CN103123428A - Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof - Google Patents
Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof Download PDFInfo
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- CN103123428A CN103123428A CN2011103697413A CN201110369741A CN103123428A CN 103123428 A CN103123428 A CN 103123428A CN 2011103697413 A CN2011103697413 A CN 2011103697413A CN 201110369741 A CN201110369741 A CN 201110369741A CN 103123428 A CN103123428 A CN 103123428A
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Abstract
The invention provides a thin film transistor (TFT)-liquid crystal display (LCD) array substrate and a production method of the TFT-LCD array substrate. Comb teeth of a comb-shaped repairing wire and comb teeth of a comb-shaped common electrode wire are arranged in an opposite mode, tail ends of the comb teeth of the comb-shaped repairing wire and the comb teeth of the comb-shaped common electrode wire are in a sharp shape, electrostatic charge on the repairing wire is removed by utilizing of a point discharge effect, the problem that a grid insulation layer separated by a data line is punctured to cause short circuits of the data line and the repairing wire due to the fact that too much electrostatic charge is gathered on the repairing wire is solved, and reliability and yield of a thin film transistor liquid crystal display are improved. Especially, the electrostatic charge gathered on the repairing wire is guided into the common electrode wire and is effectively removed by utilizing connection of the common electrode wire and a fixed potential.
Description
Technical field
The present invention relates to the LCD Technology field, particularly a kind of TFT-LCD array base palte and manufacture method thereof.
Background technology
Thin Film Transistor-LCD (TFT-LCD) has low-voltage, little power consumption, shows advantages such as containing much information, be easy to colorize, occupied leading position in current monitor market.It has been widely used in the electronic equipments such as robot calculator, electronic notebook, mobile phone, video camera, HDTV.
Thin Film Transistor-LCD comprises array base palte and the color membrane substrates that box is formed, and is filled in the liquid crystal layer in gap between array base palte and color membrane substrates.Described Thin Film Transistor-LCD shows that the ultimate principle of image is: by apply the electric field that acts on liquid crystal layer on described array base palte and color membrane substrates, control the orientation of described liquid crystal layer molecule, thereby control what of the irradiation light penetrated the liquid crystal layer molecule, namely reach modulation by the purpose of the light intensity of liquid crystal layer.
In semiconductor devices, static discharge (Electro Static Discharge, ESD) is a kind of common phenomenon, and static discharge can cause puncturing of insulating medium, thereby causes various damages.And Thin Film Transistor-LCD is all the glass of insulation due to its array base palte and color membrane substrates, thereby the electrostatic charge that produces in manufacture process very easily is gathered on the array base palte and color membrane substrates of glass, and, electrostatic charge can be applied on each rete, thereby produce serious damage of electrostatic discharge, cause the inefficacy of thin film transistor (TFT); The short circuit of transmission line, the problem such as open circuit affect the production yield of product.
Intersect on the array base palte of existing Thin Film Transistor-LCD and be provided with data line and repair line, wherein said data line provides default voltage data to thin film transistor (TFT), in order to liquid crystal deflection degree of controlling each pixel of Thin Film Transistor-LCD etc.; And described repair line in order to repair broken string, improves the yield of array base palte product when the situations such as array base palte appearance broken string.Gate line same layer on described repair line and array base palte forms, and isolates by gate insulation layer between itself and data line.Be easy to assemble a large amount of electrostatic charges on repair line, existence due to static discharge phenomenon, the crossover location of described data line and repair line very easily punctures, thereby causes data line and repair line short circuit, has reduced reliability and the yield of Thin Film Transistor-LCD.
Summary of the invention
The object of the present invention is to provide a kind of TFT-LCD array base palte and manufacture method thereof, be easy to assemble a large amount of electrostatic charges to solve in existing TFT-LCD array base palte on repair line, the crossover location of data line and repair line is very easily because static discharge phenomenon punctures, cause data line and repair line short circuit, reduced the reliability of Thin Film Transistor-LCD and the problem of yield.
For solving the problems of the technologies described above, the invention provides a kind of TFT-LCD array base palte, comprising: comb shape repair line and comb shape public electrode wire; The broach of the broach of described comb shape repair line and described comb shape public electrode wire is oppositely arranged, and end all becomes tip shape; Wherein, described comb shape repair line and described comb shape public electrode wire are positioned at the first metal layer.
Optionally, in described TFT-LCD array base palte, also comprise: amorphous silicon chip, described amorphous silicon chip overlap with the broach of described comb shape repair line and the broach of described comb shape public electrode wire respectively.
