CN103069542A - Extended life deposition ring - Google Patents
Extended life deposition ring Download PDFInfo
- Publication number
- CN103069542A CN103069542A CN201180039171XA CN201180039171A CN103069542A CN 103069542 A CN103069542 A CN 103069542A CN 201180039171X A CN201180039171X A CN 201180039171XA CN 201180039171 A CN201180039171 A CN 201180039171A CN 103069542 A CN103069542 A CN 103069542A
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- China
- Prior art keywords
- wall
- main body
- inwall
- ring main
- diapire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000008021 deposition Effects 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007373 indentation Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 description 76
- 239000000758 substrate Substances 0.000 description 38
- 239000000463 material Substances 0.000 description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.
Description
The background of invention
Background technology
In depositing operation, from being deposited on the internal chamber surface of exposure such as target, gas access manifold or other material that is fit to the source, described internal chamber surface comprises chamber wall, substrate mounting assembly, electrostatic chuck and other hardware.Developed the process kit such as casing assembly, described process kit is looped around the electrostatic chuck in the semiconductor processing system, is not exposed under the intrasystem deposited material with the protection chuck.A casing assembly comprises detachable bezel ring, and deposition ring.
Deposition ring is statically placed on the circumferential flange of the outward flange extension of electrostatic chuck.The stayed surface diameter of chuck is slightly less than substrate diameter, and substrate is fixed on the stayed surface of described chuck.Therefore, be suspended from the interior section of deposition ring top surface by the fixing substrate of chuck.Bezel ring, is around the exterior section of deposition ring, and is statically placed on the exterior section of deposition ring.Bezel ring, has the lip that is suspended from the deposition ring exterior section but does not contact the deposition ring top surface, defines thus the gap, labyrinth between bezel ring, and the deposition ring.Separating bezel ring, stops deposited material to transmit between the interval and contact with electrostatic chuck with the gap, labyrinth of deposition ring.
Showed firm performance although have the casing assembly of above-mentioned configuration, the expectation improvement is as reducing the possibility that particulate produces in the chamber and/or prolonging the production duration of runs of cleaning between the ring changing.For example, the deposit that is formed on the ring may cause processing performance is had the bad electric bridge of adverse effect between these rings, so needs periodic replacement to clean ring.
Therefore, need to be through the process kit of improvement.
Technical field
Embodiments of the invention relate to the process kit for semiconductor processing chamber by and large, and more specifically, relate to deposition ring.
Summary of the invention
In one embodiment, a kind of process kit that comprises annular deposition ring main body is provided, described annular deposition ring main body comprises: the groove in the main body upper surface between inwall, outer wall, the inclination upper wall that defines at least a portion of main body upper surface, roof, diapire and recessed roof and the inwall, the minimum point of wherein said groove extend to distance between roof and the diapire at least half.
In another embodiment, a kind of process kit that comprises annular deposition ring main body is provided, described annular deposition ring main body comprises: the groove in the main body upper surface between inwall, outer wall, the inclination upper wall that defines at least a portion of main body upper surface, roof, diapire and recessed roof and the inwall, the summit of wherein said inclined upper surface from inwall extend to distance between inwall and the outer wall at least half.
In another embodiment, a kind of process kit that comprises annular deposition ring main body is provided, described annular deposition ring main body comprises: inwall, outer wall, define the inclination upper wall of at least a portion of main body upper surface, roof, diapire, groove in the main body upper surface between recessed roof and the inwall, and be radially positioned in the outer wall and be parallel to the pad of diapire, and described process kit comprises the bezel ring, with lug, described lug encircles the pad of main body with cooperation through the location, wherein said bezel ring, comprises lip, described lip through the location with when the lug of bezel ring, cooperates with the pad of ring main body and the roof formation gap, labyrinth of described ring main body.
Description of drawings
Therefore, can understand in detail the mode (that is, the above of the present invention more specific description of brief overview) of above-mentioned feature of the present invention, can obtain with reference to embodiment, some embodiment are illustrated in the accompanying drawing.Yet, should be noted that accompanying drawing only illustrates exemplary embodiments of the present invention, therefore should not be regarded as limitation of the scope of the invention, because the present invention can allow other equal effectively embodiment.
