CN103077940A - LED (Light-Emitting Diode) array - Google Patents
LED (Light-Emitting Diode) array Download PDFInfo
- Publication number
- CN103077940A CN103077940A CN2012100305443A CN201210030544A CN103077940A CN 103077940 A CN103077940 A CN 103077940A CN 2012100305443 A CN2012100305443 A CN 2012100305443A CN 201210030544 A CN201210030544 A CN 201210030544A CN 103077940 A CN103077940 A CN 103077940A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light emitting
- electrode
- diode matrix
- matrix according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses an LED (Light-Emitting Diode) array. The LED array mainly comprises a plurality of LED units which form a series sequence. N columns and m lines of LED arrays are provided, wherein at least one of m and n is odd.
Description
Technical field
The present invention relates to a kind of light emitting diode matrix, particularly a kind of light emitting diode matrix of tandem sequence.
Background technology
Light-emitting diode (LED; Light-Emitting Diode) since possess have that the life-span is long, volume is little, power consumption reaches less the advantages such as reaction speed is fast, thereby is widely used in every products such as indicator light, advertisement plate, traffic signal light, automobile lamp, display floater, communication appliance and room lighting.
See also shown in Figure 1ly, be the organigram of existing light-emitting diode.As shown in the figure, existing light-emitting diode chip for backlight unit 100 comprises substrate 102, N-type layer 110, luminescent layer 125 and P type layer 130.In addition, the first electrode 115 and the second electrode 135 are respectively formed on N-type layer 110 and the P type layer 130, and with its electric connection.When appropriate voltage is applied to the first electrode 115 and the second electrode 135, electronics will leave N-type layer 110 and with the hole in luminescent layer 125 interior combinations and luminous.
Substrate 102 is made with sapphire usually; N-type layer 110 for example can be made by the aluminium gallium nitride alloy (AlGaN) of doped silicon or the gallium nitride (GaN) of doped silicon; P type layer 130 for example can be made by magnesium-doped aluminium gallium nitride alloy (AlGaN) or magnesium-doped gallium nitride (GaN).Luminescent layer 125 is usually by single quantum well or Multiple Quantum Well, and for example InGaN/gallium nitride forms.
Generally speaking, drive single light-emitting diode chip for backlight unit 100 and approximately need between the first electrode 115 and the second electrode 135, provide one 3 volts direct voltage, take light-emitting diode chip for backlight unit 100 as the light source of flashlight as example, can so that single light-emitting diode chip for backlight unit 100 be connected with two 1.5 volts battery, just can drive light-emitting diode chip for backlight unit 100 and produce light source.
Yet, when driving light-emitting diode chip for backlight unit 100 with domestic power supply, can face the problem of voltage transitions.At present employed domestic power supply mostly is greatly the AC power of 110 volts or 220 volts in the world, therefore when driving light-emitting diode chip for backlight unit 100 with domestic power supply, need to carry out to domestic power supply the action of step-down and rectification.
Owing to having sizable voltage difference distance between domestic power supply (110V or 220V) and the light-emitting diode chip for backlight unit 100 required driving voltages (3V), and can cause voltage transitions efficient on the low side, and then in the process of voltage transitions, cause the excess loss of energy.
Summary of the invention
A purpose of the present invention, be to provide a kind of light emitting diode matrix, it is main so that a plurality of light emitting diodes form a series connection sequence, by increasing the quantity of light emitting diode series connection, can improve the needed driving voltage of light emitting diode matrix, the energy loss that in the process of voltage transitions, is caused to reduce external voltage.
Another object of the present invention, be to provide a kind of light emitting diode matrix, mainly a plurality of light emitting diodes are arranged as light emitting diode matrix, this light emitting diode matrix has n row (row) and m capable (column), and m and n at least one are odd number, be conducive to by this array that is arranged in a plurality of light emitting diodes, and can be so that current input terminal and current output terminal be positioned at edge or the corner of light emitting diode matrix, and be conducive to carry out power supply unit and light emitting diode matrix between be electrically connected.
