CN103096614A - Wired circuit board - Google Patents
Wired circuit board Download PDFInfo
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- CN103096614A CN103096614A CN2012104194416A CN201210419441A CN103096614A CN 103096614 A CN103096614 A CN 103096614A CN 2012104194416 A CN2012104194416 A CN 2012104194416A CN 201210419441 A CN201210419441 A CN 201210419441A CN 103096614 A CN103096614 A CN 103096614A
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- peristome
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- insulating layer
- ground connection
- insulating barrier
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- Insulated Metal Substrates For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
A wired circuit board includes a metal supporting layer, a first insulating layer, a conductive layer, a second insulating layer, and a ground layer. The first opening of the first insulating layer is surrounded by the second opening of the second insulating layer when projected in the thickness direction, and the ground layer fills the first opening via the second opening so as to come in contact with an upper surface of the metal supporting layer. Alternatively, the first opening surrounds the second opening when projected in the thickness direction, the second insulating layer fills a peripheral end portion of the first opening, and the ground layer fills the second opening so as to come in contact with the upper surface of the metal supporting layer.
Description
Technical field
The present invention relates to a kind of wired circuit board, in detail, relate to the wired circuit boards such as a kind of hanging base board with circuit, flexible printed circuit board.
Background technology
In the past, the transmission loss for the holding wire that reduces conductive pattern for example, proposed a kind of wired circuit board, and it comprises: insulating barrier; Conductor layer, it is covered by this insulating barrier; Ground plane, the ground configuration of itself and conductor layer devices spaced apart is (for example, with reference to Fig. 8 and Figure 10 of TOHKEMY 2008-91634 communique.）。
In the wired circuit board of TOHKEMY 2008-91634 communique, insulating barrier comprises the 2nd insulating barrier and the 3rd insulating barrier that is formed on the 2nd insulating barrier, and ground plane comprises: the bottom ground plane, and it is formed under the 2nd insulating barrier; The sidepiece ground plane, it contacts with the bottom ground plane; Top ground plane, itself and sidepiece ground plane are continuously and be formed on the 3rd insulating barrier.
In the wired circuit board of TOHKEMY 2008-91634 communique, the 1st peristome and the 2nd peristome with identical shaped the 2nd insulating barrier and the 3rd insulating barrier of being formed at respectively, are filled with sidepiece ground plane at the 1st peristome and the 2nd peristome in the mode that is interconnected.
But to form through-thickness concordant due to the 1st peristome in TOHKEMY 2008-91634 communique and the 2nd peristome, thereby the contact area between sidepiece ground plane and the 1st peristome, between sidepiece ground plane and the 2nd peristome is less.Therefore, the adaptation between sidepiece ground plane and the 2nd insulating barrier, the 3rd insulating barrier is lower, thereby sometimes can not improve fully the reliability of ground plane.
Summary of the invention
The object of the present invention is to provide a kind of wired circuit board that can improve the adaptation of ground plane and the 1st insulating barrier or ground plane and the 2nd insulating barrier.
the invention provides a kind of wired circuit board, it is characterized in that, this wired circuit board comprises the metal support layer, be formed at the 1st insulating barrier on above-mentioned metal support layer, be formed at the conductor layer on above-mentioned the 1st insulating barrier, be formed at the 2nd insulating barrier on above-mentioned the 1st insulating barrier in the mode that covers above-mentioned conductor layer, be formed at the ground plane on above-mentioned the 2nd insulating barrier, be formed with the 1st peristome that through-thickness connects above-mentioned the 1st insulating barrier in above-mentioned the 1st insulating barrier, be formed with in above-mentioned the 2nd insulating barrier along above-mentioned thickness direction and connect above-mentioned the 2nd insulating barrier and 2nd peristome corresponding with above-mentioned the 1st peristome, when through-thickness carries out projection, above-mentioned the 1st peristome is in above-mentioned the 2nd peristome scope, above-mentioned ground plane is filled in above-mentioned the 1st peristome via above-mentioned the 2nd peristome in the mode that the upper surface with above-mentioned metal support layer contacts, perhaps, when through-thickness carries out projection, above-mentioned the 1st peristome comprises above-mentioned the 2nd peristome, above-mentioned the 2nd insulating barrier is filled to all ends of above-mentioned the 1st peristome, the mode that above-mentioned ground plane contacts with the upper surface with above-mentioned metal support layer is filled in above-mentioned the 2nd peristome.
In addition, in wired circuit board of the present invention, all sides of above-mentioned the 1st peristome of preferred above-mentioned the 1st insulating barrier form in the mode that tilts with respect to thickness direction, and/or all sides of above-mentioned the 2nd peristome of above-mentioned the 2nd insulating barrier form in the mode that tilts with respect to thickness direction.
In addition, in wired circuit board of the present invention, preferred above-mentioned the 1st insulating barrier and/or above-mentioned the 2nd insulating barrier are formed by photoresist.
In addition, in wired circuit board of the present invention, preferably pass through across photomask, above-mentioned photoresist to be exposed, thereby form above-mentioned the 1st insulating barrier and/or above-mentioned the 2nd insulating barrier.
In wired circuit board of the present invention.When through-thickness carried out projection, the 1st peristome was formed with the stage portion of the 1st insulating barrier in the 2nd peristome in the scope of the 2nd peristome.Therefore, when the mode that contacts with the upper surface with the metal support layer when ground plane is filled in the 1st peristome via the 2nd peristome, ground plane can contact with the stage portion of the 1st insulating barrier and fluid-tight engagement, thereby, can improve the adaptation of the 1st insulating barrier in ground plane and the 1st peristome and the 2nd peristome.
Perhaps, due to when through-thickness carries out projection, the 1st peristome comprises the 2nd peristome, and the 2nd insulating barrier is filled to all ends of the 1st peristome, thereby, be formed with the stage portion of the 2nd insulating barrier in the 1st peristome.Therefore, when mode that ground plane contacts with the upper surface with the metal support layer is filled in the 2nd peristome, ground plane can contact with the stage portion of the 2nd insulating barrier and fluid-tight engagement, thereby, can improve the adaptation of the 2nd insulating barrier in ground plane and the 1st peristome and the 2nd peristome.
Its result by improving the adaptation of ground plane and the 1st insulating barrier or the 2nd insulating barrier, can improve the reliability of grounding connection.
Description of drawings
Fig. 1 is the stereogram with the hanging base board of circuit as an execution mode of wired circuit board of the present invention.
Fig. 2 is the amplification plan view of the rearward end of hanging base board with circuit shown in Figure 1.
Fig. 3 dissects along the single-point line of the A-A bending of Fig. 2 the amplification view that forms.
Fig. 4 is the B-B amplification view of Fig. 2.
Fig. 5 is the C-C amplification view of Fig. 2.
Fig. 6 is the D-D amplification view of Fig. 2.
Fig. 7 is the process chart be used to the manufacture method that suspension base with circuit shown in Figure 3 is described, wherein,
The operation of metal supporting course is prepared in (a) expression of Fig. 7,
(b) expression of Fig. 7 forms the operation of the 1st substrate overlay film,
(c) expression of Fig. 7 forms the operation of the 1st base insulating layer,
(d) expression of Fig. 7 forms the operation of conductor layer.
