CN103076089A - Light sensor and touch screen terminal - Google Patents
Light sensor and touch screen terminal Download PDFInfo
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- CN103076089A CN103076089A CN2012105791166A CN201210579116A CN103076089A CN 103076089 A CN103076089 A CN 103076089A CN 2012105791166 A CN2012105791166 A CN 2012105791166A CN 201210579116 A CN201210579116 A CN 201210579116A CN 103076089 A CN103076089 A CN 103076089A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04106—Multi-sensing digitiser, i.e. digitiser using at least two different sensing technologies simultaneously or alternatively, e.g. for detecting pen and finger, for saving power or for improving position detection
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- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention is applicable to the technical field of light sensing, and provides a light sensor, which comprises a photosensitive device and a capacitance touch screen control chip; the photosensitive device is connected with the capacitance touch screen control chip, the capacitance touch screen control chip is used for modulating the frequency of the photosensitive device, so that a first analog signal representing the ambient brightness and outputted by the photosensitive device is superimposed onto a carrier to be transmitted, and then the capacitance touch screen control chip separates the first analog signal from the carrier to be converted into a first digital signal. In the light sensor, the capacitance touch screen control chip is used for modulating the photosensitive device, so that the frequency of the analog photosensitive signal outputted by the photosensitive device adapts to the demodulation frequency of the capacitance touch screen control chip, the light sensing is realized through the amplification function and the analog-digital conversion function of the capacitance touch screen control chip, and the photosensitive detection precision and response speed can be greatly improved through the combination of the photosensitive device and the advanced capacitance touch technology.
Description
Technical field
The invention belongs to the light field of sensing technologies, relate in particular to a kind of light sensing sensor and touch screen terminal.
Background technology
Present light sensing technology adopts 3 kinds of modes, the first as shown in Figure 1, the light-inductive diode or triode, the periphery adds amplifies circuit and analog to digital conversion circuit, realizes the light sensing digital quantization; The second as shown in Figure 2, the integrated amplifier of photosensitive device own, outputting analog signal cooperates peripheral analog to digital conversion circuit to realize the light sensing digital quantization again; The third as shown in Figure 3, the integrated amplifier of photosensitive device own and analog to digital conversion circuit are directly exported the digital quantization signal.
The range of application of this light sensing technology is more and more extensive, not only can be applicable to lighting field, and along with the variation of electronic product function, also is applied to more and more on the end product to realize different functions.For example on mobile communication terminal, the variation that can be used for ambient light realizes automatically adjusting the backlight illumination of mobile communication terminal, for the user provides better use impression.
Summary of the invention
First technical matters to be solved by this invention is to provide a kind of light sensing sensor.
The present invention is achieved in that a kind of light sensing sensor, comprises photosensitive device, also comprises a capacitance touch screen control chip; Described photosensitive device is connected with described capacitance touch screen control chip, described capacitance touch screen control chip is used for described photosensitive device is carried out frequency modulation (PFM), the first simulating signal of the sign environmental light brightness of described photosensitive device output is superimposed on the carrier wave transmits, the first digital signal is isolated and be converted to described capacitance touch screen control chip with described the first simulating signal from described carrier wave again.
Second technical matters to be solved by this invention is to provide a kind of touch screen terminal, and it comprises aforesaid light sensing sensor.
Among the present invention, use the capacitance touch screen control chip that photosensitive device is modulated, so that the frequency of the simulation photoreceptor signal of photosensitive device output and the frequency, demodulation frequency of capacitance touch screen control chip adapt, the amplification, the analog-digital conversion function that itself have by the capacitance touch screen control chip realize light sensing, and photosensitive device combines with advanced person's capacitance touching control technology can promote precision and the response speed of photosensitive detection greatly.
