CN103022230A - Technology for improving penetration rate of transparent conducting layer by utilizing buffer layer technology - Google Patents

Technology for improving penetration rate of transparent conducting layer by utilizing buffer layer technology Download PDF

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Publication number
CN103022230A
CN103022230A CN2011102836495A CN201110283649A CN103022230A CN 103022230 A CN103022230 A CN 103022230A CN 2011102836495 A CN2011102836495 A CN 2011102836495A CN 201110283649 A CN201110283649 A CN 201110283649A CN 103022230 A CN103022230 A CN 103022230A
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CN
China
Prior art keywords
technology
conducting layer
layer
transparency conducting
resilient coating
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Pending
Application number
CN2011102836495A
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Chinese (zh)
Inventor
简唯伦
刘幼海
刘吉人
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Jifu New Energy Technology Shanghai Co Ltd
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Jifu New Energy Technology Shanghai Co Ltd
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Application filed by Jifu New Energy Technology Shanghai Co Ltd filed Critical Jifu New Energy Technology Shanghai Co Ltd
Priority to CN2011102836495A priority Critical patent/CN103022230A/en
Publication of CN103022230A publication Critical patent/CN103022230A/en
Pending legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention mainly discloses a technology for improving the penetration rate of a transparent conducting layer by utilizing a buffer layer technology. A buffer layer is additionally arranged between glass and the transparent conducting layer, a light refraction mode is adjusted so as to increase the light penetration rate, and the generating efficiency of a solar battery is improved; a glass substrate is firstly plated a layer of hyaline membrane material, which has the refractive index n more than 1.5 or less than 2.0 and serves as a buffer layer is plated on a glass substrate before a transparent conducting film layer is plated, so that the refraction ratio difference between the glass substrate and the transparent conducting layer is reduced; and the probability of light penetration is increased, and an effective light source of a solar battery is improved.

Description

Utilize the resilient coating technology to improve the technology of transparency conducting layer penetrance
Technical field
The present invention is a kind of probability that can greatly promote light incident transparent conductive body, reduce the reflection of light rate, improve solar energy efficient, its main purpose: the technology that adopts resilient coating, improve the phenomenon that light reflects when entering transparency conducting layer, improve the probability that light enters glass, to increase solar cell power generation efficient.
Background technology
At present, world's solar energy produces the employed photic zone glass of line, if need to be than high penetration glass, cost is quite high, to such an extent as to each manufacturer all gives up its mist degree (Haze), change by the efficient of battery own and do improvement, but it improves to some extent restriction, if can effectively promote light transmittance, just can greatly promote whole efficiency.
Summary of the invention
The present invention utilizes the resilient coating technology to improve the technology of transparency conducting layer penetrance, and to add resilient coating between glass and transparency conducting layer, adjusting its optical index mode increases light transmittance, promotes solar cell power generation efficient.Before being coated with the transparent conductive film layer, first be coated with the transparent thin-film material of one deck refractive index between 1.5<n<2.0 at glass substrate and be used as resilient coating, reduce the refractive index difference between glass substrate and the transparency conducting layer, increase the probability that light penetrates, to promote the solar cell efficient light sources.
Specific implementation method:I is with the present invention's accompanying drawing of arranging in pairs or groups, be described in detail as follows: Fig. 1 is that the present invention utilizes the resilient coating technology to improve the technology schematic diagram of transparency conducting layer penetrance, by learning among the figure, be coated with the transparent thin-film material of one deck refractive index between 1.5<n<2.0 at a glass substrate (1) and be used as resilient coating (2), on this resilient coating, namely finish to be coated with layer of transparent conductive membrane layer (3) more afterwards.
Fig. 2 is each layer of the present invention refractive index schematic diagram and reflectivity penetrance formula table, and its refractive index of glass substrate (1) roughly is about n ~ 1.5, and we select the transparent thin-film material of 1.5<n<2.0 to be used as resilient coating (2); All be about n ~ 2.0 to be coated with layer of transparent conductive membrane layer (3) refractive index again on the resilient coating.Learnt by formula (4), if use resilient coating to be sandwiched in glass and electrically conducting transparent interlayer, reduce refractive index difference, can reduce the reflection of light rate, so the present invention selects the transparent membrane of 1.5<n<2.0 to work as resilient coating, can effectively increase the utilance of incident light, promote solar energy industry and advance to strive ability.
More than explanation is just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention.
Description of drawings: following for the present invention is further described by reference to the accompanying drawings.
Fig. 1 is the schematic diagram that the present invention utilizes each thin layer of technology of resilient coating technology raising transparency conducting layer penetrance to be coated with.
Fig. 2 is each layer of the present invention refractive index schematic diagram and reflectivity penetrance formula table.
The main symbol description of icon:1 ... glass 2 ... resilient coating 3 ... transparent conductivity layer 4 ... reflectivity penetrance formula table.

