CN103168367B - Dye-sensitized solar cell module having light scattering layer and method for manufacturing same - Google Patents
Dye-sensitized solar cell module having light scattering layer and method for manufacturing same Download PDFInfo
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- CN103168367B CN103168367B CN201180050436.6A CN201180050436A CN103168367B CN 103168367 B CN103168367 B CN 103168367B CN 201180050436 A CN201180050436 A CN 201180050436A CN 103168367 B CN103168367 B CN 103168367B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/209—Light trapping arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a dye-sensitized solar cell module having a light scattering layer and a method for manufacturing the same, in which the light scattering layer having holes formed therein is formed on a working electrode (photoelectrode), thereby ensuring a translucent or transparent state of the dye-sensitized solar cell module and increasing the efficiency of a solar cell.
Description
Technical field
The present invention relates to the DSSC module possessing light scattering layer.More specifically, relating to the DSSC module (Dye-sensitizedsolarcell:DSSC) for work electrode (optoelectronic pole) being formed with light scattering layer (LightScatteringLayer), making DSSC module be maintained DSSC module and the manufacture method thereof of transparent or semitransparent state.
Background technology
After within 1991, being developed dye-sensitive nano particle titanium oxide solar cell by Michael's Glan Ze Er (MichaelGratzel) R&D team of the federal Polytechnics of Lausanne, SUI, carry out a lot of researchs relevant to this field.DSSC is significantly low compared to existing silicon system solar cell manufacturing cost, therefore, there is the possibility that can replace existing uncrystalline silicon solar cell, and, different from silicon system solar cell, DSSC is can generate the dye molecule of electron-hole pair by absorbing light and to transmit the Photoelectrochemistry of transition metal oxide as main composition material of the electronics generated.
Fig. 1 is in order to general DSSC structure and the figure of electricity generating principle are described.
With reference to figure 1, DSSC 10 can comprise the transparent glass substrate 11,12 being attached with hyaline membrane 13,14 respectively, and catalyst is to electrode (CounterElectrode) 15, nano particle (TiO
2, titanium dioxide) and the work electrode (WorkingElectrode) 16 of structure or optoelectronic pole, dyestuff 17, electrolyte (Electrolyte) 18 and encapsulant 19.
First DSSC 10 is formed by the structure of the work electrode 16 and filling electrolyte 18 that are adsorbed with the nanoparticle structure of particular dye 17 between two glass substrates 11,12 being attached with ELD 13,14 respectively.Here, ELD 13,14 can be ATO, ITO or FTO, and usually provides with the state formed on glass substrate 11,12.
Concrete, DSSC 10 is the batteries with the similar concept of photosynthesis principle of plant, by light absorbing photosensitive dye 17, support the work electrode 16 of the titanium dioxide electrodes of the nanostructure of these dyestuffs 17, the solar cell that electrolyte 18 and catalyst are formed electrode 15.DSSC 10 does not use the joint of p-type as existing silicon solar cell or thin-film solar cells and n-type semiconductor, but according to electrochemical principle electrogenesis in next life.And because theoretical efficiency is high, environmental friendliness, be therefore expected to as the optimal solar cell of following green energy resource.
DSSC 10 is outside light contact dyestuffs 17, then dyestuff 17 produces electronics, (mainly utilizes TiO as Porous oxide semiconductor
2) work electrode 16 just receive this electronics externally transmitting.Then, electronics is flowed by external circuit and arrives electrode 15.Now, externally to run off electronics from the dyestuff 17 of work electrode 16, so supply an electronics to dyestuff 16 again from the ion of electrolyte 18 inside, and get back to the electronics of electrode again to the ion transport of electrolyte 18 inside from outside, thus forming energy transmittance process continuously.
Such process to depend primarily between work electrode 16 and electrolyte 18 and to the electrochemical reaction formed between electrode 15 and electrolyte 18, and therefore the area that contacts with electrolyte of electrode is wider, can much react rapidly.Further, the surface area of work electrode 16 is wider, can paste the dyestuff 17 of a lot of amount, thus increase the amount of the electricity that can produce.Therefore, as respective electrode 15,16 materials'use nano particle.Due to the increase that the surface area of material in same volume is extreme, therefore at the dyestuff that surface attachment is much measured, and the electrochemical reaction rates between electrode 15,16 and electrolyte 18 can be increased.Now, the module shape that DSSC module is arranged with most serial or parallel connections by the illustrated DSSC 10 of Fig. 1 provides.
On the one hand, DSSC utilizes transparent nano-oxide particles, therefore can utilize at the construction material etc. comprising the solar cell window (Window) being difficult to use opaque silicon solar cell in essence.In order to the efficiency of promoting such DSSC is studying the method for the absorption increasing visible ray in nano-oxide electrode.
As the another kind of method in order to improve the absorptivity in such long wavelength, having diameter is the titanium dioxide (TiO of hundreds of nm size
2) stratum granulosum over coating (Over-Coating) forms the method for light scattering layer on the titanium dioxide granule layer of transparent work electrode.
Fig. 2 briefly represents the vertical cross-section diagram possessing the DSSC module of light scattering layer according to prior art.
