CN103130177A - Suspension structure MEMS device and manufacturing method thereof - Google Patents
Suspension structure MEMS device and manufacturing method thereof Download PDFInfo
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- CN103130177A CN103130177A CN2011103921387A CN201110392138A CN103130177A CN 103130177 A CN103130177 A CN 103130177A CN 2011103921387 A CN2011103921387 A CN 2011103921387A CN 201110392138 A CN201110392138 A CN 201110392138A CN 103130177 A CN103130177 A CN 103130177A
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- 239000000725 suspension Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000004821 distillation Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a sacrificial layer etching method of a suspension structure MEMS device, which comprises the following steps: providing a semiconductor substrate, and forming a sacrificial layer on the semiconductor substrate; forming an isolation groove penetrating through the sacrificial layer and surrounding an area where the suspension structure MEMS device is to be formed; forming a barrier layer to cover the side wall of the isolation groove; the sacrificial layer is removed in the area where the suspended structure MEMS device is to be formed. Correspondingly, the invention also provides the suspension structure MEMS device. The method provided by the invention can effectively inhibit the lateral underetching effect generated when the semiconductor suspension structure is manufactured by using the corrosion method.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of suspension structure MEMS device and manufacture method thereof.
Background technology
Surface sacrifice layer processing (surface micro) technology is one of micro-machined major technique of silicon.Release process is the technique of often using in the MEMS manufacture process.Release process is divided into that wet method discharges and two kinds of dry releases.When the dry release using plasma carried out etching, the surperficial microroughness after etching was large, and etching is incomplete, and residue is arranged.The plasma etching equipment price is expensive, and temperature required higher, the etching selection ratio easily brings damage to device, adopts in addition this kind method that its limitation is arranged, and can't remove the sacrifice layer that is covered by structure.Dry release also comprises hydrogen fluoride gas corrosion and xenon difluoride gas corrosion, and these two kinds of methods the aspect such as compare to corrosion resistance, security, the corrosion selection of equipment and have relatively high expectations.Therefore dry release has the limitation of its application.
Because the gap of the frame for movement layer of silicon chip surface deposit and substrate is very little, if adopt wet etching to remove the method for sacrifice layer, in the dry run after structure discharges, suspension structure easily sticks on substrate.The most serious is in dry run, and the surface tension that the liquid bridge between unsettled film and substrate produces pulls structure sheaf to substrate, if the elastic-restoring force of unsettled film is not enough to overcome this pulling force at this moment, and structure sheaf meeting and substrate contact, and adhere to substrate.Obviously, if the area of suspension structure is larger, adhesion phenomenon more easily occurs.Fig. 1 is the microphoto of the device after existing wet method method for releasing etching, as can see from Figure 1 around the et ch profiles vestige of device obviously greater than device itself, make device be easy to the phenomenon that sticks together.
Therefore, need a kind of technology effectively to be controlled in corrosion process, the suspension structure area that causes because of the undercutting of sacrifice layer side direction increases, and effectively reduces the possibility that device sticks together, and then improves device reliability and performance.
Summary of the invention
The invention provides a kind of suspension structure MEMS device and manufacture method thereof, be used for being suppressed at when making the semiconductive suspension structure, produce the side direction undercutting in corrosion process.
The invention provides a kind of sacrifice layer lithographic method of suspension structure MEMS device, it is characterized in that, comprise the following steps:
A) provide Semiconductor substrate 100, form sacrifice layer 200 on described Semiconductor substrate 100;
B) form the isolation channel that penetrates described sacrifice layer, around the zone that will form suspension structure MEMS device;
C) form the sidewall that barrier layer 400 covers isolation channel;
D) remove sacrifice layer in the zone to form suspension structure MEMS device.
According to another aspect of the present invention, also provide a kind of suspension structure MEMS device, comprise the isolation channel around described suspension structure, have barrier layer 400 on wherein said ditch non-intercommunicating cells lateral wall.
Method provided by the invention is passed through in advance at the peripheral isolation channel that forms of the suspension structure of device, and the growth barrier layer effectively avoids carrying out in subsequent process steps the side direction underetch in the sacrifice layer wet etching course, and then guarantees device reliability and performance.
