CN103111762A - Method for applying laser drilling to sapphire slice drilling - Google Patents
Method for applying laser drilling to sapphire slice drilling Download PDFInfo
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- CN103111762A CN103111762A CN2013100327019A CN201310032701A CN103111762A CN 103111762 A CN103111762 A CN 103111762A CN 2013100327019 A CN2013100327019 A CN 2013100327019A CN 201310032701 A CN201310032701 A CN 201310032701A CN 103111762 A CN103111762 A CN 103111762A
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Abstract
The invention relates to a method for applying laser drilling to sapphire slice drilling. The method comprises a first step of fixing a sapphire slice on an operating platform of a laser device and enabling a laser emission head of the laser device to be aligned to a position to be drilled on the sapphire slice, a second step of setting parameters of the laser device according to the thickness of the sapphire slice, and a third step of starting the laser device to enable the laser device to emit laser beams towards the position to be drilled on the sapphire slice, wherein the second step comprises a first step of setting parameters of the laser device according to the thickness of the sapphire slice and a formula (1), a second step of determining laser emission frequency of the parameters of the laser device according to determined energy in the parameters of the laser device and a formula (2), a third step of determining feed rate of the parameters of the laser device according to determined laser emission frequency of the parameters of the laser device and a formula (3), a fourth step of setting 0.3-0.5 ms as the wave width of the parameters of the laser device, and a fifth step of adjusting Hgt% of the parameters of the laser device to enable average power of the laser device to be 255 W.
Description
Technical field
The present invention relates to a kind of method that laser boring is applied to the sapphire sheet punching.
Background technology
Laser boring is the laser processing technology that reaches the earliest practical, also is one of main application fields of Laser Processing.Along with developing rapidly of the modern industry and science and technology, use the material that hardness is large, fusing point is high more and more, and traditional processing method can not satisfy some technological requirement.The main carving machine that adopts of existing sapphire sheet punching, so-called carving machine namely refer to use the CNC milling machine of little cutter, high-power and high-speed main spindle motor, and existing carving machine has following defective:
1. the highly-efficient processing material of carving machine is stainless steel material, these low-durometer material of red copper, and sapphire hardness is only second to diamond; Finishing impression is fast for cutter consumption, and the tool changing tool is loaded down with trivial details, and many grinding head tools life-span is short.
Carving machine be fit to do the soft metal fast, heavy cutting, and the sapphire crystal Mohs' hardness is up to 9, existing method is not suitable for it is carried out perforation processing.
3. it is high to the requirement of clamping workpiece to use carving machine to punch, and the tool setting precision relies on large, the difficult online and automation that realizes on the production line.
4. use carving machine to carry out the sapphire sheet punching, pass, aperture are restricted, and are difficult for punching at inclined surface.
Therefore, carving machine be only suitable for doing the soft metal fast, heavy cutting, and very not applicable for cutting high rigidity crystal, thus the present invention mainly wish solve the technical problem of punching in large hardness sapphire sheet.
Summary of the invention
For solving the problems of the technologies described above, the purpose of this invention is to provide and a kind of laser boring is applied to the method for sapphire sheet punching, the large problem of difficulty of large hardness crystal being carried out perforation processing to overcome cutter.
A kind of laser boring is applied to the method for sapphire sheet punching, may further comprise the steps:
S1: sapphire sheet is fixed on the workbench of laser equipment, makes the laser beam emitting head of laser equipment aim at the pre-punch position of sapphire sheet;
S2: according to the thickness of sapphire sheet the parameter of laser equipment is set, this step can be divided into again for 5 steps:
A: according to thickness and formula＜1 of sapphire sheet〉parameter of laser equipment is set;
E＝1.6sqrH <1>
In the formula: the E-energy, unit: joule, H-sapphire sheet thickness, unit: millimeter
B: according to energy and formula＜2 in the laser equipment parameter of determining 〉, determine the Laser emission frequency of laser equipment parameter;
F＝P/E <2>
E-energy in the formula, unit: joule
The mean power of P-laser equipment is constant, and is relevant with lathe, unit: watt
F-Laser emission frequency, namely each second Emission Lasers number of times, unit: Hz
C: according to Laser emission frequency and formula＜3 in the laser equipment parameter of determining 〉, determine the feed rate in the device parameter;
f＝60aF <3>
F-feed rate in the formula, unit: mm/min
A-laser feeding step-length is constant, gets a ≈ 0.1mm
F-Laser emission frequency, unit: Hz
D: the ripple in the setting laser device parameter is wide to be 0.3-0.5ms;
E: adjust the Hgt% in the laser equipment parameter, the value that makes the mean power of laser equipment is 255W.
