CN103115258A - Area light source with built-in light-emitting diode (LED) protective chips - Google Patents
Area light source with built-in light-emitting diode (LED) protective chips Download PDFInfo
- Publication number
- CN103115258A CN103115258A CN2012105888142A CN201210588814A CN103115258A CN 103115258 A CN103115258 A CN 103115258A CN 2012105888142 A CN2012105888142 A CN 2012105888142A CN 201210588814 A CN201210588814 A CN 201210588814A CN 103115258 A CN103115258 A CN 103115258A
- Authority
- CN
- China
- Prior art keywords
- led
- chip
- plated copper
- silver
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses an area light source with built-in light-emitting diode (LED) protective chips. The area light source comprises a ceramic substrate, at least two LED chips, fluorescent powder and a transparent film. The LED chips, the fluorescent powder and the transparent film are arranged on the ceramic substrate. The LED chips and the fluorescent powder are packaged in the transparent film. An area light source anode electrode and an area light source cathode electrode are arranged on the ceramic substrate. The LED chips are connected with each other in series to form an LED chip serial group. An anode end of the LED chip serial group is electrically connected with the area light source anode electrode. A cathode end of the LED chip serial group is electrically connected with the area light source cathode electrode. One LED protective chip is connected in parallel between a cathode and an anode of each LED chip. When the LED chips are in an open-circuit fault, the LED protective chips enable the cathodes and the anodes of the open-circuit LED chips to form a passage. The area light source has an open-circuit protective function, using is convenient, cost is low, and reliability is high.
Description
Technical field
The invention belongs to the LED area source of LED lighting field, be specifically related to a kind of area source of built-in LED protection chip.
Background technology
Built-in a plurality of LED chips of existing LED area source and there is no built-in LED protection chip, it is comprised of LED substrate, LED chip, spun gold line, fluorescent material and light-transmissive film.LED is as the new generation of semiconductor luminescent device, and the characteristics such as it has, and light efficiency is high, life-span length, environmental protection and energy saving are constantly replacing the traditional lighting technology and extremely attention.In LED illumination and LED-backlit etc. are used, often need a plurality of LED series connection or connection in series-parallel to use to simplify circuit, reduce costs and improve driving power efficient.When damaging due to LED, major part is all self open-circuit condition, and this can make the LED of whole series connection all lose efficacy.The effect of LED Protective IC is protection LED, and when open fault occured a LED, the LED Protective IC can make the light emitting diode both positive and negative polarity of open circuit form path, to guarantee other LED normal operation of serial connection with it.But in existing LED area source, its LED holding circuit all is placed in LED lamp pearl and LED area source outside, uses inconvenience, and cost is high.
Summary of the invention
The object of the present invention is to provide a kind of LED area source of built-in protection LED chip.The LED area source of this built-in LED protection chip is easy to use, and cost is low, and reliability is high.
For realizing above-mentioned technical purpose problem, the technical scheme that the present invention takes is: the area source of built-in LED protection chip comprises ceramic substrate, at least two LED chips, fluorescent material and hyaline membranes; Described LED chip, fluorescent material and hyaline membrane are arranged on ceramic substrate; Described LED chip and fluorescent powder packaging are in hyaline membrane; Also be provided with area source positive electrode and area source negative electrode on described ceramic substrate; Series connection mutually between each LED chip forms LED chip string group; The positive terminal of described LED chip string group is electrically connected to the area source positive electrode, and the negative pole end of described LED chip string group is electrically connected to the area source negative electrode; Described it is characterized in that: also be parallel with a LED protection chip between the positive pole of each LED chip and negative pole, when LED chip generation open fault, LED protection chip makes between the positive pole of LED chip of open circuit and negative pole and forms path.
As further improved technical scheme of the present invention, described LED chip is three, is respectively the first LED chip, the second LED chip and the 3rd LED chip; Also comprise four substrate silver-plated copper chafves, be respectively first, second substrate silver-plated copper chaff, the 3rd substrate silver-plated copper chaff and tetrabasal silver-plated copper chaff; Accordingly, described LED protection chip is also three, is respectively a LED protection chip, the 2nd LED protection chip and the 3rd LED protection chip;
The area source positive electrode is electrically connected to first substrate silver-plated copper chaff; The positive electrode of the first LED chip electrically connects by the first spun gold pressure welding line and first substrate silver-plated copper chaff; The negative electrode of the first LED chip electrically connects by the second spun gold pressure welding line and second substrate silver-plated copper chaff; The positive electrode of the second LED chip electrically connects by the 3rd spun gold pressure welding line and second substrate silver-plated copper chaff; The negative electrode of the second LED chip electrically connects by the 4th spun gold pressure welding line and the 3rd substrate silver-plated copper chaff; The positive electrode of the 3rd LED chip electrically connects by five metals silk pressure welding line and the 3rd substrate silver-plated copper chaff; The negative electrode of the 3rd LED chip electrically connects by the 6th spun gold pressure welding line and tetrabasal silver-plated copper chaff; The area source negative electrode is electrically connected to tetrabasal silver-plated copper chaff;
The positive electrode of the one LED protection chip electrically connects by the 7th spun gold pressure welding line and first substrate silver-plated copper chaff; The negative electrode of the one LED protection chip electrically connects by the 8th spun gold pressure welding line and second substrate silver-plated copper chaff; The positive electrode of the 2nd LED protection chip electrically connects by the 9th spun gold pressure welding line and second substrate silver-plated copper chaff; The negative electrode of the 2nd LED protection chip electrically connects by the tenth spun gold pressure welding line and the 3rd substrate silver-plated copper chaff; The positive electrode of the 3rd LED protection chip electrically connects by the 11 spun gold pressure welding line and the 3rd substrate silver-plated copper chaff; The negative electrode of the 3rd LED protection chip electrically connects by the 12 spun gold pressure welding line and tetrabasal silver-plated copper chaff.
The present invention adopts existing LED lamp bead seal packing technique, protects chip directly to be encapsulated in the LED area source LED, and the pressure welding technology of application LED maturation is connected the both positive and negative polarity of a LED protection chip of each LED chip both positive and negative polarity and correspondence respectively.The present invention has open circuit protecting function, and is easy to use, and cost is low, and reliability is high.
Description of drawings
Fig. 1 is the area source structural representation of this built-in LED protection chip in embodiment 1.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.
The specific embodiment
Referring to Fig. 1, the area source of this built-in LED protection chip comprises ceramic substrate 3, at least two LED chips, fluorescent material and hyaline membranes; Described LED chip, fluorescent material and hyaline membrane are arranged on ceramic substrate 3; Described LED chip and fluorescent powder packaging are in hyaline membrane; Also be provided with area source positive electrode 1 and area source negative electrode 2 on described ceramic substrate 3; Series connection mutually between each LED chip forms LED chip string group; The positive terminal of described LED chip string group is electrically connected to area source positive electrode 1, and the negative pole end of described LED chip string group is electrically connected to area source negative electrode 2; Also be parallel with a LED protection chip between the positive pole of each LED chip and negative pole, when LED chip generation open fault, LED protection chip makes between the positive pole of LED chip of open circuit and negative pole and forms path.
