CN103094935B - A kind of battery equalizing circuit and metal-oxide-semiconductor switching circuit - Google Patents
A kind of battery equalizing circuit and metal-oxide-semiconductor switching circuit Download PDFInfo
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Abstract
The invention discloses a kind of battery equalizing circuit, comprising: electric capacity, its first end receiver voltage control signal, voltage control signal is the pulse signal comprising the first level signal and second electrical level signal; Metal-oxide-semiconductor, its first end connects the second end of electric capacity; Resistance, its first end connects the first end of metal-oxide-semiconductor, and the second end connects the 3rd end of metal-oxide-semiconductor; Clamp members, its first end connects the first end of metal-oxide-semiconductor, second end connects the 3rd end of metal-oxide-semiconductor, and clamp members disconnects when voltage control signal jumps to the first level signal from second electrical level signal, and the conducting when voltage control signal jumps to second electrical level signal from the first level signal.The present invention further provides a kind of metal-oxide-semiconductor switching circuit.By with upper type, battery equalizing circuit provided by the invention and metal-oxide-semiconductor switching circuit can improve the job stability of circuit effectively.
Description
Technical field
The present invention relates to a kind of battery equalizing circuit, particularly relate to a kind of battery equalizing circuit and the metal-oxide-semiconductor switching circuit that electricity in the battery of series connection use are carried out to equilibrium.
Background technology
In the use procedure of battery, battery is used by series connection with the demand providing higher output voltage and larger power capacity to drive to meet load usually.But, no matter be lithium rechargeable batteries, plumbic acid rechargeable battery or nickel-hydrogen chargeable cell, due to the restriction of its process conditions, cause may there is certain difference between battery cell.Although the mode by combo solves the difference problem between battery cell, but after repeatedly charge and discharge cycles, still can produce larger voltage difference between battery cell, the available capacity of series battery be reduced, and then affects serviceability and the life-span of battery pack.
Therefore, need to provide a kind of battery equalizing circuit, with solve in prior art connect use battery cell between difference problem.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of battery equalizing circuit and metal-oxide-semiconductor switching circuit, effectively to improve the job stability of circuit.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of battery equalizing circuit, comprise: electric capacity, the first end receiver voltage control signal of electric capacity, voltage control signal is the pulse signal comprising the first level signal and second electrical level signal; Metal-oxide-semiconductor, the first end of metal-oxide-semiconductor connects the second end of electric capacity; Resistance, the first end of resistance connects the first end of metal-oxide-semiconductor, and the second end of resistance connects the 3rd end of metal-oxide-semiconductor, to make the second end and the conducting under the effect of the first level signal of the 3rd end of metal-oxide-semiconductor, and disconnects under the effect of the second voltage signal; Clamp members, the first end of clamp members connects the first end of metal-oxide-semiconductor, second end of clamp members connects the 3rd end of metal-oxide-semiconductor, clamp members disconnects when voltage control signal jumps to the first level signal from second electrical level signal, and the conducting when voltage control signal jumps to second electrical level signal from the first level signal;
Metal-oxide-semiconductor is P type metal-oxide-semiconductor, and the first end of metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of P type metal-oxide-semiconductor, drain electrode and source electrode;
Clamp members is one way conducting device, and the positive pole of one way conducting device connects the first end of metal-oxide-semiconductor, and the negative pole of one way conducting device connects the 3rd end of metal-oxide-semiconductor, and one way conducting device is diode, and diode is voltage stabilizing didoe or Transient Suppression Diode;
Clamp members is reverse-conducting when the 3rd end of metal-oxide-semiconductor powers on, and during clamp members reverse-conducting, the voltage difference at two ends is less than the withstand voltage between the first end of metal-oxide-semiconductor and the 3rd end.
For solving the problems of the technologies described above, another technical solution used in the present invention is: provide a kind of metal-oxide-semiconductor switching circuit, comprise: electric capacity, the first end receiver voltage control signal of electric capacity, voltage control signal is the pulse signal comprising the first level signal and second electrical level signal; Metal-oxide-semiconductor, the first end of metal-oxide-semiconductor connects the second end of electric capacity; Resistance, the first end of resistance connects the first end of metal-oxide-semiconductor, and the second end of resistance connects the 3rd end of metal-oxide-semiconductor, to make the second end and the conducting under the effect of the first level signal of the 3rd end of metal-oxide-semiconductor, and disconnects under the effect of the second voltage signal; Clamp members, the first end of clamp members connects the first end of metal-oxide-semiconductor, second end of clamp members connects the 3rd end of metal-oxide-semiconductor, clamp members disconnects when voltage control signal jumps to the first level signal from second electrical level signal, and the conducting when voltage control signal jumps to second electrical level signal from the first level signal; Clamp members is reverse-conducting when the 3rd end of metal-oxide-semiconductor powers on, and the voltage difference at two ends is less than the withstand voltage between the first end of metal-oxide-semiconductor and the 3rd end during clamp members reverse-conducting, clamp members is one way conducting device, one way conducting device is diode, and diode is voltage stabilizing didoe or Transient Suppression Diode.
