CN103064264B - 一种调焦调平装置 - Google Patents
一种调焦调平装置 Download PDFInfo
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- CN103064264B CN103064264B CN201110319524.3A CN201110319524A CN103064264B CN 103064264 B CN103064264 B CN 103064264B CN 201110319524 A CN201110319524 A CN 201110319524A CN 103064264 B CN103064264 B CN 103064264B
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- grating
- illumination
- silicon chip
- imaging system
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- 238000003384 imaging method Methods 0.000 claims abstract description 28
- 238000001514 detection method Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005286 illumination Methods 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 241000276498 Pollachius virens Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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CN201110319524.3A CN103064264B (zh) | 2011-10-20 | 2011-10-20 | 一种调焦调平装置 |
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CN201110319524.3A CN103064264B (zh) | 2011-10-20 | 2011-10-20 | 一种调焦调平装置 |
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CN103064264A CN103064264A (zh) | 2013-04-24 |
CN103064264B true CN103064264B (zh) | 2015-05-20 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104460235B (zh) * | 2013-09-18 | 2017-01-04 | 上海微电子装备有限公司 | 调焦调平光斑水平位置的测量方法 |
CN111443577B (zh) * | 2020-04-08 | 2023-04-07 | 中国科学院微电子研究所 | 用于曝光设备的调整装置、方法及曝光设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6115185A (en) * | 1995-04-26 | 2000-09-05 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Process and device for forming and guiding the radiation field of one or several solid and/or semiconductor lasers |
CN1971426A (zh) * | 2006-12-01 | 2007-05-30 | 上海微电子装备有限公司 | 一种调焦调平传感装置的光学系统 |
CN101634545A (zh) * | 2009-08-21 | 2010-01-27 | 上海微电子装备有限公司 | 位置测量装置和方法 |
CN202257032U (zh) * | 2011-10-20 | 2012-05-30 | 中国科学院光电研究院 | 一种设有阶梯调焦标记的调焦调平装置 |
CN202494862U (zh) * | 2011-10-20 | 2012-10-17 | 中国科学院光电研究院 | 一种调焦调平装置 |
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2011
- 2011-10-20 CN CN201110319524.3A patent/CN103064264B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6115185A (en) * | 1995-04-26 | 2000-09-05 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Process and device for forming and guiding the radiation field of one or several solid and/or semiconductor lasers |
CN1971426A (zh) * | 2006-12-01 | 2007-05-30 | 上海微电子装备有限公司 | 一种调焦调平传感装置的光学系统 |
CN101634545A (zh) * | 2009-08-21 | 2010-01-27 | 上海微电子装备有限公司 | 位置测量装置和方法 |
CN202257032U (zh) * | 2011-10-20 | 2012-05-30 | 中国科学院光电研究院 | 一种设有阶梯调焦标记的调焦调平装置 |
CN202494862U (zh) * | 2011-10-20 | 2012-10-17 | 中国科学院光电研究院 | 一种调焦调平装置 |
Non-Patent Citations (2)
Title |
---|
Phase-shifting grating projection moire topography;Yi-Bae Choi et al;《Opt. Eng.》;19980331;第37卷(第3期);第521-525页 * |
投影型莫尔法的成像理论研究;伏燕军等;《中国激光》;20060430;第33卷(第4期);第1005-1010页 * |
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CN103064264A (zh) | 2013-04-24 |
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Effective date of registration: 20200805 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Aerospace Information Research Institute,Chinese Academy of Sciences Effective date of registration: 20200805 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Aerospace Information Research Institute,Chinese Academy of Sciences Address before: 9 Dengzhuang South Road, Haidian District, Beijing 100094 Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |
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Effective date of registration: 20210311 Address after: 100176 building 10, 156 Jinghai 4th Road, Daxing Economic and Technological Development Zone, Beijing Patentee after: BEIJING RSLASER OPTO-ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |