CN103035608A - Semiconductor structure and package structure thereof - Google Patents
Semiconductor structure and package structure thereof Download PDFInfo
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- CN103035608A CN103035608A CN2011103075487A CN201110307548A CN103035608A CN 103035608 A CN103035608 A CN 103035608A CN 2011103075487 A CN2011103075487 A CN 2011103075487A CN 201110307548 A CN201110307548 A CN 201110307548A CN 103035608 A CN103035608 A CN 103035608A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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Abstract
The invention relates to a semiconductor structure and a packing structure thereof. The semiconductor structure comprises a carrier, a plurality of protrusion lower metal layer, a plurality of copper protrusions and an organic barrier layer. The carrier comprises the surface, a protection layer and a plurality of connection guide pads, wherein the protection layers comprises a plurality of openings, the connection guide pads are exposed from the openings. The protrusion lower metal layers are formed on the connection guide pad. The copper protrusions are formed on the protrusion lower metal layer. Each copper protrusion comprises a top surface and an annular wall. The organic barrier layer comprises a protrusion cover portion which covers the top surface and the annular wall of the copper protrusion.
Description
Technical field
The present invention relates to a kind of semiconductor structure, particularly relate to a kind of semiconductor structure with organic barrier layer.
Background technology
Because the outward appearance of electronic product tends to light, thin, short, little development gradually, therefore the electric connection elements such as projection or pin must develop towards minuteness space, right when if the electric connection elements such as projection or pin contain copper, cause electrical short circuit because copper ion is free easily, and then cause the bad situation of product.
This shows that above-mentioned existing semiconductor structure obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, finished by development but have no for a long time applicable design always, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious wish of relevant dealer solves.Therefore how to found a kind of novel semiconductor structure and packaging structure thereof, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The object of the invention is to, a kind of semiconductor structure and packaging structure thereof are provided, because this semiconductor structure includes this organic barrier layer, therefore can prevent from containing copper bump and when minuteness space, cause the situation of electrical short circuit because copper ion dissociates.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of semiconductor structure that the present invention proposes, it comprises at least: a carrier, and it has a surface, and is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at, and this protective layer has a plurality of openings and described opening appears described connection pad; A plurality of projection lower metal layers, it is formed at described connection pad; A plurality of copper bumps that contain, it is formed at described projection lower metal layer, and respectively this contains the ring wall that copper bump has an end face and this end face of connection; And an organic barrier layer, it has a projection covering section, and this projection covering section covers that respectively this contains this end face and this ring wall of copper bump.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid semiconductor structure, wherein this organic barrier layer has a protective layer covering section in addition, and this protective layer covering section covers this protective layer.
Aforesaid semiconductor structure, wherein the thickness of this organic barrier layer is less than 10um.
Aforesaid semiconductor structure, wherein the viscosity scope 1-1.2cp of this organic barrier layer.
Aforesaid semiconductor structure, wherein the material of this organic barrier layer is selected from high-molecular organic material.
Aforesaid semiconductor structure, wherein this organic barrier layer be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them.
Aforesaid semiconductor structure, wherein this organic barrier layer is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water.
Aforesaid semiconductor structure, wherein this carrier be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them.
Aforesaid semiconductor structure, wherein respectively this projection lower metal layer has a ringwall, and this projection covering section covers respectively this ringwall of this projection lower metal layer.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of semiconductor structure that the present invention proposes, it comprises at least: a carrier, and it has a surface, and is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at, and this protective layer has a plurality of openings and described opening appears described connection pad; A plurality of copper bumps that contain, it is formed at described connection pad, and respectively this contains the ring wall that copper bump has an end face and this end face of connection; And an organic barrier layer, it has a projection covering section, and this projection covering section covers that respectively this contains this end face and this ring wall of copper bump.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid semiconductor structure, wherein the thickness of this organic barrier layer is less than 10um.
Aforesaid semiconductor structure, wherein the range of viscosities of this organic barrier layer is 1-1.2cp.
Aforesaid semiconductor structure, wherein the material of this organic barrier layer is selected from high-molecular organic material.
Aforesaid semiconductor structure, wherein this organic barrier layer be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them.
Aforesaid semiconductor structure, wherein this organic barrier layer is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water.
Aforesaid semiconductor structure, wherein this carrier be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them.