Claims (3)

1. the present invention utilizes the resilient coating technology to improve the technology of transparency conducting layer penetrance, and to add resilient coating between glass and transparency conducting layer, adjusting its optical index mode increases light transmittance, promotes solar cell power generation efficient; Before being coated with the transparent conductive film layer, transparent thin-film material is used as resilient coating, reduces the refractive index difference between glass substrate and the transparency conducting layer, increases the probability that light penetrates, to promote the solar cell efficient light sources.
2. a kind of technology of utilizing the resilient coating technology to improve the transparency conducting layer penetrance according to claim 1, it selects film is the transparent thin-film material of refractive index between glass substrate and transparency conducting layer.
3. a kind of technology of utilizing the resilient coating technology to improve the transparency conducting layer penetrance according to claim 1, transparency conducting layer wherein can be selected the film of various materials, only need reach the green high penetration material of high conduction and get final product.
CN2011102836495A 2011-09-22 2011-09-22 Technology for improving penetration rate of transparent conducting layer by utilizing buffer layer technology Pending CN103022230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011102836495A CN103022230A (en) 2011-09-22 2011-09-22 Technology for improving penetration rate of transparent conducting layer by utilizing buffer layer technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011102836495A CN103022230A (en) 2011-09-22 2011-09-22 Technology for improving penetration rate of transparent conducting layer by utilizing buffer layer technology

Publications (1)

Publication Number Publication Date
CN103022230A true CN103022230A (en) 2013-04-03

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Family Applications (1)

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CN2011102836495A Pending CN103022230A (en) 2011-09-22 2011-09-22 Technology for improving penetration rate of transparent conducting layer by utilizing buffer layer technology

Country Status (1)

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CN (1) CN103022230A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105892731A (en) * 2014-10-29 2016-08-24 祥达光学(厦门)有限公司 Touch screen
CN109491545A (en) * 2018-12-19 2019-03-19 武汉华星光电半导体显示技术有限公司 Touch panel unit and electronic equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030179343A1 (en) * 2000-01-26 2003-09-25 Marechal Nadine Genevieve Anti-static, anti reflection coating
CN101246916A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Method for reducing internal reflection of silicon hydride thin film photovoltaic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030179343A1 (en) * 2000-01-26 2003-09-25 Marechal Nadine Genevieve Anti-static, anti reflection coating
CN101246916A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Method for reducing internal reflection of silicon hydride thin film photovoltaic device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105892731A (en) * 2014-10-29 2016-08-24 祥达光学(厦门)有限公司 Touch screen
CN105892731B (en) * 2014-10-29 2019-05-28 祥达光学(厦门)有限公司 Touch Screen
CN109491545A (en) * 2018-12-19 2019-03-19 武汉华星光电半导体显示技术有限公司 Touch panel unit and electronic equipment
CN109491545B (en) * 2018-12-19 2020-12-04 武汉华星光电半导体显示技术有限公司 Touch screen assembly and electronic equipment
US10996799B2 (en) 2018-12-19 2021-05-04 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Touch screen assembly and electronic device with improved light transmittance

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Application publication date: 20130403