In the present embodiment, described LED chip is three, is respectively the first LED chip 4, the second LED chip 5 and the 3rd LED chip 6; Also comprise four substrate silver-plated copper chafves, be respectively first substrate silver-plated copper chaff 10, second substrate silver-plated copper chaff 11, the 3rd substrate silver-plated copper chaff 12 and tetrabasal silver-plated copper chaff 13; Accordingly, described LED protection chip is also three, is respectively a LED protection chip 7, the 2nd LED protection chip 8 and the 3rd LED protection chip 9;
Area source positive electrode 1 is electrically connected to first substrate silver-plated copper chaff 10; The positive electrode 4-1 of the first LED chip 4 electrically connects with first substrate silver-plated copper chaff 10 by the first spun gold pressure welding line 14; The negative electrode 4-2 of the first LED chip 4 electrically connects with second substrate silver-plated copper chaff 11 by the second spun gold pressure welding line 15; The positive electrode 5-1 of the second LED chip 5 electrically connects with second substrate silver-plated copper chaff 11 by the 3rd spun gold pressure welding line 16; The negative electrode 5-2 of the second LED chip 5 electrically connects by the 4th spun gold pressure welding line 17 and the 3rd substrate silver-plated copper chaff 12; The positive electrode 6-1 of the 3rd LED6 chip electrically connects by five metals silk pressure welding line 18 and the 3rd substrate silver-plated copper chaff 12; The negative electrode 6-2 of the 3rd LED6 chip electrically connects by the 6th spun gold pressure welding line 19 and tetrabasal silver-plated copper chaff 13; The area source negative electrode is electrically connected to tetrabasal silver-plated copper chaff 13;
The positive electrode 7-1 of the one LED protection chip 7 electrically connects with first substrate silver-plated copper chaff 101 by the 7th spun gold pressure welding line 20; The negative electrode 7-2 of the one LED protection chip 7 electrically connects with second substrate silver-plated copper chaff 11 by the 8th spun gold pressure welding line 21; The positive electrode 8-1 of the 2nd LED protection chip 8 electrically connects with second substrate silver-plated copper chaff 11 by the 9th spun gold pressure welding line 22; The negative electrode 8-2 of the 2nd LED protection chip 8 electrically connects by the tenth spun gold pressure welding line 23 and the 3rd substrate silver-plated copper chaff 12; The positive electrode 9-1 of the 3rd LED protection chip 9 electrically connects by the 11 spun gold pressure welding line 24 and the 3rd substrate silver-plated copper chaff 12; The negative electrode 9-2 of the 3rd LED protection chip 9 electrically connects by the 12 spun gold pressure welding line 25 and tetrabasal silver-plated copper chaff 14.
Built-in a plurality of LED chips of existing LED area source and there is no built-in LED protection chip, it is comprised of LED substrate, LED chip, spun gold line, fluorescent material and light-transmissive film.The LED substrate has ceramic substrate, aluminium base etc.The area source of this built-in LED protection chip is built-in LED protection chip in traditional LED area source, and the both positive and negative polarity that makes LED chip respectively the both positive and negative polarity of the LED protection chip corresponding be connected respectively.
Used in the present embodiment is 3 watts of traditional LED area sources; use ceramic substrate; encapsulate the LED chip of 3.2 volts of 3 power 1W electric current 350mA voltages; inner pressure welding spun gold diameter is 10 microns; fluorescent material is traditional white emitting fluorescent powder, and light-transmissive film is traditional light-transmissive film, the LED protection chip that to encapsulate 3 models be L12; the L12 chip is that day Quantum Science and Technology joint-stock company product is asked in Anhui.The size of L12 chip is 0.6mm*0.62mm, and the on state threshold voltage of L12 is 6 ~ 9 volts, and conducting voltage is less than 1.1 volts, and cut-off current is less than 10 microamperes.
In the present embodiment, also can adopt for example 0.5 watt of 175mALED chip of the suitable LED chip of other specification, also can adopt the suitable LED protection chip of other specification.
In the present embodiment, the area source of built-in LED protection chip contains the LED chip of three LED series connection.Can be extended to more LED chip series connection forms, include more LED protection chips.Also can be extended to M group N LED chip series connection form in parallel, include N*M LED chip and N*M LED protection chip.The both positive and negative polarity of the LED protection chip that each LED chip is corresponding with is connected respectively.
The area source of this built-in LED protection chip is used existing LED area source encapsulation technology; protect chip directly to be encapsulated in area source LED, the pressure welding technology of application LED maturation is connected the both positive and negative polarity of a LED protection chip of each LED chip both positive and negative polarity and correspondence respectively.
Claims (2)
1. the area source of a built-in LED protection chip, comprise ceramic substrate (3), at least two LED chips, fluorescent material and hyaline membranes; Described LED chip, fluorescent material and hyaline membrane are arranged on ceramic substrate (3); Described LED chip and fluorescent powder packaging are in hyaline membrane; Also be provided with area source positive electrode (1) and area source negative electrode (2) on described ceramic substrate (3); Series connection mutually between each LED chip forms LED chip string group; The positive terminal of described LED chip string group is electrically connected to area source positive electrode (1), and the negative pole end of described LED chip string group is electrically connected to area source negative electrode (2); Described it is characterized in that: also be parallel with a LED protection chip between the positive pole of each LED chip and negative pole, when LED chip generation open fault, LED protection chip makes between the positive pole of LED chip of open circuit and negative pole and forms path.
