CN1031773C - Laser of internal reflecting surface emmission with chemical corrosion plane - Google Patents
Laser of internal reflecting surface emmission with chemical corrosion plane Download PDFInfo
- Publication number
- CN1031773C CN1031773C CN 92109085 CN92109085A CN1031773C CN 1031773 C CN1031773 C CN 1031773C CN 92109085 CN92109085 CN 92109085 CN 92109085 A CN92109085 A CN 92109085A CN 1031773 C CN1031773 C CN 1031773C
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- layer
- laser
- emitting laser
- reflecting
- dovetail groove
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Abstract
The present invention relates to a surface emitting semiconductor laser. One reflecting mirror surface of the resonant cavity of the surface emitting semiconductor laser is composed of a plane and a reflecting inclined surface which is formed by a chemical corrosion method; the other mirror surface is a vertical surface which is formed by a cleavage method or an etching method. Horizontal light beams are fully reflected into the light beams which are perpendicular to the direction of a chip surface to penetrate through an upper limiting layer to generate surface emitting light in the resonant cavity by the reflecting inclined surface.
Description
The present invention is a kind of semiconductor surface emitting laser
Surface-emitting laser can be divided into vertical chamber and horizontal cavity two classes by its resonant cavity form.Hard straight resonant-cavity surface emitting laser has lower threshold current and stable advantages such as single longitudinal mode operation.Reflective two kinds of distributed Blatt reflective formula and inclined-plane arranged in horizontal resonant cavity one class, and the former can obtain very narrow far field light beam, but the loss of reflecting grating is big and the preparation difficulty height of grating.Reflective preparation technology is simple on the inclined-plane, and can utilize the manufacturing process and the technology of end emitting laser maturation.The reflective surface-emitting laser in inclined-plane comprises two kinds of reflection type and external reflectance formulas again, and the former reflecting slant is on an end of resonant cavity, and the latter's reflecting slant is beyond resonant cavity.External reflectance formula surface-emitting laser is compared with reflection type and need be added an etching vertical cavity surface, and simultaneously owing to have distance between external reflectance inclined-plane and the vertical cavity surface, so integrated level is restricted.The early stage interior reflective surface ballistic device of making adopts upside-down mounting back side illuminated structure, and reflecting slant is to be formed by the V-type groove side that erodes away in epi-layer surface.Before the heat sink welding, the V-type groove on the tube core wants deposition dielectric film with anticreep, and a window need be opened in the back side that substrate etching is saturating, and double-edged etching tank also will be aimed at, and therefore difficulty greatly.Recently there is new reflection-type surface-emitting laser to be developed out
[1], this technology is and the immediate prior art of the present invention, this laser be a kind of epitaxial surface upwards, welding mutually that substrate and copper are heat sink, light is from the reflective plane emitting laser of epi-layer surface outgoing.It (comprises cap rock by double-heterostructure, upper limiting layer, active layer, lower limit layer, substrate) a horizontal resonant cavity and an end are the reflecting slant (this 45 reflecting slant can reflex to surface emitting with the laser beam of level vibration) of 45, the other end constitutes for the vertical reflection face, and its 45 reflecting slant is to be made of the 45 valley sidewall that reactive ion etching technology is carved into.This requirement on devices has valuable ion etching equipment, and process conditions are strict.
The objective of the invention is to reduce valuable process equipment, the surface-emitting laser of the simple and function admirable of preparation technology.Figure one is the chip structure schematic diagram behind the first step photoetching corrosion.Figure two is a reflection-type surface emitting laser structure schematic diagram.Figure three is a V-type groove substrate laser with internal strips structural representation.Parts among the figure one, two, three: 1. the dovetail groove sidewall at epitaxial surface electrode 2. cap rocks 3. upper limiting layers 4. active layers 5. lower limit layers 6. substrates 7. substrate surface electrodes 8. dovetail grooves 9. about angles at 45 is reflecting slant 10. current barrier layers
The face emitting semiconductor laser of the present invention's preparation, also be that a kind of epitaxial surface makes progress, substrate and the heat sink welding mutually of copper, light is from the reflective plane emitting laser of epi-layer surface outgoing, (comprise cap rock 2 by double-heterostructure, upper limiting layer 3, active layer 4, lower limit layer 5, substrate 6) a horizontal resonant cavity and an end are the 45 reflecting slant, the other end is that the vertical reflection face constitutes, and it is characterized in that the 45 reflecting slant is made of the sidewall 9 that the degree of depth surpasses the dovetail groove 8 of active layer, and dovetail groove 8 and the sidewall 9 that is approximately 45 thereof are to form with chemical corrosion method.
