CN103076715B - The monitoring method of mask plate, exposure sources pinpointed focus - Google Patents
The monitoring method of mask plate, exposure sources pinpointed focus Download PDFInfo
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- CN103076715B CN103076715B CN201210556659.6A CN201210556659A CN103076715B CN 103076715 B CN103076715 B CN 103076715B CN 201210556659 A CN201210556659 A CN 201210556659A CN 103076715 B CN103076715 B CN 103076715B
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Abstract
A kind of monitoring method of mask plate, pinpointed focus, wherein, the mask plate includes：Substrate；Monitoring pattern on substrate, the monitoring pattern includes the rectangular preiection portion of square body and the four the week side of boss walls positioned at square body, and the rectangular preiection portion is some parallel gratings strips.When carrying out the monitoring of pinpointed focus using the mask plate, the precision of monitoring is improved.
Description
Technical field
The present invention relates to field of semiconductor fabrication, more particularly to a kind of mask plate, the monitoring side of exposure sources pinpointed focus
Method.
Background technology
In the manufacture craft of semiconductor integrated circuit, by the exposure sources of photoetching process by the layout patterns on mask plate
It is transferred in the photoresist layer of Semiconductor substrate, forms photoetching offset plate figure；Then, using the photoresist layer as mask layer, half-and-half
Conductor substrate performs follow-up etching or ion implantation technology.
In a lithographic process, the characteristic size of photoetching offset plate figure and its side wall profile can be exposed equipment exposing condition
Influence.And the characteristic size and profile of photoetching offset plate figure can directly affect follow-up etching or ion implantation technology, thus,
The monitoring of exposure sources exposing condition is particularly important.
Operationally, the light that exposure light source is sent is projeced into semiconductor integrated circuit device exposure sources after collimation
On the mask plate of a certain layer territory pattern of part, through after the mask plate, by imaging system, the light of Semiconductor substrate is projected
On photoresist layer, make photoresist layer photosensitive, then photoresist layer is developed, form photoetching offset plate figure, during exposure,
The focus condition of exposure sources and the difference of exposure energy, the characteristic size of the photoetching offset plate figure obtained also can be different.
The optimal focal plane of usual exposure machine can be shifted due to vibration or other reasonses so that semiconductor devices
Characteristic size changes.In order to stabilizing device critical size, it is necessary to be periodically monitored to the focus condition of exposure machine, and
It is adjusted according to the result of monitoring.
Although existing Partial exposure board has the function of monitoring pinpointed focus, it can not accurately react exposure
The change of the characteristic size of the product of ray machine platform production, is unfavorable for producing the monitoring of the characteristic size of product.
There are more monitoring methods on focal length in Publication No. CN1412620A Chinese patent application.
The content of the invention
The problem of present invention is solved is the stability and accuracy for the monitoring for improving exposure sources pinpointed focus.
To solve the above problems, technical solution of the present invention provides a kind of mask plate, including：Substrate；On substrate
Monitoring pattern, the monitoring pattern includes square body and the rectangular preiection portion positioned at four the week side of boss walls of square body, institute
Lug boss is stated for some parallel gratings strips.
Optionally, the length in rectangular preiection portion is equal to the length of side of square body, the spacing of adjacent gratings bar for 0.05 ~
0.15 micron.
Optionally, the ratio between the length of the lug boss and width 1:2~8:1.
Optionally, the number of the monitoring pattern is more than or equal to 1, and the size of each monitoring pattern is identical.
Optionally, the number of the monitoring pattern is 9, and monitoring pattern is arranged in nine grids.
Technical solution of the present invention additionally provides a kind of monitoring method of exposure sources pinpointed focus, including：
Mask plate with monitoring pattern is provided；There is provided and be formed with photoresist on wafer to be exposed, the wafer to be exposed
Layer；Treat before exposed wafer is exposed, exposure sources are calibrated automatically, obtain exposure sources first is optimal burnt
Away from；The wafer to be exposed is exposed to form several exposure regions with different focal lengths, by the monitoring pattern on mask plate
Each exposure region is transferred to, corresponding photoetching offset plate figure is formed in each exposure region；Measure photoetching in each exposure region
The characteristic size of glue pattern, obtains characteristic size maximum, when exposure region corresponding to characteristic size maximum is exposed
Focal length is used as the second pinpointed focus；The difference of the first pinpointed focus and the second pinpointed focus is obtained, the difference is used as focal length
Deviant, if the deviant of focal length is disposed offset from the range of the baseline threshold of value, exposure sources focusing stabilizer, if it is not, then
The focusing of exposure sources is unstable.
Optionally, the baseline threshold scope of the deviant is：The a reference value of deviant-（0.5~2）The base of × deviant
The a reference value of quasi- value ~ deviant+（0.5~2）The a reference value of × deviant.
Optionally, it is described when being exposed to form several exposure regions to the wafer to be exposed with different focal lengths, institute
Focal length is stated gradually to increase.
Optionally, the gradually increase of the focal length equally.
Optionally, when the quantity of the monitoring pattern in mask plate is more than 1, formed in corresponding each exposure region
When the quantity of photoetching offset plate figure is more than 1, the characteristic size maximum is：Measure the same position correspondence of each exposure region
Photoetching offset plate figure characteristic size, the maximum in characteristic size is characterized dimensional maximums.
Optionally, when the quantity of the monitoring pattern in mask plate is more than 1, formed in corresponding each exposure region
The quantity of photoetching offset plate figure is more than 1, and the characteristic size maximum is：Measure all photoetching offset plate figures in each exposure region
Characteristic size, the maximum obtained in the average value of the characteristic size of photoetching offset plate figure in each exposure region, average value is
Characteristic size maximum.
Compared with prior art, technical solution of the present invention has advantages below：
The mask plate of the present invention, the boss is in four the week side of boss walls of square body, the length in rectangular preiection portion etc.
In the length of side of square body, the rectangular preiection portion is constituted for some parallel gratings strips, due to the presence in rectangular preiection portion,
So that four angles of monitoring pattern are caved in, the two adjacent sides in rectangular preiection portion will not directly be contacted, when the light of exposure light source
When being radiated on mask plate, reduce influencing each other between the light through the two adjacent sides in rectangular preiection portion, when by mask
Monitoring pattern on plate is transferred in the photoresist layer on wafer to be exposed, when forming photoetching offset plate figure, improves photoresist figure
Shape relative to the focal length variations of exposure sources susceptibility so that formed photoresist characteristic size have higher essence
Degree, is conducive to the monitoring of pinpointed focus
Further, the ratio between the length in the rectangular preiection portion and width 1:2~8:1, two sides in two adjacent rectangular preiection portions
Between spacing it is optimal, the light effect of influencing each other through the two adjacent sides in rectangular preiection portion is minimum, the light being correspondingly formed
The pattern uniformity of the side wall of photoresist figure preferably, makes the feature size resolution of the photoetching offset plate figure of measurement higher.
Brief description of the drawings
Fig. 1 is the structural representation of mask plate of the embodiment of the present invention；
Fig. 2 is the monitoring method schematic flow sheet of exposure sources pinpointed focus of the embodiment of the present invention；
Fig. 3 ~ Fig. 6 is the structural representation of the monitoring process of exposure sources pinpointed focus of the embodiment of the present invention.
Embodiment
Existing exposure sources are by the pinpointed focuses of automatic calibration function although obtainable exposure sources, but automatic
During calibration, due to the influence of board with the various disturbance factors such as the external world in itself, the pinpointed focus of acquisition is inaccurate, with described
When pinpointed focus is exposed to the photoresist layer of product so that the characteristic size of the photoetching offset plate figure formed on product becomes
Change, be unfavorable for the monitoring of the pinpointed focus of exposure bench and the characteristic size of product.
To solve the above problems, the embodiment of the present invention proposes a kind of mask plate first, Fig. 1, the mask plate 104 refer to
Including：Substrate 100；Monitoring pattern 101 on substrate 100, the monitoring pattern 101 includes square body 103 and position
In the rectangular preiection portion 102 of four the week side of boss walls of square body 103.
