CN103076306A - Photonic crystal sensor array based on cascaded silicon waveguide and edge chamber coupling - Google Patents
Photonic crystal sensor array based on cascaded silicon waveguide and edge chamber coupling Download PDFInfo
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Abstract
The present invention relates to an achievement method for a sensor array, and belongs to the technical field of photonic crystal sensors, wherein optimized silicon waveguide is adopted to cascade edge chamber coupling photonic crystal waveguides to form the sensor array. According to the present invention, three edge chamber coupling photonic crystal waveguides capable of independently working are cascaded by using an optimized silicon waveguide at the first time to achieve a photonic crystal sensor array; the optimized cascaded silicon waveguide is adopted, such that coupling connection between every edge chamber coupling photonic crystal waveguide is good so as to improve a transmission rate and provide conditions for large-scale integration of the photonic crystal sensor array; the edge chambers with different structures in the edge chamber coupling photonic crystal waveguides are designed, such that resonance frequencies of the edge chambers are different so as to obtain falling peaks at different positions in a transmission spectrum, wherein the resonance frequency of each photonic crystal edge chamber generates an offset when air holes of the photonic crystal are injected with analytes with different refractive indexes, such that the photonic crystal array sensing is achieved through detection of the offset of the resonance frequency; and with the photonic crystal sensor array, real-time and synchronization sensing of a plurality of analytes can be achieved, and a new method is provided for photonic crystal sensor array achievement.
Description
Technical field
The present invention relates to a kind of the utilization and optimize the implementation method that the silicon waveguide consists of the cascade of chamber, a plurality of limit coupling photon crystal wave-guide sensor array, belong to the photonic crystal sensors technical field.
Background technology
The characteristics such as the forbidden photon band that photonic crystal has, photon local, surface state, polarization make it become sensor production material new breakthrough point; Because the photonic crystal volume is little, be convenient to integrated, so utilize photonic crystal can make integrated, miniaturization, portable, sensor cheaply.
Up to the present, photonic crystal sensors mainly contains pressure transducer (document 1, M.Winger, T.D.Blasius, T.P.Mayer Alegre, A.H.Safavi-Naeini, S.Meenehan, J.Cohen, S.Stobbe. " A chip-scale integrated cavity-electro-optomechanics platform " .Vol.19, No.25/OPTICS EXPRESS (2011)), displacement transducer (document 2, Chen-feng Fan, Chih-lun Chiang, and Chin-ping Yu, " Birefringent photonic crystal fiber coils and their application to transverse displacement sensing " .Vol.19, No.21/OPTICS EXPRESS (2011)), humidity sensor (document 3, I.G.Kolobov, William B.Euler, and I.A.Levitsky. " Optical humidity sensing and ultrasound effect for mesoporous silicon one-dimensional photonic crystals " .APPLIED OPTIC Vol.49, No.1 (2010)), index sensor (document 4, D.F.Dofner, T.Hurlimann, T.Zabel, L.H.Frandsen, G.Abstreiter, J.J.Finley. " Silicon photonic crystal nanostructures for refractive index sensing " .APPLIED PHYSICS LETTERS 93,181103 (2008)) and biochemical sensor (document 5, Carlos Angulo Barrios. " Optical Slot-Waveguide Based Biochemical Sensors " .Sensors 2009,9,4751-4765) etc.Recent years, the fast development of photonic crystal sensors array, such as (document 6, Sudeshna Pala, Elisa Guillermain, Rashmi Sriram, Benjamin L.Miller, Philippe M.Fauchet. " Silicon photonic crystal nanocavity-coupled waveguides for error-corrected optical biosensing " .Biosensors and Bioelectronics 26 (2011) 4024-4031) introduced and utilized a plurality of microcavitys to carry out sensing, (document 7, Daquan Yang, Huiping Tian, Yuefeng Ji. " Nanoscale photonic crystal sensor arrays on monolithic substrates using side-coupled resonant cavity arrays " .Vol.19, No.21/OPTICS EXPRESS (2011)) introduced the sensor array in a plurality of coupling edge chamber.Wherein, the optically-coupled quality has direct relation between the quality of photonic crystal sensors array performance and the photon crystal device.