The object of the invention to solve the technical problems realizes in addition more by the following technical solutions.A kind of semiconductor packaging structure according to the present invention's proposition, it comprises at least: semiconductor structure, it comprises: a carrier, it has a surface, and is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at, and this protective layer has a plurality of openings and described opening appears described connection pad; A plurality of projection lower metal layers, it is formed at described connection pad; A plurality of copper bumps that contain, it is formed at described projection lower metal layer, and respectively this contains the ring wall that copper bump has an end face and this end face of connection; And an organic barrier layer, it has a projection covering section, and this projection covering section covers that respectively this contains this ring wall of copper bump; And a substrate, it has a plurality of connection gaskets and a welding resisting layer, and this welding resisting layer has a plurality of flutings to appear described connection gasket, and described connection gasket is incorporated into described this projection covering section that contains copper bump and this organic barrier layer and covers this welding resisting layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid semiconductor packaging structure, wherein this organic barrier layer has a protective layer covering section in addition, and this protective layer covering section covers this protective layer.
Aforesaid semiconductor packaging structure, wherein the thickness of this organic barrier layer is less than 10um.
Aforesaid semiconductor packaging structure, wherein the range of viscosities of this organic barrier layer is 1-1.2cp.
Aforesaid semiconductor packaging structure, wherein the material of this organic barrier layer is selected from high-molecular organic material.
Aforesaid semiconductor packaging structure, wherein this organic barrier layer be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them.
Aforesaid semiconductor packaging structure, wherein this organic barrier layer is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water.
Aforesaid semiconductor packaging structure, wherein this carrier be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them.
Aforesaid semiconductor packaging structure, wherein respectively this projection lower metal layer has a ringwall, and this projection covering section covers respectively this ringwall of this projection lower metal layer.
The present invention compared with prior art has obvious advantage and beneficial effect.As known from the above; for achieving the above object; the invention provides a kind of semiconductor structure; it comprises a carrier; a plurality of projection lower metal layers; a plurality of copper bump and organic barrier layers of containing; this carrier has a surface; one is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at; this protective layer has a plurality of openings and those openings appear those connection pads; those projection lower metal layers are formed at those connection pads; those contain copper bump and are formed at those projection lower metal layers; respectively this contains the ring wall that copper bump has an end face and this end face of connection; this organic barrier layer has a projection covering section, and respectively this contains this end face and this ring wall of copper bump in this projection covering section covering.Because this semiconductor structure includes this organic barrier layer, can prevent that therefore those from containing copper bump and causing the situation of electrical short circuit because copper ion dissociates when minuteness space.
By technique scheme, semiconductor structure of the present invention and packaging structure thereof have following advantages and beneficial effect at least: in the present invention, because this semiconductor structure includes this organic barrier layer, can prevent that therefore those from containing copper bump and causing the situation of electrical short circuit because copper ion dissociates when minuteness space.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Fig. 1 is according to the first preferred embodiment of the present invention, a kind of schematic cross-section of semiconductor structure.
Fig. 2 is according to the second preferred embodiment of the present invention, the schematic cross-section of another kind of semiconductor structure.
Fig. 3 is according to the 3rd preferred embodiment of the present invention, the schematic cross-section of another semiconductor structure.
Fig. 4 A to Fig. 4 G is according to the first preferred embodiment of the present invention, the schematic cross-section of this semiconductor structure technique.
Fig. 5 is according to the first preferred embodiment of the present invention, uses the formed semiconductor packaging structure of this semiconductor structure.
10: semiconductor packaging structure 100: semiconductor structure
110: carrier 111: surface
112: protective layer 112a: opening
113: connection pad
120: projection lower metal layer 121: ringwall
130: contain copper bump 131: end face
132: ring wall
140: organic barrier layer 141: projection covering section
142: protective layer covering section
200: semiconductor structure
210: carrier 211: surface
212: protective layer 212a: opening
213: connection pad
220: contain copper bump 221: end face
222: ring wall
230: organic barrier layer 231: projection covering section
300: substrate
310: connection gasket 320: welding resisting layer
321: fluting
M: copper-containing metal layer P: photoresist layer
P1: projection opening
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, semiconductor structure and its embodiment of packaging structure, structure, feature and effect thereof to foundation the present invention proposes are described in detail as follows.
