CN103123428B - Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof - Google Patents
Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof Download PDFInfo
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- CN103123428B CN103123428B CN201110369741.3A CN201110369741A CN103123428B CN 103123428 B CN103123428 B CN 103123428B CN 201110369741 A CN201110369741 A CN 201110369741A CN 103123428 B CN103123428 B CN 103123428B
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Abstract
The invention provides a thin film transistor (TFT)-liquid crystal display (LCD) array substrate and a production method of the TFT-LCD array substrate. Comb teeth of a comb-shaped repairing wire and comb teeth of a comb-shaped common electrode wire are arranged in an opposite mode, tail ends of the comb teeth of the comb-shaped repairing wire and the comb teeth of the comb-shaped common electrode wire are in a sharp shape, electrostatic charge on the repairing wire is removed by utilizing of a point discharge effect, the problem that a grid insulation layer separated by a data line is punctured to cause short circuits of the data line and the repairing wire due to the fact that too much electrostatic charge is gathered on the repairing wire is solved, and reliability and yield of a thin film transistor liquid crystal display are improved. Especially, the electrostatic charge gathered on the repairing wire is guided into the common electrode wire and is effectively removed by utilizing connection of the common electrode wire and a fixed potential.
Description
Technical field
The present invention relates to LCD Technology field, more particularly to a kind of TFT-LCD array substrate and its manufacture method.
Background technology
Thin Film Transistor-LCD (TFT-LCD) is with low-voltage, Micro Energy Lose, display information amount is big, it is colored to be easy to
The advantages of change, leading position is occupied in current monitor market.It has been widely used in electronic computer, electronic recording
In the electronic equipments such as sheet, mobile phone, video camera, HDTV.
Thin Film Transistor-LCD includes the array base palte and color membrane substrates to box, and is filled in array base
The liquid crystal layer in gap between plate and color membrane substrates.The general principle of the Thin Film Transistor-LCD display image
It is：The electric field on liquid crystal layer is acted on by the applying on the array base palte and color membrane substrates, the liquid crystal layer molecule is controlled
Orientation so that control to be perforated through the irradiation light of liquid crystal layer molecule number, that is, reach the light intensity that modulation passes through liquid crystal layer
Purpose.
In the semiconductor device, static discharge (Electro Static Discharge, ESD) is a kind of common showing
As static discharge can cause puncturing for dielectric, so as to cause various damages.And Thin Film Transistor-LCD is due to it
Array base palte and color membrane substrates are the glass of insulation, so that the electrostatic charge for producing in the fabrication process is easily gathered in glass
Array base palte and color membrane substrates on, also, electrostatic charge can be applied in each film layer, so as to produce serious static discharge
Infringement, causes the failure of thin film transistor (TFT)；Transmission line it is short-circuit, breaking the problems such as, influence product production yield.
Intersect on the array base palte of existing Thin Film Transistor-LCD and be provided with data wire and repair line, wherein institute
State data wire and provide default voltage data to thin film transistor (TFT), be used to control the liquid of each pixel of Thin Film Transistor-LCD
Brilliant degree of deflection etc.；And the repair line is used to repair broken string when broken string occurs in array base palte, array base palte is improved
The yield of product.The repair line is formed with the gate line same layer on array base palte, and it passes through gate insulation between data wire
Layer isolation.It is easy to assemble a large amount of electrostatic charges in repair line, due to the presence of static discharge phenomenon, the data wire and repair line
Crossover location easily puncture, so as to cause data wire and repair line short circuit, reduce Thin Film Transistor-LCD
Reliability and yield.
The content of the invention
It is an object of the invention to provide a kind of TFT-LCD array substrate and its manufacture method, to solve existing TFT-
It is easy to assemble a large amount of electrostatic charges in LCD array substrate in repair line, the crossover location of data wire and repair line is easily due to quiet
Discharge of electricity phenomenon and puncture, cause data wire and repair line short circuit, reduce the reliability of Thin Film Transistor-LCD
The problem of property and yield.
