CN103145092A - Nano etching seal and method for carrying out nano etching by utilizing nano etching seal - Google Patents
Nano etching seal and method for carrying out nano etching by utilizing nano etching seal Download PDFInfo
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- CN103145092A CN103145092A CN2013100625520A CN201310062552A CN103145092A CN 103145092 A CN103145092 A CN 103145092A CN 2013100625520 A CN2013100625520 A CN 2013100625520A CN 201310062552 A CN201310062552 A CN 201310062552A CN 103145092 A CN103145092 A CN 103145092A
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Abstract
The invention provides a nano etching seal. The nano etching seal comprises a seal body, a protective layer and a metal catalysis layer, wherein the bottom surface of the seal body is provided with an inverted graph of a nano graph to be processed; the protective layer is at least formed on the surface of the part of the seal body in contact with corrosion liquid and is made from a material resistant to corrosion liquid; and the metal catalysis layer is at least formed on the protective layer above the part of the inverted graph in contact with a substrate to be etched and is made from a material which can catalyze reaction between the corrosion liquid and the substrate to be etched. According to the nano etching seal and the method for carrying out nano etching by utilizing the nano etching seal, the require nano structure is prepared in advance on the seal body, the graph can be directly transferred onto the surface of the substrate by a metal catalysis corrosion means, a graphical process is simple, and no mask layer is arranged, so that a technological process for preparing a nano structure is simplified.
Description
Technical field
The present invention relates to semicon industry micro-processing technology field, relate in particular to a kind of nanometer etching seal and utilize it to carry out the method for nanometer etching.
Background technology
Carrying out the micro-nano graph transfer at silicon face is one of core process in semiconductor processing technology.The figure that pre-defines is transferred on silicon chip surface with certain thickness, and semiconductor electricity character, mechanical performance and the chemical characteristic that can take full advantage of silicon realize the specific function of micro-nano structure.
Generally realize the figure processing of silicon face by dry etching and two kinds of means of wet etching.Define patterned mask by means such as photoetching at silicon chip surface, then realize shifting at the figure of silicon face by the anti-etching or resistance to corrosion of mask.The degree of depth that the time of reacting by control is controlled etching finally realizes the preparation of micro-nano structure on the controlled silicon of the degree of depth.The shortcoming of dry etching and wet etching is that these two kinds of methods all want the predefined mask, and after figure shifts successfully, mask needs in time to remove, it is a kind of disposable patterned structures, service efficiency is low, and needs repeatedly by photoetching, and the means such as electron beam exposure form mask graph, complex process, efficient is low.
Summary of the invention
The technical problem that (one) will solve
For solving above-mentioned one or more problems, the invention provides a kind of nanometer etching seal and utilize it to carry out the method for nanometer etching.
(2) technical scheme
According to an aspect of the present invention, provide a kind of nanometer etching seal.This nanometer etching seal comprises: seal body, its bottom surface have the anti-phase figure of nano graph to be processed; Protective layer is formed at the surface of seal body and corrosive liquid contact portion at least, and its material is the material of anticorrosive liquid; And metal catalytic layer, be formed at least on the protective layer of anti-phase figure and substrate contact to be etched part, but its material is the material of catalyzed corrosion liquid and substrate to be etched reaction.
According to another aspect of the present invention, also provide a kind of method of utilizing above-mentioned nanometer etching seal to carry out the nanometer etching.The method comprises: the corrosive liquid of configuration substrate to be etched; In the flat immersion of substrate to be etched corrosive liquid; Nanometer etching seal is pressed on silicon chip to be etched, and the metal catalytic layer of nanometer etching seal contacts with the surface of substrate to be etched; And etching substrate to be etched takes out nanometer etching seal and substrate to be etched to predetermined depth from corrosive liquid.