With reference to figure 2, be the light scattering layer 20 that titanium dioxide that to be formed by diameter on the work electrode 16 of the oxide semiconductor of nanostructure be hundreds of nm size is formed according to the DSSC module possessing light scattering layer of prior art.
Now, the titanium dioxide of light scattering layer 20 has the character of the light of scattering long wavelength region by the scattering properties of the particle diameter to light, therefore dyestuff 17 is by the light of ABSORPTION AND SCATTERING.Thus, can absorbing amount be increased and increase photoelectric conversion efficiency.
But when over coating light scattering layer 20, semi-conducting electrode is opaque, thus there is the problem that can not manufacture transparent DSSC, and it can restrict the application of DSSC.
Summary of the invention
Technical problem
The technical problem wanted in order to the present invention solving foregoing problems is, by forming porose light scattering layer work electrode (optoelectronic pole) is upper, thus provide and guarantee the translucent of DSSC module or pellucidity and the DSSC module possessing light scattering layer and the manufacture method thereof that increase the light income caused by light scattering.
The scheme of dealing with problems
As the scheme in order to reach aforementioned technical problem, according to the DSSC module possessing light scattering layer of the present invention, it is characterized in that, be included in the work electrode (optoelectronic pole) the first transparent glass substrate being formed and is formed by the oxide semiconductor layer being adsorbed with dyestuff, and on above-mentioned work electrode, be formed with the work electrode substrate of light scattering layer; Dock with above-mentioned work electrode substrate, and be formed on the second transparent glass substrate catalyst to electrode to electrode base board; And at the above-mentioned electrolyte to injecting in electrode base board and work electrode substrate of docking, but the light scattering layer of above-mentioned work electrode substrate to have relative to the whole area of light scattering layer be first hole of 10-90%.
Here, the second hole corresponded in the position in the first hole that above-mentioned light scattering layer is formed can be formed in above-mentioned work electrode.
On the one hand, as another scheme in order to reach aforementioned technical problem, can by comprising work electrode a) being formed on the first transparent glass substrate and formed by the Porous oxide semiconductor layer being adsorbed with dyestuff according to the manufacture method possessing the DSSC module of light scattering layer of the present invention, and on described work electrode, form that to have relative to the whole area of light scattering layer be that the light scattering layer in first hole of 10-90% is to make the step of work electrode substrate; B) on the second transparent glass substrate, catalyst is formed to the step of the making of electrode to electrode base board; C) the described step to electrode base board and work electrode substrate is docked; And inject electrolytical step to form in electrode base board and work electrode substrate d) in described docking.
Here, above-mentioned a) step can comprise a-1) on the first transparent glass substrate, form the step of the first transparency electrode; A-2) in described first transparency electrode, form the step of Porous oxide semiconductor layer; A-3) step of absorbing dye in described Porous oxide semiconductor layer; And a-4) on the Porous oxide semiconductor layer being adsorbed with described dyestuff, form the step of the light scattering layer in first hole with 10-90% relative to the whole area of light scattering layer.
Here, above-mentioned a-2) the Porous oxide semiconductor layer of step can have the second hole of the position corresponding to the first hole formed on above-mentioned light scattering layer.
The effect of invention
According to the present invention, at the light scattering layer that the upper formation of work electrode (optoelectronic pole) is porose, thus also ensure translucent or pellucidity while increasing the efficiency of DSSC module, thus be easily used in the construction material etc. comprising solar cell window (Window).
Accompanying drawing explanation
Fig. 1 is the figure in order to the structure and electricity generating principle that general DSSC is described.
Fig. 2 briefly represents the vertical cross-section diagram possessing the DSSC module of light scattering layer according to prior art.
Fig. 3 briefly illustrates the exploded perspective view possessing the DSSC module of light scattering layer according to the embodiment of the present invention.
Fig. 4 represents that Fig. 3's possesses the vertical cross-section diagram forming the state in hole in the DSSC module of light scattering layer on light scattering layer.
Fig. 5 is the vertical cross-section diagram possessing the state forming hole in the DSSC module of light scattering layer on light scattering layer and light absorbing zone representing Fig. 3.
Fig. 6 a to Fig. 6 d possesses in the DSSC module of light scattering layer, in order to the figure of the technique forming hole is described in light scattering layer according to the embodiment of the present invention.
Fig. 7 a to Fig. 7 d is the figure possessing the operation forming hole in the DSSC module of light scattering layer on light scattering layer and light absorbing zone in order to illustrate according to the embodiment of the present invention.
The explanation of the Reference numeral of major part in accompanying drawing
100: work electrode substrate
200: to electrode base board
110: the first glass substrates
120: the first transparency electrodes
130: the first conductive adhesive layer
140: the first collecting electrodes
150: light absorbing zone (dyestuff+porous membrane)
160: the first insulating protective layers
170: the first extraction electrodes
180: encapsulant
190: light scattering layer
191a: the first hole
191b: the second hole
210: the second glass substrates
220: the second transparency electrodes
230: catalyst is to electrode
240: the second conductive adhesive layer
250: the second collecting electrodes
260: the second insulating protective layers
270: the second extraction electrodes
280: electrolyte injection hole
Embodiment
Below by with reference to accompanying drawing, describe embodiments of the invention in detail in order to the those skilled in the art belonging to the present invention can be made easily to implement.But the present invention can be presented as various different form, and be not limited to illustrated embodiment here.Further, eliminate to clearly state the present invention and incoherent part is described in figure, and giving similar Reference numeral by specification entirety to similar part.