See also shown in Figure 1; it is the first preferred embodiment of the present invention; a kind of semiconductor structure 100 comprises a carrier 110; a plurality of projection lower metal layers 120; a plurality of copper bump 130 and organic barrier layers 140 of containing; this carrier 110 has a surface 111; one is formed at protective layer 112 and a plurality of connection pad 113 that is formed at this surface 111 on this surface 111; this protective layer 112 has a plurality of opening 112a and those openings 112a appears those connection pads 113; this carrier 110 can be selected from silicon substrate; glass substrate; ceramic substrate or copper clad laminate one of them; in the present embodiment; this carrier 110 can be silicon substrate; those projection lower metal layers 120 are formed at those connection pads 113; those contain copper bump 130 and are formed at those projection lower metal layers 120; respectively this contains the ring wall 132 that copper bump 130 has an end face 131 and this end face 131 of connection; this organic barrier layer 140 has a projection covering section 141, and respectively this contains this end face 131 and this ring wall 132 of copper bump 130 in these projection covering section 141 coverings.Preferably, respectively this projection lower metal layer 120 has a ringwall 121, this projection covering section 141 covers respectively this ringwall 121 of this projection lower metal layer 120, in the present embodiment, the thickness of this organic barrier layer 140 is less than 10um, the material of this organic barrier layer 140 is selected from high-molecular organic material, this organic barrier layer 140 be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them, its structural formula is as follows:
Phenyl joins three azoles phenylimidazoles
Substituting phenylimidazole aromatic hydroxyl imidazoles
This organic barrier layer 140 is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water, and the range of viscosities of this organic barrier layer mixture is 1-1.2cp.Because this semiconductor structure 100 includes this organic barrier layer 140, can prevent that therefore those from containing copper bump 130 and causing the situation of electrical short circuit because copper ion dissociates when minuteness space.
Perhaps, see also shown in Figure 2ly, it is the second preferred embodiment of the present invention, and in the present embodiment, this organic barrier layer 140 has a protective layer covering section 142 in addition, and this protective layer covering section 142 covers these protective layers 112.In addition; see also shown in Figure 3; it is the 3rd preferred embodiment of the present invention; a kind of semiconductor structure 200 includes a carrier 210 at least; a plurality of copper bump 220 and organic barrier layers 230 of containing; this carrier 210 has a surface 211; one is formed at protective layer 212 and a plurality of connection pad 213 that is formed at this surface 211 on this surface 211; this protective layer 212 has a plurality of opening 212a and those openings 212a appears those connection pads 213; this carrier 210 can be selected from silicon substrate; glass substrate; ceramic substrate or copper clad laminate one of them; in the present embodiment; this carrier 210 can be silicon substrate; those contain copper bump 220 and are formed at those connection pads 213; respectively this contains the ring wall 222 that copper bump 220 has an end face 221 and this end face 221 of connection; this organic barrier layer 230 has a projection covering section 231; respectively this contains this end face 221 and this ring wall 222 of copper bump 220 in these projection covering section 231 coverings; the thickness of this organic barrier layer 230 is less than 10um; the material of this organic barrier layer 230 is selected from high-molecular organic material; this organic barrier layer 230 is selected from phenyl connection three and connects azoles; phenylimidazole; substituting phenylimidazole or aromatic hydroxyl imidazoles one of them; and this organic barrier layer 230 is by the benzimidazole compound; formic acid; ammoniacal liquor; acetic acid and water form, and the range of viscosities of this organic barrier layer mixture is 1-1.2cp.