Another object of the present invention, be to provide a kind of light emitting diode matrix, main so that a plurality of light emitting diodes form a series connection sequence, be conducive to by this drive light emitting diode matrix with general domestic power supply, so that light emitting diode matrix becomes general fixed lighting source.
Another object of the present invention, be to provide a kind of light emitting diode matrix, for example quadrangle, approximate parallelogram, approximate rectangular, approximate square, near-rhombic ... Deng light emitting diode be arranged in array, and be to angular dependence with the positive and negative electrode general arrangement, with the uniformity (uniform current spreading) that improves CURRENT DISTRIBUTION between two electrodes, and increase the uniformity of the light source that light emitting diode produces.
For achieving the above object, the invention provides a kind of light emitting diode matrix, include a plurality of light emitting diodes, all this a plurality of light emitting diodes form series connection sequences, this light emitting diode matrix has n row and m capable, and m and n at least one be odd number.
One embodiment of above-mentioned light emitting diode matrix, wherein each light emitting diode is quadrangle, and have electrically opposite one first electrode and one second electrode, this first electrode is positioned at or contiguous this tetragonal one first end points, this second electrode is positioned at or contiguous this tetragonal one second end points, and this first end points and this second end points are to angular dependence.
One embodiment of above-mentioned light emitting diode matrix, wherein each light emitting diode is square, and have electrically opposite one first electrode and one second electrode, this first electrode is positioned at or contiguous this foursquare one first end points, this second electrode is positioned at or contiguous this foursquare one second end points, and this first end points and this second end points are to angular dependence.
One embodiment of above-mentioned light emitting diode matrix, wherein this light emitting diode matrix is quadrangle, and connects a current input terminal and a current output terminal.
One embodiment of above-mentioned light emitting diode matrix, wherein this light emitting diode matrix is square, and connects a current input terminal and a current output terminal.
One embodiment of above-mentioned light emitting diode matrix, wherein first light emitting diode of this tandem sequence connects this current input terminal with this second electrode, and last light emitting diode of this tandem sequence connects this current output terminal with this first electrode.
One embodiment of above-mentioned light emitting diode matrix, wherein one is odd number among m and the n, one is even number, this current input terminal and this current output terminal is positioned at or a sideline of contiguous this light emitting diode matrix on.
One embodiment of above-mentioned light emitting diode matrix, wherein m and n are odd number, this current input terminal and this current output terminal is positioned at or the diagonal position of contiguous this light emitting diode matrix.
One embodiment of above-mentioned light emitting diode matrix, wherein the electrode position pattern of first light emitting diode in this tandem sequence is identical with the 3rd light emitting diode.
One embodiment of above-mentioned light emitting diode matrix, wherein the electrode position pattern clockwise 90-degree rotation of first light emitting diode in this tandem sequence can be same as second light emitting diode, and the electrode position pattern inverse clock 90-degree rotation of second light emitting diode can be same as the 3rd light emitting diode.
One embodiment of above-mentioned light emitting diode matrix wherein includes a substrate, and these a plurality of light emitting diodes are arranged on this substrate.
One embodiment of above-mentioned light emitting diode matrix wherein includes a plurality of bonding wires to connect light emitting diode adjacent in this tandem sequence.
One embodiment of above-mentioned light emitting diode matrix wherein includes a plurality of intraconnections to connect light emitting diode adjacent in this tandem sequence.
One embodiment of above-mentioned light emitting diode matrix, wherein this intraconnections along the shortest path of adjacent light emitting diode to connect the electrode of adjacent light emitting diode.
One embodiment of above-mentioned light emitting diode matrix, wherein this light emitting diode is that stacking a plurality of light-emitting diode forms.
One embodiment of above-mentioned light emitting diode matrix, wherein stacking a plurality of light-emitting diode is vertical series connection.
One embodiment of above-mentioned light emitting diode matrix, comprising electrically opposite one first electrode and one second electrode arranged, wherein this first electrode is positioned at the light-emitting diode near this substrate, and this second electrode then is positioned at the light-emitting diode away from this substrate.