According to one preferred embodiment of the present invention, metal-oxide-semiconductor is P type metal-oxide-semiconductor, the first end of metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of P type metal-oxide-semiconductor, drain electrode and source electrode, and the positive pole of one way conducting device connects the first end of metal-oxide-semiconductor, and the negative pole of one way conducting device connects the 3rd end of metal-oxide-semiconductor.
According to one preferred embodiment of the present invention, metal-oxide-semiconductor is N-type metal-oxide-semiconductor, the first end that the first end of metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of N-type metal-oxide-semiconductor, drain electrode is connected metal-oxide-semiconductor with the negative pole of source electrode one way conducting device, the positive pole of one way conducting device connects the 3rd end of metal-oxide-semiconductor.
The invention has the beneficial effects as follows: the situation being different from prior art, battery equalizing circuit provided by the invention and metal-oxide-semiconductor switching circuit can improve the job stability of circuit effectively.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of battery equalizing circuit according to a first embodiment of the present invention;
Fig. 2 is the circuit diagram of battery equalizing circuit according to a second embodiment of the present invention;
Fig. 3 is the circuit diagram of battery equalizing circuit according to a third embodiment of the present invention;
Fig. 4 is the circuit diagram of battery equalizing circuit according to a fourth embodiment of the present invention;
Fig. 5 is the circuit diagram of battery equalizing circuit according to a fifth embodiment of the present invention;
Fig. 6 is the oscillogram of the battery equalizing circuit of the according to a third embodiment of the present invention with five embodiment;
Fig. 7 is another oscillogram of the battery equalizing circuit of the according to a third embodiment of the present invention with five embodiment.
Embodiment
Refer to Fig. 1, the circuit diagram of Fig. 1 battery equalizing circuit according to a first embodiment of the present invention.In the present embodiment, battery BT1, BT2 is connected in series.Specifically, the negative pole of battery BT1 is connected with the positive pole of battery BT2.The battery equalizing circuit of the present embodiment comprises K switch 1, K2, inductance L 1 and diode D1, D2.
In the present embodiment, K switch 1 comprises first end, the second end and the 3rd end.The first end of K switch 1 for receiving the first control signal CTL1, to make the second end and the selectivity conducting under the effect of the first control signal CTL1 of the 3rd end of K switch 1.3rd end of K switch 1 is connected with the positive pole of battery BT1 further.
In the present embodiment, K switch 2 comprises first end, the second end and the 3rd end equally.The first end of K switch 2 for receiving the second control signal CTL2, to make the second end and the selectivity conducting under the effect of the second control signal CTL2 of the 3rd end of K switch 2.Second end of K switch 2 is connected with the second end of K switch 1 further, and the 3rd end of K switch 2 is connected with the negative pole of battery BT2 further.
In the present embodiment, the first end of inductance L 1 is connected between the negative pole of battery BT1 and the positive pole of battery BT2, and the second end of inductance L 1 is connected between the second end of K switch 1 and the second end of K switch 2.
In the present embodiment, the positive pole of diode D1 connects the second end of inductance L 1, and the negative pole of diode D1 connects the positive pole of battery BT1.The negative pole of diode D2 connects the second end of inductance L 1, and the positive pole of diode D2 connects the negative pole of battery BT2.
In use, when the voltage of the voltage of battery BT1 higher than battery BT2 being detected, when needing the electricity of battery BT1 to transfer to battery BT2, the second end and the conducting under the effect of the first control signal CTL1 of the 3rd end of K switch 1 is made by controlling the first control signal CTL1, battery BT1 charges to inductance L 1, and then is stored in inductance L 1 by the electricity of battery BT1.Subsequently, by controlling the first control signal CTL1, the second end of K switch 1 and the 3rd end are disconnected under the effect of the first control signal CTL1.Now, the electricity that inductance L 1 stores transfers to battery BT2 through diode D2.Otherwise, when the voltage of the voltage of battery BT2 higher than battery BT1 being detected, when needing the electricity of battery BT2 to transfer to battery BT1, the second end and the conducting under the effect of the second control signal CTL2 of the 3rd end of K switch 2 is made by controlling the second control signal CTL2, battery BT2 charges to inductance L 1, and then is stored in inductance L 1 by the electricity of battery BT2.Subsequently, by controlling the second control signal CTL2, the second end of K switch 2 and the 3rd end are disconnected under the effect of the second control signal CTL2.Now, the electricity that inductance L 1 stores transfers to battery BT1 through diode D1.
