CN103066935A - High-gain level switching circuit - Google Patents
High-gain level switching circuit Download PDFInfo
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- CN103066935A CN103066935A CN2012105679005A CN201210567900A CN103066935A CN 103066935 A CN103066935 A CN 103066935A CN 2012105679005 A CN2012105679005 A CN 2012105679005A CN 201210567900 A CN201210567900 A CN 201210567900A CN 103066935 A CN103066935 A CN 103066935A
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Abstract
A high-gain level switching circuit does not restrain the upper limit of the common-mode input range of an operational amplifier. When the operational amplifier operates at specified low supply voltage, the upper limit of the common-mode input range is very important. Important parameters such as gain and switching speed of the operational amplifier can be controlled in the condition of no affecting the common-mode input voltage range. The high-gain level switching circuit works in a non-differential mode so that the problem of stability of a difference circuit is solved. The high-gain level switching circuit has the advantage of improving the gain through current balancing.
Description
Technical field
The present invention relates to the raising of integrated amplifier performance.More particularly, the present invention relates to the raising of the level conversion level of an amplifier.
Background technology
In typical voltage amplifier, several NPN common emitters usually series connection obtain a high voltage gain.In discrete amplifier, the wholesale capacitor can be used for AC signal and the next level that does not affect direct current biasing in amplifier from a gain stage are combined.Yet in integrated amplifier, the wholesale capacitor normally can not utilize, because they need a large amount of chip areas.Therefore, in order to ensure enough LF-response being arranged, the normally direct-current coupling of the gain stage of integrated amplifier.Yet, high at the flat input direct-current level than it of output DC of a NPN common emitter gain stage.Therefore, in the cascade of a gain stage like this, this DC level increases progressively, and will exceed quite a lot of than first order input in its in the end output of one-level.Therefore the DC level of output has reduced the possible hunting range of amplifier output voltage like this near real supply voltage.
Increase with NPN and the PNP gain stage of complementation can be avoided DC level does not still make in this way, usually because gain and the frequency characteristic of monolithic PNP triode are poor.
The better mode that overcoming the DC level gain increases is to insert a level conversion level in every a pair of gain stage.The purpose of inserting a level conversion level like this is that DC level is reduced, and can provide unified gain buffering area to go to carry out to AC signal in the same time.In order to realize a buffering area institute role, simultaneously in order to have the relative low output impedance with one of a relatively high input impedance, a level conversion level is necessary.
Various circuit all is mentioned to the level conversion level.One is popularized level shifting circuit commonly used is the LM118 operational amplifier, and the PNP transconductance stage of a differential of employing drives the current mirror of a difference.The level conversion level is placed between differential input stage and the master gain level.In such design, the injurious effects of the PNP triode of level conversion level can be reduced by the use of feedforward compensation.
In amplifying circuit, feedforward compensation can be walked around slowly PNP level conversion level, is the level conversion level that differential input signal is transformed into single-ended signal and provides feasible in the high frequency stage.This is accomplished in LM118, such as, can eliminate half of the high-frequency signal that offers the level conversion level with a shunt capacitance, and it has expanded the dedicated bandwidth that has of operational amplifier.But this shunt capacitance may cause the problem of setup times.
The applicant has invented a kind of method of improvement: provide a single-ended signal to the level conversion level that does not have subsequently shunt capacitance (or second level circuit of other types) from differential input level.Here by a terminal that is coupled to the level conversion level that only has input stage of direct-coupling success, produce a reference signal to input and control the direct current part to another nothing of bringing in the direct-coupled signal of tracking of level conversion level.
The type that is used in the level conversion level of LM118 routine has deficiency, because it has reduced the upper limit of amplifier common-mode input voltage range, causes this value to be starkly lower than positive voltage.This is because there are some restrictions to need the input direct-current level of level conversion level than low at least one volt of positive voltage of amplifier.This unfavorable can be obvious especially when Amplifier Design or when low supply voltage is worked.