In order to address the above problem, the present invention utilizes the silicon waveguide of optimization that the cascade of chamber, a plurality of limit coupling photon crystal wave-guide is consisted of sensor array, form the chamber, limit at each photonic crystal waveguide structure by translation waveguide one side airport, utilize the chamber, limit to realize sensing function.The present invention is with the coupling photon crystal wave-guide silicon waveguide cascade of chamber, a plurality of limit, and each chamber, limit coupling photon crystal wave-guide is separate each other, can design separately, and simplicity of design, manufacture difficulty is low, and the practical operation serious forgiveness is high.
The present invention will utilize in the photon crystal wave-guide cascade formation sensor array of silicon waveguide with chamber, a plurality of limit coupled structure of optimizing, by optimizing the coupling between silicon waveguide and the photon crystal wave-guide, reduced the loss of the light at the place that is of coupled connections, and by inject the analyte of different refractivity at every sensitive zones, realized the real-time synchronization sensing of multiple different refractivity analyte.
Summary of the invention
The present invention proposes a kind of photonic crystal integrated sensors array based on the photonic crystal resonant cavity structure.This photonic crystal sensors array can be at semiconductor material substrate (SOI) by electron beam lithography (electron beam lithography, EBL) etc. manufacturing technology is prepared the dull and stereotyped cascade structure of 2 D photon crystal, and in all airports of photonic crystal sensors array, inject analyte by little implantttion technique, when the environment change in the airport, the effective refractive index of photonic crystal changes, therefore cause the tenesmus peak in the W1 waveguide transmission spectrum to be offset, can realize detection to photonic crystal airport inner analysis thing by the side-play amount of observing lower peak pendant.By the cascade silicon waveguide of optimizing the photon crystal wave-guide that chamber, a plurality of limit is coupled is connected, reduced the loss at the place that is of coupled connections, be convenient to large-scale integrated.
The present invention at first is studied single chamber, limit coupling photonic crystal waveguide structure.When the light of particular range of wavelengths enters photon crystal wave-guide, the frequency light corresponding with chamber, limit resonance frequency enters the chamber, limit and resonates, remaining light can continue to propagate along waveguide, output terminal in waveguide can detect an obvious tenesmus of generation peak in the transmission spectrum, the analyte of different refractivity is injected the airport of photon crystal structure by little implantttion technique, can cause that the resonance frequency of microcavity changes (namely the corresponding peak that drops is offset).
On the basis of chamber, Research of Photonic Crystal limit coupling photonic crystal waveguide structure, by using the silicon waveguide with three photon crystal wave-guide cascades with the coupling of different edge chamber, and different chambeies, limit has different resonance frequencies, can draw by emulation that three different positions produce the tenesmus peak simultaneously in transmission spectrum, respectively corresponding different limit cavity configurations.Therefore little injection of respectively each photonic crystal hollow pore being carried out analyte can realize multiple real-time synchronization sensing detection with different refractivity liquid.
By simulation result is studied, in photon crystal structure of the present invention, when the air section edge of cascade silicon waveguide both sides and photon crystal structure outermost one row airport centre distance were 0.05a, coupling effect was best.
Purpose of the present invention can be achieved by the following measures:
The sensor array that a kind of silicon waveguide that utilizes optimization consists of the photon crystal wave-guide cascade of chamber, a plurality of limit coupling, wherein:
This photonic crystal sensors array is that three photon crystal wave-guides with the coupling of different edge chamber are realized with the silicon waveguide cascade of optimizing, this sensor is based on the triangular crystal lattice structure of 2 D photon crystal, and wherein two-dimensional photon crystal structure can be at semiconductor material substrate by fabrication techniques such as electron beam exposure methods.Remove delegation's airport in the middle of each perfect two-dimensional photon crystal structure, introduce W1 waveguide wire defective, then introduce microcavity in W1 waveguide one side and form chamber, limit coupled waveguide, wherein, the coupling edge cavity configuration in three photon crystal wave-guides is different.Cascade up with the photon crystal wave-guide of silicon waveguide with the coupling of chamber, three limits, the light that each photon crystal wave-guide is exported can be along the silicon waveguide, continue transmission thereby enter next photon crystal wave-guide, output optical transmission rate is more than 90% in the last output waveguide.