In the present embodiment, diode D1, D2 can be general-purpose diode, Schottky diode, Transient Suppression Diode (TVS), voltage stabilizing didoe or other one-way conduction elements.
Refer to Fig. 2, Fig. 2 is the circuit diagram of battery equalizing circuit according to a second embodiment of the present invention.In the present embodiment, battery BT1, BT2 is connected in series.Specifically, the negative pole of battery BT1 is connected with the positive pole of battery BT2.The battery equalizing circuit of the present embodiment comprises K switch 1, K2, inductance L 1, diode D1, D2 and electric capacity C1, C2.The difference part of the first embodiment shown in the present embodiment and Fig. 1 is: the battery equalizing circuit of the present embodiment comprises electric capacity C1, C2 further, and wherein electric capacity C1 is in parallel with battery BT1, and electric capacity C2 is in parallel with battery BT2.The effect of electric capacity C1, C2 plays certain cushioning effect when inductance L 1 couple of battery BT1, BT2 charge, and improves the charging effect of battery BT1, BT2.
Refer to Fig. 3, Fig. 3 is the circuit diagram of battery equalizing circuit according to a third embodiment of the present invention.In the present embodiment, battery BT1, BT2 is connected in series.Specifically, the negative pole of battery BT1 is connected with the positive pole of battery BT2.The battery equalizing circuit of the present embodiment comprises electric capacity C1, C2, metal-oxide-semiconductor Q1, Q2, resistance R1, R2, inductance L 1 and diode D1, D2.
In the present embodiment, the first end of electric capacity C1 receives the first control signal CTL1, and the first end of metal-oxide-semiconductor Q1 connects second end of electric capacity C1.In the present embodiment, the first control signal CTL1 is specially the first voltage control signal CTL1.3rd end of metal-oxide-semiconductor Q1 is connected with the positive pole of battery BT1 further.The first end of resistance R1 connects the first end of metal-oxide-semiconductor Q1, and second end of resistance R1 connects the 3rd end of metal-oxide-semiconductor Q1.Thus, second end of metal-oxide-semiconductor Q1 and the 3rd end can selectivity conductings under the effect of the first voltage control signal CTL1.In the present embodiment, metal-oxide-semiconductor Q1 is P type metal-oxide-semiconductor, and the first end of metal-oxide-semiconductor Q1, the second end and the 3rd end are respectively the grid of P type metal-oxide-semiconductor, drain electrode and source electrode.
In the present embodiment, the first end of electric capacity C2 receives the second control signal CTL2, and the first end of metal-oxide-semiconductor Q2 connects second end of electric capacity C2.In the present embodiment, the second control signal CTL2 is specially the second voltage control signal CTL2.Second end of metal-oxide-semiconductor Q2 is connected with second end of metal-oxide-semiconductor Q1 further, and the 3rd end of metal-oxide-semiconductor Q2 is connected with the negative pole of battery BT2 further.Second end of inductance L 1 is connected between second end of metal-oxide-semiconductor Q1 and second end of metal-oxide-semiconductor Q2.The first end of resistance R2 connects the first end of metal-oxide-semiconductor Q2, and second end of resistance R2 connects the 3rd end of metal-oxide-semiconductor Q2.Thus, second end of metal-oxide-semiconductor Q2 and the 3rd end can selectivity conductings under the effect of the second voltage control signal CTL2.In the present embodiment, metal-oxide-semiconductor Q2 is N-type metal-oxide-semiconductor, and the first end of metal-oxide-semiconductor Q2, the second end and the 3rd end are respectively the grid of N-type metal-oxide-semiconductor, drain electrode and source electrode.
Can find from the comparative result of Fig. 1 and Fig. 3, the electric capacity C1 in the 3rd embodiment, metal-oxide-semiconductor Q1 and resistance R1 play the effect of the K switch 1 of the first embodiment, and electric capacity C2, metal-oxide-semiconductor Q2 and resistance R2 play the effect of the K switch 2 of the first embodiment.Certainly, those skilled in the art can expect utilizing other switches well known in the art to realize the effect of K switch 1, K2 completely, such as triode switch or relay switch.
