CN103051188B - Isolated direct current power module - Google Patents
Isolated direct current power module Download PDFInfo
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- CN103051188B CN103051188B CN201210525495.0A CN201210525495A CN103051188B CN 103051188 B CN103051188 B CN 103051188B CN 201210525495 A CN201210525495 A CN 201210525495A CN 103051188 B CN103051188 B CN 103051188B
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Abstract
The invention discloses an isolated direct current power module, and belongs to the field of power electronics. The power module comprises a transformer, a power loop, a control loop and a circuit board group, wherein the power loop is used for converting voltage; the control loop is connected with the power loop, and is used for controlling the conversion of the voltage; the circuit board group is used for bearing the transformer, the power loop and the control loop, and comprises a first circuit board and a second circuit board fixedly connected with the first circuit board; the control loop is arranged on a first board surface of the first circuit board; the power loop is arranged on a first board surface of the second circuit board; and the second circuit board is a ceramic copper-clad board. The power loop of the power module is attached to the ceramic copper-clad board, and by the ceramic copper-clad board, heat produced when the power loop works can be quickly conducted to prevent the influence of overheat of the power module on working efficiency.
Description
Technical field
The present invention relates to field of power electronics, particularly a kind of isolated DC power module.
Background technology
Power module directly can be mounted on PCB(Printed Circuit Board, printed circuit board (PCB)) on power supply unit.According to the difference of function, power module can be divided into DC/DC(Direct Current to DirectCurrent, direct current turns direct current) power module and AC/DC(Alternating Current to DirectCurrent, alternating current turns direct current) power module.
Wherein, DC/DC power module is used for converting a kind of direct voltage to another kind of direct voltage, can be divided into again isolated DC power module (being also called isolated DC power supply change-over device or isolation DC/DC power module) and non-isolated DC power supplier.Isolated DC power module is formed primarily of isolating transformer.The former limit of isolating transformer is by converting direct-current power into alternating-current power, and AC rectification is become direct current and exports to power consumption equipment by the secondary of isolating transformer.Further, the core devices on former and deputy limit is power MOSFET (Metallic OxideSemiconductor Field Effect Transistor, mos field effect transistor).Power MOSFET is power device, can produce a large amount of heats in the course of the work, dispels the heat insufficiently will cause power module cisco unity malfunction.Each composition device of existing isolated DC power module is mounted on PCB usually, dispels the heat mainly through PCB.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
The conductive coefficient of PCB composition material is little, and make the power device of isolated DC power module comparatively large to the thermal resistance of PCB, the heat that power device produces cannot efficiently be derived, and then affects the performance of isolated DC power module.
Summary of the invention
In order to solve the problem of prior art, embodiments provide a kind of isolated DC power module.Described technical scheme is as follows:
Embodiments provide a kind of isolated DC power module, described power module comprises transformer, the loop of power circuit for changing voltage, the control loop changed for control voltage be connected with described loop of power circuit and the circuit board group carrying described transformer, described loop of power circuit and described control loop, the second circuit board that described circuit board group comprises first circuit board and is fixedly connected with described first circuit board; Described control loop is located on the first plate face of described first circuit board; Described loop of power circuit is located on the first plate face of described second circuit board; Described second circuit board is ceramic copper-clad plate.
Wherein, the first plate face of described first circuit board and described second circuit board is respectively equipped with copper wire; Described loop of power circuit comprises some mos field effect transistor chips and controller chip; The bottom surface of each described mos field effect transistor chip is separately fixed in the copper wire in the first plate face of described second circuit board; Described power module also comprises the first copper sheet and the first lead-in wire; The electrode of each described mos field effect transistor chip end face is connected by the copper wire of described first copper sheet with the first plate face of described second circuit board; Described controller chip is connected with the copper wire of the one side of described mos field effect transistor chip and described second circuit board respectively by described first lead-in wire.
Wherein, the first plate face of described second circuit board and the first plate face of described first circuit board are positioned at same plane; Described power module also comprises some second lead-in wire and/or the second copper sheets; Described loop of power circuit goes between by described second and/or the second copper sheet is connected with described control loop; Described transformer is located on the first plate face of described second circuit board.
Alternatively, described first circuit board is printed circuit board (PCB).
Preferably, described printed circuit board (PCB) is embedded with metal derby, and described second circuit board is fixed on described metal derby.
Preferably, described first circuit board is metal substrate circuit board, and described metal substrate circuit board comprises metal substrate, covers adhesive linkage in described metal substrate and circuit layer successively; Described metal substrate circuit board offers groove, and described groove extends to described metal substrate from described circuit layer; Described second circuit board is fixed in described groove.