The lug boss 102 is located at four the week side of boss walls of square body 103, and the length b in rectangular preiection portion 102 is equal to pros
The length of side of shape body 103, the rectangular preiection portion 102 is that some parallel gratings strips 104 are constituted, due to rectangular preiection portion 102
Presence so that four angles of the figure of monitoring pattern 101 are caved in, and the adjacent two sides d in rectangular preiection portion 102 will not directly connect
Touch, when the light irradiation of exposure light source is on mask plate 104, reduce the light through adjacent two side in rectangular preiection portion 102
Between influence each other, and because rectangular preiection portion 102 is made up of some parallel gratings strips 104, adjacent gratings bar 104 it
Between spacing be 0.05 ~ 0.15 micron, gratings strips 104 width of itself is equal to or less than the width of spacing, the light of exposure light source
When being radiated at rectangular preiection portion 102, the focal length minor variations of exposure sources shift the monitoring pattern 101 caused on mask plate
In photoresist layer on to wafer to be exposed, when forming the obvious change of photoetching offset plate figure marginal dimension, photoetching is improved
Glue pattern relative to the focal length variations of exposure sources susceptibility so that formed photoresist characteristic size have it is higher
Precision, be conducive to the monitoring of pinpointed focus.
The ratio between length b and width c in the rectangular preiection portion 102 1:2~8:1, the both sides in two adjacent rectangular preiection portions 102
Spacing between side is optimal, and the light effect of influencing each other through two sides on adjacent rectangle lug boss 102 is minimum, is correspondingly formed
Photoetching offset plate figure side wall pattern uniformity preferably, make the feature size resolution of the photoetching offset plate figure of measurement higher.
The number of monitoring pattern 101 on the substrate 100 is more than or equal to 1, and the size of each monitoring pattern is identical, this
The number of the monitoring pattern of substrate 100 described in embodiment 101 is 9, and monitoring pattern is arranged in nine grids, when being monitored,
So that the photoetching offset plate figure formed in each exposure region on wafer to be exposed is multiple, it is easy to monitor each exposure region
The situation of focal length and the uniformity of exposure energy.
The substrate 100 is transparent material, and the substrate 100 can be quartz base plate.
The monitoring pattern 101 can be included positioned at the phase shift film patterned layer on the surface of substrate 100 and positioned at phase shift film figure
The photomask patterned layer of layer surface；The monitoring pattern 101 can also only include phase shift film patterned layer or photomask patterned layer its
In one layer.
The phase shift film patterned layer is the MoSiN films that light transmittance is 5% ~ 10%, and the photomask patterned layer is chromium film.
In a specific embodiment, the forming process of the monitoring pattern 101 is：The shape successively on the substrate 100
Into phase shift film layer and the light-shielding film layer positioned at phase shift film surface；Patterned photoresist layer is formed on the light-shielding film layer；
Using the patterned photoresist layer as mask, the light-shielding film layer and phase shift film layer are sequentially etched, phase shift film patterned layer is formed
With the photomask patterned layer positioned at phase shift film pattern layer surface, the phase shift film patterned layer and photomask patterned layer constitute monitoring figure
Shape 101.
The embodiment of the present invention additionally provides the monitoring method that a kind of use aforementioned mask plate is exposed equipment pinpointed focus,
Fig. 2 is refer to, including：
There is provided the mask plate with monitoring pattern by step S201；
Step S202 is formed with photoresist layer there is provided wafer to be exposed on the wafer to be exposed；
Step S203, treats before exposed wafer is exposed, exposure sources is calibrated automatically, exposure sources are obtained
The first pinpointed focus；
Step S204, is exposed to form several exposure regions, by mask with different focal lengths to the wafer to be exposed
Monitoring pattern on plate is transferred to each exposure region, and corresponding photoetching offset plate figure is formed in each exposure region；
Step S205, measures the characteristic size of photoetching offset plate figure in each exposure region, obtains characteristic size maximum, right
Focal length when the corresponding exposure region of characteristic size maximum is exposed is as the second pinpointed focus；
Step S206, obtains the difference of the first pinpointed focus and the second pinpointed focus, the difference as focal length skew
Value, if the deviant of focal length is disposed offset from the range of the baseline threshold of value, exposure sources focusing stabilizer, if it is not, then exposing
The focusing of equipment is unstable.