One embodiment of above-mentioned light emitting diode matrix, wherein stacking a plurality of light-emitting diode is vertical in parallel.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the organigram of existing light-emitting diode;
Fig. 2 is the schematic perspective view of light emitting diode matrix one actual example of the present invention;
Fig. 3 is the vertical view of light emitting diode matrix one actual example of the present invention;
Fig. 4 is the vertical view of the another embodiment of light emitting diode matrix of the present invention;
Fig. 5 is the vertical view of the another embodiment of light emitting diode matrix of the present invention;
Fig. 6 is the vertical view of the another embodiment of light emitting diode matrix of the present invention; And
Fig. 7 is the cross-sectional schematic of the another embodiment of light emitting diode in the light emitting diode matrix of the present invention.
Wherein, Reference numeral
102 substrates of 100 light-emitting diode chip for backlight unit
110N type layer 115 first electrode
125 luminescent layer 130P type layers
135 second electrodes
20 light emitting diodes, 200 light emitting diode matrixs
201 first light emitting diodes
202 second light emitting diodes
203 the 3rd light emitting diodes
204 the 4th light emitting diodes
209 last light emitting diode
21 first material layers
211 first N type semiconductor material layers
213 second N type semiconductor material layers
22 bonding wires, 23 second material layers
231 first P type semiconductor material layers
233 second P type semiconductor material layers
251 current output terminals 26 are worn the tunnel junction
27 second electrodes, 271 current input terminals
281 first active layers, 283 second active layers
29 power supply units
300 light emitting diode matrixs, 32 intraconnections
34 substrates, 351 current output terminals
36 gaps, 371 current input terminals
400 light emitting diode matrixs, 451 current output terminals
471 current input terminals
500 light emitting diode matrixs, 551 current output terminals
571 current input terminals
Embodiment
Below in conjunction with accompanying drawing structural principle of the present invention and operation principle are done concrete description:
See also Fig. 2 and shown in Figure 3, show schematic perspective view and the vertical view of a light emitting diode matrix among the part embodiment of the present invention.As shown in the figure, light emitting diode matrix 200 of the present invention mainly includes a plurality of light emitting diodes 20, wherein each light emitting diode 20 forms a series connection sequence, in use can single power supply unit 29 drive simultaneously the light emitting diode 20 of a plurality of series connection.
The present invention mainly is arranged in a plurality of light emitting diodes 20 on the substrate 24 in matrix (array) mode, and each light emitting diode 20 is by gap 36 isolation, wherein light emitting diode matrix 200 has n row (row) and m capable (column), and m and n at least one be odd number.In an example, light emitting diode matrix 200 has 2 row, 3 row.
Among the part embodiment of the present invention, each light emitting diode 20 includes one first material layer 21, one second material layer 23, at least one the first electrode 25 and at least one the second electrode 27, wherein the first material layer 21 and the second material layer 23 arrange in stacked mode, and the second material layer 23 is arranged at the part surface of the first material layer 21.The first electrode 25 is arranged at the part surface of the first material layer 21, and does not contact with the second material layer 23,27 part surfaces that are arranged at the second material layer 23 of the second electrode.In use can be to the first electrode 25 and the second electrode 27 supply powers, so that light emitting diode 20 produces light source.In different embodiment, light emitting diode 20 of the present invention also can be stacking a plurality of light-emitting diodes (Stacking LEDs), and this structure will illustrate in follow-up embodiment.
Among the part embodiment of the present invention, each light emitting diode 20 can be quadrangle, approximate parallelogram for example, approximate rectangular, approximate square, near-rhombic ... etc., the first electrode 25 and the second electrode 27 electrically opposite, and the first electrode 25 is positioned at or contiguous tetragonal one first end points, the second electrode 27 is positioned at or contiguous tetragonal one second end points, the first end points and the second end points are roughly angular dependence (in a diagonal position), with the uniformity (uniform current spreading) that improves CURRENT DISTRIBUTION between two electrodes, and be conducive to improve the Luminescence Uniformity of each light emitting diode 20.In addition, be to angular dependence with the first electrode 25 and the second electrode 27 general arrangement of each light emitting diode 20, more be conducive to carry out the electric connection of adjacent light emitting diode 20.
