CN103022026B - Multi-chip module and manufacture method thereof - Google Patents
Multi-chip module and manufacture method thereof Download PDFInfo
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- CN103022026B CN103022026B CN201110289833.0A CN201110289833A CN103022026B CN 103022026 B CN103022026 B CN 103022026B CN 201110289833 A CN201110289833 A CN 201110289833A CN 103022026 B CN103022026 B CN 103022026B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The present invention proposes a kind of multi-chip module and manufacture method thereof.Multi-chip module comprises: high voltage device chip, and it has at least one power switch; Low voltage control chip, it is coupled by plain conductor and high voltage device chip; One chip seat, in order to be fixed thereon high voltage device chip and low voltage control chip; And multiple pin, coupled by the extension of chip carrier or plain conductor and one chip seat.
Description
Technical field
The present invention relates to a kind of multi-chip module and manufacture method thereof, refer to a kind of multi-chip module and the manufacture method thereof that high voltage device chip and low voltage control chip are fixed on same chip seat especially.
Background technology
Fig. 1 shows a kind of typical power supply circuit, wherein, low voltage control chip 14 in multi-chip module 10, according to the feedback signal FB of flyback (flyback), and current sense signal CS, power switch in operate high pressure element chip 12, to be converted to output voltage Vout by input voltage vin.
Refer to Fig. 2 A, the arrangement of display multi-chip module 10 1 kinds of prior aries.As shown in the figure, multi-chip module 10 comprises high voltage device chip 12 and low voltage control chip 14.Wherein, high voltage device chip 12 is fixed on special chip carrier 11; And low voltage control chip 14 is fixed on another special chip carrier 13.Generally speaking, high voltage device is different from the processing procedure of low voltage component, and the cost manufactured respectively to be manufactured on same substrate low more simultaneously, and therefore creating high voltage device chip 12 respectively with low voltage control chip 14 is very general modes; In addition, if the element that high voltage device is rectilinear, then its substrate surface has current potential, and therefore, high voltage device chip 12 and low voltage control chip 14 should not be fixed on same chip seat simultaneously, in order to avoid influence each other, even cause short circuit, its embodiment, as shown in Figure 2 A, high voltage device chip 12 and low voltage control chip 14 are fixed on different chip carriers 11 and 13, and are packaged in same module.The advantage of this prior art is: integrating high-voltage element chip 12 and low voltage control chip 14 are within single encapsulation, and the interference effect avoiding chip signal mutual.
Fig. 2 B shows in Fig. 2 A, the profile of AA tangent line.As shown in the figure, the chip carrier 11 separated, with on chip carrier 13, fixes high voltage device chip 12 and low voltage control chip 14 respectively, and its chip chamber, utilize plain conductor 15 mutually to couple, to transmit signal.The shortcoming of this prior art is: chip is fixed on single exclusive chip carrier, and therefore the area of each chip carrier is little relative to the arrangement of shared chip carrier, and thus, the efficiency of its heat radiation is relatively poor.In addition; temperature sensor (not shown) in low voltage control chip 14 cannot sense the temperature of high voltage device chip 12 (or sensing accuracy is poor); to start overheat protector (overtemperatureprotection, OTP) when temperature is too high.Above-mentioned prior art is such as found in No. 2007/0200537th, U.S. patent application case.
Fig. 3 A-3C shows the prior art of another kind of multi-chip module 20 arrangement.Compared to aforementioned prior art, this prior art high voltage device and low voltage component is integrated in single (monolithic) chip 22.As shown in Figure 3A, one chip 22 is fixed thereon by chip carrier 21, and thus, chip carrier 21 is compared in aforesaid prior art, and the chip carrier 11 and 13 separated, the area of dissipation of this prior art is comparatively large, has preferably radiating effect.Fig. 3 B is respectively with the top view of sketch display one chip 22, and as shown in the figure, high voltage device 221 and low voltage component 222 are integrated in one chip 22.Fig. 3 C shows in Fig. 2 A, the profile of AA tangent line.But the shortcoming of this prior art is, high voltage device needs to manufacture on same substrate with low voltage component simultaneously, and its manufacturing cost is higher; In addition, high voltage device and low voltage component, on same substrate, easily produce the interactional noise problem of signal, the problems such as such as crosstalk (crosstalk).
In view of this, the present invention is namely for above-mentioned the deficiencies in the prior art, propose a kind of multi-chip module and the manufacture method thereof that high voltage device chip and low voltage control chip are fixed on same chip seat, chip cooling problem can be improved, and do not need to increase manufacturing cost.
Summary of the invention
One of the object of the invention is to overcome the deficiencies in the prior art and defect, proposes a kind of multi-chip module.