Fig. 8 goes on to say the process chart of the manufacture method of hanging base board with circuit shown in Figure 3 for then Fig. 7, wherein,
(e) expression of Fig. 8 forms the operation of the 2nd substrate overlay film,
(f) expression of Fig. 8 forms the operation of the 2nd base insulating layer,
(g) expression of Fig. 8 forms the operation of ground plane,
(h) expression of Fig. 8 forms the operation that covers insulating barrier.
Fig. 9 is the amplification view with the support side earth terminal (form that the support side earth terminal is exposed) of the hanging base board of circuit as another execution mode of wired circuit board of the present invention.
Figure 10 is the amplification view with the support side earth terminal (the 1st ground connection peristome comprises the form of the 2nd ground connection peristome) of the hanging base board of circuit as the another execution mode of wired circuit board of the present invention.
Figure 11 is the amplification view with the support side earth terminal (the 2nd ground connection peristome and the 1st ground connection peristome form the form of same diameter) of the hanging base board of circuit of comparative example 1.
Figure 12 is the support side earth terminal with the hanging base board of circuit (the 2nd ground connection peristome and the 1st ground connection peristome form the form of same diameter and the 2nd ground connection peristome and the dislocation of the 1st ground connection peristome) of comparative example 1, wherein,
Figure 12 (a) is cutaway view,
Figure 12 (b) is amplification plan view.
Embodiment
Fig. 1 represents the stereogram with the hanging base board of circuit as an execution mode of wired circuit board of the present invention, Fig. 2 represents the amplification plan view of the rearward end of hanging base board with circuit shown in Figure 1, Fig. 3 represents to dissect along the single-point line of the A-A bending of Fig. 2 the amplification view that forms, the B-B amplification view of Fig. 4 presentation graphs 2, the C-C amplification view of Fig. 5 presentation graphs 2, the D-D amplification view of Fig. 6 presentation graphs 2.Fig. 7 is the process chart be used to the manufacture method that hanging base board with circuit shown in Figure 3 is described, wherein, the operation of metal supporting course is prepared in (a) expression of Fig. 7, (b) expression of Fig. 7 forms the operation of the 1st substrate overlay film, (c) expression of Fig. 7 forms the operation of the 1st base insulating layer, and (d) expression of Fig. 7 forms the operation of conductor layer.Fig. 8 goes on to say the process chart of the manufacture method of hanging base board with circuit shown in Figure 3 for then Fig. 7, wherein, (e) expression of Fig. 8 forms the operation of the 2nd substrate overlay film, (f) expression of Fig. 8 forms the operation of the 2nd base insulating layer, (g) expression of Fig. 8 forms the operation of ground plane, and (h) expression of Fig. 8 forms the operation that covers insulating barrier.
In addition, in Fig. 2, in order clearly to represent the relative configuration relation of conductor layer 4 described later and ground plane 6, omitted covering insulating barrier 7.
In Fig. 1, hanging base board 1 with circuit is equipped with magnetic head (not shown), and, this hanging base board 1 with circuit is connected and carries in hard disk drive (not shown) with read-write substrate (not shown), and this read-write substrate is used for sending write signal and receiving read output signal from magnetic head to magnetic head.This hanging base board 1 with circuit is formed by metal support layer 2, conductor layer 4 and ground plane 6, and this metal support layer 2 (fore-and-aft direction) along its length extends, and this conductor layer 4 and ground plane 6 are by 2 supporting of metal support layer.
The wiring on right side to the wiring in (a side wiring to) 30A and left side to (opposite side wiring to) 30B in, conductor layer 4 comprises: head side signal terminal 13, it is used for being connected with the terminal of magnetic head; Outer side signal terminal 9, it is used for being connected with the terminal (not shown) of read-write substrate; Holding wire 8, it is used for being connected with outer side signal terminal 9 with head side signal terminal 13, and head side signal terminal 13, outer side signal terminal 9 and holding wire 8 form as one.
In addition, the wiring on right side to the wiring in 30A and left side to 30B in, ground plane 6 comprises: head side earth terminal 52, it is used for being connected with the terminal of magnetic head; Support side earth terminal 59, it is used for being connected with metal support layer 2; Ground connection wiring 58, it is used for head side earth terminal 52 and support side earth terminal 59 are coupled together, and head side earth terminal 52, support side earth terminal 59 and ground connection wiring 58 form as one.
In addition, as shown in Figure 4, comprise with the hanging base board 1 of circuit: metal support layer 2; The 1st base insulating layer 3, it is formed on metal support layer 2 as insulating barrier; Conductor layer 4, it is formed on the 1st base insulating layer 3; The 2nd base insulating layer 5, it is formed on the 1st base insulating layer 3 in the mode that covers conductor layer 4 as the 2nd insulating barrier; Ground plane 6, it is formed on the 2nd base insulating layer 5.In addition, have with the hanging base board 1 of circuit the insulating barrier 7 of covering, this coverings insulating barrier 7 is formed on the 2nd base insulating layer 5 in the mode of covering ground plane 6.
Next, describe rearward end with the hanging base board 1 of circuit in detail with reference to Fig. 2～Fig. 6.In addition, in explanation afterwards, only the wiring on illustration right side describes 30A the wiring in 30A and the left side wiring to the right side among 30B, and the wiring in left side is identical to the explanation of 30A with the wiring on right side to the explanation of 30B, omits the wiring in left side to the explanation of 30B.
In Fig. 2, be provided with integratedly wiring forming portion 10, terminal forming portion 12 and be formed at continuously with them the pars intermedia 11 that connects up between forming portion 10 and terminal forming portion 12 in the rearward end with the hanging base board 1 of circuit.
As shown in Figure 4, in wiring forming portion 10, be formed with the 1st base insulating layer 3 on metal support layer 2.The 1st base insulating layer 3 is layered on the upper surface of metal support layer 2 in the mode corresponding with holding wire 8.
Be formed with holding wire 8 on the 1st base insulating layer 3.As shown in Figure 1, holding wire 8 forms towards the leading section with the hanging base board 1 of circuit and extends with linearity.
As shown in Figure 4, be laminated with the 2nd base insulating layer 5 in the mode that covers holding wire 8 on the 1st base insulating layer 3.
Ground connection wiring 58 with when through-thickness (above-below direction) carries out projection and the equitant mode of holding wire 8 be formed on the 2nd base insulating layer 5.
Be laminated with insulating barrier 7 in the mode that covers ground connection wiring 58 on the 2nd base insulating layer 5.
Wiring forming portion 10 form wiring with the right side to 30A, namely, the zone corresponding with holding wire 8 and ground connection wiring 58 overlapping part on thickness direction.
As shown in Figure 2, pars intermedia 11 forms the zone line that links up for the terminal forming portion 12 that will connect up forming portion 10 and next will illustrate.
As shown in Figure 5, in pars intermedia 11, be formed with the 1st base insulating layer 3 on metal support layer 2.The 1st base insulating layer 3 is layered on the upper surface of metal support layer 2.The 1st base insulating layer 3 of pars intermedia 11 forms the 1st base insulating layer 3(with the forming portion 10 that connects up with reference to Fig. 4) continuously.
Be formed with holding wire 8 on the 1st base insulating layer 3.As shown in Figure 1, in pars intermedia 11, holding wire 8 forms midway the roughly L word shape of overlooking of bending to the left.
