CN103076089B - Light sensor and touch screen terminal - Google Patents
Light sensor and touch screen terminal Download PDFInfo
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- CN103076089B CN103076089B CN201210579116.6A CN201210579116A CN103076089B CN 103076089 B CN103076089 B CN 103076089B CN 201210579116 A CN201210579116 A CN 201210579116A CN 103076089 B CN103076089 B CN 103076089B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04106—Multi-sensing digitiser, i.e. digitiser using at least two different sensing technologies simultaneously or alternatively, e.g. for detecting pen and finger, for saving power or for improving position detection
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- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention is applicable to the technical field of light sensing, and provides a light sensor, which comprises a photosensitive device and a capacitance touch screen control chip; the photosensitive device is connected with the capacitance touch screen control chip, the capacitance touch screen control chip is used for modulating the frequency of the photosensitive device, so that a first analog signal representing the ambient brightness and outputted by the photosensitive device is superimposed onto a carrier to be transmitted, and then the capacitance touch screen control chip separates the first analog signal from the carrier to be converted into a first digital signal. In the light sensor, the capacitance touch screen control chip is used for modulating the photosensitive device, so that the frequency of the analog photosensitive signal outputted by the photosensitive device adapts to the demodulation frequency of the capacitance touch screen control chip, the light sensing is realized through the amplification function and the analog-digital conversion function of the capacitance touch screen control chip, and the photosensitive detection precision and response speed can be greatly improved through the combination of the photosensitive device and the advanced capacitance touch technology.
Description
Technical field
The invention belongs to light field of sensing technologies, relate in particular to a kind of light sensing sensor and touch screen terminal.
Background technology
Current light sensing technology adopts 3 kinds of modes, the first as shown in Figure 1, light-inductive diode or triode, periphery adds amplifying circuit and analog to digital conversion circuit, realizes light sensing digital quantization; The second as shown in Figure 2, the integrated amplifier of photosensitive device own, outputting analog signal, then coordinate peripheral analog to digital conversion circuit to realize light sensing digital quantization; The third as shown in Figure 3, the integrated amplifier of photosensitive device own and analog to digital conversion circuit, directly export digital quantization signal.
The range of application of this light sensing technology is more and more extensive, not only can be applicable to lighting field, and along with the variation of electronic product function, is also applied to more and more on end product to realize different functions.For example, on mobile communication terminal, the variation that can be used for ambient light realizes the backlight illumination of automatically adjusting mobile communication terminal, for user provides better use impression.
Summary of the invention
First technical matters to be solved by this invention is to provide a kind of light sensing sensor.
The present invention is achieved in that a kind of light sensing sensor, comprises photosensitive device, also comprises a capacitance touch screen control chip; Described photosensitive device is connected with described capacitance touch screen control chip, described capacitance touch screen control chip is for carrying out frequency modulation (PFM) to the first simulating signal of the sign environmental light brightness of described photosensitive device output, the first simulating signal of the sign environmental light brightness of described photosensitive device output is superimposed on a carrier wave and transmits, the first digital signal is isolated and be converted to described capacitance touch screen control chip by described the first simulating signal from described carrier wave again.
Second technical matters to be solved by this invention is to provide a kind of touch screen terminal, and it comprises light sensing sensor as above.
In the present invention, use capacitance touch screen control chip to modulate photosensitive device, so that the frequency of simulation photoreceptor signal and the frequency, demodulation frequency of capacitance touch screen control chip of photosensitive device output adapt, the amplification, the analog-digital conversion function that by capacitance touch screen control chip, itself have realize light sensing, and photosensitive device combines and can greatly promote precision and the response speed of photosensitive detection with advanced capacitance touching control technology.
