CN103162839A - Reading circuit for Nb5 N6 normal temperature Terahertz detector linear array - Google Patents
Reading circuit for Nb5 N6 normal temperature Terahertz detector linear array Download PDFInfo
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- CN103162839A CN103162839A CN2013100967443A CN201310096744A CN103162839A CN 103162839 A CN103162839 A CN 103162839A CN 2013100967443 A CN2013100967443 A CN 2013100967443A CN 201310096744 A CN201310096744 A CN 201310096744A CN 103162839 A CN103162839 A CN 103162839A
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Abstract
The invention discloses a reading circuit for Nb5 N6 normal temperature Terahertz detector linear array. The reading circuit comprises a constant current bias providing module, a multichannel selection module and an amplifier and filter module. The constant current bias providing module is connected with the Nb5 N6 normal temperature Terahertz detector linear array, and is used for providing bias to the detector. The multichannel selection module is connected with the Nb5 N6 normal temperature Terahertz detector linear array, and is used for transforming multichannel output signals of the Nb5 N6 normal temperature Terahertz detector linear array into one channel signals. The amplifier and filter module is used for amplifying and filtering the one channel signals. The reading circuit not only has basic functions of signal amplification and multichannel transmission of common linear array reading circuits, but also has the advantage of low noise. The effective value of input noise is 5uV, the voltage spectrum density at white noise region is 15nV / Hz^2. The reading circuit plays an important role for Nb5 N6 normal temperature Terahertz detector linear array in specific applications of active imaging system and the like.
Description
Technical field
The invention belongs to the fields such as Terahertz detection and Detection of Weak Signals, be specifically related to a kind of sensing circuit of Terahertz detecting device linear array, more specifically relate to a kind of sensing circuit for Nb5N6 normal temperature Terahertz detecting device linear array, be expected to be applied to the Terahertz active imaging system.
Background technology
THz wave refers to that frequency is positioned at the electromagnetic wave between 0.1 ~ 10THz, and people also are subject to the restriction of several factors at present to the utilization of this wave band, develop highly sensitive, cost is low, the Terahertz detecting device of being convenient to application is also a focus of current Terahertz research.
Nb
5n
6normal temperature Terahertz detecting device belongs to micro-metering bolometer, adopts air bridge structure, by the antenna reception terahertz emission, produces thermal effect, changes the whole resistance of detecting device, thereby reaches the purpose of surveying terahertz emission.During actual the use, generally at the device two ends, add suitable constant biasing, under the THz source irradiation after modulation, the device two ends will produce periodic voltage signal.It is high that this detector has the voltage responsive rate, and low noise advantages is operated under room temperature environment, easy to use, for Terahertz detects, provides a kind of effective approach, and individual devices has obtained successful application in our Terahertz active imaging system.
But, in the active imaging system that adopts individual devices, often need complicated light path to complete the scanning to imaging object, system bulk is large, complex structure, strong to the dependence of light path precision, real-time is poor.For simplifying light path system, the reduction system volume, the real-time of raising system imaging, can be with reference to existing CCD and cmos image sensor, by a plurality of Nb
5n
6device is made array, in this case, develops corresponding array sensing circuit for Nb
5n
6the practice of array in the Terahertz active imaging system has great importance.
Summary of the invention
Goal of the invention: the problem and shortage existed for above-mentioned prior art the objective of the invention is according to Nb
5n
6the characteristics of normal temperature Terahertz detecting device, for a kind of high-gain of its Array Design, low noise, (serial) sensing circuit that the linearity is good, the basic function of realize that biasing provides, multipath transmission and signal amplifying, to being successfully applied to it Terahertz active imaging system.
Technical scheme: for achieving the above object, the technical solution used in the present invention is a kind of for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array comprises:
With Nb
5n
6the constant biasing that normal temperature Terahertz detecting device linear array is connected provides module, for to described detecting device, providing biasing;
With Nb
5n
6multichannel that normal temperature Terahertz detecting device linear array is connected is selected module, for by described Nb
5n
6the multipath output signals of normal temperature Terahertz detecting device linear array changes 1 road signal into;
Low noise amplification and filtration module, for described 1 road signal is amplified and filtering, be amplified to signal the scope needed, and improves signal to noise ratio (S/N ratio) simultaneously.
Further, described constant biasing provides module to comprise triode, divider resistance and current-limiting resistance, and the base stage of described triode connects divider resistance, and the level of penetrating of triode connects current-limiting resistance, and collector connects Nb
5n
6normal temperature Terahertz detecting device linear array.Preferably, described triode is the positive-negative-positive triode.Preferred, the model of described positive-negative-positive triode is S8550.
