CN103122479A - Combined crucible for preparing polycrystalline silicon ingot - Google Patents
Combined crucible for preparing polycrystalline silicon ingot Download PDFInfo
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- CN103122479A CN103122479A CN 201110370450 CN201110370450A CN103122479A CN 103122479 A CN103122479 A CN 103122479A CN 201110370450 CN201110370450 CN 201110370450 CN 201110370450 A CN201110370450 A CN 201110370450A CN 103122479 A CN103122479 A CN 103122479A
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Abstract
The invention discloses a combined crucible for preparing a polycrystalline silicon ingot. The combined crucible comprises a quartz crucible and a graphite crucible arranged outside the quartz crucible, wherein the quartz crucible comprises a quartz crucible matrix, a middle transitional layer, a second middle layer and an inner surface coating; the middle transitional layer is arranged on the inner wall of the quartz crucible matrix, the second middle layer is arranged on the middle transitional layer, and the inner surface coating is arranged on the second middle layer; the graphite crucible comprises a bottom plate and side plates around the bottom plate; and the bottom plate has a netty structure. Through above manner, the inner surface of the quartz crucible is a composite coating, so that the adhesive force of the coating is enhanced, the high-temperature resistance of the quartz crucible is improved, and the cost of coating material is lowered; and silicon liquid overflowing from any cracks of the quartz crucible can be immediately guided, namely, the silicon liquid is guided to flow from the gap of the netty structure of the bottom plate, so that the crucible can alarm timely.
Description
Technical field
The present invention relates to field polysilicon, particularly relate to a kind of combination crucible for the polycrystal silicon ingot preparation.
Background technology
In the existing polycrystalline silicon ingot or purifying furnace that uses, the plumbago crucible that is used for the support quartz crucible is all to be made of a base plate and four blocks of side plates, and when silicon hydrorrhea stream occured, silicon liquid flowed on smooth plumbago crucible base plate everywhere, thereby can not in time find, extend the time of fire alarming of accident.
Quartz crucible is one of Important Components of solar energy polycrystal silicon ingot preparation, and the quality of its quality all has material impact to the polysilicon quality of output and the yield of ingot casting production.In the ingot casting production process, reaction between silicon under molten state and quartz crucible material silicon-dioxide, can cause on the one hand the erosion to the quartz crucible surface, various impurity (as iron, boron, aluminium etc.) in aggravation silicon and quartz crucible react, the phenomenon of polycrystal silicon ingot and quartz crucible adhesion occurs, the reaction between silicon and quartz crucible can produce carbon monoxide and oxygen on the other hand.Oxygen can pollute silicon, and carbon monoxide is unstable gas, can with stove in graphite device and silicon material reaction Formed compound and silicon carbide.Silicon carbide further generates unsettled silicon monoxide and carbon with the pasc reaction of melting.Carbon is the same with oxygen, also can pollute silicon.The raising of oxygen level and carbon content in polycrystal silicon ingot can strengthen the photo attenuation of end product cell piece, will have a strong impact on its inherent electric property.For addressing the aforementioned drawbacks, quartz crucible for casting polycrystalline silicon ingot is all wanted before use internal its table and is carried out silicon nitride coating usually, and coating is enough thick, reacts to prevent silicon and quartz crucible, and polycrystal silicon ingot is polluted.
Adopt silicon nitride as coated material, and more than coat-thickness generally will reach 300 μ m, both wasted the time, also cause the quartz crucible cost expensive.In addition, because the nitride of silicon easily peels off, can only carry out at the last moment before use coating, be unfavorable for batch production and the storage of coating quartz crucible.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of combination crucible for the polycrystal silicon ingot preparation, can be when silicon liquid from quartz pincers pot thousand what crack overflows, can both in time guide the flow direction of silicon liquid, can also strengthen in addition the whole high-temperature resistance of quartz crucible, strengthen coating adhesion, reduce the coating material cost.
for solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of combination crucible for the polycrystal silicon ingot preparation is provided, comprise: quartz crucible and the plumbago crucible that is arranged on the quartz crucible outside, described quartz crucible comprises the quartz crucible matrix, intermediate layer, the second middle layer and coating on inner surface, described quartz crucible matrix inwall is provided with intermediate layer, described intermediate layer is provided with the second middle layer, described the second middle layer is provided with coating on inner surface, described plumbago crucible comprises base plate and is arranged on the side plate of base plate surrounding, described base plate has reticulated structure.
In a preferred embodiment of the present invention, the material of described intermediate layer is silicon, and thickness is between 300～600 μ m.
In a preferred embodiment of the present invention, the material in described the second middle layer is silicon-dioxide and silicon nitride, and thickness is between 50～100 μ m.