Concrete way is:
The laser of growing on (100) face substrate is comprised the array epitaxial wafer attenuate of wide contact and different units number, two-sided electrode evaporation, make the marking shape window of periodic arrangement by lithography and remove alloy electrode earlier with chemical corrosion method and remove last epitaxial loayer (cap rock 2) again along [110] direction at epitaxial surface then, to eliminate the absorption of this layer to light, finish this step after chip structure shown in figure one.Carve than the narrow window of bar last time and go out dovetail groove 8 with the directional etching corrosion along above-mentioned corrosion slab region intermediate light, the degree of depth is above active layer.Horizontal light beam becomes vertical emergent light by side 9 total reflections of dovetail groove.In the middle of two etching tanks, form a vertical cavity face with cleavage or lithographic method, shown in figure two along the flute length direction.
The manufacture craft of the surface-emitting laser of having implemented;
With V-type groove substrate bar shaped GaAs/GaAlAs laser epitaxial wafer, epitaxial layer structure as shown in Figure 3, be thinned to～100 μ m are thick, the wide contact alloy electrode of two-sided making, along using the AZ1350 photoresist to make the periodic distribution marking shape window of wide 20 μ m, spacing 500 μ m by lithography in epi-layer surface, at first use I perpendicular to V-type flute length direction
2The aqueous solution (8mgI
2+ 5mKI+40mlH
2O
2) erode surface alloying layer 1, use H again
2SO
4: H
2O
2: H
2O (1: 8: 8) erodes GaAs cap rock 2, as shown in Figure 1.Adopt identical lithography corrosion process to form the dovetail groove 8 that 10 μ m are wide, the degree of depth surpasses active layer in the middle of aforementioned groove, figure two is seen as the internal reflection inclined-plane in the side 9 of groove.Be divided into singulated dies along between groove center and two grooves chip cleavage being opened, epitaxial surface up sintering on copper is heat sink.
Above-mentioned reflection type surface-emitting laser is compared with surface-emitting laser in the past and is had the following advantages:
Preparation technology is simple, and cost is low.The level and smooth optical loss of reflecting slant and plane that chemical corrosion method forms is little.Can once erode away two inclined-planes, be convenient to integratedly, see figure two.
Claims (3)
1, a kind of epitaxial surface upwards, substrate and the heat sink welding mutually of copper, light is from the reflective plane emitting laser of epi-layer surface outgoing, by double-heterostructure, comprise cap rock (2), upper limiting layer (3), active (4), lower limit layer (5), lining (6), a horizontal resonant cavity and an end are the 45 reflecting slant, and the other end the invention is characterized in that for the vertical reflection face constitutes the 45 reflecting slant is made of dovetail groove (8) one sidewalls (9) that the degree of depth surpasses active layer.
2, a kind of light is from the process of the reflective plane emitting laser of epi-layer surface outgoing, will make an end of resonant cavity reflecting surface form the inclined-plane of 45 for the laser beam with the level vibration reflexes to surface emitting, the invention is characterized in that this reflecting slant (9) is to form with chemical corrosion method.
3, a kind of process according to the described reflective plane emitting laser of claim 2, feature of the present invention are to adopt H for the GaAs/GaAlAs laser epitaxial layer
2SO
4: H
2O
2: H
2O (1: 8: 8) directional etching liquid goes out the dovetail groove (8) that the degree of depth surpasses active layer along epitaxial wafer [110] direction directional etching, and the sidewall 9 of dovetail groove is directed corrosion and is approximated to 45,
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92109085 CN1031773C (en) | 1992-08-29 | 1992-08-29 | Laser of internal reflecting surface emmission with chemical corrosion plane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92109085 CN1031773C (en) | 1992-08-29 | 1992-08-29 | Laser of internal reflecting surface emmission with chemical corrosion plane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1071536A CN1071536A (en) | 1993-04-28 |
| CN1031773C true CN1031773C (en) | 1996-05-08 |
Family
ID=4943957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92109085 Expired - Fee Related CN1031773C (en) | 1992-08-29 | 1992-08-29 | Laser of internal reflecting surface emmission with chemical corrosion plane |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1031773C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956142A (en) * | 1997-09-25 | 1999-09-21 | Siemens Aktiengesellschaft | Method of end point detection using a sinusoidal interference signal for a wet etch process |
| CN111613967B (en) * | 2020-06-22 | 2021-12-07 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser for emitting coherent laser and manufacturing method thereof |
-
1992
- 1992-08-29 CN CN 92109085 patent/CN1031773C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1071536A (en) | 1993-04-28 |
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