Description of drawings
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is in prior art, and device is carried out microphoto after wet method discharges;
Fig. 2 is the schematic flow sheet according to a kind of specific embodiment of the preparation method of a kind of suspension structure MEMS device provided by the invention;
Fig. 3 to Figure 12 be when making suspension structure MEMS device according to a specific embodiment of the present invention according to the method shown in Fig. 2 device at the sectional structure schematic diagram of each fabrication stage;
Figure 13 is the schematic top plan view according to device shown in Figure 12, and wherein Figure 12 is along the sectional structure schematic diagram along the line of AA ' in Figure 13;
Figure 14 is for carrying out microphoto after wet method discharges according to method provided by the invention to device.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
The specific embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting of specific examples are described.Certainly, they are only example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between the various embodiment that discuss of institute and/or setting.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skills can recognize the property of can be applicable to of other technique and/or the use of other materials.In addition, First Characteristic described below Second Characteristic it " on " structure can comprise that the first and second Characteristics creations are the direct embodiment of contact, also can comprise the embodiment of other Characteristics creation between the first and second features, such the first and second features may not be direct contacts.Should be noted that illustrated parts are not necessarily drawn in proportion in the accompanying drawings.The present invention has omitted description to known assemblies and treatment technology and technique to avoid unnecessarily limiting the present invention.
Please refer to Fig. 2, Fig. 2 is that the method comprises according to the flow chart of a specific embodiment of the sacrifice layer lithographic method of a kind of suspension structure MEMS device of the present invention:
Step S101 provides Semiconductor substrate 100, forms sacrifice layer 200 on described Semiconductor substrate 100;
Step S102 forms the isolation channel that penetrates described sacrifice layer, around the zone that will form suspension structure MEMS device;
Step S103 forms the sidewall that barrier layer 400 covers isolation channel;
Step S104, removal will form the sacrifice layer in the zone of suspension structure MEMS device.
Below in conjunction with Fig. 3 to Figure 12, step S101 is described to step S104, Fig. 3 to Figure 12 makes the sectional structure schematic diagram of this each fabrication stage of semiconductor structure in the semiconductor structure process according to the method shown in Fig. 2 according to a specific embodiment of the present invention.Need to prove, the accompanying drawing of each embodiment of the present invention is only for the purpose of illustrating, therefore is not necessarily to scale.
With reference to figure 3, execution in step S101 provides substrate 100, and forms sacrifice layer 200 on described substrate 100.Substrate 100 can comprise silicon substrate (for example silicon wafer).Designing requirement known according to prior art (for example P type substrate or N-type substrate), substrate 100 can comprise various doping configurations.In other embodiment, substrate 100 can also comprise other basic semiconductor, for example germanium.Perhaps, substrate 100 can comprise compound semiconductor, for example carborundum, GaAs, indium arsenide or indium phosphide.Typically, substrate 100 can have but be not limited to the approximately thickness of hundreds of micron, usually can be in the thickness range of 400 μ m～800 μ m, for example: 400 μ m, 500 μ m or 800 μ m.
Optionally, form the first mask layer 300 on sacrifice layer 200, the material of described the first mask layer 300 can be photoresist, organic polymer, silica, silicon nitride, Pyrex, boron-phosphorosilicate glass and combination thereof.When described the first mask layer 300 is photoresist, can be formed on by the method for spin coating, glue spraying on described sacrifice layer 200, and carry out composition by exposure and development.When described the first mask layer 300 is organic polymer, can be formed on by the method for spin coating, distillation on described sacrifice layer 200; And when described the first mask layer 300 is silica, silicon nitride, Pyrex, boron-phosphorosilicate glass, can be formed on described sacrifice layer 200 by suitable methods such as chemical vapor deposition, sputters.Then, then deposit photoresist as mask, carry out composition by dry etching or wet etching after exposure and development, as shown in Figure 4.Preferably, selecting thickness is that the BP218 photoresist of 6000nm～7000nm is as the first mask layer 300.By the first mask layer 300 is carried out composition, obtain around the isolation channel figure in the zone that will form suspension structure MEMS device.The width of isolation channel is 80 μ m～120 μ m, for example 80 μ m, 100 μ m or 120 μ m.
Under the sheltering of the first mask layer 300, execution in step S102 forms the isolation channel that penetrates described sacrifice layer, around the zone that will form suspension structure MEMS device.Lithographic method such as plasma etching (Plasma Etching), ion beam etching (IBE), ise (SE) or reactive ion beam etching (RIBE) (RIBE) etc.(RIE) has higher etch rate due to reactive ion etching, and good directionality arranged and select ratio, can etching fine pattern, the therefore preferred method that adopts reactive ion etching.Etching depth is 1.2 μ m～1.5 μ m.Because the thickness of sacrifice layer 200 is 1.1 μ m～1.2 μ m, so etching operation can etch away part substrate 100, namely crosses and carves, as shown in Figure 5.Preferably, under the water-cooled condition, adopt CHF
3Gas carries out dry etching, and flow is 30ml～50ml/min, for example: 30ml/min, 40ml/min or 50ml/min.Can adopt ashing to add cleaning after dry etching and remove the first mask layer 300.Fig. 6 is the profile after removal the first mask layer 300.