(3) beneficial effect
Can find out nanometer etching seal of the present invention and utilize its method of carrying out the nanometer etching to have following beneficial effect from technique scheme:
(1) prepared in advance the nanostructured that needs on seal body, can directly figure have been transferred to substrate surface by the means that metal catalytic corrodes, graphical process is simple, need not additional mask layer, has simplified the technological process of nanostructured preparation;
(2) metal catalytic layer is fixed on seal body, after corrosion process finished, metal catalytic layer did not have loss, still can continue to corrode the sheet surface of other batches, had the nonexpondable advantage of circulation;
(3) seal body is made of magnetic material, can provide contact by the external magnetic field, has guaranteed the stability in the nanostructured preparation process.
Description of drawings
Fig. 1 is stereogram and the sectional view according to the nanometer etching seal of the embodiment of the present invention;
Fig. 2 is the flow chart according to the nanometer lithographic method of the embodiment of the present invention.
[main element symbol description of the present invention]
The 10-seal body; The 20-protective layer;
The 30-metal catalytic layer.
The specific embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Need to prove, in accompanying drawing or specification description, similar or identical part is all used identical figure number.The implementation that does not illustrate in accompanying drawing or describe is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although this paper can provide the demonstration of the parameter that comprises particular value, should be appreciated that, parameter need not definitely to equal corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.In addition, the direction term of mentioning in following examples, such as " on ", D score, 'fornt', 'back', " left side ", " right side " etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is to illustrate not to be to limit the present invention.
Nanometer etching seal of the present invention is fixed on metal catalytic layer on the seal body that contains nanostructured one side by protective layer.Principle based on the metal catalytic corrosion, in the environment of corrosive liquid, the metal catalytic layer of projection contacts with silicon chip, at the interface that metal catalytic layer contacts with silicon, electronics in silicon is easily obtained by some precious metal atom, and finally is delivered in corrosive liquid, the liquid consumption that is corroded of corresponding silicon atom, after experiencing one period reaction time, can form the silicon structure of certain depth.
In one exemplary embodiment of the present invention, provide a kind of nanometer etching seal for the preparation of silicon chip surface nanostructured.As shown in Figure 1, this nanometer etching seal comprises: seal body 10, its bottom surface have the anti-phase figure of nano graph to be processed; Protective layer 20 is formed at the surface of described seal body 10 and corrosive liquid contact portion at least, is the material of anti-silicon etch solution; Metal catalytic layer 30 is formed on the protective layer of described anti-phase figure and silicon chip contact portion to be etched at least, but the material of catalyzed corrosion liquid and substrate to be etched reaction is for example precious metal material.
Below respectively each part of the present embodiment silicon etching seal is elaborated.
The material of seal body 10 is the magnetic materials such as iron, cobalt, nickel.This magnetic material can be in conjunction with the magnetic field that applies in external environment condition, and the anti-phase figure that makes seal more closely, stably contact with silicon chip surface promotes the carrying out of catalyzed corrosion.
The bottom surface of seal body 10 has the anti-phase figure of nano graph to be processed.By controlling and the silicon contact and figure pattern metal catalytic layer corresponding to this reverse figure, can obtain the silicon structure of complementary pattern after the corrosion end.
In seal shown in Figure 1, protective layer 20 is covered on whole seal body 10.It will be apparent to those skilled in the art that it only is a preferred version of the present invention.In the present invention, as long as guarantee seal body and corrosive liquid contact portion matcoveredn, thereby avoid seal body directly to contact with corrosive liquid, reach the purpose of protection seal body.
For silicon etching, its corrosive liquid is generally hydrofluoric acid solution.Therefore, protective layer 20 should be the material of anti-hydrofluoric acid solution corrosion, for example Parylene, hexamethyl siloxanes, polyimides etc.