Optionally, in described TFT-LCD array base palte, described amorphous silicon chip is positioned at the amorphous silicon layer on described the first metal layer.
Optionally, in described TFT-LCD array base palte, be formed with gate insulation layer between described the first metal layer and described amorphous silicon layer, be provided with opening on described gate insulation layer, described opening exposes the broach of described comb shape repair line and the broach of described comb shape public electrode wire, by described opening, described amorphous silicon chip overlaps with the broach of described comb shape repair line and the broach of described comb shape public electrode wire respectively.
Optionally, in described TFT-LCD array base palte, the distance between the broach end of the broach of described comb shape repair line and described comb shape public electrode wire is 3 microns～5 microns.
Optionally, in described TFT-LCD array base palte, the quantity of the broach of the broach of described comb shape repair line and described comb shape public electrode wire is a plurality of.
Optionally, in described TFT-LCD array base palte, also comprise: gate line, described gate line and described comb shape repair line and comb shape public electrode wire be arranged in parallel, and described gate line is positioned at the first metal layer; Data line, described data line and described comb shape repair line and comb shape public electrode wire are arranged in a crossed manner, and described data line bit is in the second metal level.
Optionally, in described TFT-LCD array base palte, the broach of the broach of described comb shape repair line and described comb shape public electrode wire is over against described data line.
The present invention also provides a kind of manufacture method of TFT-LCD array base palte, comprising: a glass substrate is provided; Form the first metal layer on described glass substrate, form comb shape repair line and comb shape public electrode wire by described the first metal layer, the broach of the broach of described comb shape repair line and described comb shape public electrode wire is oppositely arranged, and end all becomes tip shape.
Optionally, in the manufacture method of described TFT-LCD array base palte, also comprise: form amorphous silicon layer on described the first metal layer, form the amorphous silicon chip by described amorphous silicon layer, described amorphous silicon chip is connected with the broach of described comb shape repair line and the broach of described comb shape public electrode wire.
Optionally, in the manufacture method of described TFT-LCD array base palte, before forming amorphous silicon layer on described the first metal layer, also comprise: form gate insulation layer on described the first metal layer, form opening on described gate insulation layer, described opening exposes the broach of described comb shape repair line and the broach of described comb shape public electrode wire.
Optionally, in the manufacture method of described TFT-LCD array base palte, also comprise: form the second metal level on described amorphous silicon layer, form data line by described the second metal level, described data line and described comb shape repair line and comb shape public electrode wire are arranged in a crossed manner.
In a kind of TFT-LCD array base palte provided by the invention and manufacture method thereof, be oppositely arranged by the broach of comb shape repair line and the broach of comb shape public electrode wire, and end all becomes tip shape, utilize the point discharge effect, eliminate the electrostatic charge on repair line, namely avoided on repair line puncturing the gate insulation layer with the data line isolation because electrostatic charge is assembled too much, the problem that causes data line and repair line short circuit has improved reliability and the yield of Thin Film Transistor-LCD.Especially, the electrostatic charge that is gathered on repair line is imported on public electrode wire, utilize public electrode wire to be connected with set potential, effectively eliminate the electrostatic charge of assembling.
Further, also comprise: the amorphous silicon chip, described amorphous silicon chip is connected with the broach of described comb shape repair line and the broach of described comb shape public electrode wire.By the avalanche and discharge effect of described amorphous silicon chip, improve quantity and speed that the electrostatic charge on repair line discharges.Further improve reliability and the yield of Thin Film Transistor-LCD.
Description of drawings
Fig. 1 is the TFT-LCD array base palte partial structurtes schematic diagram of the embodiment of the present invention one;
Fig. 2 is that TFT-LCD array base palte shown in Figure 1 is along the diagrammatic cross-section of AA ';
Fig. 3 is the TFT-LCD array base palte partial structurtes schematic diagram of the embodiment of the present invention two;
Fig. 4 is that the described TFT-LCD array base palte of Fig. 3 is along the diagrammatic cross-section of BB '.
Embodiment
Below in conjunction with the drawings and specific embodiments, TFT-LCD array base palte provided by the invention and manufacture method thereof are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, a kind of TFT-LCD array base palte and manufacture method thereof are provided, be oppositely arranged by the broach of comb shape repair line and the broach of comb shape public electrode wire, and end all becomes tip shape, utilize the point discharge effect, eliminate the electrostatic charge on repair line, namely avoided on repair line because electrostatic charge is assembled too much, puncture the gate insulation layer with the data line isolation, the problem that causes data line and repair line short circuit has improved reliability and the yield of Thin Film Transistor-LCD.Especially, the electrostatic charge that is gathered on repair line is imported on public electrode wire, utilize public electrode wire to be connected with set potential, effectively eliminate the electrostatic charge of assembling.