The LM118 type of level shifting circuit also has deficiency, and difference PNP triode and current mirror combine, and can introduce a phase delay, for given bandwidth, can weaken the stability of amplifier.In LM118, the high-frequency signal of half shifts level and can be bypassed electric capacity and eliminate entering level, and second half high-frequency signal can be fed back to the level conversion level at one time, and it feeds back round this level always.This high-frequency signal is accompanied by the feedforward high-frequency signal by the output meeting out-phase end that the level conversion level appears at the level conversion level.The needs that a main cause of the generation phase shift by the level conversion level is signal by the PNP triode of current mirror carry out calculus of differences.This phase shift causes signal to intervene feed-forward signal by the level conversion level, produces above-mentioned interference for stability.Yet level shifting circuit does not need high-frequency signal to go will have relatively few phase shift by current mirror, is single-ended feedforward compensation amplifier in order to be used in before the level conversion level, and we will provide a more suitably level shifting circuit.
In other known operational amplification circuits, LM101A and LM741, level conversion and differential-to-single-ended conversion have been implemented in input stage.This input stage comprises the NPN triode of a pair of difference, its emitter coupled PNP triode that shifts to a pair of level, thereby drive current mirror circuit.This PNP triode is connected to each PNP transistor base by driven with current sources usually.Electric current by each PNP triode conduction is difference, and the variation in each differential input can allow the electric current of PNP triode conduction change like this, also can cause the electric current of the every end conduction of current mirror to change.Disadvantageously, the calculus of differences of PNP triode and current mirror can produce significant phase delay at high-frequency signal, are similar to the level conversion level of LM118.
In view of the foregoing, the obviously circuit lower than positive voltage of an input voltage that does not need it is provided preferably for the level conversion level, thereby avoids this level conversion level will limit the possibility of the computing in the low pressure situation of the scope of input common mode voltage and amplifying circuit.
It preferably also provides one not need single-ended high-frequency signal to come level conversion level by current mirror, thereby avoids phase delay unnecessary on the level conversion level.
Summary of the invention
An object of the present invention is to provide an improved level conversion level circuit that can not limit the low-voltage operation of common-mode input voltage range and integrated circuit differential amplifier.
An improved level conversion level being provided, can controlling its mutual conductance under the condition of the common-mode input voltage range of not sacrificing amplifier, also is one object of the present invention.
Provide one therein the current balance type level conversion level that is used for the raising obtain gaining be further aim of the present invention.
An improved level conversion level is provided, current mirror can be provided therein, in order to obtain dc balance not introducing extra phase delay between two circuit branch of the level conversion level of a high frequency single-ended signal delivering to this grade, this is another object of the present invention.
Technical solution of the present invention
Above and other purpose of the present invention is finished by the level conversion level circuit that comprises a pair of NPN triode, a pair of resistance and a pair of PNP triode.This level conversion level is followed the tracks of the output voltage of differential input stage with the NPN emitter follower.The Voltage-output that comes self-electrode is converted to response current by the resistively couple of the emitter by a pair of PNP of being connected to triode to the output of emitter.This PNP triode is biased on the control voltage, and the variation of the base-emitter voltage of a PNP triode can not cause the variation of another PNP transistor base-emitter voltage so.From the PNP triode flow out without the difference electric current then the inflow current mirror circuit guarantee dc balance.
In a preferential embodiment, the gain that level shifts level is to cooperate the electric current that flows into the circuit both sides to increase by increasing triode.
Documents,
Patent of invention: level shift circuit, application number: 200810189114.X.
Description of drawings
Above-mentioned and of the present invention other purposes will be described in detail in conjunction with physical circuit figure below, and this can make the present invention more specific, wherein:
Fig. 1 is the simplified block diagram of conventional amplifier.
Fig. 2 comprises that level of the present invention shifts the simplified block diagram of operational amplifier of the specific performance of level.
Fig. 3 is the simplified block diagram of operational amplifier that comprises the specific performance of a level conversion level priority of the present invention.