The monitoring method of above-mentioned exposure sources pinpointed focus is described in detail below in conjunction with accompanying drawing.
First, refer to Fig. 1, there is provided the mask plate 104 with monitoring pattern 101.
Then, Fig. 2 is refer to there is provided wafer 300 to be exposed, and the exposed wafer 300 has several exposure regions 301,
Photoresist layer is formed with the wafer to be exposed 300（Not shown in figure）.
The wafer to be exposed 300 is wafer nude film（bare wafer）Or it is formed with other structures or device
Wafer.
Photoresist layer, the photoresist that the model of the photoresist is used with online product are formed with wafer 300 to be exposed
Model is identical, and the monitoring pattern 101 on mask plate is transferred in photoresist layer subsequently through exposed and developed technique.
The process of photoresist layer formation is：First, treat exposed wafer to be cleaned and be dehydrated, then certain
At a temperature of HMDS is carried out to the wafer to be exposed（HMDS）Processing, changes the parent of the crystal column surface to be exposed
Water state, to increase the photoresist of follow-up spin coating and the adhesiveness of the crystal column surface to be exposed；Then, by the crystalline substance to be exposed
Circle is cooled to room temperature（22 ~ 23 degrees Celsius）, the cooling technique carries out on the cold drawing of spin-coating equipment；Then, by crystalline substance to be exposed
Circle is placed in the supporting table of gluing chamber, the spin coating photoresist on the wafer to be exposed, forms photoresist layer, the photoresist
For positive photoetching rubber or negative photoresist；Then soft dry is carried out to the photoresist layer.
Then, Fig. 4 is refer to, treats before exposed wafer is exposed, exposure sources is calibrated automatically, exposed
First pinpointed focus of light device.
Exposure sources are calibrated automatically, obtain the first pinpointed focus of exposure sources, and the first pinpointed focus has reacted exposure
The performance of light device exposure sources when not being exposed to wafer, the first pinpointed focus has also reacted equipment itself or the external world
The influences of the factor to exposure sources focusing performance such as disturbance, when being subsequently monitored, measurement monitoring is subtracted by the first pinpointed focus
The second pinpointed focus that figure is obtained obtains the deviant of focal length, so as to be monitored in the pinpointed focus for treating exposure sources
When, the factors such as equipment itself or external disturbance are foreclosed in the influence to exposure sources focusing performance, improved optimal
The stability of focal length monitoring.First pinpointed focus can only consersion unit running status, by the first pinpointed focus on wafer
Photoresist be exposed the characteristic size of the photoetching offset plate figure to be formed not necessarily maximum characteristic size, therefore the present invention
Embodiment also need to by by the monitoring pattern on foregoing mask plate be transferred to on the photoresist layer on exposed wafer formed
Photoetching offset plate figure, then measures the characteristic size of photoetching offset plate figure, obtains the focal length of the corresponding exposure region of characteristic size maximum
As the second pinpointed focus, obtain the difference of the first pinpointed focus and the second pinpointed focus, the difference as focal length skew
Value, if the deviant of focal length is disposed offset from the range of the baseline threshold of value, exposure sources focusing stabilizer, if it is not, then exposing
The focusing of equipment is unstable, so as to improve the Stability and veracity of pinpointed focus monitoring.