In whole specification, when recording certain part and " comprising " certain technical characteristic, when not have record contrary especially, this is not mean eliminating other technologies feature, but means and can also comprise other technologies feature.
The present invention is described in detail below by reference diagram.
Fig. 3 briefly illustrates the exploded perspective view possessing the DSSC module of light scattering layer according to the embodiment of the present invention, and Fig. 4 represents to possess in the DSSC module of light scattering layer at Fig. 3, porose situation is formed in light scattering layer, and using the A-A line of Fig. 3 as the vertical cross-section diagram of hatching line.
With reference to figure 3 and Fig. 4, be formed by mating operation electrode base board 100 and to electrode base board 200 according to the DSSC module possessing light scattering layer of the embodiment of the present invention.
Work electrode substrate 100 is, the first transparent glass substrate 110 is formed the work electrode (optoelectronic pole) 150 formed by the Porous oxide semiconductor layer being adsorbed with dyestuff, and above-mentioned work electrode 150 forms light scattering layer 190.Now, the first hole 191a of the 10-90% relative to the whole area of light scattering layer is formed in the light scattering layer 190 of above-mentioned work electrode substrate 100.The not enough situation being 10% relative to the whole area of light scattering layer of area of above-mentioned first hole 191a does not guarantee the transparency, therefore be difficult to the construction material etc. being applicable to comprise solar cell window (Window), and be difficult to during situation more than 90% expect that the satiable efficiency of DSSC improves.
And, the size and shape of above-mentioned first hole 191a can regulate arbitrarily in the scope that silk screen printing is possible, as an example, the shape in hole can be circle, triangle, quadrangle, pentagon, other polygonals, and also can be the shape of specific logo.The minimum print unit of silk screen printing is 30um.
In the present invention except being formed with the light scattering layer 190 of above-mentioned first hole 191a, remaining work electrode, the scheme usually adopted in DSSC can be used to electrode, electrolyte and encapsulant etc.
As concrete example, the Porous oxide semiconductor layer of above-mentioned work electrode 150 can by the titanium dioxide (TiO of 10-200nm size
2) formed, and the light scattering layer 190 being formed with above-mentioned first hole 191a can by titanium dioxide (TiO that is larger than the particle forming porous oxides semiconductor layer, 100-1000nm size
2) formed.
Electrode base board 200 is docked with above-mentioned work electrode substrate 100, and form catalyst to electrode on the second transparent glass substrate 210.
Electrolyte (not diagram) is be infused in docking above-mentioned in electrode base board 200 and work electrode substrate 100.
In addition, at least more than one the second hole of the position corresponding to the first hole 191a formed at above-mentioned light scattering layer 190 can be formed in above-mentioned work electrode 150, describe later with reference to Fig. 7.
According to the DSSC module possessing light scattering layer of the embodiment of the present invention, it can by the first transparency electrode 120, the first glass substrate 110 being equipped with porous membrane 151 grade being adsorbed with dyestuff 152 and the second glass substrate 210 being equipped with the second transparency electrode 220,230 etc. mutually subtend are arranged, and are equipped with electrolyte to form between the first transparency electrode 120 and the second transparency electrode 220,230.Now, the first glass substrate 110 and the second glass substrate 210 can be bonded with each other by the encapsulant 180 as binding agent.
By the DSSC module possessing light scattering layer according to the embodiment of the present invention, carry out more specific description by reference to Fig. 3 and Fig. 4 as follows.
The first glass substrate 110 playing supporter effect supporting the first transparency electrode 120 in the embodiment of the present invention is made into transparent can make incidence of external light.Given this, the first glass substrate 110 can be formed by transparent glass or plastics.Concrete example as plastics can exemplify PETG (PolyEthyleneTerephthalate, PET), PEN (PolyEthyleneNaphthalate:PEN), Merlon (Poly-Carbonate:PC), polypropylene (Poly-Propylene:PP), polyimides (Poly-Imide:PI), Triafol T (TriAcetylCellulose:TAC) etc.
The first transparency electrode 120 that first glass substrate 110 is formed can by indium tin oxide (IndiumTinOxide:ITO), fluorine tin-oxide (FluorineTinOxide:FTO), antimony tin oxide (AntimonyTinOxide:ATO), zinc oxide (ZincOxide), tin-oxide (TinOxide), ZnOGa
2o
3, ZnO-Al
2o
3form Deng transparency material.First transparency electrode 120 can be formed by the single film of above-mentioned transparency material or stacked film.The first transparency electrode 120 like this can be formed by by sputtering method, chemical vapour deposition technique, spray-wall interaction sedimentation etc.
First transparency electrode 120 can be formed the first collecting electrodes 140 be electrically connected with above-mentioned first transparency electrode 120, but be not necessary.Such as, in first collecting electrodes 140, an edge along this first transparency electrode 120 in the first transparency electrode 120 is formed, and the central portion that another one crosses the first transparency electrode 120 in the first transparency electrode 120 in the first collecting electrodes 140 is formed, but be not limited thereto.First collecting electrodes 140 has the shape of stripes formed along direction, side (the y-axis direction of figure).