Alternatively, the second plate face of described second circuit board is provided with pin, and described second circuit board is fixed on the first plate face of described first circuit board by described pin, and described loop of power circuit is connected with described control loop circuit by described pin.
Alternatively, described transformer is located on the first plate face of described first circuit board, and described loop of power circuit comprises the circuit of described transformer primary side and the circuit of described transformer secondary; Described circuit board group comprises two described second circuit boards and a described first circuit board; The circuit of described transformer primary side is located on second circuit board described in one of them; The circuit of described transformer secondary is located on second circuit board described in another; Two described second circuit boards are positioned at the relative both sides of described transformer.
Preferably, described power module also comprises embedding shell; Described embedding shell is located on described second circuit board, and seals with described second circuit board and form embedding cavity, and described loop of power circuit is potted in described embedding cavity.
Preferably, described power module also comprises the radiator be located on the second plate face of described second circuit board.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is: because ceramic copper-clad plate has the circuit layer of copper one-tenth and the ceramic insulating barrier made, conductive coefficient is high; By the attachment of the loop of power circuit of power module on ceramic copper-clad plate, the heat produced when loop of power circuit can work by ceramic copper-clad plate conducts rapidly; Effectively reduce the junction temperature of power component in loop of power circuit, avoid power module overheated and affect operating efficiency, thus the power density of power module can be promoted further.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of isolated DC power module that the embodiment of the present invention one provides;
Fig. 2 is the side-looking structural representation of a kind of isolated DC power module that the embodiment of the present invention two provides;
Fig. 3 is the plan structure schematic diagram figure of a kind of isolated DC power module that the embodiment of the present invention two provides;
Fig. 4 is the plan structure schematic diagram being provided with the second circuit board of loop of power circuit that the embodiment of the present invention two provides;
Fig. 5 is the Rotating fields schematic diagram of the ceramic copper-clad plate that the embodiment of the present invention two provides;
Fig. 6 is the schematic diagram of the position relationship between the first circuit board that provides of the embodiment of the present invention two and second circuit board;
Fig. 7 is the Rotating fields schematic diagram of the first circuit board that the embodiment of the present invention three provides;
Fig. 8 is the schematic diagram of the position relationship between the first circuit board that provides of the embodiment of the present invention three and second circuit board;
Fig. 9 is the structural representation of a kind of isolated DC power module that the embodiment of the present invention four provides;
Figure 10 is the structural representation of the second circuit board that the embodiment of the present invention four provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
For the ease of understanding the technical scheme that the present invention describes, first isolated DC power module is introduced.Isolated DC power module is generally made up of transformer, the loop of power circuit being responsible for voltage transitions, responsible monitoring and the control loop of control loop of power circuit and the circuit board of carrying transformer, loop of power circuit and control loop.In embodiments of the present invention, carrying refers to, transformer, loop of power circuit and control loop are mechanically anchored on circuit board, and is connected by the copper wire achievement unit parallel circuit on it.Wherein, loop of power circuit comprises the full-bridge on the former limit of isolating transformer or the rectification circuit of half-bridge circuit and isolating transformer secondary.The main components of full-bridge or half-bridge circuit, rectification circuit is power mosfet chip and the semiconductor chip such as driver, controller.Control loop comprises the passive component such as switch, inductance of the power mosfet chip for control inputs/output.
Embodiment one
Embodiments provide a kind of isolated DC power module, see Fig. 1, this power module comprises transformer 11, the loop of power circuit 12 for changing voltage, the control loop 13 changed for control voltage be connected with loop of power circuit 12 and the circuit board group 14 carrying transformer 11, loop of power circuit 12 and control loop 13.
Wherein, this circuit board group 14 second circuit board 16 of comprising first circuit board 15 and being fixedly connected with first circuit board 15.Control loop 13 is located on the first plate face of first circuit board 15.Loop of power circuit 12 is located on the first plate face of second circuit board 16.Second circuit board 16 is DBC(Direct Bonded Copper, ceramic copper-clad) plate.
The beneficial effect that the above-mentioned power module that the present embodiment provides brings is: the loop of power circuit of power module is arranged on DBC plate by the embodiment of the present invention; Because DBC plate has the circuit layer of copper one-tenth and the ceramic insulating barrier made, conductive coefficient is high; So the heat produced when loop of power circuit can work by DBC plate conducts rapidly; Effectively reduce the junction temperature of power component in loop of power circuit, avoid power module overheated and affect operating efficiency, thus the power density of power module can be promoted further.