Description of drawings
Fig. 1, Fig. 2, Fig. 3 are the schematic diagrams of three kinds of light sensing technology providing of prior art;
Fig. 4 is a kind of structure principle chart provided by the invention;
Fig. 5 is the structure principle chart of another kind of light sensing sensor provided by the invention;
Fig. 6 A, Fig. 6 B, Fig. 6 C, Fig. 6 D are four kinds of circuit diagrams that photosensitive device provided by the invention adopts phototriode, the light sensing sensor when the capacitance touch screen control chip adopts the mutual capacitance touchscreens control chip;
Fig. 7 A, Fig. 7 B, Fig. 7 C, Fig. 7 D are four kinds of circuit diagrams that photosensitive device provided by the invention adopts photodiode, the light sensing sensor when the capacitance touch screen control chip adopts the mutual capacitance touchscreens control chip;
Fig. 8 A, Fig. 8 B, Fig. 8 C are three kinds of circuit diagrams that photosensitive device provided by the invention adopts phototriode, the light sensing sensor when the capacitance touch screen control chip adopts the self-capacitance touch screen control chip;
Fig. 9 A, Fig. 9 B, Fig. 9 C are three kinds of circuit diagrams that photosensitive device provided by the invention adopts photodiode, the light sensing sensor when the capacitance touch screen control chip adopts the self-capacitance touch screen control chip;
A kind of figure of optimizing structure when Figure 10, Figure 11 are respectively employing mutual capacitance touchscreens control chip provided by the invention and self-capacitance touch screen control chip;
Figure 12, Figure 13 are respectively the theory diagrams that employing mutual capacitance touchscreens control chip provided by the invention and self-capacitance touch screen control chip realize approaching induction.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
The present invention passes through the components and parts of multiplexing capacitance touch screen control chip, photosensitive device is combined with the capacitance touching control chip realize light sensing and quantize output.
With reference to Fig. 4, light sensing sensor provided by the invention comprises photosensitive device 1 and capacitance touch screen control chip 2, this capacitance touch screen control chip 2 can be used on the capacitance touch screen terminal, is mainly used in the touch operation on the touch-screen is responded to and made corresponding steering order.Among the present invention, photosensitive device 1 connects capacitance touch screen control chip 2, photosensitive device 1 is used for the sensitive context luminance brightness, produce the first simulating signal and output according to environmental light brightness, and capacitance touch screen control chip 2 is used for this first simulating signal amplification and is converted to the first digital signal.The frequency ratio of considering the environment photosensor signal is lower, and the frequency, demodulation frequency of capacitance touch screen control chip 2 is higher, capacitance touch screen control chip 2 can't direct-detection to the first simulating signal, capacitance touch screen control chip 2 also is used for photosensitive device 1 is carried out frequency modulation (PFM) among the present invention, make photosensitive device 1 output characterize the first simulating signal of environmental light brightness, this first simulating signal is superimposed on the carrier wave to be transmitted, the frequency of the first simulating signal and the frequency, demodulation frequency of capacitance touch screen control chip 2 are adapted, simultaneously also be conducive to provide antijamming capability, 2 pairs of the first simulating signals of capacitance touch screen control chip amplify to process at first to be needed the first simulating signal is separated from carrier wave before.
As another embodiment of the present invention, if the luminescent devices such as above-mentioned light sensing sensor and infrared-emitting diode are combined functions such as also can realizing approaching induction, forms that a surround lighting is responded to and near induction pick-up.As shown in Figure 5, this light sensing sensor also comprises infrared light-emitting device 3, is connected with capacitance touch screen control chip 2, can be luminous under the modulation of capacitance touch screen control chip 2.This sensor that possesses two kinds of inducing functions has two kinds of mode of operations, under the first pattern, carry out the surround lighting detection according to the simulating signal that photosensitive device produces, the simulating signal that is produced by reflected light according to photosensitive device under the second pattern is carried out distance and is detected.Specific as follows: the first pattern, infrared light-emitting device 3 is closed, capacitance touch screen control chip 2 light modulated sensing devices 1, the first simulating signal of the sign environmental light brightness of photosensitive device 1 output is superimposed on the carrier wave transmits, the first digital signal is isolated and be converted to capacitance touch screen control chip 2 with the first simulating signal from carrier wave again.The second pattern, infrared light-emitting device 3 sends infrared light when opening under the modulation of capacitance touch screen control chip 2, and the infrared light that infrared light-emitting device 3 is sent is superimposed on the carrier wave and transmits; This moment, photosensitive device 1 was modulated and be used for the infrared light that induction is reflected back through barrier, and produced the second simulating signal that size with it is complementary, and the second digital signal is isolated and be converted to capacitance touch screen control chip 2 to the second simulating signal from carrier wave.