Refer to Fig. 4, the circuit diagram of Fig. 4 battery equalizing circuit according to a fourth embodiment of the present invention.In the present embodiment, battery BT1, BT2 is connected in series.Specifically, the negative pole of battery BT1 is connected with the positive pole of battery BT2.The battery equalizing circuit of the present embodiment comprises electric capacity C1, C2, C3, metal-oxide-semiconductor Q1, Q2, resistance R1, R2, inductance L 1 and diode D1, D2.The difference part of the 3rd embodiment shown in the present embodiment and Fig. 3 is: the battery equalizing circuit of the present embodiment arranges electric capacity C3 further, and wherein the first end of electric capacity C3 connects the first end of metal-oxide-semiconductor Q1, and second end of electric capacity C3 connects the 3rd end of metal-oxide-semiconductor Q1.
The function of electric capacity C3 is further described below in conjunction with Fig. 3 and Fig. 4.Refer to Fig. 3, in the 3rd embodiment shown in Fig. 3, when driven MOS pipe Q2 works, the second voltage control signal CTL2 produces the pulse signal of certain frequency at the first end of metal-oxide-semiconductor Q2 by electric capacity C2, and then control conducting and the disconnection of metal-oxide-semiconductor Q2.Because the conducting of metal-oxide-semiconductor Q2 and disconnection can cause the pulse signal producing same frequency at second end of metal-oxide-semiconductor Q2.Simultaneously, because second end of metal-oxide-semiconductor Q2 is connected with second end of metal-oxide-semiconductor Q1, and the first end of metal-oxide-semiconductor Q1 and the second end and there is junction capacitance between first end and the 3rd end, therefore will produce the effect of capacitance partial pressure, make the pulse voltage division signal occurring a same frequency between the first end of metal-oxide-semiconductor Q1 and the 3rd end.When the electric current flowing through metal-oxide-semiconductor Q2 is enough large, the amplitude of the pulse voltage division signal between the first end of metal-oxide-semiconductor Q1 and the 3rd end is enough to metal-oxide-semiconductor Q1 to open, and makes the second end and the 3rd end conducting of metal-oxide-semiconductor Q1.Now, because metal-oxide-semiconductor Q1, Q2 open simultaneously, cause short circuit, therefore can burn out metal-oxide-semiconductor Q1, Q2.
In the present embodiment, the first end of electric capacity C3 connects the first end of metal-oxide-semiconductor Q1, second end of electric capacity C3 connects the 3rd end of metal-oxide-semiconductor Q1, is equivalent to, by parallel with electric capacity C3 for the junction capacitance between the first end of metal-oxide-semiconductor Q1 with the 3rd end, cause the capacitance after parallel connection to increase.According to principle of capacitive divider, capacitance partial pressure and capacitance are inversely proportional to, and therefore make the amplitude of the pulse voltage division signal between the first end of metal-oxide-semiconductor Q1 and the 3rd end diminish, and then ensure to open metal-oxide-semiconductor Q1, improve the stability of battery equalizing circuit.
In like manner, in the 4th embodiment shown in Fig. 4, when driven MOS pipe Q1 works, between the first end and the 3rd end of metal-oxide-semiconductor Q2, also there will be the pulse voltage division signal of a same frequency.Therefore, can between the first end of metal-oxide-semiconductor Q2 with the 3rd end a same electric capacity in parallel, reduce the capacitance partial pressure between the first end of metal-oxide-semiconductor Q2 and the 3rd end, and then improve the stability of battery equalizing circuit.
Refer to Fig. 5, Fig. 5 is the circuit diagram of battery equalizing circuit according to a fifth embodiment of the present invention.In the present embodiment, battery BT1, BT2 is connected in series.Specifically, the negative pole of battery BT1 is connected with the positive pole of battery BT2.The battery equalizing circuit of the present embodiment comprises electric capacity C1, C2, metal-oxide-semiconductor Q1, Q2, resistance R1, R2, inductance L 1 and diode D1, D2, D3, D4.The difference part of the 3rd embodiment shown in the present embodiment and Fig. 3 is: the battery equalizing circuit of the present embodiment arranges diode D3, D4 further, wherein the positive pole of diode D3 connects the grid of metal-oxide-semiconductor Q1, the negative pole of diode D3 connects the source electrode of metal-oxide-semiconductor Q1, the negative pole of diode D4 connects the grid of metal-oxide-semiconductor Q2, and the positive pole of diode D4 connects the source electrode of metal-oxide-semiconductor Q2.
