CN103074675A - Gas system - Google Patents
Gas system Download PDFInfo
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- CN103074675A CN103074675A CN 201110409679 CN201110409679A CN103074675A CN 103074675 A CN103074675 A CN 103074675A CN 201110409679 CN201110409679 CN 201110409679 CN 201110409679 A CN201110409679 A CN 201110409679A CN 103074675 A CN103074675 A CN 103074675A
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Abstract
The embodiment of the invention provides a gas system comprising a first gas pipeline provided with a first gas control unit, a second gas pipeline provided with a second gas control unit, and a gas pressure balance control unit connected across the first gas pipeline and the second gas pipeline. The first gas control unit is used for controlling gas flow rate or pressure in the first gas pipeline. The second gas control unit is used for controlling gas flow rate or pressure in the second gas pipeline. The gas pressure balance control unit is used for generating pressure control signals which serve as input signals of the second gas control unit. Therefore, the gas pressures in the second gas pipeline is balanced with that in the first gas pipeline, such that the gas pressures in the first gas pipeline and the second gas pipeline are substantially prevented from fluctuation. Source gas concentration and quality stability in a reaction chamber are improved, epitaxial process stability and repeatability are improved, and the quality of formed epitaxial material layer is improved.
Description
Technical field
The present invention relates to chemical vapour deposition (CVD) technical field, particularly for the gas system of chemical vapour deposition.
Background technology
MOCVD (Metal-Organic Chemical Vapor Deposition) technique is a kind of Novel air phase epitaxy growing technology that grows up on the basis of vapor phase epitaxial growth (VPE).It is with the source material as the crystal growth such as the hydride of the organic compound of III family, II family element and V, VI family element, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of pedestal, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.
The below describes the principle of existing MOCVD technique.Particularly, please refer to the structural representation of existing MOCVD equipment shown in Figure 1.
Be formed with the spray header 11 and the pedestal 12 that are oppositely arranged in the epitaxial deposition chamber 10.Described gas feed unit can be spray header (Showerhead, SH), in this spray header a plurality of apertures can be set.Usually place multi-disc substrate 121 on the described pedestal 12, the material of described substrate 121 is generally expensive sapphire.The below of described pedestal 12 also is formed with heating unit 13, and 13 pairs of described substrates 121 of described heating unit heat, so that the temperature on described substrate 121 surfaces reaches the temperature that epitaxy technique needs.
When carrying out MOCVD technique, source gas enters the conversion zone (position on the surface of close substrate 121) of substrate 12 tops from the aperture of spray header 11, described substrate 121 is owing to the thermal radiation effect of heating unit 13 has certain temperature, thereby this temperature is so that carry out chemical reaction between the gas of source, thereby forms the epitaxial material layers on substrate 121 surfaces.At least comprise one deck luminescent layer in the described epitaxial material layer, described luminescent layer can send light under the driving of electric current.
Usually, after MOCVD technique was finished, the substrate that needs to be formed with the epitaxial material layer took out from the epitaxial deposition chamber of MOCVD equipment, then the outside of MOCVD equipment to substrate on so that the characteristic parameter of epitaxial material layer test.
Through test, find that the stability of existing epitaxy technique and repeatability are bad in practice, the quality of the epitaxial material layer of formation can not satisfy the requirement of application.
Summary of the invention
The problem that the embodiment of the invention solves has provided a kind of new gas system, the gas pressure balancing of the two-way gas piping of this gas system in the process that different gas sources is switched, thereby the concentration of source gas and the stablizing of quality that are conducive to the pressure in the gas source and enter reaction chamber, improve the stable and repeated of epitaxy technique, improved the quality of the epitaxial material layer that forms.
For addressing the above problem, the embodiment of the invention has been carried a kind of gas system, comprising:
The first gas piping is provided with the first gas control unit, and described the first gas control unit is used for controlling gas flow or the gaseous tension on described the first gas piping;
The second gas piping is provided with the second gas control unit, and described the second gas control unit is used for controlling the gaseous tension on described the second gas piping;
The gas pressure balancing control unit, be connected across between described the first gas piping and the second gas piping, be used for gathering the signal of described the first gas control unit and the second gas control unit, and according to described signal acquisition pressure controling signal, described pressure controling signal is as the input signal of the second gas control unit.
