CN102400214A - Quartz crucible with composite coating layers for preparing polycrystalline silicon ingot - Google Patents
Quartz crucible with composite coating layers for preparing polycrystalline silicon ingot Download PDFInfo
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- CN102400214A CN102400214A CN2010102861990A CN201010286199A CN102400214A CN 102400214 A CN102400214 A CN 102400214A CN 2010102861990 A CN2010102861990 A CN 2010102861990A CN 201010286199 A CN201010286199 A CN 201010286199A CN 102400214 A CN102400214 A CN 102400214A
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- quartz crucible
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Abstract
The invention discloses a quartz crucible with composite coating layers for preparing a polycrystalline silicon ingot, which comprises a matrix, an intermediate transitional layer, a second intermediate layer and an inner surface coating layer. The inner wall of the matrix is provided with the intermediate transitional layer; the intermediate transitional layer is provided with the second intermediate layer; and the second intermediate layer is provided with the inner surface coating layer. By using the quartz crucible with the composite coating layers for preparing the polycrystalline silicon ingot, according to the high-temperature heating steps and the calcining time of the quartz crucible in a usage process, the corrosion resistance capability of the quartz crucible is improved by adopting coating layer materials with different thermal performance to hierarchically coat the matrix of the quartz crucible, thereby achieving the purpose of decreasing the response strength of silicon and the quartz crucible.
Description
Technical field
The present invention relates to the photovoltaic field, be specifically related to the compound coating quartz crucible that a kind of sun power ingot casting polysilicon prepares usefulness.
Background technology
Quartz crucible is one of important components and parts of solar energy polycrystal silicon ingot preparation, and the quality of its quality all has material impact to the polysilicon quality of output and the yield of ingot production.In the ingot production process; Reaction between silicon under the molten state and the quartz crucible material silicon-dioxide; Can cause erosion on the one hand to the quartz crucible surface; Various impurity (like iron, boron, aluminium etc.) in aggravation silicon and the quartz crucible react, and the phenomenon of polycrystal silicon ingot and quartz crucible adhesion occurs, and the reaction between silicon and quartz crucible can produce carbon monoxide and oxygen on the other hand.Oxygen can pollute silicon, and carbon monoxide is unstable gas, can generate carbide and silit with graphite device and the reaction of silicon material in the stove.Silit further generates unsettled silicon monoxide and carbon with the fused pasc reaction.Carbon is the same with oxygen, also can pollute silicon.The raising of oxygen level and carbon content in the polycrystal silicon ingot can strengthen the photo attenuation of end product battery sheet, will have a strong impact on its inherent electric property.For addressing the aforementioned drawbacks, polycrystalline silicon ingot casting all wants internal its surface to carry out silicon nitride coating with quartz crucible before use usually, and coating is enough thick, reacts to prevent silicon and quartz crucible, and polycrystal silicon ingot is polluted.
Adopt silicon nitride as coated material, and coat-thickness generally to reach more than the 300 μ m, both waste the time, also cause the quartz crucible cost expensive.In addition,, can only carry out coating before use at the last moment, be unfavorable for the batch process and the storage of coating quartz crucible because the nitride of silicon peels off easily.
Summary of the invention
The objective of the invention is in order to overcome the deficiency of prior art, a kind of compound coating quartz crucible that is used for the polycrystal silicon ingot preparation is provided.
The technical scheme that the present invention adopts is: a kind of compound coating quartz crucible that is used for the polycrystal silicon ingot preparation; Comprise matrix, intermediate layer, second middle layer and coating on inner surface; The inwall of said matrix is provided with intermediate layer; Intermediate layer is provided with second middle layer, and second middle layer is provided with coating on inner surface.
As preferably, said middle transition layer thickness is that the material of intermediate layer is a silicon between the 200-500 μ m.
As preferably, said second intermediate layer thickness is between the 50-100 μ m, and the material in second middle layer is silicon-dioxide and silicon nitride.
As preferably, said coating on inner surface thickness is between the 200-500 μ m, and the material of coating on inner surface is silicon nitride, silicon-dioxide and silicon.
The present invention is according to the quartz crucible in use step of heat and the length of calcination time; The coated material that employing has different thermal properties carries out coating at quartz crucible matrix higher slice; Improve the corrosion resistance of quartz crucible, reach the purpose that reduces silicon and quartz crucible response intensity.
Preparation process of the present invention: the quartz crucible matrix of being processed by silicon-dioxide is founded out in (1) according to the general requirement of quartz crucible; (2) at the intermediate layer of matrix internal surface coating thickness between 200-500 μ m, the coated material of employing is that concentration is the silicon of 50-100%; (3) carry out the secondary spraying at the middle transition laminar surface, generate second middle layer of thickness between 50-100 μ m, coated material is that silicon-dioxide and concentration are 50% silicon nitride; (4) spray once more in second interlayer surfaces, forming thickness is 200-500 μ m coating on inner surface, and coated material is that the silicon nitride of 50-100% adds 50% silicon-dioxide and 20% silicon.
