CN103048350A - Measuring mechanism for seebeck coefficient of nano-scale material and fabrication method of measuring mechanism - Google Patents
Measuring mechanism for seebeck coefficient of nano-scale material and fabrication method of measuring mechanism Download PDFInfo
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- CN103048350A CN103048350A CN2013100021291A CN201310002129A CN103048350A CN 103048350 A CN103048350 A CN 103048350A CN 2013100021291 A CN2013100021291 A CN 2013100021291A CN 201310002129 A CN201310002129 A CN 201310002129A CN 103048350 A CN103048350 A CN 103048350A
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Abstract
The invention provides a measuring mechanism for a seebeck coefficient of a nano-scale material. Release barrier strips are arranged on a substrate; a heat insulated cavity is sealed in the release barrier strips; a pair of thermocouples is arranged right above the heat insulated cavity; material characteristics of the first thermocouple strip and the second thermocouple strip are different; a first heating resistor strip is arranged on one side above the heat insulated cavity; a second heating resistor strip is arranged on the other side above the heat insulated cavity; the resistance of the first heating resistor strip is smaller than that of the second heating resistor strip; the two ends of the first heating resistor strip are connected with a second metal electrode and a third metal electrode respectively; the two ends of the second heating resistor strip are connected with a fourth metal electrode and a fifth metal electrode respectively; first metal electrodes are positioned above the first heating resistor strip, and connected with one end of the first thermocouple strip and one end of the second thermocouple strip; and the other end of the first thermocouple strip and the other end of the second thermocouple strip are connected with a sixth metal electrode and a seventh metal electrode. The measuring mechanism is used for measuring the seebeck coefficient of the nano-scale material.
Description
Technical field
The present invention relates to a kind of mechanism of measuring the micro/nano-scale material property and preparation method thereof, measuring mechanism of especially a kind of micro/nano-scale material Seebeck coefficient and preparation method thereof.
Background technology
MEMS infrared eye based on thermoelectric effect (Seebeck effect)----MEMS thermopile IR detector is a kind of typical device in sensor measuring field, can be used for forming temperature sensor, gas sensor, human body sensing system, burglar alarm etc.Thermopile IR detector can be surveyed constant radiant quantity, need not to be biased voltage, need not chopper, more is applicable to mobile the application and the obvious overall merits such as field studies with comparing based on the infrared eye of other principle of work (such as thermoelectric type infrared eye and thermosensitive resistance type infrared eye etc.) to have.Thereby the MEMS thermopile IR detector has very important significance for realizing that more broad infrared acquisition is used, and it is civilian, military application prospect is wide, and commercial value and market potential are very huge.
Thermo-electric converting material is the sensitive element of thermopile detector, also is the most key member of this detector; Seebeck coefficient is the parameter that characterizes the thermo-electric converting material thermoelectricity capability, is directly determining the performance of thermopile detector, also is a most parameter of core of this detector therefore.From this angle, how the Seebeck coefficient of Measurement accuracy material has important practical significance.
Seebeck coefficient refers to the ratio of the material two ends produce under the uniform temperature gradient condition open-circuit voltage and the temperature difference at material two ends.Only theoretically, Seebeck coefficient is a parameter that is easy to measure.Yet, in the actual measuring process inevitably measuring error can appear, and sometimes error can large degree to the severe jamming measurement result accuracy.For the MEMS thermopile IR detector, the physical dimension of its thermoelectric sensing unit is generally micron dimension even reaches nanometer scale, and is in this case, just more difficult based on the measurement of the Seebeck coefficient of these micro nano structures.
Summary of the invention
The objective of the invention is to replenish the deficiencies in the prior art, measuring mechanism of a kind of micro/nano-scale material Seebeck coefficient and preparation method thereof is provided, its simple in structure being convenient to is realized, can realize the measurement of micro/nano-scale material Seebeck coefficient, be easy to simultaneously and the integrated preparation of MEMS thermopile IR detector, thereby its measurement result can be the MEMS thermopile IR detector direct numeric reference is provided, and condition will facilitate for the demarcation based on the device performance of Seebeck effect.The technical solution used in the present invention is:
A kind of measuring mechanism of micro/nano-scale material Seebeck coefficient comprises substrate, and described substrate is provided with the release barrier strip, and described release barrier strip inner sealing has hot isolated chambers; Be provided with a pair of thermopair directly over the described hot isolated chambers, i.e. the first thermocouple bar and the second thermocouple bar, the first thermocouple bar is different with the material behavior of the second thermocouple bar; Top one side of hot isolated chambers is provided with the first heating resistor bar, and the top opposite side is provided with the second heating resistor bar; The resistance value of the first heating resistor bar is less than the resistance value of the second heating resistor bar; The two ends of described the first heating resistor bar connect respectively the second metal electrode and the 3rd metal electrode; The two ends of described the second heating resistor bar connect respectively the 4th metal electrode and five metals belongs to electrode.
The first metal electrode is positioned on the first heating resistor bar, and leads to electric isolation and the calorifics conducting of structure realization and the first heating resistor bar by release guard film and electrical isolation thermal conductance; Described the first metal electrode connects an end of the first thermocouple bar and an end of the second thermocouple bar.
The other end of the first thermocouple bar be connected the other end of thermocouple bar and connect respectively the 6th metal electrode and the 7th metal electrode; Described the 6th metal electrode and the 7th metal electrode are positioned on the second heating resistor bar, and lead to electric isolation and the calorifics conducting of structure realization and the second heating resistor bar by release guard film and electrical isolation thermal conductance.