Described photonic crystal integrated sensors array is made of photon crystal wave-guide and the waveguide of cascade silicon of three different edge chamber coupled structures, and corresponding each photon crystal wave-guide upside all has a with it chamber, limit of coupling, and wherein the width of photonic crystal W1 waveguide is
A is the grating constant of photonic crystal.
In the described 2 D photon crystal, background media is silicon, is air in the airport.
In the described 2 D photon crystal, grating constant is a=400nm, and the radius of airport is r=0.3a.
The refractive index of described background media silicon is 3.50, and the refractive index of airport is 1.00.
Described cascade waveguide length is 14.5a, and width is
Air section edge and photon crystal structure outermost one row airport centre distance are 0.05a.
The design in described three photon crystal wave-guide coupling edge chambeies be with near two airports of the second interline of W1 waveguide upside respectively left with to right translation, the translation distance s in first photon crystal wave-guide coupling edge chamber
1=0.32a, the translation distance s in second photon crystal wave-guide coupling edge chamber
2=0.25a, the translation distance s in the 3rd photon crystal wave-guide coupling edge chamber
3=0.18a also is s
1=128nm, s
2=100nm, s
3=72nm, described photonic crystal sensors array structure can use EBL technology etching on the SOI material to realize, present EBL technology can realize the accurate processing of Nano grade, can satisfy needs of the present invention.The resonance frequency that changes the coupling edge chamber can be injected the airport realization with analyte by little implantttion technique.
Comparing the present invention with classic method has the following advantages:
The sensor array that mentioned a kind of silicon waveguide that utilizes optimization consists of the cascade of chamber, a plurality of limit coupling photon crystal wave-guide in this programme is a kind of by the identical photonic crystal waveguide structure and different photon crystal micro cavities of design guided mode, uses the silicon waveguide that the photon crystal wave-guide cascaded design of chamber, a plurality of limit coupling is finished.By in the airport of photon crystal structure, injecting the analyte of different refractivity, can realize real-time, synchronously detection to different analyte refractive indexes.The present invention proposes chamber, a plurality of limit coupling photon crystal wave-guide is carried out the photonic crystal integrated sensors array that cascade realizes that different analytes detect simultaneously with the silicon waveguide of optimizing first.
In addition, the present invention is with the integrated sensor array of chamber, a plurality of limit coupling photon crystal wave-guide by the cascade silicon waveguide optimized, so that apart from each other between each structure, the cascade silicon waveguide of optimizing has reduced the loss of light, improved the transmissivity of bright dipping, impact on contiguous structure when the airport on single structure operates is very little, has strengthened extensibility, is beneficial to integrated utilization.Simultaneously, the present invention carries out little injection to the large quantity of air hole, with respect to the operation fault tolerance rate that better realizability, operability and Geng Gao are only arranged for photonic crystal sensors some or that certain several airport injects.