Fig. 1 is the fragmentary cross-sectional view of substrate support, is equipped with an embodiment of deposition ring on the described substrate support.
Fig. 2 is the birds-eye perspective of the deposition ring of Fig. 1.
Fig. 3 is the cross-sectional view along the deposition ring of the hatching 3-3 intercepting of Fig. 2.
Fig. 4 is the amplification profile of a part of the deposition ring of Fig. 3.
Fig. 5 is the amplification profile of another part of the deposition ring of Fig. 3.
Embodiment
Embodiments of the invention provide a kind of process kit for semiconductor processing chamber by and large.Described process kit advantageously comprises deposition ring, and described deposition ring has at least one feature of longer surface lifetime of promotion and/or process uniformity.Embodiments of the invention are found the effectiveness in some semiconductor processing chambers, and described semiconductor processing chamber comprises chemical vapor deposition chamber and physical vapor deposition chamber, and other chamber.
Fig. 1 is the fragmentary cross-sectional view of the substrate support 101 that is connected with process kit 100 interfaces.Process kit 100 can comprise one or more in deposition ring 102, bezel ring, 103 and the shell 104.Substrate support 101 is positioned in the treatment chamber (not shown).Shell 104 can be positioned the substrate support periphery and be coupled to treatment chamber.Bezel ring, 103 has circumferential body 105 usually.Main body 105 can be by the metal manufacturing such as stainless steel, aluminium oxide, titanium or other suitable material.Main body 105 generally includes lip 106, and lip 106 inwardly radially extends and be provided at the coboundary in the gap, labyrinth 132 of defining between deposition ring 102 and the bezel ring, 103.
The main body 105 of bezel ring, 103 also comprises interior ring 107 and outer shroud 108.Interior ring 107 and outer shroud 108 with distance spaced relationship autonomous agent 105 to downward-extension, described apart from spaced relationship defining slot 112.Groove 112 has ventricumbent openend, with the end engagement of permission with shell 104.
Top section at the inwall 109 of interior ring 107 defines tapered segment 110.Tapered segment 110 extends internally gradually from inwall 109, and terminates at lug 111 places that form on the lower surface of main body 105.Tapered segment 110 makes bezel ring, 103 and the deposition ring 102 can autoregistration when contacting with each other.
Lug 111 is generally level, and perpendicular to the central shaft of bezel ring, 103.Lug 111 provides the bearing surface of bezel ring, 103, and bezel ring, 103 is supported by deposition ring 102.Lug 111 is usually smooth and smooth, can repeat between lug 111 and the deposition ring 102 and consistent cooperation allowing.Because the tolerance in gap, labyrinth 132, this measure is crucial.In case of necessity, further adjust lug 111 to produce in the minimum particulate situation along deposition ring 102 slips.
The inward flange of lug 111 ends at wall 113.Wall 113 is vertical and extension between lug 111 and lip 106 substantially.Wall 113 is in the inner radial of interior ring 107, and at the radially outer of lip 106.Wall 113 forms the part on the border in gap, labyrinth 132.
Diapire 117 is through arranging with the flange 119 upper support deposition ring 102 at substrate support 101.Diapire 117 is usually perpendicular to the central shafts of deposition ring 102, with the flange 119 of substrate support 101 and be positioned substrate 131 keeping parallelisms on the substrate support 101.Diapire 117 is smooth and smooth, so that can repeat between diapire 117 and the flange 119 and consistent cooperation.Because the inward flange 125 of deposition ring 102 and the tolerance in the gap between the substrate 131, this measure is crucial.Very important, inward flange 125 is positioned at substrate 131 belows, has contactless minimum possibility entity gap between the two.If the gap is wide, then can have deposition at substrate support 101, and if the gap too small, or deposition ring 102 contact substrates 131 then possible back side plasma/electric arc can occur because of the potential difference of described assembly.Because deposition ring 102 with respect to thermal expansion and/or the contraction of substrate support 101, in case of necessity, is further adjusted diapire 117 to slide along flange 119.