The polysilicon that described thermopair centering the first thermocouple strip adoption P type mixes, the polysilicon that the second thermocouple strip adoption N-type is mixed; The perhaps polysilicon that mixes of described thermopair centering the first thermocouple strip adoption N-type, the polysilicon that the second thermocouple strip adoption P type mixes.
The resistance value of the resistance value of described the first heating resistor bar and the second heating resistor bar obtains required resistance value by the doping content that changes the heating resistor bar and/or the dimensional parameters of adjusting the heating resistor bar.
A kind of cascade measuring mechanism of micro/nano-scale material Seebeck coefficient comprises substrate, and described substrate is provided with the release barrier strip, and described release barrier strip inner sealing has hot isolated chambers; Top one side of hot isolated chambers is provided with the first heating resistor bar, and the top opposite side is provided with the second heating resistor bar; The resistance value of the first heating resistor bar is less than the resistance value of the second heating resistor bar; The two ends of described the first heating resistor bar connect respectively the second metal electrode and the 3rd metal electrode; The two ends of described the second heating resistor bar connect respectively the 4th metal electrode and five metals belongs to electrode.
Walking abreast directly over the described hot isolated chambers, it is many to thermopair to be provided with, and every pair of thermopair comprises the first thermocouple bar and the second thermocouple bar, and the first thermocouple bar is different with the material behavior of the second thermocouple bar; Corresponding every pair of thermopair arranges first metal electrode, the 6th metal electrode and the 7th metal electrode.
Every pair of the first metal electrode corresponding to thermopair is positioned on the first heating resistor bar, and leads to electric isolation and the calorifics conducting of structure realization and the first heating resistor bar by release guard film and electrical isolation thermal conductance; One end of the first thermocouple bar of every pair of thermopair be connected an end of thermocouple bar and connect the first corresponding metal electrode.
Every pair of corresponding the 6th metal electrode and the 7th metal electrode of thermopair is positioned on the second heating resistor bar, and leads to electric isolation and the calorifics conducting of structure realization and the second heating resistor bar by release guard film and electrical isolation thermal conductance; The other end of the first thermocouple bar of every pair of thermopair be connected the other end of thermocouple bar and connect respectively the 6th metal electrode and the 7th metal electrode.
Many to forming the cascade connection between the thermopair, thermopair at the corresponding levels connects the upper level thermopair to the 7th metal electrode of correspondence to the 6th metal electrode of correspondence; Thermopair at the corresponding levels connects the next stage thermopair to the 6th metal electrode of correspondence to the 7th metal electrode of correspondence.
The polysilicon that described thermopair centering the first thermocouple strip adoption P type mixes, the polysilicon that the second thermocouple strip adoption N-type is mixed; The perhaps polysilicon that mixes of described thermopair centering the first thermocouple strip adoption N-type, the polysilicon that the second thermocouple strip adoption P type mixes.
The resistance value of the resistance value of described the first heating resistor bar and the second heating resistor bar obtains required resistance value by the doping content that changes the heating resistor bar and/or the dimensional parameters of adjusting the heating resistor bar.
A kind of preparation method of micro/nano-scale material Seebeck coefficient measuring mechanism may further comprise the steps,
(a) step provides substrate, and forms release barrier strip and dielectric support film at described substrate;
(b) step, at above-mentioned dielectric support film thermocouple bar and heating resistor bar are set, wherein the heating resistor bar comprises the first heating resistor bar and the second heating resistor bar, the thermocouple bar comprises the first thermocouple bar and the second thermocouple bar, wherein the first heating resistor bar is different with the second heating resistor bar doping content and/or dimensional parameters, so that the resistance value of the first heating resistor bar is less than the resistance value of the second heating resistor bar; The first thermocouple bar is different with the material behavior of the second thermocouple bar; The first thermocouple bar and the second thermocouple bar are crossed over and are discharged barrier strip;
(c) step, above above-mentioned heating resistor bar and thermocouple bar, the release guard film is set, described release guard film is simultaneously as the electrical insulation material layer between metal and thermocouple bar, metal and the heating resistor bar, and the zone of its covering comprises the upper surface of substrate All Ranges except metal and heating resistor bar link position, metal and thermocouple bar link position and metal electrode and heating resistor bar crossover position;
(d) step arranges the logical structure of electrical isolation thermal conductance at above-mentioned metal electrode and heating resistor bar crossover position place;
(e) step, splash-proofing sputtering metal layer in the above-mentioned substrate of having made the logical structure of electrical isolation thermal conductance is optionally sheltered and the above-mentioned metal level of etching, realizes the graphical of metal level, forms metal electrode and metal connecting line; Metal electrode and metal connecting line comprise the teat on each metal electrode and the metal electrode, wherein, metal electrode comprises that the first metal electrode, the second metal electrode, the 3rd metal electrode, the 4th metal electrode, five metals belong to electrode, the 6th metal electrode and the 7th metal electrode; Teat on each metal electrode is the metal connecting line, for be connected the connection of thermocouple bar with the heating resistor bar;
(f) step, optionally shelter and etching release guard film, to form dielectric support film etching window at the release guard film, utilize described dielectric support film etching window that the dielectric support film is carried out etching, until etch into layers of release material under the dielectric support film etching window, to form the corrosion release channel;
(g) step, the layers of release material under the utilization corrosion release channel corrosive medium support membrane is to obtain hot isolated chambers.