Principle of the present invention is as follows:
A kind of silicon waveguide by optimization related in this programme is a kind of based on two-dimensional photon crystal structure with the sensor array that the cascade of chamber, a plurality of limit coupling photon crystal wave-guide consists of, by designing three different chambeies, limit three photon crystal wave-guide one sides, the resonance frequency in chamber, three limits is different, so that three diverse locations produce the tenesmus peaks on transmission spectrum, utilize and inject analyte in the airport and cause that the variation of tenesmus peak position carries out sensing; Design by this cascade connection type is finished the functions such as comparison, sensing so that can the analyte of multiple different refractivity be detected simultaneously.By the waveguide of optimal design cascade silicon, so that each photon crystal wave-guide coupling is good, obtain higher transmissivity simultaneously.Its ultimate principle is: when when photonic crystal W1 waveguide one side is introduced microcavity, the light that the guided mode medium frequency is in the microcavity resonance frequency can enter microcavity and local therein, in transmission spectrum, can produce a sharp-pointed tenesmus peak in the guided mode scope, when in the photonic crystal airport during with little implantttion technique filling liquid, the effective refractive index of airport changes, will so that the resonance frequency of microcavity change, therefore the drop position at peak also can change, and can detect the refractive index of filling liquid by the measurement that the tenesmus peak position is changed.After chamber, the limit Coupled Passive Waveguide Structure cascade with different resonance frequencies, can produce three tenesmus peaks at three diverse locations in the guided mode scope in the transmission spectrum, owing to working alone between the microcavity, so three peak-to-peak variations of tenesmus are independent of each other, thereby can carry out sensing to multiple analytes simultaneously, can realize the array sensing of many kinds of substance.
Description of drawings
Below each figure photonic crystal sensors array structure parameter of getting all with embodiment in identical.
Fig. 1 is the photonic crystal sensors array structure model schematic diagram among the present invention, wherein comprise the cascade silicon waveguide of the waveguide of input silicon, output silicon waveguide and two optimizations, comprised a W1 waveguide and a coupling edge chamber in each chamber, limit coupling photonic crystal waveguide structure.The chamber, limit is moved horizontally left and to the right respectively by two airports and forms; Grating constant a=400nm, airport radius r=120nm, the refractive index n of medium silicon
Si=3.50.
Fig. 2 is single chamber, limit coupling photonic crystal waveguide structure, chamber, limit displacement s=0.25a.
Whole airport refractive indexes are respectively 1.330,1.355,1.380 o'clock transmission spectrum in chamber, limit coupling photonic crystal waveguide structure when Fig. 3 is chamber, limit displacement s=0.25a, and it is red that corresponding curve color is respectively, blueness, green.Centre wavelength corresponding to tenesmus peak is respectively 1522nm, 1526nm, 1529nm.
Fig. 4 is that the field pattern of electric field in the x-y plane of single chamber, limit coupling photonic crystal waveguide structure distributes.
Fig. 5 is that the field pattern of electric field in the x-y plane of cascade silicon waveguide (a) and the cascade silicon waveguide (b) of not optimizing after optimizing distributes.
Fig. 6 is that the refractive index of the whole airports of photonic crystal sensors array in this programme is that 1.330 transmission spectrum and left field airport refractive index are 1.380, the refractive index that changes other regional air holes is the transmission spectrum that obtains after 1.330, and it is red and blue that the color of the curve that it is corresponding is respectively.
Fig. 7 is that the refractive index of the whole airports of photonic crystal sensors array in this programme is that 1.330 transmission spectrum and left field airport refractive index are 1.380, zone line airport refractive index is 1.355, right side area airport refractive index is 1.330 transmission spectrum, and it is red and blue that the color of the curve that it is corresponding is respectively.
Fig. 8 is that the whole airport refractive indexes of the photonic crystal sensors array in this programme are respectively 1.330,1.355,1.380 and 1.405 o'clock transmission spectrum, and it is red that the color of the curve that it is corresponding is respectively, blueness, green and black.
Embodiment
Photonic crystal sensors array structure model schematic diagram among the present invention as shown in Figure 1, wherein comprised chamber, three limits coupling photon crystal wave-guide that is connected by the cascade silicon waveguide of optimizing, the chamber, limit is by forming left and to right translation respectively near two airports of the second interline of W1 waveguide upside, and the shift length in chamber, three limits is respectively s
1=128nm, s
2=100nm, s
3=72nm.The radius of airport is 0.3a, and grating constant is a=400nm, the refractive index n of medium silicon
Si=3.50.