Accompanying drawing explanation
Fig. 1, Fig. 2, Fig. 3 are the schematic diagrams of three kinds of light sensing technology providing of prior art;
Fig. 4 is a kind of structure principle chart provided by the invention;
Fig. 5 is the structure principle chart of another kind of light sensing sensor provided by the invention;
Four kinds of circuit diagrams of light sensing sensor when Fig. 6 A, Fig. 6 B, Fig. 6 C, Fig. 6 D are photosensitive device employing phototriode provided by the invention, capacitance touch screen control chip employing mutual capacitance touchscreens control chip;
Four kinds of circuit diagrams of light sensing sensor when Fig. 7 A, Fig. 7 B, Fig. 7 C, Fig. 7 D are photosensitive device employing photodiode provided by the invention, capacitance touch screen control chip employing mutual capacitance touchscreens control chip;
Four kinds of circuit diagrams of light sensing sensor when Fig. 8 A, Fig. 8 B, Fig. 8 C, Fig. 8 D are photosensitive device employing phototriode provided by the invention, capacitance touch screen control chip employing self-capacitance touch screen control chip;
Four kinds of circuit diagrams of light sensing sensor when Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D are photosensitive device employing photodiode provided by the invention, capacitance touch screen control chip employing self-capacitance touch screen control chip;
A kind of figure of optimizing structure when Figure 10, Figure 11 are respectively employing mutual capacitance touchscreens control chip provided by the invention and self-capacitance touch screen control chip;
Figure 12, Figure 13 are respectively that employing mutual capacitance touchscreens control chip provided by the invention and self-capacitance touch screen control chip are realized the theory diagram that approaches induction.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The present invention, by the components and parts of multiplexing capacitance touch screen control chip, combines photosensitive device and realizes light sensing and quantize output with capacitance touching control chip.
With reference to Fig. 4, light sensing sensor provided by the invention comprises photosensitive device 1 and capacitance touch screen control chip 2, this capacitance touch screen control chip 2 can be used in capacitance touch screen terminal, is mainly used in the touch operation on touch-screen respond to and make corresponding steering order.In the present invention, photosensitive device 1 connects capacitance touch screen control chip 2, photosensitive device 1 is for sensitive context luminance brightness, according to environmental light brightness, produces the first simulating signal output, and capacitance touch screen control chip 2 is for amplifying this first simulating signal and being converted to the first digital signal.The frequency ratio of considering environment photosensor signal is lower, and the frequency, demodulation frequency of capacitance touch screen control chip 2 is higher, capacitance touch screen control chip 2 cannot direct-detection to the first simulating signal, in the present invention, capacitance touch screen control chip 2 is also for carrying out frequency modulation (PFM) to photosensitive device 1, make photosensitive device 1 output characterize the first simulating signal of environmental light brightness, this first simulating signal is superimposed on a carrier wave to be transmitted, the frequency of the first simulating signal and the frequency, demodulation frequency of capacitance touch screen control chip 2 are adapted, also be conducive to provide antijamming capability simultaneously, first 2 pairs of the first simulating signals of capacitance touch screen control chip amplify to process needs the first simulating signal to separate from carrier wave before.
As another embodiment of the present invention, if being combined, the luminescent devices such as above-mentioned light sensing sensor and infrared-emitting diode also can realize functions such as approaching induction, forms a surround lighting and respond to and approach induction pick-up.As shown in Figure 5, this light sensing sensor also comprises infrared light-emitting device 3, is connected with capacitance touch screen control chip 2, can be luminous under the modulation of capacitance touch screen control chip 2.This sensor that possesses two kinds of inducing functions has two kinds of mode of operations, and under the first pattern, the simulating signal producing according to photosensitive device is carried out surround lighting detection, and the simulating signal being produced by reflected light according to photosensitive device under the second pattern is carried out distance and detected.Specific as follows: the first pattern, infrared light-emitting device 3 is closed, capacitance touch screen control chip 2 light modulated sensing devices 1, the first simulating signal of the sign environmental light brightness of photosensitive device 1 output is superimposed on a carrier wave and transmits, the first digital signal is isolated and be converted to capacitance touch screen control chip 2 by the first simulating signal from carrier wave again.The second pattern, infrared light-emitting device 3 sends infrared light while opening under the modulation of capacitance touch screen control chip 2, and the infrared light that infrared light-emitting device 3 is sent is superimposed on a carrier wave and transmits; Now photosensitive device 1 is modulated and for responding to the infrared light being reflected back through barrier, and produces the second simulating signal that size matches with it, and the second digital signal is isolated and be converted to capacitance touch screen control chip 2 the second simulating signal from carrier wave.