The function of diode D3, D4 is further described below in conjunction with Fig. 3,5-7.Refer to Fig. 6-7, as shown in the waveform 1 of Fig. 6 and the waveform 4 of Fig. 7, in the battery equalizing circuit shown in Fig. 3, the first voltage control signal CTL1 that electric capacity C1, C2 receive and the second voltage control signal CTL2 is respectively the pulse signal comprising high level signal (5V) and low level signal (0V).Wherein, when the first voltage control signal CTL1 is low level signal, second end of metal-oxide-semiconductor Q1 and the 3rd end conducting, when the first voltage control signal CTL1 is high level signal, second end of metal-oxide-semiconductor Q1 and the 3rd end disconnect.When the second voltage control signal CTL2 is high level signal, second end of metal-oxide-semiconductor Q2 and the 3rd end conducting, when the second voltage control signal CTL2 is low level signal, second end of metal-oxide-semiconductor Q2 and the 3rd end disconnect.
Specifically, as shown in the waveform 1 of Fig. 6 and waveform 2, when metal-oxide-semiconductor Q1 does not work, the first voltage control signal CTL1 that electric capacity C1 receives is lasting high level signal.Now, the grid voltage of metal-oxide-semiconductor Q1 equals the source voltage Vs1 of metal-oxide-semiconductor Q1, and metal-oxide-semiconductor Q1 ends.When metal-oxide-semiconductor Q1 opened by needs, the first voltage control signal CTL1 that electric capacity C1 receives jumps to low level signal from the high level signal continued, and the grid voltage of metal-oxide-semiconductor Q1 is from Vs1 instantaneous abrupt change to Vs1-5V.Now, the source voltage Vs1 of metal-oxide-semiconductor Q1, higher than the grid voltage of metal-oxide-semiconductor Q1, makes metal-oxide-semiconductor Q1 open, and then the drain electrode conducting of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q1.Meanwhile, electric capacity C1 is charged by resistance R1, and the grid voltage of metal-oxide-semiconductor Q1 is slowly raised from Vs1-5V.When metal-oxide-semiconductor Q1 closed by needs, the first voltage control signal CTL1 that electric capacity C1 receives jumps to high level signal from low level signal, the grid voltage upwards saltus step 5V of metal-oxide-semiconductor Q1.Now, the voltage difference between the source voltage of metal-oxide-semiconductor Q1 and the grid voltage of metal-oxide-semiconductor Q1 is not enough to open metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q1 is ended, and then the drain electrode of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q1 disconnects.Meanwhile, electric capacity C1 is discharged by resistance R1, and the grid voltage of metal-oxide-semiconductor Q1 is slowly declined.But, shown in the waveform 2 of such as Fig. 6, when the effective duty cycle of the first voltage control signal CTL1 constantly increases (more than 50%), charging interval due to electric capacity C1 is greater than discharge time of electric capacity C1, the grid voltage of metal-oxide-semiconductor Q1 is caused to continue to raise, to such an extent as to when the first voltage control signal CTL1 is low level signal, the voltage difference between the grid voltage of metal-oxide-semiconductor Q1 and the source voltage of metal-oxide-semiconductor Q1 also cannot normally open metal-oxide-semiconductor Q1, causes metal-oxide-semiconductor Q1 normally to work.
