CN103064640B - Be applied to the rapid read-write method of nandflash memory device - Google Patents
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Abstract
The invention provides a kind of rapid read-write method being applied to nandflash memory device, comprise an ECC control register and for the management debugging subregion to management byte regions debugging, this ECC control register comprises: management byte enable position, left sector data enable bit, data enable position, right wing district, error-checking enable bit, management byte length control bit; When reading Zhong Zuo sector, user data area, then left sector data enable bit in enable ECC control register, if left sector is positioned at first user data field, then manages byte length control bit in configuration ECC control register effective; Read one be made up of left and right two sectors user data area time, then enable ECC control register middle left and right sector data enable bit, if user data area is first user data field, then configures that to manage byte length control bit in ECC control register effective.Invention increases the read or write speed to nandflash memory device, in turn ensure that load information accuracy and hardware utilization.
Description
Technical field
The present invention relates to a kind of nandflash memory device reading/writing method, be specifically related to a kind of rapid read-write method being applied to nandflash memory device.
Background technology
The nandflash now commercially newly gone out is many all requires that the ECC verification in units of 1k byte supported by storage class controller, for the nandflash that a physical page size is 4k, usual user data is as shown in Figure 1 in the location mode of an actual physics page, nandflash internal memory is made up of some physical blocks, physical block comprises several Physical Page, Physical Page comprises management byte regions, several user data areas be made up of at least two sectors and several respectively with the district of error-checking one to one, described user data area (ECC), each error-checking district (ECC) is for verifying and the error code of its user data area of being responsible for of error correction, described management byte regions is used for setting up between logical page (LPAGE) and Physical Page or the corresponding relation set up between logical block and physical block.
Management reason byte: be generally memory controller producer according to several bytes of the management algorithm definition of oneself, needs to read separately this part data in actual applications and is used for setting up between logical page (LPAGE) and Physical Page or the corresponding relation set up between logical block and physical block and provide other customer management information.
1k user data: the data comprising user data two sectors.
LBA:logicalblockaddress, LBA (Logical Block Addressing) corresponds to the data of user sector (512 bytes), PC main side and storage class devices communicating with a sector (512 bytes) for unit reads and writes.
ECC:errorcorrectioncode, error-checking (code).Nandflash physical characteristics makes the mistake that certain probability can occur in its reading and writing data process, need a mechanism of corresponding error checking and correction (ECC), so memory controller generally all provides ECC for the detection of user data and the ECC correcting .Nandflash, common algorithm has BCH and Hamming code;
When user only need previous sector in 1k user data or after the data of a sector, if be all loaded in memory controller buffer memory by the data of whole 1k, the capacity increasing a sector-size certainly will be needed by memory controller buffer memory more; Originally only need to carry out error correction to a sector in addition, if all carry out error correction to whole 1k user data, the read rate to nandflash must be reduced.Therefore how to improve the read or write speed to nandflash memory device, become the direction that those skilled in the art make great efforts.
Summary of the invention
The object of the invention is to provide a kind of rapid read-write method being applied to nandflash memory device, and the method improves the read or write speed to nandflash memory device, and ensure that reading writing information accuracy and hardware utilization is high.