As shown in Figure 5, be laminated with the 2nd base insulating layer 5 that covers holding wire 8 on the 1st base insulating layer 3.The 2nd base insulating layer 5 arranges in the mode corresponding with holding wire 8 and ground connection wiring 58, more particularly, the 2nd base insulating layer 5 with overlook L word shape (with reference to Fig. 2) roughly be formed at the upper surface of holding wire 8 and side, holding wire 8 around the upper surface of the 1st base insulating layer 3 on.
In pars intermedia 11, be formed with ground connection wiring 58 on the 2nd base insulating layer 5.
As shown in Figure 2, in pars intermedia 11, ground connection wiring 58 forms midway the roughly L word shape of overlooking of bending to the left.
That is, as shown in Figure 4, in the ground connection of pars intermedia 11 wiring 58, with the linearly continuous partial configurations before crooked of the ground connection wiring 58 of wiring forming portion 10 for when overlooking when projection (along the vertical direction) overlapping with the holding wire 8 of pars intermedia 11.
On the other hand, as shown in Figure 5, in the ground connection of pars intermedia 11 wiring 58, be the rear side of the holding wire 8 that is positioned at pars intermedia 11 when overlooking with partial configuration after the linearly continuous bending of the ground connection wiring 58 of terminal forming portion 12.
Namely, as shown in Figure 2, in pars intermedia 11, due to holding wire 8 than the position of ground connection wiring 58 forward sides to the Width outside curve, therefore, ground connection wiring 58 is configured to, and all overlapping with the crooked front part of holding wire 8 till the part before bending partways, afterwards crooked front part and the part after bending are not overlapping with holding wire 8.That is, as shown in Figure 5, when through-thickness carries out projection, the part after the part after the bending of ground connection wiring 58 and the bending of holding wire 8 side by side and devices spaced apart be configured in the rear side of the part after the bending of holding wire 8.
In addition, ground connection wiring 58 is formed on the insulating barrier that the insulating barrier (with reference to Fig. 4) that is formed with ground connection wiring 58 with the forming portion 10 that connects up is same insulating barrier, namely is formed on the 2nd base insulating layer 5.In addition, ground connection wiring 58 forms with the support side earth terminal 59 of next explanation mutually continuous.
Be formed with the covering insulating barrier 7 that covers ground connection wiring 58 on the 2nd base insulating layer 5.
As shown in Figure 2, be formed with outer side signal terminal 9 and support side earth terminal 59 on terminal forming portion 12, the zone that will be formed with outer side signal terminal 9 is made as signal terminal and forms zone 74, and the zone that will be formed with support side earth terminal 59 is made as earth terminal and forms zone 75.
As shown in Figure 6, form in zone 74 at signal terminal, be formed with the supporting peristome 73 corresponding with outer side signal terminal 9 in metal support layer 2.
Supporting peristome 73 connects metal support layer 2 along the thickness direction of metal support layer 2, and as shown in Figure 2, supporting peristome 73 forms the long essentially rectangular shape of overlooking on left and right directions.
In addition, as shown in Figure 6, form in zone 74 at signal terminal, be formed with the 1st base insulating layer 3 on the metal support layer 2 around supporting peristome 73.
Be formed with the 1st substrate peristome 76 that is connected with supporting peristome 73 in the 1st base insulating layer 3.The 1st substrate peristome 76 connects the 1st base insulating layer 3 along the thickness direction of the 1st base insulating layer 3, and it forms when overlooking identical with the shape that supports peristome 73.
As shown in Figure 6, be formed with outer side signal terminal 9 on the 1st base insulating layer 3 of the fore-and-aft direction both sides of the 1st substrate peristome 76, as shown in Figure 2, outer side signal terminal 9 forms along fore-and-aft direction across the 1st substrate peristome 76.Outer side signal terminal 9 forms the square lug plate that width is wider than the width of holding wire 8.
As shown in Figure 6, the lower surface of outer side signal terminal 9 exposes from supporting peristome 73 and the 1st substrate peristome 76.
On the 1st base insulating layer 3 around the 1st substrate peristome 76, be formed with the 2nd base insulating layer 5 in the mode at the fore-and-aft direction two ends that cover outer side signal terminal 9.
Be formed with the 2nd substrate peristome 83 that is connected with the 1st substrate peristome 76 in the 2nd base insulating layer 5.
The 2nd substrate peristome 83 connects the 2nd base insulating layer 5 along the thickness direction of the 2nd base insulating layer 5, and as shown in Figure 2, it is identical that the 2nd substrate peristome 83 forms when overlooking the shape with the 1st substrate peristome 76.
In addition, be formed with covering insulating barrier 7 on the 2nd base insulating layer 5.
Be formed with in covering insulating barrier 7 and cover peristome 77.Cover peristome 77 and connect along the thickness direction that covers insulating barriers 7 and cover insulating barrier 7, as shown in Figure 2, covering peristome 77, to form when overlooking the shape with the 2nd substrate peristome 83 identical.
As shown in Figure 6, form in zone 74 at signal terminal, outer side signal terminal 9 forms its lower surface and exposes from supporting peristome 73 and the 1st substrate peristome 76, and its upper surface exposes from the 2nd substrate peristome 83 and covering peristome 77.
As shown in Figure 2, earth terminal forms that zone 75 forms zone 74 side by side with signal terminal and devices spaced apart ground is configured in signal terminal and forms regional 74 rear side.
Form in zone 75 at earth terminal, as Fig. 3 and shown in Figure 6, be formed with the 1st base insulating layer 3 on metal support layer 2.
The 1st peristome that is formed with through-thickness perforation the 1st base insulating layer 3 in the 1st base insulating layer 3 is that the 1st ground connection peristome 78(is with reference to Fig. 7 (c)).
As shown in the dotted line of Fig. 2, the 1st ground connection peristome 78 forms overlooks the circular shape.In addition, as Fig. 3 and shown in Figure 6, the part of facing mutually with the 1st ground connection peristome 78 of the 1st base insulating layer 3 (particularly, the 1st ground connection peristome 78 around) forms the 1st stage portion 15.
In addition, the 1st of the 1st ground connection peristome 78 of the 1st base insulating layer 3 all sides 79 form the inclined plane with respect to the thickness direction inclination.Particularly, the 1st all sides 79 tilt with (namely, undergauge) taper that the horizontal section area of the 1st ground connection peristome 78 diminishes gradually along with going downwards.
Be formed with the 2nd base insulating layer 5 on the 1st base insulating layer 3.
Being formed with along thickness direction perforation the 2nd base insulating layer 5 and 2nd peristome corresponding with the 1st ground connection peristome 78 of the 2nd base insulating layer 5 in the 2nd base insulating layer 5 is the 2nd ground connection peristome 80.
As shown in the dotted line of Fig. 2, when through-thickness carried out projection, the 2nd ground connection peristome 80 formed and comprises the 1st ground connection peristome 78.Particularly, the 2nd ground connection peristome 80 forms with the 1st ground connection peristome 78 has a common center and overlooks the circular shape.That is, the 2nd ground connection peristome 80 forms when overlooking and to 1st ground connection peristome 78 similar shape larger than the 1st ground connection peristome 78.
In addition, as Fig. 3 and shown in Figure 6, the part of facing mutually with the 2nd ground connection peristome 80 of the 2nd base insulating layer 5 (particularly, the 2nd ground connection peristome 80 around) forms the 2nd stage portion 16.
