CN103034061B - A kind of method for making of substrate - Google Patents
A kind of method for making of substrate Download PDFInfo
- Publication number
- CN103034061B CN103034061B CN201210540524.0A CN201210540524A CN103034061B CN 103034061 B CN103034061 B CN 103034061B CN 201210540524 A CN201210540524 A CN 201210540524A CN 103034061 B CN103034061 B CN 103034061B
- Authority
- CN
- China
- Prior art keywords
- auxiliary patterns
- film
- layer
- viewing area
- patterning processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
Embodiments provide a kind of method for making of substrate, relate to display technique field, be coated with bad incidence when can avoid or reduce photoresist coating, and then improve volume production product yield; The method for making of described substrate comprises: make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described the first film for described in any layer at least in double-layer films except last layer film; It is vertical that described first edge and photoresist are coated with direction, and described first auxiliary patterns is stepped along at least one side of the xsect in described photoresist coating direction.For the manufacture of display panel.
Description
Technical field
The present invention relates to display technique field, particularly relate to a kind of method for making of substrate.
Background technology
Photoresist coating is the necessary link of photoetching process, the utilization factor of photoresist during in order to improve coating, at present, LCD industry is applied to main flow with slit in coating process, in raising photoresist utilization factor, while enhancing productivity, also there is more scabrous problem, namely there is the problem of coating bad (Uncoating).
At present, form Thin Film Transistor (TFT) liquid crystal display (ThinFilmTransistorLiquidCrystalDisplay, TFT-LCD) array base palte and the rete of color membrane substrates are generally made up of 5 layers or more layers, when wherein forming pattern by patterning processes, all have to pass through photoresist and be coated with this step.But, when thin layer more below forms pattern, the required section difference of crossing over of coating photoresist is larger, coating bad probability occurs in coating process and just increases, in addition, glass substrate edge surface state difference waits and all makes the bad possibility increase of coating occurs in coating process.
Such as, as shown in Figure 1, when the nozzle 60 of the apparatus for coating being coated with photoresist 30 is coated with from transparency carrier 10 edge, through section difference region, photoresist 30 can be caused to be coated with bad generation.
Summary of the invention
Embodiments of the invention provide a kind of method for making of substrate, be coated with bad incidence, and then improve volume production product yield when can avoid or reduce photoresist coating.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, provide a kind of method for making of substrate, comprising: make at least double-layer films on the transparent substrate, and form display pattern respectively by patterning processes in viewing area; Wherein, make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described the first film for described in any layer at least in double-layer films except last layer film; It is vertical that described first edge and photoresist are coated with direction, and described first auxiliary patterns is stepped along at least one side of the xsect in described photoresist coating direction.
Optionally, describedly make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make at least three layers of conductive film on the transparent substrate, and form display pattern respectively by patterning processes in viewing area; Described the first film for described in any layer at least three layers of conductive film except last layer of conductive film.
Further, describedly make at least double-layer films on the transparent substrate, and also comprise at viewing area formation display pattern respectively by patterning processes: make the second film on the transparent substrate, and by patterning processes at least one first edge described, form the second auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described second conductive film for described in any layer film at least in double-layer films except last layer film and described the first film; The rectangular shape of described second auxiliary patterns xsect.
Further, described first auxiliary patterns is positioned on described second auxiliary patterns.
Optionally, describedly make at least double-layer films on the transparent substrate, and also comprise at viewing area formation display pattern respectively by patterning processes: make semiconductive thin film on the transparent substrate, and by patterning processes at least one first edge described, form the 3rd auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, the rectangular shape of described 3rd auxiliary patterns xsect, and described 3rd auxiliary patterns is positioned under described first auxiliary patterns.
Based on the method for making of above-mentioned various possible array base palte, further alternative, described at least three layers of conductive film comprise: source and drain metallic film, grid metallic film, pixel electrode film.
Further, describedly make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern to comprise in viewing area: the described source and drain of making on the transparent substrate metallic film simultaneously, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form source-drain electrode pattern in viewing area simultaneously.
Optionally, describedly make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make at least four layers of resin film on the transparent substrate, and form display pattern respectively by patterning processes in viewing area; Described the first film for described in any layer at least four layers of resin film except last one deck resin film.
Further, described first resin film is the resin film making formation at first.
Based on above-mentioned various possible substrate, further, at least one first edge described is two the first edges.
Further, the xsect of described first auxiliary patterns is symmetric shape.
Further, described first auxiliary patterns comprises Part I, Part II and Part III, the thickness of described Part I is higher than the thickness of described Part II or Part III, and described Part II and Part III lay respectively at the left and right sides of described Part I, on photoresist coating direction, the length of Part I is 0.2mm-0.5mm, and the length of Part II is 0.2mm-0.5mm, and the length of Part III is 0.2mm-0.5mm.
Preferably, described first auxiliary patterns is apart from described first edge 20cm ~ 30cm.