For achieving the above object, the technical solution used in the present invention is: a kind of rapid read-write method being applied to nandflash memory device, described nandflash storer is made up of some physical blocks, physical block comprises several Physical Page, Physical Page comprises management byte regions, several are by a left side, user data area and several of right two sectors composition have the error-checking district (ECC) of error correction respectively one to one with described user data area, each error-checking district (ECC) is for verifying error code in its user data area of being responsible for of also error correction, described management byte regions is used for the corresponding relation set up between logical page (LPAGE) and Physical Page or the corresponding relation set up between logical block and physical block,
Also comprise one group of error-checking control register for controlling respectively whether to carry out error correction to management byte regions, user data area and error-checking district, this error-checking control register comprises:
Management byte enable position, for controlling whether carry out error correction to described management byte regions;
Left sector data enable bit, for controlling whether carry out correction process to a sector in described user data area;
Data enable position, right wing district, for controlling whether carry out correction process to another sector in described user data area;
Error-checking enable bit, for controlling whether carry out correction process to described error-checking district (ECC);
Management byte length control bit, for the length of configuration management byte, thus controls to carry out error correction to region enable in Physical Page, and does not carry out error correction to the region closed in Physical Page;
Described user data area comprises a first user data field and at least one second user data area, described error-checking district (ECC) comprises a first error-checking district (ECC) and at least one the second error-checking district (ECC), and described first error-checking district (ECC) carries out verification Error Correction of Coding for being combined in its corresponding first user data field and management byte regions;
When carrying out read operation to nandflash: when logically reading Zhong Zuo sector, user data area, then left sector data enable bit in enable error-checking control register, if left sector is positioned at first user data field, then manage byte length control bit effectively (length is 8) in configuration error verification control register, send read command and customer management information is read in BCH module decoding debugging, but be not loaded in controller cache, left sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, again right wing district is read BCH module decoding debugging, but be not loaded in controller cache, otherwise, send read command and left sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, again right wing district is read BCH module decoding debugging, but be not loaded in the buffer memory of controller,
When logically reading right wing district in user data area, then data enable position, right wing district in enable error-checking control register, if right wing district is positioned at first user data field, then manage byte length control bit effectively (length is 8) in configuration error verification control register, send read command and customer management information and left sector data are read in BCH module decoding debugging, but be not loaded in controller cache, right sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, otherwise, send read command and left sector is read BCH module decoding debugging, but be not loaded in the buffer memory of controller, sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction,
When logically reading one by a left side, during the user data area that right two sectors form, then left in enable error-checking control register, data enable position, right wing district, if user data area is first user data field, then manage byte length control bit effectively (length is 8) in configuration error verification control register, send read command and customer management information is read in BCH module decoding debugging, but be not loaded in controller cache, user data area data are read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, otherwise, send read command and user data area data are read BCH module decoding debugging, and be loaded in controller cache and carry out error correction,
When carrying out write operation to nandflash: when writing data in first user data field, the data of customer management information and first user data field to be written are carried out coding through BCH module and generates BCH code, then the data of customer management information, first user data field to be written and BCH code are write customer management information district, first user data field and the first error-checking district (ECC) respectively;
When writing data in the second user data area, then manage byte length control bit invalid, again the data of the second user data area to be written are carried out coding through BCH module and generate BCH code, then the data of the second user data area to be written and BCH code are write respectively the second user data area and the second error-checking district (ECC).
Further improvement project in technique scheme is as follows:
1. in such scheme, described Physical Page comprises 4 user data areas, 4 error-checking districts (ECC).
2. in such scheme, described customer management information section length is 8 bytes, comprises the management byte of 4 bytes and the CRC check code of 4 bytes.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect:
The present invention is applied to the rapid read-write method of nandflash memory device, its hardware provides a mechanism at ECC control register and goes enable or close relevant region data the need of error correction, if so when we only need to read in previous sector data to memory controller buffer memory, we can only enable left sector data region, allow whole 1k data+BCH code need to carry out debugging through ECC passage, but only need to read to carry out error correction in left sector data to memory controller buffer memory, based on reason same above, we are when actual read data, may only need to read right sector data in memory controller buffer memory, and memory controller buffer memory just can only provide the capacity of a sector can use (data read can override useful data above more), therefore, we are when only needing to read in a rear sector data to memory controller buffer memory, ECC control register can be configured, only data area, enable right wing district, whole 1k data+BCH code is carried out debugging through ECC passage, but carry out error correction in read-only right sector data to memory controller buffer memory, turn improve the read or write speed to nandflash memory device.