Then, see also shown in Fig. 4 A to Fig. 4 G, it is the semiconductor structure technique of the first preferred embodiment of the present invention, it comprises the following step at least: at first, see also Fig. 4 A, one carrier 110 is provided, this carrier 110 has a surface 111, one is formed at protective layer 112 and a plurality of connection pad 113 that is formed at this surface 111 on this surface 111, this protective layer 112 has a plurality of opening 112a and those openings 112a appears those connection pads 113, this carrier 110 can be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them, in the present embodiment, this carrier 110 can be silicon substrate; Then, see also Fig. 4 B, form a plurality of projection lower metal layers 120 in those connection pads 113, those projection lower metal layers 120 extend to form in this protective layer 112 and respectively this projection lower metal layer 120 have a ringwall 121; Afterwards, see also Fig. 4 C, form a photoresist layer P in this protective layer 112 and those projection lower metal layers 120; Then, see also Fig. 4 D, this photoresist layer of patterning P opens P1 to form a plurality of projections, and those projections are opened P1 and appeared those projection lower metal layers 120; Afterwards, see also Fig. 4 E, form a copper-containing metal layer M on those projection lower metal layers 120, so that this copper-containing metal layer M forms a plurality of copper bumps 130 that contain; Then, see also Fig. 4 F, remove this photoresist layer P and contain copper bump 130 to manifest those, respectively this contains the ring wall 132 that copper bump 130 has an end face 131 and this end face 131 of connection; At last, see also Fig. 4 G, form an organic barrier layer 140 and contain copper bump 130 in those, and this organic barrier layer 140 has a projection covering section 141, respectively this contains this end face 131 of copper bump 130 in these projection covering section 141 coverings, this ring wall 132 reaches respectively this ringwall 121 of this projection lower metal layer 120, in the present embodiment, the thickness of this organic barrier layer 140 is less than 10um, the material of this organic barrier layer 140 is selected from high-molecular organic material, this organic barrier layer 140 is selected from phenyl connection three and connects azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them, its structural formula is as follows:
Phenyl joins three azoles phenylimidazoles
Substituting phenylimidazole aromatic hydroxyl imidazoles
This organic barrier layer 140 is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water, and the range of viscosities of this organic barrier layer mixture is 1-1.2cp.
In addition; see also shown in Figure 5; it is these semiconductor structure 100 formed semiconductor packaging structures 10 of using the first preferred embodiment of the present invention; it comprises semiconductor structure 100 and a substrate 300 at least; this semiconductor structure 100 comprises a carrier 110; a plurality of projection lower metal layers 120; a plurality of copper bump 130 and organic barrier layers 140 of containing; this carrier 110 has a surface 111; one is formed at protective layer 112 and a plurality of connection pad 113 that is formed at this surface 111 on this surface 111; this protective layer 112 has a plurality of opening 112a and those openings 112a appears those connection pads 113; this carrier 110 can be selected from silicon substrate; glass substrate; ceramic substrate or copper clad laminate one of them; in the present embodiment; this carrier 110 can be silicon substrate; those projection lower metal layers 120 are formed at those connection pads 113; and respectively this projection lower metal layer 120 has a ringwall 121; those contain copper bump 130 and are formed at those projection lower metal layers 120; respectively this contains the ring wall 132 that copper bump 130 has an end face 131 and this end face 131 of connection; this organic barrier layer 140 has a projection covering section 141; this projection covering section 141 covers respectively, and this this ring wall 132 that contains copper bump 130 reaches respectively this ringwall 121 of this projection lower metal layer 120; the thickness of this organic barrier layer 140 is less than 10um; the material of this organic barrier layer 140 is selected from high-molecular organic material; this organic barrier layer 140 is selected from phenyl connection three and connects azoles; phenylimidazole; substituting phenylimidazole or aromatic hydroxyl imidazoles one of them; and this organic barrier layer 140 is by the benzimidazole compound; formic acid; ammoniacal liquor; acetic acid and water form; and the range of viscosities of this organic barrier layer mixture is 1-1.2cp; this substrate 300 has a plurality of connection gaskets 310 and a welding resisting layer 320; this welding resisting layer 320 has a plurality of flutings 321 to appear those connection gaskets 310, and those connection gaskets 310 are incorporated into those these projection covering sections 141 that contain copper bump 130 and this organic barrier layer 140 and cover this welding resisting layer 320.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (25)
1. semiconductor structure is characterized in that it comprises at least:
One carrier, it has a surface, and is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at, and this protective layer has a plurality of openings and described opening appears described connection pad;
A plurality of projection lower metal layers, it is formed at described connection pad;
A plurality of copper bumps that contain, it is formed at described projection lower metal layer, and respectively this contains the ring wall that copper bump has an end face and this end face of connection; And
One organic barrier layer, it has a projection covering section, and respectively this contains this end face and this ring wall of copper bump in this projection covering section covering.
2. semiconductor structure according to claim 1 is characterized in that wherein this organic barrier layer has a protective layer covering section in addition, and this protective layer covering section covers this protective layer.
3. semiconductor structure according to claim 1 is characterized in that the thickness of this organic barrier layer wherein is less than 10um.
4. semiconductor structure according to claim 1 is characterized in that the wherein viscosity scope 1-1.2cp of this organic barrier layer.
5. semiconductor structure according to claim 1 is characterized in that wherein the material of this organic barrier layer is selected from high-molecular organic material.
6. semiconductor structure according to claim 5, it is characterized in that wherein this organic barrier layer be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them.