Embodiments provide a kind of method for making of substrate, in any layer at least double-layer films except last layer film, by patterning processes at least one first edge at described transparency carrier, form the auxiliary patterns with described first sides aligned parallel, and form display pattern in viewing area simultaneously; When the film in follow-up making is coated with photoresist to form this layer pattern, because described first edge and photoresist are coated with the effect of the vertical and described auxiliary patterns in direction, when this auxiliary patterns is formed in the first edge of coating section start, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through auxiliary patterns, the pattern that section difference again in the viewing area of section start is high, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield; When this first auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Photoresist is there is to be coated with bad schematic diagram in Fig. 1 in prior art;
The structural representation one of a kind of array base palte that Fig. 2 provides for the embodiment of the present invention;
The structural representation two of a kind of array base palte that Fig. 3 provides for the embodiment of the present invention;
The structural representation three of a kind of array base palte that Fig. 4 provides for the embodiment of the present invention;
The intention of the first auxiliary patterns forming process that Fig. 5 provides for the embodiment of the present invention;
The structural representation four of the array base palte that Fig. 6 provides for the embodiment of the present invention;
The structural representation five of a kind of array base palte that Fig. 7 provides for the embodiment of the present invention;
The structural representation six of a kind of array base palte that Fig. 8 provides for the embodiment of the present invention;
The structural representation seven of a kind of array base palte that Fig. 9 provides for the embodiment of the present invention;
The structural representation eight of a kind of array base palte that Figure 10 provides for the embodiment of the present invention;
The structural representation one of the another kind of array base palte that Figure 11 provides for the embodiment of the present invention;
The structural representation two of the another kind of array base palte that Figure 12 provides for the embodiment of the present invention;
The structural representation three of the another kind of array base palte that Figure 13 provides for the embodiment of the present invention;
The structural representation four of the another kind of array base palte that Figure 14 provides for the embodiment of the present invention;
The structural representation of another array base palte that Figure 15 provides for the embodiment of the present invention;
The structural representation one of a kind of color membrane substrates that Figure 16 provides for the embodiment of the present invention;
The structural representation two of a kind of color membrane substrates that Figure 17 provides for the embodiment of the present invention;
The structural representation three of a kind of color membrane substrates that Figure 18 provides for the embodiment of the present invention;
The structural representation four of a kind of color membrane substrates that Figure 19 provides for the embodiment of the present invention;
The structural representation five of a kind of color membrane substrates that Figure 20 provides for the embodiment of the present invention;
The structural representation six of a kind of color membrane substrates that Figure 21 provides for the embodiment of the present invention.
Reference numeral:
10-transparency carrier, 10a-first edge; 101a-grid, 101b-grid line, 101c-grid line goes between; 102-gate insulation layer; 103-semiconductor active layer, 103a-the 3rd auxiliary patterns; 104a-source electrode, 104b-drains, 104c-data line, 104d-data cable lead wire; 105-first auxiliary patterns; 106-protective seam, 107-via hole; 108-pixel electrode layer; 109-second auxiliary patterns; The black matrix pattern of 201-; The red photoresistance pattern of 202-, 204a-red resin film; The green photoresistance pattern of 204-; 205-blue light resistance pattern; 20-the first film; 30-photoresist; 40-half gray-tone mask version, 40a-non-exposed area, 40b-Partial exposure district; 60-nozzle.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiments provide a kind of method for making of substrate, comprising: make at least double-layer films on the transparent substrate, and form display pattern respectively by patterning processes in viewing area; Wherein, make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described the first film for described in any layer at least in double-layer films except last layer film; It is vertical that described first edge and photoresist are coated with direction, and described first auxiliary patterns is stepped along at least one side of the xsect in described photoresist coating direction.
It should be noted that, said display pattern refers to when this substrate is for making display panel herein, and this display pattern to make this display panel carry out the requisite pattern shown.For array base palte, can form grid, grid line and grid line lead pattern by patterning processes, semiconductor active layer pattern, source-drain electrode, data line and data cable lead wire pattern, pixel electrode pattern etc., these are all display patterns; For color membrane substrates, can form black matrix, red photoresistance pattern, green photoresistance pattern, blue light resistance pattern etc. successively by patterning processes, these are all display patterns.
Embodiments provide a kind of method for making of substrate, in any layer at least double-layer films except last layer film, by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, and form display pattern in viewing area simultaneously, when the film in follow-up making is coated with photoresist to form this layer pattern, due to described first edge and photoresist, to be coated with direction vertical, and described first auxiliary patterns is coated with the xsect in direction at least one side along described photoresist is stepped, when this first auxiliary patterns is formed in the first edge of coating section start, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through at least one side be stair-stepping first auxiliary patterns, the pattern that section difference again in the viewing area of section start is high, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield, when this first auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
Further, describedly make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make at least three layers of conductive film on the transparent substrate, and form display pattern respectively by patterning processes in viewing area; Described the first film for described in any layer at least three layers of conductive film except last layer of conductive film.
Further, describedly make at least double-layer films on the transparent substrate, and also comprise at viewing area formation display pattern respectively by patterning processes: make the second film on the transparent substrate, and by patterning processes at least one first edge described, form the second auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described second film for described in any layer conductive film at least in double-layer films except last layer of conductive film and described the first film; The rectangular shape of described second auxiliary patterns xsect.
Further, described first auxiliary patterns is positioned on described second auxiliary patterns.
Embodiment one, embodiments provides a kind of method for making of array base palte, comprising: make at least three layers of conductive film on the transparent substrate, and forms display pattern respectively by patterning processes in viewing area; Wherein, describedly make at least three layers of conductive film on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described the first film for described in any layer at least three layers of conductive film except last layer film; It is vertical that described first edge and photoresist are coated with direction, and at least one side of described first auxiliary patterns xsect is stepped.
In addition, described first auxiliary patterns and any layer conductive layer pattern are without being electrically connected.
It should be noted that, described conductive film is one deck conductive material applied on the transparent substrate; Described display pattern, described first auxiliary patterns are the pattern being formed in this layer on film after patterning processes, and wherein patterning processes is photoresist coating, exposure, development, etching, stripping etc.When described array base palte be one piece be used as the array base palte of display panel time, described viewing area only refers to viewing area and the lead-in wire of the array base palte of one piece of display panel; When described array base palte is a large substrate, it is when cutting can be divided into the array base palte of multiple display panel, and described viewing area refers to the set of viewing area on the array base palte of each display panel and lead-in wire.First edge refers to two limits being coated with the vertical described transparency carrier in direction with photoresist, and therefore, described first edge has at most two.
In addition, described first auxiliary patterns is the display pattern relatively formed in viewing area, and namely described first auxiliary patterns cuts little ice for the patterning forming display.