For mutual capacitance (projection-type) touch-screen control chip, as shown in Fig. 6 A-Fig. 6 D, 7A-Fig. 7 D, adopt 1 receiving cable RX and 1 transmission channel TX or universal I/O port GPIO to realize light sensing, utilize TX or GPIO to modulate the signal of photosensitive diode or triode, receiving cable RX is for detection of input, and transmission channel TX and universal I/O port GPIO are for the output of modulation signal.Adopt again in addition 1 independent transmission channel TX or GPIO to drive infrarede emitting diode, coordinate light sensing to realize and approach inducing function.In Fig. 6 A to Fig. 6 C, photosensitive device is phototriode Q1, there are four kinds with the connected mode of mutual capacitance touchscreens control chip 2, mode one (Fig. 6 A): the collector of phototriode Q1 connects a receiving cable RX of mutual capacitance touchscreens control chip by a capacitor C, the collector of phototriode Q1 also connects a transmission channel of mutual capacitance touchscreens control chip, grounded emitter by a resistance R 1.Mode two (Fig. 6 B), the collector of phototriode directly connects a transmission channel of mutual capacitance touchscreens control chip, the emitter of phototriode is by a resistance eutral grounding, and emitter also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity.Mode three (Fig. 6 C): the collector of phototriode connects a power end VDD, the emitter of phototriode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance, emitter also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity; Mode four (Fig. 6 D), the collector of phototriode directly connects a transmission channel of mutual capacitance touchscreens control chip, and the emitter of phototriode is successively by connecting a receiving cable of mutual capacitance touchscreens control chip after a resistance, an electric capacity.In Fig. 7 A to Fig. 7 D, photosensitive device is photodiode D1, there are equally four kinds of modes with the annexation of mutual capacitance touchscreens control chip 2, mode 1 (Fig. 7 A), the negative electrode of photodiode D1 connects a receiving cable RX of mutual capacitance touchscreens control chip by a capacitor C, through receiving cable, be connected with amplifier, the negative electrode of photodiode D1 also connects a transmission channel of mutual capacitance touchscreens control chip, the plus earth of photodiode D1 by a resistance R 3.Mode two (Fig. 7 B), the negative electrode of photodiode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance R 3, the anode of photodiode is by a resistance eutral grounding, and anode also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity.Mode three (Fig. 7 C): the negative electrode of photodiode connects power end VDD, anode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance R 3, and anode also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity.Mode four (Fig. 7 D): the negative electrode of photodiode connects power end VDD, negative electrode also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity, and anode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance R 3.In Fig. 6, Fig. 7, infrared light-emitting device selects infrarede emitting diode D2 to realize, and the anode of infrarede emitting diode D2 connects a transmission channel TX or a universal I/O port of mutual capacitance touchscreens control chip, plus earth by a resistance R 2.
Receiving cable RX, transmission channel TX in Fig. 6, Fig. 7 are all pins of mutual capacitance touchscreens control chip, are respectively used to receive the transmission of touch operation signal and steering order, and GPIO represents the universal I/O port of mutual capacitance touchscreens control chip.
For self-capacitance touch screen control chip, as shown in Fig. 8 A-Fig. 8 C, Fig. 9 A-Fig. 9 C, adopt self-capacitance channel C HX access photodiode or triode, realize environmental light brightness and detect.Adopt in addition 1 self-capacitance channel C HX or GPIO to drive infrarede emitting diode, coordinate light sensing to realize and approach induction physical layer function.In Fig. 8 A to Fig. 8 C, photosensitive device 1 is phototriode Q1, there are three kinds of modes with the annexation of mutual capacitance touchscreens control chip 2, mode one (Fig. 8 A), the collector of phototriode Q2 connects a self-capacitance passage of self-capacitance touch screen control chip, the grounded emitter of phototriode Q2 by a resistance R 4.Mode two (Fig. 8 B), the collector of phototriode Q2 connects power end VDD by a resistance R 4, and the emitter of phototriode Q2 connects a self-capacitance passage of self-capacitance touch screen control chip.Mode three (Fig. 8 C), the collector of phototriode Q2 connects power end VDD, and the emitter of phototriode Q2 connects a self-capacitance passage of self-capacitance touch screen control chip by a resistance R 4.In Fig. 9 A to Fig. 9 C, photosensitive device 1 is photodiode D3, there are three kinds of modes with the annexation of self-capacitance touch screen control chip 2, mode one (Fig. 9 A), its negative electrode connects a self-capacitance passage of self-capacitance touch screen control chip, the plus earth of photodiode D3 by a resistance R 5.Mode two (Fig. 9 B): the negative electrode of photodiode connects power end VDD, a self-capacitance passage of the anodic bonding self-capacitance touch screen control chip of photodiode D3 by a resistance R 5.Mode three (Fig. 9 C): the negative electrode of photodiode D3 connects power end VDD, the anode of photodiode connects a self-capacitance passage of self-capacitance touch screen control chip by a resistance R 5.In Fig. 8, Fig. 9, infrared light-emitting device selects infrarede emitting diode D4 to realize, and the anode of infrarede emitting diode D4 connects a self-capacitance passage or a universal I/O port of self-capacitance touch screen control chip, plus earth by a resistance R 6.