2. built-in LED according to claim 1 protects the area source of chip, and it is characterized in that: described LED chip is three, is respectively the first LED chip (4), the second LED chip (5) and the 3rd LED chip (6); Also comprise four substrate silver-plated copper chafves, be respectively first substrate silver-plated copper chaff (10), second substrate silver-plated copper chaff (11), the 3rd substrate silver-plated copper chaff (12) and tetrabasal silver-plated copper chaff (13); Accordingly, described LED protection chip is also three, is respectively a LED protection chip (7), the 2nd LED protection chip (8) and the 3rd LED protection chip (9);
Area source positive electrode (1) is electrically connected to first substrate silver-plated copper chaff (10); The positive electrode (4-1) of the first LED chip (4) electrically connects by the first spun gold pressure welding line (14) and first substrate silver-plated copper chaff (10); The negative electrode (4-2) of the first LED chip (4) electrically connects by the second spun gold pressure welding line (15) and second substrate silver-plated copper chaff (11); The positive electrode (5-1) of the second LED chip (5) electrically connects by the 3rd spun gold pressure welding line (16) and second substrate silver-plated copper chaff (11); The negative electrode (5-2) of the second LED chip (5) electrically connects by the 4th spun gold pressure welding line (17) and the 3rd substrate silver-plated copper chaff (12); The positive electrode (6-1) of the 3rd LED chip (6) electrically connects by five metals silk pressure welding line (18) and the 3rd substrate silver-plated copper chaff (12); The negative electrode (6-2) of the 3rd LED chip (6) electrically connects by the 6th spun gold pressure welding line (19) and tetrabasal silver-plated copper chaff (13); The area source negative electrode is electrically connected to tetrabasal silver-plated copper chaff (13);
The positive electrode (7-1) of the one LED protection chip (7) electrically connects with first substrate silver-plated copper chaff (11) by the 7th spun gold pressure welding line 20; The negative electrode (7-2) of the one LED protection chip (7) electrically connects by the 8th spun gold pressure welding line (21) and second substrate silver-plated copper chaff (11); The positive electrode (8-1) of the 2nd LED protection chip (8) electrically connects by the 9th spun gold pressure welding line (22) and second substrate silver-plated copper chaff (11); The negative electrode (8-2) of the 2nd LED protection chip (8) electrically connects by the tenth spun gold pressure welding line (23) and the 3rd substrate silver-plated copper chaff (12); The positive electrode (9-1) of the 3rd LED protection chip (9) electrically connects by the 11 spun gold pressure welding line (24) and the 3rd substrate silver-plated copper chaff (12); The negative electrode (9-2) of the 3rd LED protection chip (9) electrically connects by the 12 spun gold pressure welding line (25) and tetrabasal silver-plated copper chaff (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105888142A CN103115258A (en) | 2012-12-31 | 2012-12-31 | Area light source with built-in light-emitting diode (LED) protective chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105888142A CN103115258A (en) | 2012-12-31 | 2012-12-31 | Area light source with built-in light-emitting diode (LED) protective chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103115258A true CN103115258A (en) | 2013-05-22 |
Family
ID=48413674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105888142A Pending CN103115258A (en) | 2012-12-31 | 2012-12-31 | Area light source with built-in light-emitting diode (LED) protective chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103115258A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230222939A1 (en) * | 2018-09-14 | 2023-07-13 | De Oro Devices, Inc. | Cueing device and method for treating walking disorders |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030122139A1 (en) * | 2001-12-28 | 2003-07-03 | United Epitaxy Co., Ltd. | Light emitting diode package structure having an electro-static protective diode |
| CN1873974A (en) * | 2005-06-03 | 2006-12-06 | 邢陈震仑 | LED device with protective circuit of diode |