In the embodiment of the present invention, the exposure system of the exposure sources includes：Wafer stage 302, waits to expose for loading
There is the first calibration mark 307, first calibration mark 307 has a printing opacity on light wafer, the wafer stage 302
Gap, also there is on the wafer stage 302 image for being used to receiving through the light in the gap of the first calibration mark 307 to pass
Sensor 311；Mask plate objective table 303, also has the second calibration for loading on mask plate 304, the mask plate objective table 303
There are some parallel printing opacity gaps in mark 308, second calibration mark 308；Optical projection system 305, for by thoroughly
The crystal column surface crossed in the light projection to wafer stage 302 of mask plate 304, the optical projection system 305 is additionally operable to will be saturating
The light projection in the gap of the second calibration mark 308 is crossed to the surface of the first calibration mark 307.
The detailed process that exposure sources are calibrated automatically is：Mask plate objective table 303 and wafer stage 302 are aligned；
Exposure light source is radiated at the surface of the second calibration mark 308, passes through optical projection through the light in the gap of the second calibration mark 308 first
System 305 projects the surface of the first calibration mark 307, while wafer stage 302 moves up and down along z-axis, through the first calibration
The light in the gap of mark 307 is received by imaging sensor 311, and the optical signal of receiving is converted into electric signal by imaging sensor 311,
Form the first electric signal waveform 309；Then, mask plate objective table 303 is moved in the x-direction, through the second calibration mark 308 first
The light in gap projects the surface of the first calibration mark 307 by optical projection system 305, while wafer stage 302 is along in z-axis
Lower motion, is received through the light in the gap of the first calibration mark 307 by imaging sensor 311, and imaging sensor 311 is by receiving
Optical signal is converted into electric signal, forms the second electric signal waveform；Said process is repeated, multiple electric signal waveforms are obtained；With wherein
The most strong corresponding focal length of the crest of one electric signal waveform is the first pinpointed focus.
After the first pinpointed focus is obtained, then by the mask plate 104 with monitoring pattern 101（With reference to Fig. 1）It is placed in exposure
On the mask plate objective table 303 of light device, the wafer to be exposed 300 for being formed with photoresist layer is placed in the wafer of exposure sources
On thing platform 302.
Then, Fig. 5 and Fig. 6, the mplifying structure schematic diagram of an exposure regions of the Fig. 6 for Fig. 5 after exposed, with not be refer to
Same focal length sequentially forms several exposure regions 301 to being exposed for the wafer 300 to be exposed, by mask plate 104
Monitoring pattern 101（With reference to Fig. 1）The photoresist layer of each exposure region 301 is transferred to, is formed accordingly in each exposure region 301
Photoetching offset plate figure 310.Treat after exposed wafer 300 is exposed, in addition to dried after exposure（PEB）, development and development is hard dries
Technique.
Described when being exposed, the energy of exposure keeps constant, and the corresponding focal length of each exposure region 301 is different, i.e., with not
When same focal length is exposed successively to several exposure regions 301 of the wafer 300 to be exposed, the focal length is according to exposure
The exposure order in area gradually increases.Preferably, the gradually increase of the focal length equally.In the particular embodiment, pass through
Preset an optimal reference focal length and some deviants corresponding with the quantity of exposure region, optimal reference focal length and one of them
Deviant sum is that corresponding focal length is exposed to current exposure region, and the deviant is by bearing just so that during exposure
Focal length gradually increase.
During exposure, the corresponding focal length of each exposure region 301 is different so that the photoresist figure formed in each exposure region 301
The characteristic size a of shape 310 is different, in the present embodiment, and the quantity of the photoetching offset plate figure 310 formed on each exposure region 301 is nine
Individual, photoetching offset plate figure 310 is located at the diverse location of exposure region 301, and photoetching offset plate figure 310 is distributed in nine grids, different exposures
The characteristic size of the photoetching offset plate figure of the same position in area is different.In other embodiments of the invention, each exposure region
The quantity of the photoetching offset plate figure of formation is more than or equal to 1.
Then, using the feature chi of photoetching offset plate figure 310 in alignment equipment or Electronic Speculum device measuring each exposure region 301
It is very little, obtain characteristic size maximum, focal length when exposure region corresponding to characteristic size maximum is exposed as second most
Good focal length.