Embodiments provide a kind of method for making of array base palte, in any layer at least three layers of conductive film except last layer of conductive film, by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, and form display pattern in viewing area simultaneously, when the film in follow-up making is coated with photoresist to form this layer pattern, due to described first edge and photoresist, to be coated with direction vertical, and described first auxiliary patterns is coated with the xsect in direction at least one side along described photoresist is stepped, when this first auxiliary patterns is formed in the first edge of coating section start, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through at least one side be stair-stepping first auxiliary patterns, the pattern that section difference again in the viewing area of section start is high, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield, when this first auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
Further, described method also comprises: make the second film on the transparent substrate, and by patterning processes at least one first edge described, forms the second auxiliary patterns with described first sides aligned parallel, forms display pattern in viewing area simultaneously; Wherein, described second film for described in any layer conductive film at least three layers of conductive film except last layer of conductive film and described the first film; The rectangular shape of described second auxiliary patterns xsect.
In addition, described second auxiliary patterns and any layer conductive layer pattern are without being electrically connected.
Further, described first auxiliary patterns is positioned on described second auxiliary patterns.
It should be noted that, said first auxiliary patterns is positioned on described second auxiliary patterns herein, is in chronological order, that is, first form the second auxiliary patterns and form the first auxiliary patterns again.
In order to the aspect illustrated, in the description of following example, by the method for making of array base palte, to be formed successively, at least three layers of conductive film are film A, film B, film C, the like be described.
Example 1, below in conjunction with the structure shown in Fig. 2 to Figure 10, for a kind of method for making of bottom gate type array base palte, its manufacturing process is as follows:
S101, as shown in Figure 2, make film A on the transparent substrate 10, namely, the second above-mentioned film, grid 101a, grid line 101b (marking in figure 9 and in figure 10), grid line lead-in wire 101c (marking in figure 9 and in figure 10) pattern is formed in regulation region by patterning processes process, simultaneously at first edge 10a (marking an in figure 9 and in figure 10) place of described transparency carrier 10, form the second auxiliary patterns 109 with described first sides aligned parallel.
Wherein, it is vertical that described first edge 10a and photoresist are coated with direction, the rectangular shape of xsect of described second auxiliary patterns 109, and described second auxiliary patterns 109 with any layer conductive layer pattern without being electrically connected.
Herein, because film A forms grid by linking up technique, therefore, this film A also can be described as grid metallic film, and form grid metal layer pattern by patterning processes, wherein this grid metal layer pattern comprises gate pattern, grid line pattern, grid line lead pattern.
Concrete, can magnetically controlled sputter method be used, make a layer thickness on the transparent substrate 10 and exist
extremely
metallic film.Metal material can adopt the metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, also can use the unitized construction of above-mentioned different materials film.Then, with mask by patterning processes process such as exposure, development, etching, strippings, the regulation region of transparency carrier 10 is formed the grid line 101b of many transverse directions and the grid 101a be connected with grid line and grid line to go between the pattern of 101c, simultaneously at a first 10a place, edge of described transparency carrier 10, form the second auxiliary patterns 109 with described first sides aligned parallel, the rectangular shape of xsect of wherein said second auxiliary patterns 109, and described second auxiliary patterns 109 with any layer conductive layer pattern without being electrically connected.
In the accompanying drawing of this example, only show the second auxiliary patterns 109 being positioned at first edge, but the embodiment of the present invention is not limited to this.
It should be noted that, described regulation region all refers to above-mentioned viewing area if no special instructions in all embodiments of the present invention.
S102, as shown in Figure 3, grid 101a, grid line 101b form gate insulation layer 102, and make layer of semiconductor film on gate insulation layer 102, form semiconductor active layer 103 pattern by patterning processes process in regulation region.
Owing to forming grid 101a in step S101, while grid line 101b, the second auxiliary patterns 109 with described first sides aligned parallel is being formed with the first 10a place, edge that photoresist is coated with direction vertical, on the one hand, when described second auxiliary patterns 109 is positioned at photoresist coating original position, when forming the coating photoresist before semiconductor active layer 103 pattern by patterning processes process in step s 102, nozzle 60 can be made to be coated with from the top of the second auxiliary patterns 10, can avoid or reduce the incidence that coating that the larger section of difference due to the grid 101a pattern of initial application place place front layer cause is bad like this, on the other hand, when described second auxiliary patterns 109 is positioned at photoresist coating end position place, can avoid or reduce the coating caused due to photoresist resorption bad.
Concrete, can on gate insulation layer 102 depositing metal oxide semiconductive thin film, then, with common mask, the transparency carrier 10 being formed with semiconductive thin film is exposed, develop, is etched, formation semiconductor active layer 103 pattern.
S103, as shown in Figure 4, semiconductor active layer 103 makes film B, namely, above-mentioned the first film, source electrode 104a, drain electrode 104b, data line 104c (marking in figure 9 and in figure 10), data cable lead wire 104d (marking in figure 9 and in figure 10) pattern is formed in regulation region by patterning processes process, simultaneously at described first edge 10a (marking in figure 9 and in figure 10) place, form the first auxiliary patterns 105 with described first sides aligned parallel.
Because this film B forms source-drain electrode by patterning processes, therefore, this film B also can be described as source and drain metallic film, and form source and drain metal layer pattern by patterning processes, wherein this source and drain metal pattern comprises source-drain electrode pattern, data line pattern, data cable lead wire pattern.
Wherein, it is vertical that described first edge 10a and photoresist are coated with direction, and described first auxiliary patterns 105 is stepped along at least one side of the xsect in described photoresist coating direction, and described first auxiliary patterns 105 with any layer conductive layer pattern without being electrically connected.
In the accompanying drawing of this example, only show the first auxiliary patterns 105 being positioned at first edge, but the embodiment of the present invention is not limited to this.