Alternatively, described the first gas control unit is mass flow controller or pressure controller.
Alternatively, described the second gas control unit comprises mass flow controller and the pressure controller of series connection, and described mass flow controller is positioned at the upstream of described pressure controller, and described pressure controling signal is as the input signal of described pressure controller.
Alternatively, described the second gas control unit also comprises: partial pressure unit, described partial pressure unit and described pressure controller are parallel on described the second gas piping, described partial pressure unit is used for when the pressure of described the second gas piping surpasses the range of regulation of described pressure controller, with the portion gas shunting of the second gas piping.
Alternatively, described the second gas control unit also comprises: the flow range setup unit, be used for based on described pressure controling signal, regulate the range of the mass flow controller on described the second gas piping, so that described range is consistent with the range of regulation of described pressure controller.
Alternatively, described the second gas control unit is mass flow controller.
Alternatively, described gas system is applied to chemical vapor depsotition equipment.
Alternatively, described gas pressure balancing control unit is differential pressure type film rule.
Compared with prior art, the embodiment of the invention has the following advantages:
The embodiment of the invention arranges the gas pressure balancing control unit in described gas system, regulate the gaseous tension of the second gas piping by described gas pressure balancing control unit, so that the gaseous tension of the gaseous tension of described the second gas piping and described the first gas piping keeps balance, thereby so that the first gas piping and the second gas piping are when switching, the gaseous tension of this two-way gas piping can not fluctuate substantially, thereby the concentration of source gas and the stablizing of quality that are conducive to the pressure in the gas source and enter reaction chamber, improve the stable and repeated of epitaxy technique, improved the quality of the epitaxial material layer that forms;
Further optimally, described the second gas control unit comprises mass flow controller and the pressure controller of series connection, described mass flow controller is positioned at the upstream of described pressure controller, and the pressure controling signal of described gas pressure balancing control unit is as the input signal of described pressure controller.
Description of drawings
Fig. 1 is the structural representation of existing MOCVD equipment;
Fig. 2 is the structural representation of the gas system of first embodiment of the invention;
Fig. 3 is the structural representation of the gas system of second embodiment of the invention.
Embodiment
The stability of existing MOCVD technique and repeatability are bad, the epitaxial material layer of formation of low quality.Study discovery through the contriver, because the pressure imbalance of two-way gas piping in the process that different gas sources is switched, the pressure surge of source gas in the gas handoff procedure of source, the air-flow that enters reaction chamber are unstable, cause the unstable of the concentration of gas of the MOCVD that participates in reaction and quality, thereby affected the stability of epitaxial material layer and repeated.
In order to address the above problem, the present invention proposes a kind of gas system, the gas pressure balancing control unit is set in this gas system, regulate the gaseous tension of the second gas piping by described gas pressure balancing control unit, so that the gaseous tension of the gaseous tension of described the second gas piping and described the first gas piping keeps balance, thereby so that the first gas piping and the second gas piping are when switching, the gaseous tension of this two-way gas piping can not fluctuate substantially, be conducive to eliminate the pressure surge of source gas in the gas handoff procedure of source, so that it is more stable to enter the air-flow of reaction chamber, improve the concentration of gas of the MOCVD that participates in reaction and the stability of quality, be conducive to improve the stability of epitaxial material layer and repeated.