Another object of the present invention is, proposes a kind of multi-chip module manufacture method.
For reaching above-mentioned purpose, just wherein a viewpoint is sayed, the invention provides a kind of multi-chip module, comprise: a high voltage device chip, it has at least one power switch; One low voltage control chip, it is coupled by plain conductor and this high voltage device chip; One chip seat, in order to be fixed thereon this high voltage device chip and this low voltage control chip; And multiple pin, coupled by an extension of this chip carrier or plain conductor and this one chip seat.
Wherein in a kind of enforcement kenel, wherein this high voltage device chip should comprise: horizontal (lateral) metal oxide semiconductcor field effect transistor (metaloxidesemiconductorfieldeffecttransistor, a MOSFET) power switch; And the vague and general type starting switch of a transverse direction.
Described multi-chip module, wherein this high voltage device chip more can comprise a thermal diode in order to sensing temperature.
Implement in kenel at another kind, wherein this transverse direction vague and general type starting switch should have a horizontal vague and general type MOSFET or laterally vague and general type junction field effect transistor (junctionfieldeffecttransistor, JFET).
Implement in kenel at another kind, wherein this power switch has one first electric current inflow end, one first control end and one first outflow of bus current end, by the operation of this first control end, control a switching current and flow into this first electric current inflow end, and flow out from this first outflow of bus current end; This high voltage device chip more comprises a sampling transistor, and in order to sample this switching current, it comprises: one second electric current flows into end, is contained in this first electric current and flows into end; One second control end, is contained in this first control end; And one second outflow of bus current end, flow out isolated with this first outflow of bus current end, and produce one, with this switching current, there is the sampling current of a ratio.
With regard to another viewpoint, present invention provides a kind of multi-chip module manufacture method, comprise: provide a high voltage device chip, it has at least one power switch; By plain conductor, this high voltage device chip is coupled to a low voltage control chip; This high voltage device chip and this low voltage control chip are fixed on one chip seat; And by an extension of this chip carrier or plain conductor, this one chip seat is coupled to multiple pin.
Illustrate in detail below by specific embodiment, when the effect being easier to understand object of the present invention, technology contents, feature and reach.
Accompanying drawing explanation
Figure the 1st shows a kind of typical power supply circuit;
Fig. 2 A-2B shows the arrangement of multi-chip module 10 1 kinds of prior aries;
Fig. 3 A-3C shows the prior art of another kind of multi-chip module 20 arrangement;
Fig. 4 A-4B shows first embodiment of the invention;
Fig. 5 A-5C shows second embodiment of the invention.
Symbol description in figure
10,20,30,40 multi-chip modules
11,13,15,21,31 chip carriers
12,16,32,42 high voltage device chips
14,34,44 low voltage control chips
15,35 plain conductors
22 one chips
221 high voltage devices
222 low voltage components
37 pins
39 extensions
CS current sense signal
Drain drains
DriftRegion drift region
FB feedback signal
Gate grid
R resistance
S1 power switch
S2 sampling transistor
Source1, Source2 source electrode
Vin input voltage
Vout output voltage
Embodiment
Refer to Fig. 4 A and 4B, display first embodiment of the invention, in multi-chip module 30, comprise high voltage device chip 32, low voltage control chip 34, one chip seat 31 and multiple pin 37 with at least one power switch.As shown in Figure 4 A, low voltage control chip 34 its coupled by plain conductor 35 and high voltage device chip 32.Further, high voltage device chip 32 and low voltage control chip 34 are all fixed on one chip seat 31, the cutaway view of CC hatching line in Fig. 4 A as shown in Figure 4 B.In addition, multiple pin 37 is coupled with low voltage control chip 34 with the high voltage device chip 32 on one chip seat 31 by the extension 39 of chip carrier 31 or plain conductor 35.
For making high voltage device chip 32 and low voltage control chip 34 can be fixed on one chip seat 31, and for avoiding the substrate surface of rectilinear high voltage device as described in the prior art to have different current potentials from the substrate surface of low voltage control chip; The high voltage device chip 32 of the present embodiment can be, but not limited to comprise: lateral metal oxide semiconductor field-effect transistor (metaloxidesemiconductorfieldeffecttransistor, MOSFET) power switch; And/or horizontal vague and general type starting switch.Because horizontal high voltage device is different from rectilinear high voltage device, the substrate surface of its substrate surface and low voltage control chip has same potential (ground connection), therefore can be fixed on same chip seat 31.
Wherein, in high voltage device chip 32, can be, but not limited to comprise as thermal diode (thermaldiode), in order to sensing temperature, and then high voltage device can be controlled, to avoid chip overheating further.
In addition, above-mentioned transverse direction vague and general type starting switch is for example and without limitation to laterally vague and general type MOSFET or laterally vague and general type junction field effect transistor (junctionfieldeffecttransistor, JFET), and it is in order to operate in circuit start program.
Fig. 5 A-5C shows second embodiment of the invention.As shown in Figure 5A, high voltage device chip 42 and low voltage control chip 44 is comprised in multi-chip module 40.In the present embodiment, high voltage device chip 42 such as comprises power switch S1 and sampling transistor S2, and sampling transistor S2 is in order to the electric current of sense power switch S 1.The electric current of sampling transistor S2 flows into the electric current inflow end that end is coupled to power switch S1.The control end of sampling transistor S2 and the control end of power switch S1, be all coupled to the control pin Gate of low voltage control chip 44.The outflow of bus current end of sampling transistor S2 and one end of resistance R couple, and the other end of resistance R is then coupled to ground.(when NMOS, electric current flows into and holds is drain electrode, control end is grid, outflow of bus current end is source electrode; Be then corresponding terminal when PMOS or bipolar junction transistors, this knows known by the knowledgeable for having in constructed field usually.) by this kind of sampling mode, the power loss of sense power switching current can be reduced, and raising efficiency, improve the accuracy of sampling.In addition; please refer to Fig. 5 B, show by sampling transistor S2 sense power switch S 1 electric current, to reach overcurrent protection (overcurrentprotection; OCP) mechanism, can omit the current sense CS pin of low voltage control chip 44 further.As shown in Figure 5 B, sampling transistor S2 source electrode is coupled to a comparator circuit, compares with a set point; and produce overcurrent protection signal OCP, over current protection protection mechanism can be reached, and then omit the current sense CS pin of low voltage control chip 44; to improve conformability, and reduce manufacturing cost.
Fig. 5 C shows the top view of sampling transistor S2 and power switch S1.As shown in Figure 5 C, power switch S1 comprises drain D rain, drift region, grid G ate and source S ource1.In the way of reality, can be considered source S ource1 is partitioned into a bit of using the source S ource2 as sampling transistor S2, and drain D rain, drift region, then share with power switch S1 with grid G ate, that is, the drain D rain of power switch S1 (electric current flows into end) and grid G ate (control end) also respectively as or comprise drain D rain (electric current flows into and holds) and the grid G ate (control end) of sampling transistor S2, and the source S ource2 of sampling transistor S2 (outflow of bus current end) and the source S ource1 (outflow of bus current end) of power switch S1 completely cut off, but sampling transistor S2 and power switch S1 is integrated into single element, to save element area and to simplify element production process.So; can according to the dimension scale of source S ource2 and source S ource1; with the source S ource2 voltage sensed or current signal, the switching current of power switch S1 can be derived, using as current sense signal CS or directly in order to carry out over current protection protection mechanism.
Below for preferred embodiment, the present invention is described, just the above, be only and make those skilled in the art be easy to understand content of the present invention, be not used for limiting interest field of the present invention.Under same spirit of the present invention, those skilled in the art can think and various equivalence change.Such as, power switch S1 can be PMOS or nmos pass transistor; In shown each embodiment circuit, the element not affecting signal major significance can be inserted, as other switch etc.; The input of such as comparator or error amplifier is positive and negative again can exchange, and only needs the signal processing mode of corresponding correction circuit; Such as multi-chip module of the present invention can be applied to various power supply circuit again, and such as power factor correcting (PFC) circuit, flyback power factor correction circuit or half-bridge circuit etc., be not limited to flyback circuit as shown in the FIG..All this kind, all teaching according to the present invention can analogize and obtain, and therefore, scope of the present invention should contain above-mentioned and other all equivalence change.
Claims (10)
1. a multi-chip module, is characterized in that, comprises:
One high voltage device chip, it has at least one power switch;
One low voltage control chip, it is coupled by plain conductor and this high voltage device chip;
One chip seat, in order to be fixed thereon this high voltage device chip and this low voltage control chip; And
Multiple pin, is coupled by an extension of this chip carrier or plain conductor and this one chip seat;
Wherein, this high voltage device chip comprises a horizontal high voltage device, and does not comprise rectilinear high voltage device, and this horizontal high voltage device has a first substrate surface, this low voltage control chip has a second substrate surface, and this first substrate surface and this second substrate surface are in order to be electrically connected to earthing potential;
Wherein, described high pressure is higher than described low pressure.
2. multi-chip module as claimed in claim 1, wherein, this high voltage device chip comprises:
One lateral metal oxide semiconductor field-effect transistor power switch; And
One horizontal vague and general type starting switch.
3. multi-chip module as claimed in claim 2, wherein, this high voltage device chip also comprises a thermal diode in order to sensing temperature.
4. multi-chip module as claimed in claim 2, wherein, this transverse direction vague and general type starting switch has a horizontal vague and general type MOSFET or laterally vague and general type junction field effect transistor.
5. multi-chip module as claimed in claim 1, wherein, this power switch has one first electric current and flows into end, one first control end and one first outflow of bus current end, by the operation of this first control end, control a switching current and flow into this first electric current inflow end, and flow out from this first outflow of bus current end; This high voltage device chip also comprises a sampling transistor, and in order to sample this switching current, it comprises:
This first electric current flows into end;
This first control end; And
One second outflow of bus current end, flows out isolated with this first outflow of bus current end, and produces one and have the sampling current of a ratio with this switching current, and wherein this sampling transistor and power switch are integrated into single element.
6. a multi-chip module manufacture method, is characterized in that, comprises:
There is provided a high voltage device chip, it has at least one power switch;
By plain conductor, this high voltage device chip is coupled to a low voltage control chip;
This high voltage device chip and this low voltage control chip are fixed on one chip seat; And
By an extension of this chip carrier or plain conductor, this one chip seat is coupled to multiple pin;
Wherein, this high voltage device chip comprises a horizontal high voltage device, and does not comprise rectilinear high voltage device, and this horizontal high voltage device has a first substrate surface, this low voltage control chip has a second substrate surface, and this first substrate surface and this second substrate surface are in order to be electrically connected to earthing potential;
Wherein, described high pressure is higher than described low pressure.
7. multi-chip module manufacture method as claimed in claim 6, wherein, this high voltage device chip comprises:
One lateral metal oxide semiconductor field-effect transistor power switch; And
One horizontal vague and general type starting switch.
8. multi-chip module manufacture method as claimed in claim 7, wherein, this high voltage device chip also comprises a thermal diode in order to sensing temperature.
9. multi-chip module manufacture method as claimed in claim 7, wherein, this transverse direction vague and general type starting switch has a horizontal vague and general type MOSFET or laterally vague and general type junction field effect transistor.
10. multi-chip module manufacture method as claimed in claim 6, wherein, this power switch has one first electric current and flows into end, one first control end and one first outflow of bus current end, by the operation of this first control end, control a switching current and flow into this first electric current inflow end, and flow out from this first outflow of bus current end; This high voltage device chip also comprises a sampling transistor, and in order to sample this switching current, it comprises:
This first electric current flows into end;
This first control end; And
One second outflow of bus current end, flows out isolated with this first outflow of bus current end, and produces one and have the sampling current of a ratio with this switching current, and wherein this sampling transistor and power switch are integrated into single element.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110289833.0A CN103022026B (en) | 2011-09-20 | 2011-09-20 | Multi-chip module and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110289833.0A CN103022026B (en) | 2011-09-20 | 2011-09-20 | Multi-chip module and manufacture method thereof |
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| CN103022026A CN103022026A (en) | 2013-04-03 |
| CN103022026B true CN103022026B (en) | 2015-11-25 |
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| CN104332465B (en) * | 2014-09-03 | 2017-05-17 | 江阴芯智联电子科技有限公司 | 3D packaging structure and technological method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101359661A (en) * | 2007-07-31 | 2009-02-04 | 万国半导体股份有限公司 | Multi-die dc-dc boost power converter with efficient packaging |
| CN101378053A (en) * | 2007-08-31 | 2009-03-04 | 万国半导体股份有限公司 | High and low voltage side N channel metal oxide semiconductor field effect transistor combined package |
| CN101594048A (en) * | 2009-03-19 | 2009-12-02 | 深圳市联德合微电子有限公司 | A kind of PWM type buck converter with overcurrent protection function |
| CN102184920A (en) * | 2009-11-24 | 2011-09-14 | 英特赛尔美国股份有限公司 | Voltage converter and systems including same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101682261B (en) * | 2007-05-22 | 2013-03-20 | 松下电器产业株式会社 | Switching power supply device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101359661A (en) * | 2007-07-31 | 2009-02-04 | 万国半导体股份有限公司 | Multi-die dc-dc boost power converter with efficient packaging |
| CN101378053A (en) * | 2007-08-31 | 2009-03-04 | 万国半导体股份有限公司 | High and low voltage side N channel metal oxide semiconductor field effect transistor combined package |
| CN101594048A (en) * | 2009-03-19 | 2009-12-02 | 深圳市联德合微电子有限公司 | A kind of PWM type buck converter with overcurrent protection function |
| CN102184920A (en) * | 2009-11-24 | 2011-09-14 | 英特赛尔美国股份有限公司 | Voltage converter and systems including same |
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| CN103022026A (en) | 2013-04-03 |
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