Concrete, a layer thickness can be deposited on semiconductor active layer 103 and exist
arrive
metallic film.At regulation region mask to base board to explosure, development, etching, form source electrode 104a, drain electrode 104b, data line 104c, the pattern of data cable lead wire 104d, be coated with vertical described first 10a place, edge, direction with photoresist simultaneously, expose by half gray-tone mask version, development, etching, form the first auxiliary patterns 105 with described first sides aligned parallel, and this first auxiliary patterns 105 is coated with the xsect in direction at least one side along photoresist is stepped, described first auxiliary patterns and source electrode 104a, drain electrode 104b, data line 104c, the pattern of data cable lead wire 104d is without electrical connection.
Wherein, if the second auxiliary patterns 109 is positioned at photoresist coating original position described in step S101, in photoresist coating then before forming source electrode 104a, drain electrode 104b pattern, the top coating of second auxiliary patterns 10 that nozzle 60 can be made formerly to be formed from S101, like this, in photoresist coating process, can avoid being coated with bad incidence, and then improve volume production product yield; If when the second auxiliary patterns 109 described in S101 is positioned at photoresist coating end position place, can avoid or reduce the coating caused due to photoresist resorption bad.
Above-mentioned while formation source electrode 104a, drain electrode 104b, data line 104c, data cable lead wire 104d pattern, form the first auxiliary patterns 105, just can realize by one and half gray-tone mask versions.
Wherein, as shown in Figure 5, the forming process of the first auxiliary patterns can be: be coated with vertical first edge of direction first at transparency carrier 10 with photoresist, half gray-tone mask version 40 is used to expose to the photoresist 30 on the first film 20, this half gray-tone mask version 40 comprises non-exposed area 40a and Partial exposure district 40b, and described Partial exposure district 40b is positioned at the left and right sides of described non-exposed area 40a; When after overexposure, development, etching, stripping, form the first auxiliary patterns 105 in Fig. 5.
It should be noted that, these two sides of sentencing the xsect of the first auxiliary patterns 105 of formation all have and to be steppedly described for example, but the present invention is not limited to this, can be to only have a side to have stepped.
S104, as Figure 6-Figure 7, source electrode 104a, drain electrode 104b, data line 104c, data cable lead wire 104d make protective seam 106, and by patterning processes process, the protective seam 106 above drain electrode 104b form the via hole 107 exposing this drain electrode 104b.
Concrete, a layer thickness can be applied on source and drain metal level and exist
arrive
protective seam, its material is silicon nitride or transparent organic resin material normally, by mask, utilize patterning processes drain electrode 104b above protective seam 106 on formed expose described drain electrode 104b via hole 107.
While forming source electrode 104a, drain electrode 104b, data line 104c, data cable lead wire 104d in step s 103, the first auxiliary patterns 105 with described first sides aligned parallel is being formed with the described first 10a place, edge that photoresist is coated with direction vertical, and when described first auxiliary patterns 105 is positioned at photoresist coating original position, when making the coating photoresist form via hole 107 in S104 before, can avoid or reduce the incidence that the coating that causes due to the source electrode 104a of initial application place place front layer, larger section of difference of drain electrode 104b pattern is bad; When described first auxiliary patterns 105 is positioned at photoresist coating end position place, can avoid or reduce the coating caused due to photoresist resorption bad.Wherein, herein along photoresist coating direction, described first auxiliary patterns 105 being designed to its xsect, to have at least one side be stair-stepping pattern, to be two sections of section differences by a section difference, thus when reducing next layer pattern of making, the coating that the nozzle of coating photoresist causes at the high figure of section difference through coating reference position is bad.
S105, as shown in Figure 8, protective seam 106 makes film C, in regulation region, form pixel electrode layer 108 pattern by patterning processes.
Because this film C forms pixel electrode by patterning processes, therefore, this film C also can be described as pixel electrode film, and form pixel electrode layer pattern by patterning processes, wherein this pixel electrode layer pattern comprises pixel electrode pattern.
Concrete, chemical vapor deposition method can be utilized on whole protective seam 106 to deposit layer of conductive film layer, obtain pixel electrode pattern by patterning processes afterwards.Conventional conductive film can be ITO (IndiumTinOxides, indium tin oxide) or IZO (IndiumZincOxide, indium-zinc oxide), and thickness exists
extremely
between.
After above-mentioned steps, as shown in Fig. 9-Figure 10, it is the vertical view of array base palte be made into.As shown in Figure 9, when photoresist coating direction be from left to right time, described first auxiliary patterns 105 is formed in and is coated with the first 10a place, edge on the vertical left side, direction or the first 10a place, edge (not marking in figure) on the right with described photoresist, now, because data line 104c is parallel with the first edge 10a, make the first auxiliary patterns 105 can not be crossing with data line 104c, therefore this first auxiliary patterns 105 be continuous.In addition, as shown in Figure 10, when photoresist coating direction be from top to bottom time, described first auxiliary patterns 105 is formed in the first 10a place, edge and/or the first following 10a place, edge (not marking in figure) that are coated with vertical top, direction with described photoresist, now, because data line 104c is vertical with the first edge 10a, make the meeting of this first auxiliary patterns 105 crossing with data cable lead wire 104d, thus described first auxiliary patterns need be formed as discrete state to avoid data cable lead wire 104d.
In addition, other layer of conductive film can also be made on the transparent substrate 10, to form public electrode layer pattern, not repeat them here.
It should be noted that, in embodiments of the present invention only with while formation grid, form the second auxiliary patterns, while formation source, drain pattern, form the first auxiliary patterns, but the embodiment of the present invention is not limited to this, preferably, the excellent of described second auxiliary patterns is positioned at the first auxiliary patterns.
Example 2, below in conjunction with the structure shown in Figure 11 to Figure 14, for a kind of method for making of top gate type array base palte, its manufacturing process is as follows:
S201, as shown in figure 11, make film A on the transparent substrate 10, namely the second above-mentioned film, in regulation region, pixel electrode layer 108 pattern is formed by patterning processes process, simultaneously at first edge 10a (marking an in figure 9 and in figure 10) place of described transparency carrier 10, form the second auxiliary patterns 109 with described first sides aligned parallel.