Further, described (a) step comprises following substep:
(a-1) substep provides substrate, forms the substrate protective layer at substrate, and described substrate protective layer is SiO
2Material layer; Growth release material layer and through hole masking layer on the substrate protective layer; The material of described layers of release material is polysilicon; The material of through hole masking layer is SiO
2
(a-2) substep adopts reactive ion etching SiO at the through hole masking layer
2Method form the layers of release material etching window, by the layers of release material etching window, adopt RIE technology anisotropic etching layers of release material, form through hole;
(a-3) substep is removed the through hole masking layer, and in the substrate that forms through hole, deposit somatomedin support membrane, the material of described dielectric support film are SiO subsequently
2Use SiO
2The complete filling vias of material, and jointly form the release barrier strip with dielectric support film and substrate protective layer.
The material of described substrate is monocrystalline silicon, polysilicon or SOI substrate; The material of described metal level is Al or titanium.
Advantage of the present invention: 1, simple in structure, only consisted of by thermopair, heating resistor bar, metal electrode and metal connecting line; 2, this mechanism can be used for the measurement of multiple thermocouple material Seebeck coefficient, and material is widely applicable; 3, this mechanism can be used for the measurement of the Seebeck coefficient of different scale, different-shape thermocouple structure, and structure is applied widely; 4, thermopair quantity is adjustable, mutually cascade, and then can improve the precision of measurement; 5, utilize this measuring mechanism, also can realize simultaneously the measurement of micro/nano-scale resistivity of material, and can be used for studying the temperature characterisitic of micro/nano-scale resistivity of material; 6, the preparation technology of this measuring mechanism is simple, is easy to realize, its technological process and conventional microelectronic technique be compatibility mutually, so can with the integrated preparation of thermoelectric conversion sensor spare; 7, this measuring mechanism overall dimension is little, can be used as parallel device and senser element and makes simultaneously, under the prerequisite of getting rid of the process variations factor, can improve it as the feasibility of measurement and calibrating device.
Description of drawings
Fig. 1 to Fig. 9 is embodiment of the invention processing step cut-open view, wherein:
Fig. 1 is the cut-open view of the embodiment of the invention after substrate forms substrate protective layer, layers of release material and through hole masking layer.
Fig. 2 is the cut-open view after the embodiment of the invention forms through hole.
Fig. 3 is the cut-open view after the embodiment of the invention forms release barrier strip and dielectric support film.
Fig. 4 is the cut-open view after the embodiment of the invention arranges thermocouple bar and heating resistor bar.
Fig. 5 is the cut-open view after the embodiment of the invention arranges the release guard film.
Fig. 6 is the cut-open view after the embodiment of the invention arranges the logical structure of electrical isolation thermal conductance.
Fig. 7 is the cut-open view after the embodiment of the invention forms metal electrode and metal connecting line.
Fig. 8 is the cut-open view after the embodiment of the invention forms the corrosion release channel.
Fig. 9 is the cut-open view after embodiment of the invention corrosion layers of release material forms hot isolated chambers.
Figure 10 is general structure top view of the present invention.
Figure 11 is that the present invention is many to the structural representation after the thermopair cascade.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
Such as Fig. 9, shown in Figure 10: a kind of measuring mechanism of micro/nano-scale material Seebeck coefficient, comprise substrate 101, described substrate 101 is provided with and discharges barrier strip 302, and described release barrier strip 302 inner sealings have hot isolated chambers 901; Discharge barrier strip 302 and can in the process of the hot isolated chambers 901 of corrosion layers of release material 103 formation, play the effect that stops corrosion; Be provided with a pair of thermopair directly over the described hot isolated chambers 901, namely the first thermocouple bar 8 is different with the material behavior of the second thermocouple bar 9 with the second thermocouple bar 9, the first thermocouple bars 8; Top one side of hot isolated chambers 901 is provided with the first heating resistor bar 10, and the top opposite side is provided with the second heating resistor bar 11; The resistance value of the first heating resistor bar 10 is less than the resistance value of the second heating resistor bar 11; The two ends of described the first heating resistor bar 10 connect respectively the second metal electrode 2 and the 3rd metal electrode 3; The two ends of described the second heating resistor bar 11 connect respectively the 4th metal electrode 4 and five metals belongs to electrode 5;
The first metal electrode 1 is positioned on the first heating resistor bar 10, and leads to electric isolation and the calorifics conducting of structure 601 realizations and the first heating resistor bar 10 by release guard film 501 and electrical isolation thermal conductance; Described the first metal electrode 1 connects an end of the first thermocouple bar 8 and an end of the second thermocouple bar 9;
The other end of the first thermocouple bar 8 be connected the other end of thermocouple bar 9 and connect respectively the 6th metal electrode 6 and the 7th metal electrode 7; Described the 6th metal electrode 6 and the 7th metal electrode 7 are positioned on the second heating resistor bar 11, and lead to electric isolation and the calorifics conducting of structure 601 realizations and the second heating resistor bar 11 by release guard film 501 and electrical isolation thermal conductance.
The polysilicon (adopting this scheme in the present embodiment) that the polysilicon that described thermopair centering the first thermocouple bar 8 adopts the P type to mix, the second thermocouple bar 9 adopt N-type to mix; Perhaps described thermopair centering the first thermocouple bar 8 adopts the polysilicon of N-type doping, the polysilicon that the second thermocouple bar 9 adopts the P types to mix.
