CN103022270A

CN103022270A - Technology for manufactured SiOx film to improve tunneling effect of stacked solar film

Info

Publication number: CN103022270A
Application number: CN2011102881768A
Authority: CN
Inventors: 戴嘉男; 刘幼海; 刘吉人
Original assignee: Jifu New Energy Technology Shanghai Co Ltd
Current assignee: Jifu New Energy Technology Shanghai Co Ltd
Priority date: 2011-09-26
Filing date: 2011-09-26
Publication date: 2013-04-03

Abstract

The invention mainly aims at a technology for manufacturing a SiOx film to improve a tunneling effect of a stacked solar film, and the technology is mainly performed in a PECVD (Plasma Enhanced Chemical Vapor Deposition) cavity. The manufacturing process comprises the following steps of: firstly, manufacturing amorphous silicon P-type, I-type and N-type semiconductor films through the PECVD cavity; secondly, by adjusting parameters such as temperature (controlled within about 200 DEG C) in the cavity, pressure (low pressure) of the manufacturing process, gas flow, distance between an electrode and glass, and RF power (low Power), manufacturing a first layer P-type amorphous semiconductor, a second layer I-type amorphous semiconductor, and a third layer N-type amorphous semiconductor; and thirdly, after a thin layer N-type amorphous conductor is coated, taking out a test piece so as to be contacted with air, and instantly forming a thin SiO2 layer or SiOx layer after Si is contacted with the air. The thin film has an amorphous structure, so that the internal defects of the thin film are serious; in addition, the film is made from a thin SiOx material, and the penetration rate is high, so that the film just can be used for the tunneling effect; the manufacturing process further comprises the following steps of: after the test piece is contacted with the air for 10 minutes, instantly pumping vacuum on glass again and manufacturing a P-type amorphous semiconductor, an I-type amorphous semiconductor and N-type an amorphous semiconductor so as to obtain a film solar core; and coating a back electrode so as to generate electricity. Due to the formation of the SiOx material, a built-in electric field between N/P in a Tandem solar cell can be removed, so that hole electron can smoothly flow, and the efficiency of a solar film cell can be improved.

Description

Make the SiOx rete to improve stacking solar energy film tunneling effect

Technical field

This method is the biography chip technology with the technological core PECVD in the thin film solar, to belong to the important technology of making amorphous silicon and microcrystal silicon, it can make P.I.N type semiconductive thin film and can be according to the pressure of inside cavity in the PECVD cavity, temperature, the parameters such as gas flow, produce amorphous silicon and microcrystal silicon, the technology of this invention then is to be that emphatically the tunneling effect tunnel junction that amorphous silicon and microcrystal silicon run into when stacking does an improvement, it is normal to allow electronics electricity hole transmit, and allows electric current can spread out of smoothly to improve Voc and Jsc and the FF value of whole solar energy thin layer.

Background technology

At present, industry is for existing many research in the thin-film solar cells, the technology of wherein making crucial solar energy film then has PECVD, HWCVD, LPCVD etc. are multiple, at present technology is comparatively skillful and what be applied to volume production then is as main take PECVD, the solar energy rete of being made by PECVD then is comparatively in the majority mainly with the rete of amorphous silicon and microcrystal silicon, in the PECVD inside cavity then by adjusting total gas flow rate, RF power, processing procedure pressure, the conditions such as electrode and glass spacing and temperature go to make, and the amorphous silicon P.I.N type semiconductor of making its mainly be the part that absorbs its visible light on spectrum, the spectrum from 300 ~ 850nm approximately, and PECVD also can make the P.I.N type semiconductor of microcrystal silicon, its mainly can produce crystallite mutually outside, also can absorb the spectrum that 500 ~ 1100nm is infrared light, so industry and academia wish these two kinds of technology are combined without differing, producing amorphous silicon and microcrystal silicon coexists and can absorb the technology of visible light and infrared light, so produce Tandem solar cell, but to and be not easy amorphous silicon and microcrystal silicon combination, mainly be because the P type semiconductor of the N type semiconductor of amorphous silicon and microcrystal silicon can produce internal electric field in combination between the two, this internal electric field can destroy the flow direction in electronics and electric hole, so invention will be dwindled the internal electric field coverage exactly, so produce the recombination that one deck thin layer is done electronics electricity hole, the rete of producing defect improves by recombination rate, can dwindle internal electric field, and allow in original ground floor amorphous silicon P type amorphous semiconductor electric hole and the N-type amorphous semiconductor electronics out in the second layer microcrystal silicon out can normally wear the tunnel circulation, so can improve solar film battery efficient.

Summary of the invention

Main purpose of the present invention is to make the SiOx rete to improve stacking solar energy film tunneling effect.It mainly is to carry out processing procedure in the PECVD cavity, make amorphous silicon P.I.N type semiconductive thin film by the PECVD cavity first, by the temperature (controlling about 200C) of adjusting cavity, processing procedure pressure (low pressure), gas flow, electrode and glasses interval, and the parameter such as RF power (low Power), be made into ground floor P type amorphous semiconductor, second layer I type amorphous semiconductor, three layers of the 3rd layer of N-type crystallite semiconductors, the present invention with that, after thin layer N-type crystallite semiconductor plated film is finished, the test piece taking-up is made its ingress of air, behind its Si and contact with air, immediately can the lamellar SiO2 of shape, or SiOx, this film is originally as non crystalline structure, so internal defects is serious, add because be thin SiOx material, its penetrance is higher, just can be used as tunneling effect uses, so at the test piece ingress of air after 10 minutes, then immediately glass is again vacuumized and carries out the N type semiconductor of P type crystallite semiconductor and I type crystallite semiconductor and amorphous, then finish this thin film solar core, the plated film back electrode can produce generating subsequently, and the formation of this SiOx material can be removed the internal electric field between the N/P among the Tandem solar cell, can allow electronics electricity hole flow smoothly, so can improve solar film battery efficient.