In like manner, as shown in the waveform 4 of Fig. 7 and waveform 5, when metal-oxide-semiconductor Q2 does not work, the second voltage control signal CTL2 that electric capacity C2 receives is lasting low level signal.Now, the grid voltage of metal-oxide-semiconductor Q2 equals the source voltage Vs2 of metal-oxide-semiconductor Q2, and metal-oxide-semiconductor Q2 ends.When metal-oxide-semiconductor Q2 opened by needs, the second voltage control signal CTL2 that electric capacity C2 receives jumps to high level signal from the low level signal continued, and the grid voltage of metal-oxide-semiconductor Q2 jumps to Vs2+5V from Vs2.Now, the source voltage of metal-oxide-semiconductor Q2, lower than the grid voltage of metal-oxide-semiconductor Q2, makes metal-oxide-semiconductor Q2 open, and then the drain electrode conducting of the source electrode of metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q2.With this simultaneously, electric capacity C2 is charged by resistance R2, and the grid voltage of metal-oxide-semiconductor Q2 is slowly reduced from Vs2+5V.When metal-oxide-semiconductor Q2 closed by needs, when the second voltage control signal CTL2 that electric capacity C2 receives jumps to low level signal from high level signal, the downward saltus step 5V of grid voltage of metal-oxide-semiconductor Q2.Now, between the grid voltage of metal-oxide-semiconductor Q2 and the source voltage of metal-oxide-semiconductor Q2, voltage difference is not enough to open metal-oxide-semiconductor Q2, and metal-oxide-semiconductor Q2 ends, and then the drain electrode of the source electrode of metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q2 disconnects.Meanwhile, electric capacity C2 is discharged by resistance R2, and the grid voltage of metal-oxide-semiconductor Q2 is slowly raised.But, shown in the waveform 5 of such as Fig. 7, when the effective duty cycle of the second voltage control signal CTL2 constantly increases (more than 50%), charging interval due to electric capacity C2 is greater than discharge time of electric capacity C2, the grid voltage of metal-oxide-semiconductor Q2 is caused to continue to reduce, to such an extent as to when the second voltage control signal CTL2 is high level signal, the voltage difference between the grid voltage of metal-oxide-semiconductor Q2 and the source voltage of metal-oxide-semiconductor Q2 also cannot open metal-oxide-semiconductor Q2, causes metal-oxide-semiconductor Q2 normally to work.
As shown in Figure 5, in the present embodiment, the positive pole of diode D3 connects the grid of metal-oxide-semiconductor Q1, and the negative pole of diode D3 connects the source electrode of metal-oxide-semiconductor Q1.Now, as shown in the waveform 3 of Fig. 6, when the first voltage control signal CTL1 jumps to low level signal from high level signal, because the grid voltage of metal-oxide-semiconductor Q1 is lower than the source voltage of metal-oxide-semiconductor Q1, diode D3 is ended disconnect, electric capacity C1 is slowly charged by resistance R1.When the first voltage control signal CTL1 jumps to high level signal from low level signal, the grid voltage due to metal-oxide-semiconductor Q1 is greater than the source voltage of metal-oxide-semiconductor Q1, makes diode D3 conducting.Now, electric capacity C1 is discharged rapidly by diode D3, by the source voltage of quick for the grid voltage of metal-oxide-semiconductor Q1 clamper to metal-oxide-semiconductor Q1.Specifically, when between the grid voltage and the source voltage of metal-oxide-semiconductor Q1 of metal-oxide-semiconductor Q1, voltage difference is greater than the conducting voltage of diode D3, diode D3 conducting, electric capacity C1 is discharged rapidly by diode D3.When between the grid voltage and the source voltage of metal-oxide-semiconductor Q1 of metal-oxide-semiconductor Q1, voltage difference equals and is less than the conducting voltage of diode D3, diode D3 ends disconnection, and electric capacity C1 is slowly discharged by resistance R1.
In like manner, as shown in Figure 5, in the present embodiment, the negative pole of diode D4 connects the grid of metal-oxide-semiconductor Q2, and the positive pole of diode D4 connects the source electrode of metal-oxide-semiconductor Q2.Now, as shown in the waveform 6 of Fig. 7, when the second voltage control signal CTL2 jumps to high level signal from low level signal, because the grid voltage of metal-oxide-semiconductor Q2 is higher than the source voltage of metal-oxide-semiconductor Q2, diode D4 is ended disconnect, electric capacity C4 is slowly charged by resistance R2.When the second voltage control signal CTL2 jumps to low level signal from high level signal, the source voltage due to metal-oxide-semiconductor Q2 is greater than the grid voltage of metal-oxide-semiconductor Q2, makes diode D4 conducting.Now, electric capacity C2 is discharged rapidly by diode D4, by the source voltage of quick for the grid voltage of metal-oxide-semiconductor Q2 clamper to metal-oxide-semiconductor Q2.Specifically, when between the source voltage and the grid voltage of metal-oxide-semiconductor Q2 of metal-oxide-semiconductor Q2, voltage difference is greater than the conducting voltage of diode D4, diode D4 conducting, electric capacity C2 is discharged rapidly by diode D4.When between the grid voltage and the source voltage of metal-oxide-semiconductor Q2 of metal-oxide-semiconductor Q2, voltage difference equals and is less than the conducting voltage of diode D3, diode D3 ends disconnection, and electric capacity C2 is slowly discharged by resistance R2.