The resistance value of the resistance value of described the first heating resistor bar 10 and the second heating resistor bar 11 obtains required resistance value by the doping content that changes heating resistor bar 402 and/or the dimensional parameters of adjusting heating resistor bar 402.
As shown in figure 11, a kind of cascade measuring mechanism of micro/nano-scale material Seebeck coefficient comprises substrate 101, and described substrate 101 is provided with and discharges barrier strip 302, and described release barrier strip 302 inner sealings have hot isolated chambers 901; Top one side of hot isolated chambers 901 is provided with the first heating resistor bar 10, and the top opposite side is provided with the second heating resistor bar 11; The resistance value of the first heating resistor bar 10 is less than the resistance value of the second heating resistor bar 11; The two ends of described the first heating resistor bar 10 connect respectively the second metal electrode 2 and the 3rd metal electrode 3; The two ends of described the second heating resistor bar 11 connect respectively the 4th metal electrode 4 and five metals belongs to electrode 5;
Walking abreast directly over the described hot isolated chambers 901, it is many to thermopair to be provided with, and every pair of thermopair comprises that the first thermocouple bar 8 is different with the material behavior of the second thermocouple bar 9 with the second thermocouple bar 9, the first thermocouple bars 8; Corresponding every pair of thermopair arranges first metal electrode 1, the 6th metal electrode 6 and the 7th metal electrode 7;
Every pair of the first metal electrode 1 corresponding to thermopair is positioned on the first heating resistor bar 10, and leads to electric isolation and the calorifics conducting of structure 601 realizations and the first heating resistor bar 10 by release guard film 501 and electrical isolation thermal conductance; One end of the first thermocouple bar 8 of every pair of thermopair be connected an end of thermocouple bar 9 and connect the first corresponding metal electrode 1;
Every pair of corresponding the 6th metal electrode 6 and the 7th metal electrode 7 of thermopair is positioned on the second heating resistor bar 11, and leads to electric isolation and the calorifics conducting of structure 601 realizations and the second heating resistor bar 11 by release guard film 501 and electrical isolation thermal conductance; The other end of the first thermocouple bar 8 of every pair of thermopair be connected the other end of thermocouple bar 9 and connect respectively the 6th metal electrode 6 and the 7th metal electrode 7;
Many to forming the cascade connection between the thermopair, thermopair at the corresponding levels connects the upper level thermopairs to the 7th metal electrode 7 of correspondence to the 6th metal electrode 6 of correspondence; Thermopair at the corresponding levels connects the next stage thermopair to the 6th metal electrode 6 of correspondence to the 7th metal electrode 7 of correspondence.
The polysilicon that described thermopair centering the first thermocouple bar 8 adopts the P type to mix, the polysilicon that the second thermocouple bar 9 adopts N-type to mix; Perhaps described thermopair centering the first thermocouple bar 8 adopts the polysilicon of N-type doping, the polysilicon that the second thermocouple bar 9 adopts the P types to mix.
The resistance value of the resistance value of described the first heating resistor bar 10 and the second heating resistor bar 11 obtains required resistance value by the doping content that changes heating resistor bar 402 and/or the dimensional parameters of adjusting heating resistor bar 402.
In the measuring process of the measuring mechanism that uses the micro/nano-scale material Seebeck coefficient, making alive U1 between the second metal electrode 2 and the 3rd metal electrode 3 measures on the first metal electrode 1 temperature T 1 near the thermocouple location place by infrared thermometer simultaneously; Belong to on-load voltage U2 between the electrode 5 at the 4th metal electrode 4 and five metals, measure respectively simultaneously the temperature T 2 at close thermocouple location place on the 6th metal electrode 6 and the 7th metal electrode 7 by infrared thermometer; The value of described voltage U 1 is greater than the value of voltage U 2.Because the heat that the first heating resistor bar 10(low resistance heating resistor bar in the same time) produces is than the second heating resistor bar 11(high resistance heating resistor bar) the heat height that produces, so temperature T 1 is higher than temperature T 2, and then cause that the thermopair two ends produce temperature difference: an end that links to each other with the first metal electrode 1 is temperature end---hot junction, and an end that links to each other with the 6th metal electrode 6, the 7th metal electrode 7 respectively is low-temperature end---cold junction; At this moment, measure the voltage Δ U between the 6th metal electrode 6, the 7th metal electrode 7, so, the Seebeck coefficient of micro/nano-scale material can be according to Δ U/(T1-T2) calculate.
When the cascade measuring mechanism that uses the micro/nano-scale material Seebeck coefficient is measured, can measure total magnitude of voltage that all thermopairs produce after to cascade, then divided by the logarithm of thermopair, obtain average voltage.Calculate subsequently the mean value of Seebeck coefficient according to average voltage/(T1-T2).Total magnitude of voltage that a plurality of thermopairs produce after to cascade is greater than the voltage of single thermopair to producing, therefore easier measurement.The way of calculating mean value also can make measurement result more accurate.