Accompanying drawing explanation
Accompanying drawing 1 is prior art nandflash memory construction schematic diagram;
Accompanying drawing 2 is nandflash memory construction schematic diagram of the present invention;
Accompanying drawing 3 manages byte read operation process flow diagram for the present invention;
Accompanying drawing 4 is error-checking control register structural representation of the present invention;
Accompanying drawing 5 is user data read operation process flow diagram of the present invention;
Accompanying drawing 6 is user data write operation process flow diagram of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Embodiment: a kind of rapid read-write method being applied to nandflash memory device, described nandflash storer is made up of some physical blocks, physical block comprises several Physical Page, Physical Page comprises management byte regions, several are by a left side, user data area and several of right two sectors composition have the error-checking district (ECC) of error correction respectively one to one with described user data area, each error-checking district (ECC) is for verifying error code in its user data area of being responsible for of also error correction, described management byte regions is used for the corresponding relation set up between logical page (LPAGE) and Physical Page or the corresponding relation set up between logical block and physical block,
Also comprise one group of error-checking control register for controlling respectively whether to carry out error correction to management byte regions, user data area and error-checking district, this error-checking control register comprises:
Management byte enable position, for controlling whether carry out error correction to described management byte regions;
Left sector data enable bit, for controlling whether carry out correction process to a sector in described user data area;
Data enable position, right wing district, for controlling whether carry out correction process to another sector in described user data area;
Error-checking enable bit, for controlling whether carry out correction process to described error-checking district (ECC);
Management byte length control bit, for the length of configuration management byte, thus controls to carry out error correction to region enable in Physical Page, and does not carry out error correction to the region closed in Physical Page;
Described user data area comprises a first user data field and at least one second user data area, described error-checking district (ECC) comprises a first error-checking district (ECC) and at least one the second error-checking district (ECC), and described first error-checking district (ECC) carries out verification Error Correction of Coding for being combined in its corresponding first user data field and management byte regions;
When carrying out read operation to nandflash: when logically reading Zhong Zuo sector, user data area, then left sector data enable bit in enable error-checking control register, if left sector is positioned at first user data field, then manage byte length control bit effectively (length is 8) in configuration error verification control register, send read command and customer management information is read in BCH module decoding debugging, but be not loaded in controller cache, left sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, again right wing district is read BCH module decoding debugging, but be not loaded in controller cache, otherwise, send read command and left sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, again right wing district is read BCH module decoding debugging, but be not loaded in the buffer memory of controller,
When logically reading right wing district in user data area, then data enable position, right wing district in enable error-checking control register, if right wing district is positioned at first user data field, then manage byte length control bit effectively (length is 8) in configuration error verification control register, send read command and customer management information and left sector data are read in BCH module decoding debugging, but be not loaded in controller cache, right sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, otherwise, send read command and left sector is read BCH module decoding debugging, but be not loaded in the buffer memory of controller, sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction,
When logically reading one by a left side, during the user data area that right two sectors form, then left in enable error-checking control register, data enable position, right wing district, if user data area is first user data field, then manage byte length control bit effectively (length is 8) in configuration error verification control register, send read command and customer management information is read in BCH module decoding debugging, but be not loaded in controller cache, user data area data are read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, otherwise, send read command and user data area data are read BCH module decoding debugging, and be loaded in controller cache and carry out error correction,
When carrying out write operation to nandflash: when writing data in first user data field, the data of customer management information and first user data field to be written are carried out coding through BCH module and generates BCH code, then the data of customer management information, first user data field to be written and BCH code are write customer management information district, first user data field and the first error-checking district (ECC) respectively;
When writing data in the second user data area, then manage byte length control bit invalid, again the data of the second user data area to be written are carried out coding through BCH module and generate BCH code, then the data of the second user data area to be written and BCH code are write respectively the second user data area and the second error-checking district (ECC).
Above-mentioned Physical Page comprises 4 user data areas, 4 error-checking districts (ECC), and above-mentioned user management byte is 4 bytes, and CRC check code length is 4 bytes.
Foregoing is further described below.
A debugging error correction algorithm can be adopted separately to management byte:
From the situation of actual analysis and test, these bytes of most Physical Page of most nandflash all do not have mistake, only have only a few Physical Page wrong.We only adopt a simple debugging algorithm, are only determined with and do not have mistake, as wrong, then adopt by management byte and 1k data below integrally, utilize original ECC module to carry out error correction, as quite right, system just directly acquisition manage byte data.
