CN103165779B - LED semiconductor element and manufacture method thereof - Google Patents
LED semiconductor element and manufacture method thereof Download PDFInfo
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- CN103165779B CN103165779B CN201310051856.7A CN201310051856A CN103165779B CN 103165779 B CN103165779 B CN 103165779B CN 201310051856 A CN201310051856 A CN 201310051856A CN 103165779 B CN103165779 B CN 103165779B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 60
- 150000004767 nitrides Chemical class 0.000 claims abstract description 59
- 150000001875 compounds Chemical class 0.000 claims description 25
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000013256 coordination polymer Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- -1 magnesium nitride Chemical class 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 11
- 238000000407 epitaxy Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 120
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Abstract
The present invention relates to LED semiconductor element and manufacture method thereof, wherein, LED semiconductor element includes at least one semiconductor layer, described semiconductor layer comprises lower semiconductor layer and upper semiconductor layer, the roughened layer of the upper surface being created on lower semiconductor layer is included between described lower semiconductor layer and described upper semiconductor layer, described roughened layer comprises multiple projection, and described roughened layer generates continuous print layer of nitride material, described in protrude through and protrude from described layer of nitride material; The surrounding of described layer of nitride material is exposed to outside described roughened layer.The invention provides the omnidistance LED semiconductor element with the defect barrier layer be made up of roughened layer and layer of nitride material can grown up in epitaxy technique, reduce the dislocation defects in semiconductor layer, improve crystalline quality of material, and then improve the performance of luminescent device, do not need secondary epitaxy, not need through the complex steps such as photoetching, corrosion to make figure, have that implementation method is simple, low cost and other advantages.
Description
[technical field]
The present invention relates to a kind of LED semiconductor element and manufacture method thereof, particularly relate to a kind of can in order to reduce LED semiconductor element and the manufacture method thereof of inner dislocation defects.
[background technology]
Luminescent spectrum due to III-nitride semiconductor material contains the wavelength between visible ray to ultraviolet light, adding III-nitride semiconductor material is direct transition type semiconductor, and is widely used on the light-emitting component such as light-emitting diode (LED) or laser diode (LD).
Be used in the technology of the III nitride semiconductor element manufacturing better quality at present, usually Group III nitride semiconductor layer is grown up on applicable nonideal substrate, at present this type of substrate is including but not limited to heteroepitaxy substrates such as sapphire, silicon, GaAs or carborundum, but all heteroepitaxy substrates produce lattice in the deposition of high-quality Group III nitride semiconductor layer does not mate the challenge with thermal mismatching; Lattice does not mate and caused by the spacing difference of crystal Atom, and thermal mismatching caused by the difference of thermal coefficient of expansion between different materials.
The lattice difference of coefficients about about 3% of usual carbofrax material and GaN compound, the lattice difference of coefficients about about 16% of sapphire material and GaN compound, and in epitaxy technique, the unmatched situation of this lattice often produces poor row's problem, namely there is the line dislocation defects longitudinally (direction vertical with substrate surface) run through at element internal.Wherein, in III nitride semiconductor element, usually having density is 10
9cm
-2the line dislocation defects situation of left and right, so a large amount of poor rows can transfer to the element the superiors by forming each layer of different III nitride semiconductor, finally causes element abnormal.
Above-mentioned variety of problems, often makes the qualification rate of the characteristic such as the component life of the threshold current of laser diode, light-emitting diode and laser diode and the reliability of element greatly reduce.In addition, thermal mismatching also should come into one's own.Usually grow after substrate in III-nitride semiconductor material, when sample is cooled to room temperature, the interface of difference between bi-material of thermal expansion (contraction) speed produces the stress of height, and amount of stress is directly relevant with deposited thicknesses of layers, the thicker then stress of rete is larger.Such as sapphire has higher thermal coefficient of expansion than GaN, therefore when Sapphire Substrate and GaN layer cool, the mismatch problem of interface makes that GaN is subject to compression and sapphire is subject to tensile stress, and when thickness is more than 10 microns, stress levels, more than the breaking degree of GaN, may produce the situation that rete breaks.The existence of extensive defect (line difference row, dislocation stack) causes element function to worsen significantly and causes operation lifetime to shorten.
