CN103151168B - A kind of nickel substrate for thin film capacitor - Google Patents
A kind of nickel substrate for thin film capacitor Download PDFInfo
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- CN103151168B CN103151168B CN201310066034.6A CN201310066034A CN103151168B CN 103151168 B CN103151168 B CN 103151168B CN 201310066034 A CN201310066034 A CN 201310066034A CN 103151168 B CN103151168 B CN 103151168B
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- Prior art keywords
- weight
- film capacitor
- thin film
- substrate
- nickel substrate
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000003990 capacitor Substances 0.000 title claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000004411 aluminium Substances 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 239000011651 chromium Substances 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- 239000011572 manganese Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 238000005096 rolling process Methods 0.000 description 9
- 239000011888 foil Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
Abstract
The invention discloses a kind of nickel substrate for thin film capacitor, described nickel substrate for thin film capacitor, according to weight percent meter, has the material of following proportioning: the content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
Description
Technical field
The invention belongs to film capacitor field, particularly relate to a kind of nickel substrate for thin film capacitor.
Background technology
In existing film capacitor, owing to having higher requirement to the capacitance of capacitor.In prior art, film capacitor generally comprises substrate, dielectric layer and electrode layer.The microstructure of dielectric layer is the key factor determining capacitor performance.Therefore, the material structure for film capacitor substrate has strict requirement.
Existing film capacitor substrate has employing metallic nickel to form more.In order to not affect the performance of capacitor while improving capacitance, the purity of ni substrate and impurity are formed just can not be ignored.If containing less desirable impurity in ni substrate, or its purity is not enough, the capacitance of restriction film capacitor is improved, and may increase its Leakage Current, thus affect the quality of film capacitor.
Summary of the invention:
The present invention is directed in prior art the film capacitor Problems existing adopting metallic nickel as substrate, propose a kind of ni substrate containing trace impurity, thus not affecting under the prerequisite improving capacitance, obtain the film capacitor of superior performance.
The nickel substrate for thin film capacitor that the present invention proposes, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
Embodiment:
Below by embodiment, the present invention is described in detail.
Nickel substrate for thin film capacitor, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
Introduce the manufacture method of this nickel substrate for thin film capacitor below, described method in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) third time rolling, carries out third time rolling to the ni substrate paillon foil of step (5) gained, and obtain the less paillon foil of thickness after third time rolling, its thickness is 100-300 micron, preferably 200 microns.
(7) third time thermal annealing, the ni substrate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 650-700 DEG C, and annealing time is 30 minutes;
(8) manufacture of ni substrate is completed after the ni substrate paillon foil of step (7) gained being determined the size of needs.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (1)
1. a nickel substrate for thin film capacitor, is characterized in that:
Described nickel substrate for thin film capacitor, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight, all the other 0.02 % by weight are plurality of impurities, described plurality of impurities comprises: the tantalum of the iron of the aluminium of the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight, the antimony of 0.001-0.002 % by weight and 0.001-0.002 % by weight
The thickness of described nickel substrate for thin film capacitor is 100-300 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066034.6A CN103151168B (en) | 2013-03-01 | 2013-03-01 | A kind of nickel substrate for thin film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066034.6A CN103151168B (en) | 2013-03-01 | 2013-03-01 | A kind of nickel substrate for thin film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103151168A CN103151168A (en) | 2013-06-12 |
| CN103151168B true CN103151168B (en) | 2016-01-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310066034.6A Active CN103151168B (en) | 2013-03-01 | 2013-03-01 | A kind of nickel substrate for thin film capacitor |
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| Country | Link |
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| CN (1) | CN103151168B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988084A (en) * | 2005-12-20 | 2007-06-27 | Tdk株式会社 | Dielectric element and method for manufacturing the same |
| CN101663711A (en) * | 2007-04-25 | 2010-03-03 | 费罗公司 | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom |
| CN102460619A (en) * | 2009-04-28 | 2012-05-16 | 纳幕尔杜邦公司 | Thin film capacitor and method of fabrication thereof |
| CN101047067B (en) * | 2006-03-30 | 2012-06-20 | Tdk株式会社 | Thin film capacitor and method of manufacturing the thin film capacitor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010045208A (en) * | 2008-08-13 | 2010-02-25 | Mitsui Mining & Smelting Co Ltd | Capacitor layer forming material |
-
2013
- 2013-03-01 CN CN201310066034.6A patent/CN103151168B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988084A (en) * | 2005-12-20 | 2007-06-27 | Tdk株式会社 | Dielectric element and method for manufacturing the same |
| CN101047067B (en) * | 2006-03-30 | 2012-06-20 | Tdk株式会社 | Thin film capacitor and method of manufacturing the thin film capacitor |
| CN101663711A (en) * | 2007-04-25 | 2010-03-03 | 费罗公司 | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom |
| CN102460619A (en) * | 2009-04-28 | 2012-05-16 | 纳幕尔杜邦公司 | Thin film capacitor and method of fabrication thereof |
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|---|---|
| CN103151168A (en) | 2013-06-12 |
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