The lowest surface 134 of main body 114 also comprises sunk part 120, and described sunk part 120 is formed between diapire 117 and the inwall 115.Sunk part 120 reduces to minimum with flange 119 and the contact zone between the deposition ring 102 of substrate support 101.When deposition ring 102 when the flange 119 of substrate support 101 moves, reducing the contact zone and can reduce friction between deposition ring 102 and the substrate support 101 produces particulate simultaneously and reduces to minimum.
The upper space 133 of main body 114 also is included in inward flange 125 and the groove 123 of the inner radial formation of roof 118.Groove 123 comprises outside and acclivitous external wall of upper portion 124 and inside and acclivitous upper inside wall 126.When the inside and acclivitous upper inside wall 126 of the upper space 133 of main body 114 was inclined upwardly towards inward flange 125, the thickness of main body 114 inwardly radially increased at the center of groove 123.Inward flange 125 is in the height higher than groove 123 with respect to diapire 117, and inward flange 125 is in the height lower than groove 123 with respect to roof 118.Groove 123 provides and substrate 131 and bezel ring, 103 both isolated collecting regions, so that at the material of deposition ring 102 deposition contact substrate 131 or stop the movement of ring 102,103 not.In addition, it is directed that the inside and acclivitous upper inside wall 126 of the main body 114 that defines between inward flange 125 and groove 123 provides, and described directed particle and the deposition materials of stoping marches in the gap of defining between inward flange 125 and substrate 131.
The outer wall 116 of main body 114 has the diameter through selecting, so that deposition ring 102 and bezel ring, 103 are keeping engagement in the temperature ranges widely.In Fig. 1 in the illustrated embodiment, outer wall 116 has greater than the internal diameter of the wall 113 of bezel ring, 103 and less than the diameter of the internal diameter of the tapered segment 110 of bezel ring, 103.
Between outer wall 116 and roof 118, form pad 127 to support bezel ring, 103.Pad 127 is generally level, and perpendicular to the central shaft of deposition ring 102.Pad 127 is through arranging to support the lug 111 of bezel ring, 103.Pad 127 is usually smooth and smooth, slides along pad 127 when ring 102,103 autoregistration to allow lug 111.Pad 127 can have the tapered segment 128 that is formed between pad 127 and the outer wall 116, and tapered segment 128 forms with the angle of the tapered segment 110 that is similar to bezel ring, 103, aims to assist ring 102,103.
Fig. 2 is the birds-eye perspective of deposition ring 102, and described figure illustrates at least one tab 201.Three tabs of described at least one tab 201(shown in Fig. 2) inward flange 125 of auto-deposition ring 102 and the inwall 115 between the sunk part 120 and upper inside wall 121 are extended.Tab 201 reduces the wall 122 of substrate support 101 and the Exposure between the deposition ring 102, keeps simultaneously deposition ring 102 substantially to be centered on the substrate support 101.Tab 201 is further through arranging to aim at one or more indentations (not icon) of substrate 131.Because deposition materials may enter via the indentation of substrate 131, so tab 201 provides substrate support 101 for sedimental Additional Protection.
Fig. 3 is the cross-sectional view along the deposition ring 102 of the hatching 3-3 intercepting of Fig. 2.Fig. 4 and Fig. 5 are the zoomed-in view of the each several part of deposition ring 102 shown in Fig. 3.Now referring to Fig. 4, can between roof 118 and diapire 117, define the thickness 403 of deposition ring 102.One half thickness of deposition ring is by center line 402 indications.Groove 123 can extend from roof 118, until the minimum point of groove 123 is in or is lower than a described half thickness.For example, as shown in Figure 4, the minimum point of groove 123 can surpass center line 402 and extend to the degree of depth 401.Allow groove 123 extend the life-span of going deep into to prolong in the main body 114 deposition ring 102, because before coming in contact between the deposition materials of substrate 131 and accumulation, can in groove 123, keep how external deposition materials here.