S3: start laser equipment, finish the punching process by laser equipment to the pre-punch position Emission Lasers bundle of sapphire sheet.
By such scheme, the method that laser boring is applied to sapphire sheet punching of the present invention has the following advantages at least:
1. sapphire (Al
2O
3) be that Mohs' hardness is 9 gem crystal, traditional drilling method also is not suitable for the so high material of hardness, then is not difficult to realize with laser boring.Laser beam is high concentration on room and time, utilizes lens focus, obtains 105-1015W/cm thereby spot diameter can be narrowed down to micron order
2Laser power density.So high power density almost can be carried out laser boring at any material;
2. laser boring speed is fast, and efficient is high, and is good in economic efficiency.Because laser boring is to utilize power density to be 107-109W/cm
2High energy laser beam material is carried out snap, only have several seconds action time, so laser boring speed is very fast;
3. laser boring can obtain large aspect ratio, can obtain common drilling method and be difficult to finish hole shape, the aperture that maybe can not finish;
4. break away from traditional drilling method to the dependence of polishing tool, laser boring is without tool loss;
5. the laser boring clamping workpiece requires simply easily to realize the online and automation on the production line.
The proposition of novelty of the present invention laser drilling is applied to perforation processing to sapphire sheet, overcome prior art to processing the difficult problem that large hardness crystal difficulty is large, cost is high, have substantial progress.
Description of drawings
Fig. 1 is the schematic diagram of sapphire sheet laser boring of the present invention.
Among the figure: 1, workbench; 2, dress is held the table top of sapphire sheet; 3, laser beam; 4, laser beam emitting head.
The specific embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for explanation the present invention, but are not used for limiting the scope of the invention.
As shown in Figure 1, a kind of laser boring is applied to the method for sapphire sheet punching, may further comprise the steps:
S1: sapphire sheet being fixed on the workbench 1 of laser equipment (has dress to hold the table top 2 of sapphire sheet) on the workbench 1, makes the laser beam emitting head 4 of laser equipment aim at the pre-punch position of sapphire sheet;
S2: according to the thickness of sapphire sheet the parameter of laser equipment is set, this step can be divided into again for 5 steps:
A: according to thickness and formula＜1 of sapphire sheet〉parameter of laser equipment is set;
E＝1.6sqrH <1>
In the formula: the E-energy, unit: joule, H-sapphire sheet thickness, unit: millimeter
B: according to energy and formula＜2 in the laser equipment parameter of determining 〉, determine the Laser emission frequency of laser equipment parameter;
F＝P/E <2>
E-energy in the formula, unit: joule,
The mean power of P-laser equipment is constant, and is relevant with lathe, unit: watt
F-Laser emission frequency, namely each second Emission Lasers number of times, unit: Hz
C: according to Laser emission frequency and formula＜3 in the laser equipment parameter of determining 〉, determine the feed rate in the device parameter;
f＝60aF <3>
F-feed rate in the formula, unit: mm/min
A-laser feeding step-length is constant, gets a ≈ 0.1mm
F-Laser emission frequency, unit: Hz
D: the ripple in the setting laser device parameter is wide to be 0.3-0.5ms;
E: adjust the Hgt% in the laser equipment parameter, the value that makes the mean power of laser equipment is 255W.
S3: start laser equipment, finish the punching process by laser equipment to the pre-punch position Emission Lasers bundle 3 of sapphire sheet.
To the laser boring method of sapphire sheet be in fact laser beam focusing on the sapphire sheet surface, make luminous energy change a kind of processing method of heat energy into.The process of the punching of laser thereon, be the laser pulse radiation of certain energy flux density to the mechanism of sapphire material (Al2O3 crystal), the namely fusing of Al2O3 and gasification and part material are dished out with solid phase form.When the effect of pulses of radiation at the beginning, flying out of vapor phase just appears, have the characteristic of injection stream, later increase along with aperture, the degree of depth, fly to kill in the thing material fusing and account for major part, this fusing fluid material forms in sidewall and the bottom in hole, and is squeezed out by the residual compression of steam.When pulse closes on end, owing to the reduction of the logical density of laser energy reduces the discharge rate of splash, energy flux density further reduces, and one causes flying cutting in the thing liquid phase preponderates, when same value that energy flux density begins to destroy near material, only form ironing of surface.After a laser pulse finished, workpiece formed a pit, the laser pulse continuous action, and pit is deepened to strengthen gradually, and to appropriate time, aperture has just formed.