Can form difform light emitting diode matrix 200 by arranging above-mentioned difform light emitting diode 20, for example: quadrangle, approximate parallelogram, approximate rectangular, approximate square, near-rhombic ... Deng.
See also shown in Figure 3, among the part embodiment of the present invention, before light emitting diode 20 is arranged as light emitting diode matrix 200, need to give special heed to the comparative electrode position of each light emitting diode 20, carry out again the setting of each light emitting diode 20, for example the electrode position pattern clockwise 90-degree rotation of first light emitting diode 201 in the tandem sequence can be same as second light emitting diode 202, and the electrode position pattern inverse clock 90-degree rotation of second light emitting diode 202 can be same as the 3rd light emitting diode 203; The electrode position pattern that is to say first light emitting diode 201 is identical with the 3rd light emitting diode 203.This design is used the shortest bonding wire 22 or intraconnections 32 so that the different electrically electrodes of adjacent light emitting diode have beeline so that the series connection of adjacent light-emitting diode is electrically connected, and reduces by this resistance and reduces cost.For example the second electrode 27 of the first electrode 25 of first light emitting diode 201 and second light emitting diode 202 is adjacent, and the first electrode 25 of second light emitting diode 202 then the second electrode 27 with the 3rd light emitting diode 203 is adjacent.
As previously mentioned, at least one must be odd number for m in the light emitting diode matrix 200 provided by the present invention and n, this design so that light emitting diode in inter-bank series connection or when striding the row series connection, still the different electrically electrodes of keeping adjacent light emitting diode 20 have beeline, use the shortest bonding wire 22 or intraconnections 32 so that the series connection of adjacent light-emitting diode 20 is electrically connected, reduce by this resistance and reduce cost.For example shown in Figure 3, the first electrode 25 of the 3rd light emitting diode 203 is adjacent with the second electrode 27 of the 4th light emitting diode 204.
See also Fig. 2 and shown in Figure 3, bonding wire (wire bonding) 22 can be in order to connect light emitting diode adjacent in the serial sequence 20, usually is applicable to the larger situation in gap 36; See also shown in Figure 4ly, intraconnections (interconnect) 32 can be in order to connect light emitting diode adjacent in the serial sequence 20, usually is applicable to the less situation in gap 36.
The common methods that forms led array by intraconnections is as follows, can be at insulation or a high resistance substrate 34, for example on sapphire, carborundum or other III-nitride substrates, the many light emitting diodes 20 of serial or parallel connection are to form a light emitting diode matrix 300.Each light emitting diode 20 is isolated by gap 36, and connects the electrode of different light emitting diodes 20 with intraconnections (internnect) 32.Generally speaking, in order to ensure being insulation between each light emitting diode 20, can deposit first oxidation material, for example Si oxide, silicon nitride, silicon nitrogen oxide, aluminium oxide, insulating material deposits intraconnections 32 again on light emitting diode matrix 300, and intraconnections 32 is generally metal material.
Among the part embodiment of the present invention, light emitting diode matrix 200 includes a current input terminal 271 and a current output terminal 251, power supply unit 29 can be connected with current input terminal 271 and the current output terminal 251 of light emitting diode matrix 200 in use, and to each light emitting diode 20 supply powers.See also Fig. 3 and shown in Figure 4, approximate square or approximate rectangular light emitting diode 20 can be arranged as approximate square or approximate rectangular light emitting diode matrix 200, and current input terminal 271 is positioned at current output terminal 251 or the sideline of contiguous quadrangle or approximate foursquare light emitting diode matrix 200 on or diagonal position.For example first light emitting diode 201 of tandem sequence connects this current input terminal 271 with the second electrode 27, and last light emitting diode 209 of tandem sequence connects current output terminal 251 with the first electrode 25.