In order to solve the above technical problems, the present invention provides a kind of TFT-LCD array substrate, including：Comb shape repair line and comb
Shape public electrode wire；The comb of the comb shape repair line is oppositely arranged with the comb of the comb shape public electrode wire, and end is equal
Into tip shape；Wherein, the comb shape repair line is located at the first metal layer with the comb shape public electrode wire.
Optionally, in described TFT-LCD array substrate, also include：Amorphous silicon chip, the amorphous silicon chip respectively with institute
The comb part of the comb and the comb shape public electrode wire of stating comb shape repair line is overlapped.
Optionally, in described TFT-LCD array substrate, the amorphous silicon chip is located on the first metal layer
Amorphous silicon layer.
Optionally, in described TFT-LCD array substrate, formed between the first metal layer and the amorphous silicon layer
There is gate insulation layer, opening is provided with the gate insulation layer, described opening exposes the comb and the comb of the comb shape repair line
The comb of shape public electrode wire, by the opening, the amorphous silicon chip respectively with the comb of the comb shape repair line and described
The comb part of comb shape public electrode wire is overlapped.
Optionally, in described TFT-LCD array substrate, the comb of the comb shape repair line and the comb shape common electrical
Distance between the comb end of polar curve is 3 microns~5 microns.
Optionally, in described TFT-LCD array substrate, the comb of the comb shape repair line and the comb shape common electrical
The quantity of the comb of polar curve is multiple.
Optionally, in described TFT-LCD array substrate, also include：Gate line, the gate line is repaiied with the comb shape
Multiple line and comb shape public electrode wire be arranged in parallel, and the gate line is located at the first metal layer；Data wire, the data wire and institute
State comb shape repair line and comb shape public electrode wire is arranged in a crossed manner, and the data line bit is in second metal layer.
Optionally, in described TFT-LCD array substrate, the comb of the comb shape repair line and the comb shape common electrical
The comb of polar curve is just to the data wire.
The present invention also provides a kind of manufacture method of TFT-LCD array substrate, including：One glass substrate is provided；Described
The first metal layer is formed on glass substrate, comb shape repair line and comb shape public electrode wire, institute are formed by the first metal layer
The comb and the comb of the comb shape public electrode wire for stating comb shape repair line are oppositely arranged, and end is into tip shape.
Optionally, in the manufacture method of described TFT-LCD array substrate, also include：The first metal layer it
Upper formation amorphous silicon layer, amorphous silicon chip, the comb of the amorphous silicon chip and the comb shape repair line are formed by the amorphous silicon layer
The comb connection of tooth and the comb shape public electrode wire.
Optionally, in the manufacture method of described TFT-LCD array substrate, form non-on the first metal layer
Before crystal silicon layer, also include：Gate insulation layer is formed on the first metal layer, opening is formed on the gate insulation layer, it is described
Expose the comb of the comb shape repair line and the comb of the comb shape public electrode wire in opening.
Optionally, in the manufacture method of described TFT-LCD array substrate, also include：The shape on the amorphous silicon layer
Into second metal layer, data wire is formed by the second metal layer, the data wire is public with the comb shape repair line and comb shape
Common-battery polar curve is arranged in a crossed manner.
In a kind of TFT-LCD array substrate and its manufacture method that the present invention is provided, by the comb of comb shape repair line
Comb with comb shape public electrode wire is oppositely arranged, and end, using point discharge effect, is eliminated in repair line into tip shape
Electrostatic charge, that is, avoid in repair line because electrostatic charge aggregation is excessive, puncture the gate insulation layer isolated with data wire, lead
The problem of data wire and repair line short circuit is caused, the reliability and yield of Thin Film Transistor-LCD is improve.Particularly, will
The electrostatic charge being gathered in repair line is imported on public electrode wire, is connected with fixed potential using public electrode wire, effectively
Eliminate the electrostatic charge of aggregation.
