A kind of vertical large displacement MEMS micro mirror and processing technology
Technical field
The present invention relates to a kind of vertical large displacement MEMS micro mirror and processing technology.
Background technology
Microminiaturization, high-performance, low cost is pursuing a goal of current device manufacturing in enormous quantities.Micro electro mechanical system (MEMS) technology arises at the historic moment at this moment, by the widespread use of vast manufacturing manufacturer.Use the device of micro electro mechanical system (MEMS) technology manufacturing mainly can be divided into two large classes, one is exactly simple microminiaturized traditional devices, and as the micro-optical platform, its advantage embodies a concentrated reflection of the usable range that can expand microminiaturized system; Its two uses innovation principle produces the device that classic method can't be made, as geomagnetic sensor.
The MEMS micro mirror is as the outstanding representative of MEMS (micro electro mechanical system) (MEMS), its abundant species, function admirable.Greatly developing of MEMS micro mirror also be unable to do without market certainly to the eager demand of MEMS micro mirror.Now, the application of MEMS micro mirror has micro projection scanning, the optical scanning probe in imaging of medical, the photoswitch in optical communication, Variable Optical Attenuator, micro spectrometer etc.
Wherein the drives structure of MEMS micro mirror is commonly used four large classes: static driving, Electromagnetic Drive, Piezoelectric Driving and electrothermal drive.Wherein each drives structure has the advantage of oneself, and driving voltage as driving in static is high, low in energy consumption, but corner is little, relatively is fit to Variable Optical Attenuator; The electromagnetic drive type driving voltage is low, and sweep frequency is low, and the anglec of rotation is large, is fit to micro projector; Piezoelectric driven makes the anglec of rotation of micro mirror little because the performance of making material is limited, and usable range is limited; Electrothermal drive type research the most thorough, usable range is also the most extensive, and simultaneously because its driving voltage is low, the anglec of rotation of micro mirror is large, and the characteristics that sweep frequency is low are fit on a large scale low frequency such as In vivo optical imaging and scan.
But existing MEMS micro mirror, because the structure of its actuating arm is single, make the difference in height between the little Manifold reflecting mirror body of MEMS and micro mirror frame almost nil, like this in the middle of actual application, will greatly limit the movement locus of the little Manifold reflecting mirror body of MEMS, for the MEMS micro mirror, the movement locus of mirror body diminishes, just directly mean the working effect of this type of MEMS micro mirror, and then have influence on the work efficiency of MEMS micro mirror.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of mirror body that makes with respect to the micro mirror frame, is in the position of vertical large displacement, MEMS micro mirror that can magnascope body movement locus.
Corresponding therewith, technical matters to be solved by this invention is to provide a kind of application MEMS technology, and the realization batch production is used for the vertical processing technology of displacement MEMS micro mirror greatly that processing the present invention designs.
The present invention is in order to solve the problems of the technologies described above by the following technical solutions: the present invention has designed a kind of vertical large displacement MEMS micro mirror, comprise micro mirror frame, mirror body and actuating arm, mirror body edge is connected with the micro mirror frame by actuating arm, be provided with the first electric conduction routing on actuating arm, described actuating arm comprises two straight beams and corresponding three duplicature duplicature Bimorph structural connections with it, on duplicature Bimorph structural connection, several heating resistors are set, the first electric conduction routing is connected with heating resistor; Between each root straight beam, between straight beam and micro mirror frame, all be connected by duplicature Bimorph structural connection between straight beam and mirror body edge, make the mirror body be in the position of vertical large displacement with respect to the micro mirror frame.
As a preferred technical solution of the present invention: also comprise being separately positioned on the mirror surface and the thermistor on duplicature Bimorph structural connection.
As a preferred technical solution of the present invention: described thermistor is Pt or polycrystalline silicon material.
As a preferred technical solution of the present invention: the described thermistor that is arranged on the mirror surface adopts the mode of snakelike distribution to be arranged on the mirror surface.
As a preferred technical solution of the present invention: the second electric conduction routing that is connected with described thermistor also is set on described actuating arm.
As a preferred technical solution of the present invention: described the first electric conduction routing, the second electric conduction routing are the Al material.
As a preferred technical solution of the present invention: described heating resistor is metal or polycrystalline silicon material.
As a preferred technical solution of the present invention: several heating resistors on described duplicature Bimorph structural connection by series winding or and the mode that connects interconnect.
As a preferred technical solution of the present invention: described straight beam is Al or SiO
2Material.