The first collecting electrodes 140 like this can be formed than the more low-resistance metal having excellent conductance electrical of the first transparency electrode 120 formed by transparency material by being selected to have.Such as, the first collecting electrodes 140 can by be selected from nickel, gold, silver, copper, aluminium, magnesium, molybdenum, tungsten, zinc, iron, tin and comprise these alloy group in material form.
By the first conductive adhesive layer 130 between the first transparency electrode 120 and the first collecting electrodes 140, be electrically connected the first transparency electrode 120 and the first collecting electrodes 140, thus the first collecting electrodes 140 can be fixed by physics in the first transparency electrode 120.
Namely, the conductive particle that first conductive adhesive layer 130 comprises bonding material and disperses in this bonding material, with above-mentioned bonding material, the first collecting electrodes 140 physics is fixed in the first transparency electrode 120, is electrically connected the first transparency electrode 120 and the first collecting electrodes 140 with above-mentioned conductive particle.Here, above-mentioned bonding material can be made up of polyethylene is serial, polypropylene is serial, Polyurethane, epoxy series, oleic series, silicon are serial and combination etc.
Use with above-mentioned conductive particle when the material of polymeric particles face coat metal film, mildly can stand outside impact by polymeric particles.Here, polymeric particles can be formed by polystyrene series, epoxy series, silicon series and combination etc. thereof, and metal film can by being selected from nickel, gold, silver, copper, aluminium, magnesium, molybdenum, tungsten, zinc, iron, tin and the material comprised in the group of the wherein alloy composition of any one is formed.But be not limited to this, conductive particle is also likely only formed by metal, now, conductive particle can by being selected from nickel, gold, silver, copper, aluminium, magnesium, molybdenum, tungsten, zinc, iron, tin and the material comprised in the group of the wherein alloy composition of any one is formed.
The first conductive adhesive layer 130 like this can be formed by anisotropic conductive film (AnisotropicConductiveFilm).
Insulating protective layer 160 is formed while covering the first collecting electrodes 140 and the first conductive adhesive layer 130.Insulating protective layer 160 prevents the first collecting electrodes 140 from directly contacting with electrolyte, thus protection the first collecting electrodes 140 plays a part from electrolytical impact to prevent corrosion.Such insulating protective layer 160 can be made up of polymer substance.
Further, the first transparency electrode 120 is equipped with by the first collecting electrodes 140 multiple work electrodes 150 as light absorbing zone of isolating.As described above, light absorbing zone 150 refers to the work electrode comprising porous membrane 151 and dyestuff 152.
Here, porous membrane 151 comprises metal oxide particle, and such metal oxide particle is by titanium oxide (TitaniumOxide), zinc oxide, tin-oxide, strontium oxide (StrontiumOxide), indium oxide (IndiumOxide), iridium oxide (IridiumOxide), lanthanum-oxides (LanthanOxide), barium oxide (VanadiumOxide), molybdenum oxide (MolybdenumOxide), tungsten oxide (TungstenOxide), niobium oxide (NiobiumOxide), magnesium oxide (MagnesiumOxide), aluminum oxide (AluminiumOxide), yttrium oxide (Yttriumoxide), scandium oxide (Scandiumoxide), samarium oxide (SamariumOxide), gallium oxide (GalliumOxide), the formation such as strontium titanium oxide (StrontiumTitaniumOxide).Here, metal oxide particle is preferably by titanium oxide TiO
2, tin-oxide SnO
2, tungsten oxide WO
3, the formation such as zinc oxide ZnO or its complex.
Further, in porous membrane 151, electrically conductive microparticle (not diagram) and light scattering (not diagram) etc. can also be added in order to improving characteristic.
The electrically conductive microparticle added in porous membrane 151 plays a part to improve electron mobility energy, such as, can lift indium tin oxide etc.Improve the effect of photoelectric conversion efficiency in the path of the light that light scattering adding porous membrane 151 to plays by extending movement in solar cell.Such light scattering can be formed by the material forming porous membrane 151, and considers light scattering effect, preferably has the average grain diameter of 100-1000nm.
Such porous membrane 151, more correctly, absorbs exterior light at the metal oxide particle Adsorption on Surface of porous membrane 151 and generates the dyestuff 152 of electronics.As long as dyestuff 152 may be used for the dyestuff of DSSC, then do not limit, and as an example can by comprise aluminium (Al), platinum (Pt), palladium (Pd), europium (Eu), plumbous (Pb), iridium (Ir), ruthenium (Ru) etc. composite metal formed, and can organic dyestuff be used.
In addition, in the alcoholic solution being dissolved with dyestuff, flood fixed time the first glass substrate 110 being formed with porous membrane 151 and the first transparency electrode 120, dyestuff 152 can be made to be adsorbed on porous membrane 151.But the present invention is not limited thereto, and absorbing dye 152 can be carried out by multiple method.
In addition, in the first transparency electrode 120, outside encapsulant 180, form the first extraction electrode 170 be connected with external circuit (not illustrating).Here, the first extraction electrode 170 not only plays a part to connect external circuit, and together performs the effect of current collection electronics.