For mutual capacitance (projection-type) touch-screen control chip, shown in Fig. 6 A-Fig. 6 D, 7A-Fig. 7 D, adopt 1 receiving cable RX and 1 transmission channel TX or general purpose I/O port GPIO to realize light sensing, utilize TX or GPIO to modulate the signal of photosensitive diode or triode, receiving cable RX is for detection of input, and transmission channel TX and general purpose I/O port GPIO are used for the output of modulation signal.Adopt again in addition 1 independent transmission channel TX or GPIO to drive infrarede emitting diode, cooperate light sensing to realize near inducing function.Photosensitive device is phototriode Q1 among Fig. 6 A to Fig. 6 C, there are four kinds with the connected mode of mutual capacitance touchscreens control chip 2, mode one (Fig. 6 A): the collector of phototriode Q1 connects a receiving cable RX of mutual capacitance touchscreens control chip by a capacitor C, the collector of phototriode Q1 also connects a transmission channel of mutual capacitance touchscreens control chip, grounded emitter by a resistance R 1.Mode two (Fig. 6 B), the collector of phototriode directly connects a transmission channel of mutual capacitance touchscreens control chip, the emitter of phototriode is by a resistance eutral grounding, and emitter also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity.Mode three (Fig. 6 C): the collector of phototriode connects a power end VDD, the emitter of phototriode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance, emitter also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity; Mode four (Fig. 6 D), the collector of phototriode directly connects a transmission channel of mutual capacitance touchscreens control chip, and the emitter of phototriode is successively by connecting a receiving cable of mutual capacitance touchscreens control chip behind a resistance, the electric capacity.Photosensitive device is photodiode D1 among Fig. 7 A to Fig. 7 D, with the annexation of mutual capacitance touchscreens control chip 2 four kinds of modes are arranged equally, mode 1(Fig. 7 A), the negative electrode of photodiode D1 connects a receiving cable RX of mutual capacitance touchscreens control chip by a capacitor C, be connected with amplifier through receiving cable, the negative electrode of photodiode D1 also connects a transmission channel of mutual capacitance touchscreens control chip, the plus earth of photodiode D1 by a resistance R 3.Mode two (Fig. 7 B), the negative electrode of photodiode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance R 3, the anode of photodiode is by a resistance eutral grounding, and anode also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity.Mode three (Fig. 7 C): the negative electrode of photodiode connects power end VDD, and anode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance R 3, and anode also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity.Mode four (Fig. 7 D): the negative electrode of photodiode connects power end VDD, and negative electrode also connects a receiving cable of mutual capacitance touchscreens control chip by an electric capacity, and anode connects a transmission channel of mutual capacitance touchscreens control chip by a resistance R 3.Infrared light-emitting device selects infrarede emitting diode D2 to realize among Fig. 6, Fig. 7, and the anode of infrarede emitting diode D2 connects a transmission channel TX or a general purpose I/O port of mutual capacitance touchscreens control chip, plus earth by a resistance R 2.
Receiving cable RX, transmission channel TX among Fig. 6, Fig. 7 all are pins of mutual capacitance touchscreens control chip, are respectively applied to receive the transmission of touch operation signal and steering order, and GPIO then represents the general purpose I/O port of mutual capacitance touchscreens control chip.