Wherein, it is vertical that described first edge 10a and photoresist are coated with direction, the rectangular shape of xsect of described second auxiliary patterns 109, and described second auxiliary patterns 109 and any layer display pattern are without being electrically connected.
In the accompanying drawing of this example, only show the second auxiliary patterns 109 being positioned at first edge, but the embodiment of the present invention is not limited to this.
Shown in S202, reference Figure 11, pixel electrode layer 108 makes film B, namely above-mentioned the first film, formed the pattern of source electrode 104a, drain electrode 104b, data line 104c (marking in figure 9 and in figure 10), data cable lead wire 104d (marking in figure 9 and in figure 10) in regulation region by patterning processes process, wherein said drain electrode 104b is connected with pixel electrode 108; Meanwhile, at described first 10a place, edge, form the first auxiliary patterns 105 with described first sides aligned parallel.
Wherein, it is vertical that described first edge 10a and photoresist are coated with direction, and described first auxiliary patterns 105 is stepped along at least one side of the xsect in described photoresist coating direction, and described first auxiliary patterns 105 with any layer conductive layer pattern without being electrically connected.
In the accompanying drawing of this example, only show the first auxiliary patterns 105 being positioned at first edge, but the embodiment of the present invention is not limited to this.
While forming pixel electrode layer 108 pattern in step s 201, the second auxiliary patterns 109 with described first sides aligned parallel is being formed with the first 10a place, edge that photoresist is coated with direction vertical, on the one hand, when described second auxiliary patterns 109 is positioned at photoresist coating original position, source electrode 104a is formed by patterning processes process in step S202, drain electrode 104b before coating photoresist time, nozzle 60 can be made to be coated with from the top of the second auxiliary patterns 10, can avoid or reduce the incidence that coating that the larger section of difference due to pixel electrode layer 108 pattern of initial application place place front layer cause is bad like this, on the other hand, when described second auxiliary patterns 109 is positioned at photoresist coating end position place, can avoid or reduce the coating caused due to photoresist resorption bad.
S203, as shown in Figure 12-Figure 13, at source electrode 104a, drain electrode 104b, data line 104c, data cable lead wire 104d makes layer of semiconductor film, form semiconductor active layer 103 pattern by patterning processes process in regulation region.
Owing to forming source electrode 104a in step S202, drain electrode 104b, data line 104c, while data cable lead wire 104d, the first auxiliary patterns 105 with described first sides aligned parallel is being formed with the first 10a place, edge that photoresist is coated with the vertical transparency carrier in direction 10, and when described first auxiliary patterns 105 is positioned at photoresist coating original position, when making the coating photoresist 30 form semiconductor active layer 103 pattern in S203 before, avoid or reduce the source electrode 104a due to initial application place place front layer, the coating that larger section of difference of drain electrode 104b pattern causes is bad, when described first auxiliary patterns 105 is positioned at photoresist coating end position place, can avoid or reduce the coating caused due to photoresist resorption bad.
S204, as shown in figure 14, semiconductor active layer 103 forms gate insulation layer 102.
Shown in S205, reference Figure 14, gate insulation layer 102 makes film C, form grid 101a, grid line 101b, grid line lead-in wire 101c (marking at Fig. 9 and Figure 10) pattern by patterning processes process in regulation region.
With the effect of the first auxiliary patterns 105 in above-mentioned steps S203, when making to be formed the front photoresist coating of grid 101a, grid line 101b (marking in figure 9 and in figure 10), grid line lead-in wire 101c (marking at Fig. 9 and Figure 10) in S205, the incidence that coating is bad can be avoid or reduced.
After above-mentioned steps, shown in figure 9-Figure 10, be the vertical view of array base palte be made into, do not repeat them here.
For two sides of the xsect of the first auxiliary patterns formed, all there is stepped being described in embodiments of the present invention, but the present invention is not limited to this, can be to only have a side to have stepped.
For above-mentioned two examples, when making more than three layers conductive films on the transparent substrate 10, on other layer of conductive film except last layer film, the first film, the second film, also can form the pattern identical with described second auxiliary patterns 109 under the first auxiliary patterns 105, it is identical that its formation method and described second auxiliary patterns 109 form method, do not repeat them here.
Further, described method also comprises: make semiconductive thin film on the transparent substrate, and by patterning processes at least one first edge described, form the 3rd auxiliary patterns 103a with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, the rectangular shape of described 3rd auxiliary patterns 103a xsect, and described 3rd auxiliary patterns 103a is positioned under described first auxiliary patterns 105.
Herein, described display pattern is semiconductor active layer pattern 103.
Example, on the basis of above-mentioned first example, can be in step s 102, at formation semiconductor active layer 103 pattern, simultaneously at a first 10a place, edge of described transparency carrier 10, form the 3rd auxiliary patterns 103a with described first sides aligned parallel, wherein, the rectangular shape of described 3rd auxiliary patterns 103a xsect.After subsequent step, form array base-plate structure schematic diagram as shown in figure 15.Its forming process and described 3rd auxiliary patterns 103a do not repeat them here for the effect of rear layer.
Preferably, at least one first edge described is two the first edges.
Like this, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through auxiliary patterns, the higher pattern of section difference in the viewing area of section start, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield; When auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
It should be noted that, when two the first edges at described transparency carrier, when forming the first auxiliary patterns with described first sides aligned parallel respectively, these two first auxiliary patterns can identical also can not be identical, the xsect along photoresist coating direction only need be made to have at least a side to be stepped.When forming the second auxiliary patterns respectively, or during the 3rd auxiliary patterns, preferably identical two the first edges.
Preferably, the xsect of described first auxiliary patterns 105 is symmetric shape.