A kind of vertical large displacement MEMS micro mirror of the present invention adopts above technical scheme compared with prior art, has following technique effect:
(1) in the vertical large displacement MEMS micro mirror of the present invention design, the mirror body is in the position of vertical large displacement with respect to the micro mirror frame, can magnascope body movement locus, improve the service efficiency of MEMS micro mirror;
(2) in the vertical large displacement MEMS micro mirror of the present invention design, on the mirror surface, thermistor is set, can the Real-Time Monitoring mirror temperature of surface, help in the middle of actual application, the motion track of mirror body is controlled;
(3) in the vertical large displacement MEMS micro mirror of the present invention's design, on duplicature Bimorph structural connection, thermistor is set, temperature that can Real-Time Monitoring duplicature Bimorph structural connection helps in the middle of actual application, and the thermal power of heating resistor is controlled;
(4) in the vertical large displacement MEMS micro mirror of the present invention design, for heating resistor and thermistor, the first electric conduction routing is set and is connected electric conduction routing and connects respectively, can more effectively guarantee the work efficiency of each electronic devices and components;
(5) in the vertical large displacement MEMS micro mirror of the present invention's design, the first electric conduction routing and the second electric conduction routing are the Al material, heating resistor is metal or polycrystalline silicon material, thermistor is Pt or polycrystalline silicon material, can effectively guarantee like this this device stability and degree of accuracy in use.
Corresponding therewith, the present invention is in order to solve the problems of the technologies described above by the following technical solutions: the present invention has designed a kind of processing technology of vertical large displacement MEMS micro mirror, and described micro mirror adopts soi wafer, and soi wafer comprises two-layer silicon, and be layer of silicon dioxide between two-layer silicon, comprise the steps:
Step 1. pair soi wafer carries out two-sided standard cleaning;
Step 2. adopts Al to carry out graphical treatment on a wherein surface of soi wafer;
Step 3. adopts silicon dioxide to proceed graphical treatment to the machined surface on soi wafer described in step 2;
The another side of step 4. pair soi wafer carries out the silicon deep reaction ion etching;
The silicon dioxide buried regions that the machined surface of the described soi wafer of step 5. pair step 4 is exposed carries out graphical treatment;
The machined surface of the described soi wafer of step 6. pair step 3 carries out the silicon deep reaction ion etching;
The machined surface of the described soi wafer of step 7. pair step 6 carries out the silicon isotropic etching, and carries out cooling
The processing technology of a kind of vertical large displacement MEMS micro mirror of the present invention adopts above technical scheme compared with prior art, has following technique effect:
The processing technology of the vertical large displacement MEMS micro mirror of the present invention's design adopts the MEMS processing technology, has guaranteed the yield rate of product, and has realized batch production.
Description of drawings
Fig. 1 is a kind of vertical Half-edge Structure schematic diagram of displacement MEMS micro mirror greatly that the present invention designs.
Wherein, 1. micro mirror frame, 2. mirror body, 3. actuating arm, 4. straight beam, 5. duplicature Bimorph structural connection, 6. thermistor, 7. heating resistor.
Embodiment
Below in conjunction with Figure of description, the specific embodiment of the present invention is described in further detail.
As shown in Figure 1, the present invention has designed a kind of vertical large displacement MEMS micro mirror, comprise micro mirror frame 1, mirror body 2 and actuating arm 3, mirror body 2 edges are connected with micro mirror frame 1 by actuating arm 3, be provided with the first electric conduction routing on actuating arm 3, described actuating arm 3 comprises two straight beams 4 and corresponding three duplicature Bimorph structural connections 5 with it, several heating resistor 7, the first electric conduction routing is set on duplicature Bimorph structural connection 5 is connected with heating resistor 7; Between each root straight beam 4, between straight beam 4 and micro mirror frame 1, all be connected by duplicature Bimorph structural connection 5 between straight beam 4 and mirror body 2 edges, make mirror body 2 have vertical large displacement with respect to micro mirror frame 1.
In the vertical large displacement MEMS micro mirror of the present invention design, mirror body 2 is in the position of vertical large displacement with respect to micro mirror frame 1, can magnascope body 2 movement locus, improve the service efficiency of MEMS micro mirror.
As a preferred technical solution of the present invention: also comprise the thermistor 6 that is separately positioned on the upper and duplicature Bimorph structural connection 5 in mirror body 2 surfaces.
As a preferred technical solution of the present invention: described thermistor 6 is Pt or polycrystalline silicon material.
As a preferred technical solution of the present invention: the described lip-deep thermistor 6 of mirror body 2 that is arranged on adopts the mode of snakelike distributions to be arranged on mirror body 2 surfaces.
In the vertical large displacement MEMS micro mirror of the present invention design, on mirror body 2 surfaces, thermistor 6 is set, can Real-Time Monitoring mirror body the temperature on 2 surfaces, help in the middle of actual application, the motion track of mirror body 2 is controlled.
In the vertical large displacement MEMS micro mirror of the present invention's design, on duplicature Bimorph structural connection 5, thermistor 6 is set, temperature that can Real-Time Monitoring duplicature Bimorph structural connection 5 helps in the middle of actual application, and the thermal power of heating resistor 7 is controlled.
As a preferred technical solution of the present invention: the second electric conduction routing that is connected with described thermistor 6 also is set on described actuating arm 3.
In the vertical large displacement MEMS micro mirror of the present invention design, for heating resistor 7 and thermistor 6, the first electric conduction routing is set and is connected electric conduction routing and connects respectively, can more effectively guarantee the work efficiency of each electronic devices and components.