Embodiment
Fig. 1 performance be the general operational amplifier 100 of a simplification, comprise a differential input stage 100a and a level conversion level 100b, triode 101 and 102, current source 103 and 104, and from the resistance 105,108 and 109 of differential input stage 100a.The difference input voltage is useful in the differential voltage that produces an amplification between the inverting input 107 of in-phase input end 106 and amplifier 100 and appears between triode 101,102 the collector electrode.This voltage is applied to the base stage of PNP triode 110 and 111 on level conversion level 100b, and converts difference current at the collector electrode of PNP triode 110 and 111.The quiescent current of giving PNP triode 110 and 111 is that the resistance by resistance 112 and 113 determines.This difference current inflow current mirror 100c comprises triode 115 and 116, and difference current is transformed into single ended voltage at triode 116 collector electrodes.Triode 117 and resistance 118 provide base current for triode 115 and 116.Single ended voltage is amplified by gain stage 119 and buffer stage 120 on the collector electrode of triode 116.The output of buffer stage 120 is that the output end vo that is coupled to amplifier 100 gets on.Arrowband and feed-back frequency compensation are provided by capacitor 121 and 122 respectively.The shunt capacitance that provides has been eliminated and has been provided to half the high-frequency signal that level shifts level.
The design of an operational amplifier that general level conversion level arranged is just as the above-mentioned described method that comprises some compromises, common-mode input range can obtain increasing under the consumption of amplifier gain uniquely therein, the switching rate of amplifier, or the mutual conductance of level conversion level.The method of these compromises is closely to link to each other with selection at triode 101 and 102 bias voltage, these below paragraph can describe more all sidedly.
The gain of differential input stage is proportional with the resistance of resistance 108 and 109, is proportional with these ohmically voltages therefore.Therefore the gain of amplifier is the factor that the collector electrode in triode 101 and 102 affects the selection of bias voltage.
The switching rate of amplifier and the electric current that is provided by current source 103 and 104 are proportional divided by the value of capacitor 121.Minimum capacity is to be limited by frequency compensated factor, so switching rate can obtain increasing by the electric current that is provided by current source 103 and 104 is provided, increases these electric currents and can allow the voltage on resistance 108 and 109 obtain increasing.Therefore, the optimization of transfer ratio can affect the selection of the bias voltage on the collector electrode of triode 101 and 102.
The impact of the 3rd parameter value and be because the mutual conductance of PNP level conversion by the collector voltage of triode 101 and 102 impact.PNP triode 110 and 111 is introduced a limit to the forwarding function end of amplifier, has therefore limited the bandwidth of amplifier.The existence of feed-forward capacitance makes the translation function end introduce a zero point.The frequency at zero point is determined by the mutual conductance of feed-forward capacitance value and PNP level conversion.Therefore, by the careful adjusting to these parameters, pole and zero can be cancelled each other, and when doing like this, the bandwidth of amplifier has also increased.The resistance total value of the mutual conductance of the level conversion of PNP and triode 110 and 111 emitters and the resistance of resistance 112 and 113 are inversely proportional to. Triode 110 and 111 emitter resistance resistance are inversely proportional to the emitter current of these diodes again conversely.The size of this emitter current is determined divided by the difference between the value of resistance 112 and 113 by the emitter voltage in the cathode voltage of triode 114 and triode 110 and 111.The mutual conductance that level shifts therefore can be by controlling resistance 112 and 113 resistance or introduce an additional voltage be configured in the emitter circuit of triode 110 and 111 ideal level (such as, with triode 114).These operating influences are in the selection of the bias voltage of the collector electrode of triode 101 and 102.
Eliminated in the specific enforcement of the present invention such as being limited among Fig. 2 of above-mentioned described common-mode input voltage range.In amplifier circuit 200, triode 110 and 111 base stage are no longer driven by the output of differential input stage 110a; On the contrary, they are connected on the bias voltage circuit 203, wherein, such as, may comprise as shown in the figure the transistor 204 by the triode connection, 205 and be connected to the voltage that the resistance 206 between positive source and triode 110 and 111 base stages forms and set string 203a, and one be connected to triode 110 and 111 and power cathode between current source 203b comprise transistor 207 and emitter resistance 208 that is driven by bias voltage VBIAS.