Because the difference of airport refractive index can affect the variation of microcavity resonance frequency, therefore can consist of the photonic crystal sensors array that multiple analytes detects to the analyte that airport injects different refractivity by design.The chamber, limit is the key component of whole working sensor, and it directly has influence on the sensitivity of sensor, resolution, and therefore needs are adjusted the structural parameters in chamber, limit.
The waveguide of cascade silicon and chamber, limit being of coupled connections of photon crystal wave-guide of coupling have a significant impact whole sensor array, and all there is direct relation the position at both sides air section size and air section edge with the coupling quality about the width of silicon waveguide, length, the silicon waveguide.In order to optimize the design of photonic crystal sensors array, on fixed basic structure basis, need to optimize the structural parameters of cascade silicon waveguide.
1. design the limit cavity configuration of photon crystal wave-guide.
As shown in Figure 2, when to inject respectively refractive index in whole airports be 1.330,1.355,1.380 analyte, utilize Finite-Difference Time-Domain Method that chamber, single limit coupling photonic crystal waveguide structure is carried out emulation, obtain transmission spectrum as shown in Figure 3.Observation obtains when the refractive index of airport becomes large, and tenesmus summit generation red shift is namely moved to the long direction of ripple in the transmission spectrum, therefore utilizes this chamber, limit can carry out sensing.
Utilize emulation to draw when displacement s changes the position at tenesmus peak in the guided mode scope and calculate the Q value in chamber, limit.Frequencies omega centered by the input light source
0During Gauss's light source of=0.259 (2 π a/c), the spatial distribution map of electric field as shown in Figure 4 under the lower state.Can see that a part of light enters the chamber, limit.Along with red shift occurs in the position at the increase of displacement s tenesmus peak.Consider the position at tenesmus peak can not be too near the initial wavelength of guided mode, consider simultaneously the peak-to-peak differentiation that respectively drops, unlikely generation aliasing is so the displacement in selected chamber, three limits is respectively s in consisting of last one-piece construction
1=128nm, s
2=100nm, s
3=72nm.The Q value that calculates three microcavitys is approximately 270.
2. design the structure of cascade silicon waveguide.
Being of coupled connections between two photon crystal wave-guides formed by a silicon waveguide cascade, this silicon waveguide up and down both sides are air, light is propagated forward along the silicon waveguide.Relatively the width of silicon waveguide is respectively
With
The time the emulation field pattern, r is the radius of airport, a is grating constant, when the width of silicon waveguide is
The time, W1 waveguide and silicon waveguide-coupled place have in the air that more light leaks into silicon waveguide both sides, and the transmission of light also becomes irregular in the waveguide of cascade silicon.
The length of silicon waveguide on cascade also to some extent the impact, when cascade silicon waveguide length very in short-term, the defective coupling of previous photon crystal wave-guide and a rear photon crystal wave-guide, part light leaks from the silicon waveguide.Strengthen after the length of cascade silicon waveguide, coupling effect improves, and considering that light transmit in the silicon waveguide also can loss of energy, so the silicon waveguide length of design should not be long, the length of finally setting the waveguide of cascade silicon is 14.5a.
In initial emulation, the Area comparison of the air section of silicon waveguide both sides is little, and from emulation gained field pattern, the more silicon plate that has coupled light to beyond the air section makes transmissivity lower, shown in Fig. 5 (b).In order to improve this situation, increase the area of air section, so that the coboundary of top air section is near delegation's airport of photon crystal structure the top, the structure of below and top are symmetrical, observe the field pattern that emulation obtains this moment, the light of previous photon crystal wave-guide output can be coupled into next photon crystal wave-guide preferably.
When both sides air section Edge Distance photon crystal structure ragged edge one row airport is far away about the silicon waveguide, have part light by the silicon dielectric leakage between outermost row airport and the air section out at photon crystal wave-guide and silicon waveguide-coupled place, some light that leak out also can enter next photon crystal structure affects its work.When the air section edge enters photon crystal structure when more, can impact some airports, destroy the original structure of photonic crystal, affect its work.Finally, by repeatedly adjusting, the hole heart distance of determining air section edge and outermost row airport obtains optimum coupled structure during for 0.05a, the electric field of the cascade silicon waveguide after the optimization in the distribution of the field pattern in the x-y plane shown in Fig. 5 (a).