Further, described multichannel select module comprise integrated chip ADG506A and with the analog-and digital-channel attached protection diode of described chip ADG506A.
Further, described low noise amplification and filtration module amplify and filtration module for band is logical.Further, described low noise amplification and filtration module consist of three grades of circuit cascade successively: first order circuit comprises the source class follower consisted of the first field effect transistor (can be 2SK30), and the constant current source that the biasing of this circuit consists of the second field effect transistor (can be 2SK246) provides; Second level circuit comprises the amplifying circuit consisted of differential pair tube (can be 2SK146) and the first operational amplifier (can be OP42), the single order Hi-pass filter that the input end series connection of this circuit consists of the first resistance and the first electric capacity, the low-pass first order filter that in backfeed loop, series connection consists of the second resistance and the second electric capacity, the constant current source that the biasing of described differential pair tube (can be 2SK146) consists of the 3rd field effect transistor (can be 2SK246) provides; Tertiary circuit comprises the filtering circuit that first-order bandpass wave filter and second-order low-pass filter cascade form, and described first-order bandpass wave filter consists of the second operational amplifier.
Further, described constant biasing provides module and Nb
5n
6connection between normal temperature Terahertz detecting device linear array adopts fixed (Wire bonding) technique of nation.
Further, described Nb
5n
6normal temperature Terahertz detecting device linear array is 1 * 16 linear array, and it is 16 to select 1 module that described multichannel is selected module.
Beneficial effect: the present invention is according to Nb
5n
6the characteristics such as normal temperature Terahertz detector voltage responsiveness is high, noise is low, select suitable integrated chip, designed a kind of low noise sensing circuit that is applied to 1 * 16 linear array.Circuit can be Nb
5n
6normal temperature Terahertz detecting device provides adjustable constant biasing in 0.1 ~ 0.4mA scope, gain is designed to 10000 times, actual measured results is 6500 times, free transmission range is designed to 159Hz ~ 113kHz, actual measured results is 160Hz ~ 100kHz, adopt square-wave signal to be simulated the output waveform of practical detector, recording output signal drops to 70% of peak value and approximately needs 0.8ms, rise to 70% of peak value and approximately need 5us, the circuit output noise is white noise, in the scope of mainly be distributed in ± 100mV of amplitude, therefore the effective value of output noise is 30mV, be converted to input end, obtaining the input noise effective value is 5uV, by the output noise Voltage Spectral Density of measuring, distributed, obtain in the white noise part, the output voltage spectral density is
, be converted to input end and be
.The measurement result of system shows, this sensing circuit can successfully realize that biasing provides, multichannel is selected and the function such as signal amplification, and noise is lower, is applicable to Nb
5n
6normal temperature Terahertz detecting device linear array is used.
The accompanying drawing explanation
Fig. 1 is the sensing circuit the general frame;
Fig. 2 is single channel constant current bias circuit figure;
Fig. 3 is the ADG506A functional block diagram;
Fig. 4 is for amplifying and filtration module first order circuit diagram;
Fig. 5 is for amplifying and filtration module second level circuit diagram;
The circuit diagram that Fig. 6 (a) is the first-order bandpass wave filter in amplification and filtration module tertiary circuit, Fig. 6 (b) is the circuit diagram of the second-order low-pass filter in amplification and filtration module tertiary circuit;
The amplitude-frequency response figure that Fig. 7 is sensing circuit;
When Fig. 8 (a) is the input square wave, when sensing circuit output waveform schematic diagram fall time Fig. 8 (b) is the input square wave, sensing circuit output waveform rise time schematic diagram;
The oscillogram that Fig. 9 is the sensing circuit output noise;
The Voltage Spectral Density distribution plan that Figure 10 is the sensing circuit output noise.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
The present invention is according to Nb
5n
6the characteristics such as normal temperature Terahertz detector voltage responsiveness is high, noise is low, select suitable integrated chip, designed a kind of low noise sensing circuit that is applied to 1 * 16 linear array, its system chart as shown in Figure 1, mainly by constant biasing, provide module, multichannel to select module and low noise amplification and filtration module to form, embodiment is as follows.