Such as Fig. 1-shown in Figure 9: the measuring mechanism of above-mentioned micro/nano-scale material Seebeck coefficient can adopt following processing step to realize.Among the following embodiment, if no special instructions, processing step is conventional method; Described reagent and material if no special instructions, all can obtain from commercial channels.Comprise particularly:
(a) step provides substrate 101, and forms release barrier strip 302 and dielectric support film 301 at described substrate 101.Specifically comprise following three sub-steps:
(a-1) substep provides substrate 101, forms substrate protective layer 102 at substrate 101, and described substrate protective layer 102 is SiO
2Material layer; Growth release material layer 103 and through hole masking layer 104 on substrate protective layer 102; The material of described layers of release material 103 is polysilicon; The material of through hole masking layer 104 is SiO
2
(a-2) substep adopts reactive ion etching (RIE) SiO at through hole masking layer 104
2Method form layers of release material etching window 201, by layers of release material etching window 201, adopt RIE technology anisotropic etching layers of release material 103, form through hole 202;
(a-3) substep is removed through hole masking layer 104, and in the substrate that forms through hole 202, deposit somatomedin support membrane 301, the material of described dielectric support film 301 are SiO subsequently
2Use SiO
2The complete filling vias 202 of material, and discharge barrier strips 302 with dielectric support film 301 and substrate protective layer 102 common formation.
Below in conjunction with accompanying drawing 1-3 three sub-steps of (a) step are elaborated.
As shown in Figure 1: substrate 101 is provided, and the material of substrate 101 comprises monocrystalline silicon, polysilicon or SOI substrate, passes through the method growth SiO of dry-oxygen oxidation on the surface of substrate 101
2Material layer, to form substrate protective layer 102, the thickness of substrate protective layer 102 is 5000, and temperature is 950 ℃ during dry-oxygen oxidation, and the content of oxygen is 60%; Utilize the LPCVD(low pressure chemical vapor deposition at substrate protective layer 102) technology growth layers of release material 103 and through hole masking layer 104, wherein the material of layers of release material 103 is polysilicon, thickness is 2 μ m; The material of through hole masking layer 104 is SiO
2, thickness is 2000.During LPCVD technology growth layers of release material 103, the work boiler tube is 620 ℃, and pressure is the 200mTorr(millitorr), SiH
4Flow be 130sccm(standard-state cubic centimeter per minute); Adopt TEOS(Tetraethyl Orthosilicate, ethyl orthosilicate during LPCVD technology growth through hole masking layer 104) source, the temperature in source is 50 ℃, and furnace tube temperature is 720 ℃, and pressure is 300mTorr, and oxygen flow is 200sccm.Described substrate 101 adopts conventional material, and the material of substrate 101 comprises silicon.
As shown in Figure 2, at the surperficial spin coating photoresist of through hole masking layer 104, and form the sealing opening by photoetching process at photoresist, utilize subsequently reactive ion etching (RIE) SiO
2Method the figure of sealing opening on the photoresist is transferred in the through hole masking layer 104, form the sealing opening figure be arranged in through hole masking layer 104, namely the layers of release material etching window 201; Utilize the oxygen plasma dry method to remove photoresist and remove the photoresist of substrate surface with the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method; Adopt RIE technology anisotropic etching layers of release material 103, sealing opening figure in the through hole masking layer 104 is transferred in the layers of release material 103, the sealing opening figure that forms in the layers of release material 103 is through hole 202, and the width of formed through hole 202 is 1 μ m.Wherein, the RF power of RIE through hole masking layer 104 is 300W, and chamber pressure is 200mTorr, and etching gas is CF
4, CHF
3, the He mixed gas, corresponding flow is 10/50/12sccm.The etching gas that adopts during RIE layers of release material 103 is Cl
2With the mixed gas of He, its flow is respectively 180 and 400sccm, and RF power is 350W, and chamber pressure is 400 mTorr.
As shown in Figure 3, utilize reactive ion etching (RIE) SiO
2Method remove through hole masking layer 104 fully; In the substrate that forms through hole 202, by LPCVD deposition techniques somatomedin support membrane 301, the material of described dielectric support film 301 is SiO
2, the thickness of dielectric support film 301 is 8000, uses SiO
2The complete filling vias 202 of material, and with dielectric support film 301 and the substrate protective layer 102 common SiO that forms
2 Discharge barrier strip 302.
(b) step, at above-mentioned dielectric support film 301 thermocouple bar 401 and heating resistor bar 402 are set, wherein heating resistor bar 402 comprises the first heating resistor bar 10 and the second heating resistor bar 11, thermocouple bar 401 comprises the first thermocouple bar 8 and the second thermocouple bar 9, wherein doping content and/or the dimensional parameters of the first heating resistor bar 10 and the second heating resistor bar 11 are different, so that the resistance value of the first heating resistor bar 10 is less than the resistance value of the second heating resistor bar 11; The first thermocouple bar 8 is different with the material behavior of the second thermocouple bar 9; The first thermocouple bar 8 and the second thermocouple bar 9 are crossed over and are discharged barrier strip 302.In the present embodiment, the polysilicon that the first thermocouple bar 8 adopts the P type to mix, the polysilicon that the second thermocouple bar 9 adopts N-type to mix.