Beneficial effect of the present invention: the sticking power of (1) compound coating on the quartz crucible matrix that silicon-dioxide is processed is obviously promoted; (2) compound coating can effectively strengthen the whole high-temperature resistance of quartz crucible, has improved the softening temperature of quartz crucible; (3) composite coating material can not help carrying out the quartz crucible coating and produce in batches and long-time storage because of peeling phenomenon appears in the time variation; (4) adopt composite coating material to replace high purity silicon nitride, can reduce the coating material cost greatly; (5) strengthened the quartz crucible inner surface adhesive force of coatings, can prevent effectively that silicon ingot and quartz crucible contact site from being polluted and disruptive silicon-dioxide and silicon between reaction, be beneficial to and produce more high-purity polycrystalline ingot.
Description of drawings
Accompanying drawing is a structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is described further:
Shown in accompanying drawing: a kind of compound coating quartz crucible that is used for the polycrystal silicon ingot preparation; Comprise matrix 1, intermediate layer 2, second middle layer 3 and coating on inner surface 4; The inwall of said matrix 1 is provided with intermediate layer 2; Intermediate layer 2 is provided with 3, the second middle layers 3, second middle layer and is provided with coating on inner surface 4.
Said intermediate layer 2 thickness are that the material of intermediate layer 2 is a silicon between the 200-500 μ m.Said second middle layer 3 thickness are between the 50-100 μ m, and the material in second middle layer 3 is silicon-dioxide and silicon nitride.Said coating on inner surface 4 thickness are between the 200-500 μ m, and the material of coating on inner surface 4 is silicon nitride, silicon-dioxide and silicon.
Claims (4)
1. one kind is used for the compound coating quartz crucible that polycrystal silicon ingot prepares; It is characterized in that: comprise matrix (1), intermediate layer (2), second middle layer (3) and coating on inner surface (4); The inwall of said matrix (1) is provided with intermediate layer (2); Intermediate layer (2) is provided with second middle layer (3), and second middle layer (3) are provided with coating on inner surface (4).
2. according to the said a kind of compound coating quartz crucible that is used for the polycrystal silicon ingot preparation of claim 1, it is characterized in that: said intermediate layer (2) thickness is between the 200-500 μ m, and the material of intermediate layer (2) is a silicon.
3. according to the said a kind of compound coating quartz crucible that is used for the polycrystal silicon ingot preparation of claim 1, it is characterized in that: said second middle layer (3) thickness is between the 50-100 μ m, and the material of second middle layer (3) is silicon-dioxide and silicon nitride.
4. according to the said a kind of compound coating quartz crucible that is used for the polycrystal silicon ingot preparation of claim 1, it is characterized in that: said coating on inner surface (4) thickness is between the 200-500 μ m, and the material of coating on inner surface (4) is silicon nitride, silicon-dioxide and silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102861990A CN102400214A (en) | 2010-09-16 | 2010-09-16 | Quartz crucible with composite coating layers for preparing polycrystalline silicon ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102861990A CN102400214A (en) | 2010-09-16 | 2010-09-16 | Quartz crucible with composite coating layers for preparing polycrystalline silicon ingot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102400214A true CN102400214A (en) | 2012-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102861990A Pending CN102400214A (en) | 2010-09-16 | 2010-09-16 | Quartz crucible with composite coating layers for preparing polycrystalline silicon ingot |
Country Status (1)
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| CN (1) | CN102400214A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060908A (en) * | 2013-01-06 | 2013-04-24 | 奥特斯维能源（太仓）有限公司 | Dual-layer ceramic crucible |
| CN103604294A (en) * | 2013-10-30 | 2014-02-26 | 江苏博迁新材料有限公司 | Multilayered homogeneous crucible and installation method thereof |
| WO2014194832A1 (en) * | 2013-06-07 | 2014-12-11 | 英利能源（中国）有限公司 | Coating structure for crucible, fabrication method thereof, and crucible comprising same |
| CN107573101A (en) * | 2017-09-13 | 2018-01-12 | 扬州荣德新能源科技有限公司 | A kind of crucible and preparation method thereof |
-
2010
- 2010-09-16 CN CN2010102861990A patent/CN102400214A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060908A (en) * | 2013-01-06 | 2013-04-24 | 奥特斯维能源（太仓）有限公司 | Dual-layer ceramic crucible |
| WO2014194832A1 (en) * | 2013-06-07 | 2014-12-11 | 英利能源（中国）有限公司 | Coating structure for crucible, fabrication method thereof, and crucible comprising same |
| CN103604294A (en) * | 2013-10-30 | 2014-02-26 | 江苏博迁新材料有限公司 | Multilayered homogeneous crucible and installation method thereof |
| CN103604294B (en) * | 2013-10-30 | 2016-06-22 | 江苏博迁新材料有限公司 | A kind of multilamellar homogeneity crucible and installation method thereof |
| CN107573101A (en) * | 2017-09-13 | 2018-01-12 | 扬州荣德新能源科技有限公司 | A kind of crucible and preparation method thereof |
| CN107573101B (en) * | 2017-09-13 | 2020-12-01 | 扬州荣德新能源科技有限公司 | Crucible and preparation method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20120404 |