On the one hand, the second glass substrate 210 configured with the first glass substrate 110 subtend has been effects of the supporter of support second transparency electrode 220,230, so can be formed as transparent.Given this, the second glass substrate 210 is same as the first glass substrate 110 and can be formed by glass or plastics.Concrete example as plastics can lift PETG, PEN, Merlon, polypropylene, polyimides, Triafol T etc.
The second transparency electrode 220,230 and first transparency electrode 120 subtend that second glass substrate 210 is formed is configured, and transparency electrode 220 and catalyst electrode 230 can be comprised.Transparency electrode 220 can by indium tin oxide, fluorine tin-oxide, antimony tin oxide, zinc oxide, tin-oxide, ZnOGa
2o
3, ZnO-Al
2o
3deng transparency material formed.Now, transparency electrode 220 can be formed by the single film of above-mentioned transparency material or stacked film.Catalyst electrode 230 plays active oxidation-reduce to (Redoxcouple), and can by platinum, ruthenium, palladium, iridium, rhodium (Rh), osmium (Os), carbon (C), WO
3, TiO
2, CNT(carbon nano-tube, carbonnanotube), the formation such as carbon black (Carbonblack), Graphene (Graphene).
Transparency electrode 220 can be formed by sputtering method, chemical vapour deposition technique, spray-wall interaction sedimentation etc.
Catalyst electrode 230 can pass through physical vaporous deposition (electrolytic gold plating method, sputtering method, means of electron beam deposition etc.) or wet type coating (spin coating method, dip coating, flowing coating etc.) etc. and be formed.Illustrate for the situation being formed catalyst electrode 230 by platinum (Pt), can adopt to be coated in the organic solvents such as methyl alcohol, ethanol, isopropyl alcohol (Iso-PropylAlcohol:IPA) with wet type coating in transparency electrode 220 and dissolve H
2ptCl
6solution after, in air or oxygen atmosphere, the method for heat-treating at 400 DEG C.But the present invention is not limited thereto, and multiple method can be adopted to be natural.
Second transparency electrode 220,230 is formed the second collecting electrodes 250 be electrically connected with above-mentioned second transparency electrode 220,230.Be illustrated as an edge along this second transparency electrode 220,230 in the second transparency electrode 220,230 in the second collecting electrodes 250 in embodiments of the present invention to be formed, and the central portion that in the second collecting electrodes 250, another one crosses above-mentioned second transparency electrode 220,230 in the second transparency electrode 220,230 is formed.Second collecting electrodes 250 has the shape of stripes formed along direction, side (the y-axis direction of figure).
By the second conductive adhesive layer 240 be equipped with between the second transparency electrode 220,230 and second collecting electrodes 250, be electrically connected the second transparency electrode 220,230 and second collecting electrodes 250, thus the second collecting electrodes 250 can be fixed by physics in the second transparency electrode 220,230.Further, the second collecting electrodes 250 and the second conductive adhesive layer 240 can be covered and form the second insulating protective layer 260.Second collecting electrodes 250, second conductive adhesive layer 240 and the second insulating protective layer 260 identical or similar with aforesaid first collecting electrodes 140, first conductive adhesive layer 130 and the first insulating protective layer 160.
Further, in the second transparency electrode 220,230, outside encapsulant 180, form the second extraction electrode 270 be connected with external circuit (not illustrating).
First glass substrate 110 and the second glass substrate 210 can be engaged by encapsulant 180.The known encapsulant of the encapsulant that can use as DSSC can be used as encapsulant 180, thermal plastic high polymer film can be used as an example, epoxy series or silicon series thermosetting encapsulants, ultraviolet curing sealant, frit (Fritglass) etc.When using thermal plastic high polymer film as encapsulant 180, be equipped with thermal plastic high polymer film between the first glass substrate 110 and the second glass substrate 210 after, can by adding thermo-compressed to engage the first glass substrate 110 and the second glass substrate 210.
Electrolyte is then injected into the inner space between the first glass substrate 110 and the second glass substrate 210 by the electrolyte injection hole 280 of through second glass substrate 210 and the second transparency electrode 220,230, thus containing being immersed between the first transparency electrode 120 and the second transparency electrode 220,230.Such electrolyte disperses to the inner homogeneous of porous membrane 151.Electrolyte is performed the effect to dyestuff 152 of the electron transmission that obtained from the second transparency electrode 220,230 by redox.Then, electrolyte injection hole 280 is sealed by binding agent and frit, cover glass 290.Describe electrolyte in embodiments of the invention to be made up of liquid phase, but also can adopt the electrolyte of solid phase in embodiments of the invention, and this also belongs to scope of the present invention.
Such DSSC module, the exterior light such as the incident sunlight in the inside to solar cell, then light quantum is absorbed by dyestuff 152, so dyestuff transfers to excitation state by ground state, thus generates electronics.The electronics generated, after the conductive strips injection of the metal oxide particle of porous membrane 151, flows to behind external circuit (not diagram) through the first transparency electrode 120, moves to the second transparency electrode 220,230.On the one hand, the iodide in electrolyte are oxidized to teriodide, and the dyestuff 152 of oxidation is reduced, and the electronics of teriodide and arrival second transparency electrode 220,230 carries out reduction reaction and is reduced to iodide.Moved by such electronics and make DSSC work.