As shown in Figure 4, at above-mentioned dielectric support film 301 thermocouple bar 401 and heating resistor bar 402 are set, wherein heating resistor bar 402 comprises the first heating resistor bar 10 and the second heating resistor bar 11, and wherein the resistance of the first heating resistor bar 10 is less than the second heating resistor bar 11; Thermocouple bar 401 comprises the first thermocouple bar 8 and the second thermocouple bar 9, adopts respectively the polysilicon that the P type mixes and N-type is mixed; Specific as follows described:
By LPCVD technology growth polysilicon structure layer, be used to form thermocouple bar 401 and heating resistor bar 402 in the substrate that is provided with dielectric support film 301 and discharges barrier strip 302, the material of described structural sheet is polysilicon, and thickness is 2000; At the surperficial spin coating photoresist of polysilicon, and by photoetching process position making photoresist opening figure corresponding to the first heating resistor bar 10 and the first thermocouple bar 8 on photoresist, and it is carried out the P type mix, doping content is 5e22cm
-3, implant energy is 30KeV; Utilize the oxygen plasma dry method to remove photoresist and remove the photoresist of substrate surface with the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method; Form the opening figure of photoresist corresponding to the position of the second heating resistor bar 11 and the second thermocouple bar 9 again at the surperficial spin coating photoresist of polysilicon, and by photoetching process on photoresist, and it is carried out N-type mix, doping content is 4e19cm
-3, implant energy is 80KeV, utilizes the oxygen plasma dry method to remove photoresist and removes the photoresist of substrate surface with the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method.The spin coating photoresist for the third time on the surface of polysilicon, and by photoetching process position formation photoetching offset plate figure corresponding to heating resistor bar 402 and thermocouple bar 401 on photoresist, take this photoetching offset plate figure as mask, adopt RIE technology anisotropic etching polysilicon structure layer, form heating resistor bar 402 and thermocouple bar 401.The length of described thermocouple bar 401 is 200 μ m, and width is 10 μ m; The length of described the first heating resistor bar 10 is 300 μ m, and width is 50 μ m, and the length of the second heating resistor bar 11 is 1000 μ m, and width is 3 μ m.
(c) step, above above-mentioned heating resistor bar 402 and thermocouple bar 401, release guard film 501 is set, described release guard film 501 is simultaneously as the electrical insulation material layer between metal and thermocouple bar 401, metal and the heating resistor bar 402, the zone of its covering comprise except metal and heating resistor bar link position 504(referring to the mark position in the accompanying drawing 10), upper surface of substrate All Ranges metal and thermocouple bar link position 502 and metal electrode and the heating resistor bar crossover position 503;
As shown in Figure 5, by LPCVD technology growth release guard film 501, the material of described release guard film 501 is SiO at the above-mentioned substrate surface that is provided with heating resistor bar 402 and thermocouple bar 401
2, thickness is 4000; At described SiO
2The surperficial spin coating photoresist of layer, and by photoetching process opening figure corresponding to metal and heating resistor bar link position 504, metal and thermocouple bar link position 502 and metal electrode and heating resistor bar crossover position 503 formation photoresists on photoresist, utilize RIE SiO
2Method forms the graphical of release guard film 501; Utilize at last the oxygen plasma dry method to remove photoresist and remove the photoresist of substrate surface with the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method.
(d) step arranges the logical structure 601 of electrical isolation thermal conductance at above-mentioned metal electrode and heating resistor bar crossover position 503 places, is used for calorifics conducting and electric isolation between realization heating resistor bar 402 and the thermocouple bar 401;
As shown in Figure 6, by the LPCVD technology growth and the logical structure 601 of electrical isolation thermal conductance is set, the material of the logical structure 601 of described electrical isolation thermal conductance is Si in the substrate that is provided with release guard film 501
3N
4, thickness is 2000; At described Si
3N
4The surperficial spin coating photoresist of material, and on photoresist, form photoetching offset plate figure corresponding to metal electrode and heating resistor bar crossover position 503 places by photoetching process, utilize the RIE technology to form Si
3N
4Material graphical namely forms the logical structure 601 of electrical isolation thermal conductance; Utilize at last the oxygen plasma dry method to remove photoresist and remove the photoresist of substrate surface with the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method.
(e) step, splash-proofing sputtering metal layer in the above-mentioned substrate of having made the logical structure 601 of electrical isolation thermal conductance is optionally sheltered and the above-mentioned metal level of etching, realizes the graphical of metal level, forms metal electrode and metal connecting line 701; Metal electrode and metal connecting line 701 comprise the teat (metal connecting line) on each metal electrode and the metal electrode, wherein, metal electrode comprises that the first metal electrode 1, the second metal electrode 2, the 3rd metal electrode 3, the 4th metal electrode 4, five metals belong to electrode 5, the 6th metal electrode 6 and the 7th metal electrode 7; Teat on each metal electrode is the metal connecting line, is used for being connected or 401 connections of thermocouple bar with the heating resistor bar.
As shown in Figure 7, lead to splash-proofing sputtering metal layer in the substrate of structure 601 in the described electrical isolation thermal conductance that is provided with, the material that described this example of metal level adopts is Al, and thickness is 8000; Make the Al metallic layer graphic by photoetching process, make it to fill above-mentioned metal and heating resistor bar link position 504, metal and thermocouple bar link position 502, and be covered on the logical structure 601 of above-mentioned electrical isolation thermal conductance; Adopt subsequently the photoresist of the method removal substrate surface of organic washing.Wherein, the method for the graphical employing Al corrosive liquid wet etching of Al metal realizes that phosphoric acid in the Al corrosive liquid (concentration is 60% ~ 80%): acetic acid (concentration is 0.1%): nitric acid (concentration is 0.5%): the ratio of water is 16:1:1:2.