Among the part embodiment of the present invention, series connection by a plurality of light emitting diodes 20, can improve and drive light emitting diode matrix 200 needed voltages, so that power supply unit 29 does not need to carry out significantly voltage transitions, just can drive light emitting diode matrix 200, by this energy loss to be caused in the process that is reduced in voltage transitions.For example the light emitting diode matrix 200 of Fig. 3 includes the series connection of six light emitting diodes 20, and each light emitting diode 20 needed driving voltages are about 3 volts, in other words, light emitting diode matrix 200 needed driving voltages are about 18 volts (3 volts multiply by 6), then 29 of power supply units need general domestic power supply (110 volts or 220 volts) is converted to 18 volts, just can be in order to drive light emitting diode matrix 200.
In the present embodiment, mainly including six light emitting diodes 20 with light emitting diode matrix 200 describes, yet also can increase the series connection number of light emitting diode 20 when practical application, this part will describe in follow-up embodiment.By increasing the quantity of light emitting diode 20 series connection, will can further improve the needed driving voltage of light emitting diode matrix, and increase light-emitting area and the luminosity of light emitting diode matrix.
In addition, light emitting diode matrix 200 of the present invention includes a plurality of identical light emitting diodes 20, and can be in order to produce the light source of same color.In part embodiment of the present invention, light emitting diode matrix 200 also can include a plurality of different light emitting diodes 20, and can be in order to produce the light source of different colours, for example ruddiness, green glow or blue light.
See also shown in Figure 4ly, be the vertical view of the another embodiment of light emitting diode matrix of the present invention.As shown in the figure, light emitting diode matrix 300 of the present invention mainly includes a plurality of light emitting diodes 20, and wherein each light emitting diode 20 is arranged on the substrate 34 with matrix-style, and forms the light emitting diode matrix 300 of one 3 row, 3 row.
The light emitting diode 20 of light emitting diode matrix 300 connects in the mode of series connection, for example can pass through intraconnections (interconnect) 32 and connect adjacent light emitting diode 20 in the tandem sequence, when practical application, light emitting diode 20 is carried out suitable arrangement, so that intraconnections 32 connects the electrode of adjacent light emitting diode 20 along the shortest path of adjacent light emitting diode.Coupled the first electrode 25 of intraconnections 32, the size of the second electrode 27 can be dwindled, and to reduce the electrode shading-area, carry out outside electric connection but current input terminal 371 and current output terminal 351 can keep larger area.By the series connection of nine light emitting diodes 20, light emitting diode matrix 300 required driving voltages can be increased to approximately 27 volts, with the energy loss that is caused in the process that further is reduced in voltage transitions.
Certainly, also can further increase the quantity of the light emitting diode 20 of series connection, for example the mode of 15 light emitting diodes 20 with series connection can be connected, and be arranged as into the light emitting diode matrix 400 of one 5 row, 3 row, wherein light emitting diode matrix 400 required driving voltages are about 45 volts, as shown in Figure 5, or with 25 light emitting diodes 20 with the series connection mode connect, and be arranged as into the light emitting diode matrix 500 of one 5 row, 5 row, wherein light emitting diode matrix 500 required driving voltages are about 75 volts, as shown in Figure 6.
In part embodiment of the present invention, each light emitting diode 20 approximate square, when the m of light emitting diode matrix 200 equaled n, the outward appearance of light emitting diode matrix 200 can be similar to square; And when the m of light emitting diode matrix 200 was not equal to n, the outward appearance of light emitting diode matrix 200 then can be approximate rectangular.
In part embodiment of the present invention, when the m of the capable light emitting diode matrix 200 of n row m and n among both one be odd number, when one was even number, as shown in Figure 3, current input terminal 271 and current output terminal 251 were positioned at or are close on the sideline of this light emitting diode matrix 200.When the m of the capable light emitting diode matrix 300/400/500 of n row m and n are odd number, such as Fig. 4, Fig. 5 and then current input terminal 371/471/571 shown in Figure 6 and current output terminal 351/451/551 is positioned at or the diagonal position of contiguous light emitting diode matrix 300/400/500.So that light emitting diode matrix 300/400/500 is applicable to general conduction rack commonly used, and be electrically connected with it.