Implement profit one
Please refer to Fig. 1 and Fig. 2, wherein, Fig. 1 is the TFT-LCD array base palte partial structurtes schematic diagram of the embodiment of the present invention one; Fig. 2 is that TFT-LCD array base palte shown in Figure 1 is along the diagrammatic cross-section of AA '.As shown in Figure 1, TFT-LCD array base palte 1 comprises:
Comb shape repair line 11 and comb shape public electrode wire 12;
The broach 112 of described comb shape repair line 11 is oppositely arranged with the broach 122 of described comb shape public electrode wire 12, and end all becomes tip shape;
Wherein, described comb shape repair line 11 is positioned at the first metal layer with described comb shape public electrode wire 12.
Concrete, described comb shape repair line 11 comprises comb body 111 and broach 112, described comb body 111 is connected with broach 112 one; Described comb shape public electrode wire 12 comprises comb body 121 and broach 122, and described comb body 121 is connected with broach 122 one.For comb body, the broach of the convenience of describing and the comb body that makes the comb shape repair line, broach and comb shape public electrode wire distinguishes, in the following description, comb body 111 and the broach 112 of comb shape repair line 11 is called repair line comb body 111 and repair line broach 112; Comb body 121 and the broach 122 of comb shape public electrode wire 12 are called concentric line comb body 121 and concentric line broach 122.
Be oppositely arranged by repair line broach 112 and concentric line broach 122, and repair line broach 112 end 112a and concentric line broach 122 end 122a all become tip shape, utilize the point discharge effect, eliminate the electrostatic charge on repair line, namely avoided on repair line because electrostatic charge is assembled too much, puncture the gate insulation layer of isolating with data line, cause the problem of data line and repair line short circuit, improved reliability and the yield of Thin Film Transistor-LCD.Especially, the electrostatic charge that is gathered on repair line is imported on public electrode wire, utilize public electrode wire to be connected with set potential, effectively eliminate the electrostatic charge of assembling.
In the present embodiment, described TFT-LCD array base palte 1 also comprises: data line 13, and described data line 13 is arranged in a crossed manner with described comb shape repair line 11 and comb shape public electrode wire 12, and described data line 13 is positioned at the second metal level; The gate line (not shown in figure 1), described gate line and described comb shape repair line 11 and comb shape public electrode wire 12 be arranged in parallel, and described gate line is positioned at the first metal layer.In addition, also be provided with gate insulation layer between described gate line, comb shape repair line 11, comb shape public electrode wire 12 and described data line 13, in order to described gate line, comb shape repair line 11, comb shape public electrode wire 12 are isolated with described data line 13.
Preferably, the distance between described repair line broach 112 end 112a and concentric line broach 122 end 122a is 3 microns～5 microns, thereby effectively utilizes the point discharge effect, improves quantity and speed that the electrostatic charge on repair line discharges.Further improve reliability and the yield of Thin Film Transistor-LCD.
In the present embodiment, the quantity of described repair line broach 112 and concentric line broach 122 is a plurality of.Further, described repair line broach 112 and concentric line broach 122 be over against described data line 13, refers to that at this described repair line broach 112 and concentric line broach 122 are overlapping or overlap in the projection on glass substrate and the projection of described data line 13 on glass substrate.By the discharge effect of 122 of a plurality of repair line broach 112 and concentric line broach, can improve quantity and speed that the electrostatic charge on repair line discharges.Simultaneously, described repair line broach 112 and concentric line broach 122 are arranged at over against the position of described data line 13, can further improve burst size and the speed of the electrostatic charge on the repair line of comb shape repair line 11 and data line 13 infalls, thereby further improve reliability and the yield of Thin Film Transistor-LCD.
Accordingly, the present invention also provides a kind of manufacture method of above-mentioned TFT-LCD array base palte, at this, and can be with reference to figure 1 and Fig. 2.The manufacture method of described TFT-LCD array base palte comprises:
One glass substrate 10 is provided;
Form the first metal layer (not shown) on described glass substrate 10, form comb shape repair line 11 and comb shape public electrode wire 12 by described the first metal layer, the broach 112 of described comb shape repair line 11 is oppositely arranged with the broach 122 of described comb shape public electrode wire 12, and end 112a, 122a all become tip shape.