Metal catalytic layer 30 is formed on the protective layer of the anti-phase figure of nano graph to be processed, and its material is the noble metals such as gold, platinum.Metal catalytic layer is fixed on the seal body of making by protective layer.Principle based on the metal catalytic corrosion, in the environment of corrosive liquid, the metal catalytic layer of projection contacts with silicon chip, at the interface that metal catalytic layer contacts with silicon, electronics in silicon is easily obtained by some precious metal atom, and finally is delivered in corrosive liquid, the liquid consumption that is corroded of corresponding silicon atom, after experiencing one period reaction time, can form the silicon structure of certain depth.By controlling etching time, can control the degree of depth of figure.There is not consumption problem in metal catalytic layer on seal in course of reaction, reusable.
So far, the present embodiment nanometer etching seal is introduced complete.Those skilled in the art should have clearly understanding to nanometer etching seal of the present invention according to top description.
Based on above-mentioned nanometer etching seal, the present invention also provides a kind of and has utilized above-mentioned nanometer etching seal to carry out the method for nanometer etching.Please refer to Fig. 2, the present embodiment method comprises the following steps:
Steps A, configuration hydrofluoric acid corrosive liquid, the concentration of this hydrofluoric acid corrosive liquid is generally 40%, and those skilled in the art can adjust as required;
Step B places magnet below the corrosive liquid container bottoms, this magnet can be common magnet or electromagnet;
Step C keeps flat silicon chip to be etched in the corrosive liquid container, immerses in corrosive liquid;
Step D is pressed in nanometer etching seal on silicon chip to be etched, and metal catalytic layer 30 contacts with the surface of silicon chip to be etched, and because seal body 10 is made for magnetic material, therefore, the anti-phase figure on seal body can be tight, stable is pressed in silicon chip surface;
Step e by controlling etching time, is controlled the degree of depth of nano graph to be processed, and wherein, this etching time is relevant with factors such as corrosive liquid concentration, temperature, can measure by experiment in advance.
So far, the present embodiment nanometer etching mode is introduced complete.
Need to prove, although above-described embodiment all silicon chip is carried out etching as example describes, it will be understood by those skilled in the art that it is equally applicable to the backing material of other types, for example: GaN material, germanium material etc., corresponding corrosive liquid also can change with the difference of material.The current techique that these are in this area repeats no more herein.
Explanation by above-mentioned two embodiment, as seen, nanometer etching seal of the present invention and utilize its method of carrying out the nanometer etching can repeat a plurality of silicon chip surfaces are carried out selective etch, the control of disposable realization to the graphical and degree of depth of nanostructured, have repeatability, accuracy and to the advantages such as alternative of the transition diagram degree of depth, for the nanoprocessing field provides brand-new figure transfering means.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a nanometer etching seal, is characterized in that, comprising:
Seal body, its bottom surface have the anti-phase figure of nano graph to be processed;
Protective layer is formed at the surface of described seal body and corrosive liquid contact portion at least, and its material is the material of anticorrosive liquid; And
Metal catalytic layer is formed on the protective layer of described anti-phase figure and substrate contact to be etched part at least, but its material is the material of catalyzed corrosion liquid and substrate to be etched reaction.
2. nanometer etching seal according to claim 1, is characterized in that, the material of described seal body is magnetic material.
3. nanometer etching seal according to claim 2, is characterized in that, described magnetic material is iron, cobalt or nickel.
4. nanometer etching seal according to claim 1, is characterized in that, the material of described protective layer is Parylene, hexamethyl siloxanes or polyimides.
5. nanometer etching seal according to claim 1, is characterized in that, but the material of described catalyzed corrosion liquid and substrate to be etched reaction is gold or platinum.
6. the described nanometer etching of any one seal according to claim 1 to 5, is characterized in that, described substrate is: silicon substrate, germanium substrate or gallium nitride substrate, described corrosive liquid are the corrosive liquid corresponding to this substrate.
7. nanometer etching seal according to claim 6, is characterized in that, described substrate is silicon substrate, and described corrosive liquid is hydrofluoric acid solution.