The basic principle of Fig. 6 to Fig. 9 is: under direct current supply voltage, photodiode D1 or phototriode Q1 output current change along with the variation of induction light intensity, because the variation of light is comparatively slow, be converted to the normally signal of lower frequency (be less than hundreds of Hz, be even similar to direct current signal) of electric signal.
No matter capacitance touch screen control chip 2 is mutual capacitance technology or self-capacitance technology, drive or exciting signal frequency all higher (conventionally interval at tens KHz to 1MHz), with the electric signal of photodiode or triode output not in same signal band.For the signal of photodiode or triode output is modulated in the detectable chip frequency band range of capacitance touch screen chip, just need to adopt in technique scheme and by mutual capacitance or self-capacitance touch screen control chip, photodiode or phototriode be modulated.
The light sensing principle of mutual capacitance and self-capacitance respectively as shown in Figure 10, Figure 11, wherein mutual capacitance touchscreens control chip at least comprises with self-capacitance touch screen control chip amplifier and the demodulating unit being connected, also can comprise microprocessor unit, the modulation signal of different is self-capacitance exports photosensitive device 1 to by amplifier, and the modulation signal of mutual capacitance is exported by transmission channel.Wherein amplifier is used for amplifying the first simulating signal, and demodulating unit is for the first digital signal is isolated and be converted to the first simulating signal from carrier wave, and microprocessor unit is for carrying out linearization process or carry out format conversion the first digital signal.
Figure 12, Figure 13 have further shown the near field principle of induction of mutual capacitance and self-capacitance, infrared proximity induction to realize principle as follows: infrared light-emitting device 3 transmitting Infrared, when object near time, Infrared is reflected back, photosensitive device 1 receives the light of object reflection, realizes the detection of adjusting the distance according to the size of signal.
Similarly, infrarede emitting diode transmit normally low frequency signals or direct current signal, the driving of capacitance touch screen control chip or exciting signal frequency be higher (conventionally interval at tens KHz to 1MHz) all, so adopt TX (mutual capacitance), CHX (self-capacitance) or GPIO modulated red UV light-emitting diode.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (15)
1. a light sensing sensor, comprise photosensitive device, it is characterized in that, also comprise capacitance touch screen control chip, described photosensitive device is connected with described capacitance touch screen control chip, described capacitance touch screen control chip is for carrying out frequency modulation (PFM) to the first simulating signal of the sign environmental light brightness of described photosensitive device output, the first simulating signal of the sign environmental light brightness of described photosensitive device output is superimposed on a carrier wave to be transmitted, the first digital signal is isolated and be converted to described capacitance touch screen control chip by described the first simulating signal from described carrier wave again.
2. light sensing sensor as claimed in claim 1, is characterized in that, also comprises:
Infrared light-emitting device, is connected with described capacitance touch screen control chip, can be luminous under the modulation of described capacitance touch screen control chip;
When described infrared light-emitting device is closed, described capacitance touch screen control chip is modulated described photosensitive device, the first simulating signal of the sign environmental light brightness of described photosensitive device output is superimposed on a carrier wave and transmits, the first digital signal is isolated and be converted to described capacitance touch screen control chip by described the first simulating signal from described carrier wave again;
When described infrared light-emitting device is opened, under the modulation of described capacitance touch screen control chip, send infrared light, the infrared light that described infrared light-emitting device is sent is superimposed on a carrier wave and transmits; Now described photosensitive device is modulated and for responding to the described infrared light being reflected back through barrier, and producing the second simulating signal that size matches with it, described capacitance touch screen control chip is for isolating and be converted to the second digital signal by described the second simulating signal from described carrier wave.