Now referring to Fig. 5, can between inwall 115 and outer wall 116, define the width 504 of deposition ring 102.One half width of deposition ring is by center line 503 indications among Fig. 5.The vertex distance 502 of outside and acclivitous external wall of upper portion 124 can extend to or extend beyond from inwall 115 half thickness of deposition ring 102.For example, outside and acclivitous external wall of upper portion 124 extends beyond center line 402 as shown in Figure 5.The gradient that the summit of outside and acclivitous external wall of upper portion 124 can be defined as outside and acclivitous external wall of upper portion 124 transits to locating of flat slope or descending from going up a slope.The upper space 133 that allows outside and acclivitous external wall of upper portion 124 comprise a high proportion of deposition ring 102 can prolong the life-span of deposition ring 102, because at substrate 131 or bezel ring, 103 and be deposited in come in contact between the deposition materials on the deposition ring 102 before, can hold how external deposition materials.
For the measurement to the orientation of deposition ring in the chamber 102 is provided, can provide one or more grooves 501 as shown in Figure 5.Groove 501 can with feature (not icon) engagement of at least one extension in substrate support 101 and/or shell 104.Because groove 501 helps ring 102 and tab 201 are maintained known orientation, therefore can complementary orientation provide substrate 131.
Therefore, provide a kind of deposition ring, described deposition ring is by reducing defective workmanship to help substrate deposition technique, and described defective workmanship is owing to short circuit and/or material bridge joint between ring and the substrate.
Although aforementioned content relates to preferred embodiment of the present invention, can in the situation that does not break away from base region of the present invention, design other and further embodiment of the present invention, and scope of the present invention is determined by subsequently claim.
Claims (15)
1. process kit comprises:
Annular deposition ring main body comprises:
Inwall;
Outer wall;
The inclination upper wall, described inclination upper wall defines at least a portion of the upper surface of described ring main body, and is inclined upwardly towards described outer wall;
Roof, described roof are positioned between described inclination upper wall and the described outer wall;
Diapire, described diapire and described roof are separated a distance; And
Groove, in the described upper surface of the described ring main body between the recessed described inclination upper wall of described groove and the described inwall, the minimum point of wherein said groove extend to described distance between described roof and the described diapire at least half.
2. process kit as claimed in claim 1 is characterized in that, described ring main body further comprises:
At least one indentation, described at least one indentation extends in the described main body, and extends towards the described diapire between described outer wall and the described roof;
Inward flange, described inward flange defines at least a portion of the described upper surface of described ring main body, and wherein said inward flange is positioned the radially outer of described inwall and perpendicular to described inwall; And
Pad, described pad is positioned the inner radial of described outer wall, and wherein said pad is parallel to described diapire.
3. process kit as claimed in claim 1 is characterized in that, described inwall is parallel with described outer wall, and wherein said roof and described diapire are perpendicular to described inwall and described outer wall.
4. process kit as claimed in claim 1 is characterized in that, described ring main body further comprises upper inside wall, and described upper inside wall is positioned the radially outer of described inwall and is parallel to described inwall.
5. process kit as claimed in claim 1 is characterized in that, described ring main body further comprises sunk part, and described sunk part is with respect to described diapire depression and be parallel to described diapire.
6. process kit as claimed in claim 1 is characterized in that, the described outer wall of described ring main body comprises tapered segment, and described tapered segment is in abutting connection with the described upper surface of described ring main body.
7. process kit as claimed in claim 1 is characterized in that, described ring main body further comprises groove, and described groove extends in the described diapire towards the described upper surface of described ring main body.
8. process kit comprises:
Annular deposition ring main body comprises:
Inwall;
Outer wall, described outer wall and described inwall are separated a distance;
The inclination upper wall, described inclination upper wall defines at least a portion of the upper surface of described ring main body, and be inclined upwardly towards described outer wall, the summit of wherein said inclination upper wall from described inwall extend to described distance between described inwall and the described outer wall at least half;
Roof, described roof are positioned between described inclination upper wall and the described outer wall;
Diapire; And
Groove is in the described upper surface of the described ring main body between the recessed described inclination upper wall of described groove and the described inwall.
9. process kit as claimed in claim 8 is characterized in that, described ring main body further comprises:
At least one indentation, described at least one indentation extends in the described main body, and extends towards the described diapire between described outer wall and the described roof;
Inward flange, described inward flange defines at least a portion of the described upper surface of described ring main body, and wherein said inward flange is positioned the radially outer of described inwall and perpendicular to described inwall; And
Pad, described pad is positioned the inner radial of described outer wall, and wherein said pad is parallel to described diapire.