For the self-capacitance touch screen control chip, shown in Fig. 8 A-Fig. 8 C, Fig. 9 A-Fig. 9 C, adopt self-capacitance channel C HX access photodiode or triode, realize that environmental light brightness detects.Adopt in addition 1 self-capacitance channel C HX or GPIO to drive infrarede emitting diode, cooperate light sensing can realize approaching the induction physical layer function.Photosensitive device 1 is phototriode Q1 among Fig. 8 A to Fig. 8 C, with the annexation of mutual capacitance touchscreens control chip 2 three kinds of modes are arranged, mode one (Fig. 8 A), the collector of phototriode Q2 connects a self-capacitance passage of self-capacitance touch screen control chip, the grounded emitter of phototriode Q2 by a resistance R 4.Mode two (Fig. 8 B), the collector of phototriode Q2 connects power end VDD by a resistance R 4, and the emitter of phototriode Q2 connects a self-capacitance passage of self-capacitance touch screen control chip.Mode three (Fig. 8 C), the collector of phototriode Q2 connects power end VDD, and the emitter of phototriode Q2 connects a self-capacitance passage of self-capacitance touch screen control chip by a resistance R 4.Photosensitive device 1 is photodiode D3 among Fig. 9 A to Fig. 9 C, with the annexation of self-capacitance touch screen control chip 2 three kinds of modes are arranged, mode one (Fig. 9 A), its negative electrode connect a self-capacitance passage of self-capacitance touch screen control chip, the plus earth of photodiode D3 by a resistance R 5.Mode two (Fig. 9 B): the negative electrode of photodiode connects power end VDD, a self-capacitance passage of the anodic bonding self-capacitance touch screen control chip of photodiode D3 by a resistance R 5.Mode three (Fig. 9 C): the negative electrode of photodiode D3 connects power end VDD, and the anode of photodiode connects a self-capacitance passage of self-capacitance touch screen control chip by a resistance R 5.Infrared light-emitting device selects infrarede emitting diode D4 to realize among Fig. 8, Fig. 9, and the anode of infrarede emitting diode D4 connects a self-capacitance passage or a general purpose I/O port of self-capacitance touch screen control chip, plus earth by a resistance R 6.
The basic principle of Fig. 6 to Fig. 9 is: under direct current supply voltage, photodiode D1 or phototriode Q1 output current change along with the variation of induction light intensity, because the variation of light is comparatively slow, be converted to the normally signal of lower frequency (less than hundreds of Hz, even being similar to direct current signal) of electric signal.
No matter capacitance touch screen control chip 2 is mutual capacitance technology or self-capacitance technology, drive or exciting signal frequency all higher (usually interval at tens KHz to 1MHz), with the electric signal of photodiode or triode output not in same signal band.For the signal of photodiode or triode output is modulated in the detectable chip frequency band range of capacitance touch screen chip, adopt in the technique scheme with regard to needs and by mutual capacitance or self-capacitance touch screen control chip photodiode or phototriode are modulated.
The light sensing principle of mutual capacitance and self-capacitance is respectively such as Figure 10, shown in Figure 11, wherein the mutual capacitance touchscreens control chip comprises amplifier and the demodulating unit that is connected at least with the self-capacitance touch screen control chip, also can comprise microprocessor unit, the modulation signal of different is self-capacitance exports photosensitive device 1 to by amplifier, and the modulation signal of mutual capacitance is exported by transmission channel.Wherein amplifier is used for amplifying the first simulating signal, and demodulating unit is used for the first digital signal is isolated and be converted to the first simulating signal from carrier wave, and microprocessor unit is used for the first digital signal is carried out linearization process or carried out format conversion.
Figure 12, Figure 13 have further shown the near field principle of induction of mutual capacitance and self-capacitance, the realization principle of infrared proximity induction is as follows: infrared light-emitting device 3 emission Infrared, when object is close, Infrared is reflected back, photosensitive device 1 receives the light of object reflection, realizes the detection of adjusting the distance according to the size of signal.
Similarly, infrarede emitting diode transmit normally low frequency signals or direct current signal, the driving of capacitance touch screen control chip or exciting signal frequency be higher (usually interval at tens KHz to 1MHz) all, so adopt TX (mutual capacitance), CHX (self-capacitance) or GPIO modulated red UV light-emitting diode.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. light sensing sensor, it is characterized in that, comprise photosensitive device and capacitance touch screen control chip, described photosensitive device is connected with described capacitance touch screen control chip, described capacitance touch screen control chip is used for the first simulating signal of the sign environmental light brightness of described photosensitive device output is carried out frequency modulation (PFM), the first simulating signal of the sign environmental light brightness of described photosensitive device output is superimposed on the carrier wave transmits, the first digital signal is isolated and be converted to described capacitance touch screen control chip with described the first simulating signal from described carrier wave again.