Carry out described step S103, form the sidewall that barrier layer 400 covers isolation channel.As shown in Figure 7, described silicon nitride material also can be formed at sidewall and the bottom of the isolation channel that forms in step S102.Because silicon nitride material has good stability, corrosion resistance is high, can effectively prevent follow-up when sacrifice layer 200 is carried out wet etching, the side direction undercutting of etchant solution.The thickness on barrier layer 400 is 1.2 μ m～1.5 μ m.
Optionally, form the second mask layer 500 on barrier layer 400, the material of described the second mask layer 500 can be photoresist, organic polymer, silica, silicon nitride, Pyrex, boron-phosphorosilicate glass and combination thereof.When described the second mask layer 500 is photoresist, can be formed on by the method for spin coating, glue spraying on described barrier layer 400, and carry out composition by exposure and development.When described the second mask layer 500 is organic polymer, can be formed on by the method for spin coating, distillation on described barrier layer 400; And when described the second mask layer 500 is silica, silicon nitride, Pyrex, boron-phosphorosilicate glass, can be formed on described barrier layer 400 by suitable methods such as chemical vapor deposition, sputters, then, deposit again photoresist as mask, undertaken graphically by dry etching or wet etching after exposure and development, as shown in Figure 8.Preferably, adopting thickness is that the S9912 photoresist of 1000nm～1500nm is as the second mask layer 500.
According to the composition of the second mask layer 500, adopt electron beam evaporation and ultrasonic lift-off technology to form top electrode 600 on barrier layer 400.Described top electrode 600 is comprised of crome metal and gold, and wherein the thickness of chromium is 10～20nm, and the thickness of gold is 100～200nm.Fig. 9 is the profile after forming top electrode 600 and removing the second mask layer 500.
Optionally, further form the 3rd mask layer 700 that covers whole device, and carry out graphically, to form the corrosion opening shape, as shown in figure 10.The material of described the 3rd mask layer 700 is similar with the second mask layer 500 to the first mask layer 300, can with reference to the appropriate section of this specification, not repeat them here.Preferably, adopting thickness is that the S9920 photoresist of 2000nm～2500nm is as the 3rd mask layer 700.
Under the sheltering of the 3rd mask layer 700 and top electrode 600, dry etching is carried out on barrier layer 400, such as: plasma etching (Plasma Etching), ion beam etching (IBE), ise (SE) or reactive ion beam etching (RIBE) (RIBE) etc.Preferably, adopt the method for reactive ion etching.The barrier layer is saturating 400 quarters, and remove the 3rd mask layer 700, as shown in figure 11.
At last, execution in step S104, removal will form the sacrifice layer 200 in the zone of suspension structure MEMS device, forms suspension structure, with reference to Figure 12 and Figure 13.Usually can adopt hydrofluoric acid solution erosion removal sacrifice layer 200.As can see from Figure 12, the silicon nitride material that is formed at ditch non-intercommunicating cells lateral wall and bottom has effectively suppressed the side direction undercutting of corrosive agent, and the semiconductor structure that obtains is complete, the border is clearly demarcated.
Adopt method of the present invention, can effectively suppress the side direction underetch.Figure 14 is and adopts method of the present invention to carry out microphoto after wet method discharges to device, because isolation channel obtains through dry etching, sidewall and bottom are rough, so the metal that plates in isolation channel just can not show yellow, and be shown as black on photo.Compared to Figure 1, can obviously find out, after adopting the present invention, the side direction underetch is suppressed fully, and is clear around the erosion profile vestige of device, and conforms to the size of device own, is not easy the phenomenon that sticks together.
Although describe in detail about example embodiment and advantage thereof, be to be understood that and carry out various variations, substitutions and modifications to these embodiment in the situation that do not break away from the protection domain that spirit of the present invention and claims limit.For other examples, when those of ordinary skill in the art should easily understand within keeping protection domain of the present invention, the order of processing step can change.