The above only is preferred embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (1)
1. one kind is applied to the method for sapphire sheet punching with laser boring, it is characterized in that: may further comprise the steps:
S1: sapphire sheet is fixed on the workbench of laser equipment, makes the laser beam emitting head of laser equipment aim at the pre-punch position of sapphire sheet;
S2: according to the thickness of sapphire sheet the parameter of laser equipment is set, this step can be divided into again for 5 steps:
A: according to thickness and formula＜1 of sapphire sheet〉parameter of laser equipment is set;
E＝1.6sqrH<1>
In the formula: the E-energy, unit: joule, H-sapphire sheet thickness, unit: millimeter
B: according to energy and formula＜2 in the laser equipment parameter of determining 〉, determine the Laser emission frequency of laser equipment parameter;
F＝P/E<2>
E-energy in the formula, unit: joule
The mean power of P-laser equipment is constant, and is relevant with lathe, unit: watt
F-Laser emission frequency, namely each second Emission Lasers number of times, unit: Hz
C: according to Laser emission frequency and formula＜3 in the laser equipment parameter of determining 〉, determine the feed rate in the device parameter;
f＝60aF<3>
F-feed rate in the formula, unit: mm/min
A-laser feeding step-length is constant, gets a ≈ 0.1mm
F-Laser emission frequency, unit: Hz
D: the ripple in the setting laser device parameter is wide to be 0.3-0.5ms;
E: adjust the Hgt% in the laser equipment parameter, the value that makes the mean power of laser equipment is 255W.
S3: start laser equipment, finish the punching process by laser equipment to the pre-punch position Emission Lasers bundle of sapphire sheet.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310032701.9A CN103111762B (en) | 2013-01-29 | 2013-01-29 | A kind of method laser boring being applied to sapphire sheet punching |
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| CN201310032701.9A CN103111762B (en) | 2013-01-29 | 2013-01-29 | A kind of method laser boring being applied to sapphire sheet punching |
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| CN103111762B CN103111762B (en) | 2015-12-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104499042A (en) * | 2014-12-15 | 2015-04-08 | 江苏苏博瑞光电设备科技有限公司 | Growth method of microporous sapphire crystal |
| CN106607647A (en) * | 2015-10-27 | 2017-05-03 | 深圳市著琢激光科技有限公司 | Technology for laser internal-engraving of natural crystal jewels |
Citations (7)
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| JPH10263873A (en) * | 1997-03-27 | 1998-10-06 | Sumitomo Heavy Ind Ltd | Laser beam machine and machining method |
| US20020063361A1 (en) * | 2000-09-20 | 2002-05-30 | Fahey Kevin P. | Laser processing of alumina or metals on or embedded therein |
| US20070026676A1 (en) * | 2005-08-01 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | Via hole machining for microwave monolithic integrated circuits |
| CN101027161A (en) * | 2004-09-29 | 2007-08-29 | 三菱麻铁里亚尔株式会社 | Laser processing method and laser processing apparatus |
| JP2009223440A (en) * | 2008-03-13 | 2009-10-01 | Disco Abrasive Syst Ltd | Workpiece machining method and device |
| JP4880820B2 (en) * | 2001-01-19 | 2012-02-22 | 株式会社レーザーシステム | Laser assisted machining method |
| JP5002808B2 (en) * | 2006-03-07 | 2012-08-15 | 国立大学法人北海道大学 | Laser processing apparatus and laser processing method |
-
2013
- 2013-01-29 CN CN201310032701.9A patent/CN103111762B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10263873A (en) * | 1997-03-27 | 1998-10-06 | Sumitomo Heavy Ind Ltd | Laser beam machine and machining method |
| US20020063361A1 (en) * | 2000-09-20 | 2002-05-30 | Fahey Kevin P. | Laser processing of alumina or metals on or embedded therein |
| JP4880820B2 (en) * | 2001-01-19 | 2012-02-22 | 株式会社レーザーシステム | Laser assisted machining method |
| CN101027161A (en) * | 2004-09-29 | 2007-08-29 | 三菱麻铁里亚尔株式会社 | Laser processing method and laser processing apparatus |
| US20070026676A1 (en) * | 2005-08-01 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | Via hole machining for microwave monolithic integrated circuits |
| JP5002808B2 (en) * | 2006-03-07 | 2012-08-15 | 国立大学法人北海道大学 | Laser processing apparatus and laser processing method |
| JP2009223440A (en) * | 2008-03-13 | 2009-10-01 | Disco Abrasive Syst Ltd | Workpiece machining method and device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104499042A (en) * | 2014-12-15 | 2015-04-08 | 江苏苏博瑞光电设备科技有限公司 | Growth method of microporous sapphire crystal |
| CN106607647A (en) * | 2015-10-27 | 2017-05-03 | 深圳市著琢激光科技有限公司 | Technology for laser internal-engraving of natural crystal jewels |
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| CN103111762B (en) | 2015-12-09 |
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Inventor after: Zhang Xiangfeng Inventor before: Zhang Xiangfeng |
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