Embodiment two
Embodiments provide a kind of isolated DC power module, see Fig. 2 ~ Fig. 3, this power module comprises transformer 21, the loop of power circuit 22 for changing voltage, the control loop 23 changed for control voltage be connected with loop of power circuit 22 and the circuit board group 24 carrying transformer 21, loop of power circuit 22 and control loop 23.
Wherein, this circuit board group 24 second circuit board 26 of comprising first circuit board 25 and being fixedly connected with first circuit board 25.Control loop 23 is located on the first plate face of first circuit board 25.Loop of power circuit 22 is located on the first plate face of second circuit board 26.Second circuit board 26 is DBC plate.
Wherein, the first plate face of first circuit board 25 and second circuit board 26 is respectively equipped with copper wire (not shown).See Fig. 4, loop of power circuit 22 comprises some power mosfet chip 22a and controller chip 22b.(welding or sintering) is fixed respectively in the copper wire in the first plate face of second circuit board 26 in the bottom surface of each power mosfet chip 22a.This power module also comprises the first copper sheet 27 and the first lead-in wire 28, the electrode of each power mosfet chip 22a end face is connected with the copper wire in the first plate face of second circuit board 26 by the first copper sheet 27, and controller chip 22b passes through first and goes between and 28 to be connected with the copper wire in the first plate face of power mosfet chip 22a and second circuit board 26 respectively.Particularly, the composition components and parts of loop of power circuit 22, can through plastic packaging before being assembled on second circuit board 26.
Particularly, by copper sheet solder technology, the first copper sheet 27 is made to connect copper wire on the electrode of power mosfet chip 22a end face and second circuit board 26; By Wire Bonding Technology, make the circuit of the copper wire on the first lead-in wire 28 connection control device chip 22b and power mosfet chip 22a and controller chip 22b and second circuit board 26.Wire Bonding Technology and copper sheet solder technology are well known technology, are not described in detail in this.
Particularly, DBC plate can by existing DBC circuit board making fabrication techniques.Comprise insulating barrier 26a see Fig. 5, DBC plate and be arranged in the DBC circuit layer 26b on insulating barrier 26a two sides.Insulating barrier 26a is made up of pottery.DBC circuit layer 26b is made of copper, and with semiconductor chip or the welding of other metal bases or can sinter.DBC circuit layer 26b comprises some copper wire, and on the circuit layer 26b for being mounted on DBC plate, components and parts provide electrical connection.This is well known technology, is not described in detail in this.Just because of DBC plate has the such sandwich structure of copper-pottery-copper, copper and pottery all have the conductive coefficient more much higher than PCB, and its capacity of heat transmission is better than PCB far away.So when loop of power circuit 22 is mounted on DBC plate, radiating effect is good.
Further, as shown in Figure 6, in the present embodiment, first circuit board 25 is PCB, and this PCB is embedded with metal derby 211.Second circuit board 26 is fixed on this metal derby 211.In specific implementation, existing PCB metal derby embedded technology can be adopted, in advance metal derby 211 is embedded between two first circuit boards 25, and then second circuit board 26 is arranged on metal derby 211.
In the present embodiment, transformer 21 is located on the first plate face of second circuit board 26, and the first plate face of second circuit board 26 and the first plate face of first circuit board 25 are positioned at same plane.Power module also comprises some second lead-in wire 29 and/or the second copper sheets 210.Loop of power circuit 22 is connected with control loop 23 by the second lead-in wire 29 and/or the second copper sheet 210.Particularly, loop of power circuit 22 and control loop 23 reserving the corresponding welding end for welding, by Wire Bonding Technology, making the second lead-in wire 29 connect loop of power circuit 22 and control loop 23; Also by copper sheet solder technology, the second copper sheet 210 is made to connect loop of power circuit 22 and control loop 23.Wire Bonding Technology and copper sheet solder technology are well known technology, are not described in detail in this.
Further, refer again to Fig. 3 and Fig. 4, control loop 23 is distributed in the relative both sides of second circuit board 26, and is connected from second circuit board 26 both sides with loop of power circuit 22 circuit, and this layout can connect by optimized circuit; In addition, the relative dual-side in the first plate face of first circuit board 25 is provided with the pin for being connected with external circuit, is convenient to power module and is connected with the circuit of power consumption equipment.
Preferably, this power module also comprises embedding shell (not shown).Embedding shell is located on second circuit board 26, and seals with second circuit board 26 and form embedding cavity, and loop of power circuit 22 is potted in this embedding cavity, to protect the components and parts in loop of power circuit 22.
Preferably, this power module can also comprise the radiator (not shown) be located on the second plate face of second circuit board 26.