User only needs the data reading a sector
Minimum for each depositing actual read-write unit data is divided into 4 regions by us, as shown in table 1:
Table 1
| Customer management information | Left sector (512 bytes) data | Right wing district (512 bytes) data | CRC Code |
In conjunction with relevant hardware, make each region can control separately to want to carry out error correction, the length at every turn managing byte is in addition configurable, thus can control only to carry out error correction to enable region, and does not carry out error correction to the region closed.
The present invention designs relevant hardware mechanisms, then realizes correlation function in conjunction with software algorithm.With the management information that a length is 8 bytes, the practical application adopting BCH error correction algorithm is example, carries out following detailed design explanation.
1.ECCcontrolregister as shown in Figure 4.
Ctrl_MIEn, Ctrl_LeftEn, Ctrl_RightEn and ECC_En: these control bits want error correction for controlling relevant range.Our data to deposit order be 8 byte (management information)+left sectors (512 bytes) data+right wing district (512 bytes)+BCHCode, according to the design needs of system, enable corresponding control bit (being set to " 1 ") represents that corresponding partial data needs error correction, closes corresponding control bit (being set to " 0 ") and represents that corresponding partial data does not need error correction.
MI [3:0]: the length selecting management byte, as shown in table 2:
Table 2
Process to the read-write of management byte:
Management information length is the user management byte of 4 bytes and the CRC check code of 4 bytes, altogether 8 bytes.The user management byte of 4 bytes is for setting up the corresponding relation of virtual logical page and actual physics page, and other user-defined management information etc.Whether the CRC check of 4 bytes is just wrong for the management byte detecting 4 bytes, and without error correction, therefore algorithm is simple, and speed is fast, and cost is low.As CRC judges wrong, then adopt by management byte and 1k data below integrally, utilize original ECC module to carry out error correction, as quite right, system just directly acquisition manage byte data.
Process to only reading left sector in 1K data:
To in the actual read-write operation of data, for requiring nandflash 1K data being carried out to error correction, because our all data are all integrally be written in nandflash with 1K+BCHCode, therefore, when we read data, also this 1K+BCHCode integrally must be read.But we are when actual read data, may only need to read previous sector data in memory controller buffer memory, and memory controller buffer memory just can only provide the capacity of a sector can use (data read can override useful data below more), therefore, we do a special process in conjunction with the relevant support module of ECC hardware;
Hardware provides a mechanism at ECC control register and goes enable or close relevant region data the need of error correction, if so when we only need to read in previous sector data to memory controller buffer memory, we can only enable left sector data region, allow whole 1k data+BCH code need to carry out debugging through ECC passage, but only need to read to carry out error correction in left sector data to memory controller buffer memory.
Process to only reading right wing district in 1K data:
Based on reason same above, we are when actual read data, may only need to read right sector data in memory controller buffer memory, and memory controller buffer memory just can only provide the capacity of a sector can use (data read can override useful data above more), therefore, we are when only needing to read in a rear sector data to memory controller buffer memory, ECC control register can be configured, only data area, enable right wing district, whole 1k data+BCH code is carried out debugging through ECC passage, but carry out error correction in read-only right sector data to memory controller buffer memory.
