CN103035625B - 单路静电释放保护器件的加工方法 - Google Patents
单路静电释放保护器件的加工方法 Download PDFInfo
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- CN103035625B CN103035625B CN201210585572.1A CN201210585572A CN103035625B CN 103035625 B CN103035625 B CN 103035625B CN 201210585572 A CN201210585572 A CN 201210585572A CN 103035625 B CN103035625 B CN 103035625B
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CN109256380A (zh) * | 2018-09-25 | 2019-01-22 | 南京萨特科技发展有限公司 | 一种pesd芯材的浆料制备方法 |
CN109524421A (zh) * | 2019-01-04 | 2019-03-26 | 京东方科技集团股份有限公司 | 转接基板及其制造方法、阵列基板及显示装置 |
CN115064326A (zh) * | 2022-07-12 | 2022-09-16 | 苏州晶讯科技股份有限公司 | 一种电极间隙可控的静电抑制器及其制作方法 |
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CN101965758A (zh) * | 2008-04-14 | 2011-02-02 | 肖克科技有限公司 | 使用具有垂直切换构造的电压可切换电介质材料嵌入层的衬底器件或封装 |
CN102184913A (zh) * | 2011-04-25 | 2011-09-14 | 苏州晶讯科技股份有限公司 | 一种防静电器件 |
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US20060152334A1 (en) * | 2005-01-10 | 2006-07-13 | Nathaniel Maercklein | Electrostatic discharge protection for embedded components |
TW200816232A (en) * | 2006-09-28 | 2008-04-01 | Inpaq Technology Co Ltd | Material of an over voltage protection device, over voltage protection device and manufacturing method thereof |
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CN101965758A (zh) * | 2008-04-14 | 2011-02-02 | 肖克科技有限公司 | 使用具有垂直切换构造的电压可切换电介质材料嵌入层的衬底器件或封装 |
CN102184913A (zh) * | 2011-04-25 | 2011-09-14 | 苏州晶讯科技股份有限公司 | 一种防静电器件 |
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Effective date of registration: 20190510 Address after: 518057 Building 706, Special Information Port B, No. 2 Kefeng Road, Central District, Yuehai Street High-tech Zone, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN SIPTORY TECHNOLOGIES Co.,Ltd. Address before: 518057 Room 601A, Building 4, Shenzhen Software Park, Central District of Nanshan High-tech Park, Shenzhen City, Guangdong Province Patentee before: SHENZHEN ZHONGKE SYSTEM INTEGRATION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191111 Address after: Room A107, research building a, high tech think tank center, Nanhai software technology park, Shishan town, Nanhai District, Foshan City, Guangdong Province Patentee after: Guangdong fozhixin microelectronics technology research Co.,Ltd. Address before: 518057 Building 706, Special Information Port B, No. 2 Kefeng Road, Central District, Yuehai Street High-tech Zone, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN SIPTORY TECHNOLOGIES Co.,Ltd. |
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Denomination of invention: Processing method of single channel ESD protection device Effective date of registration: 20201224 Granted publication date: 20150603 Pledgee: Guangdong Nanhai Rural Commercial Bank branch branch of Limited by Share Ltd. Pledgor: Guangdong fozhixin microelectronics technology research Co.,Ltd. Registration number: Y2020980009995 |
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Granted publication date: 20150603 Pledgee: Guangdong Nanhai Rural Commercial Bank branch branch of Limited by Share Ltd. Pledgor: Guangdong Xinhua Microelectronics Technology Co.,Ltd.|Guangdong fozhixin microelectronics technology research Co.,Ltd. Registration number: Y2020980009995 |