CN103074678A - 一种单晶石墨烯的制备方法 - Google Patents
一种单晶石墨烯的制备方法 Download PDFInfo
- Publication number
- CN103074678A CN103074678A CN2013100429258A CN201310042925A CN103074678A CN 103074678 A CN103074678 A CN 103074678A CN 2013100429258 A CN2013100429258 A CN 2013100429258A CN 201310042925 A CN201310042925 A CN 201310042925A CN 103074678 A CN103074678 A CN 103074678A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal graphene
- graphene
- layer
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013100429258A CN103074678A (zh) | 2013-02-04 | 2013-02-04 | 一种单晶石墨烯的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013100429258A CN103074678A (zh) | 2013-02-04 | 2013-02-04 | 一种单晶石墨烯的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103074678A true CN103074678A (zh) | 2013-05-01 |
Family
ID=48151370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013100429258A Pending CN103074678A (zh) | 2013-02-04 | 2013-02-04 | 一种单晶石墨烯的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103074678A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105892102A (zh) * | 2014-11-28 | 2016-08-24 | 中国计量学院 | 基于石墨烯的太赫兹波透射型调制器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102409399A (zh) * | 2011-11-04 | 2012-04-11 | 南京航空航天大学 | 一种高质量石墨烯的制法 |
CN102633258A (zh) * | 2012-05-10 | 2012-08-15 | 中国科学院上海微系统与信息技术研究所 | 一种无需衬底转移的制备石墨烯的方法 |
CN102849961A (zh) * | 2011-07-01 | 2013-01-02 | 中央研究院 | 在基板上成长碳薄膜或无机材料薄膜的方法 |
-
2013
- 2013-02-04 CN CN2013100429258A patent/CN103074678A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102849961A (zh) * | 2011-07-01 | 2013-01-02 | 中央研究院 | 在基板上成长碳薄膜或无机材料薄膜的方法 |
CN102409399A (zh) * | 2011-11-04 | 2012-04-11 | 南京航空航天大学 | 一种高质量石墨烯的制法 |
CN102633258A (zh) * | 2012-05-10 | 2012-08-15 | 中国科学院上海微系统与信息技术研究所 | 一种无需衬底转移的制备石墨烯的方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105892102A (zh) * | 2014-11-28 | 2016-08-24 | 中国计量学院 | 基于石墨烯的太赫兹波透射型调制器 |
CN105892102B (zh) * | 2014-11-28 | 2020-10-16 | 中国计量大学 | 基于石墨烯的太赫兹波透射型调制器 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ai et al. | Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structure | |
JP5731502B2 (ja) | ヘテロエピタキシャル成長によるグラフェンの広い領域の堆積およびそれを含む生成物 | |
Wenyi et al. | Influence of growth process on the structural, optical and electrical properties of CBD-CdS films | |
JP5714012B2 (ja) | ヘテロエピタキシャル成長したグラフェンの剥離および転写技術およびそれを含む生成物 | |
KR101968056B1 (ko) | 그래핀 기반 층을 포함하는 전자 장치 및 그 제조방법 | |
EP2584073B1 (en) | Method of doping a large area graphene thin film grown by heteroepitaxy | |
TWI526559B (zh) | 藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法 | |
Wu et al. | Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films | |
CN102496421A (zh) | 大面积柔性导电薄膜的制备方法 | |
Yong et al. | Pulsed laser deposition of indium tin oxide nanowires in argon and helium | |
Kim et al. | Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters | |
Wang et al. | Simple fabrication and improved photoresponse of ZnO–Cu2O core–shell heterojunction nanorod arrays | |
CN104313684A (zh) | 一种制备六方氮化硼二维原子晶体的方法 | |
CN103194795A (zh) | 一种低成本制备大尺寸单晶石墨烯的方法 | |
Zhou et al. | Effects of deposition temperature on the performance of CdS films with chemical bath deposition | |
Sun et al. | Electrochemical bubbling transfer of graphene using a polymer support with encapsulated air gap as permeation stopping layer | |
Li et al. | Texture control and growth mechanism of WSe2 film prepared by rapid selenization of W film | |
Ouyang et al. | The relationships between electronic properties and microstructure of Cu (In, Ga) Se2 films prepared by sputtering from a quaternary target | |
CN103074678A (zh) | 一种单晶石墨烯的制备方法 | |
Qi et al. | The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu/mica | |
Zhang et al. | Preparation and characterization of WSe2 nano-films by magnetron sputtering and vacuum selenization | |
Shi et al. | A symmetrical bi-electrode electrochemical technique for high-efficiency transfer of CVD-grown graphene | |
Song et al. | Preparation of AlSb thin films by magnetron sputtering technology and its deliquescence mechanism | |
Si et al. | Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector | |
Lin et al. | Leading nano-Ag particles on the textured seed layer to enhance the optoelectronic properties of Al–doped ZnO layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ZHEJIANG UNIVERSITY Free format text: FORMER OWNER: HANGZHOU GELANFENG NANO TECHNOLOGY CO.,LTD. Effective date: 20141023 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20141023 Address after: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Applicant after: Zhejiang University Address before: Room 428, C building, No. 525 Xixi Road, Xihu District, Zhejiang, Hangzhou 310027, China Applicant before: Hangzhou Gelanfeng Nanometre Technology Co., Ltd. |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130501 |