| CN201262338Y (en) * | 2008-08-19 | 2009-06-24 | 张竹成 | LED decorating lamp strings |
| CN102032483A (en) * | 2010-09-27 | 2011-04-27 | 陈炜旻 | Light-emitting diode (LED) plane light source |
| CN202140813U (en) * | 2010-12-31 | 2012-02-08 | 浙江名芯半导体科技有限公司 | Integrally-packaged LED (light emitting diode) light source |
| CN203273323U (en) * | 2012-12-31 | 2013-11-06 | 安徽问天量子科技股份有限公司 | Area light source embedded with LED (Light-Emitting Diode) protection chip |
-
2012
- 2012-12-31 CN CN2012105888142A patent/CN103115258A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030122139A1 (en) * | 2001-12-28 | 2003-07-03 | United Epitaxy Co., Ltd. | Light emitting diode package structure having an electro-static protective diode |
| CN1873974A (en) * | 2005-06-03 | 2006-12-06 | 邢陈震仑 | LED device with protective circuit of diode |
| CN201262338Y (en) * | 2008-08-19 | 2009-06-24 | 张竹成 | LED decorating lamp strings |
| CN102032483A (en) * | 2010-09-27 | 2011-04-27 | 陈炜旻 | Light-emitting diode (LED) plane light source |
| CN202140813U (en) * | 2010-12-31 | 2012-02-08 | 浙江名芯半导体科技有限公司 | Integrally-packaged LED (light emitting diode) light source |
| CN203273323U (en) * | 2012-12-31 | 2013-11-06 | 安徽问天量子科技股份有限公司 | Area light source embedded with LED (Light-Emitting Diode) protection chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230222939A1 (en) * | 2018-09-14 | 2023-07-13 | De Oro Devices, Inc. | Cueing device and method for treating walking disorders |
| US11790804B2 (en) | 2018-09-14 | 2023-10-17 | De Oro Devices, Inc. | Cueing device and method for treating walking disorders |
| US12020587B2 (en) * | 2018-09-14 | 2024-06-25 | De Oro Devices, Inc. | Cueing device and method for treating walking disorders |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201233231A (en) | LED protection circuit | |
| CN103188845B (en) | The LED light emission device of alternating current Direct driver | |
| CN102102862B (en) | Packaging method of micro-volume multi-LED integrated unit | |
| CN203273323U (en) | Area light source embedded with LED (Light-Emitting Diode) protection chip | |
| CN203165941U (en) | LED lamp bead with built-in protection chip | |
| CN101619814B (en) | Directly embedded high-power LED illumination module | |
| CN103115258A (en) | Area light source with built-in light-emitting diode (LED) protective chips | |
| CN203731144U (en) | LED lamp filament bulb | |
| CN202585527U (en) | Packaging structure of novel green light LED | |
| CN211455684U (en) | Multi-color warm filament and lighting device | |
| CN201936915U (en) | LED (light-emitting diode) encapsulating structure and LED module thereof | |
| CN209470049U (en) | A kind of exchange is straight to drive LED light emitting diode | |
| CN203632931U (en) | Protection circuit for driving LED light source COB series combination with switching power supply | |
| CN203250788U (en) | Semiconductor package structure | |
| CN103117354A (en) | Light-emitting diode (LED) lamp bead with built-in protection chip | |
| CN208951719U (en) | A kind of light emitting device and light-emitting component | |
| CN202332954U (en) | Antistatic LED (light emitting diode) packaging structure | |
| CN201219311Y (en) | Protection circuit for LED illumination module | |
| CN105098020B (en) | LED light emitting device | |
| US20110084617A1 (en) | High reliability and long lifetime AC LED device | |
| CN205859624U (en) | Photo engine LED filament | |
| CN203023880U (en) | Light-emitting diode (LED) module with multiple welding feet to carry out power supply | |
| US20110115387A1 (en) | Led lamp and protecting circuit thereof | |
| CN205048393U (en) | Whole light emitting module that encapsulates of ACLED | |
| CN213401201U (en) | LED lamp bead with constant current protection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130522 |
|
| CB02 | Change of applicant information |
Address after: 241003 No. 12, Zhanghe Road, hi tech Zone, Anhui, Wuhu Applicant after: Anhui Asky Quantum Technology Co., Ltd. Address before: 241002 Anhui science and technology innovation public service center, Wuhu national hi tech Zone, Yijiang Applicant before: Anhui Asky Quantum Technology Co., Ltd. |
|
| COR | Change of bibliographic data |