Example, with reference to the first auxiliary patterns 105 in accompanying drawing (such as Fig. 8), its xsect is symmetrical stairstepping, it can the process of reference diagram 5 in forming process, in the case, what need make mask is positioned at the in the same size of the Partial exposure district 40b of both sides, non-exposed area 40, and need etching technics be coordinated, make to expose through the Partial exposure district of the mask left and right sides, to develop and the corresponding part of the first film retained after etching is in the same size, like this, last the first auxiliary patterns 105 formed just can be made to be symmetric shape along the xsect in photoresist coating direction.
Like this, in the photoresist coating process forming next layer pattern, because two sides of the first auxiliary patterns of front layer are stepped, when photoresist is coated with, the section difference of front layer pattern can be two height by this first auxiliary patterns, when two sides are stepped, can further can avoid or reduce the incidence that coating is bad, and then improve volume production product yield.
It should be noted that, above-mentioned said front layer pattern, refers in chronological order, the pattern relatively descending one deck to be formed.
Further, described first auxiliary patterns 105 comprises Part I, Part II and Part III, the thickness of described Part I is higher than the thickness of described Part II or Part III, and described Part II and Part III lay respectively at the left and right sides of described Part I, on photoresist coating direction, the length of Part I is 0.2mm-0.5mm, and the length of Part II is 0.2mm-0.5mm, and the length of Part III is 0.2mm-0.5mm.
Optionally, described first auxiliary patterns 105 is apart from described first edge 20cm ~ 30cm.
Equally, described second auxiliary patterns 109 and the 3rd auxiliary patterns 103a are also apart from described first edge 20cm ~ 30cm.
Based on the method for making of above-mentioned various possible array base palte, described at least three layers of conductive film comprise: source and drain metallic film, grid metallic film, pixel electrode film.
Preferred further, describedly make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern to comprise in viewing area: make source and drain metallic film on the transparent substrate simultaneously, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form source-drain electrode pattern in viewing area simultaneously.
Like this, compare and form the first auxiliary patterns on other conductive layers, can exposure technology be reduced, so cost-saving.
Embodiments provide a kind of method for making of array base palte, on source and drain metal level at least three layers of conductive film except last layer film, by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, and form source-drain electrode pattern in viewing area simultaneously; Further can also on other conductive layers at least three layers of conductive film except last layer of conductive film and source and drain metal level, by patterning processes at least one first edge described, to be formed with the second auxiliary patterns of described first sides aligned parallel and described second auxiliary patterns is positioned under described first auxiliary patterns, and form conductive layer pattern in viewing area simultaneously; In addition can on semiconductor film layer, by patterning processes at least one first edge at described transparency carrier, to be formed with the 3rd auxiliary patterns of described first sides aligned parallel and described 3rd auxiliary patterns is positioned under described first auxiliary patterns, and be formed with active layer pattern in viewing area simultaneously; When the film in follow-up making is coated with photoresist to form this layer pattern, because described first edge and photoresist are coated with the vertical and effect of auxiliary patterns in direction, when auxiliary patterns is formed in the first edge of coating section start, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through auxiliary patterns, the pattern that section difference again in the viewing area of section start is high, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield; When auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
Further, describedly make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make at least four layers of resin film on the transparent substrate, and form display pattern respectively by patterning processes in viewing area; Described the first film for described in any layer at least four layers of resin film except last one deck resin film.
Further, described the first film is the resin film making formation at first.
Embodiment two, embodiments provides a kind of method for making of color membrane substrates, comprising: make at least four layers of resin film on the transparent substrate, and forms display pattern respectively by patterning processes in viewing area; Wherein, describedly make at least four layers of resin film on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, described the first film for described in any layer at least four layers of resin film except last one deck resin film; It is vertical that described first edge and photoresist are coated with direction, and described first auxiliary patterns is stepped along at least one side of the xsect in described photoresist coating direction, and described first auxiliary patterns and arbitrary photoresistance pattern are without being connected.
It should be noted that, resin film is one deck resin material applied on the transparent substrate; Described display pattern, the first auxiliary patterns are the pattern that described resin film is formed in this layer after patterning processes, and wherein display pattern can be such as black matrix pattern, red photoresistance pattern, green photoresistance pattern, blue light resistance pattern etc.When described color membrane substrates be one piece be used as the color membrane substrates of display panel time, described viewing area only refers to the viewing area of the color membrane substrates of one piece of display panel; When described color membrane substrates is a large substrate, it is when cutting can be divided into the color membrane substrates of multiple display panel, and described viewing area refers to the set of the viewing area on the color membrane substrates of each display panel.First edge refers to two limits being coated with the vertical described transparency carrier in direction with photoresist, and therefore, described first edge has at most two.
In addition, described first auxiliary patterns is the photoresistance pattern relatively formed in viewing area, and namely described first auxiliary patterns cuts little ice for the patterning forming display.
Embodiments provide a kind of method for making of color membrane substrates, in any layer at least four layers of resin film except last one deck resin film, by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, and form display pattern in viewing area simultaneously, when the film in follow-up making is coated with photoresist to form this layer pattern, due to described first edge and photoresist, to be coated with direction vertical, and described first auxiliary patterns is coated with the xsect in direction at least one side along described photoresist is stepped, when this first auxiliary patterns is formed in the first edge of coating section start, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through at least one side be stair-stepping first auxiliary patterns, the pattern that section difference again in the viewing area of section start is high, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield, when this first auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
Optionally, make the first resin film on the transparent substrate, and by two first edges of patterning processes at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel respectively.
It should be noted that, when two the first edges at described transparency carrier, when forming the first auxiliary patterns with described first sides aligned parallel respectively, these two first auxiliary patterns can identical also can not be identical, the xsect that only need meet along photoresist coating direction has at least a side to be stepped.
Further, described the first film is the resin film making formation at first.