The output of differential input stage is connected to now on the base stage of NPN triode 201 and 202 and is used as emitter follower.Yet, one side because NPN triode 210 and 202 has whenever increased a phasing back and can not exist at the general level of Fig. 1 and shift on the level 100b what level shifted level 200b.The output of input stage is anti-phase connecting that they change to the level transfer.More particularly, are (level that namely is connected to the next stage 119 of amplifier from the difference output end of the non-oppisite phase end of input stage shift a side of level) that are connected on the base stage of triode 202 at the signal output part of the collector electrode of triode 101, the output of being shunted on the collector electrode of triode 102 is connected to the base stage (level that the difference output end of namely shunting from the quilt of the end of oppisite phase of input stage is connected to the next stage 119 of amplifier shifts the opposite side of level) of triode 201.
Triode 210 and 202 as the triode 110 and 111 among Fig. 1, provides a resistive buffering area at the input of level conversion level.The high input impedance of transistor base can hinder the level conversion level of loading input stage.Triode 201 and 202 collector electrode are connected on the positive voltage, and their emitter is connected on the triode 110 and 111 emitter by resistance 112 and 113 separately.
Be accompanied by and use level conversion level 200b of the present invention, this requirement adds the collector voltage of bearing in triode 101 and 102 by the level conversion level and has been eliminated.Triode 201 and 202 can also can be worked under very low collector to-boase voltage, so the collector voltage of triode 101 and 102 can be very near positive voltage.Voltage on the triode 114, resistance 112 and 113, and the binding site of the emitter-base stage of triode 110 and 111 no longer appear at triode 101 and 102 and positive voltage between.Therefore, the upper limit of this common-mode input range is widened, and namely input common mode voltage becomes forward bias and increased on the collector-base binding site of triode 101 and 102.Above-mentioned level conversion level as shown in Figure 1 reduces about two volts usually between the collector electrode of positive voltage and triode 101 and 102.In contrast, the level conversion level of the present invention voltage that allows to apply has been reduced about one volt or still less, this is desirable low voltage circuit.
Except increasing common-mode input voltage range, level conversion level of the present invention also allows the level conversion level is taked more flexibly controls.Triode 201 and 202 emitter voltage are than low 0.7 volt of the collector voltage of difference input stage, and the emitter voltage of triode 110 and 111 is higher 0.7 volt than the bias voltage that is provided by bias voltage circuit 203.Therefore, the voltage on the resistance 112 and 113 determines, and flows through their also better control of electric current, the resistance by changing resistance 112 and 113 or can realize by changing bias voltage.Like this, the mutual conductance of level conversion level can be controlled at the common-mode input voltage range that does not jeopardize amplifier.
The base stage that bias voltage circuit 203 keeps triode 110 and 111 so can cause being changed by the electric current of PNP triode conduction on level conversion level one side separately in the variation of input for triode 201 or 202 at a stable voltage.Electric current by the conduction of another one PNP triode can not change (supposing that its input here can not change), because the biasing of the base-emitter of this PNP triode does not change.Therefore the electric current by PNP triode 110 and 111 any one conduction is non-difference, because it is the output current by amplifier 119 conduction.Because the computing of this non-difference, single-ended high-frequency input signal is applied to can be by the current mirroring circuit of level conversion level on the base stage of triode 202, but it is directly coupled on the amplifier 119 by NPN triode 202, resistance 113 and PNP triode 111 on the contrary, is the same with feedforward by electric capacity 122.Therefore the phase shift of the high-frequency signal path by the level conversion level has been minimized.