So, form porose light scattering layer 190 on work electrode 150 according to the DSSC module possessing light scattering layer of the embodiment of the present invention, thus while guaranteeing the translucent of DSSC module or pellucidity, increase the light income caused by light scattering, be therefore easily used in the construction material etc. comprising solar cell window (Window).
On the one hand, possessing in the DSSC module of light scattering layer according to the embodiment of the present invention, the optoelectronic pole part of absorbing dye also may form hole, under such circumstances, ensure that the transparency of solar cell, thus guarantee to become easier by the vision of solar cell.The hole of above-mentioned optoelectronic pole part will be formed in position corresponding to above-mentioned light scattering layer hole, and the size in optoelectronic pole hole and area can regulate arbitrarily, preferably, make it be formed as the 30-100% of the whole area in light scattering layer hole, can meet simultaneously guarantee the transparency of module and the efficiency of module and preferably.
Fig. 5 represents to possess in the DSSC module of light scattering layer at Fig. 3, in light scattering layer and light absorbing zone, form porose vertical cross-section diagram.
With reference to figure 5, possessing in the DSSC module of light scattering layer according to the embodiment of the present invention, at least more than one the second hole 191b of the position corresponding to the first hole 191a formed in above-mentioned light scattering layer 190 can be formed in work electrode 150, but omit the explanation with aforesaid Fig. 3 and same characteristic features illustrated in fig. 4.
According to the DSSC module possessing light scattering layer of the embodiment of the present invention, the Porous oxide semiconductor layer 151 of work electrode 150, in the part except being formed with at least more than one the second hole 191b part, can be formed in the mode of silk screen printing.Thus, in light scattering layer 190 and the whole middle formation hole of work electrode 150, thus more brightly through light, guarantee to become easier by the vision of DSSC module thus.
On the one hand, Fig. 6 a to Fig. 6 d is for illustration of possessing in the DSSC module of light scattering layer according to the embodiment of the present invention, light scattering layer being formed the figure of the operation in hole.
With regard to regard to the work electrode substrate 100 possessing the DSSC module of light scattering layer of the embodiment of the present invention, first, as illustrated in Fig. 6 a, the first transparent glass substrate 110 forms the first transparency electrode 120.
Then, as Fig. 6 b illustrates, above-mentioned first transparency electrode 120 forms Porous oxide semiconductor layer 151, afterwards, as Fig. 6 c illustrates, the first transparent glass substrate 110 is formed in the work electrode 150 being adsorbed with dyestuff 152 in above-mentioned Porous oxide semiconductor layer 151.
Then, as Fig. 6 d illustrates, with the titanium dioxide (TiO with 100-1000nm size diameter
2), the Porous oxide semiconductor layer 151 being adsorbed with above-mentioned dyestuff 152 is formed to have diameter be 30-1000um, there is the light scattering layer 190 of the first hole 191a becoming 30% relative to the whole area of light scattering layer 190.Now, referring again to Fig. 4, above-mentioned light scattering layer 190 is formed with screen printing mode (ScreenPrinting) in the part except the part except forming above-mentioned first hole 191a.
Finally, the making of the work electrode substrate of the light scattering layer 190 being formed with the first hole 191a had relative to the whole area 30% of light scattering layer 190 on above-mentioned work electrode 150 is completed.
Follow-up, make the second transparent glass substrate 210 is formed catalyst to electrode to electrode base board 200, and dock above-mentioned to electrode base board 200 and work electrode substrate 100, then inject electrolyte in above-mentioned docking in electrode base board 200 and work electrode substrate 100, thus complete the DSSC module possessing light scattering layer according to the embodiment of the present invention.
Fig. 7 a to Fig. 7 d is for illustration of at the figure possessing the operation forming hole in the DSSC module of light scattering layer in light scattering layer and light absorbing zone according to the embodiment of the present invention.
With regard to regard to the work electrode substrate 100 possessing the DSSC module of light scattering layer of the embodiment of the present invention, first, as Fig. 7 a illustrates, the first transparent glass substrate 110 forms the first transparency electrode 120.
Then, as Fig. 7 b illustrates, the first transparency electrode 120 is formed with the Porous oxide semiconductor layer 151 of the second hole 191b.Namely, be formed with the second hole 191b of the position of the first hole 191a formed corresponding to aforesaid light scattering layer 190 in above-mentioned Porous oxide semiconductor layer 151, and can be formed with screen printing mode in part except the part forming the second hole 191b.
Then, as Fig. 7 c illustrates, the first transparent glass substrate 110 is formed in the work electrode 150 being adsorbed with dyestuff 152 in the Porous oxide semiconductor layer 151 being formed with above-mentioned second hole 191b.
Then, as Fig. 7 d illustrates, the Porous oxide semiconductor layer 151 being adsorbed with above-mentioned dyestuff 152 forms the light scattering layer 190 with the first hole 191a.Now, above-mentioned light scattering layer 190 can be formed in silk screen printing (ScreenPrinting) mode in the part except forming above-mentioned first hole 191a part.