At this, comprise by described the first metal layer formation comb shape repair line 11 and comb shape public electrode wire 12: form photoresist layer on described the first metal layer; Described photoresist layer is exposed and developing process, form the patterning photoresist layer; Etching first metal layer is removed the unsheltered part the first metal layer of patterning photoresist layer, forms comb shape repair line 11 and comb shape public electrode wire 12.
Certainly, the grid that utilizes this first metal layer also can form simultaneously gate line and be connected with described gate line, described gate line and described comb shape repair line 11 and comb shape public electrode wire 12 be arranged in parallel.Be the formation of described comb shape repair line 11 and comb shape public electrode wire 12, utilized the processing procedure of existing TFT-LCD array base palte, thereby in the electrostatic charge on realize eliminating repair line, but also simplified manufacturing technique reduces manufacturing cost.
Then, can form gate insulation layer on described the first metal layer, in order to the data line isolation with gate line, comb shape repair line, comb shape public electrode wire and follow-up formation; Form amorphous silicon layer on described gate insulation layer, in order to form the functional structure PN junction of thin film transistor (TFT); Form the second metal level on described gate insulation layer, in order to source electrode, the drain electrode that forms data line and be connected with described data line.
Embodiment two
Please refer to Fig. 3 and Fig. 4, wherein, Fig. 3 is the TFT-LCD array base palte partial structurtes schematic diagram of the embodiment of the present invention two; Fig. 4 is that TFT-LCD array base palte shown in Figure 3 is along the diagrammatic cross-section of BB '.As shown in Figure 3, TFT-LCD array base palte 2 comprises:
Comb shape repair line 21 and comb shape public electrode wire 22;
The broach 212 of described comb shape repair line 21 is oppositely arranged with the broach 222 of described comb shape public electrode wire 22, and end all becomes tip shape;
Wherein, described comb shape repair line 21 is positioned at the first metal layer with described comb shape public electrode wire 22;
The difference of the present embodiment and embodiment one is, also comprises: amorphous silicon chip 24, described amorphous silicon chip 24 overlaps with the broach 212 of described comb shape repair line 21 and the broach 222 of described comb shape public electrode wire 22.By the avalanche and discharge effect of described amorphous silicon chip 24, improve quantity and speed that the electrostatic charge on repair line discharges.Further improve reliability and the yield of Thin Film Transistor-LCD.
In the present embodiment, described amorphous silicon chip 24 is positioned at the amorphous silicon layer on described the first metal layer.Herein, term " on " refer to adjacent upper strata or non-adjacent upper strata.
Accordingly, the present invention also provides a kind of manufacture method of above-mentioned TFT-LCD array base palte, at this, and can be with reference to figure 3 and Fig. 4.The manufacture method of described TFT-LCD array base palte comprises:
One glass substrate 20 is provided;
Form the first metal layer (not shown) on described glass substrate 20, form comb shape repair line 21 and comb shape public electrode wire 22 by described the first metal layer, the broach 212 of described comb shape repair line 21 is oppositely arranged with the broach 222 of described comb shape public electrode wire 22, and end 212a, 222a all become tip shape;
Form the amorphous silicon layer (not shown) on described the first metal layer, form amorphous silicon chip 24 by described amorphous silicon layer, described amorphous silicon chip 24 is connected with the broach 212 of described comb shape repair line 21 and the broach 222 of described comb shape public electrode wire 22.
In the present embodiment, the processing procedure of described amorphous silicon chip 24 utilizes the processing procedure of existing TFT-LCD array base palte.Especially, utilization forms amorphous silicon layer on gate insulation layer, in order to this existing TFT-LCD array base palte processing procedure of functional structure PN junction that forms thin film transistor (TFT), this amorphous silicon layer of photoetching and etching forms amorphous silicon chip 24, thereby but simplified manufacturing technique reduces manufacturing cost.Please refer to Fig. 4, wherein, in order to make described amorphous silicon chip 24 be connected with repair line broach 212 and concentric line broach 222, need to form gate insulation layer opening 25a on gate insulation layer 25, described opening 25a exposed portions serve or whole described repair line broach 212 and concentric line broach 222, by this gate insulation layer opening 25a, described amorphous silicon chip 24 just can be connected with repair line broach 212 and concentric line broach 222.