10. process kit as claimed in claim 8 is characterized in that, described inwall is parallel with described outer wall, and wherein said roof and described diapire are perpendicular to described inwall and described outer wall.
11. process kit as claimed in claim 8 is characterized in that, described ring main body further comprises upper inside wall, and described upper inside wall is positioned the radially outer of described inwall and is parallel to described inwall.
12. process kit as claimed in claim 8 is characterized in that, described ring main body further comprises sunk part, and described sunk part is with respect to described diapire depression and be parallel to described diapire.
13. process kit as claimed in claim 8 is characterized in that, the described outer wall of described ring main body comprises tapered segment, and described tapered segment is in abutting connection with the described upper surface of described ring main body.
14. process kit as claimed in claim 8 is characterized in that, described ring main body further comprises groove, and described groove extends in the described diapire towards the described upper surface of described ring main body.
15. a process kit comprises:
Annular deposition ring main body comprises:
Inwall;
Outer wall, described outer wall and described inwall are separated the first distance;
The inclination upper wall, described inclination upper wall defines at least a portion of the upper surface of described ring main body, and be inclined upwardly towards described outer wall, the summit of wherein said inclination upper wall from described inwall extend to described the first distance between described inwall and the described outer wall at least half;
Roof, described roof are positioned between described inclination upper wall and the described outer wall;
Diapire, described diapire and described roof are separated second distance;
Groove, in the described upper surface of the described ring main body between the recessed described inclination upper wall of described groove and the described inwall, the minimum point of wherein said groove extend to described second distance between described roof and the described diapire at least half; And
Pad, described pad are positioned the inner radial of described outer wall and are parallel to described diapire; And
Bezel ring,, described bezel ring, has the lug to cooperate with the described pad of described ring main body through the location, wherein said bezel ring, comprises lip, and described lip is when the location cooperates with the described pad of described ring main body with the described lug at described bezel ring, and the described roof formation gap, labyrinth of described ring main body.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37570510P | 2010-08-20 | 2010-08-20 | |
| US61/375,705 | 2010-08-20 | ||
| PCT/US2011/045223 WO2012024061A2 (en) | 2010-08-20 | 2011-07-25 | Extended life deposition ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103069542A true CN103069542A (en) | 2013-04-24 |
Family
ID=45593040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180039171XA Pending CN103069542A (en) | 2010-08-20 | 2011-07-25 | Extended life deposition ring |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20120042825A1 (en) |
| JP (1) | JP2013537719A (en) |
| KR (1) | KR20130095276A (en) |
| CN (1) | CN103069542A (en) |
| SG (1) | SG187625A1 (en) |
| TW (1) | TW201216404A (en) |
| WO (1) | WO2012024061A2 (en) |
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| CN105655281A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Press ring, bearing apparatus and semiconductor processing device |
| CN106637124A (en) * | 2015-10-30 | 2017-05-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deposition ring for physical vapor deposition, and physical vapor deposition equipment |
| WO2018223659A1 (en) * | 2017-06-08 | 2018-12-13 | 北京北方华创微电子装备有限公司 | Deposition ring and chuck assembly |
| CN109402593A (en) * | 2018-11-02 | 2019-03-01 | 上海华力微电子有限公司 | A kind of method and deposition ring preventing deposition ring arc discharge |
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| CN115110042B (en) * | 2021-03-22 | 2024-03-01 | 台湾积体电路制造股份有限公司 | Physical vapor deposition reaction chamber and use method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201216404A (en) | 2012-04-16 |
| JP2013537719A (en) | 2013-10-03 |
| US20120042825A1 (en) | 2012-02-23 |
| KR20130095276A (en) | 2013-08-27 |
| WO2012024061A2 (en) | 2012-02-23 |
| WO2012024061A3 (en) | 2012-04-26 |
| SG187625A1 (en) | 2013-03-28 |
| US20150190835A1 (en) | 2015-07-09 |
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