CN103151167B - Method for manufacturing nickel substrate for thin film capacitor - Google Patents
Method for manufacturing nickel substrate for thin film capacitor Download PDFInfo
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- CN103151167B CN103151167B CN201310065918.XA CN201310065918A CN103151167B CN 103151167 B CN103151167 B CN 103151167B CN 201310065918 A CN201310065918 A CN 201310065918A CN 103151167 B CN103151167 B CN 103151167B
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Abstract
The invention discloses a method for manufacturing a nickel substrate for a film capacitor, which comprises the following steps of: greater than or equal to 99.98 wt.% nickel ingot, 0.001 to 0.002 wt.% copper, 0.0005 to 0.0008 wt.% manganese, 0.005 to 0.008 wt.% aluminum, 0.0005 to 0.001 wt.% chromium, 0.004 to 0.006 wt.% iron, 0.0005 to 0.0012 wt.% silicon, and 0.001 to 0.002 wt.% antimony and 0.001 to 0.002 wt.% tantalum; and then, the nickel base plate with the proper thickness is finally obtained through three times of rolling and three times of thermal annealing.
Description
Technical field
The invention belongs to film capacitor field, particularly relate to a kind of manufacture method of nickel substrate for thin film capacitor.
Background technology
In existing film capacitor, owing to having higher requirement to the capacitance of capacitor.In prior art, film capacitor generally comprises substrate, dielectric layer and electrode layer.The microstructure of dielectric layer is the key factor determining capacitor performance.Therefore, the material structure for film capacitor substrate has strict requirement.
Existing film capacitor substrate has employing metallic nickel to form more.In order to not affect the performance of capacitor while improving capacitance, the purity of ni substrate and impurity are formed just can not be ignored.If containing less desirable impurity in ni substrate, or its purity is not enough, the capacitance of restriction film capacitor is improved, and may increase its Leakage Current, thus affect the quality of film capacitor.
Summary of the invention:
The present invention is directed in prior art the film capacitor Problems existing adopting metallic nickel as substrate, propose a kind of manufacture method of the ni substrate containing trace impurity, thus not affecting under the prerequisite improving capacitance, obtain the film capacitor of superior performance.
The manufacture method that the present invention proposes, in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) third time rolling, carries out third time rolling to the ni substrate paillon foil of step (5) gained, and obtain the less paillon foil of thickness after third time rolling, its thickness is 100-300 micron, preferably 200 microns.
(7) third time thermal annealing, the ni substrate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 650-700 DEG C, and annealing time is 30 minutes;
(8) manufacture of ni substrate is completed after the ni substrate paillon foil of step (7) gained being determined the size of needs.
Embodiment:
Below by embodiment, the present invention is described in detail.
The manufacture method of nickel substrate for thin film capacitor, described method in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) third time rolling, carries out third time rolling to the ni substrate paillon foil of step (5) gained, and obtain the less paillon foil of thickness after third time rolling, its thickness is 100-300 micron, preferably 200 microns.
(7) third time thermal annealing, the ni substrate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 650-700 DEG C, and annealing time is 30 minutes;
(8) manufacture of ni substrate is completed after the ni substrate paillon foil of step (7) gained being determined the size of needs.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (1)
1. a manufacture method for nickel substrate for thin film capacitor, in turn includes the following steps:
(1) raw material of following proportioning is prepared: the tantalum being more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight, the antimony of 0.001-0.002 % by weight and 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) third time rolling, carries out third time rolling to the ni substrate paillon foil of step (5) gained, obtains the paillon foil that thickness is 100-300 micron after third time rolling;
(7) third time thermal annealing, the ni substrate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 650-700 DEG C, and annealing time is 30 minutes;
(8) manufacture of ni substrate is completed after the ni substrate paillon foil of step (7) gained being determined the size of needs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065918.XA CN103151167B (en) | 2013-03-01 | 2013-03-01 | Method for manufacturing nickel substrate for thin film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065918.XA CN103151167B (en) | 2013-03-01 | 2013-03-01 | Method for manufacturing nickel substrate for thin film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103151167A CN103151167A (en) | 2013-06-12 |
| CN103151167B true CN103151167B (en) | 2016-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310065918.XA Active CN103151167B (en) | 2013-03-01 | 2013-03-01 | Method for manufacturing nickel substrate for thin film capacitor |
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| CN (1) | CN103151167B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254934A (en) * | 1998-11-23 | 2000-05-31 | 微涂层技术公司 | Formation of thin-film capacitor |
| CN1974118A (en) * | 2005-11-28 | 2007-06-06 | 镇江鼎胜铝业有限公司 | Aluminium strip for capacitor shell |
| CN101047067B (en) * | 2006-03-30 | 2012-06-20 | Tdk株式会社 | Thin film capacitor and method of manufacturing the thin film capacitor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8414962B2 (en) * | 2005-10-28 | 2013-04-09 | The Penn State Research Foundation | Microcontact printed thin film capacitors |
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2013
- 2013-03-01 CN CN201310065918.XA patent/CN103151167B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254934A (en) * | 1998-11-23 | 2000-05-31 | 微涂层技术公司 | Formation of thin-film capacitor |
| CN1974118A (en) * | 2005-11-28 | 2007-06-06 | 镇江鼎胜铝业有限公司 | Aluminium strip for capacitor shell |
| CN101047067B (en) * | 2006-03-30 | 2012-06-20 | Tdk株式会社 | Thin film capacitor and method of manufacturing the thin film capacitor |
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| Publication number | Publication date |
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| CN103151167A (en) | 2013-06-12 |
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Effective date of registration: 20190823 Address after: 430000 Hubei Province Wuhan Hongshan District Donghu New Technology Development Zone Laowu-Huanghe Highway 206 Huigu Space-time Building 705, 706A Patentee after: Wuhan Tuozhijia Information Technology Co., Ltd. Address before: Liyang City, Jiangsu province 213300 Changzhou City Dai Town West Industrial Road No. 8 Patentee before: Liyang Huajing Electronic Material Co., Ltd. |
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Effective date of registration: 20191206 Address after: 314000 Building 2, No. 168, dianzhuang section, Yanjia highway, Wanghai street, Haiyan County, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Hengtai Metal Technology Co., Ltd. Address before: 430000 Hubei Province Wuhan Hongshan District Donghu New Technology Development Zone Laowu-Huanghe Highway 206 Huigu Space-time Building 705, 706A Patentee before: Wuhan Tuozhijia Information Technology Co., Ltd. |
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Effective date of registration: 20220525 Address after: 453000 No. 19, Henan inspection and testing industrial park, plain demonstration area, Xinxiang City, Henan Province Patentee after: HENAN HUJIA NEW MATERIAL TECHNOLOGY CO.,LTD. Address before: 314000 Building 2, No.168 dianzhuang section of Yanjia highway, Wanghai street, Haiyan County, Jiaxing City, Zhejiang Province Patentee before: Jiaxing Hengtai Metal Technology Co.,Ltd. |