Therefore, the 2nd stage portion 16 of the 1st stage portion 15 of the 1st base insulating layer 3 and the 2nd base insulating layer 5 forms the two-stage stage portion that is step-like decline along with going towards radially inner side.
In addition, the 2nd of the 2nd ground connection peristome 80 of the 2nd base insulating layer 5 all sides 81 form the inclined plane with respect to the thickness direction inclination.Particularly, the 2nd all sides 81 form so that diminish the gradually taper of (namely, undergauge) of the horizontal section area of the 2nd ground connection peristome 80 tilts along with going towards the below.
Be formed with support side earth terminal 59 on the 2nd base insulating layer 5 around the 2nd ground connection peristome 80.
When through-thickness carried out projection, the profile of support side earth terminal 59 formed the circular shape that comprises the 1st ground connection peristome 78 and the 2nd ground connection peristome 80.
And the inside of support side earth terminal 59 is filled in the 1st ground connection peristome 78 via the 2nd ground connection peristome 80.
Particularly, support side earth terminal 59 forms: sink towards the 2nd all sides 81 along the 2nd ground connection peristome 80 of the 2nd base insulating layer 5 medially from the 2nd stage portion 16 of the 2nd base insulating layer 5, then, in the 2nd ground connection peristome 80, extend along the upper surface of the 1st stage portion 15 of the inboard that is formed at the 2nd ground connection peristome 80 of the 1st base insulating layer 3.Then, support side earth terminal 59 sink along the 1st all sides 79 of the 1st ground connection peristome 78 of the 1st base insulating layer 3, afterwards, be formed at the metal support layer 2 that the metal support layer 2(of the inboard of the 1st stage portion 15 exposes from the 1st ground connection peristome 78) upper surface.
Thus, the upper surface of the metal support layer 2 in support side earth terminal 59 and the 1st ground connection peristome 78 contacts.That is, support side earth terminal 59 is electrically connected to metal support layer 2.Thus, ground plane 6 ground connection (grounding connection).
In addition, be formed with covering insulating barrier 7 in the mode that covers support side earth terminal 59 on the 2nd base insulating layer 5.
In addition, as shown in Figure 1, at the leading section with the hanging base board 1 of circuit, the wiring on right side to the wiring in 30A and left side to 30B be configured in side by side suspension 26 near.That is, the wiring on right side configures and is set as identical with the structure of above-mentioned terminal forming portion 12 and pars intermedia 11 to the wiring in the head side signal terminal 13 of 30A and head side earth terminal 52 and left side on Width to head side signal terminal 13 and the head side earth terminal 52 of 30B side by side.
In addition, the structure that is made as with the pars intermedia of the hanging base board 1 of circuit (part between leading section and rearward end, the middle part of fore-and-aft direction) with the wiring forming portion 10 of rearward end is identical.
Next, illustrate that with reference to Fig. 7 and Fig. 8 this is with the manufacture method of the hanging base board 1 of circuit.
At first, in the method, as shown in Fig. 7 (a), prepare metal supporting course 2.As the metal material that is used to form metal support layer 2, for example, can use stainless steel, 42 alloys etc., preferably use stainless steel (for example, based on the AISI(American Iron and Steel Institute) standard, SUS304 etc.) etc.The thickness of metal support layer 2 is for example 10 μ m～30 μ m, is preferably 15 μ m～25 μ m.
Then, in the method, as shown in Fig. 7 (b) and Fig. 7 (c), make the 1st base insulating layer 3 to have the 1st ground connection peristome 78 and the 1st 79(inclined plane, all sides) mode be formed on metal support layer 2.
As the insulating material that is used to form the 1st base insulating layer 3, for example, can use polyimide resin, polyethers nitrile (polyether nitrile) resin, polyethersulfone resin, pet resin, PEN (polyethylene naphthalate) resin, the resins such as Corvic.Among above-mentioned resin, preferably use photoresist, more preferably use the photosensitive polyimide resin.
In order to form the 1st base insulating layer 3, for example, as shown in Fig. 7 (b), at first, apply the solution (varnish) of photoresist and make its drying on the whole upper surface of metal support layer 2, thereby forming the 1st substrate overlay film 20.
Afterwards, across 14 pairs of the 1st substrate overlay film 20 exposures of the 1st greyscale photo mask (Japanese: Bands Tone Off ォ ト マ ス Network) as photomask.
The 1st greyscale photo mask 14 has by the 1st shading light part 17, the 1st smooth semi-permeation parts 18 and the 1st smooth full impregnated crosses the mask pattern that part 19 consists of.The 1st smooth semi-permeation parts 18 is set as light transmission rate becomes gradually large along with crossing part 19 from the 1st shading light part 17 near the 1st smooth full impregnated.
And, the 1st greyscale photo mask 14 is configured in the upside of the 1st substrate overlay film 20.
Particularly, make the 1st smooth full impregnated cross part 19 and be used to form (c) of the 1st base insulating layer 3(with reference to Fig. 7) part face mutually, make the 1st smooth semi-permeation parts 18 and be used to form (c) of the 1st all side 79(with reference to Fig. 7) part face mutually, the 1st shading light part 17 and the part (comprising the 1st ground connection peristome 78, with reference to (c) of Fig. 7) that does not form the 1st base insulating layer 3 are faced mutually.
Afterwards, expose from the top across 14 pairs of the 1st substrate overlay films 20 of the 1st greyscale photo mask.
Afterwards, the part of utilizing developer solution to make to face mutually with the 1st shading light part 17, be the unexposed portion dissolving, and make the part faced mutually with the 1st smooth semi-permeation parts 18, be that controlled half exposed portion of exposure is partly dissolved and develops, afterwards, make as required its curing.
Thus, as shown in Fig. 7 (d), form the 1st base insulating layer 3 with the pattern with the 1st ground connection peristome 78 and the 1st all sides 79.
The thickness of the 1st base insulating layer 3 that so forms is for example 1 μ m～25 μ m, is preferably 1 μ m～10 μ m.
In addition, the inner diameter D 1 of the 1st ground connection peristome 78 is for example 10 μ m～100 μ m, is preferably 15 μ m～60 μ m.
The 1st all sides 79 are for example 0.35 degree～85 degree with upper surface angulation (angle of inclination) α of metal support layer 2, are preferably 0.5 degree～45 degree.
Then, in the method, as shown in Fig. 7 (d), conductor layer 4 is formed on the 1st base insulating layer 3 with above-mentioned pattern.
As the material that forms conductor layer 4, for example, can use the metal materials such as alloy of copper, nickel, gold, scolding tin or above-mentioned material.Among above-mentioned material, preferably use copper.
In order to form conductor layer 4, for example, can use the known method for forming patterns such as addition process, subtractive process (subtractive method).The preferred addition process of using.
When carrying out addition process, at first, form the 1st not shown metallic film (planting film (Japanese: Seed film)) on the whole upper surface of metal support layer 2 and the 1st base insulating layer 3.As the 1st metallic film, can use the metal materials such as alloy of copper, chromium, nickel and copper, chromium, nickel.Can utilize the film forming methods such as sputtering method, plating method to form the 1st metallic film.Preferably utilize sputtering method to form the 1st metallic film.