Finally, the making being formed with the work electrode substrate of the light scattering layer 190 with the first hole 191a on the work electrode 150 with above-mentioned second hole 191b is completed.
Follow-up, be produced on the second transparent glass substrate 210 is formed catalyst to electrode to electrode base board 200, then dock above-mentioned to electrode base board 200 and work electrode substrate 100, inject electrolyte in above-mentioned docking in electrode base board 200 and work electrode substrate 100, thus complete the DSSC module possessing light scattering layer according to the embodiment of the present invention.
On the one hand, following table 1 is the table in order to compare according to the DSSC module possessing light scattering layer of the embodiment of the present invention and the DSSC module according to prior art.
Table 1
The DSSC module possessing light scattering layer according to the embodiment of the present invention is, as aforementioned, form by forming the 2nd embodiment forming hole in the 1st embodiment in hole and whole light scattering layer and optoelectronic pole in light scattering layer, though and together show according to the DSSC module of prior art the 1st comparative example that do not form light scattering layer and form the 2nd comparative example that light scattering layer does not form hole.
As above-mentioned table 1 illustrates, do not form the 1st comparative example of light scattering layer according to the DSSC module of prior art, although that is, only have the DSSC module forming optoelectronic pole layer to have the transparency, efficiency is low.And forming light scattering layer, not form the situation of the 2nd comparative example in hole high with the 1st comparative example phase specific efficiency, but opaque, thus be difficult to be suitable for as solar cell window (window).
In contrast, according to the embodiment of the present invention in light scattering layer, form the 1st porose embodiment, have and can obtain the efficiency that caused by light scattering layer simultaneously and improve and the advantage of permeability.
In addition, when light scattering layer and optoelectronic pole all form the 2nd porose embodiment, permeability can be increased further.
Aforesaid explanation of the present invention is in order to example, and those skilled in the art in the invention can be understood as can when not changing technological thought of the present invention, must easily be deformed into other concrete forms when feature.So the embodiment more than described is all exemplary in all respects, shall not be understood as limiting.Such as, can be implemented by the form of disperseing with each feature illustrated by single form, and also can be implemented by the form combined with the feature illustrated by the form of dispersion equally.
Scope of the present invention is presented in claims described later, instead of in above-mentioned detailed description, and the form being changed by the meaning of claims and the institute of scope and the derivation of its equivalent conception or be out of shape should be interpreted as being contained in the present invention.
Industrially utilize possibility
According to the present invention, at the light scattering layer that the upper formation of work electrode (optoelectronic pole) is porose, thus also ensure translucent or pellucidity, so the construction material etc. comprised within solar cell window (Window) easily can be used in while increasing the efficiency of DSSC module.
Claims (8)
1. possess a DSSC module for light scattering layer, it is characterized in that, comprise:
Work electrode substrate, this work electrode substrate is, the first transparent glass substrate is formed the work electrode and optoelectronic pole that are formed by the Porous oxide semiconductor layer of area load dyestuff, and is formed with light scattering layer on described work electrode;
To electrode base board, this is dock with described work electrode substrate, and be formed with catalyst to electrode on the second transparent glass substrate electrode base board; And
At the described electrolyte to injecting in electrode base board and work electrode substrate of docking,
It is first hole of 10-90% that the light scattering layer of described work electrode substrate has relative to the whole area of light scattering layer,
The titanium dioxide that described light scattering layer is 100-1000nm by diameter is formed.
2. the DSSC module possessing light scattering layer according to claim 1, is characterized in that, the Porous oxide semiconductor layer of described work electrode is formed by the titanium dioxide of 10-200nm size.
3. the DSSC module possessing light scattering layer according to claim 1, is characterized in that, is formed with the second hole of the position corresponding to the first hole formed in described light scattering layer in described work electrode.
4. the DSSC module possessing light scattering layer according to claim 3, is characterized in that, makes the whole area in the second hole formed in described work electrode become the 30-100% of the whole area in the hole formed in described light scattering layer.
5. possess a manufacture method for the DSSC module of light scattering layer, comprise:
A) step of work electrode substrate is made, this work electrode substrate is, first transparent glass substrate is formed the work electrode formed by the Porous oxide semiconductor layer being adsorbed with dyestuff, and on described work electrode, is formed with the light scattering layer relative to the whole area of light scattering layer with the first hole being 10-90%;
B) make the step to electrode base board, this is on the second transparent glass substrate, be formed with catalyst to electrode to electrode base board;
C) the described step to electrode base board and work electrode substrate is docked; And
D) electrolytical step is injected in described docking in electrode base board and work electrode substrate,
Described light scattering layer is that the titanium dioxide being 100-1000nm by diameter is formed.
6. the manufacture method possessing the DSSC module of light scattering layer according to claim 5, wherein, described a) step comprises:
A-1) on the first transparent glass substrate, form the step of the first transparency electrode;
A-2) in described first transparency electrode, form the step of Porous oxide semiconductor layer;
A-3) step of absorbing dye in described Porous oxide semiconductor layer; And
A-4) on the described Porous oxide semiconductor layer being adsorbed with dyestuff, form the step relative to the whole area of light scattering layer with the light scattering layer being first hole of 10-90%.
