CN103022271A

CN103022271A - NP interface for manufacturing P-type tunneling layer to improve double-layer stacked solar energy

Info

Publication number: CN103022271A
Application number: CN2011102938234A
Authority: CN
Inventors: 戴嘉男; 刘幼海; 刘吉人
Original assignee: Jifu New Energy Technology Shanghai Co Ltd
Current assignee: Jifu New Energy Technology Shanghai Co Ltd
Priority date: 2011-09-28
Filing date: 2011-09-28
Publication date: 2013-04-03

Abstract

The invention discloses an NP interface for manufacturing a P-type tunneling layer to improve double-layer stacked solar energy. N-type, I-type and P-type microcrystal silicon films are manufactured by putting glass coated with back electrodes into a PECVD (Plasma Enhanced Chemical Vapor Deposition) cavity, so that parameters are adjusted, N-type, I-type and P-type microcrystal layers in a Bottom cell are manufactured; and a P-type non-crystal is coated by doping TMB (tetramethylbenzidine) after the P-type microcrystal is coated; the manufactured P-type non-crystal has high electric conductivity and large defect density, and can be applied to a tunneling effect; at the same time, as the layers are manufactured inside the PECVD chamber, an N-type non-crystal, an I-type non-crystal and a P-type microcrystal of a top cell are carried out later; the P-type microcrystal is used for manufacturing a wide Band gap so that more light energy can penetrate into an I-type microcrystal through light incidence; and then, sputter is used for manufacturing front electrodes, namely a film solar cell is obtained.

Description

Make P type tunneling layer to improve the NP interface of double stacked solar energy

Technical field

This method is the biography chip technology with the technological core PECVD in the thin film solar, it is to make in the PECVD cavity, utilize first the glass that had plated back electrode to carry out crystallite and the amorphous semiconductor films of N.I.P, and with the pressure according to inside cavity, temperature, the parameters such as gas flow are made, the technology of this invention then is to be that emphatically the tunneling effect tunnel junction that microcrystal silicon and amorphous silicon run into when stacking does one deck recombination layer improvement, it is normal to allow electronics electricity hole transmit, and allows electric current can spread out of smoothly to improve Voc and Jsc and the FF value of whole solar energy thin layer.

Background technology

Industry is for existing many research in the thin-film solar cells, the technology of wherein making crucial solar energy film then has PECVD, HWCVD, LPCVD etc. are multiple, at present technology is comparatively skillful and what be applied to volume production then is as main take PECVD, the solar energy rete of being made by PECVD then is comparatively in the majority mainly with the rete of amorphous silicon and microcrystal silicon, and this amorphous silicon and microcrystal silicon rete can be divided into two kinds of processing procedure modes, be two kinds of the Substrate of the Superstrate of P.I.N and N.I.P, especially can be different because of the rete self character in the N.I.P processing procedure, can go out high Band gap layer at N.P interface processing procedure, can allow the smooth transition of electronics and generation current, these two kinds of making mainly then are different in process sequence, all the other all are to adjust gas flow in the PECVD inside cavity, RF power, processing procedure pressure, the conditions such as electrode and glass spacing and temperature go to make, and the N.I.P type semiconductor of making microcrystal silicon, can absorb the spectrum that 500 ~ 1100nm is infrared light, the amorphous silicon N.I.P type semiconductor of making then is the part that absorbs its visible light, the spectrum from 300 ~ 850nm approximately, utilize microcrystal silicon and amorphous silicon to coexist and to absorb infrared light and visible light technology, so produce Tandem solar cell, but in manufacturing process, the P type semiconductor of microcrystal silicon and the N type semiconductor of amorphous silicon can produce internal electric field in combination between the two, this internal electric field can destroy the flow direction in electronics and electric hole, so invention will be dwindled the internal electric field coverage exactly, so produce the recombination that one deck thin layer is done electronics electricity hole, the rete of producing defect improves by recombination rate, can dwindle internal electric field, and allow among original bottom cell microcrystal silicon p-type crystallite semiconductor electric hole and the N-type amorphous semiconductor electronics out in the top cell amorphous silicon out can normally wear the tunnel circulation, improve by this solar energy film generating efficiency.