US Patent No. 6627974, discloses a kind of nitride semiconductor device with T-type structure, in order to suppress the disadvantageous effect produced in growing nitride semiconductor element; Its method detailed is, be positioned at the surface of the nitride semiconductor layer on substrate, utilize the methods such as chemical vapour deposition (CVD) (CVD), sputter to grow up a protective layer, recycling gold-tinted photoetching process makes protective layer have given shape, such as striped, check or island structure; Subsequently, the space of nitride semiconductor layer self-insurance sheath upwards with horizontal growth, and to stop before complete protective mulch, to form the nitride semiconductor layer of T-type structure; Afterwards, this T-type structure can continue the semiconductor layer forming other, to reduce the dislocation defects between semiconductor, wherein, the material (SiO that this protective layer choice for use more not easily makes nitride semi-conductor material grow up thereon
x, Si
xn
y, TiO
xor ZrO
x), and make to be formed T-shaped nitride semiconductor structure between two adjacent protective layers because of above-mentioned characteristic.But the technique that this patent provides is loaded down with trivial details, and the technique such as CVD, sputter or gold-tinted photoetching that this patent utilizes, there is the possibility polluting chip growth face.
The screen (patternedmasklayer) that US Patent No. 6345063 uses is silica (SiO
2) or silicon nitride (Si
3n
4), and above-mentioned screen formed by the technique beyond MOCVD, technique is loaded down with trivial details, and has the possibility polluting chip growth face.In addition, this patent proposes InGaN layer directly to grow up on the shielding layer, so but not easily forms the second best in quality epitaxial loayer.
The shortcoming majority of comprehensive above-mentioned priority patent is: technique is loaded down with trivial details, and extra technique need be utilized to form defect barrier layer, has the problems such as the possibility polluting chip growth face.
In view of this, still be necessary the new semiconductor component structure of exploitation or new semiconductor element process, to reach the target reducing semiconductor element internal flaw, and improve the qualification rate of technique, promote reliability and the life-span of semiconductor element, to accord with the demands of the market.
[summary of the invention]
First technical problem that the present invention will solve is to provide a kind of LED semiconductor element that can omnidistance can grow up in epitaxy technique, and it can reduce because lattice does not mate produced poor row's problem.
Second technical problem that the present invention will solve is to provide a kind of manufacture method of the LED semiconductor element that can omnidistance can grow up in epitaxy technique, and technique is simple, and can reduce because lattice does not mate produced poor row's problem.
Above-mentioned first technical problem is achieved through the following technical solutions:
A kind of LED semiconductor element, it is characterized in that, include at least one semiconductor layer, described semiconductor layer comprises lower semiconductor layer and upper semiconductor layer, the roughened layer of the upper surface being created on lower semiconductor layer is included between described lower semiconductor layer and described upper semiconductor layer, described roughened layer comprises multiple projection, and described roughened layer generates continuous print layer of nitride material, described in protrude through and protrude from described layer of nitride material; The surrounding of described layer of nitride material is exposed to outside described roughened layer.
Further scheme is, described lower semiconductor layer and described upper semiconductor layer are GaN semiconductor layer.
Further scheme is, the nitride material of described layer of nitride material is MgN compound or SiN compound.
Further scheme is, described MgN compound is magnesium nitride, and described SiN compound is silicon nitride.
Further scheme is, the thickness of described upper semiconductor layer is 500nm-2000nm, and the thickness of described lower semiconductor layer is 500nm-2000nm, and the thickness of described layer of nitride material is 5nm-100nm.
Above-mentioned second technical problem is achieved through the following technical solutions:
A manufacture method for LED semiconductor element, is characterized in that, comprising:
Step 1, lower semiconductor layer at Grown semiconductor layer;
Step 2, by regulate extension build brilliant parameter lower semiconductor layer upper surface generate have roughened layer, described roughened layer comprises multiple projection, even if the surface coarsening of lower semiconductor layer, the technique of this alligatoring semiconductor layer surface is known technology, no longer burdensome at this;
Step 3, by regulating extension to build brilliant parameter generate continuous print layer of nitride material on described roughened layer, described in protrude through and protrude from described layer of nitride material, the surrounding of described layer of nitride material is exposed to outside described roughened layer;
Step 4, on described roughened layer, then generate the upper semiconductor layer of semiconductor layer.
Further scheme is, described lower semiconductor layer and described upper semiconductor layer are GaN semiconductor layer.