8. a method of utilizing the described nanometer etching of any one seal in claim 1 to 7 to carry out the nanometer etching, is characterized in that, comprising:
Configure the corrosive liquid of substrate to be etched;
In the described corrosive liquid of the flat immersion of substrate to be etched;
Described nanometer etching seal is pressed on silicon chip to be etched, and the metal catalytic layer of described nanometer etching seal contacts with the surface of substrate to be etched; And
The described substrate to be etched of etching takes out described nanometer etching seal and substrate to be etched to predetermined depth from corrosive liquid.
9. method according to claim 8, is characterized in that, the material of described seal body is magnetic material;
Describedly before being pressed in the step of silicon chip to be etched, nanometer etching seal also comprises: place magnet below the corrosive liquid container bottoms;
Described nanometer etching seal is pressed in step on silicon chip to be etched, the seal body of magnetic material and magnet produce magneticaction, so that metal catalytic layer and substrate close contact to be etched.
10. method according to claim 8, is characterized in that, the described substrate to be etched of described etching is controlled corrosion depth by controlling etching time to the step of predetermined depth.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310062552.0A CN103145092B (en) | 2013-02-28 | 2013-02-28 | Nanolithographic seal and utilize it to carry out the method for nanolithographic |
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| CN201310062552.0A CN103145092B (en) | 2013-02-28 | 2013-02-28 | Nanolithographic seal and utilize it to carry out the method for nanolithographic |
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| CN103145092A true CN103145092A (en) | 2013-06-12 |
| CN103145092B CN103145092B (en) | 2015-08-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104698744A (en) * | 2015-01-30 | 2015-06-10 | 上海交通大学 | Method for graphical micro-manufacturing of curve surface film by utilizing flexible photolithographic template |
| CN109244002A (en) * | 2018-08-21 | 2019-01-18 | 中国科学院微电子研究所 | Patterning device and its application method |
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| JPH10140399A (en) * | 1996-11-06 | 1998-05-26 | Nikon Corp | Pattern forming method |
| CN1425805A (en) * | 2003-01-17 | 2003-06-25 | 厦门大学 | Process and its device for processing complecated three dimensional structure of metal surface |
| CN1631764A (en) * | 2004-12-28 | 2005-06-29 | 上海纳晶科技有限公司 | Electrochemical deep etching method and apparatus thereof |
| US20070215480A1 (en) * | 2006-03-16 | 2007-09-20 | Fang Nicholas X | Pattern transfer by solid state electrochemical stamping |
| CN101234744A (en) * | 2007-01-30 | 2008-08-06 | 厦门大学 | Method for preparing GaAs micro/nono optical element |
| CN101866842A (en) * | 2010-05-07 | 2010-10-20 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
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2013
- 2013-02-28 CN CN201310062552.0A patent/CN103145092B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10140399A (en) * | 1996-11-06 | 1998-05-26 | Nikon Corp | Pattern forming method |
| CN1425805A (en) * | 2003-01-17 | 2003-06-25 | 厦门大学 | Process and its device for processing complecated three dimensional structure of metal surface |
| CN1631764A (en) * | 2004-12-28 | 2005-06-29 | 上海纳晶科技有限公司 | Electrochemical deep etching method and apparatus thereof |
| US20070215480A1 (en) * | 2006-03-16 | 2007-09-20 | Fang Nicholas X | Pattern transfer by solid state electrochemical stamping |
| CN101234744A (en) * | 2007-01-30 | 2008-08-06 | 厦门大学 | Method for preparing GaAs micro/nono optical element |
| CN101866842A (en) * | 2010-05-07 | 2010-10-20 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104698744A (en) * | 2015-01-30 | 2015-06-10 | 上海交通大学 | Method for graphical micro-manufacturing of curve surface film by utilizing flexible photolithographic template |
| CN109244002A (en) * | 2018-08-21 | 2019-01-18 | 中国科学院微电子研究所 | Patterning device and its application method |
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| CN103145092B (en) | 2015-08-12 |
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