Above-described embodiment, only for technical conceive of the present invention and feature are described, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (3)
1. one kind is applied to the rapid read-write method of nandflash memory device, described nandflash memory device is made up of some physical blocks, physical block comprises several Physical Page, Physical Page comprises management byte regions, several are by a left side, user data area and several of right two sectors composition have the error-checking district of error correction respectively one to one with described user data area, each error-checking district is for verifying error code in its user data area of being responsible for of also error correction, described management byte regions is used for the corresponding relation set up between logical page (LPAGE) and Physical Page or the corresponding relation set up between logical block and physical block, it is characterized in that:
Also comprise one group of error-checking control register for controlling respectively whether to carry out error correction to management byte regions, user data area and error-checking district, this error-checking control register comprises:
Management byte enable position, for controlling whether carry out error correction to described management byte regions;
Left sector data enable bit, for controlling whether carry out correction process to a sector in described user data area;
Data enable position, right wing district, for controlling whether carry out correction process to another sector in described user data area;
Error-checking enable bit, for controlling whether carry out correction process to described error-checking district;
Management byte length control bit, for the length of configuration management byte, thus controls to carry out error correction to region enable in Physical Page, and does not carry out error correction to the region closed in Physical Page;
Described user data area comprises a first user data field and at least one second user data area, described error-checking district comprises a first error-checking district and at least one second error-checking district, and described first error-checking district is used for its corresponding first user data field and management byte regions to be combined to carry out verification Error Correction of Coding;
When carrying out read operation to nandflash: when logically reading Zhong Zuo sector, user data area, then left sector data enable bit in enable error-checking control register, if left sector is positioned at first user data field, then manage byte length control bit in configuration error verification control register effective, send read command and customer management information is read in BCH module decoding debugging, but be not loaded in controller cache, left sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, again right wing district is read BCH module decoding debugging, but be not loaded in controller cache, otherwise, send read command and left sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, again right wing district is read BCH module decoding debugging, but be not loaded in the buffer memory of controller,
When logically reading right wing district in user data area, then data enable position, right wing district in enable error-checking control register, if right wing district is positioned at first user data field, then manage byte length control bit in configuration error verification control register effective, send read command and customer management information and left sector data are read in BCH module decoding debugging, but be not loaded in controller cache, right sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, otherwise, send read command and left sector is read BCH module decoding debugging, but be not loaded in the buffer memory of controller, sector data is read BCH module decoding debugging, and be loaded in controller cache and carry out error correction,
When logically reading one by a left side, during the user data area that right two sectors form, then left in enable error-checking control register, data enable position, right wing district, if user data area is first user data field, then manage byte length control bit in configuration error verification control register effective, send read command and customer management information is read in BCH module decoding debugging, but be not loaded in controller cache, user data area data are read BCH module decoding debugging, and be loaded in controller cache and carry out error correction, otherwise, send read command and user data area data are read BCH module decoding debugging, and be loaded in controller cache and carry out error correction,
When carrying out write operation to nandflash: when writing data in first user data field, the data of customer management information and first user data field to be written are carried out coding through BCH module and generates BCH code, then the data of customer management information, first user data field to be written and BCH code are write customer management information district, first user data field and the first error-checking district respectively;
When writing data in the second user data area, then manage byte length control bit invalid, again the data of the second user data area to be written are carried out coding through BCH module and generate BCH code, then the data of the second user data area to be written and BCH code are write the second user data area and the second error-checking district respectively.
2. rapid read-write method according to claim 1, is characterized in that: described Physical Page comprises 4 user data areas, 4 error-checking districts.
3. rapid read-write method according to claim 1, is characterized in that: described customer management information section length is 8 bytes, comprises the management byte of 4 bytes and the CRC check code of 4 bytes.
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| CN201510039606.0A CN104599717B (en) | 2012-12-31 | 2012-12-31 | NAND Flash memory data storage method with error correction |
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| CN201510039315.1A CN104598169B (en) | 2012-12-31 | 2012-12-31 | High reliability data read method for flash memory |
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| CN101853212A (en) * | 2009-03-30 | 2010-10-06 | 芯邦科技（深圳）有限公司 | Data write-in method, data read method and data storage |
| CN102541677A (en) * | 2011-12-29 | 2012-07-04 | 苏州国芯科技有限公司 | Implementation method for increasing comparison table loading speed of nandflash storage device |
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| CN102541677A (en) * | 2011-12-29 | 2012-07-04 | 苏州国芯科技有限公司 | Implementation method for increasing comparison table loading speed of nandflash storage device |
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Address after: Room C2031, Suzhou Pioneer Park, 209 Zhuyuan Road, Suzhou High-tech Zone, Jiangsu Province Patentee after: Suzhou Guoxin Technology Co., Ltd. Address before: Room C2031, Suzhou Pioneer Park, 209 Zhuyuan Road, Suzhou High-tech Zone, Jiangsu Province Patentee before: C*Core Technology (Suzhou) Co., Ltd. |