Then, on the surface of the 1st metallic film, dry film photoresist is set, by it being exposed and developing to form the not shown anti-coating that has with conductor layer 4 opposite pattern.Then, utilize electrolysis to plate to form conductor layer 4 on the surface from anti-coating comes out of the 1st metallic film, then, utilize the part that is formed with anti-coating of the anti-coating of removal such as etching and the 1st metallic film.
The thickness of the conductor layer 4 that so forms is for example 3 μ m～50 μ m, is preferably 5 μ m～15 μ m.
In addition, each holding wire 8(is with reference to Fig. 2) width be for example 10 μ m～300 μ m, be preferably 15 μ m～150 μ m.In addition, each head side signal terminal 13 and each outer side signal terminal 9(are with reference to Fig. 2) width be for example 10 μ m～15000 μ m, be preferably 30 μ m～1000 μ m.
Thus, as shown in Figure 1, conductor layer 4 forms such wired circuit pattern, and this wired circuit pattern is formed by holding wire 8, outer side signal terminal 9 and head side signal terminal 13.
Then, in the method, as shown in Fig. 8 (e) and Fig. 8 (f), with the above-mentioned pattern with the 2nd ground connection peristome 80 and the 2nd all sides 81, the 2nd base insulating layer 5 is formed on the 1st base insulating layer 3.
As the insulating material that is used to form the 2nd base insulating layer 5, use the insulating material identical with above-mentioned the 1st base insulating layer 3.
In order to form the 2nd base insulating layer 5, for example, shown in Fig. 8 (e), apply the solution (varnish) of photoresist and make its drying on the whole upper surface of metal support layer 2, the 1st base insulating layer 3 and conductor layer 4, thereby forming the 2nd substrate overlay film 21.
Afterwards, across 22 pairs of the 2nd substrate overlay film 21 exposures of the 2nd greyscale photo mask as photomask.
The 2nd greyscale photo mask 22 has by the 2nd shading light part 23, the 2nd smooth semi-permeation parts 24 and the 2nd smooth full impregnated crosses the mask pattern that part 25 consists of.The 2nd smooth semi-permeation parts 24 is set as light transmission rate becomes large gradually along with crossing part 25 from the 2nd shading light part 23 near the 2nd smooth full impregnated.
And, the 2nd greyscale photo mask 22 is configured in the upside of the 2nd substrate overlay film 21.
Particularly, make the 2nd smooth full impregnated cross part 25 and be used to form (f) of the 2nd base insulating layer 5(with reference to Fig. 8) part face mutually, make the 2nd smooth semi-permeation parts 24 and be used to form (f) of the 2nd all side 79(with reference to Fig. 8) part face mutually, make the 2nd shading light part 23 and the part that does not form the 2nd base insulating layer 5 (comprising that the 2nd ground connection peristome 80(is with reference to Fig. 8 (f)) and the 2nd substrate peristome 83(with reference to Fig. 2)) face mutually.
Afterwards, expose from the top across 22 pairs of the 2nd substrate overlay films 21 of the 2nd greyscale photo mask.
Afterwards, the part of utilizing developer solution to make to face mutually with the 2nd shading light part 23, be the unexposed portion dissolving, and make the part faced mutually with the 2nd smooth semi-permeation parts 24, be that controlled half exposed portion of exposure is partly dissolved, develops, afterwards, make as required its curing.
Thus, as shown in Fig. 8 (f), form the 2nd base insulating layer 5 with the pattern with the 2nd ground connection peristome 80, the 2nd all sides 81 and the 2nd substrate peristome 83.
The thickness of the 2nd base insulating layer 5 that so forms is for example 1 μ m～50 μ m, is preferably 1.5 μ m～15 μ m.
In addition, compare with the inner diameter D 1 of the 1st ground connection peristome 78, the inner diameter D 2 of the 2nd ground connection peristome 80 is preferably 110%～900% of inner diameter D 1 for example greater than inner diameter D 1, and particularly, inner diameter D 2 is for example 20 μ m～200 μ m, is preferably 35 μ m～100 μ m.
In addition, upper surface angulation (angle of inclination) β of the 2nd all sides 81 and the 1st base insulating layer 3 is for example 0.35 degree～85 degree, is preferably 0.5 degree～45 degree.
Then, in the method, as shown in Fig. 8 (g), form ground plane 6 with above-mentioned pattern.
Material as forming ground plane 6 uses the material identical with above-mentioned conductor layer 4.
In order to form ground plane 6, use method for forming pattern same as described above, preferably use addition process.
When carrying out addition process, at first, form not shown the 2nd metallic film (kind film) on the whole upper surface of metal support layer 2, the 1st base insulating layer 3 and the 2nd base insulating layer 5.As the 2nd metallic film, use metal material same as described above.Form the 2nd metallic film with film forming method same as described above, preferably use sputtering method.
Then, on the surface of the 2nd metallic film, dry film photoresist is set, by it being exposed and developing to form the not shown anti-coating that has with ground plane 6 opposite pattern.Then, utilize electrolysis to plate to form ground plane 6 on the surface from anti-coating comes out of the 2nd metallic film, then, utilize the part that is formed with anti-coating of the anti-coating of removal such as etching and the 2nd metallic film.
The thickness of the ground plane 6 that so forms is for example 3 μ m～50 μ m, is preferably 5 μ m～15 μ m.In addition, the width of each ground connection wiring 58 can be identical with the width of holding wire 8, also can be different, and the width of each ground connection wiring 58 is for example 10 μ m～300 μ m, is preferably 15 μ m～150 μ m.
The external diameter of each support side earth terminal 59 is for example 100 μ m～1000 μ m, is preferably 150 μ m～500 μ m.
Each head side earth terminal 52(is with reference to Fig. 1) width be for example 10 μ m～15000 μ m, be preferably 30 μ m～1000 μ m.
Then, in the method, as shown in Fig. 8 (h), cover peristome 77(with reference to Fig. 2 to have) above-mentioned pattern form and cover insulating barrier 7.
As forming the insulating material that covers insulating barrier 7, use the insulating material identical with above-mentioned the 1st base insulating layer 3.
To cover insulating barrier 7 in order forming, for example, to apply the solution (varnish) of photoresist and make its drying on the whole upper surface of metal support layer 2, the 2nd base insulating layer 5 and ground plane 6, cover overlay film (not shown) thereby form.Afterwards, expose and develop covering overlay film across photomask.
Afterwards, make as required to cover overlay film curing, have thereby covering insulating barrier 7 is formed the above-mentioned pattern that covers peristome 77.
In addition, the formation that covers insulating barrier 7 is not limited to said method, for example, also can resin-shaped be become and be formed with the film that covers peristome 77, by known bond layer, this film is bonded on the whole upper surface of metal support layer 2, the 2nd base insulating layer 5 and ground plane 6.
The thickness of the covering insulating barrier 7 that so forms is for example 2 μ m～10 μ m, is preferably 3 μ m～6 μ m.
Then, in the method, as shown in Figure 6, make metal support layer 2 opening and form supporting peristome 73, then, make the 1st base insulating layer 3 openings and form the 1st substrate peristome 76.
In order to make metal support layer 2 opening, for example, can use the wet etchings such as chemical etching.
In order to make the 1st base insulating layer 3 openings, for example, can use the methods such as dry ecthing such as plasma etching of metal support layer 2 as mask.