In part embodiment of the present invention, above-mentioned light emitting diode 20 also can be stacking a plurality of light-emitting diodes (Stacking LEDs), wherein a plurality of light-emitting diodes carry out stacking (vertically series connection or vertical in parallel) in vertical mode, and the first electrode 25 of light emitting diode 20 is positioned at the light-emitting diode near substrate, the second electrode 27 then is positioned at the light-emitting diode away from substrate, as shown in Figure 7.
Certainly; the present invention also can have other various embodiments; in the situation that do not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (18)
1. a light emitting diode matrix includes a plurality of light emitting diodes, and all this a plurality of light emitting diodes form series connection sequences, and this light emitting diode matrix has n row and m capable, and m and n at least one be odd number.
2. light emitting diode matrix according to claim 1, it is characterized in that, each light emitting diode is quadrangle, and have electrically opposite one first electrode and one second electrode, this first electrode is positioned at or contiguous this tetragonal one first end points, this second electrode is positioned at or contiguous this tetragonal one second end points, and this first end points and this second end points are to angular dependence.
3. light emitting diode matrix according to claim 2, it is characterized in that, each light emitting diode square, and have electrically opposite one first electrode and one second electrode, this first electrode is positioned at or contiguous this foursquare one first end points, this second electrode is positioned at or contiguous this foursquare one second end points, and this first end points and this second end points are to angular dependence.
4. light emitting diode matrix according to claim 2 is characterized in that, this light emitting diode matrix is quadrangle, and connects a current input terminal and a current output terminal.
5. light emitting diode matrix according to claim 4 is characterized in that, this light emitting diode matrix square, and connect a current input terminal and a current output terminal.
6. light emitting diode matrix according to claim 4, it is characterized in that, first light emitting diode of this tandem sequence connects this current input terminal with this second electrode, and last light emitting diode of this tandem sequence connects this current output terminal with this first electrode.
7. light emitting diode matrix according to claim 4 is characterized in that, one is odd number among m and the n, and one is even number, this current input terminal and this current output terminal is positioned at or a sideline of contiguous this light emitting diode matrix on.
8. light emitting diode matrix according to claim 4 is characterized in that, m and n are odd number, this current input terminal and this current output terminal is positioned at or the diagonal position of contiguous this light emitting diode matrix.
9. light emitting diode matrix according to claim 4 is characterized in that, the electrode position pattern of first light emitting diode in this tandem sequence is identical with the 3rd light emitting diode.
10. light emitting diode matrix according to claim 9, it is characterized in that, the electrode position pattern clockwise 90-degree rotation of first light emitting diode in this tandem sequence can be same as second light emitting diode, and the electrode position pattern inverse clock 90-degree rotation of second light emitting diode can be same as the 3rd light emitting diode.
11. light emitting diode matrix according to claim 1 is characterized in that, includes a substrate, and these a plurality of light emitting diodes are arranged on this substrate.
12. light emitting diode matrix according to claim 11 is characterized in that, includes a plurality of bonding wires to connect light emitting diode adjacent in this tandem sequence.
13. light emitting diode matrix according to claim 11 is characterized in that, includes a plurality of intraconnections to connect light emitting diode adjacent in this tandem sequence.
14. light emitting diode matrix according to claim 13 is characterized in that, this intraconnections along the shortest path of adjacent light emitting diode to connect the electrode of adjacent light emitting diode.
15. light emitting diode matrix according to claim 11 is characterized in that, this light emitting diode is that stacking a plurality of light-emitting diode forms.
16. light emitting diode matrix according to claim 15 is characterized in that, stacking a plurality of light-emitting diodes are vertical series connection.
17. light emitting diode matrix according to claim 16, it is characterized in that, include electrically opposite one first electrode and one second electrode, wherein this first electrode is positioned at the light-emitting diode near this substrate, and this second electrode then is positioned at the light-emitting diode away from this substrate.