Below in conjunction with specific embodiments technical scheme of the present invention is described.For technical scheme of the present invention is described better, please in conjunction with the structural representation of the gas system of first embodiment of the invention shown in Figure 2.Described gas system comprises:
The first gas piping 21, be provided with the first gas control unit 15, described the first gas control unit 15 is used for controlling gas flow or the gaseous tension on described the first gas piping 21, one end of described the first gas piping 21 is connected with the first purge gas source 11, the other end is connected with processing chamber 19, described the first purging source 11 is used for providing sweeping gas, and described sweeping gas flows to processing chamber 19 from the first purge gas source 11 through the first gas control unit 15;
The second gas piping 22, be provided with the second gas control unit 16, described the second gas control unit 16 is used for controlling the gaseous tension on described the second gas piping 22, so that the gas pressure balancing of the gaseous tension of described the second gas piping 22 and described the first gas piping 21, one end of described the second gas piping 22 is connected with the second purge gas source 12, the other end is connected with pump 20, described the second purging source 12 is used for providing sweeping gas, and described sweeping gas flows to pump 20 from described the second purging source 12 through the second gas control unit 16;
Gas pressure balancing control unit 17, be connected across between described the first gas piping 21 and the second gas piping 22, be used for gathering the signal of described the first gas control unit 15 and the second gas control unit 16, and according to described signal acquisition pressure controling signal, described pressure controling signal is as the input signal of the second gas control unit 16.
As one embodiment of the present of invention, described gas system is applied to MOCVD equipment.Certainly, gas system of the present invention can also be used other chemical vapor depsotition equipment, this equipment claimed adopts two-way even multipath gas more, the two-way of this equipment even more need to keep pressure equilibrium between the multipath gas, such as, gas system of the present invention can be used for boiler tube, LPCVD, CVD, PEDVD etc.
As an embodiment, described the first gas piping 21 be connected gas piping 22 and also connect respectively the first process gas valve 23 and the second process gas valve 24, described the first process gas valve 23 and the second process gas valve 24 are T-valve.As shown in the figure, two ports of described the first process gas valve 23 are connected with the second gas piping 22 with the first gas piping 21, the 3rd port is connected with the first process gas source 13, two ports of described the second process gas valve 24 are connected with the second gas piping 22 with the first gas piping 21, the 3rd port is connected with the second process gas source 14, described the first process gas source 13 and the second process gas source 14 are used for providing source gas, in the present embodiment, described source gas is as the reactant gases of MOCVD technique.
The sweeping gas that described the first purge gas source 11 of the embodiment of the invention and the second purge gas source 12 provide can be identical, also can be different.As an embodiment, described the first purge gas source 11 is identical with the sweeping gas that the second purge gas source 12 provides, and described sweeping gas is as the vector gas of source gas.As an embodiment, the sweeping gas that described the first purge gas source 11 and the second purge gas source 12 provide can be nitrogen, hydrogen or both mixing.
In one embodiment of the invention, described the first gas control unit 15 can be mass flow controller (Mass Flow Controller, MFC), and it is used for controlling the flow of the gas that flows through on described the first gas piping 21.By controlling the flow on the first gas piping 21, described the first gas control unit 15 can be controlled the gaseous tension in described the first gas piping 21.Described mass flow controller is identical with structure and the principle of work of the mass flow controller of prior art, and those skilled in the art can carry out concrete selection and setting as required, are not described in detail at this.
In another embodiment of the present invention, described gas control unit 15 can also be pressure controller, and described pressure controller is used for the gaseous tension of control the first gas piping 21; Structure and the principle of work of described pressure controller are same as the prior art, and those skilled in the art can carry out concrete selection as required, are not described in detail at this.
As an embodiment, described the second gas control unit 16 is mass flow controller; As another embodiment of the present invention, described the second gas control unit 16 can also be pressure controller.
Gas pressure balancing control unit 17 of the present invention is differential pressure type film rule (Differential Capacitance Manometer), the principle of work of these differential pressure type film rule is: the Elastic Film that is arranged at two inner conductions of differential pressure type film rule (has medium layer between these two Elastic Films, thereby two Elastic Films and middle medium layer form capacitance structure) under the effect of the pressure difference between the first gas piping 21 and the second gas piping 22, produce recoverable deformation, described recoverable deformation is converted to the variation of the capacitance of capacitance structure, thereby obtains the pressure difference between the first gas piping 21 and the second gas piping 22.
As optional embodiment, but also be provided with metering pin valve 18 on described the second gas piping 22, but described metering pin valve 18 is connected between described the second gaseous tension control unit 16 and the pump 20, but described metering pin valve 18 is used for regulating the gas flow of the second gas piping 22.Usually, but described metering pin valve 18 can regulate the gas flow on the second gas piping 22 within the specific limits.