Example, below in conjunction with the structure shown in Figure 16 to Figure 21, for a kind of method for making of color membrane substrates, its manufacturing process is as follows:
S301, as shown in figure 16, make the black matrix resin film of one deck on the transparent substrate 10, namely above-mentioned the first film, black matrix pattern 201 is formed in regulation region by patterning processes process, simultaneously at the first edge 10a (marking in figure 21) place of described transparency carrier 10, form the first auxiliary patterns 105 with described first sides aligned parallel.
Wherein, it is vertical that described first edge 10a and photoresist are coated with direction, and described first auxiliary patterns 105 is stepped along at least one side of the xsect in described photoresist coating direction, and described first auxiliary patterns 105 and any layer display with pattern without being connected.
In the accompanying drawing of this example, only show the first auxiliary patterns 105 being positioned at first edge, but the embodiment of the present invention is not limited to this.In addition, these two sides of sentencing the xsect of the firstth auxiliary patterns 105 of formation all have and to be steppedly described for example, but the present invention is not limited to this, can be to only have a side to have stepped.
S302, as shown in figs. 17-18, described black matrix 201 pattern makes one deck red resin film 202a, form red light picture group case 202 by patterning processes process in regulation region.
Owing to form black matrix pattern 201 in step S301 while, the first auxiliary patterns 105 with described first sides aligned parallel is being formed with the first 10a place, edge that photoresist is coated with the vertical transparency carrier in direction 10, and when described first auxiliary patterns 105 is positioned at photoresist coating original position, when making the coating photoresist 30 before forming red light picture group case 202 in step s 302, avoid or reduce the coating that the larger section of difference due to black matrix 201 pattern of lower floor of initial application place place cause bad.Wherein, herein along photoresist coating direction, described first auxiliary patterns 105 being designed to its xsect, to have at least one side be stair-stepping pattern, to be two sections of section differences by a section difference, thus when reducing next layer pattern of making, the coating that the nozzle of coating photoresist causes at the high figure of section difference through coating reference position is bad; When described first auxiliary patterns 105 is positioned at photoresist coating end position place, can avoid or reduce the coating caused due to photoresist resorption bad.
S303, as shown in figure 19, black matrix pattern 201, red light picture group case 202 make one deck green resin film, and form green light picture group case 204 by patterning processes process in regulation region.
With the effect of above-mentioned steps S302 first auxiliary patterns 105, when the photoresist form green light picture group case 204 in S303 before is coated with, the incidence that coating is bad can be avoid or reduced.
S304, as shown in figure 20, black matrix pattern 201, red light picture group case 202, green light picture group case 204 make blue layer resin film, and form blue light picture group case 205 by patterning processes process in regulation region.
With the effect of above-mentioned steps S303 first auxiliary patterns 105, when the photoresist form blue light picture group case 205 in S304 before is coated with, the incidence that coating is bad can be avoid or reduced.
After above-mentioned steps, be made into color membrane substrates as shown in figure 21.
It should be noted that, first, formerly form black matrix in embodiments of the present invention, then form red photoresistance pattern successively, second time forms green photoresistance pattern, to form blue light resistance pattern be that example is described to third layer, but the embodiment of the present invention is not limited to above-mentioned formation order; Secondly, other photoresistance patterns can also be formed, do not limit at this; Again, this sentences at the black matrix of formation simultaneously, form the first auxiliary patterns, but the embodiment of the present invention is not limited to this, can any layer at least four layers of resin film except last one deck resin film be formed.
Further, described first auxiliary patterns distance first edge 20cm ~ 30cm.
Preferably, the xsect of described first auxiliary patterns is symmetric shape.
Like this, in the photoresist coating process forming next layer pattern (such as green photoresistance pattern), because two sides of the first auxiliary patterns of front layer are stepped, when photoresist is coated with, the section difference of front layer pattern can be two height by this first auxiliary patterns, when two sides are stepped, can further can avoid or reduce the incidence that coating is bad, and then improve the product yield of volume production.
Further, described first auxiliary patterns comprises Part I, Part II and Part III, the thickness of described Part I is higher than the thickness of described Part II or Part III, and described Part II and Part III lay respectively at the left and right sides of described Part I, on photoresist coating direction, the length of Part I is 0.2mm-0.5mm, and the length of Part II is 0.2mm-0.5mm, and the length of Part III is 0.2mm-0.5mm.
Embodiments provide a kind of method for making of color membrane substrates, in any layer at least four layers of resin film except last one deck resin film, by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, and form black matrix pattern in viewing area simultaneously, when the film in follow-up making is coated with photoresist to form this layer pattern, due to described first edge and photoresist, to be coated with direction vertical, and described first auxiliary patterns is coated with the xsect in direction at least one side along described photoresist is stepped, when this first auxiliary patterns is formed in the first edge of coating section start, on the one hand, the coating that causes due to transparency carrier edge surface state difference can be avoided bad, on the other hand, during coating photoresist, first through at least one side be stair-stepping first auxiliary patterns, the pattern that section difference again in the viewing area of section start is high, can avoid or reduce the incidence that coating is bad, and then improve volume production product yield, when this first auxiliary patterns is formed in the first edge of coating end, can avoid or reduce the coating caused due to photoresist resorption bad.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (13)
1. a method for making for substrate, comprising: make at least double-layer films on the transparent substrate, and forms display pattern respectively by patterning processes in viewing area; It is characterized in that, make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes:
Make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein,
Described the first film for described in any layer at least in double-layer films except last layer film; It is vertical that described first edge and photoresist are coated with direction, and described first auxiliary patterns is stepped along at least one side of the xsect in described photoresist coating direction.
2. method according to claim 1, it is characterized in that, describedly make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make at least three layers of conductive film on the transparent substrate, and form display pattern respectively by patterning processes in viewing area;
Described the first film for described in any layer at least three layers of conductive film except last layer of conductive film.