The gain disappearance that circuit slight deficiency (the same with circuit among Fig. 1) is caused by the electric current that flows through amplifier 119 (imperfect) input in Fig. 2.This electric current mobile causes when current flowing two branch road imbalances at level conversion level 200b.Extra difference input voltage must be added to and compensate this imbalance on the amplifier.Therefore, the imbalance of this electric current has reduced the net gain of amplifier.
Fig. 3 has showed a block diagram that amplifier 300 is simplified, and utilizes a suitable specific measure 300b of level conversion level of the present invention, and 300b comprises the circuit of the raising gain of a gain disappearance that can be used for eliminating being caused by current imbalance.Amplifier 119 and 120 is showed by 308 by part 303, and the base current of triode 303 is representing the unsymmetrical current that flows to amplifier 119 in Fig. 2.
The balance of electric current is fundamentally finished by triode 302.Suppose that temporary transient collector current and emitter current are identical substantially, the Arbitrary Sets electrode current flows to triode 303 also can flow to triode 302.Therefore the base current of these two triodes also is the same basically.The base current of triode 303 provides by triode 202.Therefore, the electric current from the equal increment on transconductance stage both sides causes exhausting in the electric current of a balance.
The adding that the balance of electric current is accompanied by triode 301 has obtained better improvement.The base current of this triode is equal to the base current of triode 117, because the collector electrode-emitter circuit of these two triodes is connected.Therefore, the base current from triode 117 is to keep balance by the base current from triode 301.
The balance of electric current causes from the electric current at transconductance stage two ends all identical, no matter provide great output current by amplifier.Therefore, the difference input voltage additional for balanced balanced current there is no need, and therefore the gain of amplifier has increased.
The present invention is particularly suitable for being used on the amplifier of a feedforward compensation, inside this signalling channel is the single-ended preferential level conversion level that arrives when high frequency, such as passing through a shunt capacitance, perhaps, more suitably, follow the nothing control flip-flop of the Single-end output of input stage by replace path in parallel with relevant voltage generator circuit.Just as discussed previously, the present invention allows base stage that a single-ended high-frequency signal is added to triode 202 not shifting the load of current mirror of level just by level conversion by level.
Therefore, the specific measure of a level transfer level of improving has been described.Be described although specific measure of the present invention is combination and other design parameters, diagram is for purpose of the present invention is described, rather than limitation the present invention, just and the present invention only have by above claim and can be limited.
Claims (9)
1. level shifting circuit with high-gain, it is characterized in that: the level conversion level has the first and second input terminals and the 3rd terminal, and this stage comprises:
Voltage follower is connected to first and second input and brings in high input impedance is provided, the entire gain amplification of the low output impedance that power supply signal provides is applicable to respectively first and second input, and voltage follower provides the lead-out terminal of voltage signal to first and second voltage follower;
The lead-out terminal that the device of mutual conductance is connected to first and second voltage follower is used for conducting, between first and second output of the output of voltage follower and mutual conductance device, the voltage signal that the non-widely different ratio that the first and second size of current are different changes is respectively at the output of the first and second voltage followers; A current mirror has second output and the 3rd terminal that first electric current input is coupled to the mutual conductance device, makes output current be created in the 3rd terminal.
2. the level shifting circuit with high-gain according to claim 1, it is characterized in that: wherein, the mutual conductance device comprises the first and second mutual conductance circuit, and each circuit comprises:
A resistance has the first and second terminals, and first terminal is coupled to the output of voltage follower; The emitter-coupled of a PNP triode is to second terminal of resistor, and collector electrode is coupled to an output of mutual conductance device, be that electric current is to be produced by the output of voltage follower, this electric current in fact and voltage and the difference between the bias voltage that is applied in input proportional;
Wherein voltage follower comprises the first and second voltage follower circuits, and each circuit comprises a collector coupled to supply voltage, and base stage is coupled to an input and emitter-coupled to the NPN triode of voltage follower output;
Wherein mirror current source comprises: the collector coupled of first NPN triode is to first current input terminal of first mirror current source; The base stage of second NPN triode is coupled to the base stage of first NPN triode, and its emitter-coupled is to the emitter of first NPN triode, and its collector coupled is to second current input terminal of mirror current source; This device is coupled to the base stage of the first and second NPN triodes, thus the first and second NPN triodes of biasing mirror current source.