In other embodiments of the invention, also can not utilize this amorphous silicon layer in existing TFT-LCD array base palte processing procedure, for example, at last layer or the independent amorphous silicon layer that forms of lower one deck of the described the first metal layer of next-door neighbour, to form amorphous silicon chip 24.
Foregoing description is only the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection domain of claims.
Claims (12)
1. a TFT-LCD array base palte, is characterized in that, comprising:
Comb shape repair line and comb shape public electrode wire;
The broach of the broach of described comb shape repair line and described comb shape public electrode wire is oppositely arranged, and end all becomes tip shape;
Wherein, described comb shape repair line and described comb shape public electrode wire are positioned at the first metal layer.
2. TFT-LCD array base palte as claimed in claim 1, is characterized in that, also comprises: amorphous silicon chip, described amorphous silicon chip overlap with the broach of described comb shape repair line and the broach of described comb shape public electrode wire respectively.
3. TFT-LCD array base palte as claimed in claim 2, is characterized in that, described amorphous silicon chip is positioned at the amorphous silicon layer on described the first metal layer.
4. TFT-LCD array base palte as claimed in claim 3, it is characterized in that, be formed with gate insulation layer between described the first metal layer and described amorphous silicon layer, be provided with opening on described gate insulation layer, described opening exposes the broach of described comb shape repair line and the broach of described comb shape public electrode wire, by described opening, described amorphous silicon chip overlaps with the broach of described comb shape repair line and the broach of described comb shape public electrode wire respectively.
5. TFT-LCD array base palte as claimed in claim 1 or 2, is characterized in that, the distance between the broach end of the broach of described comb shape repair line and described comb shape public electrode wire is 3 microns～5 microns.
6. TFT-LCD array base palte as claimed in claim 1 or 2, is characterized in that, the quantity of the broach of the broach of described comb shape repair line and described comb shape public electrode wire is a plurality of.
7. TFT-LCD array base palte as claimed in claim 1 or 2, is characterized in that, also comprises:
Gate line, described gate line and described comb shape repair line and comb shape public electrode wire be arranged in parallel, and described gate line is positioned at the first metal layer;
Data line, described data line and described comb shape repair line and comb shape public electrode wire are arranged in a crossed manner, and described data line bit is in the second metal level.
8. TFT-LCD array base palte as claimed in claim 7, is characterized in that, the broach of the broach of described comb shape repair line and described comb shape public electrode wire is over against described data line.
9. the manufacture method of a TFT-LCD array base palte as claimed in claim 1, is characterized in that, comprising:
One glass substrate is provided;
Form the first metal layer on described glass substrate, form comb shape repair line and comb shape public electrode wire by described the first metal layer, the broach of the broach of described comb shape repair line and described comb shape public electrode wire is oppositely arranged, and end all becomes tip shape.
10. the manufacture method of TFT-LCD array base palte as claimed in claim 9, is characterized in that, also comprises:
Form amorphous silicon layer on described the first metal layer, form the amorphous silicon chip by described amorphous silicon layer, described amorphous silicon chip is connected with the broach of described comb shape repair line and the broach of described comb shape public electrode wire.
11. the manufacture method of TFT-LCD array base palte as claimed in claim 10 is characterized in that, before forming amorphous silicon layer on described the first metal layer, also comprises:
Form gate insulation layer on described the first metal layer, form opening on described gate insulation layer, described opening exposes the broach of described comb shape repair line and the broach of described comb shape public electrode wire.
12. TFT-LCD array base palte as described in any one in claim 9 to 11, it is characterized in that, also comprise: form the second metal level on described amorphous silicon layer, form data line by described the second metal level, described data line and described comb shape repair line and comb shape public electrode wire are arranged in a crossed manner.
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| CN201110369741.3A CN103123428B (en) | 2011-11-18 | 2011-11-18 | Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof |
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| CN201110369741.3A CN103123428B (en) | 2011-11-18 | 2011-11-18 | Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof |
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| CN105892184A (en) * | 2016-06-12 | 2016-08-24 | 京东方科技集团股份有限公司 | Repair method and system for short-circuit defect in display panel |
| CN111352281A (en) * | 2020-04-07 | 2020-06-30 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
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| CN105892184A (en) * | 2016-06-12 | 2016-08-24 | 京东方科技集团股份有限公司 | Repair method and system for short-circuit defect in display panel |
| CN111352281A (en) * | 2020-04-07 | 2020-06-30 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
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| Publication number | Publication date |
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| CN103123428B (en) | 2017-05-17 |
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