Embodiment

Hereby the present invention is cooperated accompanying drawing, shown in being described in detail as follows: see also the 1st figure, for the present invention makes the SiOx rete to improve the PECVD body schematic diagram of stacking solar energy film tunneling effect, by among the figure as can be known, when TCO glass 2 is put the PECVD inside cavity by roller 1 biography, can be pumped to base pressure by Pump 4, then gas flow into showerhead 7 and is diffused in the cavity from airflow hole 8, subsequently by butterfly valve 5 control processing procedure pressure, and RF power 9 opens the electricity slurry and carries out processing procedure, Slit valve 6 can send out glass after finishing, and be exactly to make P type amorphous in this PECVD cavity, I type amorphous, the N-type crystallite, form the amorphous phase of SiOx with relief test piece ingress of air, P type crystallite, I type crystallite, the N-type amorphous is namely finished this processing procedure after finishing.

See also the 2nd figure, this makes the SiOx rete to improve stacking solar energy film tunneling effect for the present invention, at first make P type amorphous semiconductor by the coarse TCO of face, make subsequently I type amorphous semiconductor and N-type crystallite semiconductor, the glass vacuum breaker that this plated film is complete is to atmosphere subsequently, make its test piece and contact with air, form the SiO2 or SiOx of amorphous phase, this rete so its defect is higher, can promote recombination rate speed owing to be amorphous phase, and can allow internal electric field dwindle, and penetrance is higher, so invention can improve tunneling effect, then finishes this processing procedure after having made subsequently I type crystallite and N-type amorphous and metal electrode, it inserts the amorphous SiOx of thin film, can improve tunneling effect, can promote by this Jsc of solar energy, promote solar battery efficiency.

More than explanation, just illustrative for the purpose of the present invention, nonrestrictive, those of ordinary skills understand, in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention, the below is that the present invention is further described in conjunction with the accompanying drawings and embodiments: the 1st figure is the present invention's PECVD processing procedure mode schematic diagram; The 2nd figure is the present invention's processing procedure rete schematic diagram; Primary clustering symbol description: 1 ... live roller 2 ... TCO glass 3 ... location Sensor4 ... Pump5 bleeds ... butterfly valve 6 ... Slit valve7 ... Showerhead8 ... airflow hole 9 ... RF power supply.

Claims

1. main purpose of the present invention is to make the SiOx rete to improve stacking solar energy film tunneling effect, it mainly is to carry out processing procedure in the PECVD cavity, make amorphous silicon P.I.N type semiconductive thin film by the PECVD cavity first, by the temperature (controlling about 200C) of adjusting cavity, processing procedure pressure (low pressure), gas flow, electrode and glasses interval, and the parameter such as RF power (low Power), be made into ground floor P type amorphous semiconductor, second layer I type amorphous semiconductor, three layers of the 3rd layer of N-type crystallite semiconductors, the present invention with that, after thin layer N-type crystallite semiconductor plated film is finished, the test piece taking-up is made its ingress of air, behind its Si and contact with air, immediately can the lamellar SiO2 of shape, or SiOx, this film is originally as non crystalline structure, so internal defects is serious, add because be thin SiOx material, its penetrance is higher, just can be used as tunneling effect uses, so at the test piece ingress of air after 10 minutes, then immediately glass is again vacuumized and carries out the N type semiconductor of P type crystallite semiconductor and I type crystallite semiconductor and amorphous, then finish this thin film solar core, the plated film back electrode can produce generating subsequently, and the formation of this SiOx material can be removed the internal electric field between the N/P among the Tandem solar cell, can allow electronics electricity hole flow smoothly, so can improve solar film battery efficient.

2. a kind of making SiOx rete according to claim 1 is to improve stacking solar energy film tunneling effect, wherein the butterfly valve in cavity can be controlled gas processing procedure pressure, when gas pressure need to be controlled high pressure, its butterfly valve can dwindle aperture, gas can be full of reach high pressure in the cavity in order to can carry out processing procedure.

3. a kind of making SiOx rete according to claim 1 is to improve stacking solar energy film tunneling effect, its Showerhead is divided into three layers of design, ground floor and the second layer are straight shape, but it is staggered designs, and the 3rd layer be funnel-form, gas uniform can be diffused on the TCO glass surface, and open the electricity slurry by RF power and carry out processing procedure.

4. making SiOx rete according to claim 1 is to improve stacking solar energy film tunneling effect, its between ground floor top amorphous silicon and second layer bottom microcrystal silicon first with the glass vacuum breaker, can touch air, and formation SiOx, because it is amorphous phase, its defect is larger, can allow carrier carry out recombination, and because defect is arranged, so recombination rate is higher, and can cause the internal electric field of N/P to dwindle, the rete of its SiOx is thinner in addition, penetrance is higher, can allow by this between top cell and the bottom cell tunneling effect improve.

5. making SiOx rete according to claim 1 is to improve stacking solar energy film tunneling effect, it is behind the complete N-type crystallite semiconductor of plated film, vacuum breaker makes its ingress of air, need in 10min, again cavity be vacuumized, if because be exposed to overlong time under the air body, can cause the rete thickening of SiOx, and its penetrance variation, and resistance also can improve, affecting electronics electricity hole can't circulate, so its vacuum breaker time needs to finish in 10min, allows by this light can enter into smoothly microcrystal silicon inside, improve Jsc, to improve the efficient of solar film battery.