3. the level shifting circuit with high-gain according to claim 2, it is characterized in that: one of them common predetermined electrical bias voltage is loaded into the base stage of the PNP triode of the first and second conductive paths;
Wherein this offset assembly comprises a resistance that is coupled in parallel in first and second NPN transistor base-emitter base diode circuit, be coupled to the collector electrode of first NPN triode with its base stage, its collector electrode links to each other with power supply, and the 3rd NPN triode linking to each other with the base stage of first and second NPN triode of its emitter;
Wherein offset assembly comprises: a resistance that is coupled in parallel in first and second NPN transistor base-emitter base diode circuit, base stage links to each other with the collector electrode of first NPN triode, the 3rd the NPN triode that emitter links to each other with the base stage of first and second NPN triode; Emitter links to each other with the collector electrode of the 3rd triode, collector electrode links to each other with supply voltage and base stage is coupled to the 4th NPN triode of transconductance circuit, and wherein the 3rd and the 4th triode conduction current are with removing excessive electric current in the first order by the transconductor device conduction and the second level electric current.
4. the level shifting circuit with high-gain according to claim 1 is characterized in that:
A pair of NPN triode, the base stage of one of them links to each other to provide an output signal at its emitter with the 3rd terminal, the base stage of another one links to each other with transconductance circuit, wherein this to NPN triode conduction current with removing excessive electric current in the first order by transconductor device conduction and the second level electric current;
In a single chip integrated circuit, has differential input stage, one of them level shifting circuit have first, second and the 3rd port, a method is arranged converting a single-ended voltage in first DC level with second different voltage of port, this method may further comprise the steps:
The variation of following voltage of first terminal and first low-impedance voltage source provide the voltage of the interlude of the change in voltage that its variation can repeat first terminal; The variation of following voltage of second terminal and second low-impedance voltage source provide the voltage of the interlude of the change in voltage that its variation can repeat second terminal; First difference current that produces is proportional with first voltage of intermediate frequency substantially; Second difference current and second voltage of intermediate frequency of producing are proportional; And be equal to substantially difference between first electric current and second circuit at the electric current that the 3rd terminal produces.
5. the level shifting circuit with high-gain according to claim 4 is characterized in that: wherein produce separately first and second bias voltage that the indifference electric current is applied to be scheduled to of base stage by first and second NPN triode respectively;
Wherein difference current is that collector electrode at first PNP triode produces, second difference current produces at second PNP triode, the method comprises that further the emitter current of a balanced balanced current conduction of first PNP triode that deducts is equal to the electric current that is produced by the 3rd terminal, and wherein the gain of conversion can obtain increasing;
Wherein first difference current be that collector electrode at first PNP triode produces and its size owing to first image current source transistor reduces, second difference current is that the collector electrode at second PNP triode produces and its large fraction reduces owing to second image current source transistor and by the 3rd terminal conduction, the method further comprises a kind of electric current of controlling mirrored current transistor of removing in first and second difference current, and removes from another the balanced balanced current in two kinds.
6. the level shifting circuit with high-gain according to claim 5 is characterized in that: wherein predetermined bias voltage is loaded into the base stage of first PNP triode, is equal to substantially on the base stage that predetermined electrical bias voltage is loaded into second PNP triode;
Wherein balanced balanced current is second removed electric current of PNP transistor emitter.
7. the level shifting circuit with high-gain according to claim 1 is characterized in that: wherein control electric current and balanced balanced current and removed by the base current of NPN triode respectively.