As a preferred technical solution of the present invention: described the first electric conduction routing and the second electric conduction routing are the Al material.
As a preferred technical solution of the present invention: described heating resistor 7 is metal or polycrystalline silicon material.
As a preferred technical solution of the present invention: several heating resistors 7 on described duplicature Bimorph structural connection 5 are by going here and there and the mode that connects interconnects.
As a preferred technical solution of the present invention: described straight beam 4 is Al or SiO
2Material.
In the vertical large displacement MEMS micro mirror of the present invention's design, the first electric conduction routing and the second electric conduction routing are the Al material, heating resistor 7 is metal or polycrystalline silicon material, thermistor 6 is Pt or polycrystalline silicon material, can effectively guarantee like this this device stability and degree of accuracy in use.
The present invention has also designed a kind of processing technology of vertical large displacement MEMS micro mirror, and described micro mirror adopts soi wafer, and soi wafer comprises two-layer silicon, and is layer of silicon dioxide between two-layer silicon, comprises the steps:
Step 1. pair soi wafer carries out two-sided standard cleaning;
Step 2. adopts Al to carry out graphical treatment on a wherein surface of soi wafer;
Step 3. adopts silicon dioxide to proceed graphical treatment to the machined surface on soi wafer described in step 2;
The another side of step 4. pair soi wafer carries out silicon deep reaction ion etching (DRIE);
The silicon dioxide buried regions that the machined surface of the described soi wafer of step 5. pair step 4 is exposed carries out graphical treatment;
The machined surface of the described soi wafer of step 6. pair step 3 carries out the silicon deep reaction ion etching;
The machined surface of the described soi wafer of step 7. pair step 6 carries out the silicon isotropic etching, and carries out cooling
The processing technology of the vertical large displacement MEMS micro mirror of the present invention's design adopts the MEMS processing technology, has guaranteed the yield rate of product, and has realized batch production.
the vertical large displacement MEMS micro mirror of the present invention's design is in the middle of actual application, actuating arm 3 comprises two straight beams 4 and corresponding three duplicature Bimorph structural connections 5 with it, between each root straight beam 4, between straight beam 4 and micro mirror frame 1, all be connected by duplicature Bimorph structural connection 5 between straight beam 4 and mirror body 2 edges, wherein, the length of the duplicature Bimorph structural connection 5 that is connected with mirror body 2 edges and the duplicature Bimorph structural connection 5 that is connected with micro mirror frame 1 equal in length, the length that is connected to two duplicature Bimorph structural connections 5 between straight beam 4 is 2 times of all the other two duplicature Bimorph structural connection 5 length, duplicature Bimorph structural connection 5 is formed by stacking by the material of several different expansion coefficient, be made into flat structures at the technique making temperature higher than room temperature, after cool to room temperature discharges, duplicature Bimorph structural connection 5 shrinks to the high side of coefficient of thermal expansion, make whole mirror body 2 up promote, make mirror body 2 with respect to micro mirror frame 1, be in the position of vertical large displacement, can increase the movement locus of mirror body 2, improve the work efficiency of the MEMS micro mirror of the present invention's design, wherein after being cooled to room temperature, the angle of bend of the duplicature Bimorph structural connection 5 that is connected with mirror body 2 edges and the angle of bend of the duplicature Bimorph structural connection 5 that is connected with micro mirror frame 1 equate, the angle of bend that is connected to two duplicature Bimorph structural connections 5 between straight beam 4 is 2 times of all the other two duplicature Bimorph structural connection 5 angle of bend.
The vertical large displacement MEMS micro mirror of the present invention's design is in the middle of actual application, the height of mirror body 2 is determined by the length of duplicature Bimorph structural connection 5 and the length of straight beam 4, MEMS micro mirror of the present invention in use, the flow through electric current of heating resistor 7 on duplicature Bimorph structural connection 5 of driving, make heating resistor 7 produce Joule heat, the temperature of duplicature Bimorph structural connection 5 raises with the Joule heat of heating resistor 7, make the shape of duplicature Bimorph structural connection 5 change, and then realize controlling the purpose of mirror body 2 motions.
in actual applications, the first electric conduction routing and the second electric conduction routing are the Al material, heating resistor 7 is metal or polycrystalline silicon material, thermistor 6 is Pt or polycrystalline silicon material, stability due to Pt, and has a higher temperature coefficient, so Pt is comparatively suitable thermistor material, the thermistor 6 of being made by Pt is set on mirror body 2 surfaces, and the second electric conduction routing that connects thermistor 6 adopts the Al material, temperature coefficient due to Pt is 3.9E-3 like this, the design resistance is 1K Ω (0 ℃ of@), make the temperature test precision of thermistor 6 can reach 0.1 ℃, can effectively guarantee like this this device stability and degree of accuracy in use.
The above has done detailed description to embodiments of the present invention by reference to the accompanying drawings, but the present invention is not limited to above-mentioned embodiment, in the ken that those of ordinary skills possess, can also make a variety of changes under the prerequisite that does not break away from aim of the present invention.