The characteristic size maximum is：Measure the feature chi of the photoetching offset plate figure of same position in each exposure region
Very little, the maximum obtained in the characteristic size of the corresponding photoetching offset plate figure in same position of each exposure region, characteristic size is
Characteristic size maximum.Preferably, the characteristic size maximum is the photoetching offset plate figure in the centre position of each exposure region
Maximum in characteristic size.
In other embodiments of the invention, the characteristic size maximum is：Measure all light in each exposure region
The characteristic size of photoresist figure, obtains the corresponding average value of characteristic size of photoetching offset plate figures all in each exposure region,
Focal length when being exposed to the corresponding exposure region of average value maximum is as the second pinpointed focus.
Finally, obtain the difference of the first pinpointed focus and the second pinpointed focus, the difference as focal length deviant, if
When the deviant of focal length is disposed offset from the range of the baseline threshold of value, then exposure sources focusing stabilizer, if it is not, then exposure sources
Focus on unstable.
The baseline threshold scope of the deviant is：The a reference value of deviant-（0.5~2）The a reference value of × deviant ~ partially
The a reference value of shifting value+（0.5~2）The a reference value of a reference value of × deviant, i.e. deviant is subtracted（0.5~2）Deviant again
The a reference value of a reference value to deviant is added（0.5~2）The a reference value of deviant again.The benchmark threshold of preferably described deviant
Value scope is：The benchmark of a reference value+0.5 × deviant of a reference value ~ deviant of a reference value -0.5 of deviant × deviant
Value, a reference value of a reference value+1 × deviant of a reference value ~ deviant of a reference value -1 × deviant of deviant, deviant
The a reference value of a reference value+1.5 × deviant of a reference value ~ deviant of a reference value -1.5 × deviant, a reference value of deviant -
The a reference value of a reference value+2 × deviant of a reference value ~ deviant of 2 × deviant.False judgment during monitoring is prevented, is improved
The accuracy of monitoring.
The a reference value of the deviant is the difference for ideally obtaining the first pinpointed focus and the second pinpointed focus, or
The empirical value that person obtains when being exposure sources normal work.
To sum up, the mask plate of the embodiment of the present invention, the boss is in four the week side of boss walls of square body, rectangular preiection
The length in portion is equal to the length of side of square body, and the rectangular preiection portion is constituted for some parallel gratings strips, because rectangle is convex
The presence in the portion of rising so that four angles of monitoring pattern are caved in, and the two adjacent sides in rectangular preiection portion will not directly be contacted, and work as exposure
When the light irradiation of radiant is on mask plate, reduce the mutual shadow between the light through the two adjacent sides in rectangular preiection portion
Ring, when in the photoresist layer that the monitoring pattern on mask plate is transferred on wafer to be exposed, when forming photoetching offset plate figure, improve
Susceptibility of the photoetching offset plate figure relative to the focal length variations of exposure sources, so that the characteristic size tool of the photoresist formed
There is higher precision, be conducive to the monitoring of pinpointed focus
Further, the ratio between the length in the rectangular preiection portion and width 1:2~8:1, two sides in two adjacent rectangular preiection portions
Between spacing it is optimal, the light effect of influencing each other through the two adjacent sides in rectangular preiection portion is minimum, the light being correspondingly formed
The pattern uniformity of the side wall of photoresist figure preferably, makes the feature size resolution of the photoetching offset plate figure of measurement higher.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above to this hair
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Any simple modifications, equivalents, and modifications made to above example of technical spirit, belong to technical solution of the present invention
Protection domain.