Thus, can make outer side signal terminal 9 form fly line (flying lead).
In addition, the length (length of length direction) of supporting peristome 73 and the 1st substrate peristome 76 is for example 50 μ m～1500 μ m.
Afterwards, as required, externally form the not shown coat of metal on the surface of side signal terminal 9.The coat of metal is made of metal materials such as gold, such as forming the coat of metal by platings such as electrolysis plating, electroless platings.The thickness of the coat of metal is for example 0.2 μ m～5 μ m.In addition, be formed with too the coat of metal on the surface of head side signal terminal 13 and head side earth terminal 52.
Afterwards, form suspension shown in Figure 1 26 by metal support layer 2 is carried out sharp processing, can access the hanging base board 1 on charged road.
And in this hanging base board 1 with circuit, as shown in Figure 3, when through-thickness carried out projection, the 1st ground connection peristome 78 was formed with the 1st stage portion 15 of the 1st base insulating layer 3 in the 2nd ground connection peristome 80 in the scope of the 2nd ground connection peristome 80.
Therefore, when support side earth terminal 59 to be filled to the 1st ground connection peristome 78 when interior with the contacted mode of the upper surface of metal support layer 2 via the 2nd ground connection peristome 80, support side earth terminal 59 can contact and fluid-tight engagement with the 1st stage portion 15 of the 1st base insulating layer 3, thereby, can improve the adaptation of the 1st base insulating layer 3 in support side earth terminal 59 and the 1st ground connection peristome 78 and the 2nd ground connection peristome 80.
Its result by improving the adaptation of support side earth terminal 59 and the 1st base insulating layer 3, can improve the reliability of grounding connection (ground connection).
And, the 1st all sides 79 of the 1st ground connection peristome 78 of the 1st base insulating layer 3 form the inclined plane with respect to the thickness direction inclination, and the 2nd all sides 81 of the 2nd ground connection peristome 80 of the 2nd base insulating layer 5 form the inclined plane with respect to the thickness direction inclination.
Therefore, the situation (with reference to Figure 11) that forms the vertical plane of through-thickness extension with the 1st all sides 79 and the 2nd all sides 81 is compared, and the contact area between support side earth terminal 59 and the 1st all sides 79, support side earth terminal 59 and the 2nd all sides 81 is increased.
Its result can further improve the adaptation between support side earth terminal 59 and the 1st all sides 79, the 2nd all sides 81.
And, in the execution mode of Fig. 3, therefore two-stage stage portion fluid-tight engagement because support side earth terminal 59 can consist of with the 2nd stage portion 16 by the 1st stage portion 15 of the 1st base insulating layer 3 and the 2nd base insulating layer 5 can further improve the adaptation between support side earth terminal 59 and the 1st base insulating layer 3, support side earth terminal 59 and the 2nd base insulating layer 5.
In addition, in the execution mode of Fig. 7 and Fig. 8, the 1st base insulating layer 3 forms by exposing across 14 pairs of the 1st substrate overlay films 20 of the 1st greyscale photo mask, and the 2nd base insulating layer 5 is by forming across 22 pairs of the 2nd substrate overlay films 21 exposures of the 2nd greyscale photo mask.
And, make as shown in Figure 11 the 1st ground connection peristome 78 with the 2nd ground connection peristome 80 when concordant, namely, when forming the 1st ground connection peristome 78 and the 2nd ground connection peristome 80 with same diameter, the 1st shading light part 17(is with reference to Fig. 7 (b)) size and the 2nd shading light part 23(with reference to (e) of Fig. 8) size need to be same size.In this case, if the position of the 2nd shading light part 23 is offset (dislocation) slightly with respect to the position of the 1st shading light part 17, as shown in figure 12, the 1st ground connection peristome 78 that forms afterwards can be in the scope of the 2nd ground connection peristome 80 when through-thickness carries out projection, and the 1st stage portion 15 and the 2nd stage portion 16 can be intersected.That is, the 2nd stage portion 16 can enter in the 1st ground connection peristome 78, and this entering part 92 can contact with the upper surface of metal support layer 2 in the 1st ground connection peristome 78.Therefore, above-mentioned dislocation can make the contact area that support side earth terminal 59 contacts with the upper surface of metal support layer 2 reduce.Its result can not improve the reliability of grounding connection sometimes fully.
Yet, in the execution mode of Fig. 3, the inner diameter D 1 of the 1st shading light part 17 is set as inner diameter D 2 less than the 2nd shading light part 23, so that when through-thickness carried out projection, the 1st ground connection peristome 78 was in the scope of the 2nd ground connection peristome 80.
Therefore, even the 2nd shading light part 23(is with reference to Fig. 8 (b)) the position with respect to (b) of the 1st shading light part 17(with reference to Fig. 7) the position skew has occured slightly (for example, dislocation about 10 μ m), the 1st ground connection peristome 78 that forms afterwards also can be in the scope of the 2nd ground connection peristome 80 when through-thickness carries out projection.Therefore, the contact area that contacts of the upper surface of the metal support layer 2 in support side earth terminal 59 and the 1st ground connection peristome 78 can not reduce because of above-mentioned dislocation.Its result can improve the reliability of grounding connection fully.
Fig. 9 is the amplification view with the support side earth terminal (form that the support side earth terminal is exposed) of the hanging base board of circuit as another execution mode of wired circuit board of the present invention, and Figure 10 is the amplification view with the support side earth terminal (the 1st ground connection peristome comprises the form of the 2nd ground connection peristome) of the hanging base board of circuit as the another execution mode of wired circuit board of the present invention.
In addition, for the member corresponding with above-mentioned each one, in each accompanying drawing afterwards, mark identical Reference numeral and omit its detailed explanation.
In the execution mode of Fig. 3, form zone 75 at earth terminal and be provided with and cover insulating barrier 7, still, be not limited to this, for example, as shown in Figure 9, also can not arrange and cover insulating barrier 7 and support side earth terminal 59 is exposed.
The execution mode of Fig. 9 can play the action effect same with the execution mode of Fig. 1.
In addition, in the execution mode of Fig. 3, the 1st ground connection peristome 78 is formed, and when through-thickness carried out projection, the 1st ground connection peristome 78 was in the scope of the 2nd ground connection peristome 80, but, for example, as shown in figure 10, also can be contrary to the above, that is, form the 1st base insulating layer 3 and the 2nd base insulating layer 5 in the mode of the 2nd ground connection peristome 80 in the scope of the 1st ground connection peristome 78 when through-thickness carries out projection.
In Figure 10, the 2nd base insulating layer 5 is formed at the upper surface of the 1st base insulating layer 3, and the 2nd base insulating layer 5 forms: the 1st stage portion 15 from the 1st base insulating layer 3 is sunk along the 1st all sides 79 of the 1st base insulating layer 3, afterwards, be projected in the 1st ground connection peristome 78 of the 1st base insulating layer 3.Particularly, the ledge 93 of the 2nd base insulating layer 5 is filled to all ends of the 1st ground connection peristome 78.The ledge 93 of the 2nd base insulating layer 5 is formed on the upper surface of metal support layer 2 and forms the 2nd stage portion 16.
The 2nd stage portion 16 contacts with the upper surface of metal support layer 2.Thus, ground plane 6 ground connection (grounding connection).
Next, the manufacture method of hanging base board 1 with circuit shown in Figure 10 is described.