It should be noted that, the present embodiment is the quantity of first circuit board 25 in limiting circuit plate group 24 not.This circuit board group 24 can comprise a first circuit board 25, also can comprise the first circuit board 25 of two and above quantity.When circuit board group 24 comprises a second circuit board 26 and two first circuit boards 25, first circuit board 25 can be arranged the both sides of second circuit board 26 (adjacent both sides or relatively both sides, be preferably relative both sides).In addition, in the present embodiment, first circuit board 25 is PCB, but in other embodiments, first circuit board 25 also can be DBC plate, and at this moment, second circuit board 26 and first circuit board 25 can be same DBC plate.
The beneficial effect that the above-mentioned power module that the present embodiment provides brings is: the loop of power circuit of power module is arranged on DBC plate by the embodiment of the present invention; Because DBC plate has the circuit layer of copper one-tenth and the ceramic insulating barrier made, conductive coefficient is high; So the heat produced when loop of power circuit can work by DBC plate conducts rapidly; Effectively reduce the junction temperature of power component in loop of power circuit, avoid power module overheated and affect operating efficiency, thus the power density of power module can be promoted further.
Embodiment three
Embodiments provide a kind of isolated DC power module, the structure of this power module is substantially identical with the structure of the power module of embodiment two, and difference is, the first circuit board of the present embodiment is metal substrate circuit board.See Fig. 7, this metal substrate circuit board comprises metal substrate 35a, covers adhesive linkage 35b on metal substrate 35a and circuit layer 35c successively.Composition graphs 8, this metal substrate circuit board offers groove, and this groove extends to metal substrate 35a from circuit layer 35c.Second circuit board 36 is fixed in this groove.
The beneficial effect that the above-mentioned power module that the present embodiment provides brings is: the loop of power circuit of power module is arranged on DBC plate by the embodiment of the present invention; Because DBC plate has the circuit layer of copper one-tenth and the ceramic insulating barrier made, conductive coefficient is high; So the heat produced when loop of power circuit can work by DBC plate conducts rapidly; Effectively reduce the junction temperature of power component in loop of power circuit, avoid power module overheated and affect operating efficiency, thus the power density of power module can be promoted further.
Embodiment four
Embodiments provide a kind of isolated DC power module, see Fig. 9, this power module comprises transformer 41, the loop of power circuit 42 for changing voltage, the control loop 43 changed for control voltage be connected with loop of power circuit 42 and the circuit board group 44 carrying transformer 41, loop of power circuit 42 and control loop 43.
Wherein, this circuit board group 44 second circuit board 46 of comprising first circuit board 45 and being fixedly connected with first circuit board 45.Control loop 43 is located on the first plate face of first circuit board 45.Loop of power circuit 42 is located on the first plate face of second circuit board 46.Second circuit board 46 is DBC plate.
Wherein, see Figure 10, the second plate face of second circuit board 46 is provided with pin 412.Second circuit board 46 is fixed on the first plate face of first circuit board 45 by this pin 412.Loop of power circuit 42 is connected with control loop 43 circuit by this pin 412.In actual applications, second circuit board 46 and first circuit board 45 are reserved with the welding end of drawing this pin 412.
Preferably, in the present embodiment, transformer 41 is located on the first plate face of first circuit board 45, and circuit board group 44 comprises two second circuit boards 46 and a first circuit board 45.Because loop of power circuit 42 comprises the circuit on the former limit of transformer 41 and the circuit of transformer 41 secondary.Therefore, the circuit on the former limit of transformer 41 is located on one of them second circuit board 46; The circuit of transformer 41 secondary is located on another second circuit board 46.Two second circuit boards 46, be positioned at the relative both sides of transformer 41.
It should be noted that, the present embodiment does not limit the quantity of second circuit board 46 in circuit board group 44, and in other embodiments, this circuit board group 44 can comprise a second circuit board 46, also can comprise the second circuit board 46 of two and above quantity.