3. light sensing sensor as claimed in claim 1, is characterized in that, described capacitance touch screen control chip is mutual capacitance touchscreens control chip, and it comprises amplifier, the demodulating unit being connected;
Described amplifier is for amplifying and processing described the first simulating signal, and described demodulating unit is for isolating and be converted to the first digital signal by described the first simulating signal from described carrier wave.
4. light sensing sensor as claimed in claim 3, it is characterized in that, described mutual capacitance touchscreens control chip also comprises the microprocessor unit being connected with described demodulating unit, for described the first digital signal is carried out linearization process or carried out format conversion.
5. the light sensing sensor as described in claim 3 or 4, is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, through described receiving cable, be connected with described amplifier, the negative electrode of described photodiode also connects a transmission channel of described mutual capacitance touchscreens control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, the anode of described photodiode is by a resistance eutral grounding, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and negative electrode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, the collector of described phototriode also connects a transmission channel of described mutual capacitance touchscreens control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, the emitter of described phototriode is by a resistance eutral grounding, and emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode connects a power end, the emitter of described phototriode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, and the emitter of described phototriode is successively by connecting a receiving cable of described mutual capacitance touchscreens control chip after a resistance, an electric capacity.
6. light sensing sensor as claimed in claim 1, is characterized in that, described capacitance touch screen control chip is self-capacitance touch screen control chip, and it comprises amplifier, the demodulating unit being connected;
Described amplifier is used for amplifying described the first simulating signal, and described demodulating unit is for isolating and be converted to the first digital signal by described the first simulating signal from described carrier wave.
7. light sensing sensor as claimed in claim 6, it is characterized in that, described self-capacitance touch screen control chip also comprises a microprocessor unit being connected with described demodulating unit, for described the first digital signal is carried out linearization process or carried out format conversion.
8. the light sensing sensor as described in claim 6 or 7, is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects power end by a resistance, a self-capacitance passage of self-capacitance touch screen control chip described in the anodic bonding of described photodiode; Or
The negative electrode of described photodiode connects power end, and the anode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode connects power end by a resistance, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip; Or
The collector of described phototriode connects power end, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance.
9. light sensing sensor as claimed in claim 2, is characterized in that, described capacitance touch screen control chip is mutual capacitance touchscreens control chip; It comprises amplifier, the demodulating unit being connected;
Described amplifier is used for amplifying described the first simulating signal, and described demodulating unit is for isolating and be converted to the first digital signal by described the first simulating signal from described carrier wave.
10. light sensing sensor as claimed in claim 9, it is characterized in that, described mutual capacitance touchscreens control chip also comprises a microprocessor unit being connected with described demodulating unit, for described the first digital signal is carried out linearization process or carried out format conversion.
11. light sensing sensors as described in claim 9 or 10, is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, through described receiving cable, be connected with described amplifier, the negative electrode of described photodiode also connects a transmission channel of described mutual capacitance touchscreens control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, the anode of described photodiode is by a resistance eutral grounding, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and negative electrode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, the collector of described phototriode also connects a transmission channel of described mutual capacitance touchscreens control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, the emitter of described phototriode is by a resistance eutral grounding, and emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode connects a power end, the emitter of described phototriode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, and the emitter of described phototriode is successively by connecting a receiving cable of described mutual capacitance touchscreens control chip after a resistance, an electric capacity;
The anode of described infrarede emitting diode connects a transmission channel or a universal I/O port of described mutual capacitance touchscreens control chip, plus earth by a resistance.
12. light sensing sensors as claimed in claim 2, is characterized in that, described capacitance touch screen control chip is self-capacitance touch screen control chip, and it comprises amplifier, the demodulating unit being connected;
Described amplifier is used for amplifying described the first simulating signal, and described demodulating unit is for isolating and be converted to the first digital signal by described the first simulating signal from described carrier wave.