Constant biasing provides module: this module is mainly to utilize when suitable biasing is provided to triode, and its collector current and penetrate that character that grade electric current is substantially equal designs is considered the convenience of system earth, has selected positive-negative-positive triode S8550.Fig. 2 has provided single channel constant current bias circuit figure, flows through Nb
5n
6the electric current of normal temperature Terahertz detecting device is
According to Nb
5n
6the requirement of Terahertz sensors work, select the resistance of suitable R1, R2 and Rs, and the design constant biasing is adjustable between 0.1mA ~ 0.4mA.It is 4 groups that 16 final road current sources are divided equally, and each group shares a base voltage biasing, and the electric current between on the same group is basic identical, and the electric current between does not on the same group differ in 0.02mA, and when pull-up resistor becomes 3k from 1k, electric current does not change substantially, meets Nb
5n
6the request for utilization of normal temperature Terahertz detecting device.
Multichannel is selected module: this functions of modules is mainly realized by chip ADG506A, at analog-and digital-passage, connects the protection diode, prevents from when voltage is excessive chip is caused to damage.ADG506A has very high switching speed and lower conducting resistance, and according to the device handbook, the representative value of its conducting resistance is 280 Ω, and be 300ns switching time, and leakage current is 20pA, is applicable to high-precision circuit and uses.Fig. 3 has provided the functional block diagram of ADG506A, the input pin of S1 ~ S16Wei 16 tunnel simulating signals, A0 ~ A3 and EN are the digital controlled signal input pin, D is the signal output pin, according to the gating truth table shown in table 1, when A0 ~ A3 and EN input the control signal of different conditions, ADG506A will export in 16 road input signals Ying mono-road signal in contrast, realize the multichannel selection function, and control signal can be produced by the minimum system programming of 51 single-chip microcomputers (this programming is that art technology understanding is known).
Low noise amplification and filtration module: this module mainly forms by three grades, and as shown in Figure 4, field effect transistor 2SK30 is connected into source class follower form to first order circuit, plays the impedance transformation effect, the carrying load ability of intensifier circuit.Field effect transistor 2SK246 is connected into the constant current source form, is used for providing biasing to 2SK30.
Second level circuit as shown in Figure 5, adopted extremely low noise differential pair tube 2SK146(as shown in the dotted line frame in Fig. 5) as input stage, field effect transistor 2SK246 is connected into the constant current source form, and being used for provides biasing to differential pair tube 2SK146, operational amplifier (being called for short " amplifier ") OP42 and R
7, R
8form the negative feedback path, capacitor C
3and resistance R
6for phase compensation, the gain of circuit is
, mainly by R
7and R
8determine, be designed to 100 times.R
3and C
2form the single order Hi-pass filter, cutoff frequency
, be designed to 159Hz, R
8and C
4form low-pass first order filter, cutoff frequency is designed to 159kHz.
Tertiary circuit is as shown in Fig. 6 (a) and Fig. 6 (b), and wherein Fig. 6 (a) is the first-order bandpass wave filter, the passband of design be 159Hz to 159kHz, amplifier OP42 is connected into in-phase amplifier form, passband gain
, be designed to 101 times.Fig. 6 (b) is second-order low-pass filter, cutoff frequency
, being designed to 113kHz, amplifier is connected into the voltage follower form, therefore passband gain is 1.
Input end in Fig. 4, Fig. 5, Fig. 6 (a) and Fig. 6 (b) is connected in turn with output terminal, and (wherein the input end of first order circuit is connected the output terminal that multichannel is selected module, the output termination subsequent conditioning circuit of tertiary circuit), can obtain whole low noise amplification and filtration module.Characteristic according to the amplifying circuit cascade, the gain of whole amplification and filtration module is about 10000 times, passband is that 159Hz is to 113kHz, multichannel is selected to module and this module phase cascade, as shown in Figure 7, the passband gain of measurement is 6500 times for the amplitude-frequency response recorded and theoretical value comparing result, and lower frequency limit is 160Hz, upper limiting frequency is 100kHz, and passband and the design load of circuit are basic identical.
The output signal of input square-wave signal simulation practical detector, record fall time of circuit and rise time respectively as shown in Fig. 8 (a) and Fig. 8 (b), signal after amplification drops to 70% of peak value approximately needs 0.8ms, and rising to 70% of peak value approximately needs 5us.
Select 16 tunnels of module to input whole ground connection multichannel, the circuit output noise of utilizing oscillograph to observe as shown in Figure 9, visible, output noise is white noise, meet Gaussian distribution, in the scope of mainly be distributed in ± 100mV of noise amplitude, therefore the effective value of output noise is 30mV, be converted to input end, the input noise effective value that obtains circuit is 5uV.The Voltage Spectral Density that utilizes dynamic signal analyzer to record output noise distributes as shown in figure 10, and in the white noise zone, the output noise Voltage Spectral Density is
, be converted to input end and be
.