At first, in the method, as shown in Fig. 7 (a), prepare metal supporting course 2.
Then, in the method, as shown in Fig. 7 (b) and Fig. 7 (c), the 1st base insulating layer 3 is formed on metal support layer 2 in the mode with the 1st ground connection peristome 78 and the 1st all sides 79.
The inner diameter D 1 of the 1st ground connection peristome 78 is for example 20 μ m～200 μ m, is preferably 35 μ m～100 μ m.
Then, in the method, as shown in Fig. 7 (d), conductor layer 4 is formed on the 1st base insulating layer 3 with above-mentioned pattern.
Then, in the method, with reference to (e) of Fig. 8 and (f) of Fig. 8, the 2nd base insulating layer 5 is formed on metal support layer 2 and the 1st base insulating layer 3 with the above-mentioned pattern with ledge 93, the 2nd ground connection peristome 80 and the 2nd all sides 81.
Compare with the inner diameter D 1 of the 1st ground connection peristome 78, the inner diameter D 2 of the 2nd ground connection peristome 80 is preferably 10%～90% of inner diameter D 1 for example less than inner diameter D 1, and particularly, inner diameter D 2 is for example 10 μ m～100 μ m, is preferably 15 μ m～60 μ m.
Then, in the method, with reference to (g) of Fig. 8, form ground plane 6 with above-mentioned pattern.
Then, in the method, with reference to Fig. 2, form with above-mentioned pattern and cover insulating barrier 7.
Then, in the method, as shown in Figure 6, make metal support layer 2 opening to form supporting peristome 73, then, make the 1st base insulating layer 3 openings to form the 1st substrate peristome 76.
Afterwards, as required, externally form the not shown coat of metal on the surface of side signal terminal 9, then, metal support layer 2 is carried out sharp processing, as shown in Figure 1, by formation suspension 26, thereby acquisition is with the hanging base board 1 of circuit.
In the hanging base board 1 with circuit of Figure 10, when through-thickness carries out projection, because comprising the 2nd ground connection peristome 80 and the 2nd base insulating layer 5, the 1st ground connection peristome 78 is filled to all ends of the 1st ground connection peristome 78, thereby, be formed with the 2nd stage portion 16 of the 2nd base insulating layer 5 in the 1st ground connection peristome 78.Therefore, when support side earth terminal 59 to be filled to the 2nd ground connection peristome 80 when interior with the contacted mode of the upper surface of metal support layer 2, support side earth terminal 59 can contact with the 2nd stage portion 16 of the 2nd base insulating layer 5 and fluid-tight engagement, thereby can improve the 2nd base insulating layer 5 in the 1st ground connection peristome 78 and the 2nd ground connection peristome 80 and the adaptation between support side earth terminal 59.
Its result by improving the adaptation of ground plane 6 and the 2nd base insulating layer 5, can improve the reliability of grounding connection.
Particularly, support side earth terminal 59 is not formed on the 1st base insulating layer 3, but is formed at continuously on the upper surface and side (comprising the 2nd all sides 79) of the 2nd base insulating layer 5.That is, support side earth terminal 59 is formed on the surface of 1 base insulating layer continuously.
Therefore, compare with the lip-deep support side earth terminal 59 that is formed at two base insulating layer (the 1st base insulating layer 3 and the 2nd base insulating layer 5) of Fig. 3, the support side earth terminal 59 of Figure 10 can from the interface peel between the 1st base insulating layer 3 and the 2nd base insulating layer 5, can further not improve the adaptation of support side earth terminal 59 and the 2nd base insulating layer 5.
In addition, in the above-described embodiment, will take have metal support layer 2 with the hanging base board of circuit as example has illustrated wired circuit board of the present invention, but, wired circuit board of the present invention is not limited to this, for example, although do not illustrate, but, also can make wired circuit board of the present invention form the flexible printed circuit board that has as the metal support layer 2 of enhancement layer.
Embodiment
Below, embodiment and comparative example are shown, and further specifically describe the present invention, still, the invention is not restricted to these embodiment and comparative example.
Embodiment 1
The form of the 1st ground connection peristome in the scope of the 2nd ground connection peristome: Fig. 3
At first, preparation is by the metal support layer (with reference to (a) of Fig. 7) of stainless steel (SUS304) the paper tinsel formation of thickness 25 μ m, then, apply the varnish of photonasty polyamic acid resin and make its drying on the whole upper surface of metal support layer, thereby having formed the 1st substrate overlay film (with reference to (b) of Fig. 7).
Then, the 1st greyscale photo mask that will have the aforementioned mask pattern is configured in the upside of the 1st substrate overlay film, afterwards, across the 1st greyscale photo mask, the 1st substrate overlay film is exposed, and then, the 1st substrate overlay film is developed and it is heating and curing.Thus, formed the 1st base insulating layer (with reference to (c) of Fig. 7) that the polyimides by thickness 5 μ m consists of.
In addition, the 1st all sides (inclined plane) of the 1st ground connection peristome of overlooking toroidal and angle of inclination (α) 1.15 of internal diameter (D1) 60 μ m have been formed in the 1st base insulating layer.
Then, utilize addition process that conductor layer is formed on base insulating layer.
Particularly, when carrying out addition process, by sputter chromium and sputter copper, whole upper surface in metal support substrate and the 1st base insulating layer forms the chromium thin film of thickness 0.03 μ m and the copper film of thickness 0.07 μ m successively, as the 1st metallic film, then, the anti-coating that has with the conductor layer opposite pattern is formed on the surface of the 1st metallic film.Then, utilize electrolytic copper plating make the conductor layer of thickness 10 μ m be formed at the 1st metallic film from the surface that anti-coating exposes.Then, utilize chemical etching to remove the part that is formed with anti-coating (with reference to (d) of Fig. 7) of anti-coating and the 1st metallic film.
In addition, the width of each holding wire is 50 μ m.In addition, the width of each outer side signal terminal and each head side signal terminal is 280 μ m.
Then, apply the varnish of photonasty polyamic acid resin and make its drying on the whole upper surface of metal support substrate, the 1st base insulating layer and conductor layer, thereby having formed the 2nd substrate overlay film (with reference to (e) of Fig. 8).
Then, the 2nd greyscale photo mask that will have the aforementioned mask pattern is configured in the upside of the 2nd substrate overlay film, afterwards, across the 2nd greyscale photo mask, the 2nd substrate overlay film is exposed, and then, the 2nd substrate overlay film is developed and it is heating and curing.Thus, formed the 2nd base insulating layer (with reference to (f) of Fig. 8) that the polyimides by thickness 5 μ m consists of.
Overlook toroidal the 2nd ground connection peristome and angle of inclination (β) that have formed internal diameter (D2) 100 μ m in the 2nd base insulating layer are the 2nd all sides (inclined plane) of 1.15, and the 2nd ground connection peristome comprises the 1st ground connection peristome.In addition, formed the 2nd substrate peristome (with reference to Fig. 2) that exposes for the upper surface that makes the outer side signal terminal in the 2nd base insulating layer.
Then, utilize addition process to form ground plane.