The principle of work of above-mentioned gas system is: the first purge gas source 11 and the second purge gas source 12 constantly provide sweeping gas, the first process gas source 13 and the second process gas source 14 provide source gas, when the gas flow on the first gas piping 21 or gaseous tension change, the gas pressure difference of described gas pressure balancing control unit 17 described the first gas pipings 21 of test and the second gas piping 22, then produce control signal, described control signal is regulated described the second gaseous tension control unit 16, by the gaseous tension of the second gaseous tension control unit 16 adjustings the second gas piping 22, so that the pressure of the gaseous tension of the second gas piping 22 and the first gas piping 21 is consistent.In said process, but can also be by regulating the pressure of described the second gas piping 22 of described metering pin valve 18 adjustings.
But the contriver finds that also the effect of the adjusting pressure of the second gas pressure regulator 16 is limited, so that the pressure of the two-way gas of the gas system of above-described embodiment can't balance.Particularly, if the second gas pressure regulator 16 is mass flow controller, the signal that gaseous tension control unit 17 provides is pressure signal, behind the input quality flow director, mass flow controller calculates pressure signal accordingly and changes, and the flow of the second gas piping 22 is regulated, and above-mentioned adjusting need to be through the after a while accumulation of the gentle scale of construction, just can reach setting pressure, so the response speed of mass flow controller is slow.When the gas pressure change of the first gas piping 21 is frequent, adopt mass flow controller can't effectively regulate the gaseous tension of the second gas piping 22, so that both keep balance.If the second gas pressure regulator 16 is pressure controller, the second gas pressure regulator 16 since the pressure regulation range fix, in the larger situation of the line pressure of the second gas piping 22, the second gas pressure regulator 16 a large amount of gases just can reach the pressure of setting, and the flow of gas is excessive, to such an extent as to surpass the scope that the second gas pressure regulator 16 can be controlled, pressure controller can't be regulated.
In order to address the above problem, the present invention also proposes a kind of gas system.Please refer to the structural representation of the gas system of second embodiment of the invention shown in Figure 3.
The first gas piping 111, be provided with the first gas control unit 105, described the first gas control unit 105 is used for controlling gas flow or the gaseous tension on described the first gas piping 111, described the first gas piping 111 1 ends are connected with the first purge gas source 101, the other end is connected with processing chamber 109, described the first purge gas source 101 is used for providing sweeping gas, and described sweeping gas flows to processing chamber 109 from the first purge gas source 101 through described the first gas control unit 105;
The second gas piping 112, be provided with the second gas control unit, described the second gas control unit is used for controlling the gaseous tension on described the second gas piping 112, one end of described the second gas piping 112 is connected with the second purge gas source 102, the other end is connected with pump 110, and described the second purge gas source 102 is used for providing sweeping gas;
Gas pressure balancing control unit 107, be connected across between described the first gas piping 111 and the second gas piping 112, be used for gathering the signal of described the first gas control unit 105 and the second gas control unit 106, and according to described signal acquisition pressure controling signal, described pressure controling signal is as the input signal of the second gas control unit.
As an embodiment, described the second gaseous tension control unit comprises:
Described the second gas control unit comprises mass flow controller 106 and the pressure controller 108 that is in series, described mass flow controller 106 is positioned at the upstream of described pressure controller 108, described pressure controling signal is as the input signal of described pressure controller 108, described mass flow controller 106 is used for controlling the gas flow on described the second gas piping 112, based on the flow that described mass flow controller 106 is set, the gaseous tension of 108 pairs of the second gas pipings 112 of described pressure controller is regulated.
In optional embodiment of the present invention, described the second gas control unit can also comprise: the partial pressure unit (not shown), described partial pressure unit and described pressure controller are parallel on described the second gas piping, described partial pressure unit is used for when the pressure of described the second gas piping surpasses the range of regulation of described pressure controller, with the portion gas shunting of the second gas piping.
As one embodiment of the present of invention, described gas pressure balancing control unit 107 is differential pressure type film rule, and its principle of work please refer to the first embodiment, is not described in detail at this.
