.
10. radio-frequency filter that is used for plasma treatment appts, described plasma treatment appts comprises a reaction chamber, radio-frequency power supply with a plurality of rf frequencies is connected to plasma generator, described radio-frequency power supply with a plurality of rf frequencies is exported the voltage of a high-frequency radio frequency frequency and the voltage of a low frequency radio frequency frequency, wherein the high-frequency radio frequency frequency is greater than 40Mhz, and the low frequency radio frequency frequency is less than 20Mhz;
An electrode is positioned at reaction chamber and described a plurality of rf frequency coupling, and described electrode has external drive circuit UNICOM;
A filter is connected between described electrode and the drive circuit;
It is characterized in that described radio-frequency filter comprises an iron inductance and an air inductance and a filter capacitor.
11. according to the described radio-frequency filter for plasma treatment appts of claim 1, described filter comprises iron inductance and air inductance of two series connection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448621.2A CN103187943B (en) | 2011-12-28 | 2011-12-28 | Radio-frequency filter for electrostatic chuck |
| TW101143728A TW201342508A (en) | 2011-12-28 | 2012-11-22 | Radio frequency filter for electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448621.2A CN103187943B (en) | 2011-12-28 | 2011-12-28 | Radio-frequency filter for electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103187943A true CN103187943A (en) | 2013-07-03 |
| CN103187943B CN103187943B (en) | 2017-02-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110448621.2A Active CN103187943B (en) | 2011-12-28 | 2011-12-28 | Radio-frequency filter for electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187943B (en) |
| TW (1) | TW201342508A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733363A (en) * | 2013-12-19 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Radio frequency filter circuit and electrostatic chuck |
| CN104753486A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Radio frequency filter and semiconductor processing device |
| CN105592674A (en) * | 2014-10-21 | 2016-05-18 | 深圳振华富电子有限公司 | Electromagnetic interference filter |
| CN107026629A (en) * | 2015-10-15 | 2017-08-08 | 朗姆研究公司 | Mutual induction filter |
| CN109326497A (en) * | 2017-07-31 | 2019-02-12 | 朗姆研究公司 | High power cable for the heating element in radio frequency environment |
| CN111211029A (en) * | 2018-11-21 | 2020-05-29 | 中微半导体设备(上海)股份有限公司 | Multi-zone temperature control plasma reactor |
| CN111276381A (en) * | 2018-12-04 | 2020-06-12 | 江苏鲁汶仪器有限公司 | Device and method for adjusting wafer etching uniformity |
| CN111383894A (en) * | 2018-12-29 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma processor and electrostatic chuck heating method |
| CN111385915A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma reactor and heating device thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104637838B (en) * | 2013-11-15 | 2018-06-26 | 中微半导体设备(上海)有限公司 | A kind of semiconductor processing device |
| US9312832B2 (en) * | 2014-07-23 | 2016-04-12 | Lam Research Corporation | High power filter with single adjust for multiple channels |
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| CN101437354A (en) * | 2007-11-14 | 2009-05-20 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TW200405443A (en) * | 2002-06-18 | 2004-04-01 | Anelva Corp | Electrostatic absorbing apparatus |
| CN1581445A (en) * | 2003-08-01 | 2005-02-16 | 东京毅力科创株式会社 | Plasma etching method and plasma treatment apparatus |
| CN101090259A (en) * | 2006-06-13 | 2007-12-19 | 应用材料股份有限公司 | High AC current high RF power ac-rf decoupling filter for plasma reactor heated electrostatic chuck |
| CN101437354A (en) * | 2007-11-14 | 2009-05-20 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733363B (en) * | 2013-12-19 | 2017-07-14 | 中微半导体设备(上海)有限公司 | A kind of radio frequency filter circuit and electrostatic chuck |
| CN104733363A (en) * | 2013-12-19 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Radio frequency filter circuit and electrostatic chuck |
| CN104753486B (en) * | 2013-12-31 | 2019-02-19 | 北京北方华创微电子装备有限公司 | A kind of radio-frequency filter and semiconductor processing equipment |
| CN104753486A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Radio frequency filter and semiconductor processing device |
| CN105592674A (en) * | 2014-10-21 | 2016-05-18 | 深圳振华富电子有限公司 | Electromagnetic interference filter |
| CN105592674B (en) * | 2014-10-21 | 2018-08-28 | 深圳振华富电子有限公司 | Emi filter |
| CN107026629B (en) * | 2015-10-15 | 2020-12-25 | 朗姆研究公司 | Mutual inductance filter |
| CN107026629A (en) * | 2015-10-15 | 2017-08-08 | 朗姆研究公司 | Mutual induction filter |
| CN109326497A (en) * | 2017-07-31 | 2019-02-12 | 朗姆研究公司 | High power cable for the heating element in radio frequency environment |
| CN109326497B (en) * | 2017-07-31 | 2023-11-14 | 朗姆研究公司 | High power cable for heating elements in a radio frequency environment |
| US11837446B2 (en) | 2017-07-31 | 2023-12-05 | Lam Research Corporation | High power cable for heated components in RF environment |
| CN111211029A (en) * | 2018-11-21 | 2020-05-29 | 中微半导体设备(上海)股份有限公司 | Multi-zone temperature control plasma reactor |
| CN111211029B (en) * | 2018-11-21 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Multi-zone temperature-control plasma reactor |
| CN111276381A (en) * | 2018-12-04 | 2020-06-12 | 江苏鲁汶仪器有限公司 | Device and method for adjusting wafer etching uniformity |
| CN111385915A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma reactor and heating device thereof |
| CN111385915B (en) * | 2018-12-27 | 2022-04-26 | 中微半导体设备(上海)股份有限公司 | Plasma reactor and heating device thereof |
| CN111383894A (en) * | 2018-12-29 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma processor and electrostatic chuck heating method |
| CN111383894B (en) * | 2018-12-29 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | Plasma processor and electrostatic chuck heating method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201342508A (en) | 2013-10-16 |
| CN103187943B (en) | 2017-02-08 |
| TWI484579B (en) | 2015-05-11 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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