(f) step, optionally shelter and etching release guard film 501, to form dielectric support film etching window 801 at release guard film 501, utilize 801 pairs of dielectric support films of described dielectric support film etching window 301 to carry out etching, until etch into layers of release material 103 under the dielectric support film etching window 801, to form corrosion release channel 802;
As shown in Figure 8, spin coating photoresist in the substrate that is provided with the Al metal electrode makes photoresist form the opening figure of photoresist in the position corresponding to corrosion release channel 802 by photoetching process; Subsequently, utilize RIE SiO
2Technology is transferred to the opening figure of photoresist in the release guard film 501, forms dielectric support film etching window 801; Continue RIE SiO
2, until break-through dielectric support film 301 reaches layers of release material 103, the final corrosion release channel 802 that forms.
(g) step, the layers of release material 103 under the utilization corrosion release channel 802 corrosive medium support membranes 301 to obtain hot isolated chambers 901, obtains device architecture simultaneously.
As shown in Figure 9, because the material of layers of release material 103 is polysilicon, therefore adopt XeF
2Layers of release material 103 in the gas dry etching technology isotropic etch device architecture erodes by the polysilicon of corrosion release channel 802 with layers of release material 103, and then forms hot isolated chambers 901.Discharging barrier strip 302 can play the effect that stops corrosion in the process of the hot isolated chambers 901 of corrosion layers of release material 103 formation, be enclosed in the hot isolated chambers 901 that discharges in the barrier strip 302 thereby form.
Claims (9)
1. the measuring mechanism of a micro/nano-scale material Seebeck coefficient, comprise substrate (101), it is characterized in that: described substrate (101) is provided with and discharges barrier strip (302), and described release barrier strip (302) inner sealing has hot isolated chambers (901); Be provided with a pair of thermopair directly over the described hot isolated chambers (901), i.e. the first thermocouple bar (8) and the second thermocouple bar (9), the first thermocouple bar (8) is different with the material behavior of the second thermocouple bar (9); Top one side of hot isolated chambers (901) is provided with the first heating resistor bar (10), and the top opposite side is provided with the second heating resistor bar (11); The resistance value of the first heating resistor bar (10) is less than the resistance value of the second heating resistor bar (11); The two ends of described the first heating resistor bar (10) connect respectively the second metal electrode (2) and the 3rd metal electrode (3); The two ends of described the second heating resistor bar (11) connect respectively the 4th metal electrode (4) and five metals belongs to electrode (5);
The first metal electrode (1) is positioned on the first heating resistor bar (10), and leads to electric isolation and the calorifics conducting of structure (601) realization and the first heating resistor bar (10) by release guard film (501) and electrical isolation thermal conductance; Described the first metal electrode (1) connects an end of the first thermocouple bar (8) and an end of the second thermocouple bar (9);
The other end of the first thermocouple bar (8) be connected the other end of thermocouple bar (9) and connect respectively the 6th metal electrode (6) and the 7th metal electrode (7); Described the 6th metal electrode (6) and the 7th metal electrode (7) are positioned on the second heating resistor bar (11), and lead to electric isolation and the calorifics conducting of structure (601) realization and the second heating resistor bar (11) by release guard film (501) and electrical isolation thermal conductance.
2. the measuring mechanism of micro/nano-scale material Seebeck coefficient as claimed in claim 1 is characterized in that: the polysilicon that described thermopair centering the first thermocouple bar (8) adopts the P type to mix, the polysilicon that the second thermocouple bar (9) adopts N-type to mix; Perhaps described thermopair centering the first thermocouple bar (8) adopts the polysilicon that N-type is mixed, the polysilicon that the second thermocouple bar (9) adopts the P type to mix.
3. the measuring mechanism of micro/nano-scale material Seebeck coefficient as claimed in claim 1 or 2 is characterized in that: the resistance value of the resistance value of described the first heating resistor bar (10) and the second heating resistor bar (11) obtains required resistance value by the doping content that changes heating resistor bar (402) and/or the dimensional parameters of adjusting heating resistor bar (402).
4. the cascade measuring mechanism of a micro/nano-scale material Seebeck coefficient, comprise substrate (101), it is characterized in that: described substrate (101) is provided with and discharges barrier strip (302), and described release barrier strip (302) inner sealing has hot isolated chambers (901); Top one side of hot isolated chambers (901) is provided with the first heating resistor bar (10), and the top opposite side is provided with the second heating resistor bar (11); The resistance value of the first heating resistor bar (10) is less than the resistance value of the second heating resistor bar (11); The two ends of described the first heating resistor bar (10) connect respectively the second metal electrode (2) and the 3rd metal electrode (3); The two ends of described the second heating resistor bar (11) connect respectively the 4th metal electrode (4) and five metals belongs to electrode (5);
Walking abreast directly over the described hot isolated chambers (901), it is many to thermopair to be provided with, and every pair of thermopair comprises the first thermocouple bar (8) and the second thermocouple bar (9), and the first thermocouple bar (8) is different with the material behavior of the second thermocouple bar (9); Corresponding every pair of thermopair arranges first metal electrode (1), the 6th metal electrode (6) and the 7th metal electrode (7);
Every pair of the first metal electrode (1) corresponding to thermopair is positioned on the first heating resistor bar (10), and leads to electric isolation and the calorifics conducting of structure (601) realization and the first heating resistor bar (10) by release guard film (501) and electrical isolation thermal conductance; One end of the first thermocouple bar (8) of every pair of thermopair be connected an end of thermocouple bar (9) and connect corresponding the first metal electrode (1);
Every pair of corresponding the 6th metal electrode (6) and the 7th metal electrode (7) of thermopair is positioned on the second heating resistor bar (11), and leads to electric isolation and the calorifics conducting of structure (601) realization and the second heating resistor bar (11) by release guard film (501) and electrical isolation thermal conductance; The other end of the first thermocouple bar (8) of every pair of thermopair be connected the other end of thermocouple bar (9) and connect respectively the 6th metal electrode (6) and the 7th metal electrode (7);
Many to forming the cascade connection between the thermopair, thermopair at the corresponding levels connects the upper level thermopair to the 7th metal electrode (7) of correspondence to the 6th metal electrode (6) of correspondence; Thermopair at the corresponding levels connects the next stage thermopair to the 6th metal electrode (6) of correspondence to the 7th metal electrode (7) of correspondence.