Further scheme is, in above scheme, the nitride material of layer of nitride material is generally SiN compound (SiN
x) or MgN compound (MgN
x);
Take nitride material as MgN compound (MgN
x) be example, described step 3 is specially:
Growth temperature in reative cell is transferred to 700 DEG C--1100 DEG C, reative cell internal gas pressure is 0.05-1.2 atmospheric pressure, then in reative cell, passes into CP separately
2mg and NH
3, gas flow is respectively 1x10
-7-1x10
-4/ minute and 0.5-10 moles/min, the time of passing into is 1 minute to 30 minutes, CP
2mg and NH
3react, roughened layer is formed by MgN compound (MgN
x) layer of nitride material that forms;
Take nitride material as SiN compound (SiN
x) be example, described step 3 is specially: the growth temperature in reative cell is transferred to 700 DEG C--and 1100 DEG C, reative cell internal gas pressure is 0.05-1.2 atmospheric pressure, then in reative cell, passes into separately silane gas and NH
3, gas flow is respectively 1x10
-6-1x10
-2/ minute and 0.5-10 moles/min, the time of passing into is 1 minute to 30 minutes, silane gas and NH
3react, roughened layer is formed by SiN compound (SiN
x) layer of nitride material that forms.
Further scheme is, described MgN compound is magnesium nitride, and described SiN compound is silicon nitride.
Further scheme is, the thickness of described upper semiconductor layer is 500nm-2000nm, and the thickness of described lower semiconductor layer is 1um, and the thickness of described layer of nitride material is 5nm-100nm.
The invention provides the omnidistance LED semiconductor element with the defect barrier layer be made up of roughened layer and layer of nitride material can grown up in epitaxy technique, reduce the dislocation defects in semiconductor layer, improve crystalline quality of material, and then improve the performance of luminescent device, do not need secondary epitaxy, not need through the complex steps such as photoetching, corrosion to make figure, have that implementation method is simple, low cost and other advantages.The present invention is through the scattering interface utilizing these nitride material series of strata as light, make the photon energy of light emitting layer radiation by the scattering effect of layer of nitride material in inverted pyramid type and spacer region in the medial surface of cutting sth. askew to help lifting photon to penetrate probability outside light-emitting diode, so can reduce the probability that total reflection occurs, use the object reached and promote external quantum efficiency.
[accompanying drawing explanation]
Fig. 1-Fig. 4 is the structural representation that in manufacture process, LED semiconductor element is formed.
[embodiment]
Embodiment one
A kind of LED semiconductor element that the present embodiment provides, the semiconductor layer including substrate 1 and be created on substrate 1, semiconductor layer comprises lower semiconductor layer 2 and upper semiconductor layer 5, the roughened layer 3 of the upper surface being created on lower semiconductor layer 2 is included between lower semiconductor layer 2 and upper semiconductor layer 5, roughened layer 3 comprises multiple projection, roughened layer 3 generates and has continuous print layer of nitride material 4, protrude through and protrude from layer of nitride material 4, the surrounding of layer of nitride material 4 is exposed to outside roughened layer 3.
Wherein, substrate 1 is Sapphire Substrate, and lower semiconductor layer 2 is the GaN semiconductor layer of the high temperature undoped that 500nm-2000nm is thick, and roughened layer 3 is MgN compound, and upper semiconductor layer 5 is the GaN semiconductor layer of the high temperature undoped that 500nm-2000nm is thick.
The manufacture method of above-mentioned LED semiconductor element, specifically comprises:
As shown in Figure 1, step 1, first reative cell substrate 1 being put into MOCVD (metal-organic chemical vapor deposition equipment) growth furnace, reative cell is at H
2be warmed up to 1100 DEG C to be carried out 15 minutes heat treatment to substrate 1 under atmosphere, then reduced temperature to 535 DEG C with 10 minutes, grow the low temperature GaN buffer of thick layer 30nm on substrate 1, the source material of employing is trimethyl gallium and NH
3; Then reative cell raised temperature to 1060 DEG C in 8 minutes is made, this temperature-rise period carries out thermal annealing to low temperature GaN buffer makes it crystallization again, the GaN semiconductor layer of the thick high temperature undoped of 500nm-2000nm is grown, i.e. lower semiconductor layer 2 at 1060 DEG C of temperature;
As shown in Figure 2, step 2, then by regulate extension build brilliant parameter lower semiconductor layer 2 generate have roughened layer 3, roughened layer 3 comprises multiple projection, namely carries out surface coarsening to lower semiconductor layer 2;
As shown in Figure 3, the growth temperature in step 3, reative cell is transferred to 1060 DEG C, and reative cell internal gas pressure is 0.5 atmospheric pressure, then in reative cell, passes into Cp separately
2mg (two luxuriant magnesium) source and NH
3, gas flow is respectively 1x10
-7-1x10
-4/ minute and 0.5-10 moles/min, the time of passing into is 10 minutes, Cp
2mg (two luxuriant magnesium) source and NH
3both form the layer of nitride material 4 be made up of MgN compound at reaction on roughened layer 3, and its thickness reaches 5nm-10nm; Above-mentionedly multiplely protrude through and protrude from layer of nitride material 4, the surrounding of layer of nitride material 4 is exposed to outside roughened layer 3;
As shown in Figure 4, step 4, on roughened layer 3, then grow the GaN semiconductor layer of the thick high temperature undoped of 500nm-2000nm, i.e. upper semiconductor layer 5, the lower semiconductor layer 2 that the growth conditions of upper semiconductor layer 5 is thick with 500nm-2000nm is the same; Because layer of nitride material 4 is equivalent to the mask of nano-scale, there is the process of an epitaxial lateral overgrowth upper semiconductor layer 5 incipient stage of growth, can reduce the dislocation defects of GaN semiconductor layer like this.