By the way, utilize the clamping action of diode D3, D4, avoid due to effective duty cycle that to increase electric capacity C1, C2 electric discharge produced insufficient and that cause metal-oxide-semiconductor Q1, Q2 cannot normally work.
In the present embodiment, diode D3, D4 can be general-purpose diode, Schottky diode, Transient Suppression Diode (TVS), voltage stabilizing didoe or other one-way conduction elements.
At preferred embodiment, diode D3 adopts voltage stabilizing didoe.The further effect of this voltage stabilizing didoe is: when the source electrode of metal-oxide-semiconductor Q1 powers on instantaneously, voltage stabilizing didoe reverse-conducting, by the source voltage of the grid voltage clamper of metal-oxide-semiconductor Q1 to metal-oxide-semiconductor Q1.Now, voltage difference due to voltage stabilizing didoe two ends is less than the withstand voltage between the source electrode of metal-oxide-semiconductor Q1 and grid, and the source electrode and the grid that therefore avoid the metal-oxide-semiconductor Q1 caused because voltage difference between the source electrode of metal-oxide-semiconductor Q1 and grid is greater than withstand voltage when powering on instantaneously are breakdown.
In other embodiments, voltage stabilizing didoe also can be realized by other clamp members, such as unidirectional TVS, two-way TVS or piezo-resistance, only need guarantee when the source electrode of metal-oxide-semiconductor Q1 powers on instantaneously clamp members can conducting and conducting time clamp members two ends voltage difference be less than withstand voltage between the source electrode of metal-oxide-semiconductor Q1 and grid.It should be noted that when adopting separately piezo-resistance, the repid discharge to electric capacity C1 as described above cannot be realized, therefore can realize above-mentioned two effects by parallel with general-purpose diode for piezo-resistance simultaneously.
After reading foregoing, those skilled in the art can expect above-described embodiment to combine completely, or are converted on other similar metal-oxide-semiconductor switching circuits.
By with upper type, battery equalizing circuit of the present invention is balancing battery electricity effectively, thus improves the life-span of battery pack.In addition, this battery equalizing circuit and metal-oxide-semiconductor switching circuit improve the job stability of circuit.
These are only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (2)
1. a battery equalizing circuit, is characterized in that, comprising:
Electric capacity, the first end receiver voltage control signal of described electric capacity, described voltage control signal is the pulse signal comprising the first level signal and second electrical level signal;
Metal-oxide-semiconductor, the first end of described metal-oxide-semiconductor connects the second end of described electric capacity;
Resistance, the first end of described resistance connects the first end of described metal-oxide-semiconductor, second end of described resistance connects the 3rd end of described metal-oxide-semiconductor, to make the conducting under the effect of described first level signal of the second end of described metal-oxide-semiconductor and the 3rd end, and disconnects under the effect of described second electrical level signal;
Clamp members, the first end of described clamp members connects the first end of described metal-oxide-semiconductor, second end of described clamp members connects the 3rd end of described metal-oxide-semiconductor, described clamp members disconnects when described voltage control signal jumps to described first level signal from described second electrical level signal, and the conducting when described voltage control signal jumps to described second electrical level signal from described first level signal, described clamp members is one way conducting device, described one way conducting device is diode, and described diode is voltage stabilizing didoe or Transient Suppression Diode;
When described metal-oxide-semiconductor is P type metal-oxide-semiconductor, the first end of described metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of described P type metal-oxide-semiconductor, drain electrode and source electrode, the positive pole of described diode connects the grid of described metal-oxide-semiconductor, the negative pole of described diode connects the source electrode of described metal-oxide-semiconductor, described diode is reverse-conducting when the source electrode of described metal-oxide-semiconductor powers on, by the source voltage of the grid voltage clamper of described metal-oxide-semiconductor to described metal-oxide-semiconductor, and during described diode reverse conducting, the voltage difference at two ends is less than the withstand voltage between the grid of described metal-oxide-semiconductor and source electrode;
When described metal-oxide-semiconductor is N-type metal-oxide-semiconductor, the first end of described metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of described N-type metal-oxide-semiconductor, drain electrode and source electrode, the positive pole of described diode connects the source electrode of described metal-oxide-semiconductor, the negative pole of described diode connects the grid of described metal-oxide-semiconductor, the conducting when the source voltage of described MOS is greater than the grid voltage of described metal-oxide-semiconductor of described diode, by the source voltage of the grid voltage clamper of described metal-oxide-semiconductor to described metal-oxide-semiconductor.