In addition, range of application of the present invention is not limited to technique, mechanism, manufacturing, material composition, means, method and the step of the specific embodiment of describing in specification.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique, mechanism, manufacturing, material composition, means, method or the step that have existed or be about to later on develop at present, wherein they carry out identical function or the identical result of acquisition cardinal principle of corresponding embodiment cardinal principle of describing with the present invention, can use them according to the present invention.Therefore, claims of the present invention are intended to these technique, mechanism, manufacturing, material composition, means, method or step are included in its protection domain.
Claims (14)
1. the preparation method of a suspension structure MEMS device comprises:
A) provide Semiconductor substrate (100), at the upper sacrifice layer (200) that forms of described Semiconductor substrate (100);
B) form the isolation channel that penetrates described sacrifice layer, around the zone that will form suspension structure MEMS device;
C) form the sidewall that barrier layer (400) covers isolation channel;
D) remove sacrifice layer (200) in the zone to form suspension structure MEMS device.
2. according to claim 1 method, wherein said barrier layer (400) are silicon nitride.
3. according to claim 1 method, wherein the width of isolation channel is 80 μ m～120 μ m.
4. according to claim 1 method, wherein said barrier layer (400) cover sidewall and the bottom of isolation channel, and cover the sacrifice layer (200) in the zone that will form suspension structure MEMS device.
5. according to claim 4 method, wherein steps d) be included in the upper opening that forms in barrier layer (400) of sacrifice layer (200) that covering will form the zone of suspension structure MEMS device, and remove described sacrifice layer by described opening.
6. according to claim 1 method, the thickness of wherein said barrier layer (400) is 1.2 μ m～1.5 μ m.
7. method according to claim 1, wherein said sacrifice layer (200) is silica, removes described sacrifice layer and comprises with hydrofluoric acid and remove described sacrifice layer (200).
8. method according to claim 1, is characterized in that, the described isolation channel degree of depth is 1.2 μ m～1.5 μ m.
9. according to claim 1～8 described methods of any one, is characterized in that, the thickness of described sacrifice layer (200) is 1.1 μ m～1.2 μ m.
10. a suspension structure MEMS device, comprise the isolation channel around described suspension structure, has barrier layer (400) on wherein said ditch non-intercommunicating cells lateral wall.
11. device according to claim 10, wherein said barrier layer (400) are silicon nitride.
12. device according to claim 10, wherein the width of isolation channel is 80 μ m～120 μ m.
13. device according to claim 10, wherein said barrier layer (400) consist of the part of described suspension structure.
14. device according to claim 10, the wherein said isolation channel degree of depth are 1.2 μ m～1.5 μ m.
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| CN2011103921387A CN103130177A (en) | 2011-11-30 | 2011-11-30 | Suspension structure MEMS device and manufacturing method thereof |
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| CN2011103921387A CN103130177A (en) | 2011-11-30 | 2011-11-30 | Suspension structure MEMS device and manufacturing method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362083B1 (en) * | 1998-11-27 | 2002-03-26 | Robert Bosch Gmbhl | Method for fabricating locally reinforced metallic microfeature |
| CN1699939A (en) * | 2005-06-15 | 2005-11-23 | 中国科学院上海微系统与信息技术研究所 | Room temperature Fabry-Perot infrared detector array and fabrication method thereof |
| US20070202628A1 (en) * | 2006-02-24 | 2007-08-30 | Atmel Germany Gmbh | Manufacturing process for integrated piezo elements |
| JP2009214241A (en) * | 2008-03-11 | 2009-09-24 | Nippon Telegr & Teleph Corp <Ntt> | Microstructure body and its manufacturing method |
-
2011
- 2011-11-30 CN CN2011103921387A patent/CN103130177A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362083B1 (en) * | 1998-11-27 | 2002-03-26 | Robert Bosch Gmbhl | Method for fabricating locally reinforced metallic microfeature |
| CN1699939A (en) * | 2005-06-15 | 2005-11-23 | 中国科学院上海微系统与信息技术研究所 | Room temperature Fabry-Perot infrared detector array and fabrication method thereof |
| US20070202628A1 (en) * | 2006-02-24 | 2007-08-30 | Atmel Germany Gmbh | Manufacturing process for integrated piezo elements |
| JP2009214241A (en) * | 2008-03-11 | 2009-09-24 | Nippon Telegr & Teleph Corp <Ntt> | Microstructure body and its manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 欧毅等: "MEMS器件的腐蚀与释放", 《半导体学报》, vol. 27, 31 December 2006 (2006-12-31), pages 347 - 350 * |
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Application publication date: 20130605 |