In a preferred embodiment of the present invention, the material of described coating on inner surface is silicon nitride, silicon-dioxide and silicon, and thickness is between 300～600 μ m.
In a preferred embodiment of the present invention, described reticulated structure is at least two-layer.
In a preferred embodiment of the present invention, described cancellated structure is honeycombed.
The invention has the beneficial effects as follows: the combination crucible that is used for the polycrystal silicon ingot preparation that the present invention discloses has the following advantages:
1, can guarantee in time to guide the flow direction of silicon liquid when silicon liquid overflows from quartz crucible any crack, namely guide silicon liquid to flow down from the gap of the network-like structure of base plate, thereby can reach alarm.
2, the sticking power of compound coating on the quartz crucible matrix that silicon-dioxide is made is obviously promoted, and can effectively strengthen the whole high-temperature resistance of quartz crucible, has improved the softening temperature of quartz crucible.
3, composite coating material can because peeling phenomenon appears in the time variation, not be conducive to carry out quartz crucible coating batch production and long-time the storage.
4, adopt composite coating material to replace high purity silicon nitride, can greatly reduce the coating material cost.
5, strengthen the sticking power of quartz crucible inner surface coating, can prevent effectively that silicon ingot and quartz crucible contact site from being polluted and the silicon-dioxide that breaks and the reaction between silicon, be beneficial to the more highly purified polycrystal silicon ingot of production.
Description of drawings
Fig. 1 is the structural representation of a preferred embodiment of the present invention's combination crucible of being used for polycrystal silicon ingot preparation;
Fig. 2 be shown in the structural representation of base plate;
In accompanying drawing, the mark of each parts is as follows: 1, side plate, 2, the quartz crucible matrix, 3, intermediate layer, the 4, second middle layer, 5, coating on inner surface, 6, base plate.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made more explicit defining.
See also Fig. 1 and Fig. 2, the embodiment of the present invention comprises:
A kind of combination crucible for the polycrystal silicon ingot preparation, comprise: quartz crucible and the plumbago crucible that is arranged on the quartz crucible outside, described quartz crucible comprises quartz crucible matrix 2, intermediate layer 3, the second middle layer 4 and coating on inner surface 5, described quartz crucible matrix 2 inwalls are provided with intermediate layer 3, described intermediate layer 3 is provided with the second middle layer 4, described the second middle layer 4 is provided with coating on inner surface 5, described plumbago crucible comprises base plate 6 and the side plate 1 that is arranged on the base plate surrounding, and described base plate 6 has reticulated structure.
Quartz crucible in the present invention is according to quartz crucible in use step and the length of calcination time of heat, the coated material that employing has different thermal properties carries out coating at quartz crucible matrix higher slice, improve the corrosion resistance of quartz crucible, reach the purpose that reduces silicon and quartz crucible response intensity.
The preparation process of quartz crucible in the present invention: at first, found out the quartz crucible matrix 2 of being made by silicon-dioxide according to the general requirement of quartz crucible; Then at the intermediate layer 3 of described quartz crucible matrix internal surface coating thickness between 300～600 μ m, the coated material of employing is that concentration is the silicon of 50-100%; Secondly carry out the secondary spraying on intermediate layer 3 surfaces, generate second middle layer 4 of thickness between 50～100 μ m, coated material is that silicon-dioxide and concentration are 50% silicon nitride; Again spray on 4 surfaces, the second middle layer at last, forming thickness is 300～600 μ m coating on inner surface 5, and coated material is that 50～100% silicon nitride adds 50% silicon monoxide and 20% silicon.
Described intermediate layer 3, the second middle layer 4 and coating on inner surface 5 have formed compound coating, the sticking power of described compound coating on the quartz crucible matrix 2 that silicon-dioxide is made is obviously promoted, described compound coating can effectively strengthen the whole high-temperature resistance of quartz crucible, improved the softening temperature of quartz crucible, described composite coating material can because peeling phenomenon appears in the time variation, not be conducive to carry out quartz crucible coating batch production and long-time the storage; Adopt composite coating material to replace high purity silicon nitride, can greatly reduce the coating material cost, strengthened the sticking power of quartz crucible coating, can prevent effectively that silicon ingot and quartz crucible contact site from being polluted and the silicon monoxide that breaks and the reaction between silicon, be beneficial to the more highly purified polycrystal silicon ingot of production.