Claims (9)
1. a kind of monitoring method of exposure sources pinpointed focus, it is characterised in that including：
The mask plate with monitoring pattern is provided, the mask plate includes substrate；Monitoring pattern on substrate, the monitoring
Figure includes the rectangular preiection portion of square body and the four the week side of boss walls positioned at square body, and the rectangular preiection portion is some
Parallel gratings strips；
There is provided and be formed with photoresist layer on wafer to be exposed, the wafer to be exposed；
Treat before exposed wafer is exposed, exposure sources are calibrated automatically, obtain exposure sources first is optimal burnt
Away from；
The wafer to be exposed is exposed to form several exposure regions with different focal lengths, by the monitoring pattern on mask plate
Each exposure region is transferred to, corresponding photoetching offset plate figure is formed in each exposure region；
The characteristic size of photoetching offset plate figure in each exposure region is measured, characteristic size maximum is obtained, it is maximum to characteristic size
It is worth focal length when corresponding exposure region is exposed as the second pinpointed focus；
Obtain the difference of the first pinpointed focus and the second pinpointed focus, the difference as focal length deviant, if focal length is inclined
When shifting value is disposed offset from the range of the baseline threshold of value, then exposure sources focusing stabilizer, if it is not, then the focusing of exposure sources is unstable
It is fixed, wherein, the baseline threshold scope of the deviant is：The a reference value of a reference value of deviant-(0.5~2) × deviant~
The a reference value of a reference value of deviant+(0.5~2) × deviant.
2. the monitoring method of exposure sources pinpointed focus as claimed in claim 1, it is characterised in that the length in rectangular preiection portion
Equal to the length of side of square body, the spacing of adjacent gratings bar is 0.05~0.15 micron.
3. the monitoring method of exposure sources pinpointed focus as claimed in claim 2, it is characterised in that the length of the lug boss
It is 1 with the ratio between width:2~8:1.
4. the monitoring method of exposure sources pinpointed focus as claimed in claim 1, it is characterised in that of the monitoring pattern
Number is more than or equal to 1, and the size of each monitoring pattern is identical.
5. the monitoring method of exposure sources pinpointed focus as claimed in claim 4, it is characterised in that of the monitoring pattern
Number is 9, and monitoring pattern is arranged in nine grids.
6. the monitoring method of exposure sources pinpointed focus as claimed in claim 1, it is characterised in that described with different focal lengths
When being exposed to form several exposure regions to the wafer to be exposed, the focal length gradually increases.
7. the monitoring method of exposure sources pinpointed focus as claimed in claim 6, it is characterised in that the focal length is equally
Gradually increase.
8. the monitoring method of exposure sources pinpointed focus as claimed in claim 1, it is characterised in that when the monitoring in mask plate
It is described when the quantity of the photoetching offset plate figure formed in corresponding each exposure region is more than 1 when the quantity of figure is more than 1
Characteristic size maximum is：Measure the characteristic size of the corresponding photoetching offset plate figure in same position of each exposure region, feature chi
Maximum in very little is characterized dimensional maximums.
9. the monitoring method of exposure sources pinpointed focus as claimed in claim 1, it is characterised in that when the monitoring in mask plate
When the quantity of figure is more than 1, the quantity of the photoetching offset plate figure formed in corresponding each exposure region is more than 1, the spy
Levying dimensional maximums is：The characteristic size of all photoetching offset plate figures in each exposure region is measured, is obtained in each exposure region
Maximum in the average value of the characteristic size of photoetching offset plate figure, average value is characterized dimensional maximums.
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| CN105549346A (en) * | 2014-10-29 | 2016-05-04 | 合肥芯硕半导体有限公司 | Method for acquiring optimal focal plane distance of laser direct imaging equipment |
| CN112666805B (en) * | 2020-12-30 | 2023-06-30 | 江苏友迪电气有限公司 | Focal length testing method and compensating method |
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| JP2004170947A (en) * | 2002-11-06 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Exposure mask, method for measuring focus, administrating method of aligner, and method for manufacturing electronic device |
| US7056625B2 (en) * | 2003-06-02 | 2006-06-06 | Intel Corporation | Focus detection structure |
| JP2008053413A (en) * | 2006-08-24 | 2008-03-06 | Oki Electric Ind Co Ltd | Focal deviation measuring method, and focal alignment method |
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| CN1916758A (en) * | 2005-08-15 | 2007-02-21 | 力晶半导体股份有限公司 | Method for photo mask, and correcting exposure machine |
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| CN103076715A (en) | 2013-05-01 |
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