2. light sensing sensor as claimed in claim 1 is characterized in that, also comprises:
Infrared light-emitting device is connected with described capacitance touch screen control chip, can be luminous under the modulation of described capacitance touch screen control chip;
When described infrared light-emitting device is closed, described capacitance touch screen control chip is modulated described photosensitive device, the first simulating signal of the sign environmental light brightness of described photosensitive device output is superimposed on the carrier wave transmits, the first digital signal is isolated and be converted to described capacitance touch screen control chip with described the first simulating signal from described carrier wave again;
Send infrared light when described infrared light-emitting device is opened under the modulation of described capacitance touch screen control chip, the infrared light that described infrared light-emitting device is sent is superimposed on the carrier wave and transmits; This moment, described photosensitive device was modulated and be used for the described infrared light that induction is reflected back through barrier, and producing with it big or small the second simulating signal that is complementary, described capacitance touch screen control chip is used for the second digital signal is isolated and be converted to described the second simulating signal from described carrier wave.
3. light sensing sensor as claimed in claim 1 is characterized in that, described capacitance touch screen control chip is the mutual capacitance touchscreens control chip, and it comprises amplifier, the demodulating unit that is connected;
Described amplifier is used for amplifying and processing described the first simulating signal, and described demodulating unit is used for the first digital signal is isolated and be converted to described the first simulating signal from described carrier wave.
4. light sensing sensor as claimed in claim 3, it is characterized in that, described mutual capacitance touchscreens control chip also comprises the microprocessor unit that is connected with described demodulating unit, is used for described the first digital signal is carried out linearization process or carried out format conversion.
5. such as claim 3 or 4 described light sensing sensors, it is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, be connected with described amplifier through described receiving cable, the negative electrode of described photodiode also connects a transmission channel of described mutual capacitance touchscreens control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, the anode of described photodiode is by a resistance eutral grounding, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and negative electrode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, the collector of described phototriode also connects a transmission channel of described mutual capacitance touchscreens control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, the emitter of described phototriode is by a resistance eutral grounding, and emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode connects a power end, the emitter of described phototriode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, and the emitter of described phototriode is successively by connecting a receiving cable of described mutual capacitance touchscreens control chip behind a resistance, the electric capacity.
6. light sensing sensor as claimed in claim 1 is characterized in that, described capacitance touch screen control chip is the self-capacitance touch screen control chip, and it comprises amplifier, the demodulating unit that is connected;
Described amplifier is used for amplifying described the first simulating signal, and described demodulating unit is used for the first digital signal is isolated and be converted to described the first simulating signal from described carrier wave.
7. light sensing sensor as claimed in claim 6, it is characterized in that, described self-capacitance touch screen control chip also comprises a microprocessor unit that is connected with described demodulating unit, is used for described the first digital signal is carried out linearization process or carried out format conversion.
8. such as claim 6 or 7 described light sensing sensors, it is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects power end, a self-capacitance passage of the described self-capacitance touch screen control chip of the anodic bonding of described photodiode by a resistance; Or
The negative electrode of described photodiode connects power end, and the anode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode connects power end by a resistance, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip; Or
The collector of described phototriode connects power end, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance.
9. light sensing sensor as claimed in claim 2 is characterized in that, described capacitance touch screen control chip is the mutual capacitance touchscreens control chip; It comprises amplifier, the demodulating unit that is connected;
Described amplifier is used for amplifying described the first simulating signal, and described demodulating unit is used for the first digital signal is isolated and be converted to described the first simulating signal from described carrier wave.
10. light sensing sensor as claimed in claim 9, it is characterized in that, described mutual capacitance touchscreens control chip also comprises a microprocessor unit that is connected with described demodulating unit, is used for described the first digital signal is carried out linearization process or carried out format conversion.
11. such as claim 9 or 10 described light sensing sensors, it is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, be connected with described amplifier through described receiving cable, the negative electrode of described photodiode also connects a transmission channel of described mutual capacitance touchscreens control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, the anode of described photodiode is by a resistance eutral grounding, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, and anode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The negative electrode of described photodiode connects power end, and negative electrode also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, and anode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity, the collector of described phototriode also connects a transmission channel of described mutual capacitance touchscreens control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, the emitter of described phototriode is by a resistance eutral grounding, and emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode connects a power end, the emitter of described phototriode connects a transmission channel of described mutual capacitance touchscreens control chip by a resistance, emitter also connects a receiving cable of described mutual capacitance touchscreens control chip by an electric capacity; Or
The collector of described phototriode directly connects a transmission channel of described mutual capacitance touchscreens control chip, and the emitter of described phototriode is successively by connecting a receiving cable of described mutual capacitance touchscreens control chip behind a resistance, the electric capacity;
The anode of described infrarede emitting diode connects a transmission channel or a general purpose I/O port of described mutual capacitance touchscreens control chip, plus earth by a resistance.
