A kind of manufacture method with the film capacitor of composite base plate
Technical field
The invention belongs to film capacitor field, particularly relate to a kind of manufacture method with the film capacitor of composite base plate.
Background technology
In existing film capacitor, owing to having higher requirement to the capacitance of capacitor.In prior art, film capacitor generally comprises substrate, dielectric layer and electrode layer.The microstructure of dielectric layer is the key factor determining capacitor performance.Therefore, the material structure for film capacitor substrate has strict requirement.
Existing film capacitor substrate has employing metallic nickel to form more.In order to not affect the performance of capacitor while improving capacitance, the purity of ni substrate and impurity are formed just can not be ignored.If containing less desirable impurity in ni substrate, or its purity is not enough, the capacitance of restriction film capacitor is improved, and may increase its Leakage Current, thus affect the quality of film capacitor.
And film capacitor generally all combines on a printed circuit by embedding form, and the line pattern of existing printed circuit board (PCB) is generally all made up of metallic copper, and therefore, existing ni substrate film capacitor is combined with printed circuit board (PCB) still has defect.
Summary of the invention
The present invention is directed in prior art the film capacitor Problems existing adopting metallic nickel as substrate, propose a kind of manufacture method with the film capacitor of composite base plate, thus improve the performance of film capacitor, and can better be combined with printed circuit board (PCB).
The manufacture method with the film capacitor of composite base plate in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel of 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) ni substrate of step (5) gained is fitted to purity be 99.999% copper base on carry out third time rolling, form the composite base plate paillon foil that thickness is 200-300 micron after rolling;
(7) third time thermal annealing, the composite base plate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 700-800 DEG C, and annealing time is 30 minutes;
(8) according to Tetragonal lead zirconate titanate PbZr
1-xti
xo
3molar ratio be configured lead oxide PbO, zirconium dioxide ZrO
2with titanium dioxide TiO
2powder is calcined, thus sinters PZT target into, and wherein x value is: 0<x<1, and preferred x is 0.05≤x≤0.85; Wherein calcining heat is 950 DEG C-1200 DEG C, and calcination time is 2.5-3 hour;
(9) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, PZT target as sputter is deposited on the composite base plate paillon foil of step (7) gained in inert gas environment; Thus form PbZr
1-xti
xo
3dielectric layer; The thickness of this dielectric layer is 1-5 micron, preferably 2 microns;
(10) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, thus form electrode layer, the thickness of this electrode layer is 100-200 micron, preferably 120 microns in inert gas environment by metal material sputtering sedimentation on said dielectric layer;
Wherein, in step (9) and (10), the vacuum degree of rf magnetron sputtering reative cell is all 10
-5pascal; And in step (9), the radio-frequency power of rf magnetron sputtering is 150-200W, sputtering time is 60 minutes; In step (10), the radio-frequency power 100-150W of rf magnetron sputtering, sputtering time is 120 minutes.
Accompanying drawing explanation
The structural representation with the film capacitor of composite base plate of Fig. 1 obtained by the manufacture method that proposes for the present invention.
Embodiment
Below by embodiment, the present invention is described in detail.
Embodiment 1:
See Fig. 1, the manufacture method with the film capacitor of composite base plate in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel of 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) ni substrate of step (5) gained is fitted to purity be 99.999% copper base on carry out third time rolling, form the composite base plate paillon foil that thickness is 200-300 micron after rolling;
(7) third time thermal annealing, the composite base plate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 700-800 DEG C, and annealing time is 30 minutes;
(8) according to Tetragonal lead zirconate titanate PbZr
1-xti
xo
3molar ratio be configured lead oxide PbO, zirconium dioxide ZrO
2with titanium dioxide TiO
2powder is calcined, thus sinters PZT target into, and wherein x value is: 0<x<1, and preferred x is 0.05≤x≤0.85; Wherein calcining heat is 950 DEG C-1200 DEG C, and calcination time is 2.5-3 hour;
(9) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, PZT target as sputter is deposited on the composite base plate paillon foil of step (7) gained in inert gas environment; Thus form PbZr
1-xti
xo
3dielectric layer; The thickness of this dielectric layer is 1-5 micron, preferably 2 microns;
(10) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, thus form electrode layer, the thickness of this electrode layer is 100-200 micron, preferably 120 microns in inert gas environment by metal material sputtering sedimentation on said dielectric layer;
Wherein, in step (9) and (10), the vacuum degree of rf magnetron sputtering reative cell is all 10
-5pascal; And in step (9), the radio-frequency power of rf magnetron sputtering is 150-200W, sputtering time is 60 minutes; In step (10), the radio-frequency power 100-150W of rf magnetron sputtering, sputtering time is 120 minutes.
It should be noted that, in the composite base plate for thin-film capacitor that the present invention proposes, do not limit the thickness proportion of copper base and ni substrate, various thickness proportion is all suitable (thickness proportion of such as copper base and ni substrate is 1:1,1:2,1:3,2:3 etc.), as long as this composite base plate is combined into by copper base and ni substrate.That is, as long as the thickness of composite base plate reaches requirement, it accounts for the percentage of composite base plate gross thickness respectively without the need to specifically limiting copper base and ni substrate, because those skilled in the art can distribute the thickness of copper base and ni substrate according to actual needs, to tackle various different occasion.
Embodiment 2:
See Fig. 1, the manufacture method with the film capacitor of composite base plate in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel of 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 4 millimeters;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 700 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1.8 millimeters;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 700 DEG C, and annealing time is 40 minutes;
(6) ni substrate of step (5) gained is fitted to purity be 99.999% copper base on carry out third time rolling, form the composite base plate paillon foil that thickness is 240 microns after rolling;
(7) third time thermal annealing, the composite base plate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 750 DEG C, and annealing time is 30 minutes;
(8) according to Tetragonal lead zirconate titanate PbZr
1-xti
xo
3molar ratio be configured lead oxide PbO, zirconium dioxide ZrO
2with titanium dioxide TiO
2powder is calcined, thus sinters PZT target into, and wherein x value is: 0<x<1, and preferred x is 0.05≤x≤0.85; Wherein calcining heat is 1100 DEG C, and calcination time is 160 minutes;
(9) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, PZT target as sputter is deposited on the composite base plate paillon foil of step (7) gained in inert gas environment; Thus form PbZr
1-xti
xo
3dielectric layer; The thickness of this dielectric layer is 1-5 micron, preferably 2 microns;
(10) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, thus form electrode layer, the thickness of this electrode layer is 100-200 micron, preferably 120 microns in inert gas environment by metal material sputtering sedimentation on said dielectric layer;
Wherein, in step (9) and (10), the vacuum degree of rf magnetron sputtering reative cell is all 10
-5pascal; And in step (9), the radio-frequency power of rf magnetron sputtering is 150-200W, sputtering time is 60 minutes; In step (10), the radio-frequency power 100-150W of rf magnetron sputtering, sputtering time is 120 minutes.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.