2. a metal-oxide-semiconductor switching circuit, is characterized in that, comprising:
Electric capacity, the first end receiver voltage control signal of described electric capacity, described voltage control signal is the pulse signal comprising the first level signal and second electrical level signal;
Metal-oxide-semiconductor, the first end of described metal-oxide-semiconductor connects the second end of described electric capacity;
Resistance, the first end of described resistance connects the first end of described metal-oxide-semiconductor, second end of described resistance connects the 3rd end of described metal-oxide-semiconductor, to make the conducting under the effect of described first level signal of the second end of described metal-oxide-semiconductor and the 3rd end, and disconnects under the effect of described second electrical level signal;
Clamp members, the first end of described clamp members connects the first end of described metal-oxide-semiconductor, second end of described clamp members connects the 3rd end of described metal-oxide-semiconductor, described clamp members disconnects when described voltage control signal jumps to described first level signal from described second electrical level signal, and the conducting when described voltage control signal jumps to described second electrical level signal from described first level signal, described clamp members is one way conducting device, described one way conducting device is diode, and described diode is voltage stabilizing didoe or Transient Suppression Diode;
When described metal-oxide-semiconductor is P type metal-oxide-semiconductor, the first end of described metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of described P type metal-oxide-semiconductor, drain electrode and source electrode, the positive pole of described diode connects the grid of described metal-oxide-semiconductor, the negative pole of described diode connects the source electrode of described metal-oxide-semiconductor, described diode is reverse-conducting when the source electrode of described metal-oxide-semiconductor powers on, by the source voltage of the grid voltage clamper of described metal-oxide-semiconductor to described metal-oxide-semiconductor, and during described diode reverse conducting, the voltage difference at two ends is less than the withstand voltage between the grid of described metal-oxide-semiconductor and source electrode;
When described metal-oxide-semiconductor is N-type metal-oxide-semiconductor, the first end of described metal-oxide-semiconductor, the second end and the 3rd end are respectively the grid of described N-type metal-oxide-semiconductor, drain electrode and source electrode, the positive pole of described diode connects the source electrode of described metal-oxide-semiconductor, the negative pole of described diode connects the grid of described metal-oxide-semiconductor, the conducting when the source voltage of described MOS is greater than the grid voltage of described metal-oxide-semiconductor of described diode, by the source voltage of the grid voltage clamper of described metal-oxide-semiconductor to described metal-oxide-semiconductor.
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| CN201110335734.1A CN103094935B (en) | 2011-10-28 | 2011-10-28 | A kind of battery equalizing circuit and metal-oxide-semiconductor switching circuit |
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| CN103259298A (en) * | 2012-02-17 | 2013-08-21 | 东莞钜威新能源有限公司 | Battery equalization circuit and MOS transistor switching circuit |
| CN106450747B (en) * | 2016-10-13 | 2023-03-28 | 卓荣集成电路科技有限公司 | Radio frequency antenna circuit and pin electrostatic protection circuit thereof |
| CN108429298A (en) * | 2017-08-22 | 2018-08-21 | 索思（苏州）医疗科技有限公司 | A kind of MOS switch circuit applied on body-worn medical instrument |
| US11075661B1 (en) * | 2020-03-03 | 2021-07-27 | Psemi Corporation | Method and apparatus to optimize power clamping |
Citations (3)
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|---|---|---|---|---|
| CN1275829A (en) * | 1999-05-27 | 2000-12-06 | 洛克希德马丁公司 | Automatic battery equalizing circuit |
| CN102157972A (en) * | 2011-05-18 | 2011-08-17 | 上海恒动汽车电池有限公司 | Lithium-ion battery pack equilibrium system and equilibrium method thereof |
| CN202455096U (en) * | 2011-10-28 | 2012-09-26 | 东莞钜威新能源有限公司 | Cell equalization circuit and MOS tube switch circuit |
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| KR101220339B1 (en) * | 2007-10-16 | 2013-01-09 | 한국과학기술원 | Automatic Charge Equalization Method and Apparatus for Series Connected Battery String |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1275829A (en) * | 1999-05-27 | 2000-12-06 | 洛克希德马丁公司 | Automatic battery equalizing circuit |
| CN102157972A (en) * | 2011-05-18 | 2011-08-17 | 上海恒动汽车电池有限公司 | Lithium-ion battery pack equilibrium system and equilibrium method thereof |
| CN202455096U (en) * | 2011-10-28 | 2012-09-26 | 东莞钜威新能源有限公司 | Cell equalization circuit and MOS tube switch circuit |
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