12. light sensing sensor as claimed in claim 2 is characterized in that, described capacitance touch screen control chip is the self-capacitance touch screen control chip, and it comprises amplifier, the demodulating unit that is connected;
Described amplifier is used for amplifying described the first simulating signal, and described demodulating unit is used for the first digital signal is isolated and be converted to described the first simulating signal from described carrier wave.
13. light sensing sensor as claimed in claim 12, it is characterized in that, described self-capacitance touch screen control chip also comprises a microprocessor unit that is connected with described demodulating unit, is used for described the first digital signal is carried out linearization process or carried out format conversion.
14. such as claim 12 or 13 described light sensing sensors, it is characterized in that, described photosensitive device is photodiode or phototriode;
The annexation of described photodiode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The negative electrode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip, the plus earth of described photodiode by a resistance; Or
The negative electrode of described photodiode connects power end, a self-capacitance passage of the described self-capacitance touch screen control chip of the anodic bonding of described photodiode by a resistance; Or
The negative electrode of described photodiode connects power end, and the anode of described photodiode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance;
The annexation of described phototriode and described mutual capacitance touchscreens control chip is any of following several connected modes:
The collector of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip, the grounded emitter of described phototriode by a resistance; Or
The collector of described phototriode connects power end by a resistance, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip; Or
The collector of described phototriode connects power end, and the emitter of described phototriode connects a self-capacitance passage of described self-capacitance touch screen control chip by a resistance;
The anode of described infrarede emitting diode connects a self-capacitance passage or a general purpose I O port of described self-capacitance touch screen control chip, plus earth by a resistance.
15. a touch screen terminal is characterized in that, it comprises such as each described light sensing sensor of claim 1 to 14.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210579116.6A CN103076089B (en) | 2012-12-27 | 2012-12-27 | Light sensor and touch screen terminal |
| PCT/CN2013/085733 WO2014101552A1 (en) | 2012-12-27 | 2013-10-22 | Light sensor and touch screen terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210579116.6A CN103076089B (en) | 2012-12-27 | 2012-12-27 | Light sensor and touch screen terminal |
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| CN103076089A true CN103076089A (en) | 2013-05-01 |
| CN103076089B CN103076089B (en) | 2014-12-10 |
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| WO2014101552A1 (en) * | 2012-12-27 | 2014-07-03 | 深圳市汇顶科技股份有限公司 | Light sensor and touch screen terminal |
| CN108462767A (en) * | 2018-02-07 | 2018-08-28 | 维沃移动通信有限公司 | A kind of photosensitive components and mobile terminal |
| CN108700973A (en) * | 2016-12-22 | 2018-10-23 | 深圳市汇顶科技股份有限公司 | Capacitive detection circuit and electronic device |
| CN110109562A (en) * | 2018-02-01 | 2019-08-09 | 鸿富锦精密工业（深圳）有限公司 | Miniature LED touch-control display panel |
| CN111681605A (en) * | 2020-07-08 | 2020-09-18 | 深圳大学 | Photosensitive photoelectric device drive control circuit and display device |
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| JP2009210565A (en) * | 2008-02-04 | 2009-09-17 | Optex Fa Co Ltd | Light quantity monitor sensor and image processing system equipped with this |
| JP2010175572A (en) * | 2010-05-21 | 2010-08-12 | Seiko Epson Corp | Light detection circuit and automatic dimming circuit |
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| CN108700973A (en) * | 2016-12-22 | 2018-10-23 | 深圳市汇顶科技股份有限公司 | Capacitive detection circuit and electronic device |
| CN110109562A (en) * | 2018-02-01 | 2019-08-09 | 鸿富锦精密工业（深圳）有限公司 | Miniature LED touch-control display panel |
| CN108462767A (en) * | 2018-02-07 | 2018-08-28 | 维沃移动通信有限公司 | A kind of photosensitive components and mobile terminal |
| CN111681605A (en) * | 2020-07-08 | 2020-09-18 | 深圳大学 | Photosensitive photoelectric device drive control circuit and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103076089B (en) | 2014-12-10 |
| WO2014101552A1 (en) | 2014-07-03 |
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