7. the manufacture method possessing the DSSC module of light scattering layer according to claim 6, it is characterized in that, described a-2) be formed with the second hole of the position corresponding to the first hole formed on described light scattering layer in the Porous oxide semiconductor layer of step.
8. the manufacture method possessing the DSSC module of light scattering layer according to claim 7, it is characterized in that, make the whole area in the second hole formed in described work electrode become the 30-100% of the whole area in the hole formed in described light scattering layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0101663 | 2010-10-19 | ||
| KR1020100101663A KR20120040322A (en) | 2010-10-19 | 2010-10-19 | Dye-sensitized solar cell with light scattering layer, and manufacturing method thereof |
| PCT/KR2011/007527 WO2012053763A2 (en) | 2010-10-19 | 2011-10-11 | Dye-sensitized solar cell module equipped with light scattering layer and method for manufacturing thereof |
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| CN103168367A CN103168367A (en) | 2013-06-19 |
| CN103168367B true CN103168367B (en) | 2016-01-20 |
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| CN201180050436.6A Expired - Fee Related CN103168367B (en) | 2010-10-19 | 2011-10-11 | Dye-sensitized solar cell module having light scattering layer and method for manufacturing same |
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| Country | Link |
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| JP (1) | JP2013545227A (en) |
| KR (1) | KR20120040322A (en) |
| CN (1) | CN103168367B (en) |
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| JP5953026B2 (en) * | 2011-10-20 | 2016-07-13 | ローム株式会社 | Method for producing dye-sensitized solar cell |
| JP2013251228A (en) * | 2012-06-04 | 2013-12-12 | Sharp Corp | Photoelectric conversion element and dye-sensitized solar cell |
| JP2013251229A (en) * | 2012-06-04 | 2013-12-12 | Sharp Corp | Photoelectric conversion element and dye-sensitized solar cell |
| KR101674449B1 (en) * | 2012-11-28 | 2016-11-09 | 주식회사 오리온 | Method for manufacturing dye-sensitized solar cell using the same |
| WO2016125846A1 (en) | 2015-02-04 | 2016-08-11 | 株式会社フジクラ | Photoelectric conversion element |
| AT518340B1 (en) * | 2016-02-26 | 2020-04-15 | Sfl Tech Gmbh | Glass module, building with at least one glass module and method for producing a glass module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226966A (en) * | 2008-01-22 | 2008-07-23 | 西安交通大学 | Customizing electroconductive film of dye sensitization TiO2 nanocrystalline solar battery and preparation thereof |
| CN101540233A (en) * | 2008-03-20 | 2009-09-23 | 东进世美肯株式会社 | Dye sensitization solar cell and producing method thereof |
| US20100101645A1 (en) * | 2008-10-27 | 2010-04-29 | Samsung Electro-Mechanics Co., Ltd. | Electrode of dye-sensitized solar cell, manufacturing method thereof and dye-sensitized solar cell |
| WO2010109785A1 (en) * | 2009-03-23 | 2010-09-30 | 新日鐵化学株式会社 | Dye-sensitized solar cell and method for manufacturing same |
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| JP2004314313A (en) * | 2003-04-11 | 2004-11-11 | Toppan Printing Co Ltd | Laminate, its manufacturing method and product using the laminate |
| EP1589549A1 (en) * | 2004-04-23 | 2005-10-26 | Sony Deutschland GmbH | A method of producing a porous semiconductor film on a substrate |
| KR100656365B1 (en) * | 2005-11-18 | 2006-12-13 | 한국전자통신연구원 | Composition of non-aqueous paste for forming semiconductor electrode of dye-sensitized solar cell, preparation method thereof, and dye-sensitized solar cells comprising the same |
| KR20100071837A (en) * | 2008-12-19 | 2010-06-29 | 주식회사 이건창호 | Screen printing plate, screen printer and dye-sensitized solar cell |
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2010
- 2010-10-19 KR KR1020100101663A patent/KR20120040322A/en not_active Application Discontinuation
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2011
- 2011-10-11 JP JP2013534800A patent/JP2013545227A/en active Pending
- 2011-10-11 CN CN201180050436.6A patent/CN103168367B/en not_active Expired - Fee Related
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226966A (en) * | 2008-01-22 | 2008-07-23 | 西安交通大学 | Customizing electroconductive film of dye sensitization TiO2 nanocrystalline solar battery and preparation thereof |
| CN101540233A (en) * | 2008-03-20 | 2009-09-23 | 东进世美肯株式会社 | Dye sensitization solar cell and producing method thereof |
| US20100101645A1 (en) * | 2008-10-27 | 2010-04-29 | Samsung Electro-Mechanics Co., Ltd. | Electrode of dye-sensitized solar cell, manufacturing method thereof and dye-sensitized solar cell |
| WO2010109785A1 (en) * | 2009-03-23 | 2010-09-30 | 新日鐵化学株式会社 | Dye-sensitized solar cell and method for manufacturing same |
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| WO2012053763A2 (en) | 2012-04-26 |
| KR20120040322A (en) | 2012-04-27 |
| WO2012053763A3 (en) | 2012-06-28 |
| CN103168367A (en) | 2013-06-19 |
| JP2013545227A (en) | 2013-12-19 |
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