Described base plate 6 has reticulated structure.When the crack appears in the quartz crucible that supports when plumbago crucible, no matter the crack appears at any position of quartz crucible, due to action of gravitation, the silicon liquid that overflows all flows to base plate 6, and this moment is owing to having reticulated structure on base plate 6, so base plate 6 all has the space on whole plane, when the silicon liquid that overflows flowed to base plate 6, just the space from reticulated structure flowed down in time so, thereby can in time flow to the warning device that is arranged on base plate 6 belows, and alarm, anti-expansion than accident.
The reticulated structure that described base plate 6 adopts is multilayer, not only can guarantee the intensity of base plate 6, and can conveniently heat quartz crucible.
The cancellated structure of described base plate 6 is honeycombeds, can strengthen like this intensity of base plate, also facilitates quartz crucible is heated.
In the present invention, quartz crucible inner surface adopts compound coating, strengthened coating adhesion, improved the quartz crucible high-temperature resistance, can reduce the coated material cost, can prevent effectively that silicon ingot and quartz crucible contact site from being polluted and the silicon-dioxide that breaks and the reaction between silicon, be beneficial to the more highly purified polycrystal silicon ingot of production; Can also guarantee in time to guide the flow direction of silicon liquid when silicon liquid overflows from quartz crucible any crack, namely guide silicon liquid to flow down from the gap of the network-like structure of base plate, thereby can reach alarm.
The above is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification sheets of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present invention.
Claims (6)
1. one kind is used for the combination crucible that polycrystal silicon ingot prepares, it is characterized in that, comprise: quartz crucible and the plumbago crucible that is arranged on the quartz crucible outside, described quartz crucible comprises quartz crucible matrix, intermediate layer, the second middle layer and coating on inner surface, described quartz crucible matrix inwall is provided with intermediate layer, described intermediate layer is provided with the second middle layer, described the second middle layer is provided with coating on inner surface, described plumbago crucible comprises base plate and the side plate that is arranged on the base plate surrounding, and described base plate has reticulated structure.
2. the combination crucible for the polycrystal silicon ingot preparation according to claim 1, is characterized in that, the material of described intermediate layer is silicon, and thickness is between 300～600 μ m.
3. the combination crucible for the polycrystal silicon ingot preparation according to claim 1, is characterized in that, the material in described the second middle layer is silicon-dioxide and silicon nitride, and thickness is between 50～100 μ m.
4. the combination crucible for the polycrystal silicon ingot preparation according to claim 1, is characterized in that, the material of described coating on inner surface is silicon nitride, silicon-dioxide and silicon, and thickness is between 300～600 μ m.
5. the combination crucible for the polycrystal silicon ingot preparation according to claim 1, is characterized in that, described reticulated structure is at least two-layer.
6. the combination crucible for the polycrystal silicon ingot preparation according to claim 1, is characterized in that, described cancellated structure is honeycombed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110370450 CN103122479A (en) | 2011-11-21 | 2011-11-21 | Combined crucible for preparing polycrystalline silicon ingot |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110370450 CN103122479A (en) | 2011-11-21 | 2011-11-21 | Combined crucible for preparing polycrystalline silicon ingot |
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| CN103122479A true CN103122479A (en) | 2013-05-29 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103673601A (en) * | 2013-11-14 | 2014-03-26 | 江苏博迁新材料有限公司 | Heterogeneous multi-layer crucible |
| WO2014194832A1 (en) * | 2013-06-07 | 2014-12-11 | 英利能源（中国）有限公司 | Coating structure for crucible, fabrication method thereof, and crucible comprising same |
| CN109285801A (en) * | 2018-07-04 | 2019-01-29 | 横店集团东磁股份有限公司 | A method of solving two-sided aluminium oxide structure PERC battery graphite boat pollution |
| CN111286782A (en) * | 2020-02-24 | 2020-06-16 | 邓勇 | Monocrystalline silicon production furnace body |
-
2011
- 2011-11-21 CN CN 201110370450 patent/CN103122479A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014194832A1 (en) * | 2013-06-07 | 2014-12-11 | 英利能源（中国）有限公司 | Coating structure for crucible, fabrication method thereof, and crucible comprising same |
| CN103673601A (en) * | 2013-11-14 | 2014-03-26 | 江苏博迁新材料有限公司 | Heterogeneous multi-layer crucible |
| CN109285801A (en) * | 2018-07-04 | 2019-01-29 | 横店集团东磁股份有限公司 | A method of solving two-sided aluminium oxide structure PERC battery graphite boat pollution |
| CN109285801B (en) * | 2018-07-04 | 2021-05-14 | 横店集团东磁股份有限公司 | Method for solving graphite boat pollution of PERC battery with double-sided alumina structure |
| CN111286782A (en) * | 2020-02-24 | 2020-06-16 | 邓勇 | Monocrystalline silicon production furnace body |
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Application publication date: 20130529 |