Further, also include：Amorphous silicon chip, the comb and the comb shape of the amorphous silicon chip and the comb shape repair line
The comb connection of public electrode wire.By the avalanche and discharge effect of the amorphous silicon chip, the electrostatic charge improved in repair line is released
The quantity and speed put.Further improve the reliability and yield of Thin Film Transistor-LCD.
Brief description of the drawings
Fig. 1 is the TFT-LCD array substrate partial structural diagram of the embodiment of the present invention one；
Fig. 2 is generalized section of the TFT-LCD array substrate shown in Fig. 1 along AA '；
Fig. 3 is the TFT-LCD array substrate partial structural diagram of the embodiment of the present invention two；
Fig. 4 is generalized section of the TFT-LCD array substrate described in Fig. 3 along BB '.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to the present invention provide TFT-LCD array substrate and its manufacture method make into
One step is described in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that,
Accompanying drawing is only used to conveniently, lucidly aid in illustrating the purpose of the embodiment of the present invention in the form of simplifying very much.
Core concept of the invention is, there is provided a kind of TFT-LCD array substrate and its manufacture method, by comb shape reparation
The comb of line is oppositely arranged with the comb of comb shape public electrode wire, and end, using point discharge effect, eliminates into tip shape
Electrostatic charge in repair line, that is, avoid in repair line because electrostatic charge aggregation is excessive, punctures the grid isolated with data wire
Insulating barrier, causes the problem of data wire and repair line short circuit, improves the reliability and yield of Thin Film Transistor-LCD.
Particularly, the electrostatic charge that will accumulate in repair line is imported on public electrode wire, using public electrode wire and fixed potential
Connection, effectively eliminates the electrostatic charge of aggregation.
Implement profit one
Fig. 1 and Fig. 2 is refer to, wherein, Fig. 1 illustrates for the TFT-LCD array substrate partial structurtes of the embodiment of the present invention one
Figure；Fig. 2 is generalized section of the TFT-LCD array substrate shown in Fig. 1 along AA '.As shown in figure 1, TFT-LCD array substrate 1
Including：
Comb shape repair line 11 and comb shape public electrode wire 12；
The comb 112 of the comb shape repair line 11 is oppositely arranged with the comb 122 of the comb shape public electrode wire 12, and end
End is into tip shape；
Wherein, the comb shape repair line 11 is located at the first metal layer with the comb shape public electrode wire 12.
Specifically, the comb shape repair line 11 includes comb body 111 and comb 112, the comb body 111 and the one of comb 112
Connection；The comb shape public electrode wire 12 includes comb body 121 and comb 122, the comb body 121 and the integrally connected of comb 122.For
The convenience of description and cause that the comb body of comb shape repair line, the comb body of comb and comb shape public electrode wire, comb are distinguished, under
In the description of text, the comb body 111 and comb 112 of comb shape repair line 11 are referred to as repair line comb body 111 and repair line comb 112；
The comb body 121 and comb 122 of comb shape public electrode wire 12 are referred to as common wire comb body 121 and common wire comb 122.
It is oppositely arranged with common wire comb 122 by repair line comb 112, and the end 112a of repair line comb 112 and public affairs
The conllinear end 122a of comb 122 into tip shape, using point discharge effect, eliminates the electrostatic charge in repair line, that is, avoid
Because electrostatic charge aggregation is excessive in repair line, puncture the gate insulation layer isolated with data wire, cause data wire and repair line
The problem of short circuit, improves the reliability and yield of Thin Film Transistor-LCD.Particularly, will accumulate in repair line
Electrostatic charge is imported on public electrode wire, is connected with fixed potential using public electrode wire, effectively eliminates the electrostatic electricity of aggregation
Lotus.
