CN103151422A - Laser scribing method for improving generation power of thin film solar battery - Google Patents
Laser scribing method for improving generation power of thin film solar battery Download PDFInfo
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- CN103151422A CN103151422A CN2013100583763A CN201310058376A CN103151422A CN 103151422 A CN103151422 A CN 103151422A CN 2013100583763 A CN2013100583763 A CN 2013100583763A CN 201310058376 A CN201310058376 A CN 201310058376A CN 103151422 A CN103151422 A CN 103151422A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a laser scribing method for improving generation power of a thin film solar battery. The method is realized in a process that first laser scribing is carried out on a front electrode TCO (transparent conductive oxide) membranous layer, and second laser scribing is carried out on a PIN layer; the scribed depth of the first laser scribing is the thickness of the TCO membranous layer; a track is a path formed by connecting a group of unclosed curves; the inner part of each unclosed curve area formed in the first laser scribing is scribed in the second laser scribing; the scribed depth is the thicknesses of the PIN layer; and a scribing track is not communicated with the unclosed curves. With the adoption of the laser scribing method, sub-battery invalid power generation areas are reduced through changing a laser scribing manner of a sub battery, and partial areas in invalid power generation areas formed by scribing by applying the traditional laser scribing manner are changed into valid power generation areas, so that the power generation area of the whole battery is increased, the power generation power of the solar battery is improved, so that the laser scribing method is strong in practicability.
Description
Technical field
The invention belongs to the laser scribing lithography field in manufacture of solar cells, relate to and a kind ofly improve the technology of thin-film solar cells generated output to change connected mode between sub-battery by changing the laser ablation mode.
Background technology
Solar energy is the inexhaustible regenerative resources of the mankind. is also clean energy resource, do not produce any environmental pollution, therefore utilize solar power generation will become the development trend in the world.Thin-film solar cells is low, pollution-free owing to having a cost, and generating dutation is compared other solar cells and is not subjected to the advantages such as weather effect and extensively is applied.
Although thin-film solar cells has certain generated output,, do not increasing under material cost, need all the time the generated output of raising battery as far as possible, improve the practicality of battery.Under identical material cost, generated output is higher, and selling price is higher.
General film solar battery structure, the zone between laser ablation is invalid power generation region several times in each sub-battery, if this zone can be used, part becomes power generation region, will improve the generated output of whole battery.
Summary of the invention
The present invention reduces invalid power generation region to improve the thin-film solar cells generated output in order to solve, designed a kind of laser scribing carving method that improves the thin-film solar cells generated output, by changing the laser ablation mode of antithetical phrase battery, changed the connected mode between sub-battery, sub-battery inactive area is reduced, increase the power generation region of whole battery, improved whole electric power generation cell.
The technical solution used in the present invention is: a kind of laser scribing carving method that improves the thin-film solar cells generated output, this method is front electrode TCO rete to be carried out laser scribing for the first time, and P, I, N layer are being carried out realize in the process of laser scribing for the second time, key is: the etching depth of the described scribing of laser for the first time is the thickness of a TCO rete, and etching trace is a path that is connected to form by one group of non-closed curve; Etching is carried out in laser scribing each the non-enclosed curve regions inside that is engraved in that laser scribing for the first time becomes for the second time, and etching depth is the thickness of a PIN layer, and etching trace does not communicate with non-closed curve.
The invention has the beneficial effects as follows: the present invention is by changing the laser ablation mode of antithetical phrase battery, the invalid power generation region of sub-battery is reduced, the subregion of using in the invalid power generation region that traditional laser scribing mode scribing becomes is become effective power generation region, increased the power generation region of whole battery, improved the generated output of solar cell, practical, be conducive to battery and promote and sell, create more economic worths.
Description of drawings
Fig. 1 is the part-structure schematic diagram of thin-film solar cells.
Fig. 2 is the schematic diagram of the traditional formed invalid power generation region of laser scribing carving method.
Fig. 3 is the schematic diagram of the formed invalid power generation region of the inventive method.
The enforcement illustration of laser scribing track for the first time in Fig. 4 the present invention.
The enforcement illustration of laser scribing track for the second time in Fig. 5 the present invention.
In accompanying drawing, the 1st, glass substrate, the 2nd, front electrode TCO rete, the 3rd, P, I, N layer, the 4th, dorsum electrode layer, the 5th, laser scribing track for the first time, the 6th, laser scribing track for the second time, P represents invalid power generation region, the dash area in accompanying drawing 3 represents invalid power generation region.
Embodiment
A kind of laser scribing carving method that improves the thin-film solar cells generated output, this method is front electrode TCO rete 2 to be carried out laser scribing for the first time, and P, I, N layer 3 are being carried out realize in the process of laser scribing for the second time, importantly: the etching depth of the described scribing of laser for the first time is the thickness of a TCO rete, and etching trace is a path that is connected to form by one group of non-closed curve; Etching is carried out in laser scribing each the non-enclosed curve regions inside that is engraved in that laser scribing for the first time becomes for the second time, and etching depth is the thickness of a PIN layer, and etching trace does not communicate with non-closed curve.
Described non-closed curve is crest shape curve or radius curve or grooved curve.