Claims (9)
1. one kind for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array, is characterized in that, comprising:
With Nb
5n
6the constant biasing that normal temperature Terahertz detecting device linear array is connected provides module, for to described detecting device, providing biasing;
With Nb
5n
6multichannel that normal temperature Terahertz detecting device linear array is connected is selected module, for by described Nb
5n
6the multipath output signals of normal temperature Terahertz detecting device linear array changes 1 road signal into;
Low noise amplification and filtration module, for being amplified and filtering described 1 road signal.
2. according to claim 1 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array, it is characterized in that: described constant biasing provides module to comprise triode, divider resistance and current-limiting resistance, the base stage of described triode connects divider resistance, and the level of penetrating of triode connects current-limiting resistance, and collector connects Nb
5n
6normal temperature Terahertz detecting device linear array.
3. according to claim 2 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array is characterized in that: described triode is the positive-negative-positive triode.
4. according to claim 3 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array is characterized in that: the model of described positive-negative-positive triode is S8550.
5. according to claim 1 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array is characterized in that: described multichannel select module comprise integrated chip ADG506A and with the analog-and digital-channel attached protection diode of described chip ADG506A.
6. according to claim 1 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array is characterized in that: described low noise amplification and filtration module amplify and filtration module for band is logical.
7. according to claim 6 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array, it is characterized in that: described low noise amplification and filtration module consist of three grades of circuit cascade successively: first order circuit comprises the source class follower consisted of the first field effect transistor, and the constant current source that the biasing of this circuit consists of the second field effect transistor provides; Second level circuit comprises the amplifying circuit consisted of differential pair tube and the first operational amplifier, the single order Hi-pass filter that the input end series connection of this circuit consists of the first resistance and the first electric capacity, the low-pass first order filter that in backfeed loop, series connection consists of the second resistance and the second electric capacity, the constant current source that the biasing of described differential pair tube consists of the 3rd field effect transistor provides; Tertiary circuit comprises the filtering circuit that first-order bandpass wave filter and second-order low-pass filter cascade form, and described first-order bandpass wave filter consists of the second operational amplifier.
8. according to claim 1 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array, it is characterized in that: described constant biasing provides module and Nb
5n
6connection between normal temperature Terahertz detecting device linear array adopts nation to determine technique.
9. according to claim 1 for Nb
5n
6the sensing circuit of normal temperature Terahertz detecting device linear array, is characterized in that: described Nb
5n
6normal temperature Terahertz detecting device linear array is 1 * 16 linear array, and it is 16 to select 1 module that described multichannel is selected module.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310096744.3A CN103162839B (en) | 2013-03-25 | 2013-03-25 | Reading circuit for Nb5 N6 normal temperature Terahertz detector linear array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310096744.3A CN103162839B (en) | 2013-03-25 | 2013-03-25 | Reading circuit for Nb5 N6 normal temperature Terahertz detector linear array |
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| CN103162839A true CN103162839A (en) | 2013-06-19 |
| CN103162839B CN103162839B (en) | 2014-10-22 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103630245A (en) * | 2013-12-07 | 2014-03-12 | 哈尔滨威克科技有限公司 | Multielement linear array high-speed heat distribution imaging detector |
| CN105784123A (en) * | 2016-05-04 | 2016-07-20 | 南京大学 | Readout circuit used for normal temperature terahertz detector |
| CN109115332A (en) * | 2018-10-16 | 2019-01-01 | 苏州市职业大学 | A kind of self-mixing Terahertz linear array detector is read and display module |
| CN109541712A (en) * | 2018-11-30 | 2019-03-29 | 天津大学 | Based on periodic gate metal gate MOSFET terahertz detector |
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| US20010004328A1 (en) * | 1999-12-17 | 2001-06-21 | Trixell S.A.S. | Charge-reading circuit protected against overloads coming from charges with undesirable polarity |
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| CN109115332A (en) * | 2018-10-16 | 2019-01-01 | 苏州市职业大学 | A kind of self-mixing Terahertz linear array detector is read and display module |
| CN109541712A (en) * | 2018-11-30 | 2019-03-29 | 天津大学 | Based on periodic gate metal gate MOSFET terahertz detector |
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| CN103162839B (en) | 2014-10-22 |
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Granted publication date: 20141022 Termination date: 20170325 |