In the present embodiment, the TFT-LCD array substrate 1 also includes：Data wire 13, the data wire 13 and the comb
Shape repair line 11 and comb shape public electrode wire 12 are arranged in a crossed manner, and the data wire 13 is located at second metal layer；Gate line (Fig. 1
Not shown in), the gate line be arranged in parallel with the comb shape repair line 11 and comb shape public electrode wire 12, and the gate line
Positioned at the first metal layer.Additionally, in the gate line, comb shape repair line 11, comb shape public electrode wire 12 and the data wire 13
Between be additionally provided with gate insulation layer, be used to the gate line, comb shape repair line 11, comb shape public electrode wire 12 and the data
Line 13 is isolated.
Preferably, the distance between the end 112a of the repair line comb 112 and the end 122a of common wire comb 122 is 3 micro-
Rice~5 microns, so as to effectively utilize point discharge effect, improves the quantity and speed of the electrostatic charge release in repair line.Enter
One step improves the reliability and yield of Thin Film Transistor-LCD.
In the present embodiment, the quantity of the repair line comb 112 and common wire comb 122 is multiple.Further, institute
Repair line comb 112 and common wire comb 122 are stated just to the data wire 13, the repair line comb 112 and public is herein means
Projection of the projection on the glass substrate of line comb 122 with the data wire 13 on the glass substrate is Chong Die or partly overlaps.It is logical
The discharge effect between multiple repair line comb 112 and common wire comb 122 is crossed, can improve what the electrostatic charge in repair line discharged
Quantity and speed.Meanwhile, the repair line comb 112 and common wire comb 122 are arranged at the position just to the data wire 13
Put, can further improve the burst size and speed of the electrostatic charge in the repair line of comb shape repair line 11 and the infall of data wire 13
Degree, so as to further improve the reliability and yield of Thin Film Transistor-LCD.
Accordingly, the present invention a kind of manufacture method of above-mentioned TFT-LCD array substrate is also provided, here, refer to Fig. 1 and
Fig. 2.The manufacture method of the TFT-LCD array substrate includes：
One glass substrate 10 is provided；
The first metal layer (not shown) is formed on the glass substrate 10, is formed by the first metal layer and combed
Shape repair line 11 and comb shape public electrode wire 12, the comb 112 of the comb shape repair line 11 and the comb shape public electrode wire 12
Comb 122 be oppositely arranged, and end 112a, 122a are into tip shape.
Here, form comb shape repair line 11 and comb shape public electrode wire 12 by the first metal layer including：Described
Photoresist layer is formed on the first metal layer；The photoresist layer is exposed and developing process, forms patterning photoresist layer；Etching the
One metal level, the removal patterning unsheltered part the first metal layer of photoresist layer, forms comb shape repair line 11 and comb shape common electrical
Polar curve 12.
Certainly, gate line and the grid being connected with the gate line can be also simultaneously formed using the first metal layer, it is described
Gate line be arranged in parallel with the comb shape repair line 11 and comb shape public electrode wire 12.I.e. described comb shape repair line 11 and comb shape are public
The formation of common-battery polar curve 12, make use of the processing procedure of existing TFT-LCD array substrate, so as to realize eliminating quiet in repair line
While electric charge, can also simplify manufacturing process, reduce manufacturing cost.
Then, gate insulation layer can be formed on the first metal layer, is used to gate line, comb shape repair line, comb shape is public
Common-battery polar curve is isolated with the data wire being subsequently formed；Amorphous silicon layer is formed on the gate insulation layer, is used to form film crystal
The functional structure PN junction of pipe；Form second metal layer on the gate insulation layer, be used to be formed data wire and with the data wire
The source electrode of connection, drain electrode.