When carrying out addition process, by sputter chromium and sputter copper, whole upper surface in metal support substrate, the 1st base insulating layer and the 2nd base insulating layer forms the chromium thin film of thickness 0.03 μ m and the copper film of thickness 0.07 μ m successively, as the 2nd metallic film, then, the anti-coating that has with the ground plane opposite pattern is formed on the surface of the 2nd metallic film.Then, utilize electrolytic copper plating make the ground plane of thickness 10 μ m be formed at the 2nd metallic film from the surface that anti-coating exposes.Then, utilize chemical etching to remove the part that is formed with anti-coating (with reference to (g) of Fig. 8) of anti-coating and the 2nd metallic film.
The support side earth terminal forms the toroidal of the external diameter 160 μ m that comprise the 2nd ground connection peristome, and the central authorities of support side earth terminal are to be filled in the 1st ground connection peristome (with reference to Fig. 3) with the contacted mode of the upper surface of metal support layer.
Then, after applying the varnish of photonasty polyamic acid resin and make its drying on the whole upper surface of metal support layer, the 2nd base insulating layer and ground plane, expose, develop, be heating and curing, thereby formed to be formed with the pattern that covers peristome the covering insulating barrier (with reference to (h) of Fig. 8) that the polyimides by thickness 5 μ m consists of.
Then, utilize chemical etching with metal support layer opening to form supporting peristome (with reference to Fig. 1), then, utilize plasma etching with the 1st base insulating layer opening forming the substrate peristome, thereby the outer side signal terminal has been set as fly line.
Afterwards, form suspension by the metal support layer is carried out sharp processing, thereby obtained the hanging base board (with reference to Fig. 1) with circuit.
The 1st ground connection peristome comprises the form of the 2nd ground connection peristome: Figure 10
In the forming process of the 1st base insulating layer, the internal diameter (D1) of the 1st ground connection peristome is changed to 100 μ m, in the forming process of the 2nd base insulating layer, the internal diameter (D2) of the 2nd ground connection peristome is changed to 60 μ m and formed the 2nd ground connection peristome so that the 1st ground connection peristome comprises the mode of the 2nd ground connection peristome, in addition, the utilization method identical with embodiment 1 obtained the hanging base board (with reference to Fig. 1) with circuit.
Comparative example 1
In the forming process of the 2nd base insulating layer, the internal diameter (D2) of the 2nd ground connection peristome is changed to 60 μ m, namely, the internal diameter (D1) of the 1st ground connection peristome and the internal diameter (D2) of the 2nd ground connection peristome have been set as same diameter (60 μ m) and have formed the 1st ground connection peristome and the 2nd ground connection peristome overlapped, in addition, the utilization method identical with embodiment 1 obtained the hanging base board (with reference to Figure 11) with circuit.
Estimate
Adaptation
As follows, to embodiment 1,2 and the support side earth terminal of comparative example 1 and the adaptation of the 1st base insulating layer and the 2nd base insulating layer estimate.
That is, by utilizing thermal shock test, the conduction resistance value rate of change is confirmed, thereby estimated adaptation.
Its result, confirm: compare with the support side earth terminal of comparative example 1, the support side earth terminal of embodiment 1 and embodiment 2 has improved the adaptation with the 1st base insulating layer and the 2nd base insulating layer.
In addition, provide above-mentioned explanation as illustrative execution mode of the present invention, but above-mentioned explanation can not be interpreted as for limiting the present invention nothing but illustration.Apparent variation of the present invention is included in claims for a person skilled in the art.
Claims (4)
1. a wired circuit board, is characterized in that,
This wired circuit board comprises the metal support layer, be formed at the 1st insulating barrier on above-mentioned metal support layer, be formed at conductor layer on above-mentioned the 1st insulating barrier, be formed at the 2nd insulating barrier on above-mentioned the 1st insulating barrier, be formed at the ground plane on above-mentioned the 2nd insulating barrier in the mode that covers above-mentioned conductor layer
Be formed with the 1st peristome that through-thickness connects above-mentioned the 1st insulating barrier in above-mentioned the 1st insulating barrier,
Be formed with in above-mentioned the 2nd insulating barrier along above-mentioned thickness direction above-mentioned the 2nd insulating barrier of perforation and 2nd peristome corresponding with above-mentioned the 1st peristome,
When through-thickness carried out projection, above-mentioned the 1st peristome was in above-mentioned the 2nd peristome scope, and above-mentioned ground plane is filled in above-mentioned the 1st peristome via above-mentioned the 2nd peristome in the mode that the upper surface with above-mentioned metal support layer contacts, perhaps,
When through-thickness carries out projection, above-mentioned the 1st peristome comprises above-mentioned the 2nd peristome, above-mentioned the 2nd insulating barrier is filled to all ends of above-mentioned the 1st peristome, and the mode that above-mentioned ground plane contacts with the upper surface with above-mentioned metal support layer is filled in above-mentioned the 2nd peristome.
2. wired circuit board according to claim 1, is characterized in that,
All sides of above-mentioned the 1st peristome of above-mentioned the 1st insulating barrier form in the mode that tilts with respect to thickness direction, and/or,
All sides of above-mentioned the 2nd peristome of above-mentioned the 2nd insulating barrier form in the mode that tilts with respect to thickness direction.
3. wired circuit board according to claim 1, is characterized in that,
Above-mentioned the 1st insulating barrier and/or above-mentioned the 2nd insulating barrier are formed by photoresist.
4. wired circuit board according to claim 3, is characterized in that,
By across photomask, above-mentioned photoresist being exposed, thereby form above-mentioned the 1st insulating barrier and/or above-mentioned the 2nd insulating barrier.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2011235859A JP5829100B2 (en) | 2011-10-27 | 2011-10-27 | Printed circuit board |
| JP2011-235859 | 2011-10-27 |
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| CN103096614A true CN103096614A (en) | 2013-05-08 |
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| CN106954346A (en) * | 2015-12-25 | 2017-07-14 | 日东电工株式会社 | The manufacture method of wired circuit board |
| CN106973513A (en) * | 2015-12-25 | 2017-07-21 | 日东电工株式会社 | Wired circuit board |
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| US11026334B2 (en) | 2016-04-07 | 2021-06-01 | Nitto Denko Corporation | Wired circuit board and producing method thereof |
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| JP6228454B2 (en) * | 2013-12-26 | 2017-11-08 | 日東電工株式会社 | Suspension board with circuit and manufacturing method thereof |
| JP6778585B2 (en) * | 2016-11-02 | 2020-11-04 | 日東電工株式会社 | Wiring circuit board and its manufacturing method |
| JP7407498B2 (en) | 2017-09-15 | 2024-01-04 | 日東電工株式会社 | Wired circuit board and its manufacturing method |
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| CN106954346B (en) * | 2015-12-25 | 2021-02-05 | 日东电工株式会社 | Method for manufacturing printed circuit board |
| US11026334B2 (en) | 2016-04-07 | 2021-06-01 | Nitto Denko Corporation | Wired circuit board and producing method thereof |
| CN110033793A (en) * | 2017-12-27 | 2019-07-19 | 日东电工株式会社 | The manufacturing method of hanging base board with circuit and the hanging base board with circuit |
| CN110033793B (en) * | 2017-12-27 | 2021-12-03 | 日东电工株式会社 | Suspension board with circuit and method for manufacturing suspension board with circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013093506A (en) | 2013-05-16 |
| JP5829100B2 (en) | 2015-12-09 |
| CN103096614B (en) | 2017-07-07 |
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