7. semiconductor structure according to claim 1 is characterized in that wherein this organic barrier layer is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water.
8. semiconductor structure according to claim 1, it is characterized in that wherein this carrier be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them.
9. semiconductor structure according to claim 1 is characterized in that wherein respectively this projection lower metal layer has a ringwall, and this projection covering section covers respectively this ringwall of this projection lower metal layer.
10. semiconductor structure is characterized in that it comprises at least:
One carrier, it has a surface, and is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at, and this protective layer has a plurality of openings and described opening appears described connection pad;
A plurality of copper bumps that contain, it is formed at described connection pad, and respectively this contains the ring wall that copper bump has an end face and this end face of connection; And
One organic barrier layer, it has a projection covering section, and respectively this contains this end face and this ring wall of copper bump in this projection covering section covering.
11. semiconductor structure according to claim 10 is characterized in that the thickness of this organic barrier layer wherein is less than 10um.
12. semiconductor structure according to claim 10 is characterized in that wherein the range of viscosities of this organic barrier layer is 1-1.2cp.
13. semiconductor structure according to claim 10 is characterized in that wherein the material of this organic barrier layer is selected from high-molecular organic material.
14. semiconductor structure according to claim 13, it is characterized in that wherein this organic barrier layer be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them.
15. semiconductor structure according to claim 10 is characterized in that wherein this organic barrier layer is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water.
16. semiconductor structure according to claim 10, it is characterized in that wherein this carrier be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them.
17. a semiconductor packaging structure is characterized in that it comprises at least:
Semiconductor structure, it comprises:
One carrier, it has a surface, and is formed at this surperficial protective layer and a plurality of this surperficial connection pad that is formed at, and this protective layer has a plurality of openings and described opening appears described connection pad;
A plurality of projection lower metal layers, it is formed at described connection pad;
A plurality of copper bumps that contain, it is formed at described projection lower metal layer, and respectively this contains the ring wall that copper bump has an end face and this end face of connection; And
One organic barrier layer, it has a projection covering section, and respectively this contains this ring wall of copper bump in this projection covering section covering; And
One substrate, it has a plurality of connection gaskets and a welding resisting layer, and this welding resisting layer has a plurality of flutings to appear described connection gasket, and described connection gasket is incorporated into described this projection covering section that contains copper bump and this organic barrier layer and covers this welding resisting layer.
18. semiconductor packaging structure according to claim 17 is characterized in that wherein this organic barrier layer has a protective layer covering section in addition, this protective layer covering section covers this protective layer.
19. semiconductor packaging structure according to claim 17 is characterized in that the thickness of this organic barrier layer wherein is less than 10um.
20. semiconductor packaging structure according to claim 17 is characterized in that wherein the range of viscosities of this organic barrier layer is 1-1.2cp.
21. semiconductor packaging structure according to claim 17 is characterized in that wherein the material of this organic barrier layer is selected from high-molecular organic material.
22. semiconductor packaging structure according to claim 21, it is characterized in that wherein this organic barrier layer be selected from phenyl connection three connect azoles, phenylimidazole, substituting phenylimidazole or aromatic hydroxyl imidazoles one of them.
23. semiconductor packaging structure according to claim 17 is characterized in that wherein this organic barrier layer is comprised of benzimidazole compound, formic acid, ammoniacal liquor, acetic acid and water.
24. semiconductor packaging structure according to claim 17, it is characterized in that wherein this carrier be selected from silicon substrate, glass substrate, ceramic substrate or copper clad laminate one of them.
25. semiconductor packaging structure according to claim 17 is characterized in that wherein respectively this projection lower metal layer has a ringwall, this projection covering section covers respectively this ringwall of this projection lower metal layer.
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| CN2011103075487A CN103035608A (en) | 2011-10-08 | 2011-10-08 | Semiconductor structure and package structure thereof |
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| CN104576599A (en) * | 2013-10-25 | 2015-04-29 | 联发科技股份有限公司 | Semiconductor structure |
| TWI669209B (en) * | 2018-09-28 | 2019-08-21 | 國立清華大學 | Diffusion barrier structure, and conductive laminate and manufacturing method thereof |
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| US11331883B2 (en) | 2018-09-28 | 2022-05-17 | National Tsing Hua University | Diffusion barrier structure, and conductive laminate and manufacturing method thereof |
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Application publication date: 20130410 |