8. the level shifting circuit with high-gain according to claim 1, it is characterized in that: this circuit is the gain for the level conversion level that improves an amplifier, this grade comprises that one has two branches and a differential level carry circuit that offers the circuit mirror current of each branch current, two branches of level shifter produce first and second each self-supporting first of electric current adapts to the independence that this grade made response with second input signal, the image current source circuit produces the Single-end output electric current of corresponding first and second electric currents, this output current offers the base stage at a triode of amplifier gain level, and the triode of this gain stage has the collector electrode-emitter circuit of a guide current response output current, and this improves circuit and comprises:
One has the triode that base stage is connected in the level conversion level, one is connected to and can basically conducts all by the collector electrode-emitter circuit of the electric current of the collector electrode of gain stage triode-emitter circuit conduction, and wherein the base stage of first balance triode electric current of drawing is equal to substantially by compensation increases the output current that level shifts level to the imbalance of the tranquil level of first and second electric currents that cause at the output current of drawing by the base stage of gain stage triode.
9. the level shifting circuit with high-gain according to claim 1 is characterized in that: the circuit that this gain improves further comprises:
Second balanced transistor that has the base stage that is connected to the level conversion level, with one be connected to and conduct substantially all by the collector electrode-emitter circuit of the electric current of collector electrodes-emitter circuits conduction of control triode, wherein the base stage of second the balance triode electric current of drawing is equal to the output current that increases the level conversion level by compensation to the imbalance of the tranquil level of first and second electric currents that cause at the output current of drawing by the base stage of gain stage triode substantially.
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| CN2012105679005A CN103066935A (en) | 2012-12-24 | 2012-12-24 | High-gain level switching circuit |
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| CN2012105679005A CN103066935A (en) | 2012-12-24 | 2012-12-24 | High-gain level switching circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106230432A (en) * | 2016-08-30 | 2016-12-14 | 成都紫微芯源科技有限公司 | A kind of high speed signal level switching circuit with low-power consumption ultra wide bandwidth |
| WO2019169567A1 (en) * | 2018-03-07 | 2019-09-12 | 厦门优迅高速芯片有限公司 | Low-voltage high-speed programmable equalization circuit |
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| US3562660A (en) * | 1967-12-26 | 1971-02-09 | Teledyne Inc | Operational amplifier |
| US4743862A (en) * | 1986-05-02 | 1988-05-10 | Anadigics, Inc. | JFET current mirror and voltage level shifting apparatus |
| US4767946A (en) * | 1987-01-12 | 1988-08-30 | Tektronix, Inc. | High-speed supply independent level shifter |
| US5148118A (en) * | 1991-03-22 | 1992-09-15 | Linear Technology Corporation | Level shift circuit with gain enhancement |
| CN203326961U (en) * | 2012-12-24 | 2013-12-04 | 苏州硅智源微电子有限公司 | Electrical level switching circuit with high gain |
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- 2012-12-24 CN CN2012105679005A patent/CN103066935A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3562660A (en) * | 1967-12-26 | 1971-02-09 | Teledyne Inc | Operational amplifier |
| US4743862A (en) * | 1986-05-02 | 1988-05-10 | Anadigics, Inc. | JFET current mirror and voltage level shifting apparatus |
| US4767946A (en) * | 1987-01-12 | 1988-08-30 | Tektronix, Inc. | High-speed supply independent level shifter |
| US5148118A (en) * | 1991-03-22 | 1992-09-15 | Linear Technology Corporation | Level shift circuit with gain enhancement |
| CN203326961U (en) * | 2012-12-24 | 2013-12-04 | 苏州硅智源微电子有限公司 | Electrical level switching circuit with high gain |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106230432A (en) * | 2016-08-30 | 2016-12-14 | 成都紫微芯源科技有限公司 | A kind of high speed signal level switching circuit with low-power consumption ultra wide bandwidth |
| CN106230432B (en) * | 2016-08-30 | 2023-04-28 | 成都紫微芯源科技有限公司 | High-speed signal level conversion circuit with low power consumption and ultra wide bandwidth |
| WO2019169567A1 (en) * | 2018-03-07 | 2019-09-12 | 厦门优迅高速芯片有限公司 | Low-voltage high-speed programmable equalization circuit |
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Application publication date: 20130424 |