Summary of the invention

Main purpose of the present invention is to make P type tunneling layer to improve the NP interface of double stacked solar energy.Mainly in the PECVD cavity, carry out processing procedure, the glass of the complete back electrode of plated film is put into the PECVD cavity first, make microcrystal silicon N.I.P type semiconductive thin film, by the temperature of adjusting cavity, processing procedure pressure, gas flow, electrode and glasses interval, and the parameter such as RF power, make N-type crystallite semiconductor among the Bottom cell, I type crystallite semiconductor, three layers of P type crystallite semiconductors, the present invention with that, after P type crystallite semiconductor plated film is finished, utilize the thickness that mixes of TMB/SiH4 to remove to carry out P type amorphous semiconductor plated film, main purpose of making P type amorphous semiconductor is because of its electrical conductivity height, and defect density is large, so internal defects is serious, therefore can use as tunneling effect, and because this rete is to make in the PECVD cavity, so do not have allow the glass vacuum breaker produce the SiO2 oxide layer (because of its vacuum breaker oxidated layer thickness wayward, can cause thickness too thick, resistance value improve and penetrability poor and affect tunneling effect), carry out again the N-type amorphous semiconductor of top cell after finishing, I type amorphous semiconductor and P type crystallite semiconductor, this part is mainly made wide Band gap with P type crystallite semiconductor, allow light incident the time after can allow more light can penetrate in the I type semiconductor, electrode before utilizing sputter to make after finishing, namely finish thin-film solar cells, and remove the internal electric field that produces at Bottom cell P type crystallite and Top cell N-type amorphous by P type amorphous semiconductor, increase recombination rate, can allow electronic electric flow smoothly, and improve double stacked solar energy film generating efficiency.

Execution mode

Hereby the present invention is cooperated accompanying drawing, shown in being described in detail as follows: see also Fig. 1, for the present invention makes P type tunneling layer with the PECVD schematic diagram of the NP interface that improves double stacked solar energy, among the figure as can be known, when the glass 2 that has plated back electrode Ag and AZO passes to PECVD inside via roller 1, Pump 4 is evacuated to base pressure, gas SiH4 subsequently, H2, TMB, PH3 can be according to the N-type that will plate, the I type, the P type semiconductor film is done the allotment of gas, and flow into Showerhead 7 and be diffused in the cavity by airflow hole 8, butterfly valve 5 is controlled the processing procedure pressure and is opened the electricity slurry by RF power supply 9 and carry out processing procedure subsequently, by Slit valve 6 glass is spread out of after finishing, this processing procedure then comprises the crystallite semiconductor of bottom cell, the P type amorphous semiconductor recombination layer of this invention and the amorphous semiconductor of top cell are namely finished the PECVD plated film when finishing these retes.

See also Fig. 2; this makes P type tunneling layer with the plated film schematic diagram of the NP interface that improves double stacked solar energy for the present invention; at first be that glass is made back electrode Ag and AZO layer by Sputter first; PECVD plates the N-type crystallite semiconductor of Bottom cell subsequently; I type crystallite semiconductor; P type crystallite semiconductor; then be P type amorphous semiconductor of the present invention subsequently; plate again the N-type amorphous semiconductor of Top cell after finishing; I type amorphous semiconductor and last P type crystallite semiconductor; the Recombination layer of this P type amorphous semiconductor is because be amorphous phase; penetrance height and electrical conductivity height and the high characteristic of defect density; can increase the recombination rate of crystallite P and amorphous N; allow internal electric field dwindles between the N/P; so can improve tunneling effect; plate front electrode ITO by Sputter again after finishing processing procedure; namely finish device; can utilize subsequently successive process to make the film forming group; and can promote by P type amorphous semiconductor the Jsc of solar energy; Voc and FF; promote solar energy double stacked rete generating efficiency; more than explanation; just illustrative for the purpose of the present invention; nonrestrictive; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits; can make many corrections; change or equivalence, but all will fall within protection scope of the present invention.