Embodiment two
Fig. 3 and Fig. 4 is refer to, wherein, Fig. 3 illustrates for the TFT-LCD array substrate partial structurtes of the embodiment of the present invention two
Figure；Fig. 4 is generalized section of the TFT-LCD array substrate shown in Fig. 3 along BB '.As shown in figure 3, TFT-LCD array substrate 2
Including：
Comb shape repair line 21 and comb shape public electrode wire 22；
The comb 212 of the comb shape repair line 21 is oppositely arranged with the comb 222 of the comb shape public electrode wire 22, and end
End is into tip shape；
Wherein, the comb shape repair line 21 is located at the first metal layer with the comb shape public electrode wire 22；
Amorphous silicon chip 24, the comb 212 and the comb shape common electrical of the amorphous silicon chip 24 and the comb shape repair line 21
The comb 222 of polar curve 22 partly overlaps.
The present embodiment is also to include with the difference of embodiment one：Amorphous silicon chip 24, the amorphous silicon chip 24 and the comb
The comb 222 of the comb 212 of shape repair line 21 and the comb shape public electrode wire 22 partly overlaps.By the amorphous silicon chip 24
Avalanche and discharge effect, improve repair line on electrostatic charge release quantity and speed.Further improve thin film transistor (TFT) liquid
The reliability and yield of crystal display.
In the present embodiment, the amorphous silicon chip 24 is located at the amorphous silicon layer on the first metal layer.Herein, term
" on " refer to, adjacent upper strata or non-adjacent upper strata.
Accordingly, the present invention a kind of manufacture method of above-mentioned TFT-LCD array substrate is also provided, here, refer to Fig. 3 and
Fig. 4.The manufacture method of the TFT-LCD array substrate includes：
One glass substrate 20 is provided；
The first metal layer (not shown) is formed on the glass substrate 20, is formed by the first metal layer and combed
Shape repair line 21 and comb shape public electrode wire 22, the comb 212 of the comb shape repair line 21 and the comb shape public electrode wire 22
Comb 222 be oppositely arranged, and end 212a, 222a are into tip shape；
Amorphous silicon layer (not shown) is formed on the first metal layer, amorphous is formed by the amorphous silicon layer
Silicon chip 24, the amorphous silicon chip 24 and the comb 212 of the comb shape repair line 21 and the comb of the comb shape public electrode wire 22
222 connections.
In the present embodiment, the processing procedure of the amorphous silicon chip 24 utilizes the processing procedure of existing TFT-LCD array substrate.Especially
, using amorphous silicon layer is formed on gate insulation layer, being used to be formed the functional structure PN junction of thin film transistor (TFT), this is existing
TFT-LCD array substrate processing procedure, photoetching and etches the amorphous silicon layer and forms amorphous silicon chip 24, so as to manufacturing process can be simplified, drops
Low manufacturing cost.Fig. 4 is refer to, wherein, in order that obtaining the amorphous silicon chip 24 and repair line comb 212 and common wire comb
222 connections, need to form gate insulation layer opening 25a on gate insulation layer 25, the opening 25a exposed portion or whole it is described
Repair line comb 212 and common wire comb 222, by gate insulation layer opening 25a, the amorphous silicon chip 24 just can be with repair line
Comb 212 and common wire comb 222 are connected.
In other embodiments of the invention, the amorphous in existing TFT-LCD array substrate processing procedure can not also be utilized
Silicon layer, for example, an amorphous silicon layer is independently formed in the last layer close to the first metal layer or next layer, to form amorphous
Silicon chip 24.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (6)
1. a kind of TFT-LCD array substrate, it is characterised in that including：
Comb shape repair line and comb shape public electrode wire, the comb of the comb of the comb shape repair line and the comb shape public electrode wire
Quantity be multiple；
The comb of the comb shape repair line is oppositely arranged with the comb of the comb shape public electrode wire, and end is into tip shape；
Wherein, the comb shape repair line is located at the first metal layer with the comb shape public electrode wire；
Also include：Amorphous silicon chip, the amorphous silicon chip respectively with the comb and the comb shape public electrode of the comb shape repair line
The comb part of line is overlapped；The amorphous silicon chip is located at the amorphous silicon layer on the first metal layer；The first metal layer
And gate insulation layer is formed between the amorphous silicon layer, and opening is provided with the gate insulation layer, the comb is exposed in the opening
The comb of the comb of shape repair line and the comb shape public electrode wire, by the opening, the amorphous silicon chip respectively with it is described
The comb part of the comb of comb shape repair line and the comb shape public electrode wire is overlapped.