As optional embodiment of the present invention, described the second gas control unit can also comprise: the flow range setup unit, be used for based on described pressure controling signal, regulate the range of the mass flow controller on described the second gas piping, so that described range is consistent with the range of regulation of described pressure controller.
To sum up, the embodiment of the invention arranges the gas pressure balancing control unit in described gas system, regulate the gaseous tension of the second gas piping by described gas pressure balancing control unit, so that the gaseous tension of the gaseous tension of described the second gas piping and described the first gas piping keeps balance, thereby so that the first gas piping and the second gas piping are when switching, the gaseous tension of this two-way gas piping can not fluctuate substantially, thereby the concentration of source gas and the stablizing of quality that are conducive to the pressure in the gas source and enter reaction chamber, improve the stable and repeated of epitaxy technique, improved the quality of the epitaxial material layer that forms;
Further optimally, described the second gas control unit comprises mass flow controller and the pressure controller of series connection, the pressure controling signal of described gas pressure balancing control unit is controlled described pressure controller, described mass flow controller is positioned at the upstream of described pressure controller, and described pressure controling signal is as the input signal of described pressure controller.
Although oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (8)
1. a gas system is characterized in that, comprising:
The first gas piping is provided with the first gas control unit, and described the first gas control unit is used for controlling gas flow or the gaseous tension on described the first gas piping;
The second gas piping is provided with the second gas control unit, and described the second gas control unit is used for controlling the gaseous tension on described the second gas piping;
The gas pressure balancing control unit, be connected across between described the first gas piping and the second gas piping, be used for gathering the signal of described the first gas control unit and the second gas control unit, and according to described signal acquisition pressure controling signal, described pressure controling signal is as the input signal of the second gas control unit.
2. gas system as claimed in claim 1 is characterized in that, described the first gas control unit is mass flow controller or pressure controller.
3. gas system as claimed in claim 1, it is characterized in that, described the second gas control unit comprises mass flow controller and the pressure controller of series connection, described mass flow controller is positioned at the upstream of described pressure controller, and described pressure controling signal is as the input signal of described pressure controller.
4. gas system as claimed in claim 3, it is characterized in that, described the second gas control unit also comprises: partial pressure unit, described partial pressure unit and described pressure controller are parallel on described the second gas piping, described partial pressure unit is used for when the pressure of described the second gas piping surpasses the range of regulation of described pressure controller, with the portion gas shunting of the second gas piping.
5. gas system as claimed in claim 3, it is characterized in that, described the second gas control unit also comprises: the flow range setup unit, be used for based on described pressure controling signal, regulate the range of the mass flow controller on described the second gas piping, so that described range is consistent with the range of regulation of described pressure controller.
6. gas system as claimed in claim 1 is characterized in that, described the second gas control unit is mass flow controller.
7. gas system as claimed in claim 1 is characterized in that, described gas system is applied to chemical vapor depsotition equipment.
8. gas system as claimed in claim 1 is characterized in that, described gas pressure balancing control unit is differential pressure type film rule.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110409679 CN103074675A (en) | 2011-12-09 | 2011-12-09 | Gas system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110409679 CN103074675A (en) | 2011-12-09 | 2011-12-09 | Gas system |
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| CN103074675A true CN103074675A (en) | 2013-05-01 |
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| CN 201110409679 Pending CN103074675A (en) | 2011-12-09 | 2011-12-09 | Gas system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568256A (en) * | 2016-02-24 | 2016-05-11 | 北京七星华创电子股份有限公司 | Implementation method for preparing thin film through atomic layer deposition technology |
| CN107844133A (en) * | 2017-12-20 | 2018-03-27 | 北京创昱科技有限公司 | A kind of mass flow controller |
-
2011
- 2011-12-09 CN CN 201110409679 patent/CN103074675A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568256A (en) * | 2016-02-24 | 2016-05-11 | 北京七星华创电子股份有限公司 | Implementation method for preparing thin film through atomic layer deposition technology |
| CN107844133A (en) * | 2017-12-20 | 2018-03-27 | 北京创昱科技有限公司 | A kind of mass flow controller |
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Application publication date: 20130501 |