18. light emitting diode matrix according to claim 15 is characterized in that, stacking a plurality of light-emitting diodes are vertical in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100305443A CN103077940A (en) | 2011-10-26 | 2012-02-07 | LED (Light-Emitting Diode) array |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110335039.5 | 2011-10-26 | ||
| CN2011103350395A CN102403331A (en) | 2011-10-26 | 2011-10-26 | Light-emitting diode array |
| CN2012100305443A CN103077940A (en) | 2011-10-26 | 2012-02-07 | LED (Light-Emitting Diode) array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103077940A true CN103077940A (en) | 2013-05-01 |
Family
ID=45885368
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103350395A Pending CN102403331A (en) | 2011-10-26 | 2011-10-26 | Light-emitting diode array |
| CN2012100305443A Pending CN103077940A (en) | 2011-10-26 | 2012-02-07 | LED (Light-Emitting Diode) array |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103350395A Pending CN102403331A (en) | 2011-10-26 | 2011-10-26 | Light-emitting diode array |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN102403331A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110108862A1 (en) * | 2010-06-04 | 2011-05-12 | Ray-Hua Horng | Light-emitting-diode array and method for manufacturing the same |
| CN102169933A (en) * | 2010-02-19 | 2011-08-31 | 三星Led株式会社 | Semiconductor light emitting device having multi-cell attray, light emitting module, and illumination apparatus |
| CN202434517U (en) * | 2011-10-26 | 2012-09-12 | 华夏光股份有限公司 | Light emitting diode array |
-
2011
- 2011-10-26 CN CN2011103350395A patent/CN102403331A/en active Pending
-
2012
- 2012-02-07 CN CN2012100305443A patent/CN103077940A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169933A (en) * | 2010-02-19 | 2011-08-31 | 三星Led株式会社 | Semiconductor light emitting device having multi-cell attray, light emitting module, and illumination apparatus |
| US20110108862A1 (en) * | 2010-06-04 | 2011-05-12 | Ray-Hua Horng | Light-emitting-diode array and method for manufacturing the same |
| CN202434517U (en) * | 2011-10-26 | 2012-09-12 | 华夏光股份有限公司 | Light emitting diode array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102403331A (en) | 2012-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101239853B1 (en) | Ac light emitting diode | |
| KR102007405B1 (en) | Light emitting module | |
| CN101740557B (en) | Vertical-type alternative-current light emitting diode | |
| CN1706043A (en) | LED light engine for AC operation and methods of fabricating same | |
| CN101839403A (en) | AC-driven light emitting device | |
| TW200739942A (en) | White semiconductor light emitting element and manufacturing method thereof | |
| KR20130045793A (en) | A light emitting diode array | |
| CN102263120A (en) | Semiconductor light-emitting element, light-emitting device, luminaire, display unit, traffic signal lamp unit, and traffic information display unit | |
| US20120049204A1 (en) | Led module | |
| CN110690328B (en) | No-electrical contact mu LED light-emitting device based on wavelength down-conversion | |
| CN110556459B (en) | Color mu LED light-emitting display device | |
| CN102315240A (en) | High-voltage nitride LED (Light-Emitting Diode) circuit and corresponding high-voltage nitride LED device | |
| CN202434517U (en) | Light emitting diode array | |
| KR101195336B1 (en) | Light emitting device | |
| CN109411578A (en) | A kind of LED chip and LED module | |
| CN105742418A (en) | Light-emitting diode chip and preparation method thereof | |
| CN103077940A (en) | LED (Light-Emitting Diode) array | |
| CN113498554A (en) | Light emitting panel, circuit board, and display device | |
| CN203503683U (en) | LED (light-emitting diode) chip with multiple light-emitting areas | |
| CN1527410A (en) | Mixed-color LED | |
| CN210668407U (en) | High-voltage LED chip | |
| CN210136890U (en) | Single crystal and polycrystal sharing type lead frame and light emitting device thereof | |
| CN109473446B (en) | Light-emitting diode micro-device and display panel | |
| CN102201427B (en) | Light emitting element | |
| CN103474446A (en) | Light emitting diode array structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130501 |