2. TFT-LCD array substrate as claimed in claim 1, it is characterised in that the comb of the comb shape repair line with it is described
Distance between the comb end of comb shape public electrode wire is 3 microns~5 microns.
3. TFT-LCD array substrate as claimed in claim 1, it is characterised in that also include：
Gate line, the gate line be arranged in parallel with the comb shape repair line and comb shape public electrode wire, and gate line position
In the first metal layer；
Data wire, the data wire is arranged in a crossed manner with the comb shape repair line and comb shape public electrode wire, and the data line bit
In second metal layer.
4. TFT-LCD array substrate as claimed in claim 3, it is characterised in that the comb of the comb shape repair line with it is described
The comb of comb shape public electrode wire is just to the data wire.
5. a kind of manufacture method of TFT-LCD array substrate as claimed in claim 1, it is characterised in that including：
One glass substrate is provided；
The first metal layer is formed on the glass substrate, comb shape repair line is formed by the first metal layer and comb shape is public
Electrode wires, the comb of the comb shape repair line is multiple, the comb shape with the quantity of the comb of the comb shape public electrode wire
The comb of repair line is oppositely arranged with the comb of the comb shape public electrode wire, and end is into tip shape；
Amorphous silicon layer is formed on the first metal layer, amorphous silicon chip, the non-crystalline silicon are formed by the amorphous silicon layer
Piece is connected with the comb of the comb shape repair line and the comb of the comb shape public electrode wire；
Wherein, before forming amorphous silicon layer on the first metal layer, also include：
Gate insulation layer is formed on the first metal layer, opening is formed on the gate insulation layer, the comb is exposed in the opening
The comb of the comb of shape repair line and the comb shape public electrode wire.
6. the manufacture method of TFT-LCD array substrate as claimed in claim 5, it is characterised in that also include：In the amorphous
Second metal layer is formed on silicon layer, data wire, the data wire and the comb shape repair line are formed by the second metal layer
And comb shape public electrode wire is arranged in a crossed manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110369741.3A CN103123428B (en) | 2011-11-18 | 2011-11-18 | Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110369741.3A CN103123428B (en) | 2011-11-18 | 2011-11-18 | Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof |
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| CN103123428A CN103123428A (en) | 2013-05-29 |
| CN103123428B true CN103123428B (en) | 2017-05-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103441130B (en) * | 2013-08-29 | 2015-08-12 | 京东方科技集团股份有限公司 | There is substrate and the manufacture method thereof of static electricity self-protection capability |
| CN103676378A (en) * | 2013-12-16 | 2014-03-26 | 深圳市华星光电技术有限公司 | Array substrate, liquid crystal display panel and manufacturing method of array substrate |
| CN104492656B (en) * | 2015-01-16 | 2016-10-05 | 合肥京东方光电科技有限公司 | A kind of Thinfilm pattern prosthetic device and restorative procedure, cleaning method |
| CN105892184A (en) * | 2016-06-12 | 2016-08-24 | 京东方科技集团股份有限公司 | Repair method and system for short-circuit defect in display panel |
| CN111352281A (en) * | 2020-04-07 | 2020-06-30 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
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| US5798534A (en) * | 1994-08-20 | 1998-08-25 | U.S. Philips Corporation | Manufacture of electronic devices comprising thin-film circuitry |
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Effective date of registration: 20201207 Address after: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Haiyun Communication Co.,Ltd. Address before: 201108 Shanghai city Minhang District Huaning Road No. 3388 Patentee before: Shanghai AVIC Optoelectronics Co.,Ltd. |