3. the method as requested described in 2, is characterized in that, describedly makes at least double-layer films on the transparent substrate, and forms display pattern respectively by patterning processes in viewing area and also comprise:
Make the second film on the transparent substrate, and by patterning processes at least one first edge described, form the second auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein,
Described second film for described in any layer conductive film at least in double-layer films except last layer of conductive film and described the first film; The rectangular shape of described second auxiliary patterns xsect.
4. method according to claim 3, is characterized in that, described first auxiliary patterns is positioned on described second auxiliary patterns.
5. method according to claim 2, is characterized in that, describedly makes at least double-layer films on the transparent substrate, and forms display pattern respectively by patterning processes in viewing area and also comprise:
Make semiconductive thin film on the transparent substrate, and by patterning processes at least one first edge described, form the 3rd auxiliary patterns with described first sides aligned parallel, form display pattern in viewing area simultaneously; Wherein, the rectangular shape of described 3rd auxiliary patterns xsect, and described 3rd auxiliary patterns is positioned under described first auxiliary patterns.
6. method according to claim 2, is characterized in that, described at least three layers of conductive film comprise: source and drain metallic film, grid metallic film, pixel electrode film.
7. method according to claim 6, it is characterized in that, describedly make the first film on the transparent substrate, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form display pattern simultaneously in viewing area and comprise:
The described source and drain of making on the transparent substrate metallic film, and by patterning processes at least one first edge at described transparency carrier, form the first auxiliary patterns with described first sides aligned parallel, form source-drain electrode pattern in viewing area simultaneously.
8. method according to claim 1, it is characterized in that, describedly make at least double-layer films on the transparent substrate, and comprise at viewing area formation display pattern respectively by patterning processes: make at least four layers of resin film on the transparent substrate, and form display pattern respectively by patterning processes in viewing area;
Described the first film for described in any layer at least four layers of resin film except last one deck resin film.
9. method according to claim 8, is characterized in that, described the first film is the resin film making formation at first.
10. the method according to any one of claim 1 to 9, is characterized in that, at least one first edge described is two the first edges.
11. methods according to any one of claim 1 to 9, it is characterized in that, the xsect of described first auxiliary patterns is symmetric shape.
12. methods according to claim 11, it is characterized in that, described first auxiliary patterns comprises Part I, Part II and Part III, the thickness of described Part I is higher than the thickness of described Part II or Part III, and described Part II and Part III lay respectively at the left and right sides of described Part I, on photoresist coating direction, the length of Part I is 0.2mm-0.5mm, the length of Part II is 0.2mm-0.5mm, and the length of Part III is 0.2mm-0.5mm.
13. methods according to any one of claim 1 to 9, it is characterized in that, described first auxiliary patterns is apart from described first edge 20cm ~ 30cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210540524.0A CN103034061B (en) | 2012-12-13 | 2012-12-13 | A kind of method for making of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210540524.0A CN103034061B (en) | 2012-12-13 | 2012-12-13 | A kind of method for making of substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103034061A CN103034061A (en) | 2013-04-10 |
| CN103034061B true CN103034061B (en) | 2016-04-27 |
Family
ID=48021075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210540524.0A Expired - Fee Related CN103034061B (en) | 2012-12-13 | 2012-12-13 | A kind of method for making of substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103034061B (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4980644B2 (en) * | 2005-05-30 | 2012-07-18 | 東京エレクトロン株式会社 | Coating method and coating apparatus |
| CN102768989A (en) * | 2011-05-06 | 2012-11-07 | 京东方科技集团股份有限公司 | Thin film transistor array substrate structure and manufacturing method |
-
2012
- 2012-12-13 CN CN201210540524.0A patent/CN103034061B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN103034061A (en) | 2013-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100576550C (en) | Thin-film transistor array base-plate and manufacture method thereof | |
| CN103309108B (en) | Array base palte and manufacture method, display device | |
| US9502447B2 (en) | Array substrate and manufacturing method thereof, display device | |
| CN103560110B (en) | A kind of array base palte and preparation method thereof, display unit | |
| CN103489876B (en) | A kind of array base palte and preparation method thereof, display device | |
| US20140211118A1 (en) | Tft array substrate and manufacturing method thereof and liquid crystal display device | |
| CN103178021B (en) | Oxide thin-film transistor array substrate, manufacturing method for same and display panel | |
| CN104134671A (en) | Thin film transistor array substrate and manufacturing method thereof | |
| CN104201152A (en) | Method for manufacturing display panel | |
| CN101609236A (en) | Method for manufacturing thin film transistor array substrate | |
| US20180158953A1 (en) | Array substrate and method for manufacturing the same | |
| CN202473925U (en) | Top gate type TFT (Thin Film Transistor) array substrate and display device | |
| CN102736325A (en) | Pixel structure and manufacturing method and display device of same | |
| CN102945846A (en) | Array substrate, manufacturing method thereof and display device | |
| CN104157608B (en) | Manufacture method for and structure of the TFT substrate | |
| CN102931138B (en) | Array substrate and manufacturing method thereof and display device | |
| CN104638016A (en) | Thin film transistor and manufacturing method of thin film transistor, array substrate and manufacturing method of array substrate, and display device | |
| CN103560114A (en) | TFT array substrate, manufacturing method thereof and display device | |
| CN101692439B (en) | Manufacturing method for a plurality of groups of substrates of thin-film transistor | |
| CN103489874A (en) | Array substrate, manufacturing method thereof and display device | |
| CN102610564A (en) | Method for manufacturing TFT array substrate | |
| CN102637631B (en) | Manufacturing method of TFT (thin film transistor)-LCD (liquid crystal display) array substrate | |
| CN106129071A (en) | The manufacture method of a kind of array base palte and related device | |
| CN103117284A (en) | Array substrate and manufacturing method thereof and display device | |
| CN105047675A (en) | Thin film transistor and manufacture method thereof, array substrate and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160427 Termination date: 20201213 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |