CN103022224A - High-efficiency dual-junction thin-film solar cell technology capable of improving tunneling effect - Google Patents
High-efficiency dual-junction thin-film solar cell technology capable of improving tunneling effect Download PDFInfo
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- CN103022224A CN103022224A CN2011102823654A CN201110282365A CN103022224A CN 103022224 A CN103022224 A CN 103022224A CN 2011102823654 A CN2011102823654 A CN 2011102823654A CN 201110282365 A CN201110282365 A CN 201110282365A CN 103022224 A CN103022224 A CN 103022224A
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Abstract
The invention relates to a high-efficiency dual-junction thin-film solar cell technology capable of improving tunneling effect, which is mainly suitable for the interface of the dual-junction thin-film solar cell, wherein the existing defects which are capable of improving the probability of hole electron compounding in a transparent oxide layer are utilized to effectively prevent carrier separation on the interface of the two junctions to form a reverse built-in electric field; therefore, excellent tunnel junction of the dual-junction thin-film solar cell can be obtained; if the second layer of thin-film solar cell is a crystalline structure, the defects of the interface are also advantageous for improving the quality of the thin-film deposition crystal, thereby greatly improving the efficacy of the thin-film solar cell.
Description
Technical field:
The present invention be a kind of be a kind of new technology that is used in the binode thin-film solar cells.Add processing procedure one in the junction of binode, form good tunneling effect, make binode thin-film solar cells efficient reach the addition effect, to increase solar cell power generation efficient.
Background technology
Because solar energy industry changes into double-junction solar battery by unijunction solar cell one after another in order effectively to promote solar battery efficiency now.And double-junction solar battery is when two batteries of series connection, its junction is played the part of considerable role, if produce without the good tunnel knot of wearing, two solar cell storehouses can't have to add together takes advantage of effect, so can produce the good tunnel of wearing in this junction ties, can greatly promote the efficient of solar cell, increase its industrial competitiveness.
Invention description:
The present invention mainly is the junction place that is applicable to the binode thin-film solar cells, utilize the inner existing defective of transparent oxide layer itself, and these defectives can improve the compound probability in electronics electricity hole, effectively stop the reverse internal electric field of carrier separation formation on the binode junction, the tunnel of wearing that obtains good binode thin-film solar cells is tied, if second layer thin-film solar cells is crystalline structure, the defective of this junction also helps to promote the quality of thin film deposition crystallization, greatly promotes the usefulness of thin-film solar cells.
Specific implementation method:
I is with the present invention's accompanying drawing of arranging in pairs or groups, be described in detail as follows: Fig. 1 is the processing procedure schematic diagram that the present invention improves the high efficiency binode thin film solar cell technologies of tunneling effect, by learning among the figure, prior to upper electrode (2) and the single-node thin-film solar cells (3) of successively being coated with of substrate (1), be coated with on the solar cell surface of finishing afterwards, be coated with again the layer of transparent oxide layer, form some extra defect layers (4) in this junction, be coated with again afterwards second layer thin-film solar cells (5) and electrode (6), namely finished the high-effect binode thin-film solar cells of well wearing the tunnel knot.
Fig. 2 is that the present invention improves within the high efficiency binode thin film solar cell technologies of tunneling effect and builds electric field intensity map, can be learnt by figure, first (3), it is the same building direction of an electric field (7) within two (5) layer film inside solar energy batteries form, but on the binode junction, because ground floor N-type thin layer (3-1) and the easy internal electric field that forms opposite direction of second layer P type thin layer (5-1), the transmission of carrier will be affected, add in this junction and to be coated with layer of transparent oxide layer (4) processing procedure, can effectively resist anti-lane internal electric field forms, simultaneously also because this layer is transparent thin film layer, can't affect light advances, effectively promote the efficient of binode thin-film solar cells, increase solar energy industry and advance to strive ability.
More than explanation is just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention.
Description of drawings: following for the present invention is further described by reference to the accompanying drawings: Fig. 1 is the processing procedure schematic diagram that the present invention improves the high efficiency binode thin film solar cell technologies of tunneling effect.Fig. 2 is that the present invention improves within the high efficiency binode thin film solar cell technologies of tunneling effect and builds electric field intensity map.
The main symbol description of icon:1 ... substrate 2 ... electrode 3 ... the P type thin layer 4 of ground floor thin-film solar cells 3-1. ground floor thin-film solar cells ... transparent oxide layer 5 ... the N-type thin layer 6 of second layer thin-film solar cells 5-1. second layer thin-film solar cells ... electrode 7 ... the internal electric field direction.
Claims (3)
1. the present invention mainly is the junction place that is applicable to the binode thin-film solar cells, utilize the inner existing defective of transparent oxide layer itself, and these defectives can improve the compound probability in electronics electricity hole, effectively stop the reverse internal electric field of carrier separation formation on the binode junction, the tunnel of wearing that obtains good binode thin-film solar cells is tied, if second layer thin-film solar cells is crystalline structure, the defective of this junction also helps to promote the quality of thin film deposition crystallization, greatly promotes the usefulness of thin-film solar cells.
2. a kind of high efficiency binode thin film solar cell technologies of improving tunneling effect of narrating according to claim 1, all be applicable to N-I-P (N-P) or P-I-N (P-N) type thin-film solar cells, as long as be double-junction solar battery, use this technology, all belong to the present invention's claim.
3. a kind of high efficiency binode thin film solar cell technologies of improving tunneling effect of narrating according to claim 1, be coated with the layer of transparent oxide layer in the binode junction, form some extra defect layers in this junction, effectively stop carrier to separate and form reverse internal electric field, also because this layer is transparent thin film layer, can't affects light and advance simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102823654A CN103022224A (en) | 2011-09-22 | 2011-09-22 | High-efficiency dual-junction thin-film solar cell technology capable of improving tunneling effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011102823654A CN103022224A (en) | 2011-09-22 | 2011-09-22 | High-efficiency dual-junction thin-film solar cell technology capable of improving tunneling effect |
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| CN103022224A true CN103022224A (en) | 2013-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011102823654A Pending CN103022224A (en) | 2011-09-22 | 2011-09-22 | High-efficiency dual-junction thin-film solar cell technology capable of improving tunneling effect |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851935A (en) * | 2006-03-23 | 2006-10-25 | 姜堰新金太阳能光伏制造有限公司 | Double-junction solar cell and manufacturing method thereof |
| CN101127370A (en) * | 2007-09-19 | 2008-02-20 | 中国科学院上海技术物理研究所 | Dual node flexible overlapping thin film solar battery for space |
| CN101866963A (en) * | 2009-07-20 | 2010-10-20 | 湖南共创光伏科技有限公司 | Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof |
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- 2011-09-22 CN CN2011102823654A patent/CN103022224A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851935A (en) * | 2006-03-23 | 2006-10-25 | 姜堰新金太阳能光伏制造有限公司 | Double-junction solar cell and manufacturing method thereof |
| CN101127370A (en) * | 2007-09-19 | 2008-02-20 | 中国科学院上海技术物理研究所 | Dual node flexible overlapping thin film solar battery for space |
| CN101866963A (en) * | 2009-07-20 | 2010-10-20 | 湖南共创光伏科技有限公司 | Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof |
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Application publication date: 20130403 |