According to actual needs, can by existing conventional method at other epitaxial material of upper semiconductor layer 5 Epitaxial growth, comprise mix Si N-shaped GaN, InGaN/nitride multi-quantum well, mix magnesium gallium nitride P type GaN etc.
Embodiment two
The LED semiconductor element structurally main difference that the LED semiconductor element that the present embodiment provides and embodiment one provide, substrate is SiC substrate.Thus, also cause manufacture method different.
The manufacture method of the LED semiconductor element that the present embodiment provides, specifically comprises:
Step 1, first reative cell SiC substrate being put into MOCVD growth furnace, reative cell is at H
21100 DEG C to be carried out 15 minutes heat treatment to SiC substrate is warmed up to, then with within 3 minutes, reducing temperature to 1000 DEG C-1100 DEG C, at the high temperature Al of Grown thickness 10nm-200nm under atmosphere
xga
1-Xn resilient coating, wherein 0 < x < 1, the source material of employing is trimethyl aluminium, trimethyl gallium and NH
3; Then at 1060 DEG C of temperature, the GaN semiconductor layer of the thick high temperature undoped of 500nm-2000nm is grown, i.e. lower semiconductor layer 2;
Step 2, to generate in lower semiconductor layer have the roughened layer of multiple projection by regulating extension to build brilliant parameter, namely surface coarsening is carried out to lower semiconductor layer;
Step 3, temperature is transferred to 1070 degree, in reative cell, passes into NH separately
3and CP
2mg, gas flow is respectively 1x10
-7-1x10
-4/ minute and 0.5-10 moles/min, the time of passing into is 6 minutes, Cp
2mg (two luxuriant magnesium) source and NH
3both form the layer of nitride material be made up of MgN compound at reaction, and the thickness of layer of nitride material 4 reaches 5nm-20nm;
Step 4, on roughened layer, then grow the GaN semiconductor layer of the thick high temperature undoped of 500nm-2000nm, i.e. upper semiconductor layer, the growth conditions of upper semiconductor layer is see the step 4 in embodiment one.
According to actual needs, can by existing conventional method other epitaxial material of extension on upper semiconductor layer 5, comprise mix Si N-shaped GaN, InGaN/nitride multi-quantum well, mix magnesium gallium nitride etc.
Embodiment three
The LED semiconductor element structurally main difference that the LED semiconductor element that the present embodiment provides and embodiment one provide, roughened layer 3 is SiN compound.
Therefore, the manufacture method of the LED semiconductor element that the present embodiment provides and the manufacture method of embodiment one are unlike step 3, step 3 in this enforcement, specifically: the growth temperature in reative cell is transferred to 700 DEG C--1100 DEG C, reative cell internal gas pressure is 0.05-1.2 atmospheric pressure, then in reative cell, passes into separately silane gas and NH
3, gas flow is respectively 1x10
-6-1x10
-2/ minute and 0.5-10 moles/min, the time of passing into is 1 minute to 30 minutes, silane gas and NH
3react, roughened layer is formed by SiN compound (SiN
x) layer of nitride material that forms, its thickness can reach 5nm-100nm.
Apparently, according to the description in embodiment above, the present invention may have many amendments and difference.Therefore need to be understood in the scope of its additional claim, except above-mentioned description in detail, the present invention can also implement widely in other embodiments.Above are only the preferred embodiments of the present invention, and be not used to limit claim of the present invention; Under all other does not depart from disclosed spirit, the equivalence that completes changes or amendment, all should be included in the scope of described claim.