The etching trace of laser scribing is circular or linear pattern or rectangle or arc for the second time.
The present invention in the specific implementation, carry out laser ablation for the first time on the glass substrate 1 of electrode TCO rete 2 before having, the degree of depth of this laser ablation is the thickness of a TCO rete, carry out (referring to accompanying drawing 4) along a path that is connected to form by one group of non-closed curve in etching process, form laser scribing track 5 for the first time; Then the TCO film surface is cleaned; Afterwards, utilize the plating of PECVD apparatus for plasma chemical vapor deposition P, I, N layer 3; Carry out laser ablation for the second time on P, I, N layer 3, etching depth is the thickness of a PIN layer, be that the etching degree of depth is to cutting off P, I, N layer 3, but do not cut off front electrode TCO rete 2, its etching position is in the formed non-closed curve track of the aforementioned scribing of laser for the first time, referring to accompanying drawing 5, carry out etching but be not connected with laser ablation track 5 for the first time in each non-closed curve, laser scribing track 6 as shown in Figure 5 for the second time, representing with the circular hole etching in figure, can be any shape; Then, the sputter dorsum electrode layer 4
,The dorsum electrode layer 4 of sputter will be filled up in the cutting of laser scribing for the second time, connect front electrode TCO rete 2 and dorsum electrode layer 4 with this; Then, carry out traditional sub-battery of division technique, and follow-up flash trimming, be external to the processing step such as line, until complete the course of processing of thin-film solar cells.
The method of above-mentioned twice laser scribing is compared with traditional laser scribing carving method, and its invalid power generation region P has reduced greatly, referring to accompanying drawing 2 and 3, has wherein represented the formed invalid power generation region of the present invention with dash area in accompanying drawing 3.As seen, the inventive method can become effective power generation region with the partial invalidity power generation region in Fig. 2 effectively, has increased the power generation region of whole battery, has improved the generated output of solar cell, and is practical.
Claims (3)
1. laser scribing carving method that improves the thin-film solar cells generated output, this method is front electrode TCO rete (2) to be carried out laser scribing for the first time, and P, I, N layer (3) are being carried out realize in the process of laser scribing for the second time, it is characterized in that: the etching depth of the described scribing of laser for the first time is the thickness of a TCO rete, and etching trace is a path that is connected to form by one group of non-closed curve; Etching is carried out in laser scribing each the non-enclosed curve regions inside that is engraved in that laser scribing for the first time becomes for the second time, and etching depth is the thickness of a PIN layer, and etching trace does not communicate with non-closed curve.
2. a kind of laser scribing carving method that improves the thin-film solar cells generated output according to claim 1, it is characterized in that: described non-closed curve is crest shape curve or radius curve or grooved curve.
3. a kind of laser scribing carving method that improves the thin-film solar cells generated output according to claim 1 is characterized in that: the etching trace of laser scribing is circular or linear pattern or rectangle or arc for the second time.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013100583763A CN103151422A (en) | 2013-02-25 | 2013-02-25 | Laser scribing method for improving generation power of thin film solar battery |
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| CN2013100583763A CN103151422A (en) | 2013-02-25 | 2013-02-25 | Laser scribing method for improving generation power of thin film solar battery |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010008604A1 (en) * | 2008-07-18 | 2010-01-21 | Solyndra, Inc. | Elongated semiconductor devices and methods of making the same |
| US20100087025A1 (en) * | 2008-10-07 | 2010-04-08 | Yung-Yuan Chang | Method for defect isolation of thin-film solar cell |
| WO2010144165A1 (en) * | 2009-06-12 | 2010-12-16 | Applied Materials, Inc. | Cell isolation on photovoltaic modules for hot spot reduction |
| CN202736954U (en) * | 2012-06-27 | 2013-02-13 | 国电光伏(江苏)有限公司 | Point contact type high-efficiency thin-film solar component |
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2013
- 2013-02-25 CN CN2013100583763A patent/CN103151422A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010008604A1 (en) * | 2008-07-18 | 2010-01-21 | Solyndra, Inc. | Elongated semiconductor devices and methods of making the same |
| US20100087025A1 (en) * | 2008-10-07 | 2010-04-08 | Yung-Yuan Chang | Method for defect isolation of thin-film solar cell |
| WO2010144165A1 (en) * | 2009-06-12 | 2010-12-16 | Applied Materials, Inc. | Cell isolation on photovoltaic modules for hot spot reduction |
| CN202736954U (en) * | 2012-06-27 | 2013-02-13 | 国电光伏(江苏)有限公司 | Point contact type high-efficiency thin-film solar component |
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Effective date of registration: 20140319 Address after: 610200 Sichuan city of Chengdu province Shuangliu County West Port Economic Development Zone and two Hua Road No. 1518 Applicant after: CHENGDU XUSHUANG SOLAR TECHNOLOGY CO., LTD. Address before: 050000 Zhujiang Road, high tech Zone, Hebei, Shijiazhuang, China, No. 369 Applicant before: Tungsu Group Co., Ltd. Applicant before: Chengdu Taiyisi Solar Technology Co., Ltd. |
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Application publication date: 20130612 |