13. light sensing sensors as claimed in claim 12, it is characterized in that, described self-capacitance touch screen control chip also comprises a microprocessor unit being connected with described demodulating unit, for described the first digital signal is carried out linearization process or carried out format conversion.
14. light sensing sensors as described in claim 12 or 13, is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects power end by a resistance, a self-capacitance passage of self-capacitance touch screen control chip described in the anodic bonding of described photodiode; Or
The negative electrode of described photodiode connects power end, and the anode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode connects power end by a resistance, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip; Or
The collector of described phototriode connects power end, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance;
The anode of described infrarede emitting diode connects a self-capacitance passage or a universal I/O port of described self-capacitance touch screen control chip, plus earth by a resistance.
15. 1 kinds of touch screen terminals, is characterized in that, it comprises the light sensing sensor as described in claim 1 to 14 any one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210579116.6A CN103076089B (en) | 2012-12-27 | 2012-12-27 | Light sensor and touch screen terminal |
| PCT/CN2013/085733 WO2014101552A1 (en) | 2012-12-27 | 2013-10-22 | Light sensor and touch screen terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210579116.6A CN103076089B (en) | 2012-12-27 | 2012-12-27 | Light sensor and touch screen terminal |
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| CN103076089B (en) * | 2012-12-27 | 2014-12-10 | 深圳市汇顶科技股份有限公司 | Light sensor and touch screen terminal |
| CN108700973B (en) * | 2016-12-22 | 2021-07-23 | 深圳市汇顶科技股份有限公司 | Capacitance detection circuit and electronic device |
| CN110109562A (en) * | 2018-02-01 | 2019-08-09 | 鸿富锦精密工业（深圳）有限公司 | Miniature LED touch-control display panel |
| CN108462767A (en) * | 2018-02-07 | 2018-08-28 | 维沃移动通信有限公司 | A kind of photosensitive components and mobile terminal |
| CN111681605B (en) * | 2020-07-08 | 2021-12-07 | 深圳大学 | Photosensitive photoelectric device drive control circuit and display device |
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| CN101512306A (en) * | 2006-09-06 | 2009-08-19 | 浜松光子学株式会社 | Photodetector |
| CN102595222A (en) * | 2012-03-09 | 2012-07-18 | 郭丰亮 | Digital television set top box based on LED visible light communication |
| CN102650546A (en) * | 2011-02-23 | 2012-08-29 | 夏普株式会社 | Optical sensor and electronic equipment |
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| US8970501B2 (en) * | 2007-01-03 | 2015-03-03 | Apple Inc. | Proximity and multi-touch sensor detection and demodulation |
| JP5244633B2 (en) * | 2008-02-04 | 2013-07-24 | オプテックスエフエー株式会社 | Light intensity monitor sensor and image processing system having the same |
| KR101462149B1 (en) * | 2008-05-22 | 2014-12-04 | 삼성디스플레이 주식회사 | Touch sensor, liquid crystal display panel having the same and method of sensing the same |
| CN201600668U (en) * | 2009-09-28 | 2010-10-06 | 北京汇冠新技术股份有限公司 | Touch system |
| CN201600673U (en) * | 2010-01-27 | 2010-10-06 | 比亚迪股份有限公司 | Photoinductive capacitive touch screen |
| JP2010175572A (en) * | 2010-05-21 | 2010-08-12 | Seiko Epson Corp | Light detection circuit and automatic dimming circuit |
| CN103076089B (en) * | 2012-12-27 | 2014-12-10 | 深圳市汇顶科技股份有限公司 | Light sensor and touch screen terminal |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101512306A (en) * | 2006-09-06 | 2009-08-19 | 浜松光子学株式会社 | Photodetector |
| CN102650546A (en) * | 2011-02-23 | 2012-08-29 | 夏普株式会社 | Optical sensor and electronic equipment |
| CN102595222A (en) * | 2012-03-09 | 2012-07-18 | 郭丰亮 | Digital television set top box based on LED visible light communication |
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| CN103076089A (en) | 2013-05-01 |
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