3. realize the photonic crystal sensors array by introducing little implantttion technique.
Utilize little implantttion technique can in the airport of medium background airport structure photonic crystal, inject the liquid of different refractivity, change the refractive index n of airport, thereby realization sensing, as shown in Figure 6, the airport refractive index is 1.380 and when the airport refractive index is 1.330 in other two zones in only changing the photonic crystal region in left side, the transmission spectrum curve is contrast in 1.330 o'clock with whole airport refractive indexes, emulation draws only has a tenesmus peak to be offset, other two tenesmus peak positions are constant, thereby illustrate that each photonic crystal region can carry out independent sensing, can be simultaneously the liquid of multiple different refractivity be detected.As shown in Figure 7, injected respectively the different liquid of refractive index at Three regions, left side photonic crystal region airport refractive index is 1.380, middle photonic crystal region airport refractive index is 1.355, right side photonic crystal region airport refractive index is 1.330, observes three tenesmus peaks and all is offset.Be from the transmission spectrum curve of emulation and whole airport refractive indexes that 1.330 contrasts can be observed the refraction index changing amount of airport larger, corresponding tenesmus peak side-play amount is just larger, by the refractive index that relatively can compare fast different liquids to three tenesmus peak side-play amounts, thereby infer relevant nature or the parameter of testing liquid, carry out sensing.As shown in Figure 8, detecting refractive index with All Ranges respectively is 1.330,1.355,1.380 and 1.405 liquid, emulation obtains the transmission spectrum curve, corresponding curve is respectively redness, blueness, green and black, when the airport refractive index increased gradually, red shift had all occured in three tenesmus peaks as can be known in observation.In this case study on implementation, by changing the refractive index of photonic crystal airport, can realize the change of resonance frequency, namely export the peak that drops in the transmission spectrum and be offset, therefore can detect by the variation of observing the tenesmus peak position refractive index of analyzed liquid in the airport.Calculate by formula S=Δ λ/Δ n, the skew at tenesmus peak and the variations in refractive index in the airport have linear relationship, the sensitivity S=120nm/RIU of the photonic crystal sensors among the present invention, and wherein, RIU represents that refractive index variable quantity is 1.
Claims (6)
1. implementation method based on the photonic crystal sensors array of the waveguide of cascade silicon and chamber, limit coupling, wherein: this photonic crystal sensors array is based on the airport triangular crystal lattice structure of 2 D photon crystal, the wherein refractive index n of background structure silicon
Si=3.50.In each photon crystal wave-guide, introduce respectively a chamber, limit simple in structure, and with the silicon waveguide of optimizing with the cascade of chamber, three limits coupling photon crystal wave-guide, realize sensing by in airport, injecting analyte.
2. implementation method according to claim 1 is characterized in that the specific design method in chamber, photonic crystal limit and the optimization method of cascade silicon waveguide, and the design in chamber, limit is by two airports are formed left and to right translation respectively in this programme.
3. implementation method according to claim 1 is characterized in that improving the coupling between photon crystal wave-guide and the waveguide of cascade silicon, needs to change width and the length of cascade silicon waveguide, also need change silicon waveguide up and down area and the marginal position of both sides air section.
4. according to claim 2 or 3 described implementation methods, it is characterized in that finishing perception, determination and analysis to different analytes by the side-play amount of measuring tenesmus peak in the output terminal transmission spectrum.
5. according to claim 2 or 3 described implementation methods, it is characterized in that having the ability that detects simultaneously multiple analytes.
6. according to claim 2 or 3 described implementation methods, it is characterized in that having the sensing characteristics of higher sensitivity, when detecting the analyte of different refractivity, sensitivity is 120nm/RIU.
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Application publication date: 20130501 |