The beneficial effect that the above-mentioned power module that the present embodiment provides brings is: the loop of power circuit of power module is arranged on DBC plate by the embodiment of the present invention; Because DBC plate has the circuit layer of copper one-tenth and the ceramic insulating barrier made, conductive coefficient is high; So the heat produced when loop of power circuit can work by DBC plate conducts rapidly; Effectively reduce the junction temperature of power component in loop of power circuit, avoid power module overheated and affect operating efficiency, thus the power density of power module can be promoted further.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. an isolated DC power module, described power module comprises transformer, the loop of power circuit for changing voltage, the control loop changed for control voltage be connected with described loop of power circuit and the circuit board group carrying described transformer, described loop of power circuit and described control loop, it is characterized in that
The second circuit board that described circuit board group comprises first circuit board and is fixedly connected with described first circuit board; Described control loop is located on the first plate face of described first circuit board; Described loop of power circuit is located on the first plate face of described second circuit board; Described second circuit board is ceramic copper-clad plate;
Second plate face of described second circuit board is provided with pin, and described second circuit board is fixed on the first plate face of described first circuit board by described pin, and described loop of power circuit is connected with described control loop circuit by described pin;
Described transformer is located on the first plate face of described first circuit board, and described loop of power circuit comprises the circuit of described transformer primary side and the circuit of described transformer secondary; Described circuit board group comprises two described second circuit boards and a described first circuit board; The circuit of described transformer primary side is located on second circuit board described in one of them; The circuit of described transformer secondary is located on second circuit board described in another; Two described second circuit boards are positioned at the relative both sides of described transformer.
2. power module according to claim 1, is characterized in that, the first plate face of described first circuit board and described second circuit board is respectively equipped with copper wire; Described loop of power circuit comprises some mos field effect transistor chips and controller chip; The bottom surface of each described mos field effect transistor chip is separately fixed in the copper wire in the first plate face of described second circuit board; Described power module also comprises the first copper sheet and the first lead-in wire; The electrode of each described mos field effect transistor chip end face is connected by the copper wire of described first copper sheet with the first plate face of described second circuit board; Described controller chip is connected with the copper wire of the one side of described mos field effect transistor chip and described second circuit board respectively by described first lead-in wire.
3. power module according to claim 1, is characterized in that, the first plate face of described second circuit board and the first plate face of described first circuit board are positioned at same plane; Described power module also comprises some second lead-in wire and/or the second copper sheets; Described loop of power circuit goes between by described second and/or the second copper sheet is connected with described control loop; Described transformer is located on the first plate face of described second circuit board.
4. power module according to claim 1, is characterized in that, described first circuit board is printed circuit board (PCB).
5. power module according to claim 4, is characterized in that, described printed circuit board (PCB) is embedded with metal derby, and described second circuit board is fixed on described metal derby.
6. power module according to claim 1, is characterized in that, described first circuit board is metal substrate circuit board, and described metal substrate circuit board comprises metal substrate, covers adhesive linkage in described metal substrate and circuit layer successively; Described metal substrate circuit board offers groove, and described groove extends to described metal substrate from described circuit layer; Described second circuit board is fixed in described groove.
7. the power module according to any one of claim 1-6, is characterized in that, described power module also comprises embedding shell; Described embedding shell is located on described second circuit board, and seals with described second circuit board and form embedding cavity, and described loop of power circuit is potted in described embedding cavity.
8. the power module according to any one of claim 1-6, is characterized in that, described power module also comprises the radiator be located on the second plate face of described second circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525495.0A CN103051188B (en) | 2012-12-07 | 2012-12-07 | Isolated direct current power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525495.0A CN103051188B (en) | 2012-12-07 | 2012-12-07 | Isolated direct current power module |
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| Publication Number | Publication Date |
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| CN103051188A CN103051188A (en) | 2013-04-17 |
| CN103051188B true CN103051188B (en) | 2015-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210525495.0A Active CN103051188B (en) | 2012-12-07 | 2012-12-07 | Isolated direct current power module |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1086373A (en) * | 1992-10-20 | 1994-05-04 | 富士通株式会社 | Power module |
| US5747875A (en) * | 1993-09-08 | 1998-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor power module with high speed operation and miniaturization |
| CN1685595A (en) * | 2003-08-29 | 2005-10-19 | 松下电器产业株式会社 | Power converting module device and power unit using it |
-
2012
- 2012-12-07 CN CN201210525495.0A patent/CN103051188B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1086373A (en) * | 1992-10-20 | 1994-05-04 | 富士通株式会社 | Power module |
| US5747875A (en) * | 1993-09-08 | 1998-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor power module with high speed operation and miniaturization |
| CN1685595A (en) * | 2003-08-29 | 2005-10-19 | 松下电器产业株式会社 | Power converting module device and power unit using it |
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| CN103051188A (en) | 2013-04-17 |
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Address after: 523808, 2, Xincheng Road, Songshan science and Technology Industrial Park, Guangdong, Dongguan Patentee after: Huawei Technologies Co.,Ltd. Address before: 523808, 2, Xincheng Road, Songshan science and Technology Industrial Park, Guangdong, Dongguan Patentee before: Huawei Technologies Co.,Ltd. |