Claims (10)
1. a LED semiconductor element, it is characterized in that, include at least one semiconductor layer, described semiconductor layer comprises lower semiconductor layer and upper semiconductor layer, the roughened layer of the upper surface being created on lower semiconductor layer is included between described lower semiconductor layer and described upper semiconductor layer, described roughened layer comprises multiple projection, and described roughened layer generates continuous print layer of nitride material, described in protrude through and protrude from described layer of nitride material; The surrounding of described layer of nitride material is exposed to outside described roughened layer.
2. LED semiconductor element according to claim 1, is characterized in that, described lower semiconductor layer and described upper semiconductor layer are GaN semiconductor layer.
3. LED semiconductor element according to claim 1, is characterized in that, the nitride material of described layer of nitride material is MgN compound or SiN compound.
4. LED semiconductor element according to claim 3, is characterized in that, described MgN compound is magnesium nitride, and described SiN compound is silicon nitride.
5. LED semiconductor element according to claim 1, is characterized in that, the thickness of described upper semiconductor layer is 500nm-2000nm, and the thickness of described lower semiconductor layer is 500nm-2000nm, and the thickness of described layer of nitride material is 5nm-100nm.
6. a manufacture method for LED semiconductor element, is characterized in that, comprising:
Step 1, lower semiconductor layer at Grown semiconductor layer;
Step 2, by regulate extension build brilliant parameter lower semiconductor layer upper surface generate have roughened layer, described roughened layer comprises multiple projection;
Step 3, by regulating extension to build brilliant parameter generate continuous print layer of nitride material on described roughened layer, described in protrude through and protrude from described layer of nitride material, the surrounding of described layer of nitride material is exposed to outside described roughened layer;
Step 4, on described roughened layer, then generate the upper semiconductor layer of semiconductor layer.
7. the manufacture method of LED semiconductor element according to claim 6, is characterized in that, described lower semiconductor layer and described upper semiconductor layer are GaN semiconductor layer.
8. the manufacture method of LED semiconductor element according to claim 6, is characterized in that, described step 3 is specially:
Growth temperature in reative cell is transferred to 700 DEG C--1100 DEG C, reative cell internal gas pressure is 0.05-1.2 atmospheric pressure, then in reative cell, passes into CP separately
2mg and NH
3, gas flow is respectively 1x10
-7-1x10
-4/ minute and 0.5-10 moles/min, the time of passing into is 1 minute to 30 minutes, CP
2mg and NH
3react, roughened layer is formed the layer of nitride material be made up of MgN compound;
Or,
Growth temperature in reative cell is transferred to 700 DEG C--1100 DEG C, reative cell internal gas pressure is 0.05-1.2 atmospheric pressure, then in reative cell, passes into separately silane gas and NH
3, gas flow is respectively 1x10
-6-1x10
-2/ minute and 0.5-10 moles/min, the time of passing into is 1 minute to 30 minutes, silane gas and NH
3react, roughened layer is formed the layer of nitride material be made up of SiN compound.
9. the manufacture method of LED semiconductor element according to claim 8, is characterized in that, described MgN compound is magnesium nitride, and described SiN compound is silicon nitride.
10. the manufacture method of LED semiconductor element according to claim 6, it is characterized in that, the thickness of described upper semiconductor layer is 500nm-2000nm, and the thickness of described lower semiconductor layer is 500nm-2000nm, and the thickness of described layer of nitride material is 5nm-100nm.
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| CN104393125B (en) * | 2014-12-17 | 2017-05-10 | 安徽三安光电有限公司 | Method for preparing light emitting element |
| CN106098882B (en) * | 2016-07-25 | 2020-08-18 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN108615798A (en) * | 2018-04-27 | 2018-10-02 | 福建兆元光电有限公司 | nitride LED epitaxial layer structure and manufacturing method |
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| CN101740702A (en) * | 2009-12-02 | 2010-06-16 | 武汉华灿光电有限公司 | ZnO nanosphere-based GaN-based light emitting diode surface roughening method |
| CN102214738A (en) * | 2011-04-28 | 2011-10-12 | 山东大学 | Method for preparing TiO2 (titanium dioxide) nano-pillar array on surface of LED (light-emitting diode) epitaxial wafer |
| CN203192835U (en) * | 2013-02-08 | 2013-09-11 | 芜湖德豪润达光电科技有限公司 | Led semiconductor element |
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