5. the cascade measuring mechanism of micro/nano-scale material Seebeck coefficient as claimed in claim 4 is characterized in that: the polysilicon that described thermopair centering the first thermocouple bar (8) adopts the P type to mix, the polysilicon that the second thermocouple bar (9) adopts N-type to mix; Perhaps described thermopair centering the first thermocouple bar (8) adopts the polysilicon that N-type is mixed, the polysilicon that the second thermocouple bar (9) adopts the P type to mix.
6. such as the cascade measuring mechanism of claim 4 or 5 described micro/nano-scale material Seebeck coefficients, it is characterized in that: the resistance value of the resistance value of described the first heating resistor bar (10) and the second heating resistor bar (11) obtains required resistance value by the doping content that changes heating resistor bar (402) and/or the dimensional parameters of adjusting heating resistor bar (402).
7. the preparation method of a micro/nano-scale material Seebeck coefficient measuring mechanism is characterized in that: may further comprise the steps,
(a) step provides substrate (101), and forms release barrier strip (302) and dielectric support film (301) at described substrate (101);
(b) step, at above-mentioned dielectric support film (301) thermocouple bar (401) and heating resistor bar (402) are set, wherein heating resistor bar (402) comprises the first heating resistor bar (10) and the second heating resistor bar (11), thermocouple bar (401) comprises the first thermocouple bar (8) and the second thermocouple bar (9), wherein the first heating resistor bar (10) is different with the second heating resistor bar (11) doping content and/or dimensional parameters, so that the resistance value of the first heating resistor bar (10) is less than the resistance value of the second heating resistor bar (11); The first thermocouple bar (8) is different with the material behavior of the second thermocouple bar (9); The first thermocouple bar (8) and the second thermocouple bar (9) are crossed over and are discharged barrier strip (302);
(c) step, at above-mentioned heating resistor bar (402) and thermocouple bar (401) top release guard film (501) is set, described release guard film (501) is simultaneously as the electrical insulation material layer between metal and thermocouple bar (401), metal and the heating resistor bar (402), and the zone of its covering comprises the upper surface of substrate All Ranges except metal and heating resistor bar link position (504), metal and thermocouple bar link position (502) and metal electrode and heating resistor bar crossover position (503);
(d) step locates to arrange the logical structure (601) of electrical isolation thermal conductance at above-mentioned metal electrode and heating resistor bar crossover position (503);
(e) step, splash-proofing sputtering metal layer in the above-mentioned substrate of having made the logical structure (601) of electrical isolation thermal conductance is optionally sheltered and the above-mentioned metal level of etching, realizes the graphical of metal level, forms metal electrode and metal connecting line (701); Metal electrode and metal connecting line (701) comprise the teat on each metal electrode and the metal electrode, wherein, metal electrode comprises that the first metal electrode (1), the second metal electrode (2), the 3rd metal electrode (3), the 4th metal electrode (4), five metals belong to electrode (5), the 6th metal electrode (6) and the 7th metal electrode (7); Teat on each metal electrode is the metal connecting line, is used for being connected 402 with the heating resistor bar) or thermocouple bar (401) connection;
(f) step, optionally shelter and etching release guard film (501), to form dielectric support film etching window (801) at release guard film (501), utilize described dielectric support film etching window (801) that dielectric support film (301) is carried out etching, until etch into layers of release material (103) under the dielectric support film etching window (801), to form corrosion release channel (802);
(g) step, the layers of release material (103) under utilization corrosion release channel (802) the corrosive medium support membrane (301) is to obtain hot isolated chambers (901).
8. the preparation method of micro/nano-scale material Seebeck coefficient measuring mechanism as claimed in claim 7, it is characterized in that: described (a) step comprises following substep:
(a-1) substep provides substrate (101), forms substrate protective layer (102) at substrate (101), and described substrate protective layer (102) is SiO
2Material layer; At the upper growth release material layer (103) of substrate protective layer (102) and through hole masking layer (104); The material of described layers of release material (103) is polysilicon; The material of through hole masking layer (104) is SiO
2
(a-2) substep adopts reactive ion etching SiO at through hole masking layer (104)
2Method form layers of release material etching window (201), by layers of release material etching window (201), adopt RIE technology anisotropic etching layers of release material (103), form through hole (202);
(a-3) substep is removed through hole masking layer (104), subsequently in the substrate that forms through hole (202), and deposit somatomedin support membrane (301), the material of described dielectric support film (301) is SiO
2Use SiO
2The complete filling vias of material (202), and discharge barrier strip (302) with common formation of dielectric support film (301) and substrate protective layer (102).
9. such as the preparation method of claim 7 or 8 described micro/nano-scale material Seebeck coefficient measuring mechanisms, it is characterized in that: the material of described substrate (101) is monocrystalline silicon, polysilicon or SOI substrate; The material of described metal level is Al or titanium.
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