Description of drawings

The below is that the present invention is further described in conjunction with the accompanying drawings and embodiments: Fig. 1 is the present invention's PECVD processing procedure P type noncrystal membrane board schematic diagram; Fig. 2 is the film stack sequential schematic that the present invention's double stacked solar energy is made; The main element of PECVD processing procedure P type noncrystal membrane board explanation in the present invention, main element symbol description: 1 ... live roller, 2 ... TCO glass, 3 ... location Sensor, 4 ... the Pump that bleeds, 5 ... butterfly valve 6 ... Slit valve, 7 ... Showerhead, 8 ... airflow hole.

Claims

1. main purpose of the present invention is to make P type tunneling layer to improve the N.P interface of double stacked solar energy, mainly in the PECVD cavity, carry out processing procedure, the glass of the complete back electrode of plated film is put into the PECVD cavity first, make microcrystal silicon N.I.P type semiconductive thin film, by the temperature of adjusting cavity, processing procedure pressure, gas flow, electrode and glasses interval, and the parameter such as RF power, make N-type crystallite semiconductor among the Bottom cell, I type crystallite semiconductor, three layers of P type crystallite semiconductors, the present invention with that, after P type crystallite semiconductor plated film is finished, utilize the thickness that mixes of TMB/SiH4 to remove to carry out P type amorphous semiconductor plated film, main purpose of making P type amorphous semiconductor is because of its electrical conductivity height, and defect density is large, so internal defects is serious, therefore can use as tunneling effect, and because this rete is to make in the PECVD cavity, so do not have allow the glass vacuum breaker produce the SiO2 oxide layer (because of its vacuum breaker oxidated layer thickness wayward, can cause thickness too thick, resistance value improve and penetrability poor and affect tunneling effect), carry out again the N-type amorphous semiconductor of top cell after finishing, I type amorphous semiconductor and P type crystallite semiconductor, this part is mainly made wide Band gap with P type crystallite semiconductor, allow light incident the time after can allow more light can penetrate in the I type semiconductor, electrode before utilizing sputter to make after finishing, namely finish thin-film solar cells, and remove the internal electric field that produces at Bottom cell P type crystallite and Top cell N-type amorphous by P type amorphous semiconductor, increase recombination rate, can allow electronic electric flow smoothly, and improve double stacked solar energy film generating efficiency.

2. a kind of making P type tunneling layer according to claim 1 is to improve the N.P interface of double stacked solar energy, butterfly valve in its cavity can be controlled gas processing procedure pressure, when gas pressure control high pressure or low pressure, its butterfly valve can dwindle aperture or amplify, and gas can be full of reach high pressure in the cavity in order to can carry out processing procedure.

3. a kind of making P type tunneling layer according to claim 1 is to improve the N.P interface of double stacked solar energy, Showerhead is divided into three layers of design, ground floor and the second layer are straight shape, but be staggered designs, and the 3rd layer be funnel-form, gas uniform can be diffused on the glass surface that has plated back electrode, and open the electricity slurry by RF power and carry out processing procedure.

4. making P type tunneling layer according to claim 1 is to improve the N.P interface of double stacked solar energy, can plate the thin recombination layer of one deck between its Bottom cell microcrystal silicon and the Top cell amorphous silicon, it is P type amorphous semiconductor, mainly utilize the defect of its amorphous phase more serious, and has high electrical conductivity, can allow carrier carry out recombination, and because of defect density obvious, so recombination rate is higher, and can cause the internal electric field of N/P to dwindle, improve by this tunneling effect between bottom cell and the top cell.

5. making P type tunneling layer according to claim 1 is to improve the N.P interface of double stacked solar energy, its Bottom cell and recombination layer and Top cell finish in the PECVD cavity, so can not allow glass and contact with air form the SiO2 phase, its SiO2 phase also its defect density of membership is obviously improved tunnel junction, but its thickness is wayward, if too thick meeting causes the Jsc electric current to flow out smoothly, so the amount that can utilize TMB/SiH4 to mix is made P type amorphous semiconductor and is used as recombination layer, it just can utilize high electrical conductivity, high penetration, the characteristics such as defect density is serious, allow recombination between the N/P interface reduce and can allow the fairing profit mobile between